KR100724190B1 - Coating device for photoresist - Google Patents

Coating device for photoresist Download PDF

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Publication number
KR100724190B1
KR100724190B1 KR1020050131330A KR20050131330A KR100724190B1 KR 100724190 B1 KR100724190 B1 KR 100724190B1 KR 1020050131330 A KR1020050131330 A KR 1020050131330A KR 20050131330 A KR20050131330 A KR 20050131330A KR 100724190 B1 KR100724190 B1 KR 100724190B1
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South Korea
Prior art keywords
photoresist
wafer
nozzle
wafer chuck
slit nozzle
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KR1020050131330A
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Korean (ko)
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박진태
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동부일렉트로닉스 주식회사
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Priority to KR1020050131330A priority Critical patent/KR100724190B1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
    • B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
    • B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
    • B25B11/005—Vacuum work holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 포토레지스트 도포장치에 관한 것으로서, 하우징(10)과, 하우징(10)의 내부에 설치되며 외부로부터 이송된 반도체 웨이퍼(W)가 진공 흡착되어 안착되는 웨이퍼 척(20)과, 웨이퍼 척(20)을 회전시키는 회전축(30)과, 회전축(30)에 회전력을 인가하는 구동 전동기(40)와, 웨이퍼 척(20)에 안착된 웨이퍼(W)의 표면에 포토레지스트를 도포하도록 웨이퍼의 직경과 동일한 길이를 가지는 슬릿노즐구(142)가 구비된 노즐(140)을 포함한다. 따라서 웨이퍼의 직경과 동일한 길이를 가지는 슬릿노즐구가 구비된 노즐로 하여 회전되는 웨이퍼 상에 포토레지스트를 도포시킴으로써, 균일한 도포 두께를 갖게되며, 포토레지스트의 사용이 최소화는 효과를 가지고 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist coating apparatus, comprising: a housing (10), a wafer chuck (20) installed inside the housing (10) and transported from outside by vacuum suction, and a wafer chuck (20). The wafer 30 to apply photoresist to the surface of the wafer W seated on the wafer chuck 20, the drive shaft 40 for applying the rotational force to the rotation shaft 30, the rotation shaft 30 for rotating the 20, and the rotation shaft 30. It includes a nozzle 140 provided with a slit nozzle sphere 142 having the same length as the diameter. Therefore, by applying the photoresist on the wafer rotated by using a nozzle having a slit nozzle sphere having the same length as the diameter of the wafer, it has a uniform coating thickness, has the effect of minimizing the use of the photoresist.

포토레지스트, 노즐, 슬릿노즐구 Photoresist, Nozzle, Slit Nozzle

Description

포토레지스트 도포장치{COATING DEVICE FOR PHOTORESIST}Photoresist Coating Equipment {COATING DEVICE FOR PHOTORESIST}

도 1은 종래 기술에 따른 포토레지스트 도포장치의 일 예를 도시한 개략 구성도이고,1 is a schematic block diagram showing an example of a photoresist coating apparatus according to the prior art,

도 2는 본 발명에 따른 포토레지스트 도포장치를 도시한 단면도이고,2 is a cross-sectional view showing a photoresist coating apparatus according to the present invention,

도 3은 본 발명에 따른 포토레지스트 도포장치의 사용 상태도이다.3 is a state diagram of use of the photoresist coating apparatus according to the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 하우징 20 : 웨이퍼 척10 housing 20 wafer chuck

30 : 회전축 40 : 구동 전동기30: rotating shaft 40: drive motor

140 : 노즐 142 : 슬릿노즐구140: nozzle 142: slit nozzle ball

144 : 노즐홈 146 : 벤트홀 144: nozzle groove 146: vent hole

본 발명은 반도체 소자 제조를 위한 포토레지스트 도포장치에 관한 것으로서, 보다 상세하게는 반도체 웨이퍼 상에 포토레지스트를 도포하는 포토레지스트 도포장치에 관한 것이다.The present invention relates to a photoresist coating device for manufacturing a semiconductor device, and more particularly to a photoresist coating device for applying a photoresist on a semiconductor wafer.

반도체 웨이퍼에 집적회로를 형성하기 위한 웨이퍼 제조 공정은 실리콘 기판 에 산화막을 성장시키고 불순물을 침적시키며, 침적된 불순물을 실리콘 기판 내로 원하는 깊이까지 침투시키는 확산공정과, 식각이나 이온주입이 될 부위의 보호 부위를 선택적으로 한정하기 위해 마스크(mask)나 레티클(reticle)의 패턴을 웨이퍼 위에 만드는 사진공정, 포토레지스트 막질에 대한 현상이 끝단 후 포토레지스트 막질 밑에 성장되거나 침적 또는 증착된 박막들을 가스나 화학약품을 이용하여 선택적으로 제거하는 식각공정, 및 화학기상증착(CVD)이나 이온주입 또는 금속 증착 방법을 이용하여 특정한 막을 형성시키는 박막 공정 등의 단위 공정을 포함한다.The wafer fabrication process for forming an integrated circuit on a semiconductor wafer includes a diffusion process of growing an oxide film on a silicon substrate, depositing impurities, infiltrating the deposited impurities to a desired depth into the silicon substrate, and protecting portions to be etched or ion implanted. Photolithographic process of forming a mask or reticle pattern on the wafer to selectively define the area, and after the development of the photoresist film is finished, the thin film grown, deposited or deposited under the photoresist film is gas or chemical Etching step to selectively remove using a, and a unit process such as a thin film process to form a specific film using chemical vapor deposition (CVD), ion implantation or metal deposition method.

이와 같은 단위 공정들 중 사진공정에서는 반도체 웨이퍼에 균일한 두께의 포토레지스트 막질을 형성하기 위하여 스핀 코팅(spin coating) 방식의 포토레지스트 도포 장치의 사용이 일반화되어 있다. 스핀 코팅 방식의 포토레지스트 도포 장치는 반도체 웨이퍼를 회전시키고 그 상태에서 반도체 웨이퍼의 표면에 포토레지스트를 떨어뜨려 회전력과 원심력에 의해 포토레지스트가 균일한 두께로 코팅되는 장치이다.In the photolithography process, the use of a spin coating photoresist coating apparatus is commonly used to form a photoresist film having a uniform thickness on a semiconductor wafer. The spin coating type photoresist coating apparatus is a device in which a photoresist is coated with a uniform thickness by rotating and centrifugal force by rotating a semiconductor wafer and dropping photoresist on the surface of the semiconductor wafer in the state.

도 1은 종래 기술에 따른 포토레지스트 도포장치의 일 예를 도시한 개략 구성도이다.1 is a schematic block diagram showing an example of a photoresist coating apparatus according to the prior art.

도 1에서 도시된 포토레지스트 도포장치(1)는 사발 형태로 된 하우징(10)과 하우징(10)의 내측에 포토레지스트가 하우징(10)에 묻는 것을 방지하기 위한 내부 하우징(11)이 설치되어 있고, 그 하우징(11)의 내부에 설치되며 외부로부터 이송된 반도체 웨이퍼(W)가 진공 흡착되어 안착되는 웨이퍼 척(20)과, 그 웨이퍼 척(20)을 회전시키는 회전축(30)과 구동 전동기(40)와, 웨이퍼 척(20)의 상부에서 포토레지 스트를 떨어뜨려 주는 노즐(50) 등을 포함하여 구성된다.The photoresist coating apparatus 1 shown in FIG. 1 includes a housing 10 in a bowl shape and an inner housing 11 installed inside the housing 10 to prevent the photoresist from being buried in the housing 10. And a wafer chuck 20 mounted inside the housing 11 and transported from the outside by vacuum suction and seating, a rotating shaft 30 for rotating the wafer chuck 20, and a driving motor. 40 and a nozzle 50 for dropping the photoresist from the upper portion of the wafer chuck 20.

작동은, 반도체 웨이퍼(W)가 웨이퍼 척(20)에 탑재되어 진공 압력에 의해 고정된 상태에서 구동 전동기(40)의 동작에 따라 회전축(30)이 회전되어 웨이퍼 척(20)에 회전력이 인가된다. 웨이퍼 척(20)은 회전되며 탑재되어 있는 웨이퍼(W)를 회전시키게 된다. 이때, 웨이퍼(W)의 상부에서 노즐(50)로부터 포토레지스트가 웨이퍼(W)의 표면에 도포된다. 웨이퍼(W)의 표면에 도포된 포토레지스트는 웨이퍼 척(20)의 회전력에 의해 필요한 정도의 일정한 두께를 갖게 된다.In operation, the rotating shaft 30 is rotated in accordance with the operation of the drive motor 40 while the semiconductor wafer W is mounted on the wafer chuck 20 and fixed by vacuum pressure, and a rotational force is applied to the wafer chuck 20. do. The wafer chuck 20 is rotated to rotate the mounted wafer W. At this time, a photoresist is applied to the surface of the wafer W from the nozzle 50 at the top of the wafer W. The photoresist applied to the surface of the wafer W has a constant thickness as required by the rotational force of the wafer chuck 20.

그런데, 이처럼 웨이퍼의 표면에 포토레지스트를 떨어뜨려 회전력과 원심력에 의해 포토레지스트가 균일한 두께로 코팅되는 종래의 도포장치에서, 토출되는 포토레지스트 량의 1/10 정도만이 웨이퍼에 실제 도포됨으로써, 웨이퍼의 전면에 포토레지스트를 도포시키기 위해서는 그 만큼 많은 양의 포토레지스트가 소요되는 문제점이 있었다.However, in the conventional coating apparatus in which the photoresist is dropped on the surface of the wafer and the photoresist is coated with a uniform thickness by rotational and centrifugal force, only about one tenth of the amount of photoresist discharged is actually applied to the wafer. In order to apply photoresist on the entire surface of the photoresist, a large amount of photoresist is required.

본 발명은 상기한 바와 같은 결점을 해소시키기 위하여 안출된 것으로서, 웨이퍼의 직경과 동일한 길이를 가지는 슬릿노즐구가 구비된 노즐로 하여 회전되는 웨이퍼 상에 포토레지스트를 도포시킴으로써, 균일한 도포 두께를 갖게되며, 포토레지스트의 사용이 최소화될 수 있는 포토레지스트 도포장치를 제공하는 것을 그 목적으로 한다.The present invention has been made in order to solve the above-described defects, by applying a photoresist on a rotating wafer by using a nozzle provided with a slit nozzle sphere having a length equal to the diameter of the wafer, to have a uniform coating thickness It is an object of the present invention to provide a photoresist coating apparatus in which the use of the photoresist can be minimized.

상술한 목적을 달성하기 위한 본 발명은, 하우징과, 하우징의 내부에 설치되며 외부로부터 이송된 반도체 웨이퍼가 진공 흡착되어 안착되는 웨이퍼 척과, 웨이퍼 척을 회전시키는 회전축과, 회전축에 회전력을 인가하는 구동 전동기와, 웨이퍼 척에 안착된 웨이퍼의 표면에 포토레지스트를 도포하도록 웨이퍼의 직경과 동일한 길이를 가지는 슬릿노즐구가 구비된 노즐을 포함하되, 노즐은, 슬릿노즐구의 내측 길이 방향에 노즐홈이 형성되어, 포토레지스트가 일부 저장되어 분출압력이 균일하게 조절되며, 상부측에는 포토레지스트에서 발생되는 기포를 배출시키기 위한 벤트홀이 형성되고, 노즐과 웨이퍼와의 이격거리는 0.5mm∼3mm의 범위내인 것을 특징으로 하는 포토레지스트 도포장치를 제공한다. The present invention for achieving the above object is a housing, a wafer chuck installed in the housing and transferred from the outside is vacuum-sucked and seated, a rotating shaft for rotating the wafer chuck, and a drive for applying rotational force to the rotating shaft. And a nozzle provided with an electric motor and a slit nozzle port having a length equal to the diameter of the wafer so as to apply photoresist to the surface of the wafer seated on the wafer chuck, wherein the nozzle has a nozzle groove formed in the inner longitudinal direction of the slit nozzle port. The part of the photoresist is stored so that the ejection pressure is uniformly controlled, and a vent hole for discharging bubbles generated in the photoresist is formed on the upper side, and the separation distance between the nozzle and the wafer is in the range of 0.5 mm to 3 mm. A photoresist coating apparatus is provided.

본 발명의 상기 목적과 여러 가지 장점은 이 기술 분야에 숙련된 사람들에 의해 첨부된 도면을 참조하여 아래에 기술되는 발명의 바람직한 실시 예로부터 더욱 명확하게 될 것이다.The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시 예에 대하여 상세하게 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 따른 포토레지스트 도포장치를 도시한 단면도이고, 도 3은 본 발명에 따른 포토레지스트 도포장치의 사용 상태도이다.2 is a cross-sectional view showing a photoresist coating apparatus according to the present invention, Figure 3 is a state diagram of the use of the photoresist coating apparatus according to the present invention.

도시된 도 2에서의 포토레지스트 도포장치는, 사발 형태로 된 하우징(10:도1에 도시)과 하우징(10)의 내측에 포토레지스트가 하우징(10)에 묻는 것을 방지하기 위한 내부 하우징(11:도1에 도시)이 설치되어 있고, 그 하우징(11)의 내부에 설치되며 외부로부터 이송된 반도체 웨이퍼(W)가 진공 흡착되어 안착되는 웨이퍼 척(20:도1에 도시)과, 그 웨이퍼 척(20)을 회전시키는 회전축(30:도1에 도시)과 구동 전동기(40:도1에 도시)와, 웨이퍼 척(20)의 상부에서 포토레지스트를 떨어뜨려 주는 노즐(140) 등을 포함하여 구성된다.The illustrated photoresist coating device in FIG. 2 includes a bowl-shaped housing 10 (shown in FIG. 1) and an inner housing 11 for preventing photoresist from adhering to the housing 10 inside the housing 10. 1, a wafer chuck 20 (shown in FIG. 1), which is installed inside the housing 11, and in which the semiconductor wafer W transferred from the outside is vacuum-adsorbed and seated, and the wafer A rotating shaft 30 (shown in FIG. 1), a driving motor 40 (shown in FIG. 1) for rotating the chuck 20, a nozzle 140 for dropping the photoresist from the top of the wafer chuck 20, and the like. It is configured by.

여기서 본 발명의 특징에 따른 노즐(140)은, 직사각형의 장방형으로 웨이퍼(W)의 직경과 동일한 길이를 가지는 슬릿노즐구(142)가 형성된다.Here, the nozzle 140 according to the feature of the present invention has a rectangular rectangular slit nozzle sphere 142 having the same length as the diameter of the wafer W is formed.

그리고 슬릿노즐구(142)의 내측면에는 노즐홈(144)이 길이 방향을 따라서 형성되어, 포토레지스트가 일부 저장되어 분출압력이 균일하게 조절되도록 하였으며, 또한, 노즐(140)의 상부측에는 미도시된 포토레지스트 공급부로부터 공급되는 포토레지스트에서 발생되는 기포를 배출시키기 위한 벤트홀(vent hole:146)이 더 형성된다.In addition, a nozzle groove 144 is formed in the inner surface of the slit nozzle port 142 along the longitudinal direction, so that a part of the photoresist is stored so that the ejection pressure is uniformly adjusted. A vent hole 146 is further formed to discharge bubbles generated in the photoresist supplied from the photoresist supply.

한편, 슬릿노즐구(142)의 개구 갭(gap:W))은 50㎛∼1000㎛의 범위내인 것이 바람직하며, 더욱이 포토레지스트 도포시 노즐(140)과 웨이퍼(W)와의 이격거리(H)는 0.5mm∼3mm의 범위내인 것과 웨이퍼 척(110)의 회전속도는 10RPM∼4000RPM의 범위내인 것이 바람직하다.On the other hand, the opening gap (W) of the slit nozzle port 142 is preferably in the range of 50 μm to 1000 μm, and further, the separation distance H between the nozzle 140 and the wafer W during photoresist coating. ) Is preferably in the range of 0.5 mm to 3 mm, and the rotational speed of the wafer chuck 110 is in the range of 10 RPM to 4000 RPM.

이와 같이 구성된 본 발명에 따른 포토레지스트 도포장치의 작용을 설명하면 다음과 같다.Referring to the operation of the photoresist coating apparatus according to the invention configured as described above are as follows.

반도체 웨이퍼(W)가 웨이퍼 척(20)에 탑재되어 진공 압력에 의해 고정된 상태에서 구동 전동기(40)의 동작에 따라 회전축(30)이 회전되어 웨이퍼 척(20)에 회전력이 인가된다. 웨이퍼 척(20)은 회전되며 탑재되어 있는 웨이퍼(W)를 회전시키게 된다. 이때, 웨이퍼(W)의 상부에서 노즐(140)의 슬릿노즐구(142)를 통하여 포토레지스트가 웨이퍼(W)의 표면에 도포된다. In the state where the semiconductor wafer W is mounted on the wafer chuck 20 and fixed by the vacuum pressure, the rotation shaft 30 is rotated in accordance with the operation of the drive motor 40 to apply the rotation force to the wafer chuck 20. The wafer chuck 20 is rotated to rotate the mounted wafer W. At this time, the photoresist is applied to the surface of the wafer W through the slit nozzle opening 142 of the nozzle 140 on the wafer W.

그리고 도포 완료 후, 일정한 균일 두께를 맞추기 위하여 웨이퍼 척(20)을 1500RPM∼4000RPM으로 고속 회전시켜서 일정한 최종 두께를 갖게 된다.After the application is completed, the wafer chuck 20 is rotated at a high speed of 1500 RPM to 4000 RPM to achieve a constant uniform thickness to have a constant final thickness.

이로써, 웨이퍼(W)의 직경에 해당하는 노즐(140)은 서서히 회전하는 웨이퍼(W)의 전면을 균일하게 도포시킬 수 있으며, 더욱이, 슬릿노즐구(142)의 노즐홈 (144)에서는 포토레지스트의 일부 저장되어 분출압력이 균일하게 조절되어 균일도를 향상시키게 된다. As a result, the nozzle 140 corresponding to the diameter of the wafer W may uniformly apply the entire surface of the slowly rotating wafer W, and moreover, the photoresist may be formed in the nozzle groove 144 of the slit nozzle port 142. Part of is stored, the ejection pressure is uniformly adjusted to improve the uniformity.

또한, 종래의 회전력 및 원심력에 의한 도포방식에 비하여 슬릿노즐구(142)가 구비된 노즐(140)에서는 포토레지스트의 사용량이 현저하게 줄어들게 된다. In addition, the amount of the photoresist is significantly reduced in the nozzle 140 provided with the slit nozzle port 142 as compared with the conventional application method by the rotational force and the centrifugal force.

이상에서 설명한 것은 본 발명에 따른 포토레지스트 노즐구조를 실시하기 위한 하나의 실시예에 불과한 것으로서, 본 발명은 상기한 실시예에 한정되지 않고, 이하의 특허청구범위에서 청구하는 바와 같이 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능한 범위까지 본 발명의 기술적 정신이 있다고 할 것이다. What has been described above is just one embodiment for implementing the photoresist nozzle structure according to the present invention, and the present invention is not limited to the above-described embodiment, and as claimed in the following claims, the gist of the present invention Without departing from the technical spirit of the present invention to the extent that any person of ordinary skill in the art to which the present invention pertains various modifications can be made.

이상에서 설명한 바와 같이, 본 발명에 의한 포토레지스트 도포장치에서는, 웨이퍼의 직경과 동일한 길이를 가지는 슬릿노즐구가 구비된 노즐로 하여 회전되는 웨이퍼 상에 포토레지스트를 도포시킴으로써, 균일한 도포 두께를 갖게되며, 포토레지스트의 사용이 최소화는 효과를 가지고 있다.As described above, in the photoresist coating apparatus according to the present invention, a photoresist is applied onto a wafer which is rotated by using a nozzle having a slit nozzle port having a length equal to the diameter of the wafer, thereby providing a uniform coating thickness. The use of photoresist is minimal.

Claims (6)

삭제delete 삭제delete 삭제delete 하우징과,Housings, 상기 하우징의 내부에 설치되며 외부로부터 이송된 반도체 웨이퍼가 진공 흡착되어 안착되는 웨이퍼 척과, A wafer chuck installed in the housing and in which a semiconductor wafer transferred from the outside is vacuum-sucked and seated; 상기 웨이퍼 척을 회전시키는 회전축과,A rotating shaft for rotating the wafer chuck; 상기 회전축에 회전력을 인가하는 구동 전동기와,A drive motor for applying a rotational force to the rotating shaft; 상기 웨이퍼 척에 안착된 상기 웨이퍼의 표면에 포토레지스트를 도포하도록 상기 웨이퍼의 직경과 동일한 길이를 가지는 슬릿노즐구가 구비된 노즐,A nozzle provided with a slit nozzle port having a length equal to the diameter of the wafer to apply photoresist to the surface of the wafer seated on the wafer chuck, 을 포함하되,Including, 상기 노즐은, The nozzle, 상기 슬릿노즐구의 내측 길이 방향에 노즐홈이 형성되어, 포토레지스트가 일부 저장되어 분출압력이 균일하게 조절되며, 상부측에는 포토레지스트에서 발생되는 기포를 배출시키기 위한 벤트홀이 형성되고, 상기 노즐과 상기 웨이퍼와의 이격거리는 0.5mm∼3mm의 범위내인 것을 특징으로 하는 포토레지스트 도포장치.A nozzle groove is formed in the inner longitudinal direction of the slit nozzle port, and a portion of the photoresist is stored to uniformly control the ejection pressure, and a vent hole for discharging bubbles generated in the photoresist is formed at an upper side thereof. A photoresist coating apparatus, wherein the separation distance from the wafer is in the range of 0.5 mm to 3 mm. 제 4 항에 있어서,The method of claim 4, wherein 상기 슬릿노즐구의 갭(gap)은 50㎛∼1000㎛의 범위내인 것을 특징으로 하는 포토레지스트 도포장치.The gap of the slit nozzle sphere is in the range of 50㎛ to 1000㎛ photoresist coating apparatus. 제 4 항에 있어서,The method of claim 4, wherein 상기 웨이퍼 척의 회전속도는 10RPM∼4000RPM의 범위내인 것을 특징으로 하는 포토레지스트 도포장치.And a rotational speed of the wafer chuck is in the range of 10 RPM to 4000 RPM.
KR1020050131330A 2005-12-28 2005-12-28 Coating device for photoresist KR100724190B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990013579A (en) * 1997-07-03 1999-02-25 히가시데쓰로 Liquid treatment device
KR100205477B1 (en) 1994-04-15 1999-07-01 이시다 아키라 Coating device and coating method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100205477B1 (en) 1994-04-15 1999-07-01 이시다 아키라 Coating device and coating method
KR19990013579A (en) * 1997-07-03 1999-02-25 히가시데쓰로 Liquid treatment device

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