KR100799062B1 - Method for manufacturing a conductive composition and a rear substrate of a plasma display - Google Patents

Abstract

The present invention relates to a conductive composition for a plasma display panel (hereinafter referred to as PDP). More particularly, the conductive composition of the present invention relates to a conductive composition having high durability in etching liquid and suitable for forming partition walls from partition walls by chemical etching.

Conductive composition, chemical etching, bulkhead, plasma display panel, PDP

Description

METHOD FOR MANUFACTURING A CONDUCTIVE COMPOSITION AND A REAR SUBSTRATE OF A PLASMA DISPLAY}

1 is a diagram illustrating a problem point in manufacturing partition walls of a conventional PDP.

2 is a flow chart of a method of manufacturing an address electrode using the conductive composition of the present invention.

3 is a diagram illustrating a method of manufacturing an address electrode using the conductive composition of the present invention.

4 is a flowchart of a manufacturing method for forming a back substrate of a PDP.

5 is a diagram for explaining a manufacturing method for forming a back substrate of a PDP.

6 is a diagram illustrating an evaluation method for evaluating the conductive composition of the present invention.

7 is a diagram illustrating an evaluation method for evaluating the conductive composition of the present invention.

8 is a diagram illustrating an evaluation method for evaluating the conductive composition of the present invention.

9 is a diagram illustrating an evaluation method for evaluating the conductive composition of the present invention.

10 is a diagram illustrating an evaluation method for evaluating the conductive composition of the present invention.

Fig. 11 is a diagram illustrating a plasma display of the present invention.

The present invention relates to a conductive composition for a plasma display panel (hereinafter referred to as PDP). More particularly, the conductive composition of the present invention relates to a conductive composition having good chemical etching durability and suitable for forming the partition from the partition by chemical etching. The present invention also relates to an electrode using the conductive composition, a method for producing a back substrate for a PDP comprising the electrode and a plasma display comprising the back substrate.

The back substrate for PDP is composed of at least an address electrode and a partition wall disposed on the glass back substrate, and has a laminated structure in which phosphors (RGBs) are disposed between each partition wall. As a specific example, the dielectric layer or insulating layer is formed in between the address electrode and the partition wall.

The method of forming a partition on the back substrate for PDP includes a print laminating method, a sand blasting method, and a chemical etching method.

The print laminating method is a method of forming a partition having a predetermined thickness on a glass back substrate on which the address electrode is formed by repeatedly printing the partition material.

In the sand blasting method, the layer made of the partition wall material is formed on the glass back substrate on which the address electrode is formed and the mask layer is formed on the layer made of the partition wall material. Subsequently, the barrier layer and the sandblasting process are used to remove the partition material from the portion where the mask layer is not present. The mask layer is then removed.

In the chemical etching method, the layer made of the partition wall material is formed on the glass back substrate on which the address electrode is formed and the mask layer is formed on the layer made of the partition wall material. Subsequently, the barrier layer and the chemical etching are used to remove the partition material from the portion where the mask layer is not present. The mask layer is then removed.

In the case of forming the barrier ribs using the chemical etching method among the barrier rib forming methods described above, the address electrode may be damaged by the chemical etching. More practically, as shown in FIG. 1, when forming the partition wall, most of the address electrodes 102 are disposed on the side closer to the substrate than the side 104, which is generally formed of the partition member, or on the bottom of the barrier member. It is provided on the side closer to the substrate than on the side closer to the dielectric layer or the insulating layer 106 (ie, the address electrode is provided at the bottom of the layers). However, a layer usually composed of a barrier material and a dielectric layer or an insulating layer is not provided on top of the distal end 108 provided at the edge of the substrate to provide a voltage to the address electrode. Thus, when performing the chemical etching, the distal end portion 108 of the address electrode may be damaged by the etching liquid, which may cause a breakdown of the plasma display such as disconnection. In addition, when the dielectric layer or the insulating layer is not formed, the address electrode may be exposed to the etchant during the chemical etching process. This is detrimental to the address electrodes and can cause failure of the plasma display such as disconnection.

Japanese Unexamined Application Hei 11-339554 is an example of a conductive composition for an address electrode of a plasma display panel. Conductive pastes are described which comprise a conductive powder having an average particle diameter of 0.5 to 2 μm and a tap density of 3 to 7 g / cm 3, wherein the conductive powder and the organic element are the main component. This reference describes the average particle diameter and tap density of the conductive powder. Also described are glass frits composed of silicon oxide, boron oxide, zinc oxide and aluminum oxide. However, this reference does not describe chemical etching durability.

Japanese Unexamined Application No. 2005-70079 discloses a photosensitive conductive composition which is excellent in formability of a high resolution pattern and excellent in firing properties at a temperature of 620 ° C or lower. The application also discloses a plasma display panel using the conductive composition. The photosensitive conductive composition may comprise (A) a silver powder having a low crystallinity (particle size of 0.1 to 5 탆, or preferably 0.4 to 2.0 탆); (B) an organic binder; (C) photopolymerized monomers; (D) photopolymerization initiator; And (E) lead-free glass powder. In addition, silver powder having low crystallinity, represented by (A), has a half-value width of the Ag (111) surface peak and exhibits a value of 0.15 ° or more. However, the reference does not describe chemical etching durability.

Japanese published unexamined application 2004-127529 describes a photosensitive conductive paste for an address electrode in which a line pattern having a line width of 20 μm or less can be formed without generating line defects caused by undercuts. The photosensitive conductive paste includes (A) an organic binder; (B) silver powder having a diameter of the first particles of 0.1 to 0.8 mu m; (C) photopolymerized monomers; (D) photopolymerization initiator; And (E) an organic solvent. The content of silver powder in the paste is 40 to 60% by weight. The content of organic solvent in the organic materials found in the paste is at least 40% by weight. However, this reference does not describe chemical etching durability.

Japanese Unexamined Patent Application No. 2004-55402 discloses a conductive paste composition for PDP capable of forming an electrode pattern having excellent conductivity and excellent adhesive properties. This conductive paste composition comprises (A) a conductive powder having a specific surface area of 1.5 to 5.0 m 2 / g (particle diameter is preferably 0.5 to 5 μm); (B) glass frit; And (C) a binding resin. However, the references only describe examples in which lead-free glass frits are used as glass frits, and do not describe chemical etching durability by blending certain silver particles and lead-containing glass frits.

Japanese Unexamined Application Hei 11-339554 discloses that a refined pattern can be formed for electrodes of circuit patterns, plasma displays, substrates for plasma displays, the thickness of the electrodes can be reduced and the resistance Conductive pastes and conductive powders that can be degraded are described. The conductive paste includes as its essential components conductive powder and organic elements having an average particle diameter of 0.5 to 2 μm and a tap density of 3 to 7 g / cm 3. However, this reference does not describe chemical etching durability.

An improved pattern can be formed, and a substrate for a plasma display is described in which an electrode pattern with reduced thickness and a low resistivity is formed. The substrate comprises an electrode made of a conductive paste containing a conductive powder having an average particle diameter of 0.5 to 2 μm and a tap density of 3 to 5 g / cm 3. However, this reference does not describe chemical etching durability.

Japanese published unexamined application Hei 11-339554 describes a photosensitive conductive paste suitable for obtaining a circuit pattern having low resistance and capable of forming an improved pattern. An electrode manufacturing method is also described. This photosensitive conductive paste contains a spherical conductive powder and a photosensitive organic element having an average particle diameter of 0.7 to 6 mu m. However, this reference does not describe chemical etching durability.

As described above, various conductive compositions have been described. However, there is a need for a conductive composition capable of forming an address electrode having chemical etching durability.

The present invention relates to a conductive composition having a high chemical etching durability, consisting of silver powder and lead-containing glass frit having an average particle diameter of 1.0 to 2.5 μm.

The conductive composition of the present invention is used for the address electrode when the partition of the plasma display is formed by chemical etching. According to the conductive composition of the present invention, the ratio of the content of lead-containing glass frit to the silver powder content is preferably from 0.75: 99.25 to 6.0: 94.0. In addition, the softening point of the lead-containing glass frit is preferably 430 ° C to 510 ° C. The lead-containing glass frit preferably comprises PbO ₂ , B ₂ O ₃ and SiO ₂ .

The invention also relates to an electrode formed using the conductive composition described above.

In addition, the present invention provides a method of forming an address electrode comprising: forming an address electrode on a rear substrate comprising silver powder having a diameter of 1.0 to 2.5 μm and a lead-containing glass frit; Forming a layer made of a partition material on the back substrate; And chemically etching the layer composed of the partition material to form the partition wall. The method may further comprise forming a dielectric layer or an insulating layer on the back substrate between forming an address electrode and forming a layer consisting of a barrier material.

The invention further relates to a plasma display comprising a back substrate obtained by the above method of manufacturing a back substrate for a plasma display.

The conductive composition of the present invention has a high chemical etch durability. Therefore, damage to the address electrode end caused by the etchant during the chemical etching process in which the partition wall is formed can be controlled. As a result, defects resulting from damage of the address electrode ends can be adjusted.

The present invention relates to compositions useful for electrodes comprising silver powder and lead-containing glass frits having a predetermined average particle diameter (average particle diameter is 1.0 to 2.5 μm). The composition of the present invention is a particularly useful conductive composition for the address electrode and can prevent damage to the address electrode during the chemical etching process in which the PDP is formed by chemical etching.

The conductive composition of the present invention comprises silver powder and lead-containing glass frit having an average particle diameter of 1.0 to 2.5 μm. The content ratio of lead-containing glass frit to silver powder is preferably from 0.75: 99.25 to 6.0: 94.0 by weight, more preferably from 1.5: 98.5 to 6.0: 94.0 by weight, or even more preferably from 1.5: 98.5 to 3.0: 97.0 by weight. to be. By adjusting the ratio in the above-described range, high chemical etching durability can be obtained in forming the partition wall.

If the softening point of the lead-containing glass frit is preferably between 430 ° C. and 510 ° C., more preferably between 470 ° C. and 510 ° C., higher chemical etching durability is obtained.

The term softening point (Ts) of the glass frit refers to the second thermal peak generated by differential thermal analysis (DTA). The softening point (Ts) of the glass frit can be measured by a device for differential thermal analysis (DTA). Substantially, the softening point can be measured using about 50 mg of glass frit powder heated at a rate of temperature rise of 20 ° C./min.

While not wishing to be bound by theoretical concepts, it is believed that by reducing the size of the average particle diameter of silver, the film is densified, thereby improving chemical etch durability. In this respect, however, the size range of the particles taught herein is important because the silver powder may agglomerate if the average particle diameter of silver is too small. In addition, it is known that when the composition of the present invention is a photosensitive conductive composition, excessively reducing the average particle diameter size of silver results in lowering its photosensitivity.

When the ratio of Ag to glass frit at the electrode is high, it is known that the electrode, a burned material (residue with only Ag and Pb system glass frits remaining), has a low chemical etch durability. The molten glass frit is likely to corrode during the chemical etching process, and the electrode is considered to be damaged from the glass frit. Therefore, it is desirable to limit the ratio of conductive powder ratio to glass frit ratio to a predetermined range so as to avoid undesirable features in the present invention.

The conductive composition of the present invention may be photosensitive. When the conductive composition of the present invention is a photosensitive composition, a radiosensitive element constituting the alkaline developing-type radiosensitive resistant composition described below may be added. When adding the photosensitive composition to the conductive composition, the electrode pattern can be formed without using the resistant composition.

In order to formulate the conductive composition, the vehicle of each urea is formulated with organic urea and solvent, if necessary, and then mixed with silver powder and glass frit. The mixture obtained using a sand mixer, such as a roll mixer, mixer, homogeneous mixer, ball mill and bead mill, is then kneaded to obtain a conductive composition.

(I) silver powder

Silver powder is added to the compositions of the present invention to provide conductivity. Its average particle diameter is 1.0 to 2.5 mu m, or preferably 1.0 to 2.0 mu m, more preferably 1.0 to 1.5 mu m. By measuring the particle diameter distribution using laser diffraction scattering the average particle diameter can be obtained and defined as d 50. Microtrac Model X-100 is an example of a commercially available device.

If it is determined that the chemical etch durability should be increased, the tap density of Ag is preferably at least 4.0 g / cm 3. The tap density can be measured by the method established by ASTM B-527. In this case, the device is, for example, Dual Autotap (Quantacrome Corp.) or Tap Pack Volumeter (Sahndon Southern Instruments Inc.). A sample volume of 25 g and 10 ml cylinder was used according to an example of the actual measuring method, the sample was tapped 800 times, and then the tap density was measured as powder type packing density.

The form of silver is not particularly limited. It may be spherical or flaky. However, spherical forms are preferred in photosensitive conductive compositions.

(II) glass Frit

Glass frit is added to increase the sealing property of the composition with the glass substrate used as the back substrate for PDP. In addition, the glass frit can sinter silver particles at low temperatures. The average particle diameter is generally 0.1 μm to 10 μm. Examples of lead-containing glass frits include lead borosilicate systems such as PbO, B ₂ O ₃ , and SiO ₂ . The lead borosilicate system glass frit further contains another metal compound. Examples of other metal compounds include Al ₂ O ₃ , ZnO, ZrO ₂ , CaO, CuO, Bi ₂ O ₃ , BaO, MoO ₃ , MgO, La ₂ O ₃ , Nb ₂ O ₅ , Na ₂ O, Li ₂ O , GeO ₂ , P ₂ O ₅ , WO ₃ , Li ₂ SO ₄ , K ₂ O, Ti ₂ O, Ag ₂ O, CeO ₂ , Cs ₂ O, CdO, Cr ₂ O ₃ , SnO ₂ , NiO, FeO, CoO, RuO ₂ , V ₂ O ₅ And Y ₂ O ₃ . Such metal compounds may be added to the composition based on the purpose for use. The content of glass frit in the conductive compound is generally from 0.01% to 25% by weight relative to the conductive particles.

The total amount of Ag particles and glass frits in the composition of the present invention is 60% to 90% by weight based on the total weight of the dry conductive composition (ie, the conductive composition free of organic medium).

(III) organic polymer binder

When coating a conductive composition onto a substrate using screen printing or methods commonly known in the art, organic polymer binders are used to improve coating properties and stabilization of the coating thin film. The organic polymer binder is removed when the conductive composition is sintered to form the electrode.

When the coated dry conductive composition is developed by the aqueous developer and its pattern is formed, it is preferable to use an organic polymer binder having a high resolution in consideration of the developing ability by the aqueous developer. Examples of organic polymer binders capable of meeting these conditions include those containing non-acidic comonomers or acidic comonomers. Preferred are copolymers or interpolymers (mixed polymers) formulated by the compositions described below.

(1) non-acidic comonomers containing C ₁ -C ₁₀ acrylic alkyl, C ₁ -C ₁₀ methacryl alkyl, styrene, substituted styrene or a combination of the above compositions; And

(2) An acidic comonomer comprising an ethylene-type unsaturated carboxylic acid.

The acidic comonomer element described in (2) for the purpose of the present invention is preferably found in the comonomer or intermonomer. Acidic functional groups can be used to develop coated thin films made from the compositions of the present invention in basic aqueous solutions such as 0.8% sodium carbonate solution.

The acidic comonomer content is at least 15% by weight, or preferably 15-30% by weight relative to the total weight of the organic polymer binder. If the acidic comonomer is present at a concentration of less than 15%, it is difficult to wash the composition with an aqueous base. When the organic acidic comonomer is present at a concentration of more than 30%, the composition is poorly stable under developing conditions and only a part is developed during phase development. Examples of suitable acidic comonomers include ethylene-type unsaturated monocarboxylic acids such as acrylic acid, methacrylic acid and crotonic acid; Ethylene-type unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, citraconic acid, vinyl succinic acid and maleic acid; Hemi-esters of the composition; And in some cases, anhydrides of the compositions or mixtures thereof. The methacryl polymer group is more preferable than the acrylic polymer group because it surely burns when the surrounding oxygen is low.

If the non-acidic comonomer is an acrylic alkyl or methacryl alkyl described above, such non-acidic comonomers preferably comprise at least 50% by weight of the organic polymer binder, or preferably at least 70 to 75% by weight of the organic polymer binder. Do.

If the non-acidic comonomer is styrene or substituted styrene, it is preferred that these non-acidic comonomers constitute 50% by weight of the organic polymer binder and the remaining 50% by weight are acidic comonomers such as hemi-ester of maleic anhydride. . Preferred substituted styrenes are α-methylstyrene.

If the non-acidic portion of the organic polymer binder is acrylic alkyl, methacryl alkyl, styrene or substituted styrene, the non-acidic portion may be substituted with another monomer. Examples of substituted monomers include acrylonitrile, vinyl acetate and acrylamide. The non-acidic urea may contain up to about 50% by weight of the substituted monomer. However, when the organic polymer binder contains the substituted monomer, it is more difficult to completely remove the organic polymer binder during the sintering process. Accordingly, monomers of this kind are preferably less than about 25% by weight of the total weight of the organic polymer binder.

As long as the criteria such as the developing and sintering properties described above are satisfied, the organic polymer binder may be made of a single copolymer or a combination of copolymers. When the copolymer is combined, small amounts of other organic polymer binders may be added in addition to the copolymers described above (eg, the ratio of copolymers described above to additional organic polymer binders is 95: 5). Examples of further organic polymer binders include polyolefins such as polyethylene, polypropylene, polybutylene, polyisobutylene and ethylene-propylene copolymers, and lower alkylene oxide polymers.

When the organic polymer binder is the preferred one described above, the organic polymer binder that can be used in the conductive composition of the present invention can be prepared by a solution polymerization method conventionally used in acrylic ester polymerization.

Typically, the acidic acrylic ester polymers described above are one or more vinyls capable of copolymerizing α- or β-ethylene-type unsaturated acids (acidic comonomers) in organic solvents having a relatively low boiling point (75-150 ° C.). After mixing with the monomer (non-acidic comonomer) to obtain a solution of monomer mixture of 10 to 60%; The resulting mixture can be prepared by heating at a temperature at which the solvent is refluxed under normal pressure. After the polymerization is substantially terminated, the resulting acidic polymer solution is cooled to room temperature and the product is collected. Thereafter, viscosity, molecular weight and acid equivalent are measured.

In addition, the molecular weight of the organic polymer binder described above is maintained below 50,000, or preferably below 25,000, or more preferably below 15,000.

The content of the organic polymer binder in the conductive composition is generally 5 to 50% by weight of the total weight of the dry conductive composition (ie, the conductive composition from which the organic medium has been removed).

The conductive composition of the present invention may be formulated as a photosensitive composition. In this case, the composition comprises at least a photopolymerization-type monomer and a photopolymerization initiator in addition to the elements described above. For example, after being formed into a coating thin film, the conductive composition of the present invention can photopolymerize the photopolymerization-type monomer by light irradiation (eg, ultraviolet irradiation). The polymer also acts as a binder resin for the address electrode.

< Photopolymerization -Type Monomer>

The photopolymerization-type monomers can be used independently or in combination with a plurality of monomers. Examples of preferred monomers include t-butyl (meth) acrylate, 1,5-pentanedioldi (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, ethylene glycol di (meth) acrylate, 1,4 Butanediol di (meth) acrylate, diethylene glycol di (meth) acrylate, hexamethylene glycol di (meth) acrylate, 1,3-propanediol di (meth) acrylate, decamethylene glycol di (meth) acrylic Rate, 1,4-cyclohexanediol di (meth) acrylate, 2,2-dimethylolpropanedi (meth) acrylate, glycerol di (meth) acrylate, tripropylene glycol di (meth) acrylate, glycerol tree (Meth) acrylate, trimethylolpropane tri (meth) acrylate, a compound disclosed in U.S. Patent No. 3,380,381 (patent reference 8), 2,2-di (p-hydroxyphenyl) propanedi (meth) acrylate , Pentaethetitol tetra (meth) acrylate, tri Styrene glycol diacrylate, polyoxyethyl-1,2-di- (p-hydroxyethyl) propanedimethacrylate, bisphenol Adi- [3- (meth) acryloxy-2-hydroxypropyl] ether, Bisphenol Adi- [2- (meth) acryloxyethyl] ether, 1,4-butanedioldi- (3-methacryloxy-2-hydroxypropyl) ether, triethylene glycol dimethacrylate, polyoxypropyltrimethyl All propane triacrylate, butylene glycol di (meth) acrylate, 1,2,4-butanediol tri (meth) acrylate, 2,2,4-trimethyl-1,3-pentanedioldi (meth) acrylate , 1-phenylethylene-1,2-dimethacrylate, fumaric diallyl, styrene, 1,4-benzenedioldimethacrylate, 1,4-diisopropenylbenzene and 1,3,5-tri Isopropenylbenzene. Here, (meth) acrylate represents both acrylate and methacrylate.

The content of the photopolymerization-type monomer in the conductive composition is generally 1 to 25% by weight of the total weight of the dry conductive composition (ie, the conductive composition from which the organic medium has been removed).

< Photopolymerization Initiator >

Photopolymerization initiators are used to photopolymerize the photopolymerization-type monomers. The photopolymerization initiator is thermally inert below 185 ° C., but generates free radicals when exposed to actinic rays. Examples of photopolymerization initiators include compounds having two intramolecular rings in the conjugated carbocyclic ring system. Compounds of this kind include substituted or unsubstituted polynuclear quinones. Substantially, examples of quinones include 9,10-anthraquinone, 2-methylanthraquinone, 2-ethylanthraquinone, 2-t-butylanthraquinone, octamethylanthraquinone, 1,4-naphthoquinone, 9,10 Phenanthrenequinone, benzo [a] anthracene-7,12-dione, 2,3-naphthacene-5,12-dione, 2-methyl-1,4-naphthoquinone, 1,4-dimethylanthraquinone, 2,3-dimethylanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, retenquinone, 7,8,9,10-tetrahydronaphthacene-5,12-dione and 1,2,3 , 4-tetrahydrobenzo [a] anthracene-7,12-dione. Another useful photopolymerization initiator is described in US Pat. No. 2,760,863 (patent reference 9). Some of the compounds described in this patent reference are thermally active at low temperatures such as 85 ° C. Examples of compounds of this type include bisnal ketalaldonyl alcohols such as benzoin and pivaloin; Acyloin ethers such as methyl ether and ethyl ether of benzoin; carbohydrate-substituted aromatic acyloins, including α-methylbenzoin, α-allylbenzoin, α-phenyl benzoin, thioxanthone and derivatives thereof and hydrogen donors.

It is also possible to use photo-reducing dyes and reducing agents as initiators. Examples of this kind of initiator are described in US Pat. No. 2,850,445; 2,875,047; 3,097,96; 3,074,974; 3,074,974; 3,097,097; And 3,145,104 (Patent References 10-15); And 2,4,5-triphenylimizolyl duplicitas with hydrogen donors such as phenazine, oxazine and quinone groups (including Michler's ketone, ethyl Michler's ketone and benzophenone) and containing leuco dyes ; And mixtures thereof (see US Pat. Nos. 3,427,161; 3,479,185; and 3,549,367 (patent references 16-18)).

In addition, the radiosensitizers described in US Pat. No. 4,162,162 (Patent Reference 19) are useful with photoinitiators and light inhibitors. The content of photopolymerization initiator in the conductive composition is generally from 0.05 to 15% by weight of the total weight of the dry conductive composition (ie, the conductive composition from which the organic medium has been removed).

<Organic Medium>:

The conductive composition of the present invention may comprise an organic medium. The main purpose of using the organic medium is to convert the dispersion comprising the solids portion of the composition of the present invention into a form which is finely ground to easily coat glass, ceramic or other substrates. Therefore, the solid portion of the organic medium must first be a medium which can be dispersed while maintaining proper stability. Next, the organic medium should have rheological properties such that good coating properties can be added to the dispersion.

The organic medium may be one kind of solvent or a mixture of solvents. It is essential to use a solvent in which the polymer and other organic elements can be completely dissolved. It is also essential to select a solvent that is inert (not reactive) with other elements in the conductive composition. It is preferable to use a highly volatile solvent. The solvent can easily evaporate from the composition even when coated at a relatively low temperature. Suitable solvents for the paste composition have a boiling point below 300 ° C., preferably below 200 ° C., under normal pressure. Examples of the solvent include aliphatic alcohols and aliphatic alcohol esters such as acetic acid esters and propionate esters; Terpenes made of rosin, α- or β-terpineol or mixtures thereof; Ethylene glycol and ethylene glycol esters such as ethylene glycol monobutyl ether and butyl cellosolve beacetate; Butylcarbitol and carbitol esters such as butylcarbitol acetate and carbitol acetate; And texanol (2,2,4-trimethyl-1,3-pentanediol monoisobutylate).

The content of the organic medium in the conductive composition is preferably 10 to 20% by weight of the total weight of the composition.

<Additional element>

Additional elements known to those skilled in the art may be present in the composition, such as dispersants, stabilizers, plasticizers, parting agents, stripping agents, antifoams and wetting agents. Appropriate elements can be selected based on the prior art.

The conductive composition of the present invention can be coated onto a substrate by screen printing, coating, lamination and other methods known in the art. The method can be used to coat the composition of the invention on the entire substrate. In such cases, the compositions of the present invention may be prepared comprising each of the above described elements. In addition, when printing a patterned composition on a substrate in screen printing, a patterning process such as exposure can be omitted. Thus, the composition can be prepared without the photosensitive element described above.

The composition of the present invention can be used to produce an address electrode for a PDP. When the address electrode is produced by chemical etching using the composition of the present invention, the address electrode is hardly damaged even when exposed to the etchant. Thus, the composition of the present invention can control the cause of defects such as disconnection in the plasma display.

The present invention includes an electrode composed of the conductive composition described above. The electrode of the present invention can be used as an address electrode of a back substrate for PDP. As shown in FIG. 3E, the electrode may be formed in a stripe shape on the glass substrate. The electrode of the present invention has an appropriate thin film thickness, shape and pitch as an address electrode for a PDP.

When the electrode of the present invention is used as the address electrode of the back substrate for PDP and the partition is manufactured by chemical etching, the electrode is hardly damaged even when exposed to the etching liquid. For example, the end portion of the address electrode continuously exposed to the etching liquid is hardly damaged. Thus, the electrode of the present invention can control the cause of defects such as disconnection in the plasma display.

The present invention comprises forming an address electrode on a rear substrate containing silver powder having a diameter of 1.0 to 2.5 μm and a lead-containing glass frit; Forming a layer made of a partition material on the rear substrate; And chemically etching the layer made of the barrier ribs to form the barrier ribs.

The method of the present invention will be explained with reference to the drawings.

The first step is to form an address electrode using the conductive composition of the present invention described above. 2 and 3 are explanatory diagrams of a first step. 2 is a flowchart and FIG. 3 is a diagram illustrating an actual manufacturing process. The first step is described with appropriate reference to FIGS. 2 and 3. 2 and 3 illustrate a case where patterning is performed using a photosensitive conductive composition.

First, the composition of the present invention is coated onto a glass substrate (FIG. 2: 202). The conductive composition 304 is entirely coated on the glass substrate 302 by screen printing and coating method 306 using a dispenser (FIG. 3A). The coated conductive composition is then dried (FIG. 2: 204). If the conductive composition layer is dried, the drying conditions are not particularly limited. For example, it may be dried at 100 ° C. for 18 to 20 minutes. The composition can also be dried using a conveyor type infrared dryer.

The dried conductive composition is then patterned. In this patterning treatment, the dried conductive composition is exposed (Figure 2: 206) and developed (Figure 2: 208). In the exposure process, a photomask 308 having an electrode pattern is disposed on the dried conductive composition 304 to which ultraviolet light 310 is irradiated (FIG. 3B). Exposure conditions depend on the type of conductive composition and the thickness of the thin film of the conductive composition. For example, it is preferable to use ultraviolet rays of 100 mJ / cm 2 to 300 mJ / cm 2 in an exposure process using a gap of 200 to 400 μm. The irradiation period is preferably 5 to 30 seconds. Develop with alkaline solution. As alkaline solution, 0.4% sodium carbonate solution can be used. The alkaline solution 312 can be developed by spraying an exposed conductive composition layer 304 on the substrate 302 or by immersing the substrate 302 with the exposed conductive composition 304 into the alkaline solution (FIG. 3 ( C)).

The patterned conductive composition is then sintered (FIG. 2: 210; FIG. 3D). The composition can be sintered in a sintering furnace having a predetermined temperature level. The highest temperature in the sintering process is preferably 400 to 600 ° C, or more preferably 500 to 600 ° C. The sintering period is preferably 1 to 3 hours, or more preferably 1.5 hours. After the sintering and cooling process, a substrate 303 having an address electrode 314 is obtained (FIG. 3E). The thin film thickness and spacing of the address electrode may be the same as the conventional one.

One example of forming the address electrode by patterning is described above. However, the first step is not limited to this method. For example, according to another method, the electrode pattern is printed on the substrate 302 in advance by screen printing, and then dried and sintered to form the address electrode 314. The second and third steps are described below with appropriate reference to FIGS. 4 and 5. The second step is a step of forming a layer made of barrier ribs on the back substrate on which the address electrodes are formed by the above-described method. The third step is a step of forming a partition by chemically etching the layer composed of the partition material described above.

First, the partition wall material is coated on the back substrate 302 obtained in the previous step and the partition wall layer 504 is formed (Fig. 4: 402; Fig. 5 (A)). According to the present invention, a dielectric layer or an insulating layer 502 can be formed on the entire back substrate to cover the address electrodes before coating the partition material. If necessary, the dielectric layer or the insulating layer 502 is entirely coated on the glass substrate 302 on which the address electrode is formed by screen printing or dispenser. After the dielectric layer or the insulating layer 502 is formed, the partition wall material is entirely coated on the layer by screen printing or dispenser (5 (A)).

The dielectric layer or the insulating layer uses a material that is durable to the etching liquid during the chemical etching process in which the partition wall is formed. For example, a material with low softening characteristics can be used, such as Pb-B-Si system glass. In addition, it is essential to use a partition material that can be removed by etching liquid when the partition is formed. For example, Pb-B-Si system glass with low softening characteristics that control the etch rate can be used.

Subsequently, the formed dielectric layer or insulating layer and the partition wall material are sintered (Fig. 4: 404). Sintering conditions are the same as in the prior art and are not limited. For example, the temperature may be 400 to 580 ° C. and the duration is 1.5 to 3.0 hours.

Then, dry film resist (DFR) or photo resist (PR) is coated and patterned on the sintered partition wall layer (Fig. 4: 406 and 408; Fig. 5 (B)). . The DFR or PR material is entirely coated on the partition layer 504 by screen printing or dispenser. The coated barrier material layer is then dried, exposed, developed and patterned to obtain a resist pattern (506).

Resist materials and barrier materials are generally used to form barrier ribs by chemical etching in PDP panel formation. For example, DFR commonly used for sandblasting can be used as a resist material. Depending on the conditions for patterning the resist layer, exposure is carried out at 100 mJ / cm 2 to 500 mJ / cm 2 for 5 to 50 seconds and developed by spraying 1% sodium carbonate solution.

The next step is a step of forming a partition 504 'by chemically etching the layer 504 made of the partition material (Fig. 4: 410; Fig. 5 (C)). An acidic solution 508 is sprayed during the chemical etching process to dissolve and remove the portion where the resist pattern is not formed to form a partition 504 ′.

As the acidic solution, 0.5 to 1.0% aqueous hydrochloric acid solution can be used. When chemical etching is performed by spraying, the spraying pressure may be 1.0 kg / cm 2 to 3.0 kg / cm 2.

Since the manufacturing method of the present invention uses the conductive composition of the present invention, the exposed portion 510 of the address electrode is hardly damaged even if it is treated by chemical etching.

Subsequently, the resist (DFR or PR) pattern remaining on the partition wall is removed (Fig. 4: 412; Fig. 5 (D)). An alkaline aqueous solution (eg, an aqueous sodium hydroxide solution) 512 is sprayed to remove the resist pattern. When removing the resist by spraying, the spraying pressure may be 1.0 kg / cm 2 to 3.0 kg / cm 2.

According to the present invention, the partitions may be arranged in parallel to each other to form a stripe shape or to be arranged in a double cross to arrange the partitions in a desired shape.

Subsequently, fluorescent materials 514, 516 and 518 emitting red (R), green (G) and blue (B) are filled between the partition walls. Thereafter, a space between the dried and sintered partitions 504 ′ may be selectively filled with a fluorescent paste having red (R), green (G), and blue (B), respectively, to form a fluorescent layer. In order to fill the fluorescent paste, various methods conventionally used, such as a screen printing method, a photo lithography method, an inkjet method, a dispensing method, and an electric field jet method, can be used. The present invention can use any of the above methods.

According to the screen printing method, the fluorescent paste is selectively filled between the partitions by screen printing and dried. After repeating the process several times, the partition wall is sintered.

In addition, according to the photolithography method, the photosensitive fluorescent paste is coated, exposed, developed and dried. After repeating the above process several times, the partition wall is sintered to form a fluorescent layer.

Further, according to the inkjet method, the fluorescent paste is sprayed from the inkjet nozzle edge to fill the space between the partition walls with the fluorescent paste.

According to the dispensing method, a paste coating nozzle having a discharge hole is used, pressure is applied inside the coating nozzle, and the partition walls are filled with fluorescent paste.

The electric field jet method is an improved version of the dispensing method. According to this method, the paste is coated while applying a voltage between the coated object and the electrode disposed near the paste exit hole of the coating nozzle.

The fluorescent paste may be one commonly used.

As described above, a partition wall is formed (Fig. 4: 414; Fig. 5E), and a back substrate for a PDP can be obtained.

The present invention includes a plasma display panel using the above-described back substrate. As shown in Fig. 11, the plasma display panel of the present invention has a structure in which the front substrate 1102 is attached to the back substrate 1100 obtained as described above.

Substantially, as shown in the figure, the front substrate includes a glass substrate 1106 for the front substrate, a display electrode 1104 and a dielectric material (including MgO) layer 1108. The back substrate 1100 includes a glass substrate 302, an address electrode 314 disposed on the glass substrate, a dielectric layer 502, and barrier ribs 504 ′ disposed at predetermined intervals on the dielectric layer. In addition, a sealing material 1110 for sealing the discharge space is located between the front substrate adjacency and the back substrate adjacency. The microcavity separated by the front substrate 1102, the back substrate 1100, and the partition wall 504 ′ is the discharge space (1112). The fluorescent layers 514, 516, and 518 of R, G, and B colors are placed in an exhaust space filled with a neon and quinone mixture.

In this kind of PDP, an image is displayed by applying a voltage between the display electrode and the address electrode and selectively dissipating the fluorescent material formed on the inner surface of the discharge space. According to the example shown in the figure, the partition walls can be arranged in a row parallel to each other to produce a striped discharge space, or the discharge space in a matrix form can be arranged in a double cross.

Next, a method of manufacturing a plasma display panel (PDP) equipped with the above-described structure is briefly described. According to the present method, using the front panel forming method in which panel components such as a display electrode and a dielectric layer are sequentially formed, and the back substrate manufacturing method of the present invention described above, the front panel and the back panel are formed on the front substrate 1102. Form on one side. The front substrate 1102 is then placed on top of the back substrate 1100 so that each panel component is connected to each other and the front substrate and the back substrate adjacency are sealed with a sealing material 1110. Subsequently, air is discharged from the discharge space 1112 formed between the two attached and sealed substrates, and then the aging discharge gas is supplied to the discharge space.

Here, the sealing material made of glass frit having a low melting point during the sealing process described above is coated on the edges of either or both of the front substrate and the back substrate using a screen printing method or the like. The coated substrate is then pre-sintered to form a sealing layer. Thereafter, the front and back substrates are engaged and heat treated while pressing (eg 400 ° C.). In this way the sealing material described above is softened, pulverized and further heat-sealed to seal the discharge space between the substrates.

Example

The invention will be described in detail with reference to the examples. However, the examples described below are not intended to limit the invention. In the examples described below, percentages refer to weight percentages unless otherwise noted.

< Example 1>

UV photosensitive thick film conductive compositions were used in this example.

Ag To measure average particle diameter

The average particle diameter may be defined as d50 obtained by measuring the particle diameter distribution by laser diffraction scattering. Microtrack Model X-100 is one example of a commercially available device.

After weighing 0.5 g of powder into a beaker, the beaker was filled with a dispersion medium in which 0.2% of a dispersant (Darvan C) was dissolved in 100 cc of distilled water. The resulting solution was stirred for 5 minutes with a 200 W ultrasonic stirrer. The solution obtained for 75 seconds was then measured using Microtrack Model X-100 to obtain a d50 value. The obtained d50 value was used as the average particle diameter.

A. Organic Medium Manufacturing

Texanol (2,2,4-trimethyl-1,3-pentanediol monoisobutylate) and an acrylic polymer binder having a molecular weight of 30,000 as a solvent were mixed and stirred. The temperature was raised to 100 ° C. while stirring the above. Stirring was continued while heating until all of the binder polymer dissolved. The resulting solution was cooled to 75 ° C. Subsequently, Irgacure 907 and 651 of Chiba Specialty Chemicals Co. are added as a photopolymerization initiator, and TAOBN (1,4,4-trimethyl-2,3-diazabicyclo is added as a stabilizer. [3.2.2] -non-2-ene-N, N'-dioxide was added The mixture was stirred at 75 ° C. until all of the solids were dissolved The solution was passed through a 40 micron filter and cooled I was.

B. Glass Frit  Produce

Glass frit was prepared by mixing each element with the composition described below.

Glass frit A with a softening point of 499 ° C. (68% by weight of PbO; 14% by weight of B ₂ O ₃ ; and 17% by weight of SiO ₂ ).

Glass frit B (PbO: 77 wt%; B ₂ O ₃ : 12.5 wt%; SiO ₂ : 9.1 wt%; and Al ₂ O ₃ : 1.4 wt%) with a softening point.

Glass frit C with a softening point of 425 ° C. (BaO: 0.5 wt%; B ₂ O ₃ : 7.5 wt%; SiO ₂ : 0.5 wt%; Al ₂ O ₃ : 0.5 wt%; ZnO: 15 wt%; and Bi ₂ O ₃ : 75 wt%).

Glass frit D (PbO: 11 wt%; B ₂ O ₃ : 3.5 wt%; SiO ₂ : 3.5 wt%; and Bi ₂ O ₃ : 82 wt%) with a softening point of 385 ° C.

C. Paste Manufacturing

2.12% by weight of TMPEOTA (trimethylolpropaneethoxytriacrylate), 0.83% by weight of TMPPOTA (trimethylolpropanepropoxytriacrylate) and 3.62% by weight of BASF Corporation as photopolymerization monomer under yellow light. Laromer LR8967 (polyester acrylate oligomer); And 24.19% by weight of the above-described organic medium in a mixing bath with 0.12% by weight of butylated hydroxytoluene, 0.11% by weight malonic acid and 0.12% by weight BYK085 from Byk-Chemie Corporation as other organic elements. And a paste was prepared. Subsequently, spherical Ag powder and glass frit having an average particle diameter of 1.27 mu m as an inorganic substance were added to the organic component mixture. The ratio of Ag powder to glass frit was 1.5: 98.5 by weight. The whole composition was mixed until the particles of inorganic material were wetted with the organic material. The mixture was treated by roll milling using a three phase roll mill. The resulting paste was passed through a 500 mesh filter screen. The viscosity of the paste was adjusted with the solvent, texanol, described above, to obtain an optimum viscosity for the print coating.

< Example  2 to 6 and comparison Example  1 to 5>

A conductive composition was prepared in the same manner as in Example 1 except for replacing the components with those shown in Table 1.

Sample Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Ag PSD (d50) 1.27 μm 1.27 μm 1.27 μm 1.27 μm 1.27 μm 1.27 μm 1.5 μm 1.27 μm Frit Pb-type Pb-type Pb-type Pb-type Pb-type Pb-type Pb-type Pb-type Frit temperature (℃) 499 499 499 438 438 439 499 499 Frit / Ag 1.5 / 98.5 3.0 / 97.0 4.5 / 95.6 1.5 / 98.5 3.0 / 97.0 4.5 / 95.5 0.75 / 99.25 6.0 / 94.0

<Comparison Example  1 to 5>

A conductive composition was prepared in the same manner as in Example 1 except for replacing the components with those shown in Table 2.

Sample Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Ag PSD (d50) 1.27 μm 1.27 μm 1.27 μm 3.1 μm 2.85 μm Frit Bi-type Bi-type Bi-type Bi-type Bi-type Frit temperature (℃) 425 425 425 385 422 Frit / Ag 1.5 / 98.5 3.0 / 97.0 4.5 / 95.6 7.0 / 93.0 6.8 / 93.2

< Examples 9 to 12 and Comparative Examples 6 to 7>

In this example and the comparative example, the effect on the particle diameter of the silver powder in the conductive composition of the present invention was observed.

A conductive composition was prepared in the same manner as in Example 1 except for replacing the components with those shown in Table 3. In addition, chemical etching durability and resolution evaluated by the evaluation method described below are also shown.

Sample Comparative Example 6 Example 9 Example 10 Example 11 Example 12 Comparative Example 7 Ag PSD (d50) 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm 3.0 μm Frit Pb-type Pb-type Pb-type Pb-type Pb-type Pb-type Frit temperature (℃) 499 499 499 499 499 499 Frit / Ag 1.5 / 98.5 1.5 / 98.5 1.5 / 98.5 1.5 / 98.5 1.5 / 98.5 1.5 / 98.5 Resolution (L / S) Fading <30 μm <30 μm <30 μm <30 μm <30 μm Chemical etching durability Not measurable ◎ ◎ ○ △ X

As shown in Examples 9-12 and Comparative Examples 6-7, the range of average particle diameter (d50) of Ag particles in the conductive composition of the present invention was preferably 1.0-2.5 μm. The particle diameter was preferably 1.0 to 2.0 mu m, or more preferably 1.0 to 1.5 mu m.

< Evaluation method>

(i) Address electrode pattern formation

Electrode patterns were formed using the conductive compositions of Examples 1-12 and Comparative Examples 1-7 described above. PD200 natural glass (2 inches x 3 inches) was used as the substrate. As shown in Fig. 6, address electrodes were formed on the substrate (the number of electrodes having respective line widths was 10). The line widths of the address electrodes on the substrate were 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, and 120 µm. In the figure, address electrodes having line widths of 20 and 30 μm are denoted by 314 and 314 'and address electrodes having line width of 120 μm are ^denoted by 314 ⁿ and address electrodes having different line widths are represented by dots (. (The same rule applies to Figures 6 to 10, where n is 8).

The conditions for forming the electrode pattern were as follows. First, the conductive compositions of Examples 1-12 and Comparative Examples 1-7 were printed on a substrate using screen mask SUS # 400. The conductive composition was adjusted so that the dry thin film thickness was 8 μm ± 0.5 μm and the thin film thickness after sintering was 3 μm ± 0.1 μm. The conductive composition was then dried, exposed, developed and sintered under the conditions described below.

(a) drying

Conveyor Type  Infrared dryer

Hold at 100 ° C./18-20 minutes. Full profile = 20 minutes.

(b) exposure

20 μL / S to 120 μL / S artwork (photomask) used

The composition was exposed to 100 to 300 mJ / cm 2 with an exposure distance of 200 to 400 μm.

(c) phenomenon

0.4% NaCO ₃ solution was sprayed into the composition and developed at a pressure of 1.5 Kgf / cm 2 for 25 seconds. The solution temperature was 30 ° C.

(d) sintering

Hold for 570 ° C./7.5 min. Full profile = 1.5 hours. Or 600 ° C./7.5 min. Full profile = 1.5 hours.

(ii) forming chemical etching test ranges

The chemical etching test range shown in FIG. 7B was formed on the electrode pattern formed in the manner described above. Substantially, as shown in Fig. 7A, an adhesive tape 702 that can cover all the address electrodes was attached to the electrode pattern. Here, the adhesive tape was resistant to the acidic solution used for treating the electrode pattern in the later etching test. Subsequently, the adhesive tape 702 was cut into eight regions so that the adhesive tape on each region could be peeled off.

(iii) etching test

The etching test is described with reference to FIG. 8. First, the adhesive tape on the region (first region (1 in FIG. 7B)) to be subjected to the etching test of the test piece obtained in (ii) described above was peeled off to expose the address electrodes having respective line widths. I was. Subsequently, an acidic solution (0.6 to 0.7% HCl) was sprayed on the exposed portion of the address electrode on the test piece (etching period: 10 seconds) (Fig. 8 (A)).

Subsequently, the adhesive tape on the second region ((2) of FIG. 7B) was peeled off so that the address electrodes having respective line widths on the regions 1 and 2 were exposed. Subsequently, an acidic solution (0.6 to 0.7% HCl) was sprayed onto the exposed portion of the address electrode on the test piece (etching period: 10 seconds) (Fig. 8 (B)).

The method was repeated until zone 8 so that all zones were exposed to acidic solution (FIG. 8C). In this manner, the address electrodes having respective line widths were exposed to the etchant on the regions 1 to 8 for 10 to 80 seconds at 10 second intervals. That is, Zone 1 was exposed to the etchant for a total of 80 seconds, Zone 2 was exposed to the etchant for a total of 70 seconds, and Zones 3 to 7 were each exposed to the etchant for a total of 60 to 20 seconds at 10 second intervals. 8 was exposed to the etchant for a total period of 10 seconds.

The substrate was then washed with water.

(iv) evaluation

An evaluation method will be described with reference to FIGS. 9 and 10. Based on the method described in (iii), the adhesive tape 902 was attached to cover all the address electrodes on the finished test piece and the adhesive tape was peeled off (Fig. 9 (B)). By performing the above, the damaged electrode pattern portion was peeled off with the adhesive tape, detached from the substrate 302, and removed.

As shown in Fig. 9, the regions were numbered as 1 to 8 columns in the order of short etching periods, and it was examined whether any of the address electrodes having respective line widths on each region were missing. If one of several lines is missing in the address electrode having the respective line width, it was determined to be defective. Evaluation criteria are shown in Table 4.

Table 4 Evaluation Criteria domain Etching Period (sec) evaluation ◎ ○ △ × ×× 1 row 10 OK OK OK OK NG 2 rows 20 OK OK OK OK 3 row 30 OK OK OK NG NG 4 rows 40 OK OK OK NG NG 5 row 50 OK OK NG NG NG 6 rows 60 OK OK NG NG NG 7th row 70 OK NG NG NG NG 8 rows 80 OK NG NG NG NG

OK: no pattern is removed

NG: Some or all of the patterns are detached.

As shown in the above table, the test piece which did not detach any pattern in all regions was denoted by?, And the test piece which did not detach any pattern in the region exposed to the etching solution for 60 seconds or less was indicated by ○, and for 40 seconds or less A test piece in which no pattern was detached in the area exposed to the etchant was indicated by △, and a test piece in which no pattern was detached in the area exposed to the etchant for 20 seconds or less was indicated by ×, and the test piece in which the pattern was detached in all patterns Is represented by ××. According to the above evaluation criteria, it is judged that those evaluated by Δ to Δ would be appropriate for actual use.

<Result>

Table 5 shows the evaluation results of the conductive pastes obtained in Examples 1 to 8 based on the above-described evaluation criteria.

Sample Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Color of Ag top White White White White White White White White Color of board side White White White White White White White White Dried Thin Film (㎛) 8.0 ± 1.0 8.0 ± 1.0 8.0 ± 1.0 8.0 ± 1.0 8.0 ± 1.0 8.0 ± 1.0 8.0 ± 1.0 8.0 ± 1.0 Thin film after sintering (㎛) 3.0 ± 1.0 3.0 ± 1.0 3.0 ± 1.0 3.0 ± 1.0 3.0 ± 1.0 3.0 ± 1.0 3.0 ± 1.0 3.0 ± 1.0 Resolution (L / S) <30 μm <30 μm <30 μm <30 μm <30 μm <30 μm <30 μm <30 μm Etching durability ◎ ◎ ◎ ◎ ○ △ ○ ◎

Table 6 shows the evaluation results of the conductive pastes obtained in Comparative Examples 1 to 5 based on the above-described evaluation criteria.

Sample Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Color of Ag top White White White White White Color of board side White White White White White Dried Thin Film (㎛) 8.0 ± 1.0 8.0 ± 1.0 8.0 ± 1.0 10.0 ± 1.0 10.0 ± 1.0 Thin film after sintering (㎛) 3.0 ± 1.0 3.0 ± 1.0 3.0 ± 1.0 5.0 ± 1.0 5.0 ± 1.0 Resolution (L / S) <30 μm <30 μm <30 μm <30 μm <30 μm Etching durability ×× ×× × × ××

It was confirmed from Tables 5 and 6 that the conductive compositions of the present invention comprising silver powder and lead-containing glass frits having specific particle diameters have a high chemical etch durability in the etching process of forming the partition walls.

The present invention relates to compositions useful for electrodes comprising silver powder and lead-containing glass frits having a predetermined average particle diameter (average particle diameter is 1.0 to 2.5 μm). The composition of the present invention is a particularly useful conductive composition for the address electrode and can prevent damage to the address electrode during the chemical etching process in which the PDP is formed by chemical etching.

The conductive composition of the present invention comprises silver powder and lead-containing glass frit having an average particle diameter of 1.0 to 2.5 μm. The content ratio of lead-containing glass frit to silver powder is preferably from 0.75: 99.25 to 6.0: 94.0 by weight, more preferably from 1.5: 98.5 to 6.0: 94.0 by weight, or even more preferably from 1.5: 98.5 to 3.0: 97.0 by weight. to be. By adjusting the ratio in the above-described range, high chemical etching durability can be obtained in forming the partition wall.

Claims (6)

A conductive composition comprising silver powder and lead-containing glass frit having an average diameter of 1.0 to 2.5 μm. The conductive composition of claim 1, wherein the ratio of the lead-containing glass frit content to the silver powder content is between 0.75: 99.25 and 6.0: 94.0. The conductive composition of claim 1 or 2, wherein the softening point of the lead-containing glass frit is from 430 to 510 ° C. The conductive composition of claim 1, wherein the lead-containing glass frit comprises PbO, B ₂ O _3, and SiO ₂ . The conductive composition according to claim 1 or 2, wherein the partition of the plasma display is used for an address electrode when formed by chemical etching. An electrode formed using the conductive composition of claim 1.

Images