KR100835976B1 - An array substrate for In-Plane switching mode LCD and method for fabricating of the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field type liquid crystal display device, and more particularly, to an array substrate for a transverse electric field type liquid crystal display device capable of securing a high aperture ratio and a method of manufacturing the same.

The array substrate for a transverse electric field type liquid crystal display device according to the present invention designs the common electrode in close proximity to the data line and asymmetrically designs the area of the common electrode according to the rubbing direction.

Such a configuration can improve the aperture ratio compared to the same area of the existing pixels, thereby making it possible to manufacture a transverse electric field type liquid crystal display device that realizes high image quality.

Description

An array substrate for in-plane switching mode LCD and method for fabricating of the same}             

1 is a plan view schematically showing one pixel of a conventional array substrate for a transverse electric field type liquid crystal display device;

FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. 1;

3 is a cross-sectional view illustrating the electric field distribution between the common electrode and the pixel electrode and the alignment direction of the liquid crystal layer accordingly;

4 is a plan view schematically showing a part of an array substrate for a transverse electric field type liquid crystal display device according to the present invention;

FIG. 5 is a cross-sectional view illustrating the transmittance and the configuration of a common electrode according to the cutting process taken along the line VV ′ of FIG. 4 when the rubbing process is performed in the first direction.

FIG. 6 is a cross-sectional view illustrating the transmittance and the configuration of a common electrode according to the cutting process taken along the line VV ′ of FIG. 4 and the rubbing process is performed in the second direction.

7A to 7D and FIGS. 8A to 8D are cross-sectional views illustrating a process sequence of the present invention by cutting along the lines VII-VII and VII-VII of FIG. 4.

<Description of the symbols for the main parts of the drawings>

100 substrate 114 gate electrode

116: common wiring 117: common electrode

120: active layer 124: data wiring

126 source electrode 128 drain electrode

130: pixel electrode 136: transparent electrode pattern

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device, and more particularly, to an array substrate for an in-plane switching mode liquid crystal display device having an improved aperture ratio and a manufacturing method thereof.

In general, the driving principle of the liquid crystal display device uses the optical anisotropy and polarization of the liquid crystal.

Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light polarized by optical anisotropy may be arbitrarily modulated to express image information.                         

Currently, active matrix LCDs (AM-LCDs) in which thin film transistors and pixel electrodes connected to the thin film transistors are arranged in a matrix manner have attracted the most attention due to their excellent resolution and video performance.

The liquid crystal display device includes a color filter substrate (upper substrate) on which a common electrode is formed, an array substrate (lower substrate) on which a pixel electrode is formed, and a liquid crystal filled between the upper and lower substrates. And a method in which the liquid crystal is driven by an electric field applied up and down by the pixel electrode, and has excellent characteristics such as transmittance and aperture ratio.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent. Therefore, new techniques have been proposed to overcome the above disadvantages. The liquid crystal display device to be described below has an advantage of excellent viewing angle characteristics by a liquid crystal driving method using a transverse electric field.

Hereinafter, a conventional array substrate for a transverse electric field type liquid crystal display device and a manufacturing method thereof will be described with reference to the drawings.

1 is a plan view schematically illustrating a part of a conventional array substrate for a transverse electric field type liquid crystal display device.

As shown in the drawing, a conventional array substrate 10 for a transverse electric field type liquid crystal display device has a plurality of gate wirings 12, a common wiring 16 formed in one direction in parallel with a predetermined interval, and intersects the two wirings. In particular, the data line 24 defining the pixel P is formed from the gate line 12.                         

At the intersection of the gate line 12 and the data line 24, the gate electrode 14 connected to the gate line 12, the active layer 20 and the source electrode formed on the gate electrode 14 are disposed. And a thin film transistor T including a drain electrode 28 and a drain electrode 28. The source electrode 26 is connected to the data line 24, and the gate electrode 14 is connected to the gate line 12. ).

The pixel electrode 30 connected to the drain electrode 28 and the common electrode 17 connected in parallel with the pixel electrode 30 and connected to the common wiring 16 are disposed on the pixel area P. This is made up.

The pixel electrode 30 extends from the drain electrode 28 to the pixel region P and a plurality of vertical portions 30b extending vertically from the extension portion 30a and spaced apart from each other by a predetermined distance. ) And a horizontal portion 30c which connects the vertical portion 30b to one upper portion of the common wiring 16.

The common electrode 17 extends vertically from the common wiring 16 to the pixel region P, and includes a plurality of vertical portions 17b intersecting with the vertical portions 30b of the pixel electrodes, and each of the vertical portions. It consists of the horizontal part 17a which connects 17b as one.

The conventional array substrate for a transverse electric field type liquid crystal display device configured as described above is designed so that the vertical portion 17b of the common electrode is proximate to the data line 24, and this configuration is an image flowing through the data line 24. The vertical cross talk can be prevented by preventing the signal and the signal of the pixel electrode 30b from interfering with each other.                         

This will be described with reference to FIG. 2.

FIG. 2 is a cross-sectional view of a transverse electric field type liquid crystal display device taken along line II-II ′ of FIG. 1.

As illustrated, the transverse electric field type liquid crystal display device is protected by an overcoat layer 53 formed thereon, and is disposed between the sub color filters 57a. 57b and the sub color filters showing different colors. As described with reference to FIG. 1, the first substrate 51 having the color filter formed of the matrix 55, the common electrode 17b configured to be adjacent to the data line 24, the common electrode 17b The first substrate 10 includes pixel electrodes 30b that are alternately spaced apart from each other and are parallel to each other.

In the above-described configuration, the area most affected by the data signal is a block formed by the outermost common electrode 17b and the pixel electrode 30b, where the movement of the liquid crystal is determined by three fields. do.

In detail, the electric field E1 generated between the common electrodes 17b (A) and 17b (B) and the pixel electrode 30b formed on both sides of the data line 24, the data line 24 and the pixel electrode The electric field E2 generated between 30b and the electric field E3 generated between the black matrix 55 formed on the upper substrate and the pixel electrode 30b are included.

Of the components of the electric fields E1, E2, and E3 related to the aforementioned crosstalk, the electric field E2 generated between the data wiring 24 and the pixel electrode 30b , the pixel electrode 30b, It is an electric field E3 generated between the black matrices 55.

A general method of preventing the crosstalk is to design a wide area of the common electrode.

Therefore, in the related art, the data lines 24 and the vertical portions 17b (A) and 17b (B) of the common electrode configured to be adjacent thereto are configured to have a larger width than other regions.

However, the above-described configuration has a problem in that the aperture ratio decreases by that much because the area of the common electrode occupying the pixel is large.

The present invention has been made for the purpose of solving the above problems, and proposes a method of designing a lower common electrode in the direction of the rubbing process on the surface of the alignment layer formed on the top layer of the array substrate.

That is, the alignment film serves to define the pre-tilt angle and the alignment direction of the liquid crystal.

However, due to the pretilt angle, there is an easily moving area when an electric field is applied, whereas a moving area is generated only when a stronger electric field is applied.

Hereinafter, the motion of the liquid crystal according to the rubbing direction and the distribution of the electric field will be described with reference to FIG. 3.

3 is a schematic cross-sectional view taken along the line II-II ′ of FIG. 1.

As shown, when the alignment direction D of the liquid crystal is determined as shown in accordance with the pretilt angle of the alignment film (not shown) in which the rubbing process is performed in a predetermined direction (G2 of FIG. 1), when a voltage is applied, An electric field E2 (A) or E2 (B) is distributed between the data line 24 and the pixel electrode 30b.

At this time, the directions of the electric fields E2 (A) and E2 (B) are directed from the pixel electrodes 30b on both sides toward the data lines 24 around the data lines, and have opposite distributions.

Therefore, the alignment direction D of the liquid crystal L positioned in the edge region of the pixel electrode 30b of one side N1 with respect to the data line 24 is opposite to the direction of the electric field E2 (A), while the other side The alignment direction D of the liquid crystal L located at (N2) is configured to be parallel to the alignment direction E2 (B) of the electric field.

In this configuration, the liquid crystals L oriented in the same direction as the distribution of the electric field move easily, while the liquid crystals L oriented in a direction different from the distribution of the electric field show a characteristic of easily moving when more electric fields are applied. .

As a result, the liquid crystal L positioned in the edge region M of the pixel electrode 30b in which the electric field is distributed between the data lines 24 has a higher luminance than the center portion in the low voltage region, thereby causing cross talk. Is the main cause of

Therefore, it is natural to widen the width of the common electrode 17b (B) to weaken the electric field distribution of this portion.

However, the common electrode 17b (A) constituted in a region where the alignment of the liquid crystal is small does not have to be widened.

By using this characteristic, the width of the common electrode 17b (B) located in the region where the liquid crystal is easily moved can be relatively large , and the width of the outermost common electrode 17b (A) on the opposite side can be made small. do.

In this way, it is not necessary to design the width of each common electrode adjacent to both sides of the data wiring to have the same width, and only the width of the common electrode positioned on one side can be designed to be wide so that the aperture ratio can be ensured.

Accordingly, an object of the present invention is to manufacture a high-quality transverse electric field type liquid crystal display device having an improved aperture ratio by applying the principle described above.

An array substrate for a transverse electric field type liquid crystal display device according to the present invention for achieving the above object includes a transparent insulating substrate having a plurality of pixel areas defined; A plurality of gate lines and a plurality of common lines formed in one direction on one side of the plurality of pixel areas; A plurality of data lines crossing the plurality of gate lines; A thin film transistor positioned at an intersection point of the plurality of gate lines and the plurality of data lines; A plurality of pixel electrodes formed in the plurality of pixel regions; And a plurality of common electrodes formed in the plurality of pixel regions so as to alternate with the plurality of pixel electrodes, and having different widths on both sides of each of the plurality of data lines, and connected to the plurality of common lines. A width of a common electrode positioned in a direction in which a rubbing process is started at both sides of each of the plurality of data wires in two common electrodes formed adjacent to both sides of the plurality of data wires based on the respective data wires. It is characterized by a wider configuration.

Each of the plurality of common electrodes includes a horizontal portion and a plurality of vertical portions, and when the rubbing process is performed from the upper left to the lower right, the width of the vertical portion adjacent to each left side of each of the plurality of data wires is wide. When the rubbing process is carried out from the upper right to the lower left, the width of the vertical portion adjacent to the right side of each of the plurality of data is characterized by a wide configuration.

The plurality of common wirings and the plurality of gate wirings are made of the same material.

And a plurality of transparent electrode patterns extending over the plurality of gate wires while in contact with the horizontal parts of the plurality of pixel electrodes, wherein each of the plurality of common wires and the horizontal parts of the plurality of pixel electrodes are first auxiliary. The capacitor unit is configured, and each of the plurality of transparent electrode patterns and the plurality of gate lines constitutes a second auxiliary capacitor unit.

According to an aspect of the present invention, there is provided a method of fabricating an array substrate for a transverse electric field type liquid crystal display device, including: defining a plurality of pixel regions on a substrate; A plurality of gate wirings formed in one direction and a plurality of common wirings on one side of the plurality of pixel regions, and simultaneously connected to the plurality of common wirings in the plurality of pixel regions, respectively, Forming a plurality of common electrodes having different widths at positions on both sides; Forming a plurality of data lines crossing the plurality of gate lines; Forming a thin film transistor at each intersection point of the plurality of gate lines and the plurality of data lines; Forming a plurality of pixel electrodes in the plurality of pixel areas inside the common electrode formed adjacent to the plurality of data lines so as to alternate with the plurality of common electrodes, wherein each of the plurality of common electrodes is formed. In the two common electrodes formed adjacent to both sides of the data line, the width of the common electrode positioned in the direction in which the rubbing process starts on both sides of each of the plurality of data lines is wider.
The pixel electrode may include an extension part extending from the drain electrode of the thin film transistor to the pixel area, a vertical part extending vertically from the extension part, and a horizontal part connecting the vertical part to the top of the common wiring. It features.
The common electrode may include a plurality of vertical parts spaced apart from and parallel to the pixel electrode and a horizontal part connecting them to one.
And forming a transparent electrode pattern extending over the gate wiring while in contact with the horizontal portion of the pixel electrode.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

Example

The present invention is characterized in that the asymmetrical design of the width of the common electrode formed in the lower portion in accordance with the rubbing direction of the rubbing process that proceeds on the surface of the alignment layer.

4 is a plan view schematically illustrating a part of an array substrate for a transverse electric field type liquid crystal display device according to the present invention.

As illustrated, the array substrate 100 for a transverse electric field type liquid crystal display device according to the present invention includes a plurality of gate wirings 112, a common wiring 116, and a plurality of gate wirings 112 arranged in one direction in parallel with a predetermined interval therebetween. In particular, the gate line 112 and the gate line 112 form a data line 124 that defines the pixel P.

A thin film transistor T including a gate electrode 114, an active layer 120, a source electrode 126, and a drain electrode 128 is formed at an intersection point of the gate wiring 112 and the data wiring 124. The source electrode 126 is connected to the data line 124 and the gate electrode 114 is connected to the gate line 112.

In this case, as shown in the drawing, the source electrode is configured to have a “U” shape, and the drain electrode is configured to be spaced apart from the inside of the source electrode by a predetermined interval.

Such a configuration has an advantage in that the width of the active channel exposed between the source and drain electrodes 126 and 128 is designed to be wide and the length of the channel is short to facilitate the flow of carriers.

The pixel electrode 130 connected to the drain electrode 128 on the pixel region P, and the common electrode 117 configured to be parallel to the pixel electrode 130 and connected to the common wiring 116. Configure

The pixel electrode 130 may include an extension part 130a extending from the drain electrode 128, a plurality of vertical parts 130b vertically extending from the extension part 130a and spaced apart from each other by a predetermined distance, and the common wiring. It consists of a horizontal portion (130c) connecting the vertical portion (130b) as one at the top of the (116).

The common electrode 117 extends in the vertical direction from the common wiring 116 and crosses the vertical portion 130b of the pixel electrode, and each of the vertical portions 117b is formed as one. It consists of a horizontal part 117a to connect.

The storage capacitor portion connected in parallel with the pixel electrode 130 is a first storage capacitor portion having a part of the common wiring 116 as a first electrode and the horizontal portion 130c of the pixel electrode 130 as a second electrode. A second storage capacitor portion including a transparent electrode pattern 136 in contact with the horizontal portion 130c of the pixel electrode 130 as a first electrode (C1) and part of the gate wiring 112 as a first electrode. (C2).

In the above-described configuration, when the rubbing process is performed in the G1 direction as illustrated, the vertical portion 117b of the common electrode 117 that corresponds to the portion where the rubbing direction starts with respect to the data line 124 (A). ) Is designed to be wider than the vertical portion 117b (A) of the common electrode 117 formed on the other side.

On the contrary, when the rubbing process is performed in the G2 direction, the width of the common electrode 117 is asymmetrically designed as opposed to the above case.

Hereinafter, the configuration of the common electrode according to each case will be described with reference to FIGS. 5 and 6.                     

FIG. 5 is a cross-sectional view showing the configuration of the vertical crosstalk (light leakage) generated according to each region and the common electrode according to the case where rubbing proceeds in the 315 degree direction G1 (from the upper left to the lower right). .

As illustrated, when the rubbing process is performed in the 315 degree direction (upper left to lower right), the edge region F1 of the vertical portion 130b of the left pixel electrode 130 centered on the data line 124. We can observe that large crosstalk (light leakage) Q1 occurs at

Of course, the largest crosstalk (light leakage) occurs between the horizontal and vertical portions 117a (A) and 117b (B) of the data line 124 and the common electrode 117 adjacent thereto. Since the screen is covered by the black matrix 300 formed on the upper substrate (not shown), there is no problem.

The problem is crosstalk occurring in the pixel region P. FIG.

The large crosstalk (transmittance) value means that the abnormal alignment characteristic of the liquid crystal is large. Therefore, in this case, the electric field distributed between the vertical portion 130b of the pixel electrode 130 and the data line 124 by widening the width of the vertical portion 117b (A) of the common electrode 117 on the left side. Should be weakened.

Therefore, when the rubbing direction progresses from the upper left to the lower right, the width of the vertical portion 117b of the common electrode 117 adjacent to the left side of the data line 124 is designed to be wide.

6 illustrates a case in which the rubbing process is performed in the 45 degree direction (the upper right side to the lower left direction). In this case, the vertical portion 130b of the pixel electrode 130 formed on the right side of the data line 124 is formed. It can be observed that the value of the crosstalk (light leakage) Q2 is large in the edge region F2.

In such a case, the width of the vertical portion 117b (B) of the common electrode 117 formed on the right side of the data line 124 should be large.

In conclusion, a characteristic of the present invention is that the common electrode of the horizontal and vertical portions 117b (A) and 117b (B) of the common electrode 117 formed close to the data line 124 in the direction in which the rubbing process starts. To make the width of the design more wide.

In this way, the aperture ratio can be improved rather than designing all the widths of the common electrodes formed close to the data wiring.

Hereinafter, a manufacturing process of an array substrate for a transverse electric field type liquid crystal display device according to the present invention will be described with reference to FIGS. 7A to 7D and 8A to 8D.

7A to 7D and FIGS. 8A to 8D are cross-sectional views illustrating a process sequence of the present invention by cutting along lines VIII-VIII and VIII-X of FIG. 4 (FIGS. 7A to 7D are thin film transistors and A part of the pixel area is shown, and FIGS. 8A to 8D show the storage capacitor and the data wiring area.)

First, as shown in FIGS. 7A and 8A, an aluminum alloy such as copper (Cu), aluminum (Al), aluminum neodymium (AlNd), chromium (Cr), molybdenum (Mo), and tungsten on the substrate 100 may be used. And depositing and patterning a selected one of the conductive metal groups including (W) to form a gate wiring 112 including the gate electrode 114 and a common wiring spaced apart in parallel with the gate wiring 112 by a predetermined interval ( A common electrode 117 including a plurality of vertical portions 117b protruding vertically from the common wiring 116 and a horizontal portion 117a connecting the plurality of vertical portions 117b into one. do.                     

Next, one selected from the group of inorganic insulating materials including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) on the front surface of the substrate 100 including the gate wiring 112 and the common wiring 116. The vapor deposition is performed to form the gate insulating film 118.

Next, amorphous silicon (a-Si: H) and amorphous silicon (n + a-Si: H) including impurities are deposited on the gate insulating layer 118 and patterned to form an active layer 120 and an ohmic contact. Form layer 122.

As shown in FIGS. 7B and 8B, one of the conductive metal groups as described above is deposited and patterned on the entire surface of the substrate 100 on which the active layer 120 and the ohmic contact layer 122 are formed. A data line 124 defining a pixel region P by crossing the gate line 112 and the common line 116, and protruding from the data line 124 and on one side of the active layer 120. Overlapping source electrode 126 and drain electrode 128 spaced apart from each other, extension portion 130a extending in one direction from the drain electrode 128 to the pixel region P and the extension portion A pixel electrode including a plurality of vertical portions 130b extending vertically and a horizontal portion 130c connecting the plurality of vertical portions 130b into one is formed.

In this case, the horizontal portion 130c of the pixel electrode 130 is formed on the common wiring 116.

In the above-described process, the ohmic contact layer 122 exposed between the two electrodes is etched using the source electrode 126 and the drain electrode 128 as a mask to expose the active layer 120.

As illustrated in FIGS. 7C and 8C, silicon nitride (SiN _x ) and silicon oxide (I) may be formed on the entire surface of the substrate 100 on which the source and drain electrodes 126 and 128, the data line 124, and the pixel electrode 130 are formed. A protective film 132 is formed by depositing one selected from the group of inorganic insulating materials including SiO ₂ ).

Subsequently, the passivation layer 132 is patterned to form a contact hole 134 exposing a part of the horizontal portion 130c of the pixel electrode 130.

Next, as shown in FIGS. 7D and 8D, one of a transparent conductive metal group including indium tin oxide (ITO) and indium zinc oxide (IZO) is deposited on the passivation layer 132. By patterning, the transparent electrode pattern 136 extending to the upper portion of the adjacent gate line 112 while contacting the horizontal portion 130c of the exposed pixel electrode 130 is formed.

In this way, a part of the common wiring 116 functions as a first electrode, and the first storage capacitor C1 and the pixel electrode in which the horizontal portion 130c of the pixel electrode functions as a second electrode. A second storage capacitor C1 in which the transparent electrode pattern 136 in contact with the horizontal portion 130c of the second electrode functions as a first electrode and a part of the gate wiring 112 functions as a second electrode. , C2).

In the above-described configuration, the horizontal and vertical portions 117b (A) and 117b (B) of the common electrode 117 formed adjacent to the data line 124 should be designed differently according to the rubbing direction to be performed later. In other words, the width of one common electrode 117 in the direction in which the rubbing process starts around the data line 124 is designed to be larger than the width of the other common electrode 117. Example)

As a result, since the aperture ratio can be secured by the reduced width of the horizontal portion 117b (A) of the common electrode 117, a transverse electric field type liquid crystal display device can be manufactured which realizes high brightness and high image quality.

Therefore, the transverse electric field type liquid crystal display device according to the present invention is designed to widen the width of the common electrode of one side where the rubbing direction starts among the common electrodes of the vertical component close to the data wiring among the common electrodes of the array substrate, and the common of the other side. By designing the width of the electrode small, it is possible to secure the opening ratio as much as the reduced common electrode width.

Therefore, there is an effect that can produce a transverse electric field type liquid crystal display device that implements high image quality.

Claims (12)

A transparent insulating substrate on which a plurality of pixel regions are defined; A plurality of gate lines and a plurality of common lines formed in one direction on one side of the plurality of pixel areas; A plurality of data lines crossing the plurality of gate lines; A thin film transistor positioned at an intersection point of the plurality of gate lines and the plurality of data lines; A plurality of pixel electrodes formed in the plurality of pixel regions; A plurality of common electrodes formed in the plurality of pixel regions so as to alternate with the plurality of pixel electrodes, and having different widths on both sides of each of the plurality of data lines, and connected to the plurality of common lines; And two common electrodes formed adjacent to both sides of each of the plurality of common wires based on the respective data wires, in a direction in which a rubbing process is started at both sides of each of the plurality of data wires. An array substrate for a transverse electric field type liquid crystal display device, characterized in that the width of the common electrode positioned is wider. delete The method of claim 1, Each of the plurality of common electrodes includes a horizontal portion and a plurality of vertical portions, and when the rubbing process is performed from the upper left to the lower right, the width of the vertical portion adjacent to each left side of each of the plurality of data wires is wide. When the rubbing process is carried out from the upper right to the lower left, the array substrate for a transverse electric field type liquid crystal display device configured to widen the width of the vertical portion adjacent to the right side of each of the plurality of data. The method of claim 1, And the plurality of common wirings and the plurality of gate wirings are formed of the same layer and the same material. The method of claim 1, The plurality of common wirings and the plurality of gate wirings are transverse electric fields including one selected from a group of conductive metals consisting of aluminum (Al), aluminum alloy, tungsten (W), molybdenum (Mo), copper (Cu), and chromium (Cr). Array board for liquid crystal display device. The method of claim 1, And a plurality of transparent electrode patterns extending above the plurality of gate wires while in contact with the horizontal portions of the plurality of pixel electrodes. The method of claim 6, Each of the plurality of common wires and the plurality of pixel electrodes constitutes a first storage capacitor, and each of the plurality of transparent electrode patterns and the plurality of gate wires constitute a second storage capacitor. Array substrate. Defining a plurality of pixel regions on the substrate; A plurality of gate wirings formed in one direction and a plurality of common wirings on one side of the plurality of pixel regions, and simultaneously connected to the plurality of common wirings in the plurality of pixel regions, respectively, Forming a plurality of common electrodes having different widths at positions on both sides; Forming a plurality of data lines crossing the plurality of gate lines; Forming a thin film transistor at each intersection point of the plurality of gate lines and the plurality of data lines; Forming a plurality of pixel electrodes inside the common electrode formed adjacent to each of the plurality of data wires so as to alternate with the plurality of common electrodes in the plurality of pixel areas. And in the two common electrodes respectively formed adjacent to both sides of the plurality of common wires based on the plurality of data wires, in a direction in which a rubbing process is started at both sides of each of the plurality of data wires. A method of manufacturing an array substrate for a transverse electric field type liquid crystal display device, characterized by forming a wider width of the common electrode. delete The method of claim 8, The forming of the plurality of pixel electrodes may further include forming a plurality of transparent electrode patterns extending above the plurality of gate lines while contacting horizontal portions of the plurality of pixel electrodes. Method for manufacturing array substrate for device. The method of claim 10, Each of the plurality of common wirings and the plurality of pixel electrodes forms a first storage capacitor, and each of the plurality of transparent electrode patterns and the plurality of gate wirings form a second storage capacitor. Method for manufacturing an array substrate for use. The method of claim 10, And the plurality of transparent electrode patterns are formed of a transparent conductive metal material including indium tin oxide (ITO) and indium zinc oxide (IZO).

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