KR100757659B1 - Package of image sensor - Google Patents

Package of image sensor Download PDF

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Publication number
KR100757659B1
KR100757659B1 KR1020010068952A KR20010068952A KR100757659B1 KR 100757659 B1 KR100757659 B1 KR 100757659B1 KR 1020010068952 A KR1020010068952 A KR 1020010068952A KR 20010068952 A KR20010068952 A KR 20010068952A KR 100757659 B1 KR100757659 B1 KR 100757659B1
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South Korea
Prior art keywords
image sensor
package
chip
present
glass layer
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KR1020010068952A
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Korean (ko)
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KR20030037862A (en
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임부택
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매그나칩 반도체 유한회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Abstract

본 발명은 이미지 센서의 패키지 내에 존재하는 공간으로 인한 칩의 패일 발생을 방지함과 동시에 이미지 센서의 TC 및 TH 특성저하를 방지할 수 있는 이미지 센서의 패키지를 제공한다. 본 발명에 따른 이미지 센서의 패키지는 패키지 몸체; 패키지 몸체의 내부 중간부에 형성된 캐비티에 부착된 이미지 센서의 칩; 칩과 상기 몸체를 전기적으로 접속하는 금속 와이어; 및 몸체의 상부에 부착된 글래스층을 포함하고, 글래스층과 몸체 사이의 공간이 투과도가 우수한 물질막으로 채워져 있는 것을 특징으로 한다.
The present invention provides a package of an image sensor that can prevent chip failure due to the space present in the package of the image sensor and at the same time prevent TC and TH deterioration of the image sensor. The package of the image sensor according to the present invention comprises a package body; A chip of the image sensor attached to the cavity formed in the inner middle portion of the package body; A metal wire electrically connecting the chip and the body; And a glass layer attached to the upper portion of the body, wherein the space between the glass layer and the body is filled with a material film having excellent permeability.

이미지 센서, 패키지, 글래스층, 마이크로 렌즈Image Sensors, Packages, Glass Layers, Micro Lenses

Description

이미지 센서의 패키지{PACKAGE OF IMAGE SENSOR} Package of Image Sensors {PACKAGE OF IMAGE SENSOR}             

도 1a 및 도 1b는 종래의 이미지 센서의 평면도 및 단면도.1A and 1B are a plan view and a cross-sectional view of a conventional image sensor.

도 2는 본 발명의 실시예에 따른 이미지 센서의 단면도.
2 is a cross-sectional view of an image sensor according to an embodiment of the present invention.

※ 도면의 주요부분에 대한 부호의 설명※ Explanation of code for main part of drawing

20 : CLCC 패키지 몸체20: CLCC package body

21 : 칩21: Chip

22 : 와이어22: wire

23 : 광투과 물질막23: light transmitting material film

24 : 글래스층
24: glass layer

본 발명은 이미지 센서 기술에 관한 것으로, 특히 칩의 패일 발생을 방지함과 동시에 이미지 센서의 TC 및 TH 특성저하를 방지할 수 있는 이미지 센서의 패키 지에 관한 것이다.The present invention relates to an image sensor technology, and more particularly, to a package of an image sensor that can prevent chip failure and at the same time prevent TC and TH characteristics of the image sensor from deteriorating.

이미지 센서는 빛을 감지하는 광감지 부분과 감지된 빛을 전기적 신호로 처리하여 데이터화하는 로직회로 부분으로 구성되어 있으며, 광감도를 높이기 위하여 광감지 부분 이외의 영역으로 입사하는 빛의 경로를 변경하여 광감지 부분으로 모아주는 집광기술로서 마이크로 렌즈 형성 기술을 적용하고 있다. The image sensor consists of a light sensing part that senses light and a logic circuit part that processes the sensed light into an electrical signal to make data, and changes the path of light incident to areas other than the light sensing part in order to increase the light sensitivity. Micro-lens forming technology is applied as a condensing technology to collect as a sensing part.

도 1a 및 도 1b는 종래의 이미지 센서의 패키지를 나타낸 평면도 및 단면도로서, 도 1b는 도 1a의 A-A' 선에 따른 단면도이다.1A and 1B are plan and cross-sectional views illustrating a package of a conventional image sensor, and FIG. 1B is a cross-sectional view taken along line AA ′ of FIG. 1A.

도 1b를 참조하면, 종래의 이미지 센서의 패키지는, CLCC(Ceramic Leadless Chip Carrier) 패키지 몸체(10)의 내부 중간부에 형성된 캐비티에 이미지 센서의 칩(11)이 부착되어 있고, 이 칩(11)은 금속 와이어(12)에 의해 몸체(10)의 내부에 형성된 패턴금속(미도시)과 전기적으로 접속되어 있으며, 몸체(10)의 상부에는 접착제(100; 도 1a 참조)의 개재하에 칩(11)으로 빛이 투과할 수 있도록 글래스층(13)이 부착되어 있는 구조로 되어 있다.Referring to FIG. 1B, a conventional image sensor package includes a chip 11 of an image sensor attached to a cavity formed in an inner middle portion of a CLCC (Ceramic Leadless Chip Carrier) package body 10. ) Is electrically connected to a pattern metal (not shown) formed inside the body 10 by the metal wire 12, and a chip (not shown) on the upper portion of the body 10 under an adhesive 100 (see FIG. 1A). 11) has a structure in which a glass layer 13 is attached to allow light to pass through.

그러나, 상술한 종래의 이미지 센서의 패키지에 있어서는, 몸체(10)와 글래스층(13)을 단순히 접착제(100)의 개재하에 서로 접착시켜 놓았기 때문에, 몸체(10)와 글래스층(13) 사이에 공기가 존재하는 공간(200)이 존재함으로써, 패키지 후 이 공간(200)에 파티클(particle)이 발생되는 경우 칩(11)의 패일이 유발된다. 즉, 이미지 센서는 칩의 최상부에 패시배이션막이 형성되는 일반적인 반도체 칩과는 달리 칩의 최상부에 마이크로 렌즈(미도시) 및 LTO(low temperature oxide; 미도시)층이 형성되어 있기 때문에, 파티클이 칩(11)의 마이크로 렌즈 상에 떨어지 는 경우 마이크로 렌즈를 통과할 빛이 산란되거나 차단되어 광감지영역에 도달하는 빛이 감소됨으로써 굳 다이가 패키지 후 패일 다이로 되는 문제가 있었다. However, in the package of the conventional image sensor described above, since the body 10 and the glass layer 13 are simply adhered to each other under the interposition of the adhesive 100, between the body 10 and the glass layer 13 The presence of air in the space 200 causes the chip 11 to fail when particles are generated in the space 200 after the package. That is, unlike an ordinary semiconductor chip in which a passivation film is formed on the top of the chip, the image sensor has a microlens (not shown) and a low temperature oxide (LTO) layer formed on the top of the chip. When falling on the microlens of the chip 11, the light passing through the microlens is scattered or blocked, so that the light reaching the light sensing region is reduced, so that the hard die is a package die after the package.

또한, 몸체(10)와 글래스층(13) 사이의 공간에 존재하는 공기에 포함된 수분으로 인하여 이미지 센서의 TC(Thermal Cycle) 및 TH(Thermal Humidity) 특성 저하가 발생되며, 이를 방지하기 위해서는 별도의 TC 및 TH 테스트 스펙(spec)을 두어야 하는 번거로움이 있었다.In addition, due to moisture contained in the air present in the space between the body 10 and the glass layer 13, TC (Thermal Cycle) and TH (Thermal Humidity) characteristics of the image sensor are deteriorated. The hassle of having to put the TC and TH test specs for

또한, 도 1a에 도시된 바와 같이, 글래스층(13)과 몸체(10)를 접착하는 접착제(100) 내에 보이드(void)가 발생되면, 칩(11) 내부로 공기나 습기가 유입되어 칩의 패일이 유발되며, 이러한 패일이 유발되지 않더라도 패키지 후 접착제의 박리로 인하여 결국 패키지의 신뢰성을 저하시킨다.
In addition, as shown in FIG. 1A, when voids are generated in the adhesive 100 adhering the glass layer 13 and the body 10, air or moisture may be introduced into the chip 11 so that Fails are induced, and even if such a fail is not caused, the peeling off of the adhesive after the package eventually lowers the reliability of the package.

본 발명은 상기와 같은 종래의 문제점을 해결하기 위한 것으로서, 이미지 센서의 패키지내에 존재하는 공간으로 인한 칩의 패일 발생을 방지함과 동시에 이미지 센서의 TC 및 TH 특성저하를 방지할 수 있는 이미지 센서의 패키지를 제공함에 그 목적이 있다.
Disclosure of Invention The present invention is to solve the conventional problems as described above, and to prevent chip failure due to the space present in the package of the image sensor, and at the same time to prevent deterioration of TC and TH characteristics of the image sensor. The purpose is to provide a package.

상기 본 발명의 목적을 달성하기 위하여, 본 발명에 따른 이미지 센서의 패키지는 패키지 몸체; 패키지 몸체의 내부 중간부에 형성된 캐비티에 부착된 이미지 센서의 칩; 칩과 상기 몸체를 전기적으로 접속하는 금속 와이어; 및 몸체의 상부에 부착된 글래스층을 포함하고, 글래스층과 몸체 사이의 공간이 광투과 물질막으로 채워져 있는 것을 특징으로 한다.In order to achieve the object of the present invention, a package of an image sensor according to the present invention comprises a package body; A chip of the image sensor attached to the cavity formed in the inner middle portion of the package body; A metal wire electrically connecting the chip and the body; And a glass layer attached to the upper portion of the body, wherein the space between the glass layer and the body is filled with a light transmitting material film.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

도 3은 본 발명의 실시예에 따른 이미지 센서의 패키지를 나타낸 단면도이다.3 is a cross-sectional view illustrating a package of an image sensor according to an exemplary embodiment of the present invention.

도 3에 도시된 바와 같이, 본 발명의 이미지 센서의 패키지는, CLCC 패키지 몸체(20)의 내부 중간부에 형성된 캐비티에 이미지 센서의 칩(21)이 부착되어 있고, 이 칩(21)은 금속 와이어(22)에 의해 몸체(20)의 내부에 형성된 패턴금속(미도시)과 전기적으로 접속되어 있다. 또한, 몸체(20A)의 상부에는 접착제(100; 도 1a 참조)의 개재하에 칩(21)으로 빛이 투과할 수 있도록 글래스층(24)이 부착되어 있고, 글래스층(24)과 몸체(20A) 사이의 공간(200; 도 1b 참조)에는 광투과 물질막(23)이 채워져 있다. 광투과 물질막은 투과도가 우수한 물질을 사용하는 것이 바람직하다.As shown in FIG. 3, in the package of the image sensor of the present invention, the chip 21 of the image sensor is attached to a cavity formed in the inner middle portion of the CLCC package body 20, and the chip 21 is made of metal. The wire 22 is electrically connected to a pattern metal (not shown) formed inside the body 20. In addition, the glass layer 24 is attached to the upper portion of the body 20A to allow light to pass through the chip 21 through the adhesive 100 (see FIG. 1A), and the glass layer 24 and the body 20A. The light transmission material film 23 is filled in the space 200 between the () (see FIG. 1B). As the light transmitting material film, it is preferable to use a material having excellent transmittance.

즉, 상술한 실시예에서는 글래스층(24)과 몸체(20A) 사이의 공간이 광투과 물질막(23)으로 채워짐에 따라, 공간 내의 공기존재가 방지됨과 동시에 외부로부터의 공기 및 습기 유입이 방지된다.That is, in the above-described embodiment, as the space between the glass layer 24 and the body 20A is filled with the light-transmitting material film 23, the presence of air in the space is prevented and the inflow of air and moisture from the outside is prevented. do.

이에 따라, 공간 내의 파티클 발생이 방지되어 마이크로 렌즈에서의 빛이 산란이나 차단으로 인한 광감지영역에 도달하는 빛의 감소가 방지됨으로써 칩의 패일이 방지된다. 또한, 공기 및 수분 유입이 방지됨으로써 이미지 센서의 TC 및 TH 특성이 향상될 뿐만 아니라, 접착제에 문제가 발생되더라도 이미지 센서의 특성에 영향을 미치지 않게 된다.Accordingly, generation of particles in the space is prevented, and thus the reduction of light reaching the light sensing region due to scattering or blocking of the microlenses is prevented, thereby preventing the chip from failing. In addition, by preventing the inflow of air and moisture, not only the TC and TH characteristics of the image sensor are improved, but also a problem in the adhesive does not affect the characteristics of the image sensor.

본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 요지를 벗어나지 않는 범위내에서 다양하게 변형시켜 실시할 수 있다.
The present invention is not limited to the above embodiments, and various modifications can be made without departing from the technical spirit of the present invention.

이상에서 설명한 바와 같이, 본 발명에 의하면, 이미지 센서의 패키지내에 존재하는 공간을 투과도가 우수한 물질로 채움으로써 칩의 패일 발생 및 이미지 센서의 TC 및 TH 특성저하를 방지하는 효과를 얻을 수 있다.
As described above, according to the present invention, by filling the space present in the package of the image sensor with a material having excellent transmittance, it is possible to obtain an effect of preventing chip failure and deterioration of TC and TH characteristics of the image sensor.

Claims (2)

패키지 몸체; Package body; 상기 패키지 몸체의 내부 중간부에 형성된 캐비티에 부착된 이미지 센서의 칩; A chip of the image sensor attached to the cavity formed in the inner middle portion of the package body; 상기 칩과 상기 몸체를 전기적으로 접속하는 금속 와이어; 및A metal wire electrically connecting the chip and the body; And 상기 몸체의 상부에 부착된 글래스층을 포함하는 이미지 센서의 패키지로서, A package of an image sensor including a glass layer attached to an upper portion of the body, 상기 글래스층과 상기 몸체 사이의 공간이 광투과 물질막으로 채워져 있는 것을 특징으로 하는 이미지 센서의 패키지.And a space between the glass layer and the body is filled with a light transmissive material film. 삭제delete
KR1020010068952A 2001-11-06 2001-11-06 Package of image sensor KR100757659B1 (en)

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JPH08236736A (en) * 1995-02-28 1996-09-13 Nippon Chemicon Corp Sealing structure of ccd module
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KR940010290A (en) * 1992-10-16 1994-05-24 문정환 Solid state image pickup device package and manufacturing method thereof
JPH08236736A (en) * 1995-02-28 1996-09-13 Nippon Chemicon Corp Sealing structure of ccd module
JP2000230856A (en) * 1998-12-09 2000-08-22 Fuji Electric Co Ltd Semiconductor optical sensor device
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