KR100773749B1 - Thin film deposition method - Google Patents

Abstract

A thin film deposition method is provided to activate a reaction gas by increasing a process temperature during a reaction gas supply process and a purge process. An atom layer deposition process includes a reaction source supply process and a purge process. The reaction source supply process and the purge process are performed in at least two different process temperatures. A pre-treatment process is performed in a deposition chamber at a temperature different from the process temperature. A deposition process is performed after the pre-treatment process. After the deposition process, a rapid thermal treatment process or a densification process is performed in the chamber at a temperature different from the process temperature. The rapid thermal treatment process or the densification process is performed during the deposition process.

Description

Thin film deposition method

FIG. 1 is a diagram showing feeding by gas with time in a general ALD method, and FIG. 2 is a diagram showing a temperature change with time.

3 is a view showing the feeding by gas with time in the first embodiment of the thin film deposition method according to the present invention, Figure 4 is a view showing the (process) temperature change with time.

5 is a view showing the (process) temperature change with time in the second embodiment of the thin film deposition method according to the present invention.

6A and 6B are diagrams showing temperature (process) temperature changes with time in the third embodiment of the thin film deposition method according to the present invention.

FIG. 7 is a diagram showing feeding by gas according to time in the fourth exemplary embodiment of the thin film deposition method according to the present invention, and FIG. 8 is a diagram showing a (process) temperature change with time.

FIG. 9 is a view showing gaseous feeding over time in a fifth embodiment of the thin film deposition method according to the present invention, and FIG. 10 is a time-dependent process (in the fifth embodiment of the thin film deposition method according to the present invention). ) The figure shows the temperature change.

The present invention relates to a thin film deposition method, and more particularly, to an atomic layer deposition (ALD) method that can escape the limitations of the process temperature.

As the degree of integration of semiconductor devices increases, the characteristics of thin films and processes that are required become more difficult. In particular, a semiconductor device such as a DRAM is composed of one transistor and one capacitor. In order to improve the capacitance of the semiconductor device including the capacitor, it is important to increase the capacitance of the capacitor. In order to increase the capacitance of the capacitor, the method of dimensionalizing the lower electrode, increasing the height of the lower electrode, and reducing the thickness of the dielectric film have been used, but the limit has been reached to secure a stable high capacitance in a small area. It was. Therefore, the use of a dielectric film having a high dielectric constant is required.

Until now, most of the materials used as dielectric films for semiconductor devices are made of binary materials such as silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), and hafnium oxide (HfO ₂ ), but gradually hafnium silicon oxide (HfSiO). Hafnium silicon oxynitride (HfSiON), as well as ternary materials such as HfO ₂ / SiO ₂ lamination) and hafnium aluminum oxide (HfAlO, which may be Al ₂ O ₃ / HfO ₂ lamination) The use of quaternary materials is also increasing. In addition, a thin film of SiO ₂ family that is used as the gate oxide has been a need for control new thin film can reach to the leakage current, the limit as the size of semiconductor devices decreases, there proceeds a lot of research on high-k thin film accordingly. In addition, there is an increasing demand for thin films, such as metal processes for forming electrodes, which require excellent step-coverage.

The method used to deposit the thin film required in such a semiconductor process is generally largely dependent on the characteristics of the source. For example, the decomposition temperature of the source, such as making a limit to the process conditions and proceeding based on this limit, it is difficult to obtain a thin film of excellent properties. The decomposition temperature of the source is a very important factor, especially in the case of ALD in which the process is carried out with the surface reaction excluded from the gas phase reaction.

For example, in the ALD HfO ₂ process, the TEMAHf source for HfO ₂ deposition decomposes above 150 ° C so that the temperature of the gas line or shower head is controlled below 150 ° C. have. In addition, in view of the HfO ₂ deposition thickness according to the temperature of the stage heater, the chemical vapor deposition (CVD) reaction occurs at 300 ° C or higher, and it is inferred that the TEMAHf source is decomposed when the stage heater temperature is 300 ° C or higher. can do. Therefore, the maximum process temperature of ALD HfO ₂ is 300 ° C. However, when O ₃ is used as the reaction gas, O ₃ has excellent oxidation ability at high temperature, and thus, a higher thin film can be obtained at a higher process temperature.

This problem may be a greater problem, especially when forming ternary or more thin films may have different temperature characteristics depending on each source. For example, Ge, Sb, and Te have different source characteristics, particularly decomposition temperatures, in forming GST thin films used in phase transition memory as ALD.

However, the conventional ALD method supplies a source and a reaction gas in a state where the process temperature is kept constant by making the temperature of the stage heater constant. For example, referring to FIG. 1, which illustrates an ALD process using two typical reaction sources, an ALD process may be provided by supplying a first source (source)-> first source purge-> second source (reaction gas). 1 cycle consisting of a supply-> a second reaction source purge is repeated a number of times. In the conventional ALD process, the process temperature is determined without changing the temperature of the stage heater as the process progresses, as shown in FIG. It is kept constant at temperature. Therefore, as mentioned above, the current thin film deposition method which proceeds while maintaining the temperature of the stage heater has a problem inconsistent with the characteristics of the source.

Also, Al ₂ O ₃ thin films are generally deposited at 400 ° C. or higher, and HfO ₂ thin films are deposited at 300 ° C. as mentioned above, and Al ₂ O ₃ and HfO ₂ are laminated in one chamber to form Al. _In the case of forming a composite film of a ₂ O ₃ / HfO ₂ laminate, an excellent thin film cannot be obtained for both the Al ₂ O ₃ and HfO ₂ thin films in a system that maintains a stage heater at a constant temperature as in the prior art. Therefore, the method of forming the composite film in one chamber as described above is a good method in consideration of productivity, etc., but has a problem in that the process temperature must be the same. This different film temperature is basically caused by the difference in decomposition temperature and reactivity of the source.

The technical problem to be achieved by the present invention is to provide a thin film deposition method that can escape the limitation of the process temperature.

One aspect of the thin film deposition method according to the present invention for achieving the above technical problem is in the atomic layer deposition (ALD) method comprising the step of supplying and purging one or more reaction sources, wherein each step is two or more different It is performed at the process temperature.

Another aspect of the thin film deposition method according to the present invention for achieving the technical problem is supplying a first reaction source, purging the first reaction source, supplying a second reaction source and the second reaction A thin film deposition method comprising purging a source, comprising: supplying a first reaction source, purging the first reaction source, supplying the second reaction source, and purging the second reaction source The step is to perform at two or more different process temperatures.

Here, the step of supplying the first reaction source and the step of supplying the second reaction source may be performed at different process temperatures according to the difference in decomposition temperature and reactivity of the reaction source. And since the purge efficiency is effective at high temperature, each reaction source purge step may be performed at a higher temperature than the supply step of the reaction source.

Another aspect of the thin film deposition method according to the present invention for achieving the technical problem is supplying a first reaction source, purging the first reaction source, supplying a second reaction source, the second A thin film deposition method comprising purging a reaction source, supplying a third reaction source, and purging the third reaction source, supplying the first reaction source, purging the first reaction source To purge, supplying a second reactant source, purging the second reactant source, supplying a third reactant source and purging the third reactant source are performed at two or more different process temperatures. . That is, when three or more reactants, such as the first, second and third reactants, are used at two or more different process temperatures due to the difference in decomposition temperature and reactivity of each reactant.

In particular, supplying the first reaction source, supplying the second reaction source, and supplying the third reaction source may be performed at two or more process temperatures.

Another aspect of the thin film deposition method according to the present invention is that in the atomic layer deposition (ALD) method, the process temperature is changed in the middle of the process from the start of the thin film deposition to the end. The process temperature at the end of deposition is higher than the process temperature at the beginning of thin film deposition, or the process temperature at the end of deposition is lower than the process temperature at the beginning of thin film deposition.

Another aspect of the thin film deposition method according to the present invention is a thin film deposition method for forming two or more different types of thin films, wherein two or more different types of thin films are deposited in one chamber, but the deposition process temperature of each thin film is different. It is to change and deposit.

Here, the two or more thin films may be formed by atomic layer deposition, or at least one thin film may be formed by atomic layer deposition, and the remaining thin films may be formed by chemical vapor deposition (CVD). The method of depositing a thin film by atomic layer deposition includes supplying and purging one or more reaction sources, each of which may be performed at two or more different process temperatures.

In the methods according to the present invention, a pretreatment step may be further performed before the thin film is deposited, or after the thin film is deposited, a rapid heat treatment process or a densification treatment may be further performed, or an intermediate process of depositing the thin film may be performed. At least one rapid heat treatment step or densification may be further performed. This pretreatment, rapid heat treatment and densification are carried out at different temperatures than the process temperatures for thin film deposition.

In the methods according to the invention, the thin film deposition preferably uses a rapid thermal process apparatus.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. The embodiments described below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. In the drawings illustrating embodiments of the present invention, like numerals in the drawings refer to like elements.

First embodiment

In this embodiment, the ALD process is performed by using a rapid thermal process. That is, the ALD process is performed by varying the temperature instantaneously and varying the process temperature when supplying various reaction sources.

3 is a view showing the feeding by gas with time in the first embodiment of the thin film deposition method according to the present invention, Figure 4 is a view showing the (process) temperature change with time.

First, referring to FIG. 3, a step (t1) of supplying a source as a first reaction source to the chamber, a step (t2) of purging a source as a first reaction source, a step (t3) of supplying a reaction gas as a second reaction source, and a second 2, a step (t4) of purging the reaction gas as a reaction source is performed to deposit a thin film on the substrate. By repeating the cycle consisting of steps t1 to t4, a thin film of a desired thickness can be deposited.

Here, as shown in Figure 4, the step (t1) of supplying the source of the first reaction source (t1) is a step (t2) of purging the source of the first reaction source, the step of supplying the reaction gas of the second reaction source (t3) and The reaction gas, which is the second reaction source, is performed at a lower process temperature than the step (t4). In case of supplying a temperature-constrained source, it is carried out at a lower temperature, and at a higher temperature when supplying and purifying a reaction gas. Accordingly, the reaction gas can be sufficiently activated as compared with the conventional method of limiting the maximum temperature based on the source.

Meanwhile, in FIG. 4, the temperature is gradually changed (directly) during the step of purging the source (t2) and the step of purging the reaction gas (t4), and rapid temperature change is also possible because of the rapid heat treatment method. That is, the temperature of the step (t2) of purging the source is maintained to be substantially the same as the temperature of the step (t1) of supplying the source and then proceeds to step (t3) of supplying the reaction gas by raising the temperature instantaneously or After the step of supplying the source (t1), the temperature of the step (t2) of purging the source by raising the temperature instantaneously may be made to be substantially the same as the step (t3) of supplying the reaction gas. Similarly, the temperature of the step t4 of purging the reaction gas is maintained at about the same temperature as that of the step t3 of supplying the reaction gas, and then the temperature is momentarily lowered to supply the source of the next cycle (t1). ), Or after the step (t3) of supplying the reaction gas, the temperature of the step (t4) of purging the reaction gas by temporarily lowering the temperature is almost the same as the step (t1) of supplying the source of the next cycle. It may be.

This embodiment can be applied, for example, when depositing an HfO ₂ thin film with ALD. When TEMAHf is used as the Hf source and O ₃ is used as the O reaction gas, TEMAHf is decomposed at 150 ° C. or higher. Thus, CVD reaction occurs at a high temperature of 300 ° C. or higher, thereby degrading thin film properties. However, in case of O ₃ , the oxidizing power increases at high temperature, thereby increasing the reactivity by O ₃ . Therefore, the most effective method is to apply the embodiment of the present invention to supply TEMAHf at low temperature and, conversely, O ₃ at high temperature to advance the ALD process.

Rapid heat treatment is a process that proceeds while changing the temperature in a short time, it can change a few hundred ℃ within a short time within 10 seconds. The present invention proceeds the ALD process by applying a rapid heat treatment method capable of such an instantaneous temperature change. At this time, the temperature must be changed quickly and reproducibility must be ensured.

On the other hand, after the thin film is formed using the above method, the rapid heat treatment process or densification treatment may be further performed at different temperatures continuously. Of course, this rapid heat treatment and densification can proceed at least once in the middle of the process.

The concept of proceeding the process by changing the process temperature as in the present invention may be applied to a general plasma ALD, a remote plasma method or a direct plasma method may be applied. In the case of the direct plasma method, the chamber type may be a lamp heating under the substrate.

In addition, in the present embodiment, a thin film is deposited using a source as a first reaction source and a reaction gas as a second reaction source. However, the thin film is deposited even if two or more different sources or three or more reaction sources are used. Note that you can. If so, the first source feed-> the first source purge-> the second source feed-> the second source purge cycle is soon followed by the first source feed-> the first source purge-> the second source feed-> A cycle of the second source purge is obtained. The use of two or more sources as the first reaction source and the reaction gas as the second reaction source will be described later.

Second embodiment

In this embodiment, an example of adding a pretreatment process to an ALD process will be described. Here, the ALD process described above is used as it is described in the first embodiment.

5 is a view showing a (process) temperature change with time in the second embodiment of the present invention.

First, the pretreatment step (s) is performed. This pretreatment step (s) may be a nitriding treatment by rapid heat treatment with a nitrogen-based gas such as NH ₃ or N ₂ or out gassing to remove impurities. In addition, as indicated by the solid line, the pretreatment step (s) may be higher than the ALD process temperature or may be lower as indicated by the dotted line.

For example, in the case of depositing an oxide film such as a gate oxide film or a dielectric film or in silicon epitaxial growth, impurity control is very important. If the chamber pressure is lowered and the process temperature is made high, the impurities are volatilized and removed. This is out gassing. On the other hand, a part of the surface of the oxide film is made into a nitride film or a dangling bond is removed for the purpose of improving leakage current characteristics and the like of the already deposited oxide film.

After performing the pretreatment step (s), the ALD process is performed while changing the process temperature for the source and the reaction gas in the same manner as described in the first embodiment.

Since the temperature of the pretreatment step is different from the process temperature of the thin film deposition, it has been difficult to continuously perform the pretreatment and the thin film deposition in one chamber. This may be due to the long time required to adjust the temperature between pretreatment and thin film deposition. However, in the case of the present invention, since the rapid heat treatment method is used, the pretreatment step (s) and the subsequent ALD process can be continuously performed in one chamber, and the ALD process can also be performed by changing the process temperature for the source and the reaction gas. There is a number.

Third embodiment

6A and 6B are diagrams showing temperature (process) temperature changes with time in the third embodiment of the thin film deposition method according to the present invention. In the thin film deposition method according to the present embodiment, as shown in FIGS. 6A and 6B, the process temperature is changed from the start to the end of thin film deposition.

For example, the process proceeds by gradually increasing the process temperature from the start of the process as indicated by the solid line in FIG. 6A, or gradually decreases the process temperature from the start of the process as indicated by the dotted line. You can proceed. In addition, as indicated by the solid line in FIG. 6B, the temperature may be stepped up later than the temperature at the start of the process, or the temperature may be lowered stepwise than the temperature at the start of the process as indicated by the dotted line. You may proceed.

According to the present invention, a case of gradually increasing the process temperature or proceeding by increasing the temperature stepwise is as follows. Proceeds at low temperature early in the process to obtain a thin film having excellent step coverage. Then, proceeding at high temperature may increase the deposition rate and increase productivity.

According to the present invention, a case of gradually progressing while lowering the process temperature or proceeding by lowering the temperature stepwise is as follows. Initially, it proceeds at high temperature to obtain a thin film having a good barrier role or excellent adhesion. Then proceed at lower temperatures to reduce the thermal budget of the thin film.

Thus, according to the present invention is characterized by being able to proceed separately to the desired process. On the other hand, after forming a thin film using the said method, a rapid heat processing process, a densification treatment, etc. can be further advanced at another temperature continuously. Of course, this rapid heat treatment or densification can proceed in the middle of the process. These different process temperatures can be used in rapid heat treatment or densification as well as thin film deposition processes.

Fourth embodiment

According to the present invention, even when a thin film is formed by repeatedly depositing three or more kinds of thin films such as TiAlN or GST thin films, that is, two or more different sources alternately, the temperature can be changed according to the characteristics of the source.

In the case of a ternary thin film, as the number of sources increases, the probability of generating a difference between the sources increases. In particular, in the case of a thin film such as GST, Ge has a high volatility and easily volatilizes. In the case of Te, it is necessary to maintain a high temperature. Thus, when the process is performed at different temperatures, the problem due to the difference between the sources can be solved.

Hereinafter, a case of forming a TiAlN thin film will be described as an example, but a GST thin film can be formed by applying the same method.

In the case of TiAlN, TiCl ₄ and TMA are used as metal sources, and NH ₃ may be used as a reaction gas. (Ie, when the first source is used as the first reaction source, the second source is used as the second reaction source, and the reaction gas is used as the third reaction source.) FIG. 7 is a view illustrating a thin film deposition method according to the present invention. FIG. 4 is a diagram illustrating feeding by gas according to time in FIG. 4, and FIG. 8 is a diagram illustrating a change in temperature (process) with time.

Referring to FIG. 7, the TiCl ₄ supply line is turned on to supply TiCl ₄ and then off (t1). Then, the NH ₃ supply line is turned on to supply NH ₃ and then off (t3). The TMA supply line is turned on to supply the TMA and then off (t5). Then, the NH ₃ supply line is turned on to supply NH ₃ and then off (t7). A purge proceeds between each of these raw material supply steps t1, t3, t5, t7, that is, during t2, t4, t6, t8. In this way, one cycle consisting of t1 to t8 is repeated several times to deposit a TiAlN thin film.

At this time, TiCl ₄ and TMA have different characteristics, so the optimum process temperature should be performed at different temperatures for each source characteristic. Therefore, it is preferable that the process proceeds with different temperatures when the sources and the reactant gas are supplied.

For example, as shown in FIG. 8, the TiCl ₄ supply step (t1) proceeds at the TiCl ₄ optimum decomposition temperature, and the TiCl ₄ purge (t2) step and the NH ₃ supply step (t3) raise the temperature. Proceed. Then, the temperature is lowered during the NH ₃ purge step t4 so that the TMA feed step t5 proceeds at the TMA optimum decomposition temperature, and the TMA purge step t6 and NH ₃ feed step t7 raise the temperature. do. The temperature is then lowered during the NH ₃ purge step t8 to allow the next TiCl ₄ feed step t1 to proceed at the TiCl ₄ optimal decomposition temperature. In this way, the temperature is different when the sources and the reactant gas are supplied to proceed the process.

As another example, an HfSiON thin film which is a quaternary thin film is formed. There are various methods of forming an HfSiON thin film. In the present invention, an HfSiON forming method of forming an HfSiOx thin film by an ALD method and then forming a continuous HfSiOx film by a rapid heat treatment method will be described.

TEMAHf and TEMASi can be used as the Hf and Si sources, co-injection of each source at the same time, purging for a certain time, supplying O ₃ (ozone) as the O reactant gas and O reactant gas. The purge step forms HfSiOx. HfSiOx having a predetermined thickness is formed by repeating the above steps according to the typical ALD method. In this case, as described above, the process temperature may be different for each process step. After depositing the HfSiOx thin film, a rapid heat treatment process is performed while supplying NH ₃ to finally form HfSiON. In this case, unlike the HfSiOx deposition temperature previously proceeded, it can proceed while maintaining a different process temperature during the rapid heat treatment time.

As another example, the HfO ₂ thin film may be formed and subsequently subjected to nitriding treatment using rapid heat treatment using NH ₃ . This is another feature that the thin film deposited by the ALD method can be improved by the rapid heat treatment method such as Rapid Thermal Annealing (RTA) or Rapid Thermal Nitridation (RTN).

Meanwhile, although the TiAlN thin film and the HfSiON thin film have been described as an example in the present embodiment, a rapid heat treatment process or a densification process, in addition to depositing another ternary thin film or a ternary thin film or more component thin films by different types of sources, is performed. It will be appreciated that it can also be used to proceed.

The first to fourth embodiments described above cause a temperature change in one process aspect. In summary, irrespective of thin films such as binary or ternary (or quaternary) thin films, the process proceeds at different temperatures according to process steps depending on each source or reaction gas. In addition, regardless of a thin film such as a binary or ternary (or quaternary) thin film, the process proceeds by differentiating the initial temperature and the later temperature. In addition, a thin film is formed by using the above-described method, and the rapid heat treatment process or densification treatment is continuously performed at different temperatures, and the rapid heat treatment or densification can be performed even in the middle of the process.

In the following description, the process proceeds at different temperatures for each step of the process proceeding during the formation of each thin film in successively proceeding with two or more thin films or forming the laminated thin film by repeating the two thin films. do.

Fifth Embodiment

If the present invention is applied, it can be applied to the case of forming a composite film using two or more kinds of thin films. In particular, it can be effectively applied to a composite film formed by alternating two or more kinds of thin films. In this embodiment, an example in which a composite film is formed by alternately advancing an Al ₂ O ₃ / HfO ₂ thin film is given.

FIG. 9 is a diagram showing feeding by gas according to time in the fifth embodiment of the thin film deposition method according to the present invention, and FIG. 10 is a diagram showing a (process) temperature change with time.

9 and 10, an Al source, which is a first source, is supplied to the chamber at a first temperature (s1), and then the Al source is purged while raising the temperature (s2). Then, at a second temperature higher than the first temperature, a reaction gas, for example, an O source is supplied (s3) to form a thin Al ₂ O ₃ film. Then, purge the reaction gas (s4) while lowering the temperature. In this way, the subcycle a consisting of steps s1 to s4 is repeated several times to form an Al ₂ O ₃ film having a desired thickness.

Next, the Hf source, which is the second source, is supplied to the chamber at a third temperature lower than the first temperature (s5), and then the Hf source is purged while raising the temperature (s6). Then, at a fourth temperature higher than the third temperature, a reaction gas, such as an O source, is supplied (s7) to form a thin HfO ₂ film. Then, purge the reaction gas (s8) while lowering the temperature. In this way, the subcycle b consisting of the steps s5 to s8 is repeated several times to form an HfO ₂ film having a desired thickness.

When the sub cycles a and b are alternately performed as described above, an Al ₂ O ₃ / HfO ₂ laminate structure having a desired thickness can be formed. As such, when looking into each of the Al ₂ O ₃ deposition processes (steps s1 to s4) and the HfO ₂ deposition processes (steps s5 to s8), the source is supplied at a low temperature when supplying a temperature-limited source. The reaction gas is supplied and purged at a higher temperature. The Al ₂ O ₃ film is deposited at a high temperature, and the HfO ₂ film is deposited at a lower temperature.

According to the present invention, the ALD process is performed in accordance with the characteristics of the source by using a rapid heat treatment method capable of instantaneous temperature change, so that two or more sources are used, and even if the decomposition temperature of the source is different, one process module (PM ) Has the advantage to proceed.

Meanwhile, in the present embodiment, the Al ₂ O ₃ / HfO ₂ thin films are alternately formed to form a composite film, and each thin film is formed by atomic layer deposition. For example, at least two thin films are alternately deposited. One thin film may be formed by atomic layer deposition and the other thin film may be formed by chemical vapor deposition.

Although the detailed description of the present invention has been made, it will be apparent to those skilled in the art that various modifications may be made without departing from the scope of the present invention. The invention is only defined by the scope of the claims.

According to the present invention, the process temperature is changed during the process.

Therefore, an excellent thin film can be formed even if the process temperature is limited due to the characteristics of the source. In particular, even when a thin film having elements of three or more elements is formed, the process can be performed according to the characteristics of the source. In addition, when two or more thin films are used, such as when a composite film of Al ₂ O ₃ / HfO _{2 is} formed by stacking Al ₂ O ₃ and HfO ₂ , even if the deposition temperature of each thin film is different, It is possible to proceed in the process module PM.

In addition, when supplying a source that must be low temperature proceeds by lowering the process temperature, and in a step such as supplying and purging the reaction gas proceeds to increase the process temperature to sufficiently activate the reaction gas compared to the conventional limit to the maximum temperature based on the source Can be.

Claims (15)

In the atomic layer deposition (ALD) method of depositing a thin film comprising supplying and purging at least one reaction source, Each said step is carried out at two or more different process temperatures, Prior to depositing the thin film, the pretreatment step is further performed at a temperature different from the process temperature in the chamber in which the thin film is deposited, and the thin film is continuously deposited in the pretreatment step, or after the thin film is deposited in the chamber. A rapid heat treatment process or a densification process is further performed at a temperature different from the process temperature continuously in the process, or a rapid heat treatment process at a temperature different from the process temperature at least once in the chamber during the deposition of the thin film. Or further densifying the thin film deposition method. A thin film deposition method for depositing a thin film comprising supplying a first reaction source, purging the first reaction source, supplying a second reaction source, and purging the second reaction source, Supplying the first reactant, purging the first reactant, supplying the second reactant and purging the second reactant are performed at two or more different process temperatures, Prior to depositing the thin film, the pretreatment step is further performed at a temperature different from the process temperature in the chamber in which the thin film is deposited, and the thin film is continuously deposited in the pretreatment step, or after the thin film is deposited in the chamber. A rapid heat treatment process or a densification process is further performed at a temperature different from the process temperature continuously in the process, or a rapid heat treatment process at a temperature different from the process temperature at least once in the chamber during the deposition of the thin film. Or further densifying the thin film deposition method. The method of claim 2, Supplying a third reaction source and purging the third reaction source, Supplying the first reaction source, purging the first reaction source, supplying a second reaction source, purging the second reaction source, supplying the third reaction source and the Purging the third reaction source is performed at two or more different process temperatures. delete In atomic layer deposition (ALD) method, Gradually or stepwise increase the process temperature at the end of deposition than the process temperature at the beginning of thin film deposition, or gradually or stepwise lower the process temperature at the end of deposition than the process temperature at the beginning of thin film deposition, Thin film deposition method characterized in that the process temperature change in the middle of the process from the start to finish the thin film deposition. The method of claim 5, comprising supplying and purging at least two reaction sources for the thin film deposition. In the thin film deposition method of forming a composite film by stacking two or more different types of thin films, The first thin film is deposited by repeating a cycle including supplying a first reaction source, purging the first reaction source, supplying a second reaction source, and purging the second reaction source. But Supplying the first reactant, purging the first reactant, supplying the second reactant and purging the second reactant are performed at two or more different process temperatures, And depositing a second thin film different from the first thin film on the first thin film. The method of claim 7, wherein The second thin film deposition may include supplying a first reaction source for depositing the second thin film, purging the first reaction source for depositing the second thin film, and supplying a second reaction source for depositing the second thin film. Depositing a second thin film by repeating a sub cycle including supplying and purging a second reaction source for depositing the second thin film, Supplying a first reaction source for the second thin film deposition, purging the first reaction source for the second thin film deposition, supplying a second reaction source for the second thin film deposition and the second 2 Purging the second reaction source for thin film deposition is carried out at two or more different process temperatures. 8. The method of claim 7, wherein the second thin film is formed by a chemical vapor deposition (CVD) method. delete 10. The method according to any one of claims 5 to 9, further comprising performing a pretreatment step at a temperature different from the process temperature in the chamber in which the thin film is deposited before depositing the thin film and continuing the pretreatment step. A thin film deposition method comprising depositing a thin film. The method according to any one of claims 5 to 9, wherein after the deposition of the thin film, a rapid heat treatment process or a densification treatment is continuously performed at a temperature different from the process temperature in the chamber in which the thin film is deposited. Thin film deposition method characterized by further proceeding. 10. The method according to any one of claims 5 to 9, wherein the rapid heat treatment process or densification treatment is further performed at a temperature different from the process temperature at least once in the chamber in which the thin film is deposited in the middle of depositing the thin film. Thin film deposition method characterized in that. The thin film deposition method of claim 12, wherein the thin film deposition is performed using a rapid thermal process apparatus. The method of claim 13, wherein the thin film deposition is performed using a rapid heat treatment apparatus.

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