KR100746375B1 - Gas inlet line and silicon single crystal growing apparatus - Google Patents

Abstract

The present invention relates to a single crystal growth apparatus having a gas inflow line structure capable of preventing the generation of vortices of the gas introduced into the growth furnace and the flow of the gas rising from the bottom, that is, the upward flow.

The present invention includes a lower chamber in which a silicon melt is disposed, an upper chamber in which ingots growing from the silicon melt are pulled up, and an intermediate chamber connected between the upper and lower chambers, the gas inlet line supplying gas to the lower chamber. The direction of the inlet is configured to be perpendicular to the ground. According to this configuration, it is possible to prevent the generation of the vortex of the gas introduced into the growth furnace and the rising flow from the bottom, it is possible to prevent the oxide contamination inside the growth furnace and to reduce the crystal yield.

Barrier, Inlet, Gas Inlet Line, Oxide Deposition, Vertical

Description

GAS INLET LINE AND SILICON SINGLE CRYSTAL GROWING APPARATUS}

1 is a schematic diagram schematically showing the configuration of a silicon single crystal growth apparatus according to an embodiment of the present invention;

Figure 2 is a schematic diagram showing the installation state in the intermediate chamber of the blocking member according to an embodiment of the present invention,

3A and 3B are rear views of a blocking member provided with a gas inflow line structure according to an embodiment of the present invention, respectively;

4 is a gas flow state diagram of a portion A of FIG.

The present invention relates to a single crystal growth apparatus for growing a silicon single crystal from a silicon melt by the Chocoralski method. More particularly, the present invention relates to a single crystal growth apparatus having a gas inflow line structure capable of preventing the generation of vortices of the gas introduced into the growth furnace and the flow of the gas rising from the lower portion, that is, the upward flow.

The Chokoralsky method is generally performed by immersing the seed crystals in the molten silicon melt in the quartz crucible of the single crystal growth apparatus and pulling the seed crystals immersed in the melt upward while rotating the quartz crucible and the seed crystals in opposite directions. It is a method of growing the silicon single crystal of the columnar phase.

In order to improve the yield of the silicon single crystal, various gases such as argon or nitrogen are injected into the growth furnace of the silicon single crystal ingot from the upper part of the growth furnace and discharged to the lower part of the growth furnace while controlling impurities in the growth furnace and adjusting the oxygen concentration. Has come.

In addition, a "section process" has been used in which the single crystal growth apparatus is separated into an upper and lower chamber, and in the lower chamber, the upper chamber is opened and separated while maintaining the silicon melt at a high temperature to perform a necessary purpose.

However, in the section process, a gas inlet line between the upper chamber and the lower chamber is used to supply gas to the lower chamber without using the upper opening of the upper chamber. The gas inlet line above the lower chamber uses a single pipe arranged horizontally with respect to the ground due to the structure of the single crystal growth apparatus.

Thus, when gas enters the lower chamber, the incoming gas has a motion component that is nearly horizontal to the ground, so that an upward flow that rises above the growth path is formed near the wall of the lower chamber near the gas inlet line.

This upward flow raises the oxide of the growth furnace, deposits it at the low temperature portion of the growth furnace, and causes the problem of lowering the oxygen concentration of the single crystal because it evaporates oxygen from the melt.

In addition, the deposited oxide fell into the melt during the crystal growth process, causing the yield of crystals to deteriorate.

 The technical problem to be achieved by the present invention is to provide a single crystal growth apparatus having a gas inflow line structure for preventing the generation of vortex of the gas introduced into the growth furnace and the upward flow rising from the bottom.

In addition, the technical problem to be achieved by the present invention is to provide a single crystal growth apparatus that prevents the oxide contamination inside the furnace due to the upward flow and minimizes the decrease in crystal yield.

In addition, to provide a single crystal growth apparatus having a gas inlet line structure applicable to the section process.

In order to solve this problem, a single crystal growth apparatus using the Czochralski method according to an embodiment of the present invention includes a lower chamber in which a silicon melt is disposed, an upper chamber in which an ingot growing from the silicon melt is pulled up, and the upper and lower chambers. It comprises an intermediate chamber for connecting, the direction of the inlet of the gas inlet line for supplying gas to the lower chamber is configured to be formed perpendicular to the ground.

The gas inlet line may be in communication with a blocking member for opening and closing the lower chamber disposed between the lower chamber and the intermediate chamber.

The gas inlet line may extend below the blocking member, and the gas inlet line may have a plurality of inlets.

In this case, the inlet may be opened and closed by opening and closing the blocking member.

The gas inlet line may be uniformly arranged radially about the concentric axis.

The gas inflow line may be arranged at regular intervals along the circumferential direction of the blocking member.

The gas inflow line may be formed to form a cross pattern from the center of the blocking member.

According to another aspect of the present invention, a gas inlet line includes an elongated end connected to a gas supply device and another end connected to an inside of a crystal growth path, the other end being configured in a tongue shape and having a plurality on a lower surface of the tongue. Inlets are formed.

The tongue may be formed like a net, the gas inlet line may be extended to form a circular pattern at regular intervals, or may be formed in a cross pattern.

A plurality of inlets may be arranged at regular intervals on the tongue, and the plurality of inlets may have the smallest diameter at the lowermost end thereof, so that the flow density of the gas may be constant.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram illustrating a single crystal growth apparatus according to an embodiment of the present invention. Figure 2 is a schematic diagram showing the installation state in the intermediate chamber of the blocking member according to an embodiment of the present invention. 3A and 3B are rear views of the blocking members disposed on the lower surface of the gas inflow line according to the modification of the present invention, respectively.

Referring to FIG. 1, the single crystal growth apparatus 100 according to an exemplary embodiment of the present invention includes an upper chamber 3 and a lower chamber 2 so as to perform a sectioning process. The lower chamber 2 is connected by the intermediate chamber 1.

The lower chamber 2 has a crucible 7 made of quartz and made of graphite on the outside in order to hold the silicon melt 10 therein, and a heater 6 for heating and melting silicon in the crucible 7. And a heat insulating material 5 for protecting radiant heat from the heater 6 so as not to directly contact the inner wall of the lower chamber 2.

In the upper chamber 3, a wire 9 for pulling up a single crystal is unwound from a wire winding mechanism (not shown) attached above the upper chamber 3, and a tip for attaching a seed crystal to the tip thereof. The holder 13 is hanging.

Further, below the lower chamber 2, there is a crucible shaft 14 for supporting the crucible 7, and the crucible shaft 14 is connected to a crucible moving mechanism (not shown) connected to the crucible shaft 14. It can move up and down and can also rotate. Meanwhile, a gas exhaust line 12 is attached to the lower chamber 2 to discharge impurities or contaminants out of the lower chamber 2, and each of the gas exhaust lines 12 includes a throw valve 4c. There is a flow pressure regulator. Therefore, the gas flow rate and pressure in the lower chamber 2 can be adjusted to a desired value.

Meanwhile, the intermediate chamber 1 connecting the upper and lower chambers communicates with the upper chamber 3 to the gas inflow line 11 for supplying various gases, and the gas inflow line 11 also. Like the exhaust line 12, the pressure is regulated by a flow pressure regulating mechanism including a throw valve 4b, respectively. In addition, the intermediate chamber 1 may include a blocking member 20. The blocking member 20 may be a locking member that is opened and closed to determine whether the lower chamber 2 communicates or may be a locking member that is opened and closed by rotation along the circumferential direction. In this embodiment, a gate valve that may be opened and closed by the blocking member 20 was used.

Hereinafter, with reference to the drawings will be described in detail the configuration and the effect of the gas inlet line according to an embodiment of the present invention.

The blocking member 20 according to the exemplary embodiment of the present invention may have a hollow shape and the gas inflow line 11 may be installed to communicate with the inside of the blocking member 20. At this time, the bottom surface of the blocking member 20 may be formed with a plurality of inlets 20a having a diameter of several mm at intervals of several cm. At this time, the inlet 20a is formed perpendicular to the ground and may be opened and closed by opening and closing the blocking member 20.

In addition, according to a modification of the present invention, the gas inlet line 11 may be extended to be disposed on the bottom surface of the blocking member 20. Referring to FIG. 2, the gas inlet line 11 includes an elongated end connected to a gas supply device and a hydraulic control mechanism and the other end connected to the inside of the crystal growth path, and the other end has a tongue shape. It can be seen that a plurality of inlets formed on the lower surface of the tongue is perpendicular to the ground.

At this time, the tongue may be arranged in the gas inlet line in the circumferential direction from the center of the chamber, may be formed like a net, the gas inlet line may be formed by repeating the circular pattern at regular intervals. It may be formed in a cross pattern.

A plurality of inlets may be arranged at regular intervals on the tongue, and the plurality of inlets may have the smallest diameter at the lowermost end thereof, so that the flow density of the gas may be constant.

Referring to FIG. 3A, the gas inlet line 11 may be arranged like a mesh with a plurality of concentric circles having a constant diameter, and the plurality of inlets may be perpendicular to the ground at regular intervals on the gas inlet line 11. Formed.

In addition, referring to Figure 3b, the gas inlet line 11 is arranged in a cross-shaped pattern at the center of the chamber on the lower surface of the blocking member 20 according to a modification of the present invention, a predetermined distance to the cross-shaped gas inlet line A plurality of discharge ports are formed perpendicular to the ground.

It is not limited to this arrangement, the gas inlet line according to the present invention may be arranged in a circular, radial or a combination of circular and radial form and the plurality of inlets are spaced at regular intervals in the gas inlet line constituting the complex pattern It may be formed perpendicular to the.

At this time, the direction of the inlet can be processed to have a constant direction with respect to the direction perpendicular to the ground so that there is no local pressure change.

The gas inlet line 11 has no inlet horizontal to the ground, and one end of the gas inlet line is closed so that the gas inlet line 11 extending to the lower chamber forms a closed curved surface, and only the gases are perpendicular to the ground. It is injected into the lower chamber (2) through a plurality of inlets arranged to be.

According to one embodiment of the present invention, the rising gas flow in the section process can be prevented and the pressure change according to the position near the inlet of the gas inlet line can be minimized. In addition, the kinetic component of the input gas may be formed to match the gas flow direction inside the growth furnace.

4 is a gas flow state diagram of part A of FIG. 1.

Referring to Figure 4, according to the gas inlet line structure according to an embodiment of the present invention, it can be seen from the simulation results that the gas flow does not occur from the bottom along the growth path wall.

 The present invention can provide a gas inlet for preventing the generation of vortex of the gas introduced into the growth furnace and the upward flow rising from the bottom.

By preventing the reverse flow of gas to prevent the contamination of the oxide inside the growth by the reverse flow, it is possible to minimize the decrease in crystal yield.

By enabling the section process, the upper and lower chambers can be separated and used according to various purposes.

Claims (19)

In the single crystal growth apparatus by the Czochralski method, A lower chamber in which a silicon melt is disposed, an upper chamber in which ingots growing from the silicon melt are pulled up, and an intermediate chamber connected between the upper and lower chambers, and an inlet of a gas inlet line supplying gas to the lower chamber; The single crystal growth apparatus is formed perpendicular to the ground. The method of claim 1, The gas inlet line is in communication with the blocking member for opening and closing the lower chamber disposed between the lower chamber and the intermediate chamber. The method of claim 1, The gas inlet line extends to the lower portion of the blocking member. The method of claim 1, The gas inlet line is a single crystal growth apparatus formed with a plurality of inlets perpendicular to the ground. The method of claim 4, wherein Single crystal growth apparatus in which the inlet of the gas inlet line is opened and closed by opening and closing the blocking member. The method of claim 1, The gas inlet line is a single crystal growth apparatus that is constantly arranged in the radial direction about the concentric axis of the lower chamber. The method of claim 1, The gas inlet line is disposed along the circumferential direction of the blocking member. The method of claim 1, The gas inlet line is arranged crosswise around the central axis of the lower chamber. The method of claim 1, Single crystal growth apparatus by processing the direction of the inlet to have a constant direction with respect to the direction perpendicular to the ground so that there is no local pressure change. The method of claim 1, Wherein said gas inlet line does not have an inlet horizontal to the ground. Long end connected to the gas supply and the other end connected to the inside of the crystal growth furnace, The other end is formed in a tongue shape and a gas inlet line is formed in the lower surface of the tongue a plurality of inlets perpendicular to the ground. The method of claim 11, The tongue is a gas inlet line formed like a mesh. The method of claim 11, The tongue is a gas inlet line is formed in the gas inlet line is extended in a circular pattern at regular intervals. The method of claim 11, The tongue is a gas inlet line formed with the gas inlet line extending in a cross pattern. The method according to any one of claims 12 to 14, The tongue is a gas inlet line with a plurality of inlets arranged at regular intervals. The method according to any one of claims 12 to 14, The plurality of inlets are gas inlet line is formed the smallest diameter of the lower end. The method according to any one of claims 12 to 14, The gas inlet line is a gas inlet line formed of a good plastic material. The method according to any one of claims 12 to 14, The gas inlet line is processed so that the direction of the inlet has a constant direction with respect to the direction perpendicular to the ground so that there is no local pressure change. The method according to any one of claims 12 to 14, The gas inlet line is a gas inlet line forming a closed surface.

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