KR100800865B1 - Method for cleaning a deposition chamber - Google Patents

Method for cleaning a deposition chamber Download PDF

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KR100800865B1
KR100800865B1 KR1020060134513A KR20060134513A KR100800865B1 KR 100800865 B1 KR100800865 B1 KR 100800865B1 KR 1020060134513 A KR1020060134513 A KR 1020060134513A KR 20060134513 A KR20060134513 A KR 20060134513A KR 100800865 B1 KR100800865 B1 KR 100800865B1
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South Korea
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chamber
deposition
film
cleaning
depositing
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KR1020060134513A
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Korean (ko)
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최승철
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동부일렉트로닉스 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Abstract

A method for cleaning a deposition chamber is provided to prevent generation of flaws due to the particles, thereby improve yield by depositing protection films with different qualities onto an inner part of the deposition chamber, thereby reducing the cleaning time and preventing particles from adhered onto the backside of a wafer at the same time. In a method for cleaning an inner part of a chamber for performing a deposition process, a method for cleaning a deposition chamber comprises: a step(S10) of flowing a cleaning gas into the chamber to remove a film deposited onto the inner part of the chamber; a step(S20) of exhausting non-reaction cleaning gas and by-products within the chamber to the outside to remove the non-reaction cleaning gas and the by-products; and a step(S30) of supplying a reaction gas into the chamber to form a plurality of protection films with different qualities on the inner part of the chamber by deposition. The step of depositing the plurality of protection films with different qualities comprises: a step(S31) of depositing a porous protection film onto the inner part of the chamber; and a step(S32) of supplying a reaction gas into the chamber to deposit a hard protection film onto the inner part of the chamber.

Description

증착 챔버의 클리닝 방법{METHOD FOR CLEANING A DEPOSITION CHAMBER}METHOD FOR CLEANING A DEPOSITION CHAMBER}

도 1은 종래의 기술에 따른 증착 챔버의 클리닝 방법을 도시한 흐름도이고,1 is a flow chart illustrating a cleaning method of a deposition chamber according to the prior art,

도 2는 본 발명에 따른 증착 챔버의 클리닝 방법을 도시한 흐름도이고,2 is a flowchart illustrating a cleaning method of a deposition chamber according to the present invention;

도 3은 본 발명에 따른 증착 챔버를 도시한 단면도이다.3 is a cross-sectional view illustrating a deposition chamber according to the present invention.

< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>

10 : 챔버 11 : 정전기척10 chamber 11: electrostatic chuck

12 : 압력조절밸브 13 : 공급구12 pressure control valve 13 supply port

14 : 배기구14: exhaust port

본 발명은 증착 챔버의 클리닝 방법에 관한 것으로서, 보다 상세하게는 증착챔버 내부에 상이한 막질의 보호용 필름을 증착시킴으로써 클리닝에 소요되는 시간을 단축시킴과 아울러 웨이퍼의 백사이드에 파티클이 부착되는 것을 방지하는 증착 챔버의 클리닝 방법에 관한 것이다.The present invention relates to a method of cleaning a deposition chamber, and more particularly, to reduce the time required for cleaning by depositing a protective film of different film quality inside the deposition chamber and to prevent particles from adhering to the backside of the wafer. It relates to a cleaning method of the chamber.

일반적으로, 반도체 소자는 노광공정, 확산공정, 식각공정, 화학기상증착공정 등 다양한 단위공정을 실시함으로써 제조된다. In general, semiconductor devices are manufactured by performing various unit processes such as an exposure process, a diffusion process, an etching process, and a chemical vapor deposition process.

이러한 반도체 소자의 제조공정중 증착공정은 챔버내에서 프로세스가스와의 반응을 통해서 웨이퍼에 필름을 증착시키는데, 이러한 과정에서 필름이 웨이퍼 이외의 챔버 내부에 증착된다. 따라서, 증착공정을 진행시 챔버 내부에 증착된 필름이 웨이퍼에 떨어져서 파티클로 인한 결함을 유발시키는데, 이를 방지하기 위하여 주기적으로 챔버 내부의 클리닝 공정이 수행된다. The deposition process in the manufacturing process of such a semiconductor device deposits a film on a wafer through reaction with a process gas in the chamber, in which the film is deposited inside the chamber other than the wafer. Therefore, during the deposition process, the film deposited inside the chamber falls on the wafer to cause defects due to particles. To prevent this, the cleaning process inside the chamber is periodically performed.

종래의 기술에 따른 증착 챔버의 클리닝 방법을 첨부된 도면을 참조하여 설명하면 다음과 같다. Referring to the accompanying drawings, the cleaning method of the deposition chamber according to the prior art is as follows.

도 1은 종래의 기술에 따른 증착 챔버의 클리닝 방법을 도시한 흐름도이다. 도시된 바와 같이, 종래의 기술에 따른 증착 챔버의 클리닝 방법은 챔버 내부의 필름 제거단계(S1)와, 챔버 내부의 미반응 가스 및 부산물 제거단계(S2)와, 챔버 내부에 보호용 필름 증착단계(S3)를 포함한다.1 is a flowchart illustrating a cleaning method of a deposition chamber according to the related art. As shown, the cleaning method of the deposition chamber according to the prior art is a film removing step (S1) in the chamber, the unreacted gas and by-products removing step (S2) in the chamber, and a protective film deposition step (in the chamber) S3).

챔버 내부의 필름 제거단계(S1)는 챔버 내부로 클리닝가스를 플로우(flow)하여 챔버 내부에 부착된 필름을 제거하게 된다.In the film removing step S1 in the chamber, the cleaning gas flows into the chamber to remove the film attached to the chamber.

챔버 내부의 미반응 가스 및 부산물 제거단계(S2)는 챔버 내부로 공급된 클리닝가스중 미반응 가스와 부산물을 외부로 배출시킴으로써 제거하게 된다.Unreacted gas and by-product removal step (S2) in the chamber is removed by discharging the unreacted gas and by-products of the cleaning gas supplied into the chamber to the outside.

챔버 내부에 보호용 필름 증착단계(S3)는 시즈닝(seasoning) 과정이라고도 하며, 이 단계(S3)는 챔버 내부로 반응가스를 공급하여 가스반응을 통해 보통 SiO2 성분의 보호용 필름을 증착하는데 이 과정의 조건이 클리닝 공정의 시간 및 파티클로 인한 문제 발생 여부에 결정적인 역할을 한다. The protective film deposition step (S3) inside the chamber is also called a seasoning (seasoning) process, this step (S3) is to supply a reaction gas into the chamber to deposit a protective film of the SiO 2 component usually through a gas reaction of this process The conditions play a decisive role in the time of the cleaning process and whether or not the problem is caused by particles.

이와 같은 종래의 증착 챔버의 클리닝 방법은 챔버 내부에 열제거 및 웨이퍼 고정을 위하여 사용되는 정전기척에 보호용 필름이 증착시 다음과 같은 문제점을 유발시킨다.Such a cleaning method of the conventional deposition chamber causes the following problems when the protective film is deposited on the electrostatic chuck used for heat removal and wafer fixing inside the chamber.

첫째, 챔버 내부에 보호용 필름 증착단계(S3)에서 시즈닝 공정이 부족한 경우 클리닝후 부산물을 완전하게 제거시키지 못해 파티클로 인한 결함 유발 및 정전기척의 손상을 유발시킨다. 특히, HDP CVD(High Density Plasma Chemical Vapor Deposition: 고밀도플라즈마화학증착)공정중 식각공정의 영향으로 일정량의 보호막이 형성되지 않을 경우 정전기척에 심각한 손상을 발생시키는 문제점을 가지고 있었다.First, when the seasoning process is insufficient in the protective film deposition step (S3) inside the chamber, by-products are not completely removed after cleaning, causing defects due to particles and damage to the electrostatic chuck. In particular, the HDP CVD (High Density Plasma Chemical Vapor Deposition) process had a problem of serious damage to the electrostatic chuck when a certain amount of the protective film is not formed by the effect of the etching process.

둘째, 시즈닝 공정이 충분하더라도, 보호용 필름의 막질이 포러스(porous)한 경우 정전기척에 증착된 보호용 필름이 클리닝공정 후 첫번째 웨이퍼의 백사이드(back-side)에 묻어 아래 슬롯의 웨이퍼에 떨어져서 파티클로 인한 결함을 발생시킬 뿐만 아니라 보호용 필름이 보호막으로서의 역할을 수행하지 못하며, 보호용 필름의 막질이 하드한 경우 클리닝 시간을 증가시키는 문제점을 가지고 있었다. Second, even if the seasoning process is sufficient, if the protective film is porous, the protective film deposited on the electrostatic chuck will be buried in the back-side of the first wafer after the cleaning process and fall to the wafer in the lower slot, In addition to the generation of defects, the protective film does not play a role as a protective film, and if the film quality of the protective film had a problem of increasing the cleaning time.

본 발명은 상술한 종래의 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 증착챔버 내부에 상이한 막질의 보호용 필름을 증착시킴으로써 클리닝에 소요되는 시간을 단축시킴과 아울러 웨이퍼의 백사이드에 파티클이 부착되는 것을 방지하여 파티클로 인한 결함 발생을 방지하여 수율을 향상시키는 증착 챔버의 클리닝 방법을 제공하는데 있다. SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to reduce the time required for cleaning by depositing a protective film of different film quality inside the deposition chamber and to attach particles to the backside of the wafer. It is to provide a cleaning method of the deposition chamber to prevent the occurrence of defects caused by particles to improve the yield.

이와 같은 목적을 실현하기 위한 본 발명은, 증착공정을 실시하는 챔버 내부를 클리닝하는 방법에 있어서, 챔버 내부로 클리닝가스를 플로우하여 챔버 내부에 증착된 필름을 제거하는 단계와, 챔버 내부의 미반응 클리닝가스와 부산물을 외부로 배출시켜서 제거하는 단계와, 챔버 내부에 반응가스를 공급하여 챔버 내부에 막질이 상이한 다수의 보호용 필름을 증착에 의해 형성하는 단계를 포함하는 것을 특징으로 한다.According to an aspect of the present invention, there is provided a method of cleaning an interior of a chamber in which a deposition process is performed, the method comprising: removing a film deposited in the chamber by flowing a cleaning gas into the chamber; And removing the cleaning gas and the by-products to the outside, and supplying a reaction gas into the chamber to form a plurality of protective films having different films in the chamber by vapor deposition.

이하, 본 발명의 가장 바람직한 실시예를 첨부한 도면을 참조하여 본 발명의 기술분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 더욱 상세히 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

도 2는 본 발명에 따른 증착 챔버의 클리닝 방법을 도시한 흐름도이고, 도 3은 본 발명에 따른 증착 챔버를 도시한 단면도이다. 도시된 바와 같이, 본 발명에 따른 증착 챔버의 클리닝 방법은 챔버 내부의 필름 제거단계(S10)와, 챔버 내부의 미반응가스 및 부산물 제거단계(S20)와, 챔버 내부에 막질이 상이한 다수의 보호용 필름 증착단계(S30)를 포함한다.2 is a flowchart illustrating a cleaning method of a deposition chamber according to the present invention, and FIG. 3 is a cross-sectional view of the deposition chamber according to the present invention. As shown, the cleaning method of the deposition chamber according to the present invention is a film removing step (S10) in the chamber, the unreacted gas and by-products removing step (S20) in the chamber, and a plurality of different film quality in the chamber It includes a film deposition step (S30).

챔버 내부의 필름 제거단계(S10)는 챔버(10) 내부에 클리닝가스를 플로우(flow)시켜서 챔버(10) 내부에 증착공정으로 인해 부착된 필름을 제거한다.In the film removing step S10 in the chamber, a cleaning gas flows in the chamber 10 to remove the film attached to the chamber 10 due to the deposition process.

챔버 내부의 미반응가스 및 부산물 제거단계(S20)는 챔버(10) 내부로 공급된 클리닝가스중 미반응 가스와 부산물을 배기구(14)를 통해서 외부로 배출시킴으로써 제거한다.Unreacted gas and by-products removing step (S20) inside the chamber is removed by discharging the unreacted gas and by-products of the cleaning gas supplied into the chamber 10 to the outside through the exhaust port (14).

챔버 내부에 막질이 상이한 다수의 보호용 필름 증착단계(S30)는 챔버(10) 내부에 반응가스를 공급하여 챔버(10) 내부에 막질이 상이한 다수의 보호용 필름(f1,f2)을 증착에 의해 적층 형성한다. In the deposition of the plurality of protective films (S30) having different films in the chamber (S30), a plurality of protective films (f1, f2) having different films are deposited in the chamber (10) by supplying a reaction gas into the chamber (10). Form.

막질이 상이한 다수의 보호용 필름을 증착시키는 단계(S30)는 챔버(10)의 배기구(14)에 설치되어 압력을 변화시키는 압력조절밸브(12)의 제어, 즉 압력조절밸브(12)의 스텝을 시간에 따라 가변시킴으로써 증착되는 보호용 필름(f1,f2)의 막질에 대한 특성을 조절할 수 있다. Depositing a plurality of protective films of different film quality (S30) is installed in the exhaust port 14 of the chamber 10 to control the pressure control valve 12 to change the pressure, that is, the step of the pressure control valve 12 By varying with time, properties of the film quality of the protective films f1 and f2 deposited can be adjusted.

압력조절밸브(12)의 스텝이 증가되면 압력이 낮아지므로 시간이 지남에 따라 압력조절밸브(12)의 스텝을 증가시키면 증착되는 보호용 필름(f1,f2)의 막질은 챔버(10) 내부, 구체적으로는 정전기척(11)의 윗면으로 갈수록 포러스(porous)한 막질에서 하드(hard)한 막질을 구현할 수 있다.When the step of the pressure control valve 12 is increased, the pressure is lowered. Therefore, the film quality of the protective films f1 and f2 deposited as the step of the pressure control valve 12 is increased as time passes increases in the chamber 10. As the upper surface of the electrostatic chuck 11 can be implemented a hard film quality from the porous (porous) film quality.

막질이 상이한 다수의 보호용 필름을 증착시키는 단계(S30)는 챔버(10) 내부에 포러스한 막질의 보호용 필름(f1)을 증착시키는 단계(S31)와, 챔버(10) 내부에 하드한 막질의 보호용 필름(f2)을 증착시키는 단계(S32)를 포함한다.Depositing a plurality of protective films of different film quality (S30) is a step (S31) of depositing a porous film of protective film f1 inside the chamber 10, and for protecting the hard film quality inside the chamber 10 And depositing the film f2 (S32).

포러스한 막질의 보호용 필름을 증착시키는 단계(S31)는 증착시 압력이 40 내지 60mTorr, 바람직하게는 50mTorr의 증착압력으로 막질이 상이한 다수의 보호용 필름 증착단계(S30) 시간의 80% 동안 필름을 증착하며, 이로 인해, RI 1.458, 증착률 11.5K의 포러스한 막질의 보호용 필름(f1)을 챔버(10) 내부에 형성하게 된다.Depositing the porous film of the protective film (S31) is a film deposition for 80% of the time of the plurality of protective film deposition step (S30) of different film quality at the deposition pressure of 40 to 60mTorr, preferably 50mTorr during deposition As a result, a porous film-like protective film f1 of RI 1.458 and a deposition rate of 11.5 K is formed in the chamber 10.

하드한 막질의 보호용 필름을 증착시키는 단계(32)는 증착시 압력이 5 내지 25mTorr, 바람직하게는 15mTorr의 증착압력으로 막질이 상이한 다수의 보호용 필름 증착단계(S30) 시간의 20% 동안 필름을 증착하며, 이로 인해 RI 1.470, 증착률 12.3K의 하드한 막질의 보호용 필름(f2)을 챔버(10) 내부에 형성하게 된다.The step 32 of depositing a hard film-like protective film is to deposit the film for 20% of the time of a plurality of protective film deposition step (S30) of different film quality at a deposition pressure of 5 to 25 mTorr, preferably 15 mTorr during deposition. As a result, a protective film f2 having a hard film quality of RI 1.470 and a deposition rate of 12.3K is formed in the chamber 10.

한편, 막질이 상이한 다수의 보호용 필름을 증착시키는 단계(30)는 반응가스의 비율을 조절함으로써 막질을 상이하게 할 수도 있다. 즉, 챔버(10)의 공급구(13)로 공급되는 반응가스에 함유되는 Si의 성분 비율을 낮춤으로써 챔버(10) 내부에 포러스한 막질의 보호용 필름(f1)을 형성하며, 챔버(10)로 공급되는 반응가스에 함유되는 Si의 성분 비율을 높임으로써 챔버(10) 내부에 하드한 막질의 보호용 필름(f2)을 형성하게 된다.Meanwhile, the step 30 of depositing a plurality of protective films having different film quality may make the film quality different by adjusting the ratio of the reaction gas. That is, by lowering the proportion of Si contained in the reaction gas supplied to the supply port 13 of the chamber 10, a porous film of protective film f1 is formed in the chamber 10, and the chamber 10 is formed. By increasing the component ratio of Si contained in the reaction gas supplied to the chamber, a hard film-like protective film f2 is formed in the chamber 10.

이와 같은 구조로 이루어진 증착 챔버의 클리닝 방법의 작용은 다음과 같이 이루어진다.The operation of the cleaning method of the deposition chamber having such a structure is performed as follows.

증착공정이 실시되는 챔버(10) 내부를 클리닝하기 위하여 공급구(13)를 통한 클리닝가스의 플로우(flow)에 의해 챔버(10) 내부에 증착된 필름을 제거(S10)함과 아울러 배기구(14)를 통해서 챔버(10) 내부의 미반응 클리닝가스 및 부산물을 외부로 배출시킴으로써 제거한다.In order to clean the inside of the chamber 10 in which the deposition process is performed, the film deposited in the chamber 10 is removed by the flow of the cleaning gas through the supply port 13 (S10) and the exhaust port 14 By removing the unreacted cleaning gas and by-products inside the chamber 10 to the outside through).

그런 다음, 챔버(10) 내부로 SiO2와 같은 보호용 필름(f1,f2)을 챔버(10) 내부에 형성하기 위하여 챔버(10)의 공급구(13)를 통하여 반응가스를 공급함과 아울러 히팅수단(15)의 가열에 의해 챔버(10) 내부가 가스반응(S30)하도록 하는데, 이 때, 증착압력의 가변, 즉, 압력조절밸브(12)의 스텝 제어, 또는 반응가스의 조성 비율 등에 의해 막질의 특성을 조절할 수 있다. Then, in order to form protective films f1 and f2 such as SiO 2 in the chamber 10 into the chamber 10, the reaction gas is supplied through the supply port 13 of the chamber 10 and the heating means. The inside of the chamber 10 is heated by the heating of 15 so that the gas reaction is performed (S30). The characteristics of can be adjusted.

또한, 챔버(10) 내부에 막질이 상이한 다수의 보호용 필름(f1,f2)을 증착에 의해 적층 형성시키는 단계(S30)는 서로 증착압력이 상이한 포러스한 막질의 보호용 필름(f1)을 증착시키는 단계(S31)와 하드한 막질의 보호용 필름(f2)을 증착시키는 단계(S32)로 이루어짐으로써 챔버(10) 내부는 물론 정전기척(11)에 막질을 달리하는 보호용 필름(f1,f2)를 적층시킬수 있다. 이로 인해, 포러스한 막질의 보호용 필름을 증착시키는 단계(S31)는 클리닝율이 신속하기 때문에 종래의 단점인 클리닝 타임의 증가를 해결하며, 하드한 막질의 보호용 필름을 증착시키는 단계(S32)는 하드한 보호용 필름(f2)으로도 충분한 보호막 역할을 할 수 있으며, 정전기척(11)에 놓여지는 첫 번째 웨이퍼(W)의 백사이드(Back-side)에 파티클이 부착됨으로써 발생되는 파티클 문제를 방지할 수 있다.In addition, the step (S30) of stacking a plurality of protective films (f1, f2) of different film quality by deposition in the chamber 10 is the step of depositing a porous film quality protective film (f1) of different deposition pressure with each other. (S31) and the step of depositing a hard film of the protective film (f2) (S32) is made of the protective film (f1, f2) of different film quality in the chamber 10, as well as the electrostatic chuck 11 can be laminated. have. For this reason, the step of depositing a porous film of protective film (S31) solves the increase of cleaning time, which is a disadvantage of the conventional disadvantage because the cleaning rate is fast, and the step of depositing a hard film of protective film (S32) is hard. One protective film f2 can also serve as a sufficient protective film, and can prevent particle problems caused by particles adhering to the backside of the first wafer W placed on the electrostatic chuck 11. have.

상술한 바와 같이, 본 발명에 따른 증착 챔버의 클리닝 방법은 증착챔버 내부에 상이한 막질의 보호용 필름을 증착시킴으로써 클리닝에 소요되는 시간을 단축시킴과 아울러 웨이퍼의 백사이드에 파티클이 부착되는 것을 방지하여 파티클로 인한 결함 발생을 방지하여 수율을 향상시키는 효과를 가지고 있다. As described above, the cleaning method of the deposition chamber according to the present invention reduces the time required for cleaning by depositing a protective film of different film quality inside the deposition chamber and prevents particles from adhering to the backside of the wafer. It has the effect of improving the yield by preventing the occurrence of defects.

이상에서 설명한 것은 본 발명에 따른 증착 챔버의 클리닝 방법을 실시하기 위한 하나의 실시예에 불과한 것으로서, 본 발명은 상기한 실시예에 한정되지 않고, 이하의 특허청구범위에서 청구하는 바와 같이 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능한 범위까지 본 발명의 기술적 정신이 있다고 할 것이다.What has been described above is only one embodiment for carrying out the cleaning method of the deposition chamber according to the present invention, the present invention is not limited to the above embodiment, as claimed in the following claims of the present invention Without departing from the gist of the present invention, one of ordinary skill in the art will have the technical spirit of the present invention to the extent that various modifications can be made.

Claims (7)

증착공정을 실시하는 챔버 내부를 클리닝하는 방법에 있어서,In the method for cleaning the inside of the chamber to perform the deposition process, 상기 챔버 내부로 클리닝가스를 플로우하여 상기 챔버 내부에 증착된 필름을 제거하는 단계와,Removing a film deposited in the chamber by flowing a cleaning gas into the chamber; 상기 챔버 내부의 미반응 클리닝가스와 부산물을 외부로 배출시켜서 제거하는 단계와,Removing the unreacted cleaning gas and by-products inside the chamber by discharging them to the outside; 상기 챔버 내부에 반응가스를 공급하여 상기 챔버 내부에 막질이 상이한 다수의 보호용 필름을 증착에 의해 형성하는 단계Supplying a reaction gas into the chamber to form a plurality of protective films having different films in the chamber by deposition; 를 포함하는 증착 챔버의 클리닝 방법.Cleaning method of the deposition chamber comprising a. 제 1 항에 있어서, The method of claim 1, 상기 막질이 상이한 다수의 보호용 필름을 증착시키는 단계는,Depositing a plurality of protective films of different film quality, 증착 압력을 조절함으로써 상기 보호용 필름의 막질을 상이하게 하는 것Varying the film quality of the protective film by adjusting the deposition pressure 을 특징으로 하는 증착 챔버의 클리닝 방법.Cleaning method of the deposition chamber, characterized in that. 제 2 항에 있어서, The method of claim 2, 상기 막질이 상이한 다수의 보호용 필름을 증착시키는 단계는,Depositing a plurality of protective films of different film quality, 상기 챔버의 압력을 변화시키는 압력조절밸브의 제어에 의해 상기 보호용 필름의 막질을 상이하게 하는 것By controlling the pressure regulating valve to change the pressure of the chamber to make the film quality of the protective film different 을 특징으로 하는 증착 챔버의 클리닝 방법.Cleaning method of the deposition chamber, characterized in that. 제 1 항에 있어서, The method of claim 1, 상기 막질이 상이한 다수의 보호용 필름을 증착시키는 단계는,Depositing a plurality of protective films of different film quality, 상기 챔버 내부에 포러스한 막질의 보호용 필름을 증착시키는 단계와,Depositing a porous film of protective film inside the chamber; 상기 챔버 내부에 반응가스를 공급하여 상기 챔버 내부에 하드한 막질의 보호용 필름을 증착시키는 단계Supplying a reaction gas into the chamber to deposit a hard film-like protective film inside the chamber; 를 포함하는 증착 챔버의 클리닝 방법.Cleaning method of the deposition chamber comprising a. 제 4 항에 있어서, The method of claim 4, wherein 상기 포러스한 막질의 보호용 필름을 증착시키는 단계는,Depositing the porous film of the protective film, 증착시 압력이 40 내지 60mTorr 인 것Pressure 40 to 60 mTorr during deposition 을 특징으로 하는 증착 챔버의 클리닝 방법.Cleaning method of the deposition chamber, characterized in that. 제 4 항에 있어서, The method of claim 4, wherein 상기 하드한 막질의 보호용 필름을 증착시키는 단계는,Depositing the hard film of the protective film, 증착시 압력이 5 내지 25mTorr 인 것Pressure of 5 to 25 mTorr during deposition 을 특징으로 하는 증착 챔버의 클리닝 방법.Cleaning method of the deposition chamber, characterized in that. 제 1 항에 있어서, The method of claim 1, 상기 막질이 상이한 다수의 보호용 필름을 증착시키는 단계는,Depositing a plurality of protective films of different film quality, 상기 반응가스의 비율을 조절함으로써 상기 보호용 필름의 막질을 상이하게 하는 것By controlling the proportion of the reaction gas to make the film quality of the protective film different 을 특징으로 하는 증착 챔버의 클리닝 방법.Cleaning method of the deposition chamber, characterized in that.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990006869A (en) * 1997-06-11 1999-01-25 조셉 제이. 스위니 Method and apparatus for removing mobile ions and metal contaminants in HDP-CVD chamber by coating season thin film in chamber

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