KR100824084B1 - Method for manufacturing x-ray detector - Google Patents

Abstract

The present invention relates to a method of manufacturing an X-ray detector, the method comprising: forming a gate and a data pad on a transparent insulating substrate; Forming a gate oxide film on the substrate and forming an active pattern; Forming a data line including a source / drain on the active pattern of Mo / Al / Mo or Mo / AlNd / Mo and simultaneously forming a ground line on a portion of the gate oxide film; Forming a first passivation layer on an entire surface of the substrate on which the source / drain and ground wirings are formed; Forming a first transparent electrode on the first protective film using ITO or IZO; forming a second protective film on the first protective film on which the first transparent electrode is formed; Forming a second transparent electrode on the second passivation layer using ITO or IZO; And selectively removing Mo of the second passivation layer and the data line such that Al or AlNd of the data line formed on the data pad is exposed, and existing X-rays are made by using aluminum or aluminum alloy as the source / drain. Compared to the detector manufacturing method, by reducing one mask process, process cost can be lowered and process yield can be improved.

Description

Manufacturing Method of X-ray Detector {METHOD FOR MANUFACTURING X-RAY DETECTOR}

1 is a view for explaining the structure and driving of a general X-ray detector.

Figure 2a to 2h is a cross-sectional view for each process for explaining the manufacturing method of the X-ray detector according to the present invention.

-Explanation of symbols for the main parts of the drawings-

100; Transparent insulating substrate 102; gate

103; Data pad 104; Gate oxide

106; Pure Amorphous Silicon Layer Pattern

108; Amorphous doped amorphous silicon layer pattern

109; Active pattern 110; Data line

110a, 110b; Source / drain 112; 1st shield

114; First contact hole 115; 2nd contact hole

116; Third contact hole 118; First transparent electrode

120; Second protective film 122; 4th contact hole

124; Second transparent electrode

The present invention relates to a method for manufacturing an x-ray detector, and more particularly, to a method for manufacturing an x-ray detector that can reduce the number of processes.

In general, the X-ray (X-ray) imaging method of the film printing method widely used for medical treatment has a disadvantage that it can recognize the result after a certain period of time because the printing process must be performed after film shooting. There have been many problems in the storage and preservation of the later film.

Conventionally, digital X-ray detectors (DXDs) using thin film transistor arrays have been researched and developed to compensate for these disadvantages.

The digital X-ray detector, as shown in FIG. 1, charges the insulating substrate 1, the capacitor 3 capable of charging the charge generated by the X-ray applied from the outside, and the capacitor. Thin film transistor (5: TFT) for transferring the charge to an external read out integrated circuit (not shown), and converting the X-ray into a charge that can be charged in the capacitor 3 The charge collecting electrode 9 (CCE), which collects charges generated by the light conversion unit 7, the light conversion unit 7, and the charges generated by the light conversion unit 7 are transferred to the capacitor 3. It consists of a high voltage direct current device (11) for applying a voltage, a conductive electrode (15) to which high pressure is applied from the high voltage direct current device (11), and a protective film (13).

The digital X-ray detector having the above structure operates as follows.

First, when the X-ray signal is applied from the outside, the electron-hole pair is formed in the light conversion unit. The electron-hole pairs thus formed are separated in each direction by the high-pressure direct current device and stored in the capacitor through the CCE. The charge stored in the capacitor is transferred to the integrated circuit unit by the TFT, and the integrated circuit unit converts the transferred charge into an image signal to display the X-ray photographing result.

As such, the X-ray detector can check the result immediately after the X-ray photographing using the TFT as a switching element, and the result is output as a digital signal, so it is easy to store and can be preserved semi-permanently. .

However, the X-ray detector according to the prior art has the following problems.

In the prior art, a gate forming step (step 1), an active pattern forming step (step 2), a contact hole forming step (step 3), a source / drain forming step (step 4), and a first passivation film forming step (step 5) X-rays through at least nine process steps, including the first transparent electrode forming step (step 6), the second protective film forming step (step 7), the second transparent electrode forming step (step 8), and the pad opening step (step 9). The detector was prepared. Therefore, there are problems in that the process cost is high and the yield is reduced as there are many process steps.

Accordingly, the present invention has been made to solve the problems of the prior art, an object of the present invention is to provide a method of manufacturing an X-ray detector that can reduce the number of processes by eliminating the step of forming a contact hole due to the change of the source / drain material. Is in.

According to an aspect of the present invention, there is provided a method of manufacturing an X-ray detector, the method including: forming a gate and a data pad on a transparent insulating substrate; Forming a gate oxide film on the substrate and forming an active pattern; Forming a data line including a source / drain on the active pattern of Mo / Al / Mo or Mo / AlNd / Mo and simultaneously forming a ground line on a portion of the gate oxide film; Forming a first passivation layer on an entire surface of the substrate on which the source / drain and ground wirings are formed; Forming a first transparent electrode on the first protective film using ITO or IZO; forming a second protective film on the first protective film on which the first transparent electrode is formed; Forming a second transparent electrode on the second passivation layer using ITO or IZO; And selectively removing Mo of the second passivation layer and the data line such that Al or AlNd of the data line formed on the data pad is exposed.

Hereinafter, a method of manufacturing the X-ray detector according to the present invention will be described in detail with reference to the accompanying drawings.

2A to 2H are cross-sectional views of processes for describing a method of manufacturing the X-ray detector according to the present invention.

In the method of manufacturing the X-ray detector according to the present invention, as shown in FIG. 2A, first, a transparent insulating substrate 100 such as glass is prepared, and a metal having good electrical conductivity on the upper surface of the substrate 100, eg For example, the gate 102 is formed of aluminum, an aluminum alloy (eg, AlNd), or the like. In this case, the data pad 103 is formed independently on a predetermined portion of the substrate 100, and although not shown in the drawing, a gate pad (not shown) is formed on the substrate 100.

Subsequently, as illustrated in FIG. 2B, a gate oxide film 104 is deposited on the upper surface of the substrate 100 including the gate 102 and the data pad 103 by SiNx or SiON, and subsequently, a pure amorphous silicon layer pattern. (106; a-Si) and the doped amorphous silicon layer pattern 108 (n + a-Si) are deposited to form an active pattern 109. In this case, the pure amorphous silicon layer pattern 106 is a thin film to serve as a channel layer, and the doped amorphous silicon layer pattern 108 is a thin film to serve as an ohmic contact layer.

Subsequently, as illustrated in FIG. 2C, the source / drain 110a and 110b are formed on the active pattern 109, and the ground wiring 111 is formed on a predetermined portion of the gate oxide film 104. In this case, the source / drain 110a and 110b form part of the data line 110, and may be formed of an aluminum alloy such as aluminum (Al) or AlNd, which is a metal having good electrical conductivity. Molybdenum (Mo) is formed above and below the aluminum alloy to protect the aluminum or the aluminum alloy.

When the source / drain 110a and 110b are formed of aluminum (Al), as in the embodiment of the present invention, the resistivity is relatively lower than that of the chromium (Cr) series. When the amount of charge stored in the storage capacitor is read, there is less charge loss, so a clearer image can be obtained.                     

Thereafter, as shown in FIG. 2D, a first passivation layer 112 is formed on the entire surface of the substrate 100 including the source / drain 110a and 110b and the ground wiring 111. In this case, the first passivation layer 112 may be selectively removed to expose the first contact hole 114 exposing a part of the surfaces of the source / drain 110a and 110b and the second surface exposing the ground wiring 111. The contact hole 115 is formed. In this case, a third contact hole 116 is formed in the first passivation layer 112 formed on the data pad 103 to expose a part of the surface of the data line 110.

Subsequently, as illustrated in FIG. 2E, a first transparent electrode 118 is formed on the first passivation layer 112 by ITO or IZO, and the first transparent electrode 118 is the first contact hole 114. Contact with the source / drain (110a) (110b) by a), and the ground wiring 111 by the second contact hole (115). On the other hand, the first transparent electrode 118 is in contact with the data line 110 by the third contact hole 116, in particular the source / drain (110a) (by the first contact hole 114) ( A portion of the first transparent electrode 118 in contact with 110b is in contact with the second transparent electrode 124 in a subsequent process to contact the source / drain 110a and 110b and the second transparent electrode 124. It serves as an electrode.

Next, as shown in FIG. 2F, a second passivation layer 120 is formed as a dielectric on the entire surface of the first passivation layer 112 on which the first transparent electrode 118 is formed. In this case, the second passivation layer 120 may be selectively removed to expose a portion of the first transparent electrode 118 that contacts the source / drain 110a and 110b by the first contact hole 114. The contact hole 122 is formed.

Subsequently, as illustrated in FIG. 2G, a second transparent electrode 124, which is a pixel electrode, is formed on the first passivation layer 120 including the fourth contact hole 122, thereby forming the ground wiring 111. The storage capacitance is formed by the first transparent electrode 118 and the second passivation layer 120 in contact with each other.

Next, as illustrated in FIG. 2H, a pad opening which selectively exposes the surface of the data line 110 as shown by reference numeral 26 by selectively removing the second passivation layer 112 formed on the data pad 103. In the open process, the molybdenum (Mo) portion of the upper portion of the data line 110 is removed to expose the aluminum or aluminum alloy portion. By using the above process steps, it is possible to simultaneously form a double pad of aluminum pad for wire bonding in the subsequent process and ITO or IZO pad for TAB bonding, and then to TAB bonding. If you change, you will be prepared together.

Subsequently, although not shown in the figure, a photosensitive material such as selenium (Se) is coated to form a light conversion unit, and a transparent conductive electrode is formed to transmit X-ray light on the upper surface of the light conversion unit. Continue with the scheduled follow-up process to complete the X-ray detector.

Various embodiments can be easily implemented as well as self-explanatory to those skilled in the art without departing from the principles and spirit of the present invention. Accordingly, the claims appended hereto are not limited to those already described above, and the following claims are intended to cover all of the novel and patented matters inherent in the present invention, and are generally available in the art to which the invention pertains. Includes all features that are treated equally by those with knowledge of

As described above, the X-ray detector according to the present invention has the following effects.

In the present invention, when manufacturing the X-ray detector, by using a source or drain aluminum or aluminum alloy, it is possible to reduce the process cost and improve the process yield by reducing one mask process compared to the conventional method of manufacturing the x-ray detector.

In addition, as the resistance of the data line decreases, a clearer X-ray image may be obtained, and the pads of the data pad portion may be formed in duplicate so that the Al pad (or AlNd pad) and the ITO pad (or IZO pads) Since two types of pads can be formed at the same time, there is an effect that can be prepared in case of changing to TAB bonding in the future.

Claims (2)

Forming a gate and a data pad on the transparent insulating substrate; Forming a gate oxide film on the substrate and forming an active pattern; Forming a data line including a source / drain on the active pattern of Mo / Al / Mo or Mo / AlNd / Mo and simultaneously forming a ground line on a portion of the gate oxide film; Forming a first passivation layer on an entire surface of the substrate on which the source / drain and ground wirings are formed; Forming a first transparent electrode on the first passivation layer using ITO or IZO: Forming a second passivation layer on the first passivation layer on which the first transparent electrode is formed; Forming a second transparent electrode on the second passivation layer using ITO or IZO; And And selectively removing Mo of the second passivation layer and the data line so that Al or AlNd of the data line formed on the data pad is exposed. The method of claim 1, The step of selectively removing the second passivation layer may include simultaneously forming an ITO pad or an IZO pad on the second passivation layer and an Al pad or AlNd pad on the data line at the same time. Way.

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