KR100788266B1 - Electronic part, electronic equipment, process for producing electronic part and electronic optical part - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to metal alloy materials, electronic and metal materials processing methods, and electronic optical components used in electronic components and electronic devices or products thereof. For example, liquid crystal display devices, various semiconductor products or components, and printed wirings. It is applied to substrates and other IC chip parts, and has a lower resistivity and superior processability in the manufacturing process, and a metal alloy material for electronic parts, electronic parts and electronic devices using the metal material. to provide.

Cu is contained as a main component, 0.1 to 7.0 wt% of W, and 0.1 to 3.0 wt% of one or more elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si in total The alloy formed is applied as a metal material. According to this metal material, the weather resistance of the whole Cu can be improved by adding W to Cu and mixing Mo uniformly in Cu grain boundary.

Description

ELECTRONIC PART, ELECTRONIC EQUIPMENT, PROCESS FOR PRODUCING ELECTRONIC PART AND ELECTRONIC OPTICAL PART}

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to metal materials, electronic and metal material processing methods and electronic optical parts used in electronic parts and electronic devices or products thereof, and for example, liquid crystal display devices, various semiconductor products or parts, printed wiring boards. And other IC chip components. The present invention also relates to a metal material for electronic parts, which has a low resistivity compared to the prior art, and which has superior advantages in the manufacturing process and is excellent in workability, an electronic part using the metal material, an electronic device, and the like.

In conventional electronic devices and electronic components, metal materials made of pure metals such as Cu, Al, Ti, Mo, Ta, W, Cr, and the like in wiring materials, electrode materials, and contact materials, Al-Cu, Al-Cu-Si, Electrodes or wiring patterns were formed using metal materials made of alloys such as Ag-Pd, TaSi, WSi, TiN, and the like.

For example, in the transmissive liquid crystal display device constituting the flat panel display, pure Al or Al alloy having excellent etching property and low electric resistance is generally used as the wiring material. However, pure Al has a low melting point of 660 ° C. and is used as a wiring material of a liquid crystal display device. When Al is used as a wiring material for a liquid crystal display device, pure Al has a temperature of about 300 to 500 ° C. in a chemical vapor deposition (CVD) process after formation of a wiring film. In the heat treatment step, defects such as hygrox and whiskers may occur. In addition, Al is chemically unstable with respect to oxygen, and its heat resistance is unstable with respect to the highest temperature in the process of manufacturing a transmissive liquid crystal display. For this reason, when Al is used for an electrode or a material for wiring formation, in order to solve these instability, it is necessary to form a protective layer or a barrier layer extraly, and the process becomes complicated or the process amount increases. have. However, since Al has a very high advantage compared with other metals rather than the low electrical resistance, and the manufacturing process is also high, the development of a substitute material is not advanced. For this reason, in the liquid crystal display device, the wiring structure in which pure Al is sandwiched by Ta, Mo, Cr, W, etc., which are stable at high temperatures, is intended to solve the problems and defects of Al wiring.

In the semiconductor device, pure Cu is used as an electrode and a wiring material, and as a substitute for pure Al, or partly used. However, pure Cu has very high electrical conductivity, but in a manufacturing process using the same, for example, when the wiring pattern is processed by etching, it is impossible to process it physically unless it is a high temperature, or the oxide film of Si It has a problem of chemically reacting and diffusing to the Si layer to destroy the function of the semiconductor device. Moreover, since pure Cu has low adhesiveness of the base material of a metal base or an oxide film, it has been confirmed that it has a subject with respect to the technical progress, such as refinement | miniaturization, such as the need for the layer which promotes adhesion | attachment to the base additionally. In addition, pure Cu is agglomerated after heat treatment, irregularities are formed on the surface of the film, and there are problems of flatness and smoothness, and there is a situation in which technical progress or innovation is required.

However, if a metal material having low electrical resistance, heat resistance, and excellent workability can be obtained as compared to the metal material used in the conventional electronic device, it can be applied to various electronic parts to improve performance and simplify the manufacturing process. I think it is possible.

In other words, in the transmissive liquid crystal display device, Ti, Ta, Mo, Cr, W, etc., which are used in place of pure Al for the purpose of preventing the occurrence of defects, have a higher resistivity than pure Al as shown in Table 1. have. As a result, in the transmissive liquid crystal display panel, the wiring length of the wiring pattern is increased due to the increase in size, the high precision, and the high precision, and when the wiring pattern is miniaturized, there is a problem that it is difficult to drive simply and reliably. Therefore, in a transmissive liquid crystal display panel, it was the situation that a material suitable as a wiring material does not exist.

Table 1

material Resistivity [μΩcm] Chemical resistance Anodization Mo 50 weakness Impossible Cr 12.9 Slightly good Impossible Ti 55 Good Impossible Ta 13.6 Good possible Al 2.7 weakness possible Cu 1.7 weakness Impossible Ag 1.6 Slightly good Impossible Au 2.3 Good Impossible

Incidentally, when examining the wiring material having a low resistance value, there are Au, Cu, and Ag as materials having a lower resistivity than Al, but because Au is very expensive in terms of price, it not only presses manufacturing costs but also weather resistance. It is inferior, and has the problem that the workability by etching is bad and microprocessing is difficult. Ag also reacts sensitively to chlorides, sulfur, sulfides, and the like, and has problems in micromachinability and weather resistance, and when used as a wiring or an electrode, Ag reacts to stability during the process such as aggregation of the surface layer by heat treatment. Since there are a lot of problems, there are many restrictions in the employment, the balance with the problem is questioned about the superiority, and the present situation is that the practicality is low.

In the various manufacturing processes in which Cu reacts sensitively, for example, in contact with an oxygen atom deposited on a substrate material, for example, an Si oxide film on a Si wafer, or in an environment containing water or other oxygen, Cu reacts with oxygen in an environment including the atmosphere to form CuOx on the surface or interface of the wiring pattern, and the CuOx damages the positive conductivity and thermal conductivity of the original Cu.

In addition, as an example in which Cu has a problem in weather resistance, when applied to a liquid crystal display device, CuOx is formed by reacting with oxygen or the like by direct contact with a transparent conductive film to form CuOx, resulting in unstable physical properties of the liquid crystal display device. It is becoming difficult to secure. For this reason, this problem is solved by forming a barrier layer in the base layer or sandwiching the barrier layer in the same manner as in Al, but in this case, while the technical superiority is recognized, it is difficult to reduce the manufacturing cost, There is a current situation that has not been put to practical use.

In these liquid crystal display devices, TFTs (Thin Film Transistors) made of amorphous silicon or polycrystalline silicon are often used as driving devices. However, there is no situation in which suitable electrode materials have been developed on the driving device side.

In other words, in some of these drive devices, the manufacturing process is simplified by oxidizing the metal material of the electrode and forming a gate insulating film between the electrode and the silicon active element (that is, anodizing).

Among the wiring materials shown in Table 1, as wiring materials which can form such a gate insulating film, there are Al and Ta. In particular, in the case of Ta, an oxide insulating film having a high yield with few defects such as pinholes can be formed. However, in Ta, since the resistivity is high, in the case of such anodization, it is necessary to have an electrode structure by a two-layer wiring using Al having a low resistivity, thus increasing the manufacturing process. In the case of this two-layer wiring, the resistivity of the wiring pattern eventually becomes a resistivity determined by Al.

In addition to the above-described application to display devices, in semiconductor devices such as DRAM, flash memory, CPU, MPU, and ASIC, the wiring width is narrowed for high integration, and the wiring size is increased due to the increase in chip size and the complexity of multilayer wiring. The wiring length of the pattern tends to be increased. Thereby, also in these semiconductor devices, the wiring material which is low resistivity, stable with heat, and excellent in workability is calculated | required.

That is, such a reduction in wiring width and increase in wiring length lead to an increase in resistance in the wiring, and the increase in the resistance causes a voltage drop in the wiring to increase, thereby lowering the driving voltage of the device. The power consumption is increased, and a delay occurs in signal transmission by wiring.

Moreover, Cu, Ag, etc. are used for wiring materials, electrode materials, and contact materials in electronic components other than such a semiconductor device, for example, a printed wiring board, a chip capacitor, and a relay. However, these materials also have a problem that weatherability is still insufficient in practical use and that recycling is difficult.

For this reason, the inventors of the present invention attempted to solve these problems by an alloy formed by adding other than Mo to the pure Cu by the invention of Japanese Patent Laid-Open No. 2004-91907 (P 2004-91907A). Because they vary widely from manufacturer to manufacturer, they are not necessarily all-round but thought that continuity of further progress and technological innovation is necessary.

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above points, and has a lower resistivity and is more stable against heat and excellent in workability, and an electronic part, an electronic device, an electronic optical part, and an electronic part using the metal material. It is to propose a manufacturing method and a processing method of a metal material.

In order to solve such a subject, the electronic component metal material which concerns on this invention is an electronic component metal material which has Cu as a main component,

0.1-7.0 wt% of W;

It is characterized by consisting of an alloy comprising 0.1 to 3.0 wt% of a plurality of elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si in total.

According to the said metal material for electronic components, weather resistance of the whole Cu can be improved by adding W to Cu and mixing W uniformly in the grain boundary of Cu. In addition, the resistivity can be lowered by adding a plurality of elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si. Moreover, the ratio of the increase of resistivity by adding W which is a 2nd element can be suppressed by this 3rd element. At this time, weather resistance can be improved by making these added elements into 0.1 to 3.0 wt%. Therefore, the metal material for electronic components which is low resistivity compared with the past, stable with heat, and excellent in workability can be obtained.

An electronic component metal material according to the present invention is an electronic component metal material containing Cu as a main component, and is made of an alloy containing 0.1 to 7.0 wt% of W.

It is confirmed that the said metal material for electronic components is low resistivity compared with the past, and is stable with heat, and excellent in workability.

In the electronic component metal material according to the present invention, it is also possible that the electronic component metal material has an electrical resistivity of 10 μΩcm or less.

The metal material for electronic components which concerns on this invention is a metal material for electronic components which has Cu as a main component,

0.1-7.0 wt% of W;

It is characterized by consisting of a ternary alloy comprising 0.1 to 3.0 wt% of one element selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si.

According to the said metal material for electronic components, the weatherability of the whole Cu can be improved by adding W to Cu and mixing W uniformly at the grain boundary of Cu. In addition, the resistivity can be lowered by adding one element selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si. Moreover, the ratio of the increase of resistivity by adding W which is a 2nd element can be suppressed by this 3rd element. At this time, weather resistance can be improved by making these added elements into 0.1 to 3.0 wt%. Therefore, the metal material for electronic components which is low resistivity compared with the past, stable with heat, and excellent in workability can be obtained.

In the metal material for electronic components according to the present invention, it is also possible for the metal material for electronic components to have an electrical resistivity of 1.5 μΩcm or more and 7.0 μΩcm or less.

In the electronic component metal material according to the present invention, the electronic component metal material may be any one of a wiring material, an electrode material, a contact material, and a sputtering target material.

An electronic component according to the present invention is an electronic component in which a wiring pattern, an electrode, or a contact is formed of a metal material.

The metal material contains Cu as a main component, contains 0.1 to 7.0 wt% of W, and 0.1 to 3.0 in total of one or a plurality of elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si. It is characterized by consisting of an alloy comprising wt%.

It is confirmed that the metal material applied to the said electronic component is low resistivity compared with the past, and is stable with heat, and excellent in workability.

An electronic component according to the present invention is an electronic component in which wiring patterns, electrodes, or contacts are formed of a metal material, and the metal material is an electronic component metal material mainly containing Cu, and an alloy containing 0.1 to 7.0 wt% of W. Characterized in that consists of.

In the electronic component according to the present invention, the wiring pattern, the electrode, or the contact may be formed through an etching process with a solution containing at least one of phosphoric acid and nitric acid.

In a metal alloy consisting of three or more in which the electronic component is applied to the material, for example, it can be etched by the etching solution of phosphoric acid such as _{H 3 PO 4 + HNO 3 +} CH 3 COOH. The etching rate can also be controlled by addition of phosphoric acid, nitric acid, acetic acid, water, cerium nitrate, silver nitrate, and the like to the etching solution. Therefore, in addition to the conventional method of patterning, it is possible to obtain a preferable method of patterning by applying to this kind of metal material.

In the electronic component according to the present invention, the wiring pattern, the electrode or the contact may be formed through an etching process in a gas atmosphere containing chlorine.

In a metal alloy consisting of three or more in which the electronic component is applied to the material, it can be dry-etched under a gas atmosphere including chlorine, and, for example, _{Cl 2, CCl 4, BCl 3} , SiCl 4 Etching treatment by RIE (Reactive Ion Etching), ICP or the like in a gas atmosphere containing chlorine or the like is possible. Therefore, in addition to the conventional method of patterning, it is possible to obtain a preferable method of patterning by applying to this kind of metal material.

In the electronic component according to the present invention, a portion other than the wiring pattern, the electrode and the contact portion contains a fluorine-containing gas such as CF ₄ , C ₃ F ₈ , C ₄ F ₈ , HF, SF ₆ , CHF. _{3, S0F 2, S0 2 F} 2, NH 4 F, may be formed by a BHF, and other process is worked by an etching process under a gas atmosphere such as a mixed gas of gas containing these elements.

In a metal material made of an alloy of three or more members to which the electronic component is applied, dry etching in a gas atmosphere containing fluorine is difficult, and these gases are advantageous in that they are not damaged by these gases. For example, _{CF 4, C 3 F 8,} C 4 F 8, HF, SF 6, CHF 3, S0F 2, S0 2 F 2, in the gas containing fluorine, such as NH ₄ F, BHF, or other gas Depending on the content of mixing with the element, for example, Si, polycrystalline Si, amorphous Si, SiO ₂ , Si ₃ N ₄ , Mo, W, etc., are not etched by RIE, ICP, etc. without the metal material composed of such an alloy of three or more members. Other materials, such as Ta, Ti, Pt, etc. can be etched. Therefore, it is possible to obtain a preferable patterning method by applying to a device made of a metal material different from this kind.

In the electronic component according to the present invention, it is also possible to form the wiring pattern, the electrode or the contact through a step of heat treatment at a temperature range of 100 ° C. or higher and 750 ° C. or lower.

In the electronic component according to the present invention, the wiring pattern, the electrode or the contact is made of any one of an oxide containing titanium, W, Ta, Mo, Ru, indium, titanium nitride, silicon oxide, silicon nitride, and tantalum nitride. It is also possible to be formed on the base.

In the electronic component according to the present invention, the wiring pattern, the electrode, or the contact may be directly formed on the glass substrate, the plastic resin substrate, or the resin substrate containing the polyimide. It is because the said wiring pattern, an electrode, or a contact is excellent in adhesiveness.

In the electronic component, 0.1 to 3.0 wt% of one or a plurality of elements of Al, Au, Ag, Ti, Ni, Co, and Si in a CuW alloy containing Cu as a main component and containing 0.1 to 7.0 wt% of W. In the alloy obtained by adding%, it is possible to maintain excellent thermal conductivity of pure Cu, and to adapt to conventional film forming processes such as sputtering, vapor deposition, CVD, plating, and the like, and easily by wet etching and dry etching. It can be patterned so that a stable state can be maintained even at high temperature. Therefore, the electronic component which applied the metal material for electronic components which is low resistivity, is stable with heat, and is excellent in workability to a wiring pattern, an electrode, or a contact can be obtained.

An electronic device according to the present invention is an electronic device having a wiring pattern, an electrode or a contact formed of a metal material, wherein the metal material contains Cu as a main component and contains 0.1 to 7.0 wt% of W, Al, Au, Ag , Ti, Ni, Co, and Si, characterized in that it comprises an alloy comprising 0.1 to 3.0 wt% of one or a plurality of elements selected from the group.

It is confirmed that the metal material applied to the said electronic device is low resistivity compared with the conventional, stable to heat, and excellent in workability.

The electronic device herein refers to a capacitor component having a specific capacity such as a laminated chip capacitor and an electrolytic capacitor, a semiconductor package component in which a semiconductor element is mounted (including a bonding process) on a copper foil or a resin substrate, and these electronic components. Define a device product that is a duplicate of

An electronic device according to the present invention is an electronic device having a wiring pattern, an electrode or a contact formed of a metal material, the metal material being an electronic component metal material containing Cu as a main component, and an alloy containing 0.1 to 7.0 wt% of W. Characterized in that consists of.

In the electronic device according to the present invention, the wiring pattern, the electrode, or the contact may be formed through an etching process with a solution containing at least one of phosphoric acid and nitric acid.

Further, in the electronic apparatus according to the present invention, the wiring patterns, electrodes and contacts, the gas atmosphere including chlorine, for example _{Cl 2, CCl 4, BCl 3} , SiCl 4 It is also possible to form through the etching process in the chlorine gas, such as these, and the mixed gas of these and other gas elements.

In addition, in the electronic device according to the present invention, other parts than the wiring pattern, the electrode and the contact point may be formed of a gas containing fluorine such as CF ₄ , C ₃ F ₈ , C ₄ F ₈ , HF, SF ₆ , _{CHF 3, S0F 2, S0 2} F 2, NH 4 F, may be formed by a BHF, and other process is worked by an etching process under a gas atmosphere such as a mixed gas of gas containing these elements.

In the electronic device according to the present invention, the wiring pattern, the electrode or the contact may be formed through a step of heat treatment at a temperature range of 100 ° C. or higher and 750 ° C. or lower.

In the electronic device according to the present invention, the wiring pattern, the electrode or the contact is made of any one of an oxide, titanium nitride, silicon oxide, silicon nitride, and tantalum nitride mainly composed of Ti, W, Ta, Mo, Ru, and indium. It is also possible to be formed on the base.

In the electronic device according to the present invention, the wiring pattern, the electrode or the contact may be directly formed on the glass substrate, the plastic resin substrate, or the resin substrate containing the polyimide.

In the method for processing a metal material according to the present invention, one or more selected from the group consisting of Cu, 0.1 to 7.0 wt% of W, and Al, Au, Ag, Ti, Ni, Co, and Si are included. A metal film made of an alloy containing 0.1 to 3.0 wt% of the elements in total is etched with a solution containing at least one of phosphoric acid and nitric acid to form a wiring pattern, an electrode or a contact.

A method for processing a metal material according to the present invention is a metal material for electronic components containing Cu as a main component, wherein a metal film made of an alloy containing 0.1 to 7.0 wt% of W is formed by a solution containing at least one of phosphoric acid and nitric acid. By etching, a wiring pattern, an electrode or a contact is formed.

The method for processing a metal material according to the present invention includes one or more elements selected from the group consisting of Cu, 0.1 to 7.0 wt% of W, and Al, Au, Ag, Ti, Ni, Co, and Si. A metal film made of an alloy containing 0.1 to 3.0 wt% of the total in total, a gas containing hydrochloric acid, for example Cl ₂ , CCl ₄ , BCl ₃ , SiCl ₄ Etching is performed in a mixed gas atmosphere of chlorine-based gases such as these and other gas elements to form wiring patterns, electrodes or contacts.

The method for processing a metal material according to the present invention is a metal material for electronic parts containing Cu as a main component, a metal film made of an alloy containing 0.1 to 7.0 wt% of W, a gas containing hydrochloric acid, such as Cl ₂ , CCl ₄ , BCl ₃ , SiCl ₄ And etching patterns in a mixed gas atmosphere of chlorine-based gases such as these and other gas elements to form wiring patterns, electrodes or contacts.

In the method for manufacturing an electronic component according to the present invention, one or more elements selected from the group consisting of Cu, 0.1 to 7.0 wt% of W, and Al, Au, Ag, Ti, Ni, Co, and Si are included. As a manufacturing method of an electronic component having a metal film made of an alloy containing 0.1 to 3.0 wt% in total,

Films other than the metal film may be formed of a gas containing fluorine, such as CF ₄ , C ₃ F ₈ , C ₄ F ₈ , HF, SF ₆ , CHF ₃ , S0F ₂ , S0 ₂ F ₂ , NH ₄ F, BHF And processing by etching in a gas atmosphere such as a mixed gas with other gas elements containing them.

A method for manufacturing an electronic component according to the present invention is a method for manufacturing an electronic component having a metal film made of an alloy containing Cu as a main component and containing 0.1 to 7.0 wt% of W.

Films other than the metal film may be formed of a gas containing fluorine, such as CF ₄ , C ₃ F ₈ , C ₄ F ₈ , HF, SF ₆ , CHF ₃ , S0F ₂ , S0 ₂ F ₂ , NH ₄ F, BHF And processing by etching in a gas atmosphere such as a mixed gas with other gas elements containing them.

The method for processing a metal material according to the present invention comprises one or more selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si containing 0.1 to 7.0 wt% of Cu as a main component. A metal film made of an alloy containing 0.1 to 3.0 wt% of the elements in total is heat-treated at a temperature range of 100 ° C or more and 750 ° C or less to form a wiring pattern, an electrode or a contact.

The method for processing a metal material according to the present invention is a metal material for electronic components containing Cu as a main component, wherein a metal film made of an alloy containing 0.1 to 7.0 wt% of W is used in a temperature range of 100 ° C. or higher and 750 ° C. or lower. The heat treatment is carried out to form wiring patterns, electrodes or contacts.

In the method for processing a metal material according to the present invention, Cu is used as a main component on a base made of any one of oxides, titanium nitride, silicon oxide, silicon nitride, and tantalum nitride, each of which includes Ti, W, Ta, Mo, Ru, and indium as a main component. And an alloy containing 0.1 to 7.0 wt% of W and 0.1 to 3.0 wt% of one or more elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si in total. A metal film is formed to form wiring patterns, electrodes or contacts.

According to the processing method of the metal material, by forming a metal film made of the alloy on the base to form a wiring pattern, an electrode or a contact, it is possible to secure a sufficient adhesiveness by applying a conventional processing process, it is a low resistivity, A wiring pattern that is stable to heat and excellent in workability can be obtained.

The method for processing a metal material according to the present invention includes Cu as a main component on a base made of any one of oxides, titanium nitride, silicon oxide, silicon nitride, and tantalum nitride containing Ti, W, Ta, Mo, Ru, and indium as the main components. A metal film made of an alloy containing 0.1 to 7.0 wt% of W is used as the metal material for electronic components, thereby forming a wiring pattern, an electrode, or a contact.

In the method for processing a metal material according to the present invention, one or more selected from the group consisting of Cu, 0.1 to 7.0 wt% of W, and Al, Au, Ag, Ti, Ni, Co, and Si are included. A metal film made of an alloy containing 0.1 to 3.0 wt% of the elements in total is directly formed on a glass substrate, a plastic resin substrate, or a resin substrate containing polyimide to form wiring patterns, electrodes or contacts. do.

According to the metal material processing method, a metal film made of the alloy is directly formed on a glass substrate, a plastic resin substrate, or a resin substrate containing polyimide to form a wiring pattern, an electrode, or a contact. Since the influence of oxygen of the alloy constituting the metal film is small, an increase in resistivity as in the case of Al, for example, can be reduced, thereby simplifying a low resistivity wiring pattern and the like by a simple manufacturing process. I can make it.

A method for processing a metal material according to the present invention is a metal material for electronic components containing Cu as a main component, and a metal film made of an alloy containing 0.1 to 7.0 wt% of W contains a glass substrate, a plastic resin substrate, or a polyimide. It forms directly on the resin substrate to form a wiring pattern, an electrode, or a contact, It is characterized by the above-mentioned.

The electronic optical component according to the present invention includes Cu as a main component, 0.1 to 7.0 wt% of W, and contains one or a plurality of elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si. A metal film made of an alloy containing 0.1 to 3.0 wt% in total is used as a reflecting film, an electrode or a wiring material.

According to the said electro-optical component, the electro-optical component which applied the reflecting film, the wiring pattern, or the electrode to the reflective film, the wiring pattern, or the electrode which consists of an alloy which is low resistivity, is stable with heat, is excellent in workability, and is excellent in reflectance can be obtained.

The electronic optical component according to the present invention is characterized by using a metal film made of an alloy containing 0.1 to 7.0 wt% of W as a reflective film, an electrode, or a wiring material as a metal material for electronic components containing Cu as a main component.

As described above, according to the present invention, conventionally by applying an alloy composed of Cu as a main component, containing 0.1 to 7.0 wt% of W, and containing 0.1 to 3.0 wt% of elements such as Al in total as a metal material, Compared with the above-described low resistivity, stable against heat and excellent in workability, an electronic part metal material, an electronic part, an electronic device, an electronic optical part, a method of manufacturing an electronic part, and a method of processing a metal material using the metal material can be obtained.

In addition, according to the present invention, by applying an alloy containing Cu as a main component and containing 0.1 to 7.0 wt% of W as a metal material, a metal material for an electronic component which is lower in resistivity, stable to heat and excellent in workability as compared with the prior art, An electronic part, an electronic device, an electronic optical part, a manufacturing method of the electronic part, and a processing method of the metal material using the metal material can be obtained.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described.

In the embodiment of the present invention, the metal material of various electronic components contains Cu as a main component, contains 0.1 to 7.0 wt% of W, and is selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si. An alloy comprising 0.1 to 3.0 wt% of one or more elements in total is applied.

In addition, various electronic components include display devices such as transmissive liquid crystal display elements, organic EL (EIectro Luminescence) panels, plasma displays, and electronic optical components by micro mirrors, various semiconductor devices, printed wiring boards, chip capacitors, These alloys are applied to a sputtering target material used for the production of a wiring material, an electrode material, a high reflection film material, a contact material, and the like, such as a relay and a wiring pattern.

According to this embodiment, the weather resistance of the whole Cu can be improved by adding W to Cu and mixing W uniformly at the grain boundary of Cu. However, when only W is added to Cu, the resistivity increases when W is added to the extent that sufficient weather resistance is obtained. On the other hand, when one or more elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si are further added, the resistivity can be lowered or the increase in resistivity can be suppressed. Here, the addition amount of this 3rd element improves weather resistance by adding 0.1-3.0 wt%, and when adding 3.0 wt% or more, weather resistance deteriorates on the contrary.

In this way, in the copper alloy having improved weather resistance, the characteristics of pure Cu having the highest conductivity and thermal conductivity among metal elements are maintained, and the metallic material having excellent weather resistance, low electrical resistivity, and high thermal conductivity can be obtained. .

In particular, in the case where the copper alloy is applied to the wiring material, by selecting an element to be added in the above-described range, a value of 7 μΩcm or less required as the wiring material can be ensured.

Moreover, as wiring material and electrode material, when it is equal to the resistivity of the AlSi alloy generally used conventionally, it is considered that the superiority is remarkably high, and if it is below the resistivity of Cr at least, it can be considered practically provided, and according to the experiment result, it is 1.6 A resistivity of not less than μΩcm and a resistivity of not more than 3.5 μΩcm, which is the resistivity of this AlSi alloy, can be ensured as necessary.

In addition, even when the amount of the added element is increased in order to secure weather resistance, if it is within the range of the added amount according to the present embodiment, the electrical resistance value of Cr is less than 12.6 μΩcm, so that the superiority as a wiring and electrode material can be obtained. It was confirmed.

In addition, all of these Cu alloys are not completely solid solutions, but form a grain boundary precipitation type metal alloy of Cu, which is a main element. In general, fully solid metal alloys are stable in terms of material properties. However, in the case of fully solid alloys, when the amount of added element is small, it often depends on the characteristics of the main element, and completely solves the main element problem. Difficult to do, especially in the case of Cu alloys has been confirmed.

In recent liquid crystal display devices and semiconductor devices, the patterns of wirings and electrodes are extremely fine. For this reason, material stability such as mechanical strength of the wiring and withstand voltage is extremely important. In such a situation, the grain boundary precipitation type metal alloy has been confirmed to significantly increase the strength of the main element, so that the workability is superior to that of Al, Mo, Cr, Ti, Ta, and Cu, which are conventional materials. It becomes stable under high temperature, and it becomes possible to improve reliability.

Incidentally, as the Cu processing method, in the dry etching, and a method of using a compound gas of chlorine is known, in the wet etching method using an etching solution of the solution, and the like of alkali such as hydrochloric acid-based or NH ₄ OH is known have. Also in the Cu alloy according to the present embodiment, etching can be performed by these methods, and various conventional processing methods accumulated with pure Al and Al alloys can be applied.

As the gas containing chlorine, for example, Cl ₂ , CCl ₄ , BCl ₃ , SiCl ₄ The Cu alloy film according to the present embodiment can be processed by RIE, plasma etching, or the like in these atmospheres. Incidentally, if such dry etching process using an etching gas containing chlorine is applied to the wiring pattern by Cu, chlorine in the gas and Cu react with each other as the etching proceeds, and CuCl ₂ is generated at the interface of the wiring pattern. the CuCl, but the damage to electrical conductivity and thermal conductivity by _2, in the Cu alloy film according to the present embodiment, it was confirmed that this lower reactivity does not occur.

As mentioned above, in the manufacturing process of the electronic component using this kind of metal material, the preferable patterning method can be obtained by the etching by the atmosphere of chlorine gas.

In addition, in an alloy of three or more members as in the present embodiment, dry etching in an atmosphere of fluorine gas alone is difficult, and the advantages of not being damaged by these gases are shown. For example, CF ₄ , C ₃ F ₈ , C ₄ F ₈ , HF, SF ₆ , CHF ₃ , S0F ₂ , S0 ₂ F ₂ , NH ₄ F, BHF and mixed gas with other gas elements containing them Plasma etching such as RIE, ICP, etc. in a gas atmosphere of Si, polycrystalline Si, amorphous Si, SiO ₂ , Si ₃ N ₄ , Mo, W, Other materials such as Ta, Ti, Pt can be etched, but for example CF ₄ , C ₃ F ₈ , C ₄ F ₈ , HF, SF ₆ , CHF ₃ , S0F ₂ , S0 ₂ F ₂ , NH ₄ F It has been confirmed that dry etching can be easily performed in a mixed gas with other gas elements containing BHF.

As described above, by treatment in a gas atmosphere of fluorine alone, it is possible to selectively treat portions other than these tertiary alloys, and this also applies to these kinds of metal materials to obtain a preferable method of patterning. have.

On the other hand, in wet etching in display manufacturing facilities including a liquid crystal display element, pure Al etc. are etched with the etching liquid containing phosphoric acid. Examples of such phosphoric acid etching solution include H ₃ PO ₄ + HNO ₃ + CH ₃ COOH, and in such an alloy composed of two or three elements containing pure Cu and Cu as a main component, Etching was difficult.

However, 0.1 to 3.0 wt.% Of the total of one or a plurality of elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co and Si, with Cu as the main component and 0.1 to 7.0 wt% of W added. In the alloy formed by adding%, it can be seen that etching can be performed using such a phosphate complex. Thereby, etching process can be performed effectively using the conventional etching apparatus by Al. Incidentally, as in the related art, by adding water, cerium nitrate, copper hydrochloride, and the like in addition to phosphoric acid, nitric acid, and acetic acid, it is also possible to control the etching rate and the dimensions of the wirings and electrodes formed by etching, that is, the pattern accuracy.

Moreover, also in the post process, such as cleaning after etching, processes, such as pure Al and Al alloy, can be used, and the possibility of polluting an environment can also be reduced compared with the case of etching an Al system. Also in these, it can be said that it is a metal material excellent in workability compared with Al, Mo, Cr, Ti, Ta, Cu which are conventional materials.

If the Cu alloy according to the present embodiment is used, the film can be easily and reliably formed by conventional film forming processes such as sputtering, vapor deposition, CVD, and plating. In this sputtering, this Cu alloy can be sputtered at a speed of about 2.3 to 2.5 times higher than that of an Al-based material, and the thin film formation speed by the sputtering method is fast. As a result, the film formation time can be shortened, and as a result, the time required for production can be shortened.

In the case of film formation by sputtering, vapor deposition, or the like, alloying is required by heating. In this treatment, heat treatment is performed at a temperature range of 100 ° C. or higher and 750 ° C. or lower, which is low in resistivity and stable to heat. And a metal film excellent in workability can be produced.

In addition, in terms of adhesion to the base material, which is important as a processing process, by applying any one of Ti, W, Ta, Mo, Ru, and indium-based oxides, titanium nitride, silicon oxide, silicon nitride, and tantalum nitride to the substrate, In this case, good adhesion can be ensured, and thus, in various semiconductor devices and the like, it can be easily replaced with a conventional Al-based wiring pattern, and good characteristics can be ensured.

In the case of Al-based, for example, when a film is directly formed on a plastic or glass by a thin film, the resistance value becomes considerably large in that Al reacts with oxygen, and the value is two to three times the resistance value in the bulk material. Becomes Moreover, in the case of pure Ag and Ag alloys, when directly film-forming on plastic and glass, since adhesiveness with a board | substrate material is bad, there exists a problem that it peels in the process immediately after film formation or a subsequent process.

On the other hand, in the case of the Cu alloy according to the present embodiment, the influence of oxygen is small, the increase in resistivity due to the formation of a thin film directly on the plastic and glass is reduced, and the adhesion is good. Problems such as peeling and chipping do not occur. Thereby, a film may be formed directly on the plastic or glass to form a wiring pattern, and the like, and thus the wiring pattern may be formed with good characteristics, and a wiring pattern having a low resistivity may be formed by a simple manufacturing process.

In this case, in the transmissive liquid crystal display panel, it is applied to the wiring pattern, and the wiring length can be increased simply and reliably even when the wiring length is increased by the large screen and the fixed color, and the wiring is miniaturized. In addition, the reliability can be improved and the power consumption can be reduced.

In addition, in the reflective liquid crystal display panel, the same effect as in the case of the transmissive liquid crystal display panel can be obtained by applying to the wiring pattern, and it is possible to secure a high reflectance stably by applying it to the high reflection film, thereby providing a bright display screen. Can be formed.

Similarly, by applying to a reflective film, an electrode, or a wiring pattern of an optical modulation device such as an electro-optical component by a micromirror, a device having high luminance and low resistance can be formed with a high luminance and a high-speed operation. have.

Moreover, in these liquid crystal display panels and various semiconductor devices, it can apply to the anodizing method using Ta, and can make a resistance value small enough as a two-layer structure by this copper alloy and Ta, for example.

In addition, also in various semiconductor devices, it is possible to prevent the increase in the wiring length and the increase in the resistance value due to the miniaturization of the wiring by applying the wiring pattern, thereby reducing the power consumption. In addition, voltage drop caused by wiring can be prevented, and signal delay can be prevented, thereby improving various characteristics and improving reliability.

In addition, it is possible to secure desirable characteristics by applying to wiring patterns of printed wiring boards, electrodes of chip components, contacts of relays and the like, and to ensure high reliability.

Moreover, in this embodiment, 0.1-3 wt% of one or more elements selected from the group which consists of Cu as a main component, contains W, and consists of Al, Au, Ag, Ti, Ni, Co, and Si is added in total. Although the case is demonstrated, this invention is not limited to this, It is also possible to apply it to the alloy which contains Cu as a main component and contains 0.1-7.0 wt% of W.

Claims (20)

An electronic component having a wiring pattern, an electrode, or a contact formed of a metal material, The metal material contains Cu as a main component, contains 0.1 to 7.0 wt% of W, and 0.1 to 3.0 in total of one or a plurality of elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si. An electronic component comprising an alloy containing wt%. An electronic component having a wiring pattern, an electrode, or a contact formed of a metal material, The said metal material is a metal material for electronic components which has Cu as a main component, and consists of an alloy containing 0.1-7.0 wt% of W. The electronic component characterized by the above-mentioned. The electronic component according to claim 1 or 2, wherein the wiring pattern, the electrode or the contact is formed through an etching process with a solution containing at least one of phosphoric acid and nitric acid. The electronic component according to claim 1 or 2, wherein the wiring pattern, the electrode, or the contact is formed through an etching process in a gas atmosphere containing chlorine. The electronic component according to claim 1 or 2, wherein portions other than the wiring pattern, the electrode, and the contact portion are formed through a step of processing by etching in a gas atmosphere containing fluorine. The electronic component according to claim 1 or 2, wherein the wiring pattern, the electrode or the contact is formed through a process of heat treatment at a temperature range of 100 ° C or higher and 750 ° C or lower. The wiring pattern, the electrode or the contact is made of any one of an oxide, titanium nitride, silicon oxide, silicon nitride, and tantalum nitride based on Ti, W, Ta, Mo, Ru, and indium. An electronic component, characterized in that formed on a base made of. The electronic component according to claim 1 or 2, wherein the wiring pattern, the electrode or the contact is formed directly on a glass substrate, a plastic resin substrate, or a resin substrate containing polyimide. An electronic device in which a wiring pattern, an electrode or a contact is formed by a metal material, The metal material contains Cu as a main component, contains 0.1 to 7.0 wt% of W, and 0.1 to 3.0 in total of one or a plurality of elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si. An electronic apparatus comprising an alloy containing wt%. An electronic device in which a wiring pattern, an electrode or a contact is formed by a metal material, An electronic device characterized by the above-mentioned metal material being a metal material for electronic components containing Cu as a main component, and consisting of an alloy containing 0.1 to 7.0 wt% of W. The electronic device according to claim 9 or 10, wherein the wiring pattern, the electrode or the contact point is formed through an etching process with a solution containing at least one of phosphoric acid and nitric acid. The electronic device according to claim 9 or 10, wherein the wiring pattern, the electrode, or the contact is formed through an etching process in a gas atmosphere containing chlorine. The electronic device according to claim 9 or 10, wherein portions other than the wiring pattern, the electrode, and the contact portion are formed through a process of processing by etching in a gas atmosphere containing fluorine. The electronic device according to claim 9 or 10, wherein the wiring pattern, the electrode, or the contact are formed through a heat treatment process in a temperature range of 100 ° C or more and 750 ° C or less. The said wiring pattern, an electrode, or a contact body is any one of oxide, titanium nitride, silicon oxide, silicon nitride, and tantalum nitride which are main components of Ti, W, Ta, Mo, Ru, and indium. An electronic device, characterized in that formed on the base. The electronic device according to claim 9 or 10, wherein the wiring pattern, the electrode or the contact is formed directly on a glass substrate, a plastic resin substrate, or a resin substrate containing polyimide. Cu is contained as a main component, 0.1 to 7.0 wt% of W, and 0.1 to 3.0 wt% of one or more elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si in total As a manufacturing method of an electronic component having a metal film made of an alloy, A film other than the metal film is processed by etching in a gas atmosphere containing fluorine. As a metal material for electronic components containing Cu as a main component, a method for producing an electronic component having a metal film made of an alloy containing 0.1 to 7.0 wt% of W, A film other than the metal film is processed by etching in a gas atmosphere containing fluorine. Cu is contained as a main component, 0.1 to 7.0 wt% of W, and 0.1 to 3.0 wt% of one or more elements selected from the group consisting of Al, Au, Ag, Ti, Ni, Co, and Si in total An electronic optical component comprising a metal film made of an alloy formed as a reflective film, an electrode, or a wiring material. An electronic optical component comprising a metal film made of an alloy containing 0.1 to 7.0 wt% of W as a reflecting film, an electrode, or a wiring material as a metal material for an electronic component mainly containing Cu.