KR100801728B1 - Hard pellicle for improving the resolution - Google Patents

Hard pellicle for improving the resolution Download PDF

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KR100801728B1
KR100801728B1 KR1020050060601A KR20050060601A KR100801728B1 KR 100801728 B1 KR100801728 B1 KR 100801728B1 KR 1020050060601 A KR1020050060601 A KR 1020050060601A KR 20050060601 A KR20050060601 A KR 20050060601A KR 100801728 B1 KR100801728 B1 KR 100801728B1
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reticle
resolution
pellicle
transparent plate
present
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KR1020050060601A
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KR20070005324A (en
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공근규
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주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명의 분해능 향상을 위한 하드 펠리클(hard pellicle)은, 레티클의 일 표면위에서 레티클로부터 일정 간격 이격되도록 배치되며, 내부에 광굴절물질을 포함하는 투명판과, 그리고 이 투명판을 지지하도록 투명판과 레티클 사이에 배치되는 프레임을 구비한다. 이와 같은 본 발명에 따르면, 레티클을 통과하는 광의 파장을 감소시키고, 그 결과 원래 광원의 해상도를 증대시킴으로써 분해능을 향상시킬 수 있다.The hard pellicle for improving the resolution of the present invention is disposed on a surface of the reticle so as to be spaced apart from the reticle by a predetermined distance, and a transparent plate including a photorefractive material therein, and a transparent plate to support the transparent plate. And a frame disposed between and the reticle. According to the present invention, the resolution can be improved by reducing the wavelength of the light passing through the reticle, thereby increasing the resolution of the original light source.

레티클, 펠리클, 쿼츠, 해상도, 분해능 Reticle, pellicle, quartz, resolution, resolution

Description

분해능 향상을 위한 하드 펠리클{Hard pellicle for improving the resolution}Hard pellicle for improving the resolution

도 1은 레티클에 부착된 펠리클을 나타내 보인 평면도이다.1 is a plan view showing a pellicle attached to a reticle.

도 2는 레티클에 부착된 펠리클을 나타내 보인 단면도이다.2 is a cross-sectional view showing a pellicle attached to a reticle.

도 3은 도 2의 선 A-A'를 따라 절단하여 나타내 보인 종래의 소프트 펠리클을 나타내 보인 단면도이다.3 is a cross-sectional view showing a conventional soft pellicle shown by cutting along the line A-A 'of FIG.

도 4는 도 2의 선 A-A'를 따라 절단하여 나타내 보인 본 발명에 따른 하드 펠리클을 나타내 보인 단면도이다.4 is a cross-sectional view showing a hard pellicle according to the present invention shown by cutting along the line A-A 'of FIG.

본 발명은 반도체소자 제조설비에 관한 것으로서, 특히 분해능 향상을 위한 하드 펠리클(hard pellicle)에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing facility, and more particularly, to a hard pellicle for improving resolution.

도 1은 레티클에 부착된 펠리클을 나타내 보인 평면도이다. 그리고 도 2는 레티클에 부착된 펠리클을 나타내 보인 단면도이다.1 is a plan view showing a pellicle attached to a reticle. 2 is a cross-sectional view showing a pellicle attached to a reticle.

도 1 및 도 2를 참조하면, 통상적으로 펠리클(100)은 레티클(200) 위에 부착된다. 펠리클(100)이 부착되는 레티클(200) 표면에는 광차단패턴, 예컨대 크롬(Cr) 막패턴(미도시)이 배치된다. 이와 같은 펠리클(100)은 레티클(200) 표면을 대기중 분자나 다른 형태의 오염으로부터 보호해준다. 이와 같은 목적을 달성하기 위하여, 펠리클(100)은 투과율이 좋은 폴리머(polymer)를 이용하여 제작한다.1 and 2, the pellicle 100 is typically attached over the reticle 200. A light blocking pattern, for example, a chromium (Cr) film pattern (not shown), is disposed on the surface of the reticle 200 to which the pellicle 100 is attached. Such a pellicle 100 protects the surface of the reticle 200 from contamination of molecules or other forms in the atmosphere. In order to achieve this purpose, the pellicle 100 is manufactured using a polymer having good transmittance.

도 3은 도 2의 선 A-A'를 따라 절단하여 나타내 보인 종래의 소프트 펠리클을 나타내 보인 단면도이다.3 is a cross-sectional view showing a conventional soft pellicle shown by cutting along the line A-A 'of FIG.

도 3을 참조하면, 멤브레인(membrane)(110)이 전면에 배치되고, 이 멤브레인(110)은 프레임(frame)(130)에 의해 지지된다. 프레임(130)의 상부는 멤브레인접착제(120)에 의해 멤브레인(110)에 부착되고, 프레임(130)의 하부는 레티클접착제(140)에 의해 레티클(도 1 및 도 2의 200)에 부착된다. 이때 레티클접착제(140)와 레티클(200) 사이에는 라이너(150)가 배치된다.Referring to FIG. 3, a membrane 110 is disposed on the front surface, which is supported by a frame 130. The upper portion of the frame 130 is attached to the membrane 110 by the membrane adhesive 120, and the lower portion of the frame 130 is attached to the reticle (200 in FIGS. 1 and 2) by the reticle adhesive 140. At this time, the liner 150 is disposed between the reticle adhesive 140 and the reticle 200.

이와 같은 종래의 소프트 펠리클은, 폴리머를 얇게 제조하여 만들어지며, 따라서 충격에 매우 약하다는 단점을 갖는다. 또한 이 소프트 펠리클이 부착된 레티클을 이용하여 노광공정을 수행하는데 있어서, 분해능(resolution) 향상에 전혀 기여하지 못한다는 한계를 갖는다.Such conventional soft pellicles are made by making thin polymers, and therefore have the disadvantage of being very fragile. In addition, in performing the exposure process using this soft pellicle-attached reticle, there is a limit that it does not contribute to the resolution improvement at all.

본 발명이 이루고자 하는 기술적 과제는, 견고하면서도 분해능 향상에 기여할 수 있는 하드 펠리클을 제공하는 것이다.The technical problem to be achieved by the present invention is to provide a hard pellicle that can contribute to the improvement of resolution while being robust.

상기 기술적 과제를 달성하기 위하여, 본 발명에 따른 분해능 향상을 위한 하드 펠리클은, 레티클의 일 표면위에서 상기 레티클로부터 일정 간격 이격되도록 배치되며, 내부에 광굴절물질을 포함하는 투명판; 및 상기 투명판을 지지하도록 상기 투명판과 상기 레티클 사이에 배치되는 프레임을 구비하는 것을 특징으로 한다.In order to achieve the above technical problem, the hard pellicle for improving the resolution according to the present invention is disposed on a surface of the reticle spaced apart from the reticle at a predetermined interval, the transparent plate including a photorefractive material therein; And a frame disposed between the transparent plate and the reticle to support the transparent plate.

상기 투명판은 쿼츠 재질로 이루어질 수 있다.The transparent plate may be made of a quartz material.

상기 광굴절물질은 공기의 굴절율보다 상대적으로 큰 굴절율을 갖는 물질인 것이 바람직하다.The photorefractive material is preferably a material having a refractive index relatively larger than the refractive index of air.

상기 광굴절물질은 물을 포함할 수 있다.The photorefractive material may include water.

상기 광굴절물질은 폴리에테르를 포함할 수도 있다.The photorefractive material may include polyether.

이하 첨부 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 그러나, 본 발명의 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상술하는 실시예들로 인해 한정되어지는 것으로 해석되어져서는 안된다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below.

도 4는 도 2의 선 A-A'를 따라 절단하여 나타내 보인 본 발명에 따른 하드 펠리클을 나타내 보인 단면도이다.4 is a cross-sectional view showing a hard pellicle according to the present invention shown by cutting along the line A-A 'of FIG.

도 4를 참조하면, 본 발명에 따른 하드 펠리클은, 투명판(410)이 전면에 배치되고, 이 투명판(410)은 프레임(430)에 의해 지지된다. 투명판(410)은, 광투과율이 실질적으로 100%인 재질, 예컨대 투명한 쿼츠 재질로 이루어질 수 있으며, 경우에 따라서는 다른 투명한 재질로 이루어질 수도 있다. 투명판(410) 내부에는 광굴절물질(415)이 배치된다. 광굴절물질(415)은 공기의 광굴절율보다 큰 굴절율을 갖는 물질이다. 예컨대 이와 같은 광굴절물질(415)로는 물을 사용할 수 있으며, 또는 폴리에테르를 사용할 수도 있다.Referring to FIG. 4, in the hard pellicle according to the present invention, the transparent plate 410 is disposed on the front surface, and the transparent plate 410 is supported by the frame 430. The transparent plate 410 may be made of a material having a light transmittance of substantially 100%, for example, a transparent quartz material, and in some cases, may be made of another transparent material. The photorefractive material 415 is disposed in the transparent plate 410. The photorefractive material 415 is a material having a refractive index larger than that of air. For example, water may be used as the photorefractive material 415 or polyether may be used.

프레임(430)의 상부는 제1 접착제(420)에 의해 투명판(410)에 부착되고, 프레임(430)의 하부는 레티클접착제(440)에 의해 레티클(도 1 및 도 2의 200)에 부착된다. 이때 레티클접착제(440)와 레티클(400) 사이에는 라이너(450)가 배치된다.The upper part of the frame 430 is attached to the transparent plate 410 by the first adhesive 420, and the lower part of the frame 430 is attached to the reticle (200 of FIGS. 1 and 2) by the reticle adhesive 440. do. At this time, the liner 450 is disposed between the reticle adhesive 440 and the reticle 400.

이와 같은 구조의 하드 펠리클을, 도 1 및 도 2에 예시한 바와 같이, 레티클(도 1 및 도 2의 200)에 부착시키면, 기존의 효과, 즉 레티클(200) 표면을 대기중 분자나 다른 형태의 오염으로부터 보호해주는 효과 외에도, 노광시 분해능을 향상시킨다는 효과도 함께 제공한다. 구체적으로 레티클(200)의 표면 중 펠리클이 부착된 면의 반대면으로 입사한 광은 레티클(200)을 거쳐 펠리클을 통과해서 웨이퍼상의 포토레지스트막에 입사된다. 이때 레티클(200)을 통과한 광은 펠리클의 투명판(410) 내의 광굴절물질(415)을 통과하면서 굴절율이 증가한 상태로 포토레지스트막에 입사된다. 통상적으로 노광공정에 있어서의 해상도는 아래의 수학식 1과 같이 나타낼 수 있다.As shown in FIGS. 1 and 2, the hard pellicle having such a structure is attached to a reticle (200 of FIGS. 1 and 2), and the existing effect, that is, the surface of the reticle 200 is changed to molecules or other forms in the atmosphere. In addition to protecting against contamination, it also provides an effect of improving resolution during exposure. Specifically, light incident on the opposite surface of the surface of the reticle 200 to which the pellicle is attached passes through the pellicle through the reticle 200 and is incident on the photoresist film on the wafer. At this time, the light passing through the reticle 200 is incident on the photoresist film with the refractive index increased while passing through the light refractive material 415 in the transparent plate 410 of the pellicle. In general, the resolution in the exposure process may be expressed by Equation 1 below.

Figure 112005036506492-pat00001
Figure 112005036506492-pat00001

상기 수학식 1에서, R은 해상도를, K1은 상수를, λ는 파장을, n은 굴절율을, 그리고 NA는 개구수(Numerical Aperture)를 각각 나타낸다.In Equation 1, R represents a resolution, K1 represents a constant, λ represents a wavelength, n represents a refractive index, and NA represents a numerical aperture.

상기 수학식 1에 나타낸 바와 같이, 광의 굴절율을 증가시키면, 노광렌즈의 크기인 개구수(NA)를 증가시키거나, 파장을 짧게 하는 효과를 나타내며, 이에 따라 레티클을 통한 1차광을 렌즈내에 더 많이 넣을 수 있으므로 해상도가 증가한다. 예컨대 아르곤 플로라이드용 노광원은 193nm의 파장을 갖지만, 본 발명에 따라 내부 에 물을 포함하는 투명판으로 이루어진 하드 펠리클을 통과하도록 하면, 133nm의 파장을 갖는 효과를 나타내며, 따라서 보다 작은 선폭의 패턴을 해상할 수 있다.As shown in Equation 1, increasing the refractive index of the light increases the numerical aperture NA, which is the size of the exposure lens, or shortens the wavelength, thereby increasing the primary light through the reticle in the lens. As you can put in, the resolution increases. For example, an exposure source for argon fluoride has a wavelength of 193 nm, but according to the present invention, when it passes through a hard pellicle made of a transparent plate containing water therein, it has an effect of having a wavelength of 133 nm, and thus a pattern having a smaller line width. Can be resolved.

지금까지 설명한 바와 같이, 본 발명에 따른 하드 펠리클에 따르면, 기존의 멤브레인 대신에 쿼츠 재질의 투명판을 사용하고, 그 내부에 물과 같은 광굴절물질을 포함함으로써, 레티클을 통과하는 광의 파장을 감소시키고, 그 결과 원래 광원의 해상도를 증대시킴으로써 분해능을 향상시킬 수 있다는 이점이 제공된다.As described so far, according to the hard pellicle according to the present invention, by using a quartz transparent plate instead of a conventional membrane and including a photorefractive material such as water therein, the wavelength of light passing through the reticle is reduced And, as a result, the resolution can be improved by increasing the resolution of the original light source.

이상 본 발명을 바람직한 실시예를 들어 상세하게 설명하였으나, 본 발명은 상기 실시예에 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의하여 여러 가지 변형이 가능함은 당연하다.Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the technical spirit of the present invention. Do.

Claims (5)

레티클의 일 표면위에서 상기 레티클로부터 일정 간격 이격되도록 배치되며, 내부에 공기의 굴절율보다 상대적으로 큰 굴절율을 갖는 광굴절물질을 포함하는 투명판; 및A transparent plate disposed on one surface of the reticle so as to be spaced apart from the reticle and having a light refractive material having a refractive index relatively larger than that of air; And 상기 투명판을 지지하도록 상기 투명판과 상기 레티클 사이에 배치되는 프레임을 구비하는 것을 특징으로 하는 하드 펠리클.And a frame disposed between the transparent plate and the reticle to support the transparent plate. 제1항에 있어서,The method of claim 1, 상기 투명판은 쿼츠 재질로 이루어진 것을 특징으로 하는 하드 펠리클.The transparent plate is a hard pellicle, characterized in that made of a quartz material. 삭제delete 제1항에 있어서,The method of claim 1, 상기 광굴절물질은 물을 포함하는 것을 특징으로 하는 하드 펠리클.The photorefractive material is hard pellicle, characterized in that containing water. 제1항에 있어서,The method of claim 1, 상기 광굴절물질은 폴리에테르를 포함하는 것을 특징으로 하는 하드 펠리클.The photorefractive material hard pellicle, characterized in that it comprises a polyether.
KR1020050060601A 2005-07-06 2005-07-06 Hard pellicle for improving the resolution KR100801728B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04237055A (en) * 1991-01-21 1992-08-25 Mitsui Petrochem Ind Ltd Pellicle structural body
JPH06230560A (en) * 1993-01-29 1994-08-19 Asahi Chem Ind Co Ltd Pellicle
KR20040094396A (en) * 2001-12-07 2004-11-09 에스케이에프 인더스트리에 에스.피.에이. Screw actuator module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04237055A (en) * 1991-01-21 1992-08-25 Mitsui Petrochem Ind Ltd Pellicle structural body
JPH06230560A (en) * 1993-01-29 1994-08-19 Asahi Chem Ind Co Ltd Pellicle
KR20040094396A (en) * 2001-12-07 2004-11-09 에스케이에프 인더스트리에 에스.피.에이. Screw actuator module

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