KR100863071B1 - Multy exposure titling device with 405nm laser diode - Google Patents

Multy exposure titling device with 405nm laser diode Download PDF

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Publication number
KR100863071B1
KR100863071B1 KR1020070042350A KR20070042350A KR100863071B1 KR 100863071 B1 KR100863071 B1 KR 100863071B1 KR 1020070042350 A KR1020070042350 A KR 1020070042350A KR 20070042350 A KR20070042350 A KR 20070042350A KR 100863071 B1 KR100863071 B1 KR 100863071B1
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South Korea
Prior art keywords
light
unit
light source
scanner
laser diode
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KR1020070042350A
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Korean (ko)
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민성욱
김창현
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(주)하드램
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A multi-exposure system using 405 nanometer laser diodes is provided to enable marking of specific patterns with different content simultaneously at each coordinate over a broad range of a work piece, thereby improving the work efficiency and convenience. A multi-exposure system using 405 nanometer laser diodes comprises: a plurality of light sources(110) generating light by using 405 nm laser diodes; a plurality of scanners(30) modifying the light generated from the light sources to reflect the light along a predetermined path; a projection unit(40) for scanning the light reflected by the scanners to a stage section; and a control section for adjusting the light sources, scanners and stage section and controlling the traces of the light to form a desired pattern according to electrical signals transmitted from a pattern information section(70). The multi-exposure system further comprises a beam shaper(200) and a beam expander(300) on the path of the light sources and the scanners.

Description

405나노미터 레이저다이오드를 이용한 멀티노광장치 {Multy exposure titling device with 405nm laser diode}Multi-exposure device using 405nm laser diode {Multy exposure titling device with 405nm laser diode}

도 1은 종래기술에 의한 노광장치의 구성도,1 is a block diagram of an exposure apparatus according to the prior art,

도 2는 본 발명에 의한 405nm 레이저다이오드를 이용한 멀티노광장치의 2 shows a multi-exposure apparatus using a 405 nm laser diode according to the present invention.

구성도,Diagram,

도 3은 본 발명에 의한 405nm 레이저다이오드를 이용한 멀티노광장치의 3 shows a multi-exposure apparatus using a 405 nm laser diode according to the present invention.

사시도,Perspective,

도 4는 본 발명에 의한 405nm 레이저다이오드를 이용한 멀티노광장치의 4 shows a multi-exposure apparatus using a 405 nm laser diode according to the present invention.

광원부의 상세도.Detailed view of the light source part.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 스테이지부 30 : 스캐너부10: stage portion 30: scanner portion

40 : 투광부 60 : 제어부40: light transmitting unit 60: control unit

70 : 패턴정보부 100 : 광원부70 pattern information unit 100 light source unit

110 : 광원 120 : 콜리메이팅렌즈110: light source 120: collimating lens

200 : 빔쉐이퍼 300 : 빔익스펜더 200: beam shaper 300: beam expander

본 발명은 405nm 레이저다이오드를 사용한 멀티노광장치에 관한 것으로, 복수개의 405nm 레이저다이오드를 광원으로 이용하고 상기 광원에 대응하는 복수개의 스캐너부 및 투광부로 광 경로를 조정하여 가공물의 광범위한 영역에 걸쳐 특정 패턴 마킹을 가능하게 하여 노광 작업의 편의성과 효율성을 향상시키는 발명이다.The present invention relates to a multi-exposure apparatus using a 405 nm laser diode, wherein a plurality of 405 nm laser diodes are used as a light source, and the light path is adjusted to a plurality of scanner parts and light transmitting parts corresponding to the light source, so that a specific pattern is spread over a wide range of workpieces. The invention enables the marking to improve the convenience and efficiency of the exposure operation.

일반적으로 기판에 패턴을 형성하는 노광장치는 플라즈마 표시패널(PDP), S/M(Shadow Mask), 인쇄회로기판(PCB), C/F(Color Filter), 액정표시장치(LCD), 반도체 등을 제조하는 공정에서 사용되는 것으로서, 마스크와 광학계, 조정용 스테이지 및 자외선을 이용하여 구성되고, 패턴공정의 경우 패턴을 형성하려는 막 위에 포토레지스트막을 마련 후, 소정의 마스크 패턴을 포토레지스트막에 대응되게 위치시키고, UV 램프 등을 이용하여 상기 포토레지스트막을 마스크 패턴에 따라 노광시켜 포토레지스트막의 노광된 부분을 현상하여 제거한 후, 현상에 의해 제거된 포토레지스트막 패턴을 통해 노출된 막을 에칭 공정에 의해서 제거하고 포토레지스트막 패턴을 제거하여 유리기판상의 막에 원하는 패턴이 형성하는 포토 리소그라피(Photo Lithography) 방법을 사용하여 왔다.In general, an exposure apparatus that forms a pattern on a substrate includes a plasma display panel (PDP), a shadow mask (S / M), a printed circuit board (PCB), a color filter (C / F), a liquid crystal display (LCD), a semiconductor, and the like. It is used in the process of manufacturing a, comprising a mask and an optical system, the adjusting stage and the ultraviolet ray, in the case of the pattern process to form a photoresist film on the film to form a pattern, the predetermined mask pattern to correspond to the photoresist film Position and expose the photoresist film according to a mask pattern by using a UV lamp or the like to develop and remove the exposed portion of the photoresist film, and then remove the film exposed through the photoresist film pattern removed by development by an etching process. And photolithography, which removes the photoresist film pattern and forms a desired pattern on the film on the glass substrate. .

그러나 상기와 같이 포토 리소그라피(Photo Lithography) 방법에 의한 글라 스 위의 막을 패터닝하는 경우, 그 공정이 까다롭고 복잡하며 장치 설비에 비용이 많이 들며 제조시간과 비용이 증가하는 등의 문제점이 있었고 이러한 문제점을 해결하기 위해 레이저를 막에 직접적으로 조사하여 원하는 패턴을 형성하는 다이렉트 패너팅 기법이 도입될 필요가 있었고, 근래 스캐너를 사용하여 ITO막이나 칼라 필터의 블랙 매트릭스에 직접적으로 원하는 패턴을 형성하는 노광장치가 사용되어지고 있다.However, in the case of patterning the film on the glass by the photo lithography method as described above, the process is difficult, complicated, expensive to the equipment equipment, manufacturing time and cost increases, and such problems In order to solve the problem, a direct panning technique that directly irradiates a film with a laser to form a desired pattern needs to be introduced, and recently, an exposure that forms a desired pattern directly on an ITO film or a black matrix of a color filter using a scanner The device is being used.

이하 첨부한 도면에 의하여 종래기술에 의한 노광장치를 설명한다.Hereinafter, an exposure apparatus according to the related art will be described with reference to the accompanying drawings.

도 1은 종래기술에 의한 노광장치의 구성도이다. 상기 도면에서 도시하는 바와 같이 종래기술에 의한 노광장치는 광을 발생하는 광원부(50)와, 상기 광원부(50)에서 발생하는 광을 수광하여 소정경로로 반사하는 폴리곤스캐너(20)와 상기 폴리곤스캐너(20)에서 반사된 광을 스테이지부(10)에 주사시키는 투광부(40)와 패턴정보부(70)에서 전송받은 전기적 신호에 의해 원하는 패턴을 형성하도록 상기 광원부(50), 폴리곤스캐너(20) 및 스테이지부(10)를 조정하여 광의 궤적을 조절하는 제어부(60)로 구성된다.1 is a configuration diagram of an exposure apparatus according to the prior art. As shown in the drawing, the exposure apparatus according to the prior art includes a light source unit 50 for generating light, a polygon scanner 20 for receiving light reflected from the light source unit 50, and reflecting the light in a predetermined path. The light source unit 50 and the polygon scanner 20 to form a desired pattern by an electric signal transmitted from the light transmitting unit 40 and the pattern information unit 70 for scanning the light reflected by the stage unit 10 to the stage unit 10. And a controller 60 that adjusts the trajectory of the light by adjusting the stage unit 10.

상기 발명의 경우 폴리곤스캐너(20)의 반사면에서 반사된 광의 경로를 인식하여 동기신호를 발생하는 광로인식부(41, 42)를 도입함으로써, 상기 동기 신호에 기반하여 제어부(60)가 광원의 점멸, 스테이지의 이동 등을 제어함으로써 작업물에 원하는 정밀한 패턴을 형성시킬 수가 있었다.
미설명 도면부호 31은 폴리곤 스캐너의 반사 빔을 안내하기 위한 광학계이며, 도면부호 32는 폴리곤 스캐너의 반사 빔을 가공 면으로 가이드하는 광학계이며, 도면부호 51은 광원의 발산각을 조절하여 평행광으로 만드는 광학계이며, 도면부호 52는 광원의 빔모드(energy profile)를 가공에 알맞게 변경시키는 광학계이며, 도면부호 61은 광원을 가공 데이터와 동기하여 온/오프를 제어하는 제어부이며, 도면부호 62는 폴리곤 스캐너를 구동시키는 폴리곤 스캐너 제어부이며, 도면부호 63은 스테이지를 제어하는 스테이지 제어부이다.In the case of the present invention, by introducing the optical path recognition unit (41, 42) for generating a synchronization signal by recognizing the path of the light reflected from the reflection surface of the polygon scanner 20, the control unit 60 is based on the synchronization signal By controlling the blinking, the movement of the stage, and the like, a desired precise pattern could be formed on the workpiece.
Reference numeral 31 is an optical system for guiding the reflected beam of the polygon scanner, 32 is an optical system for guiding the reflected beam of the polygon scanner to the processing surface, reference numeral 51 is a parallel light by adjusting the divergence angle of the light source Reference numeral 52 is an optical system for changing the beam mode (energy profile) of the light source to suit the processing, reference numeral 61 is a control unit for controlling the on / off of the light source in synchronization with the processing data, reference numeral 62 is a polygon It is a polygon scanner control part which drives a scanner, and 63 is a stage control part which controls a stage.

다만 전술한 장점에도 불구하고 종래 노광장치의 경우, 광원으로 주로 고가의 펄스 레이저광원을 사용했는데, 그 구조 및 비용의 특성상 단일의 광원을 사용하여 작업영역에 한계가 있었고, 멀티헤드 시스템을 적용한 경우에도 특정 패턴의 마킹을 위해서는 AO 모듈레이터(acoustic optical modulator)를 사용하여 그 구성과 제어방식이 복잡하고 경제성이 떨어지는 문제점이 있었다.However, despite the above-mentioned advantages, the conventional exposure apparatus mainly used an expensive pulse laser light source as a light source, but due to its structure and cost, there was a limit in the work area using a single light source, and a multihead system was applied. In order to mark a specific pattern, an AO modulator (acoustic optical modulator) was used, and its configuration and control method were complicated and inexpensive.

본 발명은 상기와 같은 문제점을 해결하기 위한 것으로, 복수개의 405nm 레이저다이오드를 광원으로 이용하고, 상기 광원에서 출사된 광을 복수개의 스캐너부 및 투광부를 통하여 작업물의 광범위한 영역에 걸쳐 각각의 좌표에서 동시에 상이한 내용의 특정패턴의 마킹을 가능하게 함으로써 작업효율을 향상시켜 제품의 작업성과 편의성을 증진시키는 405nm 레이저다이오드를 이용한 노광장치를 제공하는 것을 그 목적으로 한다.The present invention is to solve the above problems, using a plurality of 405nm laser diode as a light source, and the light emitted from the light source through the plurality of scanner and the projection unit at the same time in each coordinate over a wide range of workpieces It is an object of the present invention to provide an exposure apparatus using a 405 nm laser diode which improves the work efficiency by enabling the marking of specific patterns of different contents, thereby improving the workability and convenience of the product.

상기 문제점을 해결하기 위하여 본 발명은, 광을 발생하는 다수의 광원부와, 상기 광원부에서 발생하는 광을 수광하여 소정경로로 반사하는 상기 광원부에 대응하는 다수의 스캐너부와 상기 스캐너부에서 반사된 광을 스테이지부에 주사시키는 투광부와 패턴정보부에서 전송받은 전기적 신호에 의해 원하는 패턴을 형성하도록 상기 광원부, 스캐너부 및 스테이지부를 조정하여 광의 궤적을 조절하는 제어부로 형성된 노광장치에 있어서, 상기 광원부는 405nm 레이저다이오드로 형성된 광원을 이용하여 광을 발생하는 것을 특징으로 한다.In order to solve the above problems, the present invention provides a plurality of light source units for generating light, a plurality of scanner units corresponding to the light source units for receiving light reflected from the light source unit and reflecting the light in a predetermined path, and the light reflected from the scanner unit. An exposure apparatus formed of a light control unit for adjusting a light trajectory by adjusting the light source unit, the scanner unit, and the stage unit to form a desired pattern by a light transmitting unit for scanning the unit to a stage and an electrical signal transmitted from the pattern information unit, the light source unit 405nm Light is generated using a light source formed of a laser diode.

이하 첨부한 도면에 따라 본 발명의 구성을 설명한다.Hereinafter, the configuration of the present invention according to the accompanying drawings.

도 2는 본 발명에 의한 405nm 레이저다이오드를 이용한 멀티노광장치의 구성도이고, 도 3은 본 발명에 의한 405nm 레이저다이오드를 이용한 멀티노광장치의 사시도이며, 도 4는 본 발명에 의한 405nm 레이저다이오드를 이용한 멀티노광장치의 광원부의 상세도이다.Figure 2 is a block diagram of a multi-exposure apparatus using a 405nm laser diode according to the present invention, Figure 3 is a perspective view of a multi-exposure apparatus using a 405nm laser diode according to the present invention, Figure 4 is a 405nm laser diode according to the present invention It is a detail view of the light source part of the used multi exposure apparatus.

도 2 내지 도 4를 참조하면, 본 발명은 광을 발생하는 다수의 광원부(100)와, 상기 광원부(100)에서 발생하는 광을 수광하여 소정경로로 반사하는 상기 광원부(100)에 대응하는 다수의 스캐너부(30)와, 상기 스캐너부(30)에서 반사된 광을 스테이지부(10)에 주사시키는 투광부(40)와, 패턴정보부(70)에서 전송받은 전기적 신호에 의해 원하는 패턴을 형성하도록 상기 광원부(100), 스캐너부(30) 및 스테이지부(10)를 조정하여 광의 궤적을 조절하는 제어부(60)로 형성된 노광장치에 있어서, 상기 광원부(100)는 405nm 레이저다이오드로 형성된 광원(110)을 이용하여 광을 발생하는 것을 특징으로 한다.2 to 4, the present invention provides a plurality of light source units 100 for generating light and a plurality of light source units 100 for receiving light reflected from the light source unit 100 and reflecting the light in a predetermined path. A desired pattern is formed by the scanner unit 30, the light transmitting unit 40 for scanning the light reflected by the scanner unit 30 to the stage unit 10, and an electrical signal transmitted from the pattern information unit 70. In the exposure apparatus formed of the control unit 60 for adjusting the light trajectory by adjusting the light source unit 100, the scanner unit 30 and the stage unit 10 so that the light source unit 100 is a light source formed of a 405nm laser diode ( 110 to generate light.

상기 광원부(100)는 작업물의 작업영역, 또는 패턴형태에 따라 적절한 개수로 사용하되, 레이저 광을 주사하는 광원(110)은 405nm 레이저다이오드를 사용하여 실시함이 타당하다. 상기 광원(110)은 반도체 소자로, 온도상승시 광출력이 감소하여 광원(110)의 온도상승을 방지하는 열전 냉각 콘트롤러(TEC; thermoelectric cooling controller) 타입의 쿨러(130)를 장착함과 동시에, 온도변화에 따른 레이저 출력의 변동과 구동전류를 지속적으로 감시하여 고효율의 레이저 출력이 유지되도록 제어하는 광원 드라이버(161)를 제어부(60)에 장착하여 실시함이 타당하다.The light source unit 100 may be used in an appropriate number depending on the work area of the work piece or the pattern shape, and the light source 110 for scanning the laser light may be implemented using a 405 nm laser diode. The light source 110 is a semiconductor device, and at the same time equipped with a thermoelectric cooling controller (TEC) type cooler 130 that prevents the temperature rise of the light source 110 by reducing the light output when the temperature rises, It is reasonable to carry out by mounting the light source driver 161 to the control unit 60 to continuously monitor the variation of the laser output and the driving current according to the temperature change to control the laser output of high efficiency.

참고로, 종래 기술에 의한 상용노광장치는 355nm 레이저다이오드를 이용하였는데, I펙터, H펙터, G펙터로 특정할 수 있는 노광의 PR(photo register) 이나 DFR(dry film register)은 I펙터의 경우 365nm 레이저다이오드가, H펙터의 경우 405nm 레이저다이오드, G펙터의 경우 435nm 레이저다이오드에서 그 특성이 가장 우수하므로, 405nm 레이저다이오드를 사용하는 경우 많은 장점을 가지게 된다.For reference, a commercial exposure apparatus according to the prior art used a 355 nm laser diode, and the PR (photo register) or DFR (dry film register) of the exposure that can be specified as an I factor, an H factor, or a G factor is an I factor. The 365nm laser diode, the 405nm laser diode in the case of the H-factor, the 435nm laser diode in the case of the G factor is the most excellent, it has many advantages when using the 405nm laser diode.

상기 광원 드라이버(161)는 반전 앰프(Amp)와, 버퍼(Buffer)를 구비하고 상기 제어부(60)에 의해 제어 및 동작하여 광의 강도를 일정하게 유지하는 회로로 공지되어 있다. The light source driver 161 is known as a circuit having an inverting amplifier (Amp) and a buffer and controlled and operated by the control unit 60 to maintain a constant light intensity.

상기 광원(110)에서 출사된 광을 광축에 대해 평행광 또는 수렴광으로 만들어주는 콜리메이팅렌즈(120)가 광원(110)에서 출사된 광의 경로 상에 설치되고, 상 기 콜리메이팅렌즈(120)를 통과한 레이저을 가공할 수 있는 형태로 변환시켜주는 일반적인 호모나이저 등으로 형성된 빔쉐이퍼(200)를 설치할 수 있으며, 상기 빔쉐이퍼(200)를 통과한 광은 빔익스펜더(300)를 통하여 스캐너부(30)로 유도함이 타당하다. A collimating lens 120 that makes the light emitted from the light source 110 into parallel light or convergent light with respect to the optical axis is installed on the path of the light emitted from the light source 110, and the collimating lens 120 A beam shaper 200 formed of a general homogenizer or the like that converts the laser beam passing through the beam shaper may be installed, and the light passing through the beam shaper 200 passes through the beam expander 300 to the scanner unit ( 30) is reasonable.

상기 구성에 의해 상기 광원(110)은 주변온도에 관계없이 일정한 파워를 유지할 수 있으며, 상기 광원(110)에서 출사된 광은 마킹 파라메터에 따라서 광 모듈레이션을 되며 광 파워의 공간적인 분포가 고르게 된다.According to the configuration, the light source 110 may maintain a constant power regardless of the ambient temperature, and the light emitted from the light source 110 undergoes optical modulation according to the marking parameter and makes the spatial distribution of the optical power even.

상기 광의 굴절각을 변경시켜 광경로를 조정하는 스캐너부(30)의 경우 상기 광원부(100)의 개수에 맞추어 구비하여 각 광원부(100)에서 출사되는 빛을 반사시키되, 그 일 예로 광을 반사하도록 회전가능하게 장착된 미러부와, 상기 미러부를 회동시키는 구동부로 구성된 통상적인 갈바노미터스캐너를 장착하여 실시할 수 있다. 이러한 경우 2기의 갈바노미터스캐너를 각 미러부가 직교하도록 구성하여 광 경로의 X좌표 및 Y좌표를 조절하여 가공 신호와 동기 하여 레이저의 광 경로를 가공 면에 주사할 수 있도록 제어하며 레이저 모듈레이션 신호와 동기화하여 실시함이 타당하다.In the case of the scanner unit 30 which adjusts the optical path by changing the angle of refraction of the light, the scanner unit 30 is provided according to the number of the light source units 100 to reflect the light emitted from each light source unit 100, but rotates to reflect the light. It is possible to carry out by attaching a conventional galvanometer scanner composed of a mirror unit which is mounted as possible and a driving unit which rotates the mirror unit. In this case, two galvanometer scanners are configured to be orthogonal to each mirror to control the X and Y coordinates of the optical path so that the optical path of the laser can be scanned on the machining surface in synchronization with the processing signal. It is reasonable to carry out in synchronization with.

상기 스캐너부(30)에 의해 반사된 광은 투광부(40)를 통하여 스테이지부(10)상에 입사되는데, 도 2에서 도시하는 바와 같이 갈바노미터스캐너를 사용하는 경우 상기 투광부(40)는 에프쎄타렌즈(F-theta lens)를 사용하여 갈바노미터스캐너에서 반사된 광의 초점거리를 일정하게 조절하여 주사된 광을 스테이지부(10)로 결상시킨다. The light reflected by the scanner unit 30 is incident on the stage unit 10 through the light projecting unit 40. When using a galvanometer scanner as shown in FIG. 2, the light projecting unit 40 is used. By using an F-theta lens (F-theta lens) to constantly adjust the focal length of the light reflected from the galvanometer scanner to form the scanned light to the stage portion (10).

상기 스테이지부(10)는 LCD 패널, 기판등의 작업물이 로딩되는 작업대로, 작업물을 운반하고 가공영역에 고정하기도 하여 로딩된 작업물을 주주사 방향(Y) 내지 부주사방향(X)으로 이동하도록 제어부(60)에 의해 조정되고, 온 더 플라이(On the fly; 이동중인 물체에 레이저 가공을 하기 위한 제어 방법)를 적용하기 위해서는 상기 스테이지부(10)의 좌표값을 상기 제어부(60) 전송하여 실시한다.The stage unit 10 is a work load such as an LCD panel, a substrate, and the like, which carries the work and fixes the work area in the main scanning direction (Y) to the sub scanning direction (X). The controller 60 adjusts the coordinates of the stage unit 10 so as to be adjusted by the controller 60 to move, and to apply On the fly (control method for laser processing the moving object). To transmit.

상기 제어부(60)는 작업물을 특정 패턴으로 가공하기 위한 각종 제어요소들(각각의 광원(110)들에 대한 온/오프 시간, 패턴 모양에 따른 수 개의 스캐너부(30)들의 제어 값, 스테이지 위치 값, 실제 패턴 모양)을 통합하고 제어하며, 작업물에 형성될 패턴정보를 제공하는 패턴정보원(70)은 미리 설정된 패턴데이터를 패턴정보로 프로그래밍하여 소정의 알고리즘과 함께 상기 제어부(60)로 공급하는 일반적인 컴퓨터 등을 사용할 수 있다.The control unit 60 controls various control elements (on / off time for each light source 110, control values of several scanner units 30 according to a pattern shape, a stage, etc.) for processing a workpiece into a specific pattern. A pattern information source 70 that integrates and controls the position value, the actual pattern shape), and provides the pattern information to be formed on the workpiece, by programming the preset pattern data into the pattern information to the controller 60 together with a predetermined algorithm. A general computer supplied can be used.

기존의 레이저를 이용한 노광장치의 경우, 광원에 대해 고가의 고체 펄스 레이저 하나를 이용하여, 멀티헤드 시스템에서 레이저를 분기하고 특정 패턴 마킹을 위하여 AO 모듈레이터(acoustic optical modulator)를 사용하여 레이저를 제어하였기 때문에 그 제어 방식과 구성이 복잡하고 많은 비용이 소요되었으나, 본 발명은 각각의 멀티헤드에 대응하는 각각의 광원을 사용하여 그 제어가 용이하고 비용을 절감할 수 있는 장점이 있다.In the case of an exposure apparatus using a conventional laser, a laser is controlled by using an AO modulator (Aoustic optical modulator) for branching a laser in a multihead system and marking a specific pattern by using an expensive solid pulse laser for a light source. Therefore, the control method and configuration are complicated and costly, but the present invention has advantages in that the control is easy and the cost can be reduced by using each light source corresponding to each multihead.

상기에서 설명한 바와 같이 본 발명은 복수개의 405nm 레이저다이오드를 광원으로 이용하고 상기 광원에 대응하는 복수개의 스캐너부 및 투광부로 광 경로를 조정하여 가공물의 광범위한 영역에 걸쳐 특정 패턴 마킹을 가능하게 하여 노광 작업의 편의성과 효율성을 향상시키는 탁월한 효력을 발휘하는 발명이다.As described above, the present invention uses a plurality of 405nm laser diode as a light source, and adjusts the optical path to a plurality of scanner parts and light transmitting parts corresponding to the light source to enable specific pattern marking over a wide range of workpieces. It is an invention that exerts an excellent effect of improving convenience and efficiency.

Claims (3)

405nm 레이저다이오드로 형성된 광원을 이용하여 광을 발생하는 다수의 광원부와, 상기 광원부에서 발생하는 광을 수광하여 소정경로로 반사하는 상기 광원부에 대응하는 다수의 스캐너부와, 상기 스캐너부에서 반사된 광을 스테이지부에 주사시키는 투광부와, 패턴정보부에서 전송받은 전기적 신호에 의해 원하는 패턴을 형성하도록 상기 광원부, 스캐너부 및 스테이지부를 조정하여 광의 궤적을 조절하는 제어부로 형성된 노광장치에 있어서, 상기 광원부와 스캐너부의 경로상에 빔쉐이퍼와 빔익스펜더를 구비하는 것을 특징으로 하는 405nm 레이저다이오드를 이용한 노광장치. A plurality of light source units generating light using a light source formed of a 405 nm laser diode, a plurality of scanner parts corresponding to the light source parts receiving light reflected from the light source part and reflecting a predetermined path, and light reflected from the scanner part An exposure apparatus formed with a light transmitting unit for scanning a stage unit and a control unit for adjusting the light trajectory by adjusting the light source unit, the scanner unit and the stage unit to form a desired pattern by the electrical signal received from the pattern information unit, the light source unit and An exposure apparatus using a 405 nm laser diode, comprising a beam shaper and a beam expander on a path of the scanner unit. 삭제delete 삭제delete
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Citations (6)

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Publication number Priority date Publication date Assignee Title
JPH05207235A (en) * 1992-01-29 1993-08-13 Fuji Photo Film Co Ltd Picture recorder
KR19990020356A (en) * 1997-08-30 1999-03-25 윤종용 Two-line simultaneous scanning device and method in laser beam printer
JP2004038051A (en) 2002-07-08 2004-02-05 Fuji Photo Film Co Ltd Laser light source for exposure
JP2004354659A (en) 2003-05-29 2004-12-16 Dainippon Screen Mfg Co Ltd Pattern drawing device
KR20050061231A (en) * 2003-12-18 2005-06-22 삼성에스디아이 주식회사 Digital exposure apparatus using telecentric optical system
KR20060044748A (en) * 2004-03-26 2006-05-16 후지 샤신 필름 가부시기가이샤 Image exposure apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05207235A (en) * 1992-01-29 1993-08-13 Fuji Photo Film Co Ltd Picture recorder
KR19990020356A (en) * 1997-08-30 1999-03-25 윤종용 Two-line simultaneous scanning device and method in laser beam printer
JP2004038051A (en) 2002-07-08 2004-02-05 Fuji Photo Film Co Ltd Laser light source for exposure
JP2004354659A (en) 2003-05-29 2004-12-16 Dainippon Screen Mfg Co Ltd Pattern drawing device
KR20050061231A (en) * 2003-12-18 2005-06-22 삼성에스디아이 주식회사 Digital exposure apparatus using telecentric optical system
KR20060044748A (en) * 2004-03-26 2006-05-16 후지 샤신 필름 가부시기가이샤 Image exposure apparatus

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