KR100810641B1 - Organic light emitting diode display - Google Patents

Abstract

An organic light emitting diode display is provided to prevent characteristic change due to damage of a semiconductor layer by plasma and UV treatment processes by protecting the semiconductor layer with first and second blocking films. An organic light emitting diode display includes a semiconductor layer(110), a gate electrode(130), a source and drain electrode(150), a first blocking film(155), a protection film(160), a pixel electrode(170a), an organic film layer(180), and an opposed electrode(190). The semiconductor layer includes source and drain regions(111a,111b) and a channel region on a substrate(100). The gate electrode is insulated with the semiconductor layer and overlapped with the channel region. The source and drain electrode is insulated with the gate electrode and connected to the source and drain regions. The first blocking film is formed on the same layer as the source and drain electrode and on a region between any one side of the source electrode and the drain electrode and a side of the gate electrode. The protection film is formed on the source and drain electrode. The pixel electrode is connected to the source and drain electrode through a via hole(171) formed on the protection film. The organic film layer is formed on the pixel electrode. The opposite electrode is formed on the organic film layer.

Description

Organic light emitting diode display

1 is a cross-sectional view illustrating a manufacturing process of an organic light emitting display device according to the prior art.

2A and 2B are cross-sectional views illustrating a manufacturing process of an organic light emitting display device according to a first embodiment of the present invention.

3 is a cross-sectional view illustrating part of a manufacturing process of another type of organic light emitting display device according to a second exemplary embodiment of the present invention.

 <Description of the symbols for the main parts of the drawings>

100: substrate 110: semiconductor layer

111a and 111b source / drain regions 120 gate insulating film

130: gate electrode 140: interlayer insulating film

150: source / drain electrode 155: first blocking film

170a: pixel electrode 170b: second blocking film

200: plasma, UV

The present invention relates to an organic light emitting display device, and more particularly, to a blocking film for protecting a semiconductor layer.

In general, an organic light emitting display device is a self-luminous display device that electrically excites a light emitting organic compound to emit light, and may be classified into a passive matrix method and an active matrix method according to a method of driving pixels arranged in a matrix form.

The active matrix type organic light emitting display device has a thin film transistor and is suitable for realizing a large area with less power consumption than the passive matrix type organic light emitting display device.

1 is a cross-sectional view illustrating a manufacturing process of an organic light emitting display device according to the prior art.

Referring to FIG. 1, a semiconductor layer 110 formed on a substrate 100, a gate insulating layer 120 formed on the semiconductor layer 110, and a gate insulating layer 120 are formed on the semiconductor layer 110. Through the gate electrode 130 overlapping the 110, the contact hole 151 penetrating through the interlayer insulating layer 140, the gate insulating layer 130, and the interlayer insulating layer 140 formed on the gate electrode 130. A thin film transistor including a source / drain electrode 150 connected to the source / drain regions 111a and 111b of the semiconductor layer 110, a passivation layer 160 formed on the thin film transistor, and the passivation layer 160. A pixel electrode 170a connected to any one of the source / drain electrodes 150 through the via hole 171 of the pixel electrode 170a, and a benzocyclobutene (BCB) on the passivation layer 160 on which the pixel electrode 170a is formed. , One pixel selected from the group consisting of acrylic polymer and polyimide The deposition layer 175 may be deposited, and the pixel defining layer 175 may have an opening for forming an organic layer (not shown).

After the pixel defining layer 175 is formed, a pretreatment process is performed to improve the characteristics and extend the life of the organic layer before depositing the organic layer (not shown). Treatment to remove the remaining organic matter after the etching process for forming the opening, and then to process the plasma 200 to increase the work function of the pixel electrode, to facilitate the hole injection of the organic film layer formed in a subsequent process The driving characteristics of the organic EL device can be improved.

However, the semiconductor layer 110 may be damaged through a region between one side of the source electrode 150 and the drain electrode 150 and the side surface of the gate electrode 130 during the plasma and UV 200 processing. There is a problem that the driving characteristics are reduced.

Accordingly, the present invention is to solve the above problems of the prior art, the purpose of forming a blocking film to protect the semiconductor layer to prevent the semiconductor layer damage by plasma and UV treatment that proceeds before forming the organic layer. .

The object of the present invention is a semiconductor layer comprising a source / drain region and a channel region on the substrate;

A gate electrode insulated from the semiconductor layer and overlapping the channel region;

A source / drain electrode insulated from the gate electrode and connected to the source / drain region;

A first barrier layer formed on the same layer as the source / drain electrode and formed in a region between one side of the source electrode and the drain electrode and the side surface of the gate electrode;

A protective film formed on the source / drain electrodes;

A pixel electrode connected to the source / drain electrode through a via hole formed in the passivation layer;

An organic layer formed on the pixel electrode; And

It is achieved by an organic light emitting display device comprising a counter electrode formed on the organic film layer.

In addition, the object of the present invention is a semiconductor layer comprising a source / drain region and a channel region on the substrate;

A gate electrode insulated from the semiconductor layer and overlapping the channel region;

A source / drain electrode insulated from the gate electrode and connected to the source / drain region;

A protective film formed on the source / drain electrodes;

A second blocking layer connected to the source / drain electrode through a via hole formed in the passivation layer and formed in an area between one side of a source electrode and a drain electrode and a side surface of the gate electrode;

An organic layer formed on the second blocking layer; And

It is also achieved by an organic electroluminescent display device comprising an opposing electrode formed on the organic film layer.

Details of the above objects and technical configurations and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

Example 1

2A and 2B are cross-sectional views illustrating a manufacturing process of an organic light emitting display device according to a first embodiment of the present invention.

First, referring to FIG. 2A, a buffer layer (not shown) may be formed on an insulating substrate 100 made of glass or plastic, and the buffer layer (not shown) may be formed of moisture or impurities generated in the substrate 100. By preventing diffusion or controlling heat transfer during crystallization, the semiconductor layer 110 plays a role of crystallization.

Next, amorphous silicon is formed on the buffer layer (not shown), and the amorphous silicon layer is preferably crystallized to form polycrystalline silicon.

In this case, the amorphous silicon may use a chemical vapor deposition method or a physical vapor deposition method, and when forming or after forming the amorphous silicon may be subjected to a process of lowering the hydrogen concentration by dehydrogenation treatment. Next, a gate insulating film 120 is formed on the upper surface of the substrate on which the semiconductor layer 110 is formed, and a gate electrode 130 having a predetermined pattern is formed on the gate insulating film 120 using MoW, Al / Cu, or the like. Next, a process of implanting impurity ions using the gate electrode 130 as a mask is performed to form source / drain regions 111a and 111b in the semiconductor layer 110. The insulating layer 140 is formed, and the interlayer insulating layer 140 serves to protect the elements formed under or serves for electrical insulation.

On the other hand, the buffer layer (not shown), the gate insulating film 120 and the interlayer insulating film 140 may be formed of SiO2 or SiNx, it may be made of a plurality of layers consisting of these.

Next, a contact hole 151 is formed through the interlayer insulating layer 140 and the gate insulating layer 120 to expose the source / drain regions 111a and 111b of the semiconductor layer. The contact hole 151 is formed on the interlayer insulating layer 120. A source / drain electrode 150 having a predetermined pattern connected to the contact hole 151 is formed.

In this case, a first blocking layer 155 having a predetermined pattern formed of a source / drain electrode material is formed on the same layer as the source / drain electrode 150, and the first blocking layer 155 is formed of the source electrode 150. And a region a between one side of the drain electrode 150 and the side of the gate electrode 130. The first blocking layer 155 may be a wiring of a data line transferring a data signal to the thin film transistor.

Next, a protective film 160 formed of SiO2 or SiNx and a plurality of layers thereof may be formed on the entire upper surface of the substrate, and a planarization film (not shown) may be provided to alleviate the step on the substrate. (Not shown) may be made of an organic material. The pixel electrode 170a is electrically connected to any one of the source / drain electrodes 150 through the via hole 171 passing through the passivation layer 160. In this case, the pixel electrode 170a is a transparent electrode made of indium tin oxide (ITO) or indium zinc oxide (IZO), or in the group consisting of Pt, Au, Ir, Cr, Mg, Ag, Al, and alloys thereof. It may be a reflective electrode made of one selected. A pixel defining layer 175 having an opening exposing a portion of the pixel electrode 170a is formed on the pixel electrode 170a. The pixel defining layer 175 is formed of benzocyclobutene (BCB), an acrylic polymer, and a poly. It may be one material selected from the group consisting of meads.

Next, referring to FIG. 2B, an organic layer 180 including an organic emission layer is formed on the pixel electrode 170a exposed through the opening, and then an opposite electrode 190 is formed on the entire upper surface of the organic layer 180. ) Forms.

After the pixel defining layer 175 is formed, a pretreatment process is performed to improve the characteristics and extend the life of the organic layer before depositing the organic layer (not shown). Treatment to remove the remaining organic matter after the etching process for forming the opening, and then to process the plasma 200 to increase the work function of the pixel electrode (170a), hole injection of the organic film layer formed in a subsequent process It is possible to improve the driving characteristics of the organic EL device.

In this case, the plasma and the UV 200 are blocked from flowing into the semiconductor layer 110 by the first blocking layer 155.

Example 2

3 is a cross-sectional view illustrating part of a manufacturing process of another type of organic light emitting display device according to a second exemplary embodiment of the present invention.

The second embodiment has the same configuration as the thin film transistor except for the first blocking film 155 in the first embodiment, and thus description thereof will be omitted to avoid duplication.

Referring to FIG. 3, a passivation layer 160 formed of SiO 2 or SiN x and a plurality of layers thereof may be formed on the entire upper surface of the thin film transistor, and a planarization layer (not shown) may be provided to reduce the step difference on the substrate. The planarization layer may be formed of an organic material. The via hole 171 penetrates the passivation layer 160, and is connected to any one of the source / drain electrodes 150, and at least one side surface of the source electrode 150 and the drain electrode 150. The second blocking layer 170b including the region a between the side surfaces of the gate electrode 130 is formed.

In this case, the second blocking layer 170b is a transparent electrode made of indium tin oxide (ITO) or indium zinc oxide (IZO) as a pixel electrode, or Pt, Au, Ir, Cr, Mg, Ag, Al, and alloys thereof. It may be a reflective electrode made of one selected from the group consisting of. A pixel defining layer 175 having an opening exposing a portion of the second blocking layer 170b is formed on the second blocking layer 170b. The pixel defining layer 175 is a benzocyclobutene (BCB) or an acrylic polymer. And it may be one material selected from the group consisting of polyimide. An organic layer (not shown) including an organic emission layer is formed on the second blocking layer 170b, and a counter electrode (not shown) is formed on the entire upper surface of the organic layer (not shown).

After the pixel defining layer 175 is formed, a pretreatment process is performed to improve the characteristics and extend the life of the organic layer before depositing the organic layer (not shown). Treatment to remove the remaining organic matter after the etching process for forming the opening, and then to process the plasma 200 to increase the work function of the pixel electrode, to facilitate the hole injection of the organic film layer formed in a subsequent process The driving characteristics of the organic EL device can be improved.

At this time, the plasma and the UV 200 are blocked from flowing into the semiconductor layer 110 by the second blocking film 170b.

Example 3

Referring to the first and second embodiments, the third embodiment further includes both the first blocking film 155 and the second blocking film 170b to further introduce plasma and UV 200 flowing into the semiconductor layer 110. You can also block it.

Although the present invention has been illustrated and described as described above, various changes and modifications may be made by those skilled in the art without departing from the spirit of the present invention.

Therefore, the organic electroluminescent display device of the present invention protects the semiconductor layer by the first blocking film and the second blocking film, thereby preventing the characteristic change due to the damage of the semiconductor layer generated by the plasma and UV treatment process performed before the organic film layer is formed. can do.

Claims (5)

A semiconductor layer comprising a source / drain region and a channel region on the substrate; A gate electrode insulated from the semiconductor layer and overlapping the channel region; A source / drain electrode insulated from the gate electrode and connected to the source / drain region; A first barrier layer formed on the same layer as the source / drain electrode and formed in a region between one side of the source electrode and the drain electrode and the side surface of the gate electrode; A protective film formed on the source / drain electrodes; A pixel electrode connected to the source / drain electrode through a via hole formed in the passivation layer; An organic layer formed on the pixel electrode; And And an opposite electrode formed on the organic layer. The method of claim 1, And the first blocking layer is formed of the source / drain electrode material. The method of claim 1, And the first blocking layer is a data line. A semiconductor layer comprising a source / drain region and a channel region on the substrate; A gate electrode insulated from the semiconductor layer and overlapping the channel region; A source / drain electrode insulated from the gate electrode and connected to the source / drain region; A protective film formed on the source / drain electrodes; A second blocking layer connected to the source / drain electrode through a via hole formed in the passivation layer and formed in an area between one side of a source electrode and a drain electrode and a side surface of the gate electrode; An organic layer formed on the second blocking layer; And And an opposite electrode formed on the organic layer. The method of claim 4, wherein The second blocking layer is a pixel electrode.

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