KR100869311B1 - Nano imprint lithography - Google Patents
Nano imprint lithographyInfo
- Publication number
- KR100869311B1 KR100869311B1 KR1020070061521A KR20070061521A KR100869311B1 KR 100869311 B1 KR100869311 B1 KR 100869311B1 KR 1020070061521 A KR1020070061521 A KR 1020070061521A KR 20070061521 A KR20070061521 A KR 20070061521A KR 100869311 B1 KR100869311 B1 KR 100869311B1
- Authority
- KR
- South Korea
- Prior art keywords
- pbma
- imprint
- resist
- stamp
- substrate
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
Description
The present invention relates to nanoimprint lithography processes. In particular, the present invention relates to a nanoimprint lithography process that can significantly lower the imprint temperature by using a thermoplastic polymer having a very low glass transition temperature as an imprint resist.
Recently, as the demand for nanodevices increases, the importance of lithography techniques that can define nanoscale patterns is also increasing.
On the other hand, optical lithography technology, which has been the mainstay of lithography, has been very difficult to define a pattern having a minimum line width of about 100 nm or less due to the limitation of resolution due to diffraction of light.
In order to overcome the limitations of optical lithography and to form higher resolution patterns, various types of lithography such as deep ultra violet (DUV) lithography, extreme ultra violet (EUV) lithography, laser interference lithography, electron beam lithography, X-ray lithography, etc. Has been proposed.
However, the above-described lithography method faces various problems such as high cost of the lithography system itself, difficulty in making a mask, low productivity, and difficulty in large-area application.
In this situation, what is emerging is nanoimprint lithography.
Nano Imprint Lithography, first proposed by Professor Chou of Princeton University in 1995, is a nanoscale structure that employs embossing / molding technology for mass production of various polymer materials with microscale patterns. By imprinting a stamp or mold having a polymer thin film to transfer the structure of the nano-scale and repeatedly used to overcome the productivity problem.
1 illustrates a conventional nanoimprint lithography process.
First, a resist layer 2 of PMMA (polymethylmethacrylate) material is formed on a substrate 1 such as silicon by using spin coating or dispensing coating. Thereafter, the stamp 3 made of silicon oxide or the like produced in advance is aligned with the substrate 1 (see Fig. 1A). The stamp 3 is formed with a nanoscale pattern 4.
Subsequently, when the substrate 1 and the stamp 3 are pressed together, the pattern 4 formed on the stamp 3 is imprinted on the resist layer 2 (see FIG. 1B).
At this time, in order to form the nano-pattern uniformly, the resist layer 2 should be heated to 200 ° C. or higher, and a pressure of 50 atm or higher should be applied to the stamp 3. This is basically because the glass transition temperature of PMMA is as high as 140-180 ° C.
Next, after lowering the temperature of the board | substrate 1 and the stamp 3 below the glass transition temperature of PMMA, the stamp 3 is isolate | separated from the resist layer 2 (refer FIG. 1 (c)).
Finally, an anisotropic etching process is used to remove the pressed portion, ie, the residual layer 5, from the resist surface. Thereby, the pattern 6 of predetermined nanoscale is formed in the resist layer 2 of the board | substrate 1 (refer FIG. 1 (d)).
Such a conventional nanoimprint lithography process has a problem that the nanoimprint system is complicated because an imprint is performed under high temperature and high pressure, and therefore, an expensive system is required.
In addition, under high pressure, the embossed portion of the stamp made of silicon oxide may be deformed or damaged during contact with the PMMA, so that the stamp needs to be frequently replaced.
In addition, under high temperature, there is a problem in that misalignment occurs due to a difference in coefficients of thermal expansion of the substrate and the stamp for PMMA.
Accordingly, an object of the present invention is to provide a nanoimprint lithography method capable of significantly lowering an imprint temperature by using a thermoplastic polymer having a very low glass transition temperature as an imprint resist. It is done.
In order to achieve the above object, the nanoimprint lithography method according to the present invention is characterized by using a material selected from the group consisting of a thermoplastic polymer having a glass transition temperature of 5 to 60 ℃ as a resist.
The thermoplastic polymer is a polymer of polyacryl [poly (acrylics)] or polymethacryl [poly (methacrylics)] series, a polymer of polyacrylic acid [poly (acrylic acid)] or polymethacrylic acid [poly (methacrylic acid)] series It may be one kind of polymer selected from the group consisting of.
The group consisting of the polymer of poly (acrylics) or polymethacryl [poly (methacrylics)] may include PBA [poly (benzyl acrylate)] and PCHA [poly (cyclohexyl acrylate)].
The group consisting of a polymer of poly (acrylic acid) or polymethacrylic acid (poly (methacrylic acid)] series may include PBMA [poly (benzyl methacrylate)] and PDDMA [poly (dodecanidiol dimethacrylate)]. have.
In addition, in order to achieve the above object, the nanoimprint lithography method according to the present invention is applied to the substrate a resist layer formed of a material selected from the group consisting of a thermoplastic polymer having a glass transition temperature of 5 to 60 ℃. And imprinting the pattern on the resist layer using a stamp having a predetermined pattern.
The material of the resist layer may be poly benzyl methacrylate (PBMA).
The resist layer may be formed by spin coating or dispensing coating of a resist solution prepared by adding about 3 to 10 wt% of the PBMA to toluene.
In the imprint step, the imprint temperature may be about 100 ° C. or less.
Hereinafter, the configuration of the present invention will be described in detail with reference to the accompanying drawings.
2 illustrates a nano imprint lithography process according to one embodiment of the invention.
FIG. 2 (a) is a diagram illustrating a step of preparing a substrate 11 and a stamp 13 for nanoimprint lithography.
First, in order to enable a low temperature imprint process on a substrate 11 such as silicon, a resist layer 12 of a material having a glass transition temperature lower than that of PMMA is formed.
As such, the nanoimprint lithography according to the present invention is characterized by using a thermoplastic polymer having a glass transition temperature lower than that of conventional PMMA as a resist. In particular, the present invention is characterized by using as a resist one material selected from the group consisting of thermoplastic polymers having a glass transition temperature of 5 to 60 ° C.
The thermoplastic polymer used as a resist in the present invention is preferably selected from the group consisting of polyacryl or polymethacrylic polymers, polyacrylic acid or polymethacrylic polymers.
In this case, the group consisting of polyacryl or polymethacryl-based polymers include PBA and PCHA.
In addition, the group consisting of polyacrylic acid or polymethacrylic acid-based polymer includes PBMA and PDDMA.
It is preferable to use a spin coating method or a dispensing coating method as a method of forming a resist layer.
The resist liquid used for spin coating or the like is prepared by dissolving the resist in a predetermined solvent. For example, when the resist is PBMA, PBMA is dissolved in a toluene solvent to form a PBMA solution, and the PBMA layer 12 is formed by rapidly rotating the substrate while dropping it onto the substrate. At this time, it is preferable to add about 3 to 10wt% of PBMA to toluene to make PBMA liquid.
As described above, after the substrate is prepared, the stamp 13 made of silicon oxide or the like prepared in advance is aligned with the substrate 11. The stamp 13 has a predetermined nanoscale pattern 14 for imprint. Since the manufacture of the stamp may be in accordance with a conventional method, a detailed description thereof will be omitted.
Thereafter, when a predetermined pressure (for example, 50 atm) is applied to the stamp 13 arranged on the substrate 11, the nanoscale pattern 14 formed on the stamp 13 is applied to the resist layer 12. Imprint (see FIG. 2 (b)).
At this time, pressure is applied while the resist layer 12 is heated above the glass transition temperature so that a nanoscale pattern is uniformly formed on the resist layer 12. In particular, in the present invention, since a resist having a glass transition temperature of 50 ° C. or less is used like PBMA, the actual imprint can be performed at 100 ° C. or less.
Next, after the temperature of the board | substrate 11 and the stamp 13 is lowered below the glass transition temperature of PBMA, the stamp 13 is isolate | separated from the resist layer 12 (refer FIG.2 (c)).
Finally, the remaining layer 15, which is a pressed part of the resist surface, is removed. The remaining layer is preferably removed using a reactive ion etching method capable of anisotropic etching. As a result, a predetermined nanoscale pattern 16 is formed on the resist layer 12 of the substrate 11 (see FIG. 2 (d)).
In conclusion, nanoimprint lithography according to the present invention has the following advantages over the conventional method using PMMA by using a thermoplastic polymer having a low glass transition temperature such as PBMA as a resist.
First, the low temperature process allows the lithography process itself to be simplified, thus simplifying the nanoimprint lithography system. In addition, the deformation and damage of the stamp can be reduced so that the stamp does not need to be replaced frequently.
Second, since the low temperature process is possible, the misalignment between the substrate and the stamp due to the difference in thermal expansion coefficient can be solved.
Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and various modifications made by those skilled in the art without departing from the spirit of the present invention. Modifications and variations are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.
The nanoimprint lithography method according to the present invention has the following effects by significantly lowering the imprint temperature to 100 ° C. or less by using a resist having a low glass transition temperature such as PBMA.
First, the lithography process itself is simpler than the prior art, and thus the nanoimprint lithography system is simplified, resulting in lower overall process costs. In addition, since the deformation and damage of the stamp can be reduced so that the stamp does not need to be replaced frequently, the replacement cost of the stamp is low.
In addition, it is possible to prevent the phenomenon that the alignment of the substrate and the stamp becomes difficult due to the difference in thermal expansion coefficients of the substrate and the stamp with respect to the PMMA.
In addition, even when using a polymer substrate and a polymer stamp, such as a polymer compared to the prior art can reduce the thermal damage.
1A-1D illustrate a conventional nanoimprint lithography process.
2A-2D illustrate nanoimprint lithography processes according to one embodiment of the invention.
<Description of the symbols for the main parts of the drawings>
11: substrate 12: resist layer
13: stamp 14, 15: nanoscale pattern
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070061521A KR100869311B1 (en) | 2007-06-22 | 2007-06-22 | Nano imprint lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070061521A KR100869311B1 (en) | 2007-06-22 | 2007-06-22 | Nano imprint lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100869311B1 true KR100869311B1 (en) | 2008-11-18 |
Family
ID=40284429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070061521A KR100869311B1 (en) | 2007-06-22 | 2007-06-22 | Nano imprint lithography |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100869311B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101009340B1 (en) | 2009-06-09 | 2011-01-19 | 한국기계연구원 | Method for fabricating nanoparticle layer and Method for preparing nano imprinting stamp using the same |
-
2007
- 2007-06-22 KR KR1020070061521A patent/KR100869311B1/en not_active IP Right Cessation
Non-Patent Citations (2)
| Title |
|---|
| Issues on nanoimprint lithography with a single-layer resist structure(Applied Physics A:Material Science & Processing 81, 1331-1335 (2005), Published online: 4. August 2005 ) |
| Nanoimprint lithography(Journal of Vacuum Science Technology B 14(6), Nov/Dec 1996) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101009340B1 (en) | 2009-06-09 | 2011-01-19 | 한국기계연구원 | Method for fabricating nanoparticle layer and Method for preparing nano imprinting stamp using the same |
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