KR100791995B1 - Apparatus for providing gas and apparatus for forming a layer having the same - Google Patents

Abstract

An apparatus for providing gas and an apparatus for forming a layer having the same are provided to improve the injection efficiency of a process gas by forming two gas injection holes in one gas nozzle. A gas ring(110) has a shape of ring. The gas ring includes a first gas line(112) for supplying a first gas and a second gas line(114) for supplying a second gas. A plurality of gas nozzles(120) are connected to the gas ring. Each of the gas nozzles includes a first gas injection hole(122) and a second gas injection hole(124). The first gas injection hole is connected to the first gas line in order to inject the first gas. The second gas injection hole is connected to the second gas line in order to inject the second gas. The gas nozzles are arranged toward a center of the gas ring in the inside of the gas ring.

Description

Gas supply apparatus and film forming apparatus having the same {Apparatus for providing gas and apparatus for forming a layer having the same}

1 is a schematic cross-sectional view for explaining a conventional film forming apparatus.

FIG. 2 is a cross-sectional view for describing a gas supply unit illustrated in FIG. 1.

3 is a perspective view illustrating a gas supply device according to one embodiment of the present invention.

4 is a cross-sectional view for describing the gas supply device of FIG. 3.

5 is a cross-sectional view for describing the gas nozzle of FIG. 4.

6 is a cross-sectional view for describing a film forming apparatus including a gas supply unit according to one embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100: gas supply device 110: gas ring

112: first gas line 114: second gas line

116: first branch line 118: second branch line

120: gas nozzle 122: first gas injection hole

124: second gas injection hole 200: film forming apparatus

202 process chamber 204 chuck

210: gas supply part 212: gas ring

214: gas nozzle 230: gate door

240: vacuum providing unit 250: dome

260: coil electrode 262: high frequency power

The present invention relates to a gas supply apparatus and a film forming apparatus having the same, and more particularly, to a gas supply apparatus for supplying a process gas for processing a semiconductor substrate such as a silicon wafer and a film forming apparatus having the same.

In general, a semiconductor device such as a volatile or nonvolatile memory device may be manufactured by repeatedly performing various unit processes on a semiconductor substrate such as a silicon wafer. For example, a film forming process is performed to form various films such as an insulating film, a conductive film, a dielectric film, and the like on a semiconductor substrate, and an etching process is performed to form or remove films formed on the semiconductor substrate in a desired pattern. The photolithography process is performed to form an etch mask for forming desired patterns on the semiconductor substrate, and the ion implantation process or diffusion process is performed on the surface portion of the semiconductor substrate or on the electrical structure of the pattern structure formed on the semiconductor substrate. A planarization process such as a chemical mechanical polishing process or an etch back process may be performed to change the characteristics, and may be performed for planarization of the semiconductor substrate or a film formed thereon.

Examples of the film forming process include chemical vapor deposition, physical vapor deposition, atomic layer deposition, and the like, and the chemical vapor deposition includes thermal chemical vapor deposition, plasma enhanced chemical vapor deposition, and low pressure chemical vapor deposition.

1 is a schematic cross-sectional view for explaining a conventional film forming apparatus, and FIG. 2 is a cross-sectional view for explaining a gas supply unit shown in FIG. 1.

1 and 2, an apparatus 1 for performing the film forming process as described above includes a process chamber 2 and a chuck for supporting a semiconductor substrate W in the process chamber 2. 6) and a gas supply unit 10 for supplying a process gas for forming a film on the semiconductor substrate W into the process chamber 2.

The gas supply unit 10 includes a gas ring 12 made of aluminum for supplying a process gas provided from a gas source into the process chamber 2, and a plurality of gases provided on an inner surface of the gas ring 12. It may include nozzles 14.

The upper part of the process chamber 2 is open, and the gas ring 10 is disposed above the process chamber 2. In addition, the open top of the process chamber 2 may be covered by the dome 116.

As shown in FIG. 2, inside the gas ring 12, a first gas line 12a provided with a first process gas from the gas source and a second process gas provided with a second process gas different from the first process gas. Two gas lines 12b are provided. A plurality of gas nozzles 14 are mounted on the inner side of the gas ring 12 and are connected to the first gas line 12a and the first gas nozzle 14a and the second gas line 12b. And a second gas nozzle 14b connected thereto. The gas nozzles 142 form a group of one first gas nozzle 14a and two second gas nozzles 14b.

However, when the process gas is sprayed using the gas ring 12 and the gas nozzles 14 having the above configuration, the number of the gas nozzles 14 spraying the process gas is relatively small, The pressure of the process gas injected from the gas nozzles 14 is strong. Vortex is severely generated by the first process gas injected from the first gas nozzle 14a and the second process gas injected from the second gas nozzle 14b. Therefore, it is difficult for the first process gas and the second process gas to react uniformly, and it is difficult to uniformly form a film on the semiconductor substrate W. In addition, the impurity deposited in the gas nozzles 14 may be dropped onto the semiconductor substrate W due to the strong injection pressure, thereby acting as a particle.

Embodiments of the present invention provide a gas supply apparatus having a plurality of gas nozzles capable of injecting a process gas at low pressure.

Embodiments of the present invention provide a film forming apparatus having the gas supply device.

The gas supply device according to the present invention has a ring shape, and a gas ring and a first line having a first line for providing a first gas and a second line for providing a second gas different from the first gas are formed therein. A plurality of first gas injection holes connected to a gas line for injecting the first gas and a second gas injection hole connected to the second gas line for injecting the second gas, respectively; A gas nozzle.

According to an embodiment of the present invention, the gas nozzles may be disposed to face the center of the gas ring on the inner surface of the gas ring.

According to another embodiment of the present invention, the gas nozzles may be spaced apart from each other by a predetermined interval.

The film forming apparatus according to the present invention includes a chamber, a chuck, a dome and a gas supply part. The chamber is open at the top and provides a process space for processing the substrate. The chuck is disposed inside the chamber to support the substrate. The dome covers the top of the open chamber. The gas supply unit has a ring shape and is connected to the first gas line having a first line providing a first gas therein and a second line providing a second gas different from the first gas therein; And a plurality of gas nozzles connected to the gas ring and having a first gas injection hole for injecting the first gas and a second gas injection hole for injecting the second gas, respectively, connected to the second gas line. And a gas disposed between the chamber and the dome and providing gases for processing the substrate into the chamber.

According to an embodiment of the present invention, the film forming apparatus may further include a coil electrode disposed outside the dome and connected to a high frequency power source to form a process gas supplied into the chamber in a plasma state.

According to the embodiments of the present invention configured as described above, since two gas injection holes for injecting different process gases are formed in each gas nozzle, the pressure at which the process gas is injected from the respective gas nozzles can be lowered. Since the vortex of the injected process gas can be reduced, the first process gas and the second process gas can react uniformly, and a film can be uniformly formed on the semiconductor substrate. In addition, the impurity deposited in the gas nozzles may be prevented from falling onto the semiconductor substrate due to the strong injection pressure of the process gas.

Hereinafter, a gas injection apparatus and a film forming apparatus having the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the drawings, similar reference numerals are used for similar elements. In the accompanying drawings, the dimensions of the structures are shown in an enlarged scale than actual for clarity of the invention.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

3 is a perspective view illustrating a gas supply device according to one embodiment of the present invention, FIG. 4 is a cross-sectional view for describing the gas supply device of FIG. 3, and FIG. 5 is a view for explaining the gas nozzle of FIG. 4. It is a cross section.

3 to 5, the gas supply device 100 includes a gas ring 110 and a plurality of gas nozzles 120.

The gas ring 110 has a ring shape and includes a first gas line 112 and a second gas line 114 therein. The first gas line 112 provides a first gas. The second gas line 114 provides a second gas different from the first gas. The first gas line 112 and the second gas line 114 extend along the gas ring 110 and thus have a ring shape.

For example, as shown in FIG. 4, the first gas line 112 and the second gas line 114 are arranged side by side in the horizontal direction of the gas ring 110 inside the gas ring 110. Can be. As another example, the first gas line 112 and the second gas line 114 may be arranged side by side in the vertical direction of the gas ring 110 inside the gas ring 110.

Since the quantity of the gas lines 112 and 114 may vary according to the type of gas to be injected, the scope of the present invention is not limited by the quantity of the gas lines 112 and 114.

A plurality of first branch lines 116 branched from the first gas line 112 and extending toward the inner side surface of the gas ring 110 are formed. In addition, a plurality of second branch lines 118 branched from the second gas line 114 and extending toward the inner side surface are formed in the gas ring 110.

The gas nozzles 120 are disposed to face the center of the gas ring 110 on the inner surface of the gas ring 110. The gas nozzles 120 are spaced apart from each other by a predetermined interval. For example, the gas nozzles 120 may be directly screwed with the gas ring 110. As another example, the gas nozzles 120 and the gas ring 110 may be coupled using an adapter.

Each gas nozzle 120 has a first gas injection hole 122 and a second gas injection hole 124 therein. The first gas injection hole 122 is connected to the first branch line 116 of the first gas line 112 and injects the first gas toward the center of the gas ring 110. The second gas injection hole 124 is connected to the second branch line 118 of the second gas line 114 and injects the second gas toward the center of the gas ring 110.

The gas supply apparatus 100 according to the present invention has an effect of increasing the number of nozzles as compared to the conventional gas supply apparatus, and thus may spray a relatively large amount of the first gas and the second gas. In addition, the gas supply device 100 according to the present invention can supply the same amount of gas in a relatively fast time compared to the conventional gas supply device. Therefore, process efficiency can be improved using the said gas supply apparatus. In addition, when the same amount of gas is injected for the same time, the gas supply device 100 according to the present invention can supply the gas at a relatively low injection pressure than the conventional gas supply device. Vortex of the injected process gas can be reduced.

6 is a cross-sectional view for describing a film forming apparatus including a gas supply unit according to one embodiment of the present invention.

Referring to FIG. 6, the film forming apparatus 200 may be used to form a film on a semiconductor substrate W such as a silicon wafer.

The semiconductor substrate W may be disposed on the chuck 204 provided in the process chamber 202, and the film may be formed by the reaction of the process gas provided from the gas supply unit 210.

As the chuck 204, an electrostatic chuck that grips the semiconductor substrate W using an electrostatic force may be used. Although not shown in detail, the chuck 204 may be disposed to be movable in a vertical direction to perform the film forming process. have. That is, it may be connected to a vertical driver (not shown) to move up and down between a position for loading and unloading the semiconductor substrate W and a position for forming the film. In addition, a plurality of lift pins (not shown) for loading and unloading the semiconductor substrate W may be disposed to move up and down through the chuck 204.

A gate door 230 for entering and exiting the semiconductor substrate W is disposed at one side of the process chamber 202, and at the other side of the process chamber 202, a process pressure is applied to the inside of the process chamber 202. For example, a vacuum providing unit 240 for forming a vacuum may be connected to the process chamber 202 through a vacuum valve 242.

The vacuum providing unit 240 may include a vacuum pump for providing a vacuum in the process chamber 202 during the film forming process. As the vacuum pump, a low vacuum pump or a medium vacuum pump may be used according to the process pressure, and in some cases, a low vacuum pump and a high vacuum pump may be used together.

The process chamber 202 has an open upper portion, and a gas supply unit 210 for supplying a process gas for forming the film may be disposed in the open upper portion. In addition, a dome 250 may be disposed on the gas supply part 210 to cover the open upper portion, and the coil electrode 260 may be disposed to be adjacent to the dome 250. The coil electrode 260 may be connected to a high frequency power source 262, for example, a radio frequency (RF) power source, to form a process gas supplied into the process chamber 202 in a plasma state. 260 may be made of a material capable of transmitting the RF energy, for example, quartz.

As shown, the dome 250 does not have a perfect hemispherical shape, but the shape of the dome 250 does not limit the scope of the present invention, and also includes the process chamber 202, the chuck 204, and the like. The scope of the present invention is not limited by the shape of.

In addition, a direct current power source for generating an electrostatic force may be connected to the chuck 204, and a bias power source for controlling the behavior of a process gas formed in the plasma state may be connected to the chuck 204.

Although not shown in detail, the gas supply unit 210 may be connected to a gas source (not shown) that provides process gas (es) through an outer wall of the process chamber 202. The gas supply unit 210 may include a gas ring 212 and a plurality of gas nozzles 214. Detailed description of the gas supply unit 210 is substantially the same as the gas supply device 100 shown in Figs. 3 to 5, the detailed description thereof will be omitted.

For example, the gas ring 212 may provide a silicon source gas, and the second gas line 212b may provide an oxygen gas to form a silicon oxide layer. Since the quantity of the gas lines 212a and 212b may vary according to the type of film to be formed on the semiconductor substrate W, the scope of the present invention is limited by the quantity of the gas lines 212a and 212b. It won't work.

The gas injection unit 210 of the film forming apparatus 200 according to the present invention may inject a relatively large amount of process gas into the process chamber 202. In addition, the gas injection unit 210 may supply the process gas in a relatively fast time. Therefore, productivity of the said film forming apparatus 200 can be improved.

In addition, the gas injection unit 210 may supply the process gas at a relatively low injection pressure as compared to a conventional gas supply device. Since the vortices caused by the injected process gases can be reduced, the process gases can react uniformly, and a film can be uniformly formed on the semiconductor substrate. In addition, the impurity deposited in the gas nozzles may be prevented from falling onto the semiconductor substrate due to the strong injection pressure of the process gas.

As described above, according to embodiments of the present invention, the gas injection unit may improve the injection efficiency of the process gas by forming two gas injection holes in one gas nozzle. Therefore, productivity of the film forming apparatus containing the said gas injection part can be improved. In addition, the gas injection unit may reduce the generation of vortex by lowering the injection pressure of the process gas. Therefore, the uniformity of the film formed on the semiconductor substrate can be improved, and particle generation due to the vortex can be prevented.

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (5)

A gas ring having a ring shape and having a first line providing a first gas therein and a second line providing a second gas different from the first gas; And A first gas injection hole connected to the first gas line to inject the first gas and a second gas injection hole connected to the second gas line to inject the second gas, respectively, and connected to the gas ring And a plurality of gas nozzles. The gas supply apparatus of claim 1, wherein the gas nozzles are disposed on an inner side of the gas ring to face the center of the gas ring. The gas supply apparatus of claim 1, wherein the gas nozzles are spaced apart from each other by a predetermined interval. A chamber that is open at the top and provides a process space for processing the substrate; A chuck disposed within the chamber to support the substrate; A dome covering an upper portion of the open chamber; And A gas ring having a ring shape and having a first line providing a first gas therein and a second line providing a second gas different from the first gas, and connected to the first gas line And a plurality of gas nozzles connected to the gas ring and having a first gas injection hole for injecting a gas and a second gas injection hole for injecting the second gas, respectively, connected to the second gas line. And a gas supply disposed between the domes to provide gases for processing the substrate into the chamber. The film forming apparatus of claim 4, further comprising a coil electrode disposed outside the dome and connected to a high frequency power source to form a process gas supplied into the chamber in a plasma state.

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