KR100786635B1 - Physical vapor deposition equipment having neutral beam producing apparatus - Google Patents

Abstract

The present invention is an ion source for extracting an ion beam having a polarity from the gas injected through the injection hole, a grid assembly formed at one end of the ion source, a plurality of grid holes to accelerate the ion beam of a specific polarity, and the A plurality of reflector holes corresponding to the grid holes of the grid assembly, the neutral beam generator comprising a reflector for reflecting the ion beam passing through the grid hole in the reflector hole and converting it into a neutral beam; A reaction chamber which is positioned at an end of the reaction chamber and includes a stage capable of injecting gas through an injection hole, the stage being capable of positioning the substrate on the traveling path of the neutral beam generated by the reflector; and depositing on the substrate The flux of the reactant to be formed comprises a plurality of target portions produced by sputtering, The reflector hole of the previous reflector is formed such that the emission area A2 of the neutral beam flux emitted from the reflector is larger than the flux incidence area A1 at the incident surface where the accelerated flux is incident on the grid assembly. Provided is a physical vapor deposition apparatus having a neutral beam generator.

In addition, the present invention, an ion source for extracting the ion beam having a polarity from the gas injected through the injection hole, a grid assembly formed at one end of the ion source, a plurality of grid holes for accelerating the ion beam of a specific polarity and And a plurality of reflector holes corresponding to the grid holes of the grid assembly, the neutral beam generating device including a reflector for reflecting the ion beams passing through the grid holes in the reflector holes and converting them into neutral beams; A reaction chamber including a stage positioned at an end of the reflector, into which gas may be injected through an injection hole, and for placing a substrate to be processed on a traveling path of a neutral beam generated by the reflector; And a plurality of source portions for evaporating the reactant to be deposited on the substrate in a thermal or e-beam manner. The reflector hole of the reflector is formed such that the emission area A2 of the neutral beam flux emitted from the reflector is larger than the flux incidence area A1 at the incident surface where the accelerated flux is incident on the grid assembly. Provided is a physical vapor deposition apparatus having a neutral beam generator.

Neutral Beam, Grid, Reflector, Ion Beam, Incidence Angle, Deposition

Description

Physical vapor deposition equipment having neutral beam producing apparatus

1 is a schematic view showing a deposition apparatus with a neutral beam generator;

2 is a perspective view schematically showing an ion source of the deposition apparatus shown in FIG. 1;

3 is a perspective view schematically showing a neutral beam generator (reflector) of the deposition apparatus shown in FIG. 1;

4 is a schematic view for explaining a reflector of another embodiment according to the present invention;

FIG. 5 is a view schematically illustrating an effect expected by installing a reflector according to FIG. 4 in a deposition apparatus having a neutral beam generator; FIG.

6 is a schematic side cross-sectional view illustrating a physical vapor deposition apparatus, that is, a sputtering apparatus, according to an embodiment with a neutral beam generator;

7 is a schematic plan view illustrating a sputtering device according to another embodiment with a neutral beam device;

FIG. 8 is a diagram illustrating a physical vapor deposition apparatus, that is, a vacuum evaporation apparatus, according to an embodiment having a neutral beam deposition apparatus.

※ Explanation of codes for main parts of drawing

10; Ion source 12; Induction coil

14; Grid 14a; Grid hole

20; Substrate 40 to be treated; reflector

42; Reflector hole 50; Reaction chamber

60; stage.

The present invention is a neutral beam generating device that is used for flux of radicals generated by plasma forming a reaction gas, that is, a neutral beam generating device which neutralizes an ion beam to irradiate a substrate to be processed during physical vapor deposition, sputtering and vacuum evaporation. It relates to a physical vapor deposition apparatus having a.

As the demand for high integration of semiconductor devices continues, design rules have been further reduced in the design of semiconductor integrated circuits in recent years, requiring a critical dimension of 90 nm or less. Currently, equipment for implementing such nanometer-class semiconductor devices is mainly used for ion reinforcing devices such as high density plasma devices and reactive ion devices. However, in such equipment, a large amount of ions exist to perform a deposition (or etching) process, and these ions collide with a semiconductor substrate or a specific material layer on the semiconductor substrate with energy of several hundred eV, so that the semiconductor substrate or such a specific material Causes physical and electrical damage to the layer.

For example, as physical damage, the surface of a crystalline substrate or a particular material layer that collides with these ions may be converted to an amorphous layer, and only some components of the material layer where some of the incident ions are adsorbed or collided selectively. The chemical composition of the surface layer that is desorbed and deposited (or etched) may be changed, and the atomic bonds of the surface layer may be broken by collision and become dangling bonds. Such dangling bonds may cause not only physical damage to the material but also electrical damage. In addition, notching of polysilicon due to chargeup damage of the gate insulating layer or charging of the photoresist may be performed. Cause electrical damage. In addition to such physical and electrical damage, surface contamination may also occur due to the contamination of the chamber material or the reaction gas when the CF-based reaction gas is used.

Therefore, in the nanometer-scale semiconductor device, such physical and electrical damage caused by ions may lower the reliability of the device and further reduce productivity. There is a need for development of a new concept of semiconductor deposition (or etching) apparatus and method that can be applied.

Among them, DBOakes et al. Proposed an intact etching technique using an overheated atomic beam in the paper "Selective, Anisotropic and Damage-Free SiO ₂ Etching with a Hyperthermal Atomic Beam." Takashi Yunogami et al. Used neutral beams and neutral radicals in the paper "Development of neutral-beam-assisted etcher" (J. Vac. Sci. Technol. A 13 (3), May / June, 1995). The silicon oxide etching technology with very low damage is proposed, and M. J. Goeckner et al. Induced Damage.May 13-14, Monterey, CA.) describes etching techniques for superheated neutral beams without charge instead of plasma.

On the other hand, the applicant of the present invention is based on the technical content of the document as described above, the 'etching device using a neutral beam' registered in the Republic of Korea Patent Registration No. 0412953 and the semiconductor device using the 'neutral beam registered in Patent Registration No. 0380660 Etching method and an etching apparatus for the same has been disclosed, the application describes a technique of a reflector for converting an ion beam into a neutral beam, and a technique for an etching method using a device having a reflector, the present invention with reference to It is integrated in

By the way, these patents which use reflectors for converting ion beams into neutral beams can be used for physical vapor deposition, in particular sputtering and evaporation.

In general, in physical vapor deposition, a flux or ion beam in which a reaction gas is plasmalized with an ion source is used. Charging by ions or electrons may occur according to the use of plasma, and a high energy ion beam may be generated. There was a problem that the reaction gas process is made at a high temperature.

Therefore, the present invention has been invented to solve the above problems, it is possible to generate a neutral beam by having a reflector, the physical beam having a neutral beam generating device that can be applied to the physical vapor deposition, such as sputtering It is an object to provide a vapor deposition apparatus.

It is also an object of the present invention to provide a physical vapor deposition apparatus having a neutral beam generating apparatus capable of generating a neutral beam by applying a reflector and applying such a neutral beam to physical vapor deposition, for example, vacuum evaporation.

In addition, the present invention, since the reaction gas into a plasma, neutral beam using a reflector, irradiated to the substrate to be processed, according to the above problems, that is, the physical vapor deposition process is performed at a high temperature (or high energy) It is an object of the present invention to provide a physical vapor deposition apparatus having a neutral beam generator which reduces charging.

In addition, an object of the present invention is to provide a physical vapor deposition apparatus having a neutral beam generating device that provides a reflector structure capable of processing a large diameter substrate to be processed compared to the flux incidence plane size of the reflector.

In order to achieve the above object, the present invention, the ion source for extracting the ion beam having a polarity from the gas injected through the injection port, and located at one end of the ion source, a plurality of plural to accelerate the ion beam of a specific polarity A grid assembly having a grid hole formed therein, and a plurality of reflector holes corresponding to the grid holes of the grid assembly are formed, the reflector converting the ion beam passing through the grid hole from the reflector hole into a neutral beam A neutral beam generating device, and a stage positioned at an end of the reflector, into which gas may be injected through an injection hole, and a stage capable of positioning a substrate on the traveling path of the neutral beam generated by the reflector; A chamber in which the flux of the reactant to be deposited on the substrate to be processed is produced by sputtering The reflector hole of the reflector comprises a plurality of target portions, and the emission area A2 of the neutral beam flux emitted from the reflector is smaller than the flux incident area A1 at the incident surface on which the accelerated flux enters the grid assembly. It provides a physical vapor deposition apparatus having a neutral beam generating device, characterized in that it is formed to be large.

In one embodiment of the invention, the reflector and the plurality of target portions are located at one end, the stage is located at the other end opposite the one end, and the target portion and the reflector flux towards the stage. The film is deposited on the substrate to be processed on the stage by the flux irradiation.

In addition, in one embodiment of the present invention, the stage is formed to be cylindrical and configured to rotate, a plurality of the substrate to be processed on the circumferential surface of the stage, the neutral beam generating device and the target portion is Located in the reaction chamber opposite the circumferential surface of the stage, flux is generated towards the stage.

In addition, the present invention, an ion source for extracting the ion beam having a polarity from the gas injected through the injection hole, a grid assembly formed at one end of the ion source, a plurality of grid holes for accelerating the ion beam of a specific polarity and A neutral beam generating device having a plurality of reflector holes corresponding to the grid holes of the grid assembly, the reflector for reflecting the ion beams passing through the grid holes in the reflector holes and converting them into neutral beams; A reaction chamber including a stage positioned at an end of the reflector, into which gas may be injected through an injection hole, and including a stage to position a substrate to be processed on a path of a neutral beam generated by the reflector; And a plurality of source portions for evaporating the reactant to be deposited on the thermal or e-beam method. The reflector hole of the reflector is formed such that the emission area A2 of the neutral beam flux emitted from the reflector is larger than the flux incident area A1 at the incident surface where the accelerated flux is incident on the grid assembly. It provides a physical vapor deposition apparatus having a neutral beam generator.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention in more detail. The present invention is not limited to the embodiments disclosed below, but can be practiced in various forms by those skilled in the art within the scope of the appended claims. Accordingly, it is to be understood that the embodiments are provided only to make the disclosure of the present invention more complete, and to more fully convey the scope of the present invention to those skilled in the art.

FIG. 1 is a schematic view of a deposition apparatus with a neutral beam generator, FIG. 2 is a perspective view of the ion source and grid of FIG. 1, and FIG. 3 is a perspective view of the reflector of FIG.

The present invention implements more preferable conditions for the deposition process of the nanometer-class semiconductor device based on the above theoretical basis for the neutral beam, with reference to Figures 1 to 3 in detail with respect to the deposition apparatus used in the present invention see.

Referring to FIG. 1, an ion beam generated from an ion source 10 passes through a plurality of grid holes 14a having a constant diameter of a grid 14 positioned at a rear end of an ion source 10 on a path of an ion beam. After the reflection on the surface of the reflector hole 42 formed in the reflector 40 is converted into a neutral beam, it is incident on the substrate 20 to be irradiated with a specific layer of material on the substrate 20 to be processed. In the present invention, the neutral beam generator is constituted by the ion source, the grid, and the reflector.

The ion source 10 may generate an ion beam from various reaction gases injected through the gas injection port 11. In the present embodiment, the ion source 10 generates an plasma by applying an induced power to the induction coil 12. Although the plasma (ICP) generator is described as an example, it is a matter of course that an ion source modified in various forms can be used.

The rear end of the ion source 10 is coupled to the grid assembly 14 formed with a plurality of grid holes 14a through which the ion beam can be accelerated by applying a voltage and through which the ion beam can pass.

On the other hand, the Patent No. 0380660 of the applicant of the present invention discloses a grid structure consisting of an upper grid and a lower grid.

In addition, Korean Patent Application No. 10-2004-0014977, filed by the applicant of the present applicant, on the middle grid beam source for semiconductor etching using a triple grid, the upper first grid to which a positive voltage is applied, and an intermediate ground The second grid, the lower third grid to which the same positive voltage as the first grid is applied, and the first insulating layer between the first grid and the second grid, and the second insulating layer between the second grid and the third grid A grid structure is disclosed.

In addition, the US patent application No. 10-2004-0101685 "improved ion beam source", the applicant's prior application is formed on the circumferential surface or ion beam passage of the insulating layer by minimizing the contact area between the insulating layer and the grid A grid structure is disclosed to prevent a decrease in the amount of flux flowing into the lower grid while significantly reducing the probability of occurrence of conductive paths, and to prevent breakage of the insulating layer caused by the difference in thermal expansion.

On the other hand, the rear end of the grid 14 is in close contact with the reflector 40 which reflects the incident ion beam and converts it into a neutral beam. The reflector 40 may be made of a semiconductor, silicon oxide, metal, or the like, and only the surface of the reflector hole 42 in the reflector 40 may be made of these materials. In this case, the surface of the reflector hole 42 may be coated with a diamond like carbon (DLC).

Meanwhile, the reflector holes 42 are inclined at a constant angle θ _d with respect to the straight direction A of the ion beam so that the ion beam passing through the grid hole 14a and going straight through is reflected in the reflector hole 42. .

The reflector 40 is preferably grounded for discharge of charge generated by the incident ion beam. In addition, although shown in FIG. 3 in a cylindrical shape, the reflector 40 is not necessarily limited to a cylindrical shape and may be manufactured in various shapes, for example, polygonal pillar shapes such as quadrangles.

In addition, in FIG. 3, although the reflector hole 42 is illustrated in a cylindrical shape, the reflector hole 42 having a large columnar shape such as a rectangle or a polygon may be formed without being limited thereto. In particular, when implementing the actual deposition apparatus, as described in the patent application No. 10-2003-0042116 of the present inventors, instead of the reflector hole 31, the slit portion and the reflecting surface is formed in the reflector 40. This formation of the slit portion solves the problem of narrowing the space of the reflector portion.

On the other hand, the inclination of the reflector hole is formed so that the ion beam going straight after passing through the grid hole is reflected only once in the reflector hole 42. In this embodiment, the inclination of the reflector hole is such that the incidence angle θ _i of the ion beam incident on the inner surface of the reflector hole is within at least 15 °, and is preferably configured to be within at least 5 ° to 15 °. The incidence angle of the ion beam in the range of at least 5 ° to 15 ° means that the incidence angle based on a normal perpendicular to the surface of the reflector hole is at least 75 ° to 85 °.

Further, the reflection angle θ _r of the neutral beam reflected from the surface of the reflector hole in the reflector is configured to be in the range of 5 ° to 40 °.

According to the applicant of the present invention, it can be seen that the optimum amount of neutral beam flux can be obtained under the above incident angle and reflection angle conditions.

On the other hand, in the reflector 40-1 according to another embodiment of the present invention shown in FIG. 4, the reflector hole 42-1 of the reflector 40-1 is the central axis c of the reflector 40-1. A plurality of circumferential directions r (circumferential direction from the central axis c to the rim surface when the reflector is a polygonal shape) around the plurality of circumferences are formed at the same time and are inclined at a predetermined angle (θ _c ) with respect to the central axis. The state is shown (see FIG. 4A). For example, the reflector hole 42-1 starts at the incident surface 1 of the reflector 40-1, that is, starts on a two-dimensional plane formed between the circumferential direction r and the tangential direction l, and the tangent In the two-dimensional plane formed by the direction (l) and the axial direction (c) to form a predetermined angle (θ _c ) with the center direction toward the exit surface (2) of the reflector, wherein the circumference of one of the circumferential direction The plurality of reflector holes 42-1 formed on the direction r are configured to be three-dimensionally parallel to each other, and three-dimensionally to the plurality of reflector holes 42-1 formed on the adjacent circumferential direction r '. It is configured so as not to be parallel to each other (see Fig. 4 (b) and Fig. 4 (c)). Here, the two-dimensional plane formed by the circumferential direction r and the tangential direction l and the two-dimensional plane formed by the tangential direction l and the axial direction c are perpendicular to each other.

In this case, the inclination θ _c of the reflector hole 42-1 is formed such that an ion beam traveling straight after passing through the grid hole is reflected only once in the reflector hole 42-1, and the inclination of the reflector hole is The incidence angle θ _i of the ion beam incident on the inner surface is configured to be within at least 15 °, and preferably within at least 5 ° to 15 °. Further, the reflection angle θ _r of the neutral beam reflected from the surface of the reflector hole in the reflector is configured to be in the range of 5 ° to 40 °.

FIG. 5 is a view showing the effect of the structure of the reflector 42-1 of FIG. 4, in which a neutral beam flux passing through the grid and whose neutral incidence area is defined by a radius r1 passes through the reflector 40-1. After that, the state in which the flux exit area A2 has a larger radius r2 greater than the predetermined radius r1 of the flux incidence area A1 of the reflector 40-1 is schematically shown. That is, as the ion beam passes through the reflector 40-1, the generated flux density decreases, but the area larger than the flux incident area A1 of the reflector 40-1 is irradiated.

Here, the flux incidence area and the flux exit area are represented by a circle having a radius for convenience of description, but the present invention is not limited thereto, and the incidence area according to the method of forming the reflector hole 42-1 on the reflector is described. And the emission area may take a variety of forms, including circular or rectangular shape.

On the other hand, the substrate 20 to be processed is disposed on the traveling path of the neutral beam reflected and converted from the reflector 40. The substrate 20 is mounted on the stage 60 in the reaction chamber 50 maintained at a constant vacuum by a vacuum device (not shown) which may be configured with a rotary pump, a booster pump or a turbo pump. The stage 60 may be disposed in a vertical direction with respect to the traveling path of the neutral beam, and may be installed such that its position and direction are controlled so as to be tilted at a predetermined angle according to the type of deposition process. have. On the other hand, the reaction chamber 50 is injected with a variety of gases, if necessary, a mass flow controller (MFC) is provided, a gas injection port 51 for precisely controlling the amount of injection gas is formed, the stage 60 The heater 61 is provided for heating the substrate 20 to be processed.

(First embodiment)

FIG. 6 is a view illustrating a physical vapor deposition apparatus 100, that is, a sputter apparatus 100, according to an embodiment having a neutral beam generator, wherein a first reactant to be deposited on a substrate 20, for example, Ti The first target portion 110 in which the flux is generated, the second target portion 120 in which other fluxes to be deposited on the substrate to be processed, such as the second target portion 120 in which the Si flux is generated, and the neutral beam having the above-described structure generating the neutral beam The generator 130 is configured. Here, the target parts 110 and 120 and the neutral beam device 130 are provided at the lower part of the figure, and the stage 60 on which the substrate 20 to be loaded is loaded is provided at the upper part. Meanwhile, although two target parts 110 and 120 are illustrated in FIG. 6, a plurality of target parts 110 and 120 may be provided. In the meantime, the description of the reference numerals described together with the neutral beam generator will be omitted.

Referring to the operation of the sputtering apparatus 100, first, the substrate 20 to be processed is placed on the stage 60 in the reaction chamber 50, and the inside of the chamber is made into a high vacuum state by using a vacuum pump, such as impurities. To form a thin film forming environment, and then irradiate the neutral beam or ion beam into the reaction chamber by applying Ar gas and oxygen gas to the neutral beam generator and applying power to dry clean the substrate 20 (pretreatment process). ).

On the other hand, the first target portion 110 is provided with a compound containing Ti as a first target, and the second target portion 120 is provided with a compound containing Si as a second target.

Subsequently, Ar gas is supplied to the first target unit 110 in the vicinity of the first target unit 110 through a gas inlet 51 through a power supply 111, for example, in a state where a pulsed DC power is applied. After accelerating and introducing into the first target part 110, the first target part 110 is collided to sputter the first target, and the neutral beam is introduced into the neutral beam generator, for example, only oxygen gas is generated to irradiate the substrate to be processed (first 1 thin film layer formation process).

Accordingly, the first thin film layer, for example, a TiO ₂ film, is deposited on the substrate 20 to be treated while chemically bonding the ion beam flux by the sputtering of the first target portion and the neutral beam flux generated by the neutral beam generator. If necessary, TiO ₂ , Ta ₂ O ₅ , ZrO ₂ , Nb ₂ O ₅ , Nb ₂ O ₃ , HfO _2, and the like may be formed as the first thin film layer.

The reaction residue in the reaction chamber is then removed using an exhaust pump, not shown (reaction residue removal process).

Subsequently, Ar gas is supplied to the second target unit 120 via the power supply unit 121, for example, through the gas inlet 51 while the pulsed DC power is applied to the second target unit 120. After accelerating and introducing into the second target portion, the second target portion is collided to sputter the second target, and at the same time, the neutral beam is introduced into the neutral beam generator, for example, only a neutral beam is generated to irradiate the substrate to be processed (second Thin film layer forming process). At this time, the power supply to the first target unit 110 by the power supply unit 111 is stopped.

Accordingly, the ion beam flux generated by the sputtering of the second target portion 120 and the neutral beam flux generated by the neutral beam generator 130 are formed on the substrate 20 on which the first thin film (TiO ₂ film) layer is formed. While chemically bonding, a second thin film layer, such as a SiO ₂ film, is formed. If necessary, SiO ₂ , MgF ₂ , ThF _4, etc. may be formed as the second thin film layer.

The reaction residue in the reaction chamber is then removed using an exhaust pump, not shown (reaction residue removal process).

Here, the first thin film (eg, TiO ₂ film) layer has a higher refractive index than the second thin film layer (eg, SiO ₂ film).

Therefore, the high refractive index layer and the low refractive layer are alternated by repeating the series of pretreatment steps, the first thin film layer forming step, the reaction residue removing step, the second thin film layer forming step, and the reaction residue removing step many times. It will create a substrate.

Second Embodiment

On the other hand, Figure 7 is a view illustrating a sputtering apparatus 200 according to another embodiment having a neutral beam generator 230, the first reactant, for example Ti flux to be deposited on the substrate 20 to be generated The first target portion 210, another second reactive material to be deposited on the substrate to be processed, for example, the second target portion 220 in which the Si flux is generated, the neutral beam generator 230 having the above-described structure for generating a neutral beam ) Is configured. Here, the target portions 210 and 220 and the neutral beam device 230, for example, is provided on the side of the reaction chamber 50 shown in a cylindrical shape, the stage 60-1 on which the substrate 20 to be loaded is loaded. The center of the reaction chamber 50 is configured to form a cylindrical (drum shape). Here, the plurality of substrates 20 to be processed are loaded along the circumferential direction on the side of the cylindrical stage 60-1. In addition, this stage 60-1 is configured to rotate in a clockwise or counterclockwise direction as indicated by both arrows by a rotation apparatus not shown. Meanwhile, although two target portions 210 and 220 are illustrated in FIG. 7, a plurality of target portions 210 and 220 may be provided.

Referring to the operation of the sputtering apparatus 200, first, the substrate 20 to be processed is placed on the stage 60-1 in the reaction chamber 50, and the inside of the chamber is made into a high vacuum state using a vacuum pump. By removing impurities and the like to create a thin film forming environment, by inputting Ar gas and oxygen gas to the neutral beam generator and applying power, the neutral substrate or ion beam is irradiated into the reaction chamber to dry clean the substrate 20 (pretreatment). process).

On the other hand, the first target portion 210 is provided with a compound containing Ti as a first target, and the second target portion 220 is provided with a compound containing Si as a second target.

Subsequently, near the first target portion 210, Ar gas is supplied to the first target portion 210 through the power supply device 211, for example, through the gas inlet 51 while the pulsed DC power is applied. After introducing and accelerating to the first target portion 210, the first target portion 210 to sputter the first target and at the same time to introduce the neutral beam generating device 230, for example, only the oxygen gas to generate and rotate the neutral beam stage 60 -1) A plurality of substrates to be processed are irradiated (first thin film layer forming step).

Accordingly, a first thin film layer such as a TiO ₂ film is deposited on the plurality of substrates 20 while chemically combining the ion beam flux by the sputtering of the first target portion and the neutral beam flux generated by the neutral beam generator. .

Subsequently, the reaction residue in the reaction chamber 50 is removed using an exhaust pump not shown (reaction residue removal process).

Subsequently, Ar gas is supplied to the second target unit 220 through the power supply unit 221, for example, through the gas inlet 51 while the pulsed DC power is applied to the second target unit 220. After accelerating and introducing into the second target portion, the second target is sputtered to sputter the second target, and a plurality of stages on the stage 60-1 that generate and rotate the neutral beam by introducing only oxygen gas, for example, into the neutral beam generator are provided. The substrate to be processed is irradiated (second thin film layer forming step). At this time, power supply to the first target unit by the power supply unit 221 is stopped.

Accordingly, the ion beam flux by sputtering of the second target portion 220 and the neutral beam flux generated by the neutral beam generator are chemically bonded on the substrate 20 on which the first thin film (TiO ₂ film) layer is formed. In doing so, a second thin film layer, such as a SiO ₂ film, is formed.

The reaction residue in the reaction chamber is then removed using an exhaust pump, not shown (reaction residue removal process).

Therefore, as the pretreatment process, the first thin film forming process, the reaction residue removing process, the second thin film forming process, and the reaction residue removing process are performed a plurality of times, a plurality of alternating high and low refractive layers are alternated. Will produce two substrates.

(Third Embodiment)

FIG. 8 is a view illustrating a physical vapor deposition apparatus, that is, a vacuum evaporation apparatus 300 according to an embodiment with a neutral beam generator, wherein a reactant, for example, a Ti flux, to be deposited on a substrate 20 is thermal ( A source unit 310 generated by a thermal or E-beam method and a neutral beam generator 330 having the above-described structure for generating a neutral beam are configured. Here, the source unit 310 and the neutral beam device 330 is provided in the lower portion of the reaction chamber 50 in the drawing, the stage 60 to which the substrate 20 to be loaded is the upper portion of the reaction chamber 50 Is provided. Meanwhile, although one source unit 310 is illustrated in FIG. 8, a plurality of source units 310 may be provided.

Referring to the operation of the vacuum evaporation apparatus 300, first, the substrate 20 to be processed is placed on the stage 60 in the reaction chamber 50, and the inside of the chamber is made into a high vacuum state by using a vacuum pump, and impurities By removing the light and the like to create a thin film forming environment, and then applying Ar gas and oxygen gas to the neutral beam generating device and applying power, the neutral substrate or ion beam is irradiated into the reaction chamber to dry clean the substrate 20 (pretreatment). process).

On the other hand, the first source portion 310 is provided with a compound containing Ti as a first target, and the compound containing Si is provided as a second target in the second source portion not shown.

Subsequently, the neutral beam is generated while the Ti-containing compound is evaporated and deposited on the substrate 20 by applying, for example, a pulsed DC power supply to the first source portion 310 through the power supply device 311. By introducing oxygen or nitrogen gas into the apparatus, for example, a neutral beam is irradiated to the substrate to be processed so that the first thin film layer containing Ti is formed on the substrate to be processed (first thin film layer forming step).

Accordingly, the first thin film layer, for example, a TiO ₂ film, is deposited on the substrate 20 to be treated while chemically combining the ion beam flux by the compound evaporation of the first source portion and the neutral beam flux generated by the neutral beam generator. If necessary, TiO ₂ , Ta ₂ O ₅ , ZrO ₂ , Nb ₂ O ₅ , Nb ₂ O ₃ , HfO _2, and the like may be formed as the first thin film layer.

The reaction residue in the reaction chamber is then removed using an exhaust pump, not shown (reaction residue removal process).

Subsequently, by applying, for example, a pulsed DC power supply to the second target portion not shown, the Si-containing compound is evaporated and deposited on the substrate 20 to be processed, and at the same time, for example, oxygen is generated in the neutral beam generator. Alternatively, a nitrogen beam is introduced to generate a neutral beam and irradiated to the substrate, whereby a second thin film layer containing Si is formed on the substrate to be processed (second thin film layer forming step). At this time, the supply of power to the first source unit 310 by the power supply device 311 is stopped.

Accordingly, the ion beam flux by the evaporation of the second source portion and the neutral beam flux generated by the neutral beam generator 330 are chemically bonded on the substrate 20 on which the first thin film (TiO ₂ film) layer is formed. , A second thin film layer, such as a SiO ₂ film, is formed. If necessary, SiO ₂ , MgF ₂ , ThF _4, etc. may be formed as the second thin film layer.

The reaction residue in the reaction chamber is then removed using an exhaust pump, not shown (reaction residue removal process).

Here, the first thin film layer (eg, TiO ₂ film) has a higher refractive index than the second thin film layer (eg, SiO ₂ film).

Therefore, the high refractive index layer and the low refractive layer are alternated by repeating the series of pretreatment steps, the first thin film layer forming step, the reaction residue removing step, the second thin film layer forming step, and the reaction residue removing step many times. It will create a substrate.

The present invention described above is not limited to the above-described embodiment and the accompanying drawings, and various changes can be made without departing from the technical spirit of the present invention. It will be obvious to him.

According to the above description, the neutral beam can be generated by providing the reflector, and this neutral beam can be applied to physical vapor deposition, for example, sputtering.

In addition, by providing a reflector, a neutral beam can be generated, and this neutral beam can be applied to physical vapor deposition, for example, vacuum evaporation.

In addition, an object of the present invention is to provide a physical vapor deposition apparatus having a neutral beam generator that provides a reflector structure capable of processing a large diameter substrate to be processed compared to the flux incidence plane size of the reflector.

Claims (7)

A grid assembly having an ion source for extracting an ion beam having a polarity from a gas injected through an injection hole, a grid assembly formed at one end of the ion source and accelerating an ion beam having a specific polarity, and a grid of the grid assembly A neutral beam generating device having a plurality of reflector holes corresponding to the holes, and having a reflector for reflecting the ion beam passing through the grid hole in the reflector hole and converting the ion beam into a neutral beam; A reaction chamber positioned at an end of the reflector, through which a gas may be injected, and including a stage for positioning a substrate on the traveling path of the neutral beam generated by the reflector; Flux of the reactant to be deposited on the substrate to be processed is provided with a plurality of target portions generated by sputtering, The reflector hole of the reflector is formed such that the emission area A2 of the neutral beam flux emitted from the reflector is larger than the flux incident area A1 at the incident surface where the accelerated flux is incident on the grid assembly. Physical vapor deposition apparatus having a neutral beam generating device, characterized in that different reactants are generated by each of the plurality of target portions. The method of claim 1, wherein the reflector and the plurality of target portions are located at one end, and the stage is located at the other end opposite the one end, And the target portion and the reflector irradiate flux toward the stage, and a film is deposited on the substrate to be processed on the stage by the flux irradiation. The method of claim 1, wherein the stage is formed in a cylindrical shape and rotatable, a plurality of the substrate to be processed on the circumferential surface of the stage, And the neutral beam generator and the target portion are located in a reaction chamber facing the circumferential surface of the stage to generate flux toward the stage. A grid assembly having an ion source for extracting an ion beam having a polarity from a gas injected through an injection hole, a grid assembly formed at one end of the ion source and accelerating an ion beam having a specific polarity, and a grid of the grid assembly A neutral beam generating device having a plurality of reflector holes corresponding to the holes, and having a reflector for reflecting the ion beam passing through the grid hole in the reflector hole and converting the ion beam into a neutral beam; A reaction chamber positioned at an end of the reflector, through which a gas may be injected, and including a stage for positioning a substrate on the traveling path of the neutral beam generated by the reflector; Comprising a plurality of source portion for evaporating the reactant to be deposited on the substrate to be thermally or e-beam method, The reflector hole of the reflector is formed such that the emission area A2 of the neutral beam flux emitted from the reflector is larger than the flux incident area A1 at the incident surface where the accelerated flux is incident on the grid assembly. Physical vapor deposition apparatus having a neutral beam generating device, characterized in that different compounds are installed in each of the plurality of source portions. The reflector hole is formed in plural in the direction from the center axis c of the reflector toward the rim, and is inclined at a predetermined angle θ _c with respect to the center axis. The plurality of reflector holes formed on one of the plurality of directions r from the axis toward the edge plane are configured to be parallel to each other three-dimensionally, and the plurality of reflector holes formed on the other plurality of directions r 'from the center axis toward the edge plane. Physical vapor deposition apparatus having a neutral beam generating device, characterized in that it is configured not to be parallel with the reflector hole in three dimensions. The physical vapor deposition apparatus according to claim 1 or 4, wherein an incident angle of the ion beam incident on the reflector hole is within 15 degrees. The physical vapor deposition apparatus according to claim 1 or 4, wherein a reflection angle of the ion beam reflected from the surface of the reflector hole or the slit portion in the reflector is 5 ° to 40 °.

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