KR100824273B1 - Metal coated with ceramic and manufacturing method thereof - Google Patents

Metal coated with ceramic and manufacturing method thereof Download PDF

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KR100824273B1
KR100824273B1 KR1020060114001A KR20060114001A KR100824273B1 KR 100824273 B1 KR100824273 B1 KR 100824273B1 KR 1020060114001 A KR1020060114001 A KR 1020060114001A KR 20060114001 A KR20060114001 A KR 20060114001A KR 100824273 B1 KR100824273 B1 KR 100824273B1
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coating
sic
metal
coated
ceramic
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KR1020060114001A
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Korean (ko)
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김정일
우창현
김배석
김성균
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주식회사 티씨케이
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1283Control of temperature, e.g. gradual temperature increase, modulation of temperature

Abstract

A metal having ceramic coated on a surface thereof is provided to coat pure SiC on any metal irrespective of its melting point and prevent generation of defects such as exfoliation due to a difference in thermal expansion coefficients, and a method for manufacturing the metal having ceramic coated on a surface thereof is provided. A method for manufacturing a metal having ceramic coated on a surface thereof comprises: a step(S11) of dissolving an SiC precursor into a solvent to prepare a coating solution; a step(S12) of coating the prepared coating solution on a surface of a buffer layer which is formed on a surface of a metallic material, and has a thermal expansion coefficient between thermal expansion coefficient of the metallic material and thermal expansion coefficient of SiC by a room temperature coating process; a step(S13) of drying the metallic material coated with the coating solution to form an SiC precursor coating layer on the surface of the metallic material; and a step(S14) of converting the SiC precursor coating layer into an SiC coating layer through heat treatment.

Description

표면에 세라믹이 코팅된 금속 및 그 제조방법{Metal coated with ceramic and manufacturing method thereof}Metal coated with ceramic and surface and manufacturing method thereof

도 1은 본 발명 표면에 세라믹이 코팅된 금속 제조방법의 일실시예에 따른 순서도이다.1 is a flow chart according to one embodiment of a method for manufacturing a metal coated with a ceramic on the surface of the present invention.

도 2는 본 발명 표면에 세라믹이 코팅된 금속 제조방법의 다른 실시예에 따른 순서도이다. 2 is a flow chart according to another embodiment of the method for producing a metal coated with a ceramic on the surface of the present invention.

본 발명은 표면에 세라믹이 코팅된 금속 및 그 제조방법에 관한 것으로, 특히 금속 고유의 특성이 열화되지 않게하기 위하여 표면에 세라믹이 코팅된 금속 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal coated with a ceramic and a method of manufacturing the same, and more particularly, to a metal coated with a ceramic and a method of manufacturing the same in order to prevent deterioration of inherent characteristics of the metal.

일반적으로, SiC는 내화학, 내산화, 내열성, 내마모성이 우수한 세라믹 재료이다. 종래에는 이러한 SiC를 용사 코팅이나 화학기상증착(CVD)법으로 금속에 코팅하여 금속의 내화학성, 내산화성, 내열성 및 내마모성을 향상시키려는 시도가 있었다.In general, SiC is a ceramic material having excellent chemical, oxidation, heat resistance, and abrasion resistance. Conventionally, attempts have been made to improve the chemical resistance, oxidation resistance, heat resistance and abrasion resistance of the metal by coating such SiC on the metal by thermal spraying or chemical vapor deposition (CVD).

그러나, 용사 코팅의 경우 순수한 SiC로 코팅할 수 없었고, SiC를 포함하는 혼합물을 코팅하였다. 또한, 화학기상증착법은 고온을 사용하기 때문에 SiC를 용융점이 낮은 금속에는 코팅할 수 없었다.However, the spray coating could not be coated with pure SiC, and the mixture containing SiC was coated. In addition, since the chemical vapor deposition method uses a high temperature, SiC could not be coated on a metal having a low melting point.

즉, 1000℃ 이상의 공정온도를 사용하는 화학기상증착법으로 금속의 표면에 SiC를 증착하는 과정에서 용융점이 낮은 금속은 그 금속이 용융되는 등의 문제가 발생할 수 있다.That is, a metal having a low melting point in the process of depositing SiC on the surface of the metal by chemical vapor deposition using a process temperature of 1000 ° C. or more may cause problems such as melting of the metal.

또한 용융점이 높은 금속에 SiC를 화학기상증착법에 의해 증착하는 경우에도, 열팽창계수의 차이 등에 의해 코팅층에 균열이 발생하거나 코팅층이 박리되는 문제점이 있었다.In addition, even when SiC is deposited on a metal having a high melting point by chemical vapor deposition, there is a problem in that a crack occurs in the coating layer or the coating layer is peeled off due to a difference in thermal expansion coefficient.

상기와 같은 문제점을 감안한 본 발명은 용융점에 관계없이 모든 금속에 순수 SiC를 코팅할 수 있으며, 열팽창계수 차이에 의한 박리 등의 발생을 방지할 수 있는 표면에 세라믹이 코팅된 금속 및 그 제조방법을 제공함에 그 목적이 있다.The present invention in consideration of the above problems can be coated with pure SiC on all metals irrespective of the melting point, and the metal is coated with a ceramic coating on the surface that can prevent the occurrence of peeling due to the difference in thermal expansion coefficient The purpose is to provide.

상기와 같은 목적을 달성하기 위한 본 발명 세라믹이 표면에 코팅된 금속 제조방법은 a) SiC 전구체를 용매에 용해시켜 코팅용액을 준비하는 단계와, b) 상기 a) 단계에서 준비된 코팅용액을 금속재료의 표면에 상온 코팅법으로 코팅하는 단계와, c) 상기 코팅용액이 코팅된 금속재료를 건조시켜 금속재료의 표면에 SiC 전구체 코팅층을 형성하는 단계와, d) 열처리를 통해 상기 SiC 코팅층을 SiC 코팅층으로 전환시키는 단계를 포함한다.Method for producing a metal coated on the surface of the ceramic of the present invention for achieving the above object is a) preparing a coating solution by dissolving a SiC precursor in a solvent, and b) a metal material of the coating solution prepared in step a) Coating the surface of the room temperature coating method, c) drying the coating solution-coated metal material to form a SiC precursor coating layer on the surface of the metal material, and d) SiC coating the SiC coating layer through heat treatment. And converting to.

또한 본 발명 표면에 세라믹이 코팅된 금속은 a) SiC 전구체를 용매에 용해시켜 코팅용액을 준비하는 단계와, b) 상기 a) 단계에서 준비된 코팅용액을 금속재료의 표면에 상온 코팅법으로 코팅하는 단계와, c) 상기 코팅용액이 코팅된 금속재료를 건조시켜 금속재료의 표면에 PCS 코팅층을 형성하는 단계와, d) 열처리를 통해 상기 PCS 코팅층을 SiC 코팅층으로 전환시키는 단계로 제조될 수 있다.In addition, the metal coated with a ceramic on the surface of the present invention is a) preparing a coating solution by dissolving a SiC precursor in a solvent, and b) coating the coating solution prepared in step a) with a room temperature coating method on the surface of the metal material. And c) drying the coating solution-coated metal material to form a PCS coating layer on the surface of the metal material, and d) converting the PCS coating layer into a SiC coating layer through heat treatment.

이하, 첨부된 도면을 참조하여 본 발명에 따른 바람직한 실시예를 상세하게 설명하기로 한다. 그러나 이하의 실시예는 이 기술 분야에서 통상적인 지식을 가진 자에게 본 발명이 충분히 이해되도록 제공되는 것으로서 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 다음에 기술되는 실시예에 의해 한정되는 것은 아니다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the following embodiments are provided to those skilled in the art to fully understand the present invention, and may be modified in various forms, and the scope of the present invention is limited by the embodiments described below. It doesn't happen.

<실시예 1><Example 1>

도 1은 본 발명 표면에 세라믹이 코팅된 금속 제조방법의 바람직한 실시예에 따른 순서도이다.1 is a flow chart according to a preferred embodiment of the method for producing a metal coated with a ceramic on the surface of the present invention.

도 1을 참조하면, 본 발명 표면에 세라믹이 코팅된 금속 제조방법은 용매에 SiC 전구체 물질을 용해시켜 코팅용액을 준비하는 단계(S11)와, 상기 코팅용액을 금속의 표면에 코팅하는 단계(S12)와, S12단계의 결과물을 건조시키켜 SiC 전구체 코팅층을 형성하는 단계(S13)와, 열처리를 통해 상기 금속의 표면에 코팅된 SiC 전구체 코팅층을 SiC로 전환하는 단계(S14)를 포함한다.Referring to FIG. 1, in the method of manufacturing a metal coated with a ceramic on the surface of the present invention, preparing a coating solution by dissolving a SiC precursor material in a solvent (S11), and coating the coating solution on a surface of a metal (S12). And drying the resultant of step S12 to form a SiC precursor coating layer (S13), and converting the SiC precursor coating layer coated on the surface of the metal into SiC through heat treatment (S14).

이하, 상기와 같이 구성된 본 발명 표면에 세라믹이 코팅된 금속 제조방법의 바람직한 실시 예를 보다 상세히 설명한다.Hereinafter, a preferred embodiment of the method for producing a metal coated with a ceramic on the surface of the present invention configured as described above will be described in more detail.

먼저, S11단계에서는 SiC 전구체 물질을 용매에 녹여 코팅용액을 획득한다.First, in step S11 to dissolve the SiC precursor material in a solvent to obtain a coating solution.

이때, SiC 전구체 물질은 PCS(Polycarbosilane)를 사용할 수 있으며, 그 PCS를 용해시키는 용매는 헥산(Hexane), 크실란(Xylane), 톨루엔(Toluene), 테트라-하이드로퓨론(Tetra-hydrofuron)을 사용할 수 있다.In this case, the SiC precursor material may use polycarbosilane (PCS), and the solvent for dissolving the PCS may use hexane, hexane, xylane, toluene, or tetra-hydrofuron. have.

상기 열거한 용매에 용해되는 PCS의 양을 조절하여 코팅용액의 점도를 조절할 수 있으며, 이때 코팅용액의 점도는 금속의 표면에 코팅되는 SiC 코팅층의 두께와 관계가 있다. 즉, 용액의 점도가 높을수록 SiC 코팅층의 두께를 더 두껍게 코팅할 수 있다.The viscosity of the coating solution can be adjusted by adjusting the amount of PCS dissolved in the solvents listed above, wherein the viscosity of the coating solution is related to the thickness of the SiC coating layer coated on the surface of the metal. That is, the higher the viscosity of the solution, the thicker the coating of the SiC coating layer.

그 다음, S12단계에서는 상기 PCS가 용매에 용해된 코팅용액을 이용하여 코팅층을 형성할 금속의 표면을 코팅한다.Next, in step S12, the PCS coats the surface of the metal to form a coating layer by using a coating solution dissolved in a solvent.

이때, 코팅용액의 코팅방법은 열을 사용하지 않는 것으로, 코팅용액에 금속재료를 담그는 디핑법(dipping), 금속재료를 회전시키고, 그 상부에 상기 코팅용액을 낙하시켜 원심력에 의해 균일한 정도로 퍼지게 하는 스핀코팅법(spin coating), 분사장치를 이용하여 코팅용액을 분사하는 분사코팅법(spray coating)을 사용할 수 있다.At this time, the coating method of the coating solution does not use heat, dipping (dipping) to immerse the metal material in the coating solution, rotating the metal material, and drop the coating solution on the top to spread to a uniform degree by centrifugal force The spin coating method (spin coating), spray coating method for spraying the coating solution using a spray device can be used.

상기 열거한 코팅법들은 고온을 사용하지 않는 코팅법의 예들이며, 상기에서 열거하지는 않았지만 다른 고온을 사용하지 않는 코팅법을 사용할 수 있다. The coating methods listed above are examples of coating methods that do not use a high temperature, and coating methods that do not use other high temperatures, although not listed above, may be used.

이처럼 본 발명에서는 기존의 금속재료에 직접 SiC를 코팅하기 위한 고온의 열을 사용하는 화학기상증착법을 사용하지 않고, SiC 전구체 물질인 PCS를 상온의 분위기에서 코팅함으로써 금속재료의 용융점에 관계없는 코팅이 가능하게 된다.As such, the present invention does not use a chemical vapor deposition method using high temperature heat to directly coat SiC on an existing metal material, and the coating is irrelevant to the melting point of the metal material by coating the SiC precursor material PCS in an ambient temperature atmosphere. It becomes possible.

그 다음, S13단계에서는 상기 금속재료에 코팅된 코팅용액을 건조시킨다.Next, in step S13, the coating solution coated on the metal material is dried.

이때의 건조방법은 대기 건조나 불활성가스 분위기 또는 진공분위기에서 건조할 수 있다.At this time, the drying method may be dried in an atmosphere, an inert gas atmosphere or a vacuum atmosphere.

상기 건조과정에 의해 용매가 건조되어 상기 금속재료의 표면에는 PCS 코팅층이 형성된다.The solvent is dried by the drying process to form a PCS coating layer on the surface of the metal material.

그 다음, S14단계에서는 상기 형성된 PCS 코팅층을 열처리하여, PCS의 폴리머 성분을 제거하여 PCS 코팅층을 SiC 코팅층으로 전환시킨다.Next, in step S14, the formed PCS coating layer is heat-treated to remove the polymer component of the PCS, thereby converting the PCS coating layer to the SiC coating layer.

이때, 전환되는 SiC 코팅층의 표면에 포말이 생기지 않도록 하기 위해서는 승온속도를 조절하여야 한다.At this time, in order to prevent foam on the surface of the SiC coating layer to be converted, it is necessary to adjust the temperature increase rate.

가장 적당한 승온속도는 5~30℃/hr의 낮은 승온속도를 가지게 하며, 최종 온도는 약 700~1500℃가 되도록 함이 적당하다.The most suitable temperature increase rate is to have a low temperature increase rate of 5 ~ 30 ℃ / hr, it is appropriate that the final temperature is about 700 ~ 1500 ℃.

이때 최종 열처리 온도를 조절하여 원하는 결정구조의 SiC 코팅층을 획득할 수 있다. 즉, 1000~1500℃의 열처리에 의해 상기 SiC 코팅층의 결정구조는 결정질이 되며, 700~1000℃의 열처리에 의해서는 비정질의 SiC 코팅층을 획득할 수 있게 된다.At this time, the final heat treatment temperature may be adjusted to obtain a SiC coating layer having a desired crystal structure. That is, the crystal structure of the SiC coating layer becomes crystalline by heat treatment at 1000 to 1500 ° C., and the amorphous SiC coating layer can be obtained by heat treatment at 700 to 1000 ° C. FIG.

<실시예 2><Example 2>

도 2는 본 발명 표면에 세라믹이 코팅된 금속 제조방법의 다른 실시예에 따른 순서도이다.2 is a flow chart according to another embodiment of the method for producing a metal coated with a ceramic on the surface of the present invention.

도 2를 참조하면, 본 발명 표면에 세라믹이 코팅된 금속 제조방법은 용매에 SiC 전구체 물질을 용해시키켜 코팅용액을 준비하는 단계(S21)와, 금속재료의 표면에 버퍼층을 형성하는 단계(S22)와, 상기 코팅용액을 상기 금속재료 표면에 형성된 버퍼층의 표면에 코팅하는 단계(S23)와, 상기 버퍼층에 코팅된 코팅용액을 건조시켜 SiC 전구체 코팅층을 형성하는 단계(S24)와, 열처리를 통해 상기 금속의 표면에 코팅된 SiC 전구체 물질에서 경화하여, SiC로 전환하는 단계(S25)를 포함한다.2, in the method of manufacturing a metal coated with a ceramic on the surface of the present invention, preparing a coating solution by dissolving a SiC precursor material in a solvent (S21) and forming a buffer layer on the surface of the metal material (S22). ), And coating the coating solution on the surface of the buffer layer formed on the surface of the metal material (S23), drying the coating solution coated on the buffer layer to form a SiC precursor coating layer (S24), and through heat treatment Curing from the SiC precursor material coated on the surface of the metal, converting to SiC (S25).

이하, 상기와 같이 구성된 본 발명 세라믹이 표면에 코팅된 금속 제조방법의 다른 실시예를 보다 상세히 설명한다.Hereinafter, another embodiment of the metal manufacturing method coated on the surface of the ceramic of the present invention configured as described above will be described in more detail.

먼저, S21단계에서는 SiC 전구체 물질인 PCS를 용매에 녹여 코팅용액을 획득한다. 이때, 용매는 헥산(Hexane), 크실란(Xylane), 톨루엔(Toluene), 테트라-하이드로퓨론(Tetra-hydrofuron)등을 사용할 수 있다.First, in step S21 to obtain a coating solution by dissolving the PCC, a SiC precursor material in a solvent. In this case, hexane (Hexane), xylan (Xylane), toluene (Toluene), tetra-hydrofuron (Tetra-hydrofuron) may be used.

상기 용매의 조건은 건조과정을 통해 제거될 수 있으며, 금속재료 또는 PCS 자체 화학적인 영향을 주지 않는 것이면 위의 열거한 용매 이외의 용매를 사용할 수 있다.The solvent may be removed through a drying process, and solvents other than the solvents listed above may be used as long as they do not have a chemical effect on metal materials or PCS itself.

상기와 같은 용매에 용해되는 분말 또는 액상의 PCS의 양을 조절하여, 코팅용액의 점도를 조절할 수 있으며, 그 코팅용액의 점도가 클수록 더 두꺼운 SiC 코팅층을 형성할 수 있음은 위의 실시예 1에서 설명한 바와 같다.By adjusting the amount of powder or liquid PCS dissolved in the solvent as described above, the viscosity of the coating solution can be adjusted, the higher the viscosity of the coating solution can form a thicker SiC coating layer in Example 1 above As described.

그 다음, S22단계에서는 상기 코팅용액의 준비와는 별도로 금속재료의 표면에 버퍼층을 형성한다.Then, in step S22 to form a buffer layer on the surface of the metal material separately from the preparation of the coating solution.

상기 버퍼층은 금속재료와 SiC가 가지는 열팽창계수 등을 고려하여 그 중간의 열팽창계수를 가지는 물질층일 수 있으며, 그 예로는 알루미나를 예로 들 수 있다.The buffer layer may be a material layer having a thermal expansion coefficient in the middle in consideration of a thermal expansion coefficient of the metal material and SiC, and the like may be alumina.

상기 알루미나 버퍼층을 도입함으로써, 최종적인 열처리 과정에서 SiC 코팅층과 금속재료의 열팽창계수의 차이에 의한 SiC 코팅층의 박리 또는 균열이 발생하 는 것을 방지할 수 있게 된다.By introducing the alumina buffer layer, it is possible to prevent the separation or cracking of the SiC coating layer due to the difference in the thermal expansion coefficient of the SiC coating layer and the metal material in the final heat treatment process.

그 다음, S23단계에서는 상기 PCS가 용매에 용해된 코팅용액을 이용하여 코팅층을 형성할 금속재료의 표면에 형성된 알루미나 코팅층의 표면을 코팅한다.Next, in step S23, the PCS coats the surface of the alumina coating layer formed on the surface of the metal material to form the coating layer using the coating solution dissolved in the solvent.

이때, 코팅용액의 코팅방법은 열을 사용하지 않는 코팅법이면, 그 코팅법에 무관하게 사용할 수 있다.At this time, if the coating method of the coating solution is a coating method that does not use heat, it can be used irrespective of the coating method.

그 코팅법을 예로 들면 디핑법(dipping), 스핀코팅법(spin coating), 분사코팅법(spray coating)을 사용할 수 있다.As the coating method, for example, a dipping method, a spin coating method or a spray coating method can be used.

그 다음, S24단계에서는 상기 알루미나 버퍼층의 상부에 코팅된 코팅용액을 건조시킨다.Then, in step S24 is dried coating solution coated on the alumina buffer layer.

이때의 건조방법은 대기 건조나 불활성가스 분위기 또는 진공분위기에서 건조할 수 있다.At this time, the drying method may be dried in an atmosphere, an inert gas atmosphere or a vacuum atmosphere.

상기 건조과정에서 대기 건조 등으로 산소가 코팅용액에 포함되면 SiC 코팅층의 고온특성이 저하될 수 있다.When oxygen is included in the coating solution by air drying in the drying process, the high temperature characteristics of the SiC coating layer may be reduced.

상기 건조과정에 의해 용매가 건조되어 상기 금속재료의 표면에 형성된 알루미나 버퍼층의 표면에는 PCS 코팅층이 형성된다.The solvent is dried by the drying process to form a PCS coating layer on the surface of the alumina buffer layer formed on the surface of the metal material.

그 다음, S25단계에서는 상기 형성된 PCS 코팅층을 열처리하여, PCS의 폴리머 성분을 증발시켜 PCS 코팅층을 SiC 코팅층으로 전환시킨다.Next, in step S25, the formed PCS coating layer is heat-treated to convert the PCS coating layer into a SiC coating layer by evaporating the polymer component of the PCS.

이때, 전환되는 SiC 코팅층의 표면에 포말이 생기지 않도록 하기 위해서는 5~30℃/hr의 낮은 승온속도를 가지게 하는 것이 바람직하며, 이때 최종 열처리 온도에 따라 비정절 또는 결정질의 SiC 코팅층을 획득할 수 있다. In this case, in order to prevent foam from occurring on the surface of the converted SiC coating layer, it is preferable to have a low temperature increase rate of 5 to 30 ° C./hr, and at this time, an amorphous or crystalline SiC coating layer may be obtained. .

즉, 1000℃ 이상의 열처리에 의해 상기 SiC 코팅층의 결정구조는 결정질이되며, 1000℃ 이하의 열처리에 의해서는 비정질의 SiC 코팅층을 획득할 수 있게 된다. That is, the crystal structure of the SiC coating layer becomes crystalline by heat treatment at 1000 ° C. or higher, and the amorphous SiC coating layer can be obtained by heat treatment at 1000 ° C. or lower.

상기와 같은 열처리 과정에서 상기 알루미나 버퍼층은 열팽창계수에 차이가 있는 금속재료와 SiC 코팅층의 박리 또는 균열발생을 방지하는 역할을 하게 된다.In the heat treatment process as described above, the alumina buffer layer serves to prevent the peeling or cracking of the metal material and SiC coating layer having a difference in the coefficient of thermal expansion.

이와 같이 순수한 SiC 코팅층이 표면에 코팅된 금속재료는 그 금속재료 본연의 특성을 발휘할 수 있음과 아울러 SiC 코팅층에 의하여 내화학, 내산화, 내열성 및 내마모성이 뛰어난 특성을 가지게 된다.As described above, the metal material coated on the surface of the pure SiC coating layer can exhibit the original characteristics of the metal material and has excellent chemical, oxidation, heat resistance, and abrasion resistance by the SiC coating layer.

이상에서는 본 발명을 특정의 바람직한 실시 예들을 들어 도시하고 설명하였으나, 본 발명은 상기한 실시 예들에 한정되지 않으며 본 발명의 개념을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 다양한 변경과 수정이 가능하다.The present invention has been shown and described with reference to certain preferred embodiments, but the present invention is not limited to the above-described embodiments and has ordinary skill in the art to which the present invention pertains without departing from the concept of the present invention. Various changes and modifications are possible by the user.

상기한 바와 같이 본 발명 표면에 세라믹이 코팅된 금속 제조방법은 금속재 료의 표면에 균열 및 박리가 발생하지 않는 순수한 SiC 코팅층을 형성할 수 있게 되어 금속재료의 내산화성, 내화학성, 내열성 및 내마모성을 향상시키는 효과가 있다.As described above, the method of manufacturing a metal coated with a ceramic on the surface of the present invention enables the formation of a pure SiC coating layer that does not cause cracking and peeling on the surface of the metal material, thereby providing oxidation resistance, chemical resistance, heat resistance, and abrasion resistance of the metal material. It is effective to improve.

또한, 본 발명 표면에 세라믹이 코팅된 금속은 금속재료 본연의 특성을 그대로 발휘할 수 있음과 아울러 내산화성, 내화학성, 내열성 및 내마모성을 향상시켜 보다 다양한 응용분야에 금속재료를 이용할 수 있는 효과가 있다. In addition, the metal coated with the ceramic on the surface of the present invention can exhibit the inherent characteristics of the metal material as well as improve the oxidation resistance, chemical resistance, heat resistance, and abrasion resistance, so that the metal material can be used in various applications. .

Claims (9)

a) SiC 전구체를 용매에 용해시켜 코팅용액을 준비하는 단계;a) dissolving a SiC precursor in a solvent to prepare a coating solution; b) 상기 a) 단계에서 준비된 코팅용액을 금속재료의 표면에 그 금속재료의 열팽창계수와 SiC의 열팽창계수의 사이의 열팽창계수 값을 가지는 버퍼층의 표면에 상온 코팅법으로 코팅하는 단계;b) coating the coating solution prepared in step a) on the surface of the metal material by a normal temperature coating method on the surface of the buffer layer having a thermal expansion coefficient value between the thermal expansion coefficient of the metal material and the thermal expansion coefficient of SiC; c) 상기 코팅용액이 코팅된 금속재료를 건조시켜 금속재료의 표면에 SiC 전구체 코팅층을 형성하는 단계; 및c) drying the metal material coated with the coating solution to form a SiC precursor coating layer on the surface of the metal material; And d) 열처리를 통해 상기 SiC 전구체 코팅층을 SiC 코팅층으로 전환시키는 단계를 포함하는 표면에 세라믹이 코팅된 금속 제조방법.d) converting the SiC precursor coating layer into a SiC coating layer through heat treatment; 제1항에 있어서,The method of claim 1, 상기 a) 단계의 SiC 전구체는 PCS(Polycarbosilane)인 것을 특징으로 하는 표면에 세라믹이 코팅된 금속 제조방법.The method of manufacturing a metal coated with a ceramic on the surface, characterized in that the SiC precursor of step a) is polycarbosilane (PCS). 삭제delete 제1항에 있어서, The method of claim 1, 상기 버퍼층은 알루미나인 것을 특징으로 하는 표면에 세라믹이 코팅된 금속 제조방법.The buffer layer is alumina, characterized in that the ceramic coating on the surface of the metal manufacturing method. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2, 상기 a) 단계의 용매는 헥산(Hexane), 크실란(Xylane), 톨루엔(Toluene) 또는 테트라-하이드로퓨론(Tetra-hydrofuron)인 것을 특징으로 하는 표면에 세라믹이 코팅된 금속 제조방법.The solvent of step a) is hexane (Hexane), xylan (Xylane), toluene (Toluene) or tetra-hydrofuron (Tetra-hydrofuron) characterized in that the ceramic-coated metal manufacturing method on the surface. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2, 상기 b) 단계의 코팅법은 디핑법(dipping), 스핀코팅법(spin coating) 또는 분사코팅법(spray coating)인 것을 특징으로 하는 표면에 세라믹이 코팅된 금속 제조방법.The coating method of step b) is a dipping method, a spin coating method, a spin coating method or a spray coating method, characterized in that the ceramic coated metal on the surface. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2, 상기 d) 단계는 시간당 5 내지 30℃인 승온속도로 승온하여 최종온도가 700 내지 1500℃가 될 때까지 승온하는 것을 특징으로 하는 표면에 세라믹이 코팅된 금속 제조방법.The step d) is a method for producing a ceramic-coated metal, characterized in that the temperature is raised to a temperature increase rate of 5 to 30 ℃ per hour until the final temperature is 700 to 1500 ℃. 제7항에 있어서,The method of claim 7, wherein 상기 최종온도의 조절에 의해 SiC 코팅층의 결정구조를 결정하는 것을 특징 으로 하는 표면에 세라믹이 코팅된 금속 제조방법. The method of manufacturing a metal coated with a ceramic, characterized in that for determining the crystal structure of the SiC coating layer by controlling the final temperature. 삭제delete
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Publication number Priority date Publication date Assignee Title
KR101100042B1 (en) * 2009-10-16 2011-12-29 주식회사 티씨케이 Suceptor for LED and manufacturing method thereof

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Publication number Priority date Publication date Assignee Title
JPH10218996A (en) * 1997-02-05 1998-08-18 Nippon Telegr & Teleph Corp <Ntt> Polycarbosilane and production of thin silicon carbide film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10218996A (en) * 1997-02-05 1998-08-18 Nippon Telegr & Teleph Corp <Ntt> Polycarbosilane and production of thin silicon carbide film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100042B1 (en) * 2009-10-16 2011-12-29 주식회사 티씨케이 Suceptor for LED and manufacturing method thereof

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