KR100736641B1 - Electro-optical circuit board and fabricating method thereof - Google Patents

Abstract

An electro-optical circuit board and a fabricating method thereof are provided to reduce a volume of the board by embedding a passive element and a photoelectric element in the board. In an electro-optical circuit board, a resistance layer(100) and a capacitor layer(200) are bonded to each other by a first prepreg(610). The capacitor layer(200) is bonded to an inductor layer(300) by a second prepreg(630). The inductor layer(300) is bonded to a photoelectric element layer(400) by a third prepreg(650). The photoelectric element layer(400) is boned to an optical waveguide layer(500) by a transparent epoxy(670). An insulation layer(510) and an electrode(520) of the optical waveguide layer(500) are removed to be exposed. Reflective mirrors(571,572) are formed on the photoelectric element layer(400). A driver chip(710) for driving a light emitting device(420) and a light receiving device(430) and an IC chip for driving other electro-optical circuit board are formed on the electrode(520) of the optical waveguide layer(500). Via holes(800) and wiring patterns(850) are formed in the respective layers for electrically connecting the resistance layer(100), the capacitor layer(200), the inductor layer(300), the photoelectric element layer(400), and the optical waveguide layer(500).

Description

Electro-optical circuit board and fabrication method

1 is a plan view and a cross-sectional view showing a resistance layer having only the resistance of the present invention.

2 is a plan view and a cross-sectional view showing a capacitor layer having only the capacitor of the present invention.

3 is a plan view and a sectional view of an inductor layer having only an inductor of the present invention;

4 is a plan view and a cross-sectional view showing an optoelectronic device layer having only a light emitting device and a light receiving device of the present invention.

5 is a plan view and a cross-sectional view showing an optical waveguide layer having only an optical waveguide of the present invention.

6 is a cross-sectional view showing an embodiment of the electro-optical circuit board of the present invention.

7 is a cross-sectional view showing another embodiment of the electro-optical circuit board of the present invention.

8 is a cross-sectional view showing another embodiment of the electro-optical circuit board of the present invention.

9A to 9F are cross-sectional views showing one embodiment of a method of manufacturing an electro-optical circuit board of the present invention.

10A to 10D are cross-sectional views showing another embodiment of the method of manufacturing the electro-optical circuit board of the present invention.

Explanation of symbols on the main parts of the drawings

100: resistive layer 200: capacitor layer

300: inductor layer 400: photoelectric element layer

500: optical waveguide layer 610: first prepreg

630: second prepreg 650: third prepreg

670: transparent epoxy 710: driving chip

The present invention relates to an electro-optical circuit board and a method of manufacturing the same.

Printed Circuit Board (PCB) is a core component of electrical and electronic products that connects or supports various electronic components to the printed circuit board according to the circuit design of the electrical wiring.It is a home appliance, communication device, and industrial equipment. Overall passive components used.

The PCB attaches a thin plate such as copper to one side of a phenol resin insulator plate or an epoxy resin insulator plate, and then etches the thin plate according to the wiring pattern of the circuit to form a necessary circuit and form a via hole for attaching and mounting components. do.

These PCBs are classified into single-sided boards, double-sided boards, and multi-layered boards according to the number of wiring circuit surfaces. The higher the number of layers, the better the mounting force of the parts, which are used in high-precision products.

Meanwhile, in order to cope with the demand for miniaturization and high functionality of electronic products according to the development of the electronic industry, the electronic industry technology has been developed toward inserting resistors, capacitors, ICs, and the like into a substrate.

That is, in the related art, a general individual chip resistor or individual chip capacitor is mounted on a surface of a PCB, but recently, a printed circuit board incorporating passive elements such as a resistor or a capacitor has been developed.

The most important feature of the passive printed circuit board is that it is not necessary to mount a separate chip resistor or capacitor on the surface of the printed circuit board because the passive device is already provided as part of the printed circuit board.

However, in case of PCB, there is a limitation of high-capacity high-speed transmission due to the limitation of transmission speed (transmission speed: ~ 2.5Gbps), high crosstalk between electric lines and constraint of mounting density (50Lines / Inch). The generated electromagnetic waves affect the operation of other electrical equipment and cause controversy over the hazards to the human body.

In order to solve this problem, the passive circuit and the opto-electronic printed circuit board, that is, the electro-optical circuit board (EOCB).

The electro-optical circuit board is a medium for transmitting signals through an optical waveguide formed in a substrate using light emitting elements such as a vertical cavity surface emitting laser (VCSEL) and laser diode (LDSEL) and light receiving elements such as a photo detector (PD). Use as.

The electro-optic circuit board has a transmission speed of several tens of times or more than a conventional PCB, and since the wiring integration per unit area is 10 times higher, it is greatly advantageous to manufacture ultra-high speed / miniature high-tech equipment.

In addition, since optical signals are used instead of electric signals, there are no malfunctions due to radio interference, and thus, they are used in high-tech parts inside automobiles and aircrafts, and are expected to occupy important positions in household appliances because they generate little electromagnetic waves.

However, most of the related arts related to the electro-optical circuit board have been focused on constructing a silicon chip for transmission, a light emitting part, an optical substrate part, a light detection part, a reception silicon chip, and the like based on a silicon substrate. In addition, an optical line is mounted on a surface of an optical backplane, which is a type of optical PCB for signal connection between system boards, to transmit an optical signal.

However, this configuration is a variant of the optical transmission and reception module has a big difference in the technical characteristics of the direct application to the general PCB.

That is, the prior art focused on realizing the transmission of the optical signal through the optical element and the optical waveguide in the substrate, there is a problem in the practical use due to the lack of compatibility with the existing PCB.

In addition, the reflective element in the optical waveguide may be deformed during the lamination process, thereby making it difficult to inject light emitted from the photoelectric element into the core.

Accordingly, an object of the present invention is to separately manufacture each layer constituting the electro-optical circuit board, and then to sequentially laminate each layer by a lamination method using a prepreg and a transparent epoxy, it is easy to be compatible with the existing PCB manufacturing process. An electro-optic circuit board and its manufacturing method are provided.

A preferred embodiment of the electro-optical circuit board of the present invention includes a passive element layer having a passive element formed on the first insulating layer, a passive element layer bonded on the passive element layer, and a light emitting element and a light receiving unit formed on the second insulating layer. An optical waveguide formed with an optoelectronic device layer, an optical waveguide bonded to an upper portion of the optoelectronic device layer, and formed of an upper cladding layer, a core, and a lower cladding layer; and a third insulating layer formed on the optical waveguide. And an optical waveguide layer formed at one end and the other end of the light reflecting element to reflect light generated from the light emitting device and to proceed to the core, and a reflection mirror for reflecting light traveling to the core to the light receiving device.

Another preferred embodiment of the electro-optical circuit board of the present invention is a passive element layer having a passive element formed on top of the first insulating layer, and a second insulating layer and the second insulating layer bonded to the passive element layer. An optical waveguide layer formed of an upper cladding layer, a core, and an upper cladding layer, the optical waveguide layer having a reflection mirror formed at one end and the other end of the optical waveguide, and the reflection mirror above the upper clad layer; It characterized in that it comprises a light emitting element and a light receiving element formed in the corresponding region.

Preferred embodiments of the method for manufacturing an electro-optical circuit board of the present invention include a passive element layer having a passive element formed on the first insulating layer, an optoelectronic element layer formed with a light emitting element and a light receiving element formed on the second insulating layer, (3) preparing an optical waveguide layer in which an optical waveguide consisting of a lower clad layer, a core, and an upper cladding layer is formed on the insulating layer, and a prepreg is interposed between the passive element layer and the optoelectronic element layer; After the thermocompression bonding, by interposing a transparent epoxy layer between the optoelectronic device layer and the optical waveguide layer, followed by thermocompression bonding, and reflecting the light generated from the light emitting device to one end and the other end of the optical waveguide. Advancing to a core and forming a reflection mirror for reflecting light directed to the core to the light receiving element.

Another embodiment of the manufacturing method of the electro-optical circuit board of the present invention, the passive element layer in which the passive element is formed on the first insulating layer, the light consisting of a lower clad layer, a core, an upper clad layer on the second insulating layer. Preparing an optical waveguide layer having a waveguide and reflecting mirrors formed at one end and the other end of the optical waveguide, interposing a prepreg between the passive element layer and the optical waveguide layer, and then thermally compressing the optical waveguide layer. And forming a light emitting device and a light receiving device in a region corresponding to the reflective mirror on the upper clad layer of the optical waveguide layer.

Hereinafter, an electro-optical circuit board of the present invention and a manufacturing method thereof will be described in detail with reference to FIGS. 1 to 10. In describing the present invention, when it is determined that the detailed description of the known technology related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

1 is a plan view and a cross-sectional view showing a resistance layer having only a resistance of the present invention.

As shown in the drawing, the resistance layer 100 of the present invention includes an insulating layer 110, a ground electrode 120 formed under the insulating layer 110, and a plurality of electrodes formed on the insulating layer 110. 130 and a resistance material 140 formed between the electrodes 130.

Looking at the manufacturing method of the resistive layer 100, first, a photoresist is formed on the copper clad laminate (CCL), and the upper copper foil layer of the copper foil laminated plate is etched through an exposure and development process, thereby forming a plurality of electrodes. To form 130.

Herein, the copper foil laminate refers to a thin laminate coated with copper on both surfaces of the insulating layer 110.

Subsequently, the resist material paste is printed by using a screen printing method using a squeeze braid or the like, thereby forming the resist material 140 between the electrodes 130. In this case, various resistances may be implemented according to the width and length of the resistance material 140 formed between the electrodes 130.

The lower copper foil layer of the copper foil laminate is used as the ground electrode 120.

2 is a plan view and a cross-sectional view showing a capacitor layer having only the capacitor of the present invention.

As shown, the capacitor layer 200 of the present invention is formed on the insulating layer 210, the insulating layer 210, the lower electrode 220, the dielectric layer 230, the upper electrode 240 sequentially It consists of a plurality of capacitors 250 are stacked.

Referring to the method of manufacturing the capacitor layer 200, first, a first metal layer, a dielectric layer, and a second metal layer are sequentially stacked on the insulating layer 210, and a photoresist is applied on the second metal layer.

Subsequently, after the photoresist is patterned and etched from the second metal layer to the first metal layer using the patterned photoresist as an etch mask, the lower electrode 220 and the dielectric layer 230 are formed on the insulating layer 210. A plurality of capacitors 250 formed of the upper electrode 240 are formed.

Here, a capacitor having various capacitances may be implemented according to the area of the upper electrode 240 and the lower electrode 220 and the type of the dielectric layer 230.

3 is a plan view and a cross-sectional view showing an inductor layer having only an inductor of the present invention.

As shown in the drawing, the inductor layer 300 of the present invention includes an insulating layer 310 and an inductor 320 formed on the insulating layer 310.

Referring to the method of manufacturing the inductor layer 300, first, a metal layer and a photoresist are formed on the insulating layer 310, the photoresist is patterned, and the metal layer is etched using the patterned photoresist as an etch mask. As a result, the inductor 320 is formed on the insulating layer 310.

4 is a plan view and a cross-sectional view of an optoelectronic device layer having only a light emitting device and a light receiving device of the present invention.

As shown in the drawing, the photoelectric device layer 400 of the present invention includes an insulating layer 410, a light emitting device 420, and a light receiving device 430 formed on the insulating layer 410.

Here, a vertical cavity surface emitting laser (VCSEL), a laser diode (LD), or the like is used as the light emitting device 420, and a photo detector (PD) is used as the light receiving device 430.

Looking at the manufacturing method of the optoelectronic device layer 400, first forming a copper foil layer and a photoresist on the insulating layer 410, patterning the photoresist, and then using the patterned photoresist as an etching mask By etching the layer, a wiring pattern is formed on the insulating layer 410.

Subsequently, the light emitting device 420 and the light receiving device 430 are adhered to the upper portion of the wiring pattern by using a conductor paste. In the drawings, the wiring pattern is omitted for convenience.

5 is a plan view and a cross-sectional view showing an optical waveguide layer having only an optical waveguide of the present invention.

As shown in the drawing, the optical waveguide layer 500 of the present invention includes an insulating layer 510, an electrode 520 formed under the insulating layer 510, and a lower cladding formed on the insulating layer 510. A layer 530, a core 540 formed on the lower clad layer 530, and an upper clad layer 550 formed on the core 540.

Looking at the manufacturing method of the optical waveguide layer 500, first, an electrode 520 made of copper foil is formed under the insulating layer 510, and a lower clad layer 530 is formed on the insulating layer 510.

Subsequently, after the core 540 is formed on the lower clad layer 530 through an embossing process, the upper clad layer 550 is formed to surround the core 540 and the lower clad layer 530. do.

6 is a cross-sectional view showing an embodiment of an electro-optical circuit board of the present invention.

As shown therein, the resistance layer 100 and the capacitor layer 200 are bonded by the first prepreg 610, and the capacitor layer 200 and the inductor layer 300 are connected to the second prepreg 630. Is bonded to each other, the inductor layer 300 and the optoelectronic device layer 400 are joined by a third prepreg 650, and the optoelectronic device layer 400 and the optical waveguide layer 500 are transparent. Bonded by epoxy 670,

The insulating layer 510 and the electrode 520 of the optical waveguide layer 500 in the region corresponding to the light emitting device 420 and the light receiving device 430 of the optoelectronic device layer 400 are removed and exposed from the top. Reflective mirrors 571 and 572 are formed in the optical waveguides in the regions corresponding to the light emitting element 420 and the light receiving element 430.

For operation of a driver chip 710 and other electro-optic circuit boards for driving the light emitting device 420 and the light receiving element 430 on the electrode 520 of the optical waveguide layer 500. Necessary IC chips (not shown) are formed,

Via holes 800 and wiring patterns 850 for electrically connecting the resistance layer 100, the capacitor layer 200, the inductor layer 300, the optoelectronic device layer 400, and the optical waveguide layer 500 are respectively provided. It is formed on each layer.

Here, the first prepreg 610, the second prepreg 630 and the third prepreg 650 is impregnated with a glass fiber (heat-curable resin, such as epoxy resin) B-stage (stage) It says the sheet which hardened to.

The optoelectronic device layer 400 and the optical waveguide layer 500 are bonded to each other via a transparent epoxy 670 instead of a prepreg, and the transparent epoxy 670 emits light of the optoelectronic device layer 400. Epoxy is used that is transparent to the light emitted from device 420.

That is, the transparent epoxy 670 uses an epoxy that transmits the light emitted from the light emitting device 420, for the reason that light emitted from the light emitting device 420 is at least transmitted to the optical waveguide layer 500. In order to convey with the loss of.

The reflective mirrors 571 and 572 are formed by cutting the optical waveguide at an inclined angle, and the inclined angle is preferably 45 °.

A metal film such as Al, Cr, Au, Ag, or the like may be deposited on the reflective mirrors 571 and 572 to improve reflection characteristics. A reflective dielectric film may be used in addition to the metal film.

The via hole 800 is filled with a conductive material to electrically connect the wiring patterns 850 formed on each laminate of the electro-optical circuit board, and the via hole 800 is formed using a laser drill or a mechanical drill. do.

In the electric optical circuit board configured as described above, when the light emitting device 420 is driven and operated by the driving chip 710, the light emitted from the light emitting device 420 passes through the transparent epoxy 670. The light is reflected by the reflective mirror 571 of the optical waveguide layer 500 to enter the core 540.

The light incident and propagated through the core 540 is reflected by the reflection mirror 572 to pass through the transparent epoxy 670, and then is input to the light receiving element 430 of the photoelectric element layer 400. .

7 is a cross-sectional view showing another embodiment of the electro-optical circuit board of the present invention.

As shown therein, a via hole 900 is formed under the light emitting device 420 and the light receiving device 430 of the optoelectronic device layer 400, and the via hole 900 includes a third prepreg 650, It is formed through the inductor layer 300, the second prepreg 630, the capacitor layer 200, the first prepreg 610, and the resistor layer 100. Here, the element form of each layer is omitted for convenience.

The light emitting device 420 and the light receiving device 430 generate more heat as the signal transmission speed increases. Therefore, heat generated from the light emitting device 420 and the light receiving device 430 is efficiently discharged to the outside through the via hole 900.

8 is a cross-sectional view showing yet another embodiment of an electro-optical circuit board of the present invention.

As shown therein, the resistance layer 100 and the capacitor layer 200 are bonded by the first prepreg 610, and the capacitor layer 200 and the inductor layer 300 are connected to the second prepreg 630. The inductor layer 300 and the optical waveguide layer 500 are joined by a third prepreg 650,

A driver chip for driving the light emitting device 420 and the light receiving device 430 and the light emitting device 420 and the light receiving device 430 on the upper cladding layer 550 of the optical waveguide layer 500. 710 and other IC chip (not shown) necessary for the operation of the

The insulating layer 510 and the electrode 520 of the optical waveguide layer 500 under the light emitting element 420 and the light receiving element 430 are removed and correspond to the light emitting element 420 and the light receiving element 430. Reflecting mirrors 571 and 572 are formed in the optical waveguide in the region to be formed.

The embodiment differs from the embodiment shown in FIG. 6 by bonding the optical waveguide layer 500 by changing the top and bottom of the optical waveguide layer 500, and driving the light emitting device 420 and the light receiving device 430 without forming an optoelectronic device layer. The chip 710 is formed on the upper clad layer 550 of the optical waveguide layer 500.

As such, when the upper and lower sides of the optical waveguide layer 500 are joined to each other, the optical waveguide is not exposed to the outside to protect the optical waveguide, and the light emitting element 420 and the light receiving element 430 of the optical waveguide layer 500 By forming on the upper clad layer 550 and exposing to the outside, heat generated in the light emitting device 420 and the light receiving device 430 may be efficiently emitted.

9A to 9F are cross-sectional views showing one embodiment of a method of manufacturing an electro-optical circuit board of the present invention.

As shown in the drawing, first, the first prepreg 610 is interposed between the pre-fabricated resistive layer 100 and the capacitor layer 200, and then thermally compresses the resistive layer 100 and the capacitor layer 200. Are bonded (FIG. 9A).

In this case, after aligning the resistance layer 100 and the capacitor layer 200 using guide holes, and forming a via hole for electrically connecting the resistance layer 100 and the capacitor layer 200, Its interior is filled with a conductive material.

Next, the second prepreg 630 and the inductor layer 300 are positioned on the capacitor layer 200, and then thermally compressed to bond the capacitor layer 200 and the inductor layer 300 (FIG. 9b).

At this time, the capacitor layer 200 and the inductor layer 300 are aligned through the guide hole, and the capacitor layer 200 and the inductor layer 300 are electrically connected through the via hole.

Subsequently, the third prepreg 650 and the optoelectronic device layer 400 are positioned on the inductor layer 300, and then thermally compressed to bond the inductor layer 300 and the optoelectronic device layer 400 ( 9c).

In this case, a via hole for electrically connecting the inductor layer 300 and the optoelectronic device layer 400 is formed, and the inside thereof is filled with a conductive material.

Subsequently, the transparent epoxy 670 and the optical waveguide layer 500 are positioned on the optoelectronic device layer 400, and then thermally compressed to bond the optoelectronic device layer 400 and the optical waveguide layer 500 to each other (FIG. 9d).

In this case, the upper cladding layer 550 of the optical waveguide layer 500 is positioned downward, and then bonded to the optoelectronic device layer 400 through the transparent epoxy 670.

Here, the transparent epoxy 670 refers to an epoxy that transmits the light emitted from the light emitting device 420 of the optoelectronic device layer 400, through which the light emitted from the light emitting device 420 is minimized. The optical waveguide layer 500 is transferred to the optical waveguide layer 500.

Similarly, after forming a via hole for electrically connecting the optoelectronic device layer 400 and the optical waveguide layer 500, the inside thereof is filled with a conductive material.

Next, the insulating layer 510 and the electrode 520 of the optical waveguide layer 500 positioned on the light emitting device 420 and the light receiving device 430 of the optoelectronic device layer 400 are removed and exposed from the top. In addition, reflective mirrors 571 and 572 are formed in the optical waveguide located above the light emitting device 420 and the light receiving device 430 (FIG. 9E).

In this case, metal layers 580 such as Al, Cr, Au, and Ag may be coated on the reflective mirrors 571 and 572 to improve reflection characteristics.

Here, in order to effectively radiate the heat generated from the light emitting device 420 and the light receiving device 430 to the outside, the resistive layer from the third prepreg 650 under the light emitting device 420 and the light receiving device 430 A via hole penetrating up to 100 may be further formed.

In addition, the pressure applied in the thermocompression step is preferably 80 to 120 kg / cm 2, and the heating temperature is preferably about 150 to 350 ° C.

Subsequently, an operation of a driver chip 710 and other electro-optical circuit boards for driving the light emitting device 420 and the light receiving device 430 on the electrode 520 of the optical waveguide layer 500 is performed. An IC chip (not shown) necessary for forming is formed (FIG. 9F).

In the manufacturing method of the present invention, the stacking order of each layer is not limited to this embodiment, and can be changed in various ways depending on the circuit configuration.

In manufacturing the electro-optical circuit board as described above, the passive device layer such as the insulating layer 100, the capacitor layer 200, the inductor layer 300, and the optoelectronic device layer 400 and the optical waveguide layer 500 are separately. After fabrication, lamination using a prepreg or the like has the following advantages.

First, since each layer is manufactured separately, the manufacturing process is separated, thereby making it easier to manufacture. In addition, when the respective layers are stacked, the existing PCB manufacturing process such as lamination is used, thereby facilitating compatibility with the electric PCB.

In addition, in the case of the present invention, since the passive element and the optoelectronic element are embedded in the substrate, there is no need to mount a separate passive element and the optoelectronic element on the substrate surface, thereby reducing the volume of the substrate.

10A to 10D are cross-sectional views showing another embodiment of the method of manufacturing the electro-optical circuit board of the present invention.

As shown in the drawing, first, the first prepreg 610 is interposed between the pre-fabricated resistive layer 100 and the capacitor layer 200, and then thermally compresses the resistive layer 100 and the capacitor layer 200. Is bonded (FIG. 10A).

In this case, after aligning the resistance layer 100 and the capacitor layer 200 using guide holes, and forming a via hole for electrically connecting the resistance layer 100 and the capacitor layer 200, Its interior is filled with a conductive material.

Next, the second prepreg 630 and the inductor layer 300 are positioned on the capacitor layer 200, and then thermally compressed to bond the capacitor layer 200 and the inductor layer 300 (FIG. 10b).

At this time, the capacitor layer 200 and the inductor layer 300 are aligned through the guide hole, and the capacitor layer 200 and the inductor layer 300 are electrically connected through the via hole.

Subsequently, a portion of the insulating layer 510 and the electrode 520 of the pre-fabricated optical waveguide layer 500 are removed, and the reflective mirror 571 is formed on the optical waveguide of the removed insulating layer 510 and the electrode 520. ) 572, the third prepreg 650 and the optical waveguide layer 500 are positioned on the inductor layer 300, and then thermally compressed to form the inductor layer 300 and the optical waveguide layer. 500 is bonded (FIG. 10C).

In this case, metal films 580 such as Al, Cr, Au, and Ag may be formed on the reflective mirrors 571 and 572 to improve reflection characteristics. The optical waveguide layer 500 and the inductor layer 300 may be formed. ) And via holes for electrical connection are then filled with a conductive material.

Subsequently, a driving chip for driving the light emitting device 420 and the light receiving device 430 and the light emitting device 420 and the light receiving device 430 on the upper cladding layer 550 of the optical waveguide layer 500. Driver Chip) 710 is formed (FIG. 10D).

The light emitting device 420 and the light receiving device 430 are formed in a region corresponding to the reflective mirrors 571 and 572 of the optical waveguide layer 500, and the light emitting device 420 is a vertical cavity surface emitting (VCSEL). A laser (LD), a laser diode (LD), and the like, and a photo detector (PD) is used as the light receiving element 430.

In the above, a method of sequentially forming each layer constituting the electro-optical circuit board has been described, but a method of interposing a prepreg and a transparent epoxy and laminating the layers collectively may be used.

Although the present invention has been described in detail with reference to exemplary embodiments above, those skilled in the art to which the present invention pertains can make various modifications to the above-described embodiments without departing from the scope of the present invention. I will understand.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.

As described above, according to the present invention, in fabricating an electro-optical circuit board, a passive element layer such as an insulating layer, a capacitor layer, and an inductor layer, an optoelectronic element layer, and an optical waveguide layer are separately prepared, and then a prepreg or the like. By laminating by using the lamination method, it is easy to be compatible with the existing PCB.

That is, when each layer is laminated, it uses an existing PCB manufacturing process such as lamination, so there is an advantage that the compatibility with the existing PCB is excellent.

In addition, since each layer constituting the electro-optical circuit board is manufactured separately, the manufacturing process is separated, thereby making it easier to manufacture.

In addition, since passive devices and optoelectronic devices are embedded in the substrate, separate passive devices and optoelectronic devices do not need to be mounted on the substrate surface, thereby reducing the volume of the substrate.

Claims (16)

A passive element layer having a passive element formed on the first insulating layer; An optoelectronic device layer bonded to the passive device layer and having a light emitting device and a light receiving device formed on the second insulating layer; And An optical waveguide bonded to an upper portion of the optoelectronic device layer, the optical waveguide including an upper cladding layer, a core, and a lower cladding layer; and a third insulating layer formed on the optical waveguide, and at one end and the other end of the optical waveguide; And an optical waveguide layer formed with a reflection mirror for reflecting the light generated by the light to the core and reflecting the light directed to the core to the light receiving element. The method of claim 1, Between the passive device layer and the optoelectronic device layer, An electro-optic circuit board, further comprising a plurality of passive element layers comprising an insulating layer and a passive element formed on the insulating layer. The method according to claim 1 or 2, And a via hole penetrating from the second insulating layer to the first insulating layer under the light emitting element and the light receiving element. The method of claim 1, The optoelectronic device layer is bonded to the passive element layer by prepreg, the optical waveguide layer is bonded to the optoelectronic device layer by transparent epoxy, and the transparent epoxy is light emitted from the light emitting device. An electro-optical circuit board, characterized in that the transmission. A passive element layer having a passive element formed on the first insulating layer; It is bonded to the passive element layer, and consists of an optical waveguide consisting of a second cladding layer and a lower cladding layer, a core, an upper cladding layer formed on the second insulating layer, a reflection mirror at one end and the other end of the optical waveguide An optical waveguide layer on which is formed; And And an light emitting element and a light receiving element formed in an area corresponding to the reflective mirror on the upper cladding layer. The method of claim 5, Between the passive element layer and the optical waveguide layer, An electro-optic circuit board, further comprising a plurality of passive element layers comprising an insulating layer and a passive element formed on the insulating layer. The method of claim 5, The optical waveguide layer is bonded to the passive element layer by a prepreg (Prepreg). The method according to claim 1 or 5, And the reflective mirror is inclined by cutting the optical waveguide, and the inclined angle is 45 °. The method of claim 8, And an metal film made of any one metal selected from Al, Cr, Au, and Ag is formed on the inclined surface. The method according to claim 1 or 5, The passive element is any one of a resistor, a capacitor, an inductor. The method according to claim 1 or 5, The light emitting device is a VCSEL (Vertical Cavity Surface Emitting Laser) or LD (Laser Diode), the light receiving device is an electrical optical circuit board, characterized in that the PD (Photo Detector). A passive element layer having a passive element formed on the first insulating layer, a photovoltaic element layer having a light emitting element and a light receiving element formed on the second insulating layer, and a lower clad layer, a core and an upper clad layer formed on the third insulating layer Preparing an optical waveguide layer on which an optical waveguide is formed; Interposing a prepreg between the passive device layer and the optoelectronic device layer, and then thermally compressing the prepreg; Intercalating the transparent epoxy between the optoelectronic device layer and the optical waveguide layer, and then thermocompressing; And And reflecting light generated from the light emitting device to one end and the other end of the optical waveguide to the core, and forming a reflection mirror reflecting the light traveling to the core to the light receiving device. Manufacturing method. The method of claim 12, After forming the reflective mirror, And forming a via hole penetrating from the second insulating layer to the first insulating layer under the light emitting element and the light receiving element. An optical waveguide including a passive element layer having a passive element formed on the first insulating layer and a lower cladding layer, a core, and an upper clad layer formed on the second insulating layer, and a reflective mirror at one end and the other end of the optical waveguide. Preparing each of the optical waveguide layers formed thereon; Interposing a prepreg between the passive element layer and the optical waveguide layer, and then thermally compressing the prepreg; And And forming a light emitting element and a light receiving element in a region corresponding to the reflective mirror on the upper clad layer of the optical waveguide layer. The method according to claim 12 or 14, wherein The reflective mirror is formed by cutting the optical waveguide obliquely, and the inclined angle is 45 ° manufacturing method of an electric optical circuit board. The method according to claim 12 or 14, wherein The light emitting device is a VCSEL (Vertical Cavity Surface Emitting Laser) or LD (Laser Diode), The light receiving device is a manufacturing method of an electro-optical circuit board, characterized in that the PD (Photo Detector).

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