KR100830126B1 - Electrode for Vacuum Processing Apparatus and Vacuum Processing Apparatus having same - Google Patents

Abstract

The present invention relates to a vacuum processing apparatus, and more particularly, to an electrode for a vacuum processing apparatus for etching or depositing a substrate such as a glass substrate or a wafer for a liquid crystal display panel, and a vacuum processing apparatus having the same.

According to the present invention, a gate for entering and exiting a substrate is formed at one side, and is installed in a chamber in which a processing space for performing a processing process is formed therein, and an electrode to which power is applied to form a plasma in the processing space. And an inlet for supplying a refrigerant into the refrigerant passage, and an outlet for discharging the refrigerant from the refrigerant passage, wherein the inlet is formed at an edge of the electrode, and the outlet is formed at a central portion of the electrode. An electrode for a vacuum processing apparatus is disclosed.

Vacuum Processing Equipment, Plasma, Refrigerant, Gate, Temperature Deviation

Description

Electrode for vacuum processing apparatus and vacuum processing apparatus having the same {Electrode for Vacuum Processing Apparatus and Vacuum Processing Apparatus having same}

Figure 1a is a graph showing the temperature distribution of the electrode in a conventional vacuum processing apparatus.

FIG. 1B is a graph showing an etching rate of a substrate according to the temperature distribution shown in FIG. 1A.

2 is a cross-sectional view showing a vacuum processing apparatus according to the present invention.

3 is a conceptual diagram illustrating a refrigerant passage formed in a lower electrode installed in the vacuum processing apparatus of FIG. 2.

4A is a plan view of the electrode of FIG. 3.

4B is a cross-sectional view taken along the B-B direction in FIG. 4A.

4C is an enlarged cross-sectional view enlarging C portion in FIG. 4A.

5 is a vertical cross-sectional view in the V-V direction in FIG. 4A.

FIG. 6 is a conceptual diagram illustrating a modification of a refrigerant path formed in an electrode installed in the vacuum processing apparatus of FIG. 2.

FIG. 7 is a conceptual view illustrating another modified example of the refrigerant flow path formed in the electrode installed in the vacuum processing apparatus of FIG. 2.

***** Explanation of symbols for main parts of drawing *****

100: chamber

210: upper electrode 220: lower electrode

310: refrigerant flow path 320: inlet

330: outlet

The present invention relates to a vacuum processing apparatus, and more particularly, to an electrode for a vacuum processing apparatus for etching or depositing a substrate such as a glass substrate or a wafer for a liquid crystal display panel, and a vacuum processing apparatus having the same.

In order to perform the treatment process, the vacuum processing apparatus installs electrodes in a chamber in which a processing space is formed, and applies a power to the electrodes in a vacuum to form plasma to deposit and etch a surface of a substrate seated on the electrodes. Perform the process.

1A is a graph showing a temperature distribution of an electrode in a conventional vacuum processing apparatus, and FIG. 1B is a graph showing an etching rate of a substrate according to the temperature distribution shown in FIG. 1A.

In the conventional vacuum processing apparatus, the temperature of the electrode is increased as plasma is continuously formed in the processing space, and the temperature distribution of the electrode is unevenly formed because the internal structure of the chamber forming the processing space is not constant.

On the other hand, the temperature distribution of the electrode on which the substrate is seated has a great influence on the processing of the substrate. For example, as shown in FIGS. 1A and 1B, the temperature is distributed relatively lower than the portion where the center portion of the electrode faces the edge portion and the gate, and in accordance with the temperature distribution shown in FIG. It can be seen that ER is relatively low, and the etch rate is relatively high in the edge portion and the portion facing the gate (the left direction in FIGS. 1A and 1B).

That is, in the conventional vacuum processing apparatus, it can be seen that the temperature is distributed relatively high at the edge portion of the electrode and the portion facing the gate, and thus the etching rate is not constant and is unevenly distributed. Therefore, as shown in FIGS. 1A and 1B, when the temperature distribution of the electrode is not constant, the etching rate of the substrate is changed, which indicates that the temperature distribution of the electrode affects the etching rate of the substrate, that is, the processing process. Can be.

However, in the conventional vacuum processing apparatus, the above-described points are not taken into consideration, so that the temperature deviation of the electrode is severely formed according to the internal structure of the chamber, and the temperature deviation formed in the electrode prevents the processing process for the substrate from being performed at a constant rate. Raises the problem.

In particular, in the case of a vacuum processing apparatus for processing a large LCD panel glass substrate (the length of one side is over 2M depending on the size), unlike a small wafer, the temperature deviation of the electrode is relatively large. have.

In addition, the conventional vacuum processing apparatus has a refrigerant flow path formed therein for temperature control of the electrode, and has a problem in that the temperature of the electrode cannot be uniformly controlled because the length of the refrigerant flow path is relatively long.

SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide an electrode for a vacuum processing apparatus capable of compensating a temperature deviation between a center portion and an edge portion of an electrode and to uniformize the temperature distribution of the electrode, and a vacuum processing apparatus having the same. To provide.

Another object of the present invention is to provide a vacuum processing apparatus electrode and a vacuum processing apparatus having the same, which can uniform the temperature distribution of the electrode by compensating the temperature deviation of the electrode formed by the structure inside the chamber in which the electrode is installed. .

The present invention has been created in order to achieve the object of the present invention as described above, the present invention is formed in a chamber in which a gate for entering and exiting a substrate is formed on one side, the processing space for performing a processing process is formed therein An electrode to which power is applied to form a plasma in the processing space includes a coolant channel, an inlet for supplying a coolant into the coolant channel, and an outlet for discharging the coolant from the coolant channel. Disclosed is an electrode for a vacuum processing apparatus, characterized in that formed in the edge portion, the outlet is formed in the central portion of the electrode.

The refrigerant flow path may include a plurality of closed curves formed to be sequentially included in each of the refrigerant passages, and a connection line connecting the closed curves to the closed curves formed inward. The inlet may be connected to a closed curve located at the outermost side of the closed curves, and the outlet may be configured to be connected to a closed curve located at the innermost position of the closed curves. And the inlet is preferably formed on the gate side formed in the chamber. In addition, the closed curve may be formed in a square.

Meanwhile, the refrigerant passage may be configured to form a spiral shape.

The present invention also has a gate for entering and exiting the substrate on one side, is installed in the chamber is formed in the processing space for the vacuum treatment therein is an electrode to which power is applied to form a plasma in the processing space, the refrigerant passage and And an inlet for supplying a refrigerant into the refrigerant passage, and an outlet for discharging the refrigerant from the refrigerant passage, wherein the refrigerant passage first passes through one of the two sides of the electrode adjacent to the gate based on the gate. Disclosed is an electrode for a vacuum processing apparatus, characterized in that it is formed to pass through another bisection.

The refrigerant passage may be formed closer to the edge portion than to the center portion of the electrode.

The present invention also discloses a vacuum processing apparatus provided with an electrode having the above configuration.

Hereinafter, with reference to the accompanying drawings, a vacuum processing apparatus electrode and a vacuum processing apparatus having the same according to the present invention will be described in detail.

As shown in FIG. 2, the vacuum processing apparatus according to the present invention includes a chamber 100 having a processing space S formed therein, an upper electrode 210 installed at an upper side of the chamber 100, and a chamber ( It is configured to include a lower electrode 220 is installed on the lower side inside the power supply is applied to the upper electrode 210 in the processing space (S) to form a plasma.

The chamber 100 may be configured as an upper housing 110 and a lower housing 120 that is detachably coupled to the upper housing 110 to form a processing space S for a treatment process. At this time, it is preferable that the sealing member 130 is installed between the upper housing 110 and the lower housing 120 so that the processing space S is sealed.

In addition, a gas injection pipe 111 connected to a gas supply system is connected to and installed at an upper side of the upper housing 110 so that a processing gas and a reaction gas for forming a plasma can be supplied into the processing space S. An exhaust pipe 121 is installed at an inner lower side of the housing 120 so as to be connected to a vacuum pump installed on the outside for pressure control and exhaust in the processing space S.

In addition, a gate 123 is formed at one side of the upper housing 110 or the lower housing 120 to allow the substrate 1 to be vacuumed to enter and exit, and the gate 123 is formed by a gate valve (not shown). It is opened and closed.

The upper electrode 210 may be electrically connected by an external power source (not shown) and a power connection line (not shown), or may be electrically connected to an inner wall of the upper housing 110 and grounded. In addition, the upper electrode 210 may constitute a shower head in which a plurality of inlet holes 210a are formed so that gases introduced through the gas injection pipe 111 may be injected into the processing space S.

Meanwhile, the lower electrode 220 constitutes a part of the substrate support 200 which is supported and installed by the one or more support members 250 in the lower side of the lower housing 120, and the substrate support 200 is performed. It may be configured in various ways depending on the treatment process.

For example, the substrate support 200 includes an insulating member 201 installed on a base plate 202 which is supported by a plurality of support members 250 on a bottom surface of the lower housing 120, and an upper electrode. And a lower electrode 220 installed on the insulating member 201 to generate a plasma reaction together with the 210, and an electrostatic chuck 240 mounted on the lower electrode 220 to adsorb and fix the substrate 1. Can be.

As shown in FIG. 2, the lower electrode 220 is manufactured in a flat plate shape by a conductive member such as aluminum or an alloy thereof, and is connected by an external power source 222 and a power connection line 221 to be a DC power source or an RF power source. Is authorized.

In addition, in order to prevent the temperature of the lower electrode 220 from being increased by the plasma continuously formed in the processing space S, as shown in FIG. An inlet 320 for supplying a coolant into the 310 and a discharge port 330 through which the coolant is discharged from the coolant flow passage 310 are formed.

The inlet 320 and the outlet 330 are connected to the refrigerant control device 340 and the connection pipe 350 for supplying and circulating flow of the refrigerant, respectively. At this time, the refrigerant may be water, water containing ethylene glycol, fluorine-based solvents and the like.

Meanwhile, as shown in FIG. 1A, the lower electrode 220 has a relatively high temperature at an edge portion and a portion adjacent to the gate 123, so that the refrigerant passage 310 and the inlet 320 are formed. And the outlet 330 may be disposed to be further cooled at the edge of the lower electrode 220 and the gate 123.

3 and 6, the inlet 320 is formed at the edge of the lower electrode 220 and the outlet 330 is formed at the center of the lower electrode 220, or in FIG. As shown in the drawing, the refrigerant passage 310 is formed to pass through one of the two surfaces of the lower electrode 220 adjacent to the gate 123 based on the gate 123 and then pass through the other two surfaces. The coolant passage 310, the inlet 320, and the outlet 330 may be configured in various patterns.

For example, as shown in FIG. 3, the refrigerant flow passage 310 sequentially connects the plurality of closed curves 311 formed to be included therein and the closed curves 311 and the closed curves 311 formed therein. It may be configured to include a connecting line 312.

Here, the closed curve 311 may form a circular shape as well as a polygonal shape such as a quadrangle, and the connection lines 312 connecting the closed curves 311 may have a gate 123 from the inside, as shown in FIG. 3. It may be formed while facing each other based on.

In this case, the inlet 320 is connected to the closed curve 311 located at the outermost side and the portion adjacent to the gate 123, and the outlet 330 is connected to the closed curve 311 located at the innermost side of the closed curves 311. do. In this case, the outlet 330 is preferably formed at a part deviated from the central portion so that the cooling passage 310 is not formed in the central portion of the lower electrode 220.

By the above configuration, the refrigerant flows in through the inlet 320 formed at the portion adjacent to the gate 123 and circulates first along the closed curve 311 of the edge portion, and then sequentially inside the connection line 312. It flows into the formed closed curve 311 and circulates and is discharged through the outlet 330 connected to the innermost closed curve 311.

Therefore, the refrigerant circulates first through the edges of the lower electrode 220 and then sequentially circulates to the center. The lower electrode 220 is disposed at the edge portion where the refrigerant is circulated first, particularly at the portion adjacent to the gate 123. More cooling may take place and the temperature distribution may be constant.

Meanwhile, as shown in FIG. 6, the refrigerant flow passage 310 forms an inlet 320 at the edge of the lower electrode 220 and the outlet 330 at the central portion thereof, and then starts the inlet 320. The spiral portion may be configured to connect the outlet 330 formed in the center portion at the edge of the lower electrode 220.

Even when the coolant flow path 310 is formed in a spiral shape, the coolant circulates first through the edges of the lower electrode 220 and then sequentially circulates to the center, so that the coolant is circulated first. More cooling is done at the edges, especially at the portion adjacent to the gate 123, resulting in a constant temperature distribution.

In addition, as shown in FIG. 7, the refrigerant flow passage 310 passes through one of the two surfaces of the lower electrode 220 adjacent to the gate 123 based on the gate 123. It may be formed to pass through.

In this case, the coolant channel 310 may be formed in various shapes such as a zigzag shape, and the coolant channel 310 may be formed only at a portion excluding the center portion of the lower electrode 220.

The coolant flow path 310 as described above may be formed closer to the edge portion than the center portion of the lower electrode 220 between the adjacent coolant flow paths 310, and adjacent to the gate 123 adjacent to the gate 123. The distance between the refrigerant passages 310 may be formed closer to each other.

Meanwhile, the refrigerant flow passage 310 as described above may be formed by various processing methods according to the structure of the lower electrode 220, and the side surface of the lower electrode 220 is drilled in a lattice shape using a drill or the like. It can be formed by blocking a portion of the perforated portion.

Hereinafter, a method for forming the refrigerant passage 310 shown in FIG. 3 will be described with reference to FIGS. 4A to 5. Of course, the refrigerant passages shown in FIGS. 6 and 7 may be formed in a manner similar to that described below.

First, a plurality of holes 410 are drilled to form a lattice in accordance with the refrigerant passage 310 shown in FIG. 3 using a drill on the side of the flat plate constituting the lower electrode 220.

And at the end of each of the perforated holes 410, as shown in Figure 4b, in order to block the leakage of the refrigerant to form a female threaded portion 411 at the end of the screw in the O-ring 413 is interposed 412 is combined. In this case, as another method for blocking leakage of the refrigerant, ends of the holes 410 may be sealed by a sealing member, or a member for sealing may be further coupled to an outer surface of the lower electrode 220.

Meanwhile, some of the gratings formed by the holes 410 need to be blocked to form a closed curve 311 constituting the coolant flow path 310 shown in FIG. 3, as shown in FIGS. 3 and 4C. The portion to be blocked in the lower electrode 220 may be vertically punched to block the flow of the refrigerant by engaging the screw 415.

In addition, the inlet 320 and the outlet 330 are formed in the lower electrode 220 by perforating vertically from the bottom of the lower electrode 220 to the hole 410, respectively, and then connecting the flanges 360 to the connecting pipe 350. ).

On the other hand, the upper electrode 210 is also an electrode installed in the vacuum processing apparatus, the configuration similar to the refrigerant passage 310, the inlet 320 and the outlet 330 formed in the lower electrode 220 may be applied.

The electrode for a vacuum processing apparatus according to the present invention can perform a good treatment process by forming the inlet of the refrigerant at the edge portion and the outlet at the center portion to reduce the temperature deviation formed in the electrode to uniform the temperature distribution of the electrode. There is an advantage to that.

In addition, the electrode for a vacuum processing apparatus according to the present invention by flowing the refrigerant in a portion adjacent to the gate to prevent the temperature rises relatively high in the portion adjacent to the gate to reduce the temperature deviation to uniformly distribute the temperature of the electrode By doing so, there is an advantage in that a good treatment process can be performed.

Although the preferred embodiments of the present invention have been described above by way of example, the scope of the present invention is not limited to these specific embodiments, and may be appropriately changed within the scope described in the claims.

Claims (10)

A gate is formed in one side of the substrate for the entrance and exit of the substrate, the electrode is installed in the chamber is formed in the processing chamber for performing a processing process therein is a power applied to form a plasma in the processing space, A refrigerant passage, an inlet for supplying a refrigerant into the refrigerant passage, and an outlet for discharging the refrigerant from the refrigerant passage, The inlet is formed at the edge of the electrode so that the refrigerant flowing through the refrigerant passage first through the edge of the electrode and then flows to the center of the electrode, the outlet is formed in the center of the electrode An electrode for vacuum processing apparatus. The method of claim 1, The refrigerant passage And a plurality of closed curves formed to be sequentially included therein, respectively, and a connecting line connecting the closed curves to the closed curves formed therein, respectively. The method of claim 2, The inlet is connected to the closed curve located on the outermost of the closed curves, the discharge port electrode for a vacuum processing apparatus, characterized in that connected to the closed curve located on the innermost of the closed curves. The method of claim 3, wherein And the inlet is formed at the gate side formed in the chamber. The method according to any one of claims 2 to 4, The closed curve is a electrode for a vacuum processing apparatus, characterized in that the rectangular. The method of claim 1, The refrigerant flow path electrode for a vacuum processing apparatus, characterized in that forming a spiral. A gate is formed at one side of the gate for entering and exiting the substrate, and is installed in a chamber in which a processing space for vacuum processing is formed, and an electrode to which power is applied to form a plasma in the processing space. A refrigerant passage, an inlet for supplying a refrigerant into the refrigerant passage, and an outlet for discharging the refrigerant from the refrigerant passage, The coolant flow path is formed to pass through the other half surface of the electrode bilaterally adjacent to the gate, and then through the other half surface of the bipolar surface of the electrode with respect to the gate, so that the refrigerant flowing through the refrigerant flowpath is adjacent to the gate. First, the electrode for a vacuum processing apparatus, characterized in that configured to pass through. The method according to any one of claims 1 to 4 and 7, And the coolant flow path is formed closer to the adjacent coolant flow path at an edge portion than the center portion of the electrode. A vacuum processing apparatus provided with an electrode according to any one of claims 1 to 4. The method of claim 9, The electrode is a vacuum processing apparatus, characterized in that at least any one of the lower electrode provided on the inside of the lower chamber and the upper electrode provided on the inside of the chamber.

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