KR20180079923A - Etching solution composition and manufacturing method of an array substrate for display device using the same - Google Patents

Etching solution composition and manufacturing method of an array substrate for display device using the same Download PDF

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KR20180079923A
KR20180079923A KR1020170000676A KR20170000676A KR20180079923A KR 20180079923 A KR20180079923 A KR 20180079923A KR 1020170000676 A KR1020170000676 A KR 1020170000676A KR 20170000676 A KR20170000676 A KR 20170000676A KR 20180079923 A KR20180079923 A KR 20180079923A
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South Korea
Prior art keywords
etchant composition
weight
film
wiring
present invention
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KR1020170000676A
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Korean (ko)
Inventor
이승수
권민정
심경보
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동우 화인켐 주식회사
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Priority to KR1020170000676A priority Critical patent/KR20180079923A/en
Publication of KR20180079923A publication Critical patent/KR20180079923A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/20Acidic compositions for etching aluminium or alloys thereof
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Abstract

The present invention relates to an etchant composition comprising nitric acid, phosphoric acid, acetic acid, a chlorine compound, a sulfonic acid compound, a sulfur compound, and water and a wiring fabricated therefrom, a method of manufacturing an array substrate for a display device using the same, .

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an etching solution composition and an array substrate for a display device using the same,

The present invention relates to an etching liquid composition and a wiring fabricated therefrom, a method of manufacturing an array substrate for a display device using the same, and an array substrate for a display device.

2. Description of the Related Art In general, a flat panel display is divided into a passive matrix type and an active matrix type according to a driving method, and the active driving type has circuits using a thin film transistor (TFT). Such circuits are typically used in flat panel display devices such as a liquid crystal display (LCD) and an organic electroluminescence display (OELD). The active matrix type flat panel display device is not only excellent in resolution and moving image implementation capability, but also advantageous in miniaturization of a display device.

In the active matrix type flat panel display device, a gate electrode, a thin film transistor including source / drain electrodes, a plurality of wirings, and a pixel electrode are formed by patterning each conductive film made of different conductive materials. For example, the gate electrode is a low-resistance conductive material made of Al, Mo, Cu, or an alloy thereof. The source / drain electrode is made of Mo, Cr, Al, or an alloy thereof, and the pixel electrode includes a transparent electrode made of ITO or IZO. Also, the conductive film may be formed of a single film, but may be formed of multiple films made of different materials in order to obtain better characteristics.

At this time, the conductive films made of different materials have difficulties in performing the etching process with the etching solution having the same composition and different characteristics such as etching rate difference. Also, since etching solutions having different compositions should be used, equipment for the etching process must be used differently. As a result, the etching processes for forming the thin film transistor and the plurality of wirings may be complicated, and the manufacturing cost and time may be increased and the productivity of the product may be deteriorated.

In order to solve this problem, an etchant capable of simultaneously etching conductive films made of different materials has been actively developed.

For example, an etchant composition capable of simultaneously etching aluminum and ITO has been proposed. Thus, the gate electrode and the pixel electrode were etched using the same etchant, thereby improving the productivity.

However, the conventional etching solution composition still has a problem that the etching straightness and the uniformity are not excellent.

An object of the present invention is to provide an etchant composition excellent in etching straightness and uniformity.

Another object of the present invention is to provide an etchant composition capable of inhibiting the occurrence of tip upon etching a transparent conductive film.

It is also an object of the present invention to provide an etched wiring with the etchant composition.

It is still another object of the present invention to provide a method of manufacturing an array substrate for a display device using the etchant composition.

In order to achieve the above object,

The present invention relates to a process for producing an etchant composition,

40 to 60 wt% phosphoric acid;

5 to 9% by weight of nitric acid;

15 to 25% by weight acetic acid;

0.1 to 2% by weight of a chlorinated compound;

0.5 to 3% by weight of a sulfonic acid-based compound;

0.5 to 3 wt% of a sulfur-based compound; And

Wherein the etchant composition comprises a residual amount of water such that the total weight of the etchant composition is 100% by weight.

The present invention also provides a wiring etched with the etchant composition of the present invention.

The present invention also provides a method of manufacturing a semiconductor device, comprising: (a) forming a gate wiring on a substrate;

(b) forming a gate insulating layer on the substrate including the gate wiring;

(c) forming a semiconductor layer on the gate insulating layer;

(d) forming source and drain electrodes on the semiconductor layer; And

(e) forming a pixel electrode or a reflective film connected to the drain electrode; The method comprising the steps of:

At least one of the steps (a), (d), and (e) may be performed by etching the etchant composition of the present invention to form respective gate wirings, source and drain electrodes, pixel electrodes, The present invention also provides a method of manufacturing an array substrate for a display device.

The present invention also provides an array substrate for a display device manufactured by the manufacturing method of the present invention.

The etching composition of the present invention has an excellent etching straightness and etching uniformity.

Further, the etching solution composition of the present invention has an effect of not generating a tip when etching the transparent conductive film.

1 is an SEM photograph showing that side etch is excellent.
2 is a SEM photograph showing that the side etch is poor.
3 is an SEM photograph showing that the taper angle is excellent.
4 is a SEM photograph showing that the taper angle is poor.
5 is an SEM photograph showing that ITO tip is not generated.
6 is a SEM photograph showing that an ITO tip is generated.
7 is an SEM photograph showing that the lower film damage does not occur.
8 is an SEM photograph showing that the lower film damage has occurred.

Hereinafter, the present invention will be described in more detail.

The present invention relates to a process for producing an etchant composition,

40 to 60 wt% phosphoric acid;

5 to 9% by weight of nitric acid;

15 to 25% by weight acetic acid;

0.1 to 2% by weight of a chlorinated compound;

0.5 to 3% by weight of a sulfonic acid-based compound;

0.5 to 3 wt% of a sulfur-based compound; And

To an etchant composition comprising a residual amount of water such that the total weight of the etchant composition is 100% by weight.

The etchant composition of the present invention has an advantage of excellent etching straightness and etching uniformity of a slope. In addition, when etching a multilayer film including a transparent conductive film, it has an effect of suppressing tip generation of the transparent conductive film.

The etchant composition of the present invention can etch a single layer made of aluminum or an aluminum alloy, or a multi-layered film composed of the single layer and the transparent conductive layer, but is not limited thereto.

The aluminum alloy is not particularly limited, but specific examples thereof include aluminum (Ni), copper (Cu), zinc (Zn), manganese (Mn), chromium (Cr), tin (Sn) ), Neodymium (Nd), niobium (Nb), molybdenum (Mo), magnesium (Mg), tungsten (W), protactinium (Pa), lanthanum (La) and titanium Or more, and more preferably an aluminum alloy film containing nickel (Ni) or lanthanum (La).

Specific examples of the transparent conductive film include, but are not limited to, indium tin oxide (ITO), zinc oxide indium (IZO), zinc tin oxide indium (ITZO), gallium gallium indium zinc oxide (IGZO)

(Al) / transparent conductive film or transparent conductive film / aluminum alloy / transparent conductive film / aluminum conductive film / aluminum conductive film / aluminum conductive film / aluminum conductive film / aluminum conductive film / transparent conductive film / A triple film such as a film, but the present invention is not limited thereto.

Hereinafter, components constituting the etchant composition of the present invention will be described.

(A) Phosphoric acid ( H 3 PO 4 )

The phosphoric acid contained in the etchant composition of the present invention is a peroxidizing agent, and preferably performs a wet etching by oxidizing aluminum and the transparent conductive film when the multilayered film of aluminum / transparent conductive film is etched.

The phosphoric acid is contained in an amount of 40 to 60% by weight, preferably 45 to 55% by weight, based on the total weight of the etching solution composition of the present invention. If the content of phosphoric acid is less than 40% by weight, the etching rate of the aluminum film may be lowered, and residues may be generated in the aluminum film to cause defects. On the other hand, when the aluminum / transparent conductive film is contained in an amount of more than 60% by weight, the etching rate of the transparent conductive film is lowered and the etching rate of the aluminum film is excessively accelerated to generate tips in the upper and lower transparent conductive films, There is a problem in the subsequent process.

(B) nitric acid ( HNO 3 )

The silver nitrate is a co-oxidant included in the etchant composition of the present invention. Preferably, the aluminum nitrate is oxidized by wet oxidation of aluminum and the transparent conductive film when the multilayer film of aluminum / transparent conductive film is etched.

The nitric acid is included in an amount of 5 to 9% by weight, preferably 6 to 8% by weight based on the total weight of the etching solution composition of the present invention. When the content of nitric acid is less than 5% by weight, the etch rate of the aluminum film and the transparent conductive film is lowered during the multi-layer etching of the aluminum / transparent conductive film, thereby causing unevenness in the etch uniformity and unevenness. On the other hand, if it exceeds 9 wt%, the etching speed of the transparent conductive film on the upper and lower sides is increased, and an overeating angle is generated, which may cause problems in the subsequent process.

(C) Acetic acid (CH 3 COOH)

The acetic acid contained in the etchant composition of the present invention is a co-oxidant, which functions to oxidize aluminum to wet-etch.

The acetic acid is contained in an amount of 15 to 25% by weight, and preferably 18 to 23% by weight based on the total weight of the etchant composition of the present invention. If the content of acetic acid is less than 15% by weight, the etching rate becomes uneven and the substrate becomes stained. If the acetic acid content is more than 25% by weight, bubbles may be generated in the etching solution composition. It may cause problems in the subsequent process.

(D) Chlorine-based compound

The chlorine-based compound contained in the etchant composition of the present invention controls the etching rate of the transparent conductive film on the upper part when etching the aluminum / transparent conductive film in the multilayer film, maintains the etching rate of the transparent conductive film and the aluminum film uniform, It plays a role.

The kind of the chlorine-based compound is not particularly limited, but it preferably includes at least one selected from the group consisting of sodium chloride, potassium chloride and ammonium chloride.

The chlorine compound is contained in an amount of 0.1 to 2% by weight, preferably 0.3 to 1.0% by weight based on the total weight of the etching solution composition of the present invention. If the content of the chlorine compound is less than 0.5% by weight, a tip is formed in the upper transparent conductive film when the aluminum / transparent conductive film is etched in the multilayer film. If the chlorine compound content is more than 2% by weight, Lt; / RTI >

(E) sulfonic acid compound

The sulfonic compound included in the etching solution composition of the present invention improves the straightness of the slope of the thin film when wet etching and controls the etching rate so as to uniformly etch the thin film.

Although the type of the sulfonic acid compound is not particularly limited, it preferably contains at least one member selected from the group consisting of methanesulfonic acid, benzenesulfonic acid and aminosulfonic acid, and most preferably includes methanesulfonic acid.

The sulfonic acid compound is contained in an amount of 0.5 to 3% by weight, preferably 0.5 to 1% by weight based on the total weight of the etching solution composition of the present invention. When the content of the sulfonic acid compound is less than 0.5% by weight, etching uniformity of the substrate is lowered during the multilayer etching of the aluminum / transparent conductive film, and the residue may partially occur in the transparent conductive film. The etch rate is lowered and the desired etching rate can not be realized, which may cause a problem in the process.

(F) Sulfur-based  compound

The sulfur compound contained in the etching solution composition of the present invention improves the straightness of the slope with respect to the thin film during the wet etching and improves the etching uniformity.

The kind of the sulfur-based compound is not particularly limited, but it preferably contains at least one member selected from the group consisting of magnesium sulfate, ammonium sulfate, sodium sulfate and potassium sulfate, and most preferably contains magnesium sulfate .

The sulfur compound is contained in an amount of 0.5 to 3% by weight, preferably 0.5 to 1.5% by weight based on the total weight of the etchant composition of the present invention. If the content of the sulfur compound is less than 0.5% by weight, irregularities may be generated on the etched slope and residues may be formed. If the content is more than 3% by weight, precipitates may be generated and a process problem may occur.

(G) Water

The water contained in the etchant composition of the present invention is not particularly limited, but it is preferable to use deionized water. It is preferable that the deionized water has a resistivity value of 18 M? / Cm or more for semiconductor processing.

The etchant composition of the present invention may further include at least one selected from the above-mentioned components, etchants, surfactants, metal ion sequestering agents, pH adjusting agents, and other additives not limited thereto. The above additives can be selected from additives commonly used in the art in order to further improve the effects of the present invention within the scope of the present invention.

The components constituting the etchant composition of the present invention preferably have purity for semiconductor processing.

The present invention also relates to a wiring etched with the etchant composition of the present invention.

More specifically, the wiring may be a trace wiring or a flexible nanowire wiring for reading a signal mainly sensed in X, Y coordinates in a touch screen panel (TSP).

The wiring may be a single film made of aluminum or an aluminum alloy, or a multilayer film composed of the single film and the transparent conductive film. The contents of the single layer of the aluminum alloy, the single layer and the multilayer film composed of the transparent conductive layer can be similarly applied to the aluminum-containing thin layer.

In addition,

(a) forming a gate wiring on a substrate;

(b) forming a gate insulating layer on the substrate including the gate wiring;

(c) forming a semiconductor layer on the gate insulating layer;

(d) forming source and drain electrodes on the semiconductor layer; And

(e) forming a pixel electrode or a reflective film connected to the drain electrode; The method comprising the steps of:

At least one of the steps (a), (d), and (e) may be performed by etching the etchant composition of the present invention to form respective gate wirings, source and drain electrodes, pixel electrodes, The present invention also relates to a method of manufacturing an array substrate for a display device.

Preferably, the gate wiring, the source and drain electrodes, the pixel electrode or the reflective film may be a single film made of aluminum or an aluminum alloy, or a multilayer film made of the single film and the transparent conductive film, The gate wiring, the source and drain electrodes, the pixel electrode, or the reflective film can be manufactured.

The contents of the single layer of the aluminum alloy, the single layer and the multilayer film composed of the transparent conductive layer can be similarly applied to the aluminum-containing thin layer.

The array substrate for a display device may be a thin film transistor substrate.

The present invention also relates to an array substrate for a display device manufactured by the manufacturing method of the present invention.

The display device may be variously applied to an organic light emitting diode (OLED), a liquid crystal display (LCD), or a touch screen panel (TSP).

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the following examples illustrate the present invention and the present invention is not limited by the following examples, and various modifications and changes may be made. The scope of the present invention will be determined by the technical idea of the following claims.

Example  1 to 11 and Comparative Example  1 to 15. Etchant  Composition manufacturing

The etchant compositions of Examples 1 to 11 and Comparative Examples 1 to 15 were prepared by the compositions and contents shown in Table 1 below, and the remaining amount of deionized water was included so that the total weight of the composition was 100% by weight.

(Unit: wt%) division Phosphoric acid nitric acid Acetic acid Sodium chloride Sulfonic acid compound Sulfur-based compound Ammonium nitrate Methanesulfonic acid Benzenesulfonic acid Magnesium sulfate Ammonium sulfate Example One 50 6 18 0.3 1.5 - 0.8 - - 2 45 5 15 0.1 0.5 - 1.2 - - 3 50 7 20 0.6 One - One - - 4 50 6 25 One One - One - - 5 55 8 15 0.5 One - 1.5 - - 6 60 6 20 1.5 0.5 - 2 - - 7 50 9 25 1.8 2.5 - One - - 8 55 7 20 0.8 - One One - - 9 53 6 25 0.8 - 2 0.5 - - 10 52 7 20 0.6 One - - One 11 50 6 25 0.7 2 - - 2 Comparative Example One 65 6 20 1.5 2 - 2 - - 2 38 5 25 1.5 One - 1.5 - - 3 50 4.5 25 1.5 One - 1.5 - - 4 50 10 25 2.5 One - One - - 5 50 7 28 One One - One - - 6 50 7 10 One 2 - One - - 7 50 6 20 0.05 2 - 2 - - 8 50 6 20 2.5 2 - 2 - - 9 55 7 25 One 3.5 - 2 - - 10 55 7 25 One - - 2 - - 11 55 7 25 One 2 - 3.5 - - 12 55 7 25 One 2 - - - - 13 55 7 25 One - - - - - 14 60 6 12 0.1 - - 2 - 0.05 15 60 7.5 10 - - - - 10 -

Experimental Example  One. Etchant  Evaluation of composition performance

An Al film was deposited to a thickness of 1000 Å on a 100 mm × 100 mm glass (SiO 2 ) substrate and a 150 Å ITO film was deposited thereon as a test piece to form a photoresist film on the IZO. Etching was performed at 33 using the etchant compositions of the above Examples and Comparative Examples.

The etcher composition was sprayed at 0.1 MPa and the exhaust pressure in the etcher zone was maintained at 20 Pa. After completion of the etching, side etch (S / E), taper angle (T / A), upper ITO tip generation and damage level of the underlying aluminum film were checked using SEM equipment. Respectively.

<Side Etch Evaluation Criteria>

Less than 0.3μm: unetch

1 占 퐉 or more: poor, (Fig. 2)

0.3 to less than 0.5 占 퐉: good,

0.5 to less than 1 占 퐉: Excellent (Fig. 1)

<Evaluation Criteria of Taper Angle>

Less than 20 DEG, more than 70 DEG: poor (FIG. 4)

20 ° or more and less than 40 °: Good,

40 ° to less than 70 °: Excellent (Figure 3)

<Upper ITO tip generation evaluation>

Tip Not occurring: Excellent (Figure 5)

Tip Origin: Bad (Figure 6)

&Lt; Evaluation of damage of lower aluminum film &

No damage to the lower film: Excellent (Figure 7)

Lower film damage occurred: Bad (Figure 8)

division Evaluation items Side etched Taper angle ITO type Underlying membrane damage Example One Good Good Great Great 2 Good Good Great Great 3 Great Great Great Great 4 Good Good Great Great 5 Good Good Great Great 6 Good Great Great Great 7 Great Good Great Great 8 Good Good Great Great 9 Good Good Great Great 10 Good Good Great Great 11 Good Good Great Great Comparative Example One Bad Good Great Great 2 Bad Bad Bad Great 3 Bad Good Bad Great 4 Bad Good Great Bad 5 Good Bad Great Bad 6 Good Good Bad Great 7 Good Bad Bad Great 8 Bad Good Great Bad 9 Good Bad Great Bad 10 Good Good Bad Great 11 Good Good Bad Bad 12 Good Good Bad Great 13 Bad Good Bad Great 14 Good Good Bad Great 15 Good Good Great Bad

In the results of Table 2, Examples 1 to 11, which are the etching solution compositions of the present invention, showed excellent or good results of side etch, taper angle, ITO tip and lower film damage evaluation, and at least one item Showed excellent results.

On the other hand, Comparative Example 1, in which the content of phosphoric acid exceeded the range of the present invention, showed poor results on the side surface, and Comparative Example 2 in which the content of phosphoric acid was less than the range of the present invention showed both side etch, taper angle and ITO tip And showed poor results.

In Comparative Example 3 in which the content of nitric acid was less than the range of the present invention, side etch and ITO tip were poor. In Comparative Example 4 in which the content of nitric acid exceeded the range of the present invention, Results.

In Comparative Example 5 in which the content of acetic acid exceeded the range of the present invention, taper angles were poor. In Comparative Example 6, in which the content of acetic acid was less than the range of the present invention, ITO tip occurred.

In Comparative Example 7 in which the content of the chlorine compound was less than the range of the present invention, both of the taper angle and the ITO tip were poor. In Comparative Example 8 in which the content of the chlorine compound exceeded the range of the present invention, Showed damage.

In Comparative Example 9 in which the content of the sulfonic acid compound exceeded the range of the present invention, the taper angle was poor. In Comparative Example 10, which did not include the sulfonic acid compound, an ITO tip occurred.

In Comparative Example 11 in which the content of the sulfur flame-based compound exceeded the range of the present invention and Comparative Example 12 in which the content of the sulfur flame-based compound was not contained, ITO tip occurred.

Comparative Example 13, which did not contain a sulfonic acid compound and a sulfur compound, was inferior in side-value, and an ITO tip occurred.

In Comparative Example 14 which did not contain a sulfonic acid compound but which contained ammonium nitrate, ITO tip occurred, and in Comparative Example 15 which did not include a chlorinated compound and a sulfonic acid compound, a lower film damage occurred.

Therefore, the etchant composition of the present invention does not cause damage to the ITO tip and the underlying film during etching, and has excellent effects on the side edge and taper angle.

Claims (13)

  1. Based on the total weight of the etchant composition,
    40 to 60 wt% phosphoric acid;
    5 to 9% by weight of nitric acid;
    15 to 25% by weight acetic acid;
    0.1 to 2% by weight of a chlorinated compound;
    0.5 to 3% by weight of a sulfonic acid-based compound;
    0.5 to 3 wt% of a sulfur-based compound; And
    Wherein the etchant composition comprises a residual amount of water such that the total weight of the etchant composition is 100% by weight.
  2. The etchant composition according to claim 1, wherein the chlorine-based compound comprises at least one selected from the group consisting of sodium chloride, potassium chloride, and ammonium chloride.
  3. The etchant composition according to claim 1, wherein the sulfonic acid compound comprises at least one member selected from the group consisting of methanesulfonic acid, benzenesulfonic acid and aminosulfonic acid.
  4. The etchant composition of claim 1, wherein the sulfur compound comprises at least one selected from the group consisting of magnesium sulfate, ammonium sulfate, sodium sulfate, and potassium sulfate.
  5. 5. The etchant composition of claim 4, wherein the sulfur-based compound comprises magnesium sulfate.
  6. The etchant composition of claim 1, wherein the etchant composition comprises a single layer of aluminum or an aluminum alloy, or a multi-layered film comprising the single layer and the transparent conductive layer.
  7. [7] The transparent conductive film according to claim 6, wherein the transparent conductive film comprises at least one selected from indium tin oxide (ITO), zinc oxide indium (IZO), zinc tin oxide indium (ITZO), and gallium indium gallium indium (IGZO) Lt; / RTI &gt;
  8. 7. An interconnect etched with the etchant composition of any one of claims 1-7.
  9. The wiring according to claim 8, wherein the wiring is a single film made of aluminum or an aluminum alloy, or a multilayer film made of the single film and the transparent conductive film.
  10. The wiring according to claim 8, wherein the wiring is a trace wiring for a touch screen panel or a flexible nanowire.
  11. (a) forming a gate wiring on a substrate;
    (b) forming a gate insulating layer on the substrate including the gate wiring;
    (c) forming a semiconductor layer on the gate insulating layer;
    (d) forming source and drain electrodes on the semiconductor layer; And
    (e) forming a pixel electrode or a reflective film connected to the drain electrode; The method comprising the steps of:
    At least one of the step (a), the step (d), and the step (e) is etched with the etching liquid composition according to any one of claims 1 to 7 to form the gate wiring, the source and drain electrodes, the pixel electrode, And a step of forming a plurality of pixel electrodes on the substrate.
  12. 12. The method of manufacturing an array substrate for a display device according to claim 11, wherein the array substrate for a display device is a thin film transistor substrate.
  13. An array substrate for a display device manufactured by the manufacturing method according to any one of claims 11 and 12.
KR1020170000676A 2017-01-03 2017-01-03 Etching solution composition and manufacturing method of an array substrate for display device using the same KR20180079923A (en)

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Publication number Priority date Publication date Assignee Title
KR100420100B1 (en) * 2001-07-12 2004-03-04 삼성전자주식회사 Aluminium etchant composition
KR20070017762A (en) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 Etchant composition, method of patterning electroconductive film using the same and method of fabricating flat panel display using the same
CN102206821B (en) * 2010-03-31 2013-08-28 比亚迪股份有限公司 Composition for etching and regulating aluminum alloy and method for etching aluminum alloy
CN105970225B (en) * 2016-07-01 2018-07-13 苏州博洋化学股份有限公司 A kind of aluminium etchant and preparation method thereof

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