KR100691618B1 - Neutral beam deposition apparatus used in Chemical vapor deposition method - Google Patents

Abstract

The present invention provides a plasma processing apparatus comprising an ion source for extracting an ion beam having a polarity from a gas injected through an injection port, a grid assembly disposed at one end of the ion source and having a plurality of grid holes for accelerating ion beams of a specific polarity, A neutral beam generator having a plurality of reflector holes corresponding to the grid holes of the grid assembly and configured to reflect the ion beams passing through the grid holes into the reflector holes and convert the ion beams into neutral beams; And a stage capable of injecting a gas through the injection port and capable of positioning the substrate to be processed on the progress path of the neutral beam, wherein the reflector hole of the reflector The flux incident area A1 on the incident surface at which the accelerated flux is incident on the grid assembly is higher than the flux incident area A1 The emitting area (A2) of the neutral beam flux emitted from is formed so as to be larger.

Neutral beam, grid, reflector, ion beam, incident angle, deposition

Description

[0001] The present invention relates to a chemical vapor deposition apparatus having a neutral beam generating apparatus,

1 is a schematic view of a deposition apparatus according to an embodiment of the present invention,

FIG. 2 is a perspective view schematically showing an ion source of the deposition apparatus shown in FIG. 1,

FIG. 3 is a perspective view schematically showing a neutral beam generator (reflector) of the deposition apparatus shown in FIG. 1,

4 is a schematic view for explaining a reflector according to another embodiment of the present invention,

5 is a view schematically illustrating an effect expected by installing the reflector of another embodiment of the present invention in a neutral beam generator.

[Description of Drawings]

10; Ion source 12; Induction coil

14; Grid 14a; Grid hole

20; A substrate to be processed 40; reflector

42; Reflector hole 50; The reaction chamber

60; stage.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a deposition apparatus used in chemical vapor deposition (CVD), and more particularly, to a deposition apparatus used for chemical vapor deposition (CVD) To a chemical vapor deposition apparatus having a neutral beam generating apparatus.

As the demand for high integration of semiconductor devices continues, design rules have been further reduced in the design of semiconductor integrated circuits in recent years, and a critical dimension of 90 nm or less is required. At present, ion enhancement devices such as a high density plasma device and a reactive ion etcher are mainly used as devices for implementing such nanometer class semiconductor devices. However, in such equipment, there is a large amount of ions for carrying out a deposition (or etching) process, and since these ions impinge on the semiconductor substrate or a specific material layer on the semiconductor substrate with an energy of several hundred eV, Causing physical and electrical damage.

For example, as a physical impairment, the surface of a crystalline substrate or a specific material layer that is impinging upon such ions may be converted to an amorphous layer, and only a portion of the material layer in which some of the incident ions are adsorbed or impinged may be selectively The chemical composition of the surface layer that is desorbed and deposited (or etched) may change, and the atomic bonds of the surface layer may be broken by the collision, resulting in a dangling bond. Such dangling bonds may cause electrical damage as well as physical damage to the material. In addition, the dangling bonds may cause charge damage of the gate insulating film or notching of the polysilicon due to charging of the photoresist Causing electrical damage. In addition to such physical and electrical damage, surface contamination by reaction gases such as contamination by chamber materials or generation of C-F polymer in the case of using CF-based reaction gas may occur.

Therefore, in the case of a nanometer-scale semiconductor device, physical and electrical damage caused by such ions lowers the reliability of the device and further lowers the productivity. Therefore, in order to meet the trend of high integration of semiconductor devices and a decrease in the design rule, There is a need for development of new concepts of semiconductor deposition (or etching) devices and methods that can be applied.

In this paper, DBOakes et al. Proposed an unbreakable etching technique using superheated atomic beam in Selective, Anisotropic and Damage-Free SiO ₂ Etching with a Hyperthermal Atomic Beam, Takashi Yunogami et al. Developed a neutral beam and a neutral radical at the development of neutral-beam-assisted etcher (J.Vac. Sci. Technol. A 13 (3), May / June, MJ Goeckner et al. Have proposed a silicon oxide etch technique with very little damage using the method of the present invention. In the article "Reduction of Residual Charge in Surface-Neutralization-Based Beams" (1997 2nd International Symposium on Plasma Process -Induced Damage. May 13-14, Monterey, Cal.) Discloses an etch technique for a charge-free superheated neutral beam instead of a plasma.

On the other hand, the applicant of the present invention has developed a semiconductor device using a neutral beam, which is registered in Korean Patent Registration No. 0412953 and registered as Patent No. 0380660, based on the contents of the above- Discloses an etching method and an etching apparatus for the same, which discloses a technique of a reflector for converting an ion beam into a neutral beam and an etching method using an apparatus having a reflector, .

However, these patents, which disclose a reflector for converting an ion beam into a neutral beam, can be used for chemical vapor deposition through an improvement.

Generally, in the chemical vapor deposition process, a flux or an ion beam is used in which a reaction gas is converted into an ion source. In this case, charging of ions or electrons may occur depending on the use of the plasma, There is a problem that the reaction gas process is performed at a high temperature.

In order to overcome such a problem, a remote plasma method has been disclosed. However, when remote plasma is used, there is a problem that flux and energy are reduced.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a chemical vapor deposition apparatus having a neutral beam generator capable of generating a neutral beam by including a reflector, The purpose is to provide.

In addition, the present invention irradiates the target substrate after converting the reaction gas into a plasma beam by using a reflector and forming a middle beam, and the above problem, that is, charging due to the problem that the CVD process is performed at a high temperature And to provide a chemical vapor deposition apparatus equipped with a neutral beam generating device for reducing the amount of generated light.

It is another object of the present invention to provide a reflector structure provided in a neutral beam generating apparatus capable of processing a large-diameter substrate to be processed in comparison with a flux incident surface size of a reflector in a CVD process.

Further, a chemical vapor deposition apparatus having a neutral beam generating apparatus capable of performing a CVD process of a substrate to be processed in a large diameter without significant hindrance, and significantly reducing charging is provided as compared with the conventional case in which an ion beam is used .

In order to achieve the above object, the present invention provides an ion implantation apparatus comprising: an ion source for extracting an ion beam having a polarity from a gas injected through an injection port; and a plurality of ion sources for accelerating ion beams of a specific polarity A plurality of reflector holes corresponding to the grid holes of the grid assembly are formed in the grid hole and a reflector for converting the ion beam passing through the grid hole into the neutral beam, And a reaction chamber positioned at an end of the reflector and capable of injecting gas through an injection port and capable of positioning a substrate to be processed on the path of the neutral beam, The reflector hole of the reflector may be formed in a shape such that the incidence plane And an emission area A2 of the neutral beam flux emitted from the reflector is larger than a flux incident area A1 of the neutral beam emitted from the reflector.

The reflector holes of the present invention are formed in a plurality of directions along the direction from the center axis (c) of the reflector toward the rim, inclined at a predetermined angle (? _C ) with respect to the central axis, The plurality of reflector holes formed on one of the plurality of directions facing the plurality of reflector holes are three-dimensionally parallel to each other, and are not three-dimensionally parallel to the plurality of reflector holes formed in the plurality of different directions from the center axis to the edge surface .

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. It is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, it is to be understood that these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

FIG. 1 is a schematic view of a deposition apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view of the ion source and the grid of FIG. 1, and FIG. 3 is a perspective view of the reflector of FIG.

The present invention realizes a more preferable condition for a CVD process of a nanometer-scale semiconductor device based on the above theoretical rationale for a neutral beam, and thus the deposition apparatus used in the present invention is specifically described with reference to FIGS. 1 to 3 see.

1, an ion beam generated from an ion source 10 passes through a plurality of grid holes 14a having a constant diameter of a grid 14 positioned at a rear end of an ion source 10 in the course of the ion beam Reflected by the surface of the reflector hole 42 formed in the rear reflector 40 and then converted into a neutral beam and is incident on the target substrate 20 to irradiate a specific material layer on the target substrate 20. In the present invention, the neutral beam generator is composed of the ion source 10, the grid 14, and the reflector 40.

The ion source 10 is capable of generating an ion beam from various reaction gases injected through the gas inlet 11. In this embodiment, the inductive coupling 12 for generating plasma by applying inductive power to the induction coil 12 Although an apparatus for generating plasma (ICP) is described as an example, it is needless to say that ion sources modified in various forms can be used.

A grid assembly 14 having a plurality of grid holes 14a capable of accelerating an ion beam by applying a voltage and capable of passing an ion beam is coupled to the rear end of the ion source 10.

On the other hand, the registered patent No. 0380660 of the applicant of the present invention discloses a grid structure composed of an upper grid and a lower grid.

In addition, Korean Patent Application No. 10-2004-0014977, entitled " SEMICONDUCTOR ETCH FOR SEMICONDUCTOR ETCHING USE WITH TRIPLE GRIDS ", which is selected by the applicant of the present application, includes a first upper grid to which a positive voltage is applied, A second grid, a lower third grid to which the same positive voltage as the first grid is applied, and a first insulation layer between the first grid and the second grid, and a second insulation layer between the second grid and the third grid. A grid structure is disclosed.

In addition, US Patent Application No. 10-2004-0101685 entitled " Improved Ion Beam Source ", which is the applicant's elected cause, is provided for minimizing the contact area between the insulating layer and the grid to form on the circumferential surface of the insulating layer or on the ion beam path A possibility of occurrence of a conductive path which can be reduced is significantly reduced, a decrease in the amount of flux flowing into the lower grid is prevented, and further, damage to the insulating layer caused by a difference in thermal expansion is prevented.

On the other hand, a reflector 40 for reflecting the incident ion beam and converting it into a neutral beam is closely attached to the rear end of the grid 14. The material of the reflector 40 may be a semiconductor, a silicon oxide, a metal, or the like. Only the surface of the reflector hole 42 in the reflector 40 may be made of these materials. At this time, the surface of the reflector hole 42 may be coated with diamond like carbon (DLC).

The reflector holes 42 are inclined at an angle? _D with respect to the straight direction A of the ion beam so that the ion beam traveling straight through the grid hole 14a is reflected in the reflector hole 42 .

The reflector 40 is preferably grounded to discharge charges generated by the incident ion beam. 3, the reflector 40 is not necessarily limited to a cylindrical shape, but may be formed in various shapes, for example, a polygonal column shape such as a quadrangle.

3, the reflector hole 42 is shown as a cylindrical shape, but it is needless to say that a reflector hole 42 having a large number of columns such as a rectangular or polygonal shape may be formed. Particularly, when real deposition apparatus is implemented, a slit portion and a reflection surface are formed inside the reflector 40 instead of the reflector hole 31 as described in the patent application No. 10-2003-0042116 of the present inventor. The formation of such a slit portion solves the problem of space narrowing of the reflector portion.

On the other hand, the inclination of the reflector hole is formed such that the ion beam, which is straight after passing through the grid hole, is reflected only once in the reflector hole 42. In this embodiment, the inclination of the reflector holes is such that the incident angle [theta] _i of the ion beam incident on the inner surface of the reflector hole is at least 15 [deg.], Preferably at least 5 [deg.] To 15 [deg.]. The angle of incidence of the ion beam in the range of at least 5 ° to 15 ° means that the angle of incidence with respect to the normal perpendicular to the surface of the reflector hole is at least 75 ° to 85 °.

The reflection angle? _R of the neutral beam reflected from the surface of the reflector hole in the reflector is in the range of 5 to 40 degrees.

According to the applicant of the present invention, it can be seen that an optimum neutral beam flux amount can be obtained at the incident angle and the reflection angle as described above.

On the other hand, in the reflector 40-1 according to another embodiment of the present invention shown in Fig. 4, the reflector hole 42-1 of the reflector 40-1 is located at the center axis c of the reflector 40-1, A plurality of circumferential r directions (a direction from the central axis c toward the rim surface when the reflector is a polygonal shape) and a plurality of circumferential r directions inclined at a predetermined angle? _C with respect to the central axis (See Fig. 4 (a)). For example, the reflector hole 42-1 starts on the incident plane 1 of the reflector 40-1, that is, on the two-dimensional plane formed by the circumferential direction r and the tangential direction 1, Is formed to be directed toward the exit surface (2) of the reflector while forming a certain angle (? _C ) with the center direction on a two-dimensional plane formed by the direction (1) and the axial direction (c) The plurality of reflector holes 42-1 formed on the direction r are configured to be three-dimensionally parallel to each other and the plurality of reflector holes 42-1 formed on the adjacent circumferential direction r ' (See Fig. 4 (b) and Fig. 4 (c)). Here, the two-dimensional plane formed by the circumferential direction (r) and the tangential direction (1) and the two-dimensional plane formed by the tangential direction (l) and the axial direction (c) are orthogonal to each other.

At this time, the inclination (? _C ) of the reflector hole (42-1) is formed such that the ion beam traveling straight after passing through the grid hole is reflected only once in the reflector hole (42-1), and the inclination of the reflector hole The incident angle [theta] _i of the ion beam incident on the inner surface is set to be at least 15 [deg.], Preferably at least 5 [deg.] To 15 [deg.]. The reflection angle? _R of the neutral beam reflected from the surface of the reflector hole in the reflector is in the range of 5 to 40 degrees.

5 shows the effect of the structure of the reflector 40-1 shown in Fig. 4, in which a neutral beam flux passing through the grid defined by the radius r1 defines the flux incident area passes through the reflector 40-1 And the flux emergence area A2 is obtained according to the enlarged radius r2 which is larger than the predetermined radius r1 of the flux incidence area A1 of the reflector 40-1 r2 > r > r1). That is, as the ion beam passes through the reflector 40-1, the flux density generated is reduced, but the area is larger than the flux incidence area A1 of the reflector 40-1.

Here, for convenience of explanation, the flux incident area A1 and the flux emergent area A2 are represented by circles having a radius. However, the present invention is not limited to this, and the reflector holes 42-1 may be formed on the reflector It is needless to say that the incidence area and the emergence area may take various forms including a circular shape or a rectangular shape.

On the other hand, the target substrate 20 is disposed on the progress path of the neutral beam reflected from the reflector 40 and converted. The substrate 20 is placed on a stage 60 in a reaction chamber 50 maintained at a constant degree of vacuum by a vacuum device (not shown), which may be configured with a rotary pump, a booster pump or a turbo pump The stage 60 may be disposed in a direction perpendicular to the path of the neutral beam and may be disposed so that its position and direction are controlled so as to be tilted at a predetermined angle depending on the type of the deposition process . A gas injection port 51 for precisely controlling an amount of gas to be injected is provided in the reaction chamber 50 and a mass flow controller (MFC) A heater 61 for heating the substrate 20 is provided.

Hereinafter, a CVD process according to an embodiment using the above-described neutral beam deposition apparatus will be schematically described.

First, the target substrate 30, which may be a glass or a silicon wafer, is loaded on the stage 60 in the reaction chamber 50 (first step).

Subsequently, the inside of the chamber 50 is evacuated by using a vacuum pump to remove impurities and the like, thereby forming a thin film forming environment (second step).

Subsequently, argon gas and oxygen gas are introduced into the neutral beam generator, and a neutral beam is irradiated into the reaction chamber by applying power, thereby dry-cleaning the substrate 20 (third step).

Subsequently, the first reaction gas is supplied through the gas injection port 51 equipped with the mass flow controller (MFC) to be adsorbed on the substrate 20 (step 4).

Subsequently, the second reaction gas is supplied through the gas inlet (11) of the ion source (10), and the neutral beam flux generated by the neutral beam generator is reacted with the first reaction gas, And is deposited on the processing substrate 20 (fifth step).

Subsequently, by-products generated according to the reaction between the first reaction gas and the second reaction gas are discharged (Step 6).

On the other hand, if the fourth to sixth steps are described as examples of the deposition of a silicon layer, a chemical reaction proceeds as follows.

SiCl ₄ (first reaction gas) + 2H ₂ (second reaction gas) Si (thin film) + 4HCl (by-product)

SiHCl ₃ (first reaction gas) + H ₂ (second reaction gas) Si (thin film) + 3HCl (by-product)

SiH ₂ Cl ₂ (first reaction gas) + Cl ₂ (second reaction gas) Si (thin film) + 4HCl (byproduct).

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be obvious to the person.

According to the above description, there is provided a chemical vapor deposition apparatus having a neutral beam generator capable of generating a neutral beam by providing a reflector, and applying such a neutral beam to a CVD process, It is possible to provide a reflector structure capable of processing a large-diameter target substrate.

In addition, since charging is reduced due to the problem that the CVD process is performed at a high temperature (or high energy), and the amount of flux is not significantly reduced compared with the case of using a conventional ion beam, the CVD process of the substrate of large diameter can be performed without hindrance , The charging effect is remarkably reduced

Claims (4)

An ion source for extracting an ion beam having a polarity from a gas injected through an injection port; a grid assembly disposed at one end of the ion source and having a plurality of grid holes for accelerating an ion beam of a specific polarity; A neutral beam generator having a plurality of reflector holes corresponding to the holes and configured to reflect an ion beam passing through the grid holes into the reflector holes and convert the ion beams into neutral beams; And a reaction chamber positioned at an end of the reflector and capable of injecting gas through an injection port and capable of positioning a substrate to be processed on the path of the neutral beam, Wherein the reflector hole of the reflector is formed such that the emergent area A2 of the neutral beam flux emitted from the reflector is larger than the flux incident area A1 of the incident surface on which the accelerated flux is incident, A chemical vapor deposition apparatus having a neutral beam generator. The reflector according to claim 1, wherein a plurality of reflector holes are formed along the direction from the central axis (c) of the reflector toward the rim, inclined at a predetermined angle? _C with respect to the central axis, A plurality of reflector holes formed on one of the plurality of directions r 'facing the center axis are configured to be three-dimensionally parallel to each other, and a plurality of reflector holes formed on the other plurality of directions r' Wherein the neutral beam generating device is configured so as not to be three-dimensionally parallel. The chemical vapor deposition apparatus according to claim 1, wherein an incident angle of the ion beam incident on the reflector hole is within 15 degrees. The chemical vapor deposition apparatus according to claim 1, wherein the reflection angle of the ion beam reflected by the reflector holes in the reflector is 5 to 40 degrees.

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