KR100789579B1 - Method for manufacturing cmos image sensor - Google Patents

Method for manufacturing cmos image sensor Download PDF

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KR100789579B1
KR100789579B1 KR1020060082455A KR20060082455A KR100789579B1 KR 100789579 B1 KR100789579 B1 KR 100789579B1 KR 1020060082455 A KR1020060082455 A KR 1020060082455A KR 20060082455 A KR20060082455 A KR 20060082455A KR 100789579 B1 KR100789579 B1 KR 100789579B1
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pad
layer
gas
image sensor
cmos image
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KR1020060082455A
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Korean (ko)
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김승현
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동부일렉트로닉스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing

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  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

A method for manufacturing a CMOS image sensor is provided to remove effectively an F component by performing additionally an F composition removal process. An interlayer dielectric(120) is formed on a substrate(110) including a unit pixel region and a pad region. A pad(130) and a pad protection layer are sequentially formed by etching the interlayer dielectric of the pad region. A color filter layer and a planarization layer are sequentially formed on the interlayer dielectric of the unit pixel region. A micro-lens(160) is formed on the planarization layer. The pad protection layer is removed to open the pad of the substrate including the micro-lens. In the process for removing the pad protection layer, an F-containing compound(150) generated from the pad is removed by using a plasma gas as a mixed gas of an Ar gas and an H2 gas at the temperature of 200 degrees centigrade and below, in chamber for removing the pad protection layer. A package process is performed by using the pad.

Description

씨모스 이미지 센서의 제조방법{Method for Manufacturing CMOS Image Sensor} Method for Manufacturing CMOS Image Sensor

도 1은 종래기술에 의한 경우, 패드 위의 성분분석표.1 is a component analysis table on the pad, according to the prior art.

도 2는 종래기술에 의한 경우, 패드의 크랙을 나타내는 사진.Figure 2 is a photograph showing the crack of the pad, according to the prior art.

도 3 내지 도 5는 본 발명의 실시예에 따른 씨모스 이미지 센서의 제조방법에 대한 제조공정의 단면도.3 to 5 are cross-sectional views of a manufacturing process for a method of manufacturing a CMOS image sensor according to an embodiment of the present invention.

<도면의 주요 부분에 대한 설명>Description of the main parts of the drawing

110: 기판 120: 층간절연층110 substrate 120 interlayer insulating layer

130: 패드 140: 패드 보호막130: pad 140: pad protective film

145: F함유 화합물 150: 컬러필터층145: F-containing compound 150: color filter layer

160: 마이크로렌즈160: microlens

본 발명은 씨모스 이미지 센서의 제조방법에 관한 것이다.The present invention relates to a method of manufacturing a CMOS image sensor.

일반적으로, 이미지 센서(Image sensor)는 광학적 영상(optical image)을 전기적 신호로 변환시키는 반도체 소자로써, 크게 전하결합소자(charge coupled device: CCD)와 씨모스(CMOS; Complementary Metal Oxide Silicon) 이미지 센서(Image Sensor)(CIS)로 구분된다.In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal, and is largely a charge coupled device (CCD) and a CMOS (Complementary Metal Oxide Silicon) image sensor. It is divided into (Image Sensor) (CIS).

한편, CCD는 구동 방식이 복잡하고, 전력 소비가 클 뿐만 아니라, 다단계의 포토 공정이 요구되므로 제조 공정이 복잡한 단점을 갖고 있으므로, 최근에는 상기 전하 결합 소자의 단점을 극복하기 위한 차세대 이미지 센서로서 씨모스 이미지 센서가 주목을 받고 있다.On the other hand, the CCD has a complex driving method, a large power consumption, and requires a multi-stage photo process, so that the manufacturing process has a complex disadvantage. Recently, the CCD is used as a next-generation image sensor to overcome the disadvantage of the charge coupling device. Morse image sensor is attracting attention.

씨모스 이미지 센서는 단위 화소 내에 포토 다이오드와 모스 트랜지스터를 형성시킴으로써 스위칭 방식으로 각 단위 화소의 전기적 신호를 순차적으로 검출하여 영상을 구현한다.In the CMOS image sensor, a photo diode and a MOS transistor are formed in a unit pixel to sequentially detect an electrical signal of each unit pixel in a switching manner to implement an image.

한편, 종래기술에 의한 CIS 제조공정은 패드오염(Pad Corrosion)을 방지하기 위해, 터미널 비아(Terminal Via) 형성 공정 후, Pad보호막을 형성한다.Meanwhile, the CIS manufacturing process according to the prior art forms a pad protective film after a terminal via forming process in order to prevent pad contamination.

그 후, 컬러필터 형성공정과 마이크로 렌즈(ML)공정이 진행된 다음, 상기 Pad 위의 보호막을 제거하여 패드를 완전히 오픈하는 공정(Process)로 진행한다.Thereafter, the color filter forming process and the micro lens ML process are performed, and then the protective film on the pad is removed to proceed to the process of completely opening the pad.

그런데, 도 1과 같이, 종래기술에 의할 경우 상기 패드를 오픈하는 파이널 반응이온성 식각시(Final RIE), F(플로린)성분이 함유된 케미컬(Chemical)을 사용하게 되는데, 이때 Pad 위에 F성분이 존재할 수 있다.However, as shown in FIG. 1, in the case of the prior art, when the final reactive ion etching to open the pad (Final RIE), chemical (Fhemical) containing F (Florin) component is used. Ingredients may be present.

그런데, 이러한 패드 위의 F성분은 도 2과 같이, Pad의 크랙(Crack) 및 F 성분으로 인한 본딩페일(Bonding Fail)을 유발할 수 있는 문제가 있다.However, as shown in FIG. 2, the F component on the pad has a problem that may cause bonding failure due to cracks and F components of the pad.

본 발명은 Pad보호막을 사용하는, CIS제품일 경우, 마이크로렌즈 공정 후, Pad를 완전히 오픈할 때 사용 되는 CFx형태의 케미컬(Chemical)로 인해, Pad위에 F성분이 존재하게 되는데, 이러한 F성분을 제거함으로써, 반도체 소자 또는 CIS제품의 Pad에 크랙(Crack) 및 본딩페일(Bonding Fail)이 발생하는 것을 방지할 수 있는 씨모스 이미지 센서의 제조방법을 제공함에 그 목적이 있다.In the present invention, in the case of a CIS product using a pad protective film, due to the CFx type chemical used when the pad is completely opened after the microlens process, the F component is present on the pad. It is an object of the present invention to provide a method of manufacturing a CMOS image sensor which can prevent cracks and bonding fail from occurring in a pad of a semiconductor device or a CIS product.

상기의 목적을 달성하기 위한 본 발명에 따른 씨모스 이미지 센서의 제조방법은 단위화소영역과 패드영역을 포함하는 기판상에 층간절연층을 형성하는 단계; 상기 패드영역의 층간절연층을 식각하여 패드와 패드보호막을 순차적으로 형성하는 단계; 상기 단위화소영역의 층간절연층 위에 컬러필터층과 평탄화층을 순차적으로 형성하는 단계; 상기 평탄화층 위에 마이크로렌즈를 형성하는 단계; 상기 마이크로렌즈가 형성된 기판의 패드가 오픈되도록 상기 패드보호막을 제거하는 단계; 상기 패드보호막 제거시 패드 상에 발생하는 F함유 화합물을 플라즈마 가스에 의해 제거하는 단계; 및 상기 F함유 화합물이 제거된 패드를 이용하여 패키지를 실시하는 단계;를 포함하는 것을 특징으로 한다.According to another aspect of the present invention, there is provided a method of manufacturing a CMOS image sensor, the method including: forming an interlayer insulating layer on a substrate including a unit pixel area and a pad area; Etching the interlayer insulating layer of the pad region to sequentially form a pad and a pad protection layer; Sequentially forming a color filter layer and a planarization layer on the interlayer insulating layer of the unit pixel region; Forming a microlens on the planarization layer; Removing the pad protection layer to open the pad of the substrate on which the microlens is formed; Removing the F-containing compound generated on the pad by the plasma gas when the pad protective layer is removed; And carrying out a package using the pad from which the F-containing compound has been removed.

본 발명에 따른 씨모스 이미지 센서의 제조방법에 의하면 Pad보호막을 사용하는, CIS제품일 경우, 마이크로렌즈 공정 후, Pad를 완전히 오픈할 때 사용되는 CFx형태의 케미컬(Chemical)로 인해, Pad위에 F성분이 존재하게 되는데, 이러한 F성분을 제거하는 공정을 추가함으로써, CIS제품의 Pad가 크랙(Crack) 및 본딩페일(Bonding Fail)이 발생하는 것을 방지할 수 있는 장점이 있다.According to the method for manufacturing a CMOS image sensor according to the present invention, in the case of a CIS product using a pad protective film, a CFx type chemical is used when the pad is completely opened after the microlens process. There is an ingredient, by adding a process for removing such an F component, there is an advantage that the pad of the CIS product can prevent cracking and bonding fail (Bonding Fail) occurs.

이하, 본 발명의 실시예에 씨모스 이미지 센서의 제조방법의 실시예를 첨부 된 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings an embodiment of a method for manufacturing a CMOS image sensor in an embodiment of the present invention will be described in detail.

본 발명의 실시예에 씨모스 이미지 센서의 제조방법은 층간절연층을 형성하는 단계; 패드와 패드보호막을 순차적으로 형성하는 단계; 컬러필터층과 평탄화층을 순차적으로 형성하는 단계; 마이크로렌즈를 형성하는 단계; 패드보호막을 제거하는 단계; F함유 화합물을 플라즈마 가스에 의해 제거하는 단계; 및 상기 오픈된 패드를 이용하여 패키지를 실시하는 단계;를 포함할 수 있다.In an embodiment of the present invention, a method of manufacturing a CMOS image sensor may include forming an interlayer insulating layer; Sequentially forming the pad and the pad protective layer; Sequentially forming the color filter layer and the planarization layer; Forming a microlens; Removing the pad protective film; Removing the F-containing compound by plasma gas; And performing a package using the opened pad.

우선, 도 3과 같이, 단위화소영역과 패드영역을 포함하는 기판(110)상에 층간절연층(120)을 형성한다. 상기 층간절연층(120)은 다층으로 형성될 수도 있고, 도시되지 않았지만, 하나의 층간절연층을 형성한 후에 포토다이오드(미도시) 부분으로 빛이 입사되는 것을 막기 위한 차광층(미도시)을 형성한 후에 다시 층간절연층을 형성할 수 있다.First, as shown in FIG. 3, an interlayer insulating layer 120 is formed on a substrate 110 including a unit pixel area and a pad area. The interlayer insulating layer 120 may be formed in multiple layers, and although not shown, a light shielding layer (not shown) may be formed to prevent light from being incident on a photodiode (not shown) after forming one interlayer insulating layer. After the formation, the interlayer insulating layer may be formed again.

또한, 상기 기판(110)에는 적어도 하나 이상 형성되어 입사되는 광량에 따른 전하를 생성하는 포토 다이오드(미도시)들이 형성되어 있을 수 있다.In addition, at least one photodiode (not shown) may be formed on the substrate 110 to generate a charge according to the amount of incident light.

다음으로, 상기 패드영역의 층간절연층(120)을 식각하여 패드(130)와 패드보호막(140)을 순차적으로 형성한다. 상기 패드(130)는 Al 등의 금속을 형성될 수 있다. 상기 패드보호막(140)은 산화막으로 형성할 수 있다.Next, the interlayer insulating layer 120 of the pad region is etched to sequentially form the pad 130 and the pad protection layer 140. The pad 130 may be formed of metal such as Al. The pad protection layer 140 may be formed of an oxide film.

다음으로, 상기 단위화소영역의 층간절연층(120) 위에 컬러필터층(150)과 평탄화층(미도시)을 순차적으로 형성한다. 상기 컬러필터층(150)은 가염성 레지스트를 사용하여 도포 및 패터닝 공정을 진행하여 각각의 파장대별로 빛을 필터링하는 R, G, B의 컬러필터층(150)들을 형성한다. 여기서, 상기 컬라필터층(150)은 적 색(R), 녹색(G), 청색(B) 칼라 레지스트층을 선택적으로 세 번에 걸쳐서 포토리소그래피(photo lithography) 공정을 행하여 각각 적색(R), 녹색(G), 청색(B) 컬러필터를 형성하여 컬러필터층(150)을 완성할 수 있다.Next, the color filter layer 150 and the planarization layer (not shown) are sequentially formed on the interlayer insulating layer 120 of the unit pixel region. The color filter layer 150 may be coated and patterned using a salt resist to form color filter layers 150 of R, G, and B that filter light for each wavelength band. Here, the color filter layer 150 is subjected to a photolithography process three times selectively with red (R), green (G), and blue (B) color resist layers, respectively (R) and green. The color filter layer 150 may be completed by forming the (G) and blue (B) color filters.

다음으로, 상기 평탄화층 위에 마이크로렌즈(160)를 형성한다. 상기 마이크로렌즈(160)는 소정의 감광막 패턴(미도시)을 형성한 후, 상기 마이크로렌즈 패턴 내에 존재하는 PAC(Photo Active Compound)의 흡수율을 표백하기 위해 전면 노광(flood exposure) 처리를 한다. 그리고, 상기 마이크로렌즈 패턴을 약 300 ~ 700℃ 온도에서 리플로우하여 다수개의 마이크로렌즈(160)를 형성할 수 있다. Next, the microlens 160 is formed on the planarization layer. After forming a predetermined photoresist pattern (not shown), the microlens 160 performs a floor exposure process to bleach the absorption rate of the PAC (Photo Active Compound) present in the microlens pattern. The microlens pattern may be reflowed at a temperature of about 300 to 700 ° C. to form a plurality of microlenses 160.

다음으로, 도 4와 같이, 상기 마이크로렌즈(160)가 형성된 기판(110)의 패드(130)가 오픈되도록 상기 패드보호막(140)을 제거한다. Next, as shown in FIG. 4, the pad protection layer 140 is removed to open the pad 130 of the substrate 110 on which the microlens 160 is formed.

이때, 마이크로렌즈(160) 형성 후 패드(130)를 완전히 오픈하기 위해 반응이온성 식각(RIE)를 진행하면, 그림 4에서 볼 수 있듯이, 패드(130)에 패드보호막(140) 제거시 사용되는 CFx의 케미컬(Chemical)에 의해, F함유 화합물(145)이 형성된다.In this case, when the reactive ion etching (RIE) is performed to completely open the pad 130 after the formation of the microlens 160, as shown in FIG. 4, the pad 130 is used to remove the pad protective layer 140 from the pad 130. By the chemical of CFx, F-containing compound 145 is formed.

이러한 F함유 화합물(145)은 도 2에서 볼 수 있듯이, 패드의 크랙(Crack) 및 본딩페일(Bonding Fail)을 유발할 수 있다.As shown in FIG. 2, the F-containing compound 145 may cause cracking and bonding fail of the pad.

그러므로, 도 5과 같이, 상기 패드보호막(140) 제거시 패드 상에 발생하는 F함유 화합물(145)을 플라즈마 가스에 의해 제거한다.Therefore, as shown in FIG. 5, the F-containing compound 145 generated on the pad when the pad protective layer 140 is removed is removed by the plasma gas.

상기 플라즈마 가스는 Ar 가스, H2 가스 또는 Ar 가스 및 H2 가스의 혼합가스를 사용할 수 있다.As the plasma gas, Ar gas, H 2 gas, or a mixed gas of Ar gas and H 2 gas may be used.

상기 Ar 가스를 단독으로 사용하는 경우, 50 sccm 이상으로, H2 Gas를 단독으로 사용하는 경우는 50 sccm 이상으로, 또한 Ar 가스 및 H2 가스의 혼합가스를 사용하는 경우 그 혼합가스의 양이 50 sccm 이상인 것이 바람직하다.When using the Ar gas alone, 50 sccm or more, when using the H 2 Gas alone 50 sccm or more, and when using the mixed gas of Ar gas and H 2 gas amount of the mixed gas It is preferable that it is 50 sccm or more.

상기 플라즈마 가스의 양이 50 sccm 이상이어야 F 성분을 효과적으로 제거할 수 있으며, 그보다 작은 양에서는 F 성분을 제거하기가 어려운 문제가 있다.When the amount of the plasma gas is 50 sccm or more, the F component can be effectively removed, and in smaller amounts, it is difficult to remove the F component.

또한, 상기 F함유 화합물(145)을 제거하는 단계는 200℃ 이하에서 진행할 수 있다. 만약, 200℃ 초과온도에서 공정진행시 마이크로렌즈(160)에 영향을 미치어 특성이 악화하는 문제가 발생한다.In addition, the step of removing the F-containing compound 145 may be carried out at 200 ℃ or less. If the process proceeds at a temperature exceeding 200 ° C., the microlens 160 may be affected to deteriorate characteristics.

또한, 상기 F함유 화합물(145)을 제거하는 단계는 상기 패드보호막(140) 제거하는 체임버에서 진행함으로써, 특별한 공정장비가 필요없이 간단하고 효과적으로 상기 F함유 화합물(145)을 제거함으로써 CIS제품의 Pad가 크랙(Crack) 및 본딩페일(Bonding Fail)이 발생하는 것을 방지할 수 있는 효과가 있다.In addition, the step of removing the F-containing compound 145 is carried out in the chamber for removing the pad protective film 140, the pad of the CIS product by simply and effectively removing the F-containing compound 145 without the need for special process equipment There is an effect that can prevent the occurrence of cracks and bonding failures (Crack).

다음으로, 상기 F함유 화합물이 제거된 패드(130)이용하여 패키지를 실시하는 단계를 진행할 수 있다.Next, the step of carrying out the package using the pad 130 from which the F-containing compound is removed can proceed.

이상에서 설명한 본 발명은 전술한 실시예 및 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경할 수 있다는 것은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and drawings, and it is common knowledge in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be apparent to those who have

이상에서 설명한 바와 같이 본 발명에 따른 씨모스 이미지 센서의 제조방법에 의하면 Pad보호막을 사용하는 CIS제품일 경우, 마이크로렌즈 공정 후, Pad를 완전히 오픈할 때 사용되는 CFx형태의 케미컬(Chemical)로 인해, Pad위에 F성분이 존재하게 되는데, 이러한 F성분을 제거하는 공정을 추가함으로써, CIS제품의 Pad에 크랙(Crack) 및 본딩페일(Bonding Fail)이 발생하는 것을 방지할 수 있는 효과가 있다.As described above, according to the method of manufacturing the CMOS image sensor according to the present invention, in the case of the CIS product using the pad protective film, the CFx type chemical used when the pad is completely opened after the microlens process is used. , The F component is present on the pad, by adding a process for removing the F component, there is an effect that can prevent the cracks and bonding fail to occur in the pad of the CIS product.

또한, 본 발명에 의하면 추가되는 F성분을 제거하는 공정이 Pad 오픈(Open) 공정 시 사용되는 체임버(Chamber)에서 바로 진행되기 때문에 종래진행되는 공정장비와 공정단계를 그대로 채용하여 시간과 경제적으로 별도의 부담이 없으면서 효과적으로 F성분을 제거함으로써, CIS제품의 Pad에 크랙(Crack) 및 본딩페일(Bonding Fail)이 발생하는 것을 방지할 수 있는 효과가 있다.In addition, according to the present invention, since the process of removing the added F component proceeds directly from the chamber used in the pad opening process, the process equipment and the process steps conventionally adopted as it are, are employed to separate time and economically. By removing the F component effectively without burden of, there is an effect that can prevent the occurrence of cracks and bonding fail on the pad of the CIS product.

Claims (7)

단위화소영역과 패드영역을 포함하는 기판상에 층간절연층을 형성하는 단계;Forming an interlayer insulating layer on the substrate including the unit pixel area and the pad area; 상기 패드영역의 층간절연층을 식각하여 패드와 패드보호막을 순차적으로 형성하는 단계;Etching the interlayer insulating layer of the pad region to sequentially form a pad and a pad protection layer; 상기 단위화소영역의 층간절연층 위에 컬러필터층과 평탄화층을 순차적으로 형성하는 단계;Sequentially forming a color filter layer and a planarization layer on the interlayer insulating layer of the unit pixel region; 상기 평탄화층 위에 마이크로렌즈를 형성하는 단계;Forming a microlens on the planarization layer; 상기 마이크로렌즈가 형성된 기판의 패드가 오픈되도록 상기 패드보호막을 제거하는 단계;Removing the pad protection layer to open the pad of the substrate on which the microlens is formed; 상기 패드보호막 제거시 패드 상에 발생하는 F함유 화합물을 Ar 가스 및 H2 가스의 혼합가스인 플라즈마 가스에 의해 200℃ 이하에서 제거하는 단계; 및Removing the F-containing compound generated on the pad when the pad protective film is removed at 200 ° C. or lower by a plasma gas which is a mixture of Ar gas and H 2 gas; And 상기 F함유 화합물이 제거된 패드를 이용하여 패키지를 실시하는 단계;를 포함하는 것을 특징으로 하는 씨모스 이미지 센서의 제조방법.And carrying out a package by using the pad from which the F-containing compound has been removed. 삭제delete 삭제delete 삭제delete 제1 항에 있어서,According to claim 1, 상기 F함유 화합물을 제거하는 단계는Removing the F-containing compound 상기 패드보호막 제거하는 체임버에서 진행하는 것을 특징으로 하는 씨모스 이미지 센서의 제조방법.The manufacturing method of the CMOS image sensor, characterized in that in the chamber to remove the pad protective film. 삭제delete 제1 항에 있어서,According to claim 1, 제1 항에 있어서,According to claim 1, 상기 플라즈마 가스는 The plasma gas is 50 sccm 이상인 것을 특징으로 하는 씨모스 이미지 센서의 제조방법.Method for producing a CMOS image sensor, characterized in that more than 50 sccm.
KR1020060082455A 2006-08-29 2006-08-29 Method for manufacturing cmos image sensor KR100789579B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990057286A (en) * 1997-12-29 1999-07-15 김영환 Method of manufacturing input / output pad of semiconductor device
KR20010053646A (en) * 1999-12-01 2001-07-02 박종섭 Method of opening pad
KR20060078356A (en) * 2004-12-31 2006-07-05 동부일렉트로닉스 주식회사 Method for manufacturing of cmos image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990057286A (en) * 1997-12-29 1999-07-15 김영환 Method of manufacturing input / output pad of semiconductor device
KR20010053646A (en) * 1999-12-01 2001-07-02 박종섭 Method of opening pad
KR20060078356A (en) * 2004-12-31 2006-07-05 동부일렉트로닉스 주식회사 Method for manufacturing of cmos image sensor

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