KR100701964B1 - Plasma display panel and the manufacturing method of the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display panel and a method of manufacturing the same, wherein the plasma display panel includes a protective film formed of magnesium oxide and hydrogen atoms, and thus the crystals forming the protective film have an [220] orientation. To increase the discharge efficiency.

Plasma Display Panel, MgO, Protective Film, Orientation

Description

Plasma display panel and the manufacturing method of the same

1 is a diagram showing the structure of a plasma display panel;

2 is a view showing a crystal structure of a protective film of a plasma display panel according to the prior art;

 3 is a view showing a crystal structure of a protective film of a plasma display panel according to the present invention;

4A to 4C are diagrams showing the results of X-ray diffraction analysis of the protective film of the plasma display panel according to the present invention;

FIG. 5 is a diagram showing a comparison result of X-ray diffraction analysis of a protective film and a conventional protective film of a plasma display panel according to the present invention;

6 is a diagram showing secondary electron emission coefficients of a protective film and a conventional protective film of a plasma display panel according to the present invention;

7 is a diagram illustrating a response characteristic according to a temperature of a protective film and a conventional protective film of a plasma display panel according to the present invention;

8 is a view illustrating a process of forming a protective film of the plasma display panel according to the present invention;

9 is a diagram illustrating an apparatus for manufacturing a protective film of a plasma display panel according to the present invention.

<Explanation of symbols on main parts of the drawings>

14: shield

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display panel and a method for manufacturing the same, and to a plasma display panel and a method for manufacturing the same, which may increase a response speed and secondary electron emission coefficient of the plasma display panel by forming a protective film having a crystal orientation. will be.

The plasma display panel according to the prior art is largely composed of a front substrate A and a rear substrate B as shown in FIG.

The front substrate A includes a scan electrode 1 and a sustain electrode 2 which are sequentially formed, a dielectric layer 3 stacked on the scan electrode and the sustain electrode, and a protective film 4 formed on the dielectric layer. Is done.

The scan electrode 1 and the sustain electrode 2 each have a relatively wide width and transparent electrodes 1a and 2a made of a transparent electrode material (ITO) to transmit visible light, and have a relatively narrow width. It is composed of bus electrodes 1b and 2b made of a metallic material provided to compensate for sheet resistance of the electrode.

When a driving signal for driving the plasma display panel is supplied to the scan electrode 1 and the sustain electrode 2, wall charges are accumulated in the dielectric layer 3, and the protective layer 4 is sputtered into the dielectric layer 3. ) And damage of secondary electrons.

An address electrode 6 is formed on the rear substrate B, and a dielectric layer 8 in which wall charges are accumulated on the address electrode is sequentially formed.

On the dielectric layer 8, the partition 7 partitioning the discharge space and the side surface of the partition and the bottom surface of the discharge space are excited by the ultraviolet rays generated by the discharge and are visible in any one of red, green or blue. Phosphor 9 for generating light is formed.

The protective film 4 is not only transparent so that visible light can be transmitted therethrough, but mainly MgO having excellent dielectric layer protection and secondary electron emission performance. The protective film made of MgO has a sputtering property to mitigate the effects of ion bombardment of the discharge gas during the operation of the plasma display panel, thereby protecting the dielectric layer 3 from ion collision and discharging secondary electrons. Transparent protective film that serves to lower the. The protective film is typically formed by stacking the dielectric layer 3 to a thickness of 3000 to 7000 Å.

The protective film 4 has a crystal structure as shown in FIG. 2, wherein the protective film has a [111] orientation in the thickness direction thereof, that is, a [111] plane having excellent sputtering properties in the thickness direction of the protective film. It is made.

At this time, if the protective film 4 is not densely formed, the electron emission property is low, and damage to the dielectric layer 3 due to ion collision cannot be effectively released.

The protective film 4 having the [111] orientation has a plurality of cylindrical crystals in order to increase electron emission. As shown in FIG. 2, the protective film having the [111] orientation is dense at a predetermined interval or more. It is difficult to form the resin so as to limit the secondary electron emission characteristics and sputtering characteristics of the protective film.

In particular, when the protective film 4 is not densely formed, the protective film does not effectively protect the dielectric layer 3, and as discharge occurs, impurities such as metal and moisture flow into the dielectric layer, thereby discharging characteristics of the plasma display panel. There is a problem that this is lowered.

The present invention has been made to solve the above problems of the prior art, by forming a crystal of the protective film of the plasma display panel in a [220] orientation in addition to the [111] orientation, thereby improving the secondary electron emission coefficient and improved response speed It is an object of the present invention to provide a plasma display panel and a method of manufacturing the same.

The plasma display panel according to the present invention for solving the above problems is characterized in that it comprises a protective film formed by including magnesium oxide and hydrogen atoms.

In this case, the crystal structure of the protective film is characterized by having a [220] orientation or a [220] orientation and a [111] orientation structure.

In addition, the method of manufacturing a plasma display panel according to the present invention includes forming an electrode on the glass, forming a dielectric layer on the glass, and depositing a protective film using a gas containing hydrogen on the dielectric layer. Characterized in that the configuration.

Here, the hydrogen-containing gas may be any one of water vapor and hydrogen gas, and in order to deposit the protective film, the protective film is further deposited using oxygen gas in addition to the gas containing hydrogen.

At this time, the protective film deposition is characterized in that the ion deposition method or electron beam deposition method.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. 3 is a view showing the crystal structure of the protective film of the plasma display panel according to the present invention, Figures 4a to 4c is a view showing the results of X-ray diffraction analysis of the protective film of the plasma display panel according to the present invention, Figure 5 X-ray diffraction analysis results of the protective film of the plasma display panel and the conventional protective film according to the invention is shown, Figure 6 is a view showing the secondary electron emission coefficient of the protective film and the conventional protective film of the plasma display panel according to the present invention. 7 is a diagram illustrating response characteristics according to temperatures of a protective film and a conventional protective film of a plasma display panel according to the present invention.

The plasma display panel includes a front substrate and a rear substrate on which a plurality of line-shaped electrodes are arranged in a row, and discharge gas is enclosed and bonded between the front substrate and the rear substrate.

The front substrate is covered with a dielectric layer covering the electrode on a surface facing the rear substrate, and a protective film 14 is formed on the dielectric layer.

When the plasma display panel is driven, an address discharge between the electrodes formed on the front substrate and the rear substrate is generated to form charge on the surface of the protective film 14 of the cell to be lit. The screen is displayed in the cell in which the charge is formed through the inter-electrode sustain discharge formed on the front substrate.

In this case, the passivation layer 14 protects the dielectric layer and the electrode from ion collision (sputtering) generated during the address discharge and the sustain discharge, and simultaneously discharges secondary electrons during the address discharge to maintain charge.

To this end, the protective film 14 is composed mainly of magnesium oxide (MgO) having excellent anti-sputtering properties and secondary electron emission. In addition, the protective film provided in the plasma display panel of the present invention further comprises hydrogen atoms in addition to magnesium oxide.

In general, the protective layer 14 is formed by making the inside of the vacuum chamber into an oxygen atmosphere and injecting an electron beam into the MgO fillet so that the MgO separated from the MgO fillet is laminated on the dielectric layer.

At this time, when the protective film 14 is formed by injecting a gas containing hydrogen atoms into the vacuum chamber, the protective film 14 includes the MgO and hydrogen atoms. When the protective film is formed containing hydrogen atoms in addition to the MgO, the protective film has a [220] alignment structure in addition to the conventional [111] alignment structure.

When the protective film 14 is formed of a [220] alignment structure or a mixture of the [220] alignment structure and the [111] alignment structure, the crystal structure of the protective film is denser as shown in FIG. 3. In addition, the crystal grain size is increased to improve plasma display panel characteristics.

That is, the protective film 14 is a layer in which a plurality of crystals extend in one direction and are dense, and one end of the cylindrical crystal is exposed. In the conventional protective film 4, the cylindrical crystal is shown in FIG. As seen from above, it looks like a triangle. In contrast, the protective film according to the present invention including hydrogen atoms in addition to MgO and having an [220] alignment structure, as shown in FIG. 3, has not only dense crystals formed therein, but also large crystal grain sizes and flat surfaces. Do.

Conventionally, when the protective film 14 is formed, the inside of the chamber is made into an oxygen atmosphere to form a protective film made of MgO. In addition to the oxygen, a gas containing hydrogen atoms such as water vapor or hydrogen gas is additionally injected into the chamber. When the protective film is formed, the crystal grain size of the protective film to be formed increases, so that crystals are formed more densely.

If the crystals of the protective film 14 are densely formed, the amount of impurities adsorbed on the protective film may be reduced, and the amount of impurities flowing into the dielectric layer may be reduced, thereby increasing the discharge efficiency of the plasma display panel.

In addition, when the protective film 14 is formed with a [220] alignment structure in addition to the conventional [111] alignment, the uniformity of the surface of the protective film is increased. When the flatness of the protective film surface is increased, sputter resistance of the protective film is increased. Properties will be improved.

In general, the protective film 14 forms the inside of the vacuum chamber in an oxygen atmosphere and then irradiates an MgO fillet with an electron beam to form a protective film on the dielectric layer.

As in the present invention, the protective film 14 having the [220] orientation or the orientation structure in which the [220] and [111] orientations are mixed may be formed by injecting a gas containing hydrogen into the chamber.

Even without injecting oxygen into the chamber and injecting only a gas such as water vapor or hydrogen gas, the protective layer 14 having the alignment structure of the [220] or [220] and [111] orientations may be formed. And a gas containing oxygen gas and hydrogen may be injected into the chamber to form a protective film having an orientation structure in which a [220] orientation or a [220] orientation and a [111] orientation are mixed.

As shown in FIG. 4A, when only water vapor (H ₂ O) is injected into the chamber without oxygen, a protective film 14 having a [111] alignment structure is formed in a state where the amount of water vapor is low (a), but the injected water vapor Increasing the flow rate forms a protective film having a [220] alignment structure (b).

In addition, as illustrated in FIG. 4B, when the water vapor (H ₂ O) is injected in an oxygen atmosphere, the protective film 14 having an [220] orientation may be formed more effectively than when water vapor is injected without oxygen.

For example, when the flow rate of water vapor (H ₂ O) is increased while the oxygen flow rate is 40 sccm, the protective film 14 having a [220] orientation other than the [111] orientation is formed, wherein the water vapor flow rate is 120 sccm or more. A protective film having an orientation is formed.

If the flow rate of oxygen is further increased, the protective film 14 can be formed more quickly, and the protective film 14 having the [220] alignment structure can be formed even if a small amount of water vapor (H ₂ O) is injected.

That is, as shown in FIG. 4C, in the state where the oxygen flow rate is 135 sccm, the strength and density of the protective film 14 formed without injecting water vapor (H ₂ O) can be increased. In addition, even when the oxygen flow rate is less than 40sccm injected water vapor can produce a protective film having a [220] orientation structure, when the oxygen flow rate is 40sccm state to inject water vapor of 120sccm or more to form a protective film having a [220] orientation. In contrast, in the state where the oxygen flow rate is 135 sccm, a protective film having a [220] alignment structure can be formed even under a water flow rate of 80 sccm or more (b). In addition, if the flow rate of the water vapor is further increased, the formation strength of the [111] alignment structure and the [220] alignment structure is similar, and thus a protective film having only the [220] alignment structure can be formed (c).

The characteristics of the plasma display panel when a gas containing hydrogen is injected during the formation of the protective film 14 while maintaining the same oxygen flow rate will be described.

At this time, the deposition atmosphere conditions are shown in Table 1 below.

TABLE 1

Conventional The present invention Oxygen flow rate (sccm) 135 135 Oxygen partial pressure (Pa) 4.0 × 10 ^-2 4.0 × 10 ^-2 Water vapor flow rate (sccm) 0 200 Vapor partial pressure (Pa) 0 1.5 × 10 ^-2 Substrate temperature (℃) 200 200 Deposition speed (Å / m) 2000 2000

As described above, the oxygen flow rate is formed the same, and when the water vapor flow rate is changed, the crystal orientation of the protective film 14 formed is different.

That is, as shown in FIG. 5, the protective film 14 formed by injecting only oxygen has a [111] alignment structure, whereas the protective film formed by injecting water vapor has a [220] alignment structure in addition to the [111] alignment structure. Will have at the same time.

At this time, the protective film 14 formed includes hydrogen atoms, and as shown in FIG. 3, the grain size of the protective film is increased by 50% or more as compared with the related art.

In particular, the protective film formed by including hydrogen atoms and having a [220] alignment structure has an increased secondary electron emission coefficient as shown in FIG. That is, unlike the protective film having only the [111] alignment structure, the protective film having the [111] alignment structure and the [220] alignment structure may increase the secondary electron emission coefficient γ by 20% or more to lower the discharge voltage.

The discharge gas injected into the plasma display panel collides with gas molecules to form priming particles, and the priming particles collide with the protective layer 14 to generate secondary electrons. As described above, when secondary electron generation increases in the passivation layer, discharge may occur even when a low voltage is applied.

Therefore, when the secondary electron emission coefficient γ increases, discharge occurs even at a low voltage, so that the discharge start voltage of the plasma display panel can be lowered. Since the plasma display panel is a device that operates under a high voltage, the power consumption of the display of the screen is considerable. Therefore, when the discharge start voltage of the plasma display panel is reduced, the power consumption of the plasma display panel can be reduced.

At this time, when the secondary electron emission coefficient γ increases by 20%, the discharge start voltage can be lowered by about 10V.

In addition, as shown in Fig. 7, the response speed at room temperature is also improved. That is, when the protective film having the [220] alignment structure is formed in addition to the [111] alignment structure, the jitter characteristic according to temperature is improved, and the response speed is increased.

In the case of the protective film 14 formed under the experimental conditions shown in Table 1, in the case of the protective film formed in the chamber in which water vapor (H ₂ O) is injected, the response speed at room temperature is improved by about 0.4 kPa, and the response at low temperature is achieved. The speed is also improved by 1.2 kW.

Here, the response speed is a time taken until the discharge occurs after the voltage is applied, and refers to the response speed of the address discharge. When the response speed increases, the width of the scan pulse applied to the electrode to reduce the address discharge can be reduced.

The plasma display panel has a long address period for writing cells to be turned on for the screen to be displayed. Therefore, as described above, if the width of the scan pulse is reduced, the address period can be shortened, and thus the sustain discharge efficiency can be increased by securing the sustain period of the sustain pulse or increasing the number of sustain pulses applied during one frame.

In particular, the response speed becomes more vulnerable as the temperature increases, and in the case of the protective film having the [220] alignment structure as described above, the response characteristic at room temperature is improved by about 0.4 kHz.

In addition, as shown in Table 2, when the protective film 14 has a [220] alignment structure, the high temperature margin is also improved.

TABLE 2

Conventional The present invention Discharge start voltage (V) 261.0 250.3 Response speed (㎲) Room temperature (30 ℃) 1.46 1.04 Low temperature (0 ℃) 2.75 1.53 High Temperature Margin ΔVa (V) 8.7 11.0 Luminance (cd / ㎡) 174.0 190.3 Power Consumption (W) 237.1 239.5 Efficiency (lm / W) 1.10 1.19

The high temperature margin refers to a difference between a voltage Va applied to the address electrode during the address period and an address voltage applied at a high temperature. In general, at room temperature, the address voltage is applied within the range of 60V to 65V. At high temperatures, the address voltage is lowered. In this case, when the address voltage is lowered, an error discharge may occur because address discharge is not performed. The high temperature margin means a difference between an address voltage applied at a high temperature and an address voltage applied at a room temperature so that the address discharge is performed without a false discharge. .

That is, when the address voltage Va of 65V is applied at room temperature, if the high temperature margin is 10V, the address discharge is applied by applying an address voltage of 55V at high temperature. In this case, when the high temperature margin is large, address discharge is performed without erroneous discharge even when a lower address voltage is applied, thereby increasing the efficiency of the plasma display panel.

As shown in Table 2, in the case of the protective film 14 having the [220] alignment structure, the high temperature margin is larger than that of the protective film having only the [111] alignment structure at 11V.

In addition, when the protective film 14 has the [220] alignment structure, both the luminance and the discharge efficiency are improved by about 10%.

That is, when the protective film 14 is formed to form a protective film by injecting a gas containing hydrogen atoms, the protective film is composed of MgO and hydrogen atoms, the alignment structure is [220] in addition to the [111] alignment structure It has a crystal plane.

Accordingly, the crystal grain size of the formed protective film 14 is increased by 50% or more, and the flatness of the surface of the crystal grain is increased to increase the secondary electron emission coefficient γ so that discharge is generated at a lower voltage than conventionally. do. In addition, the response speed, high temperature margin, and luminance characteristics are improved compared to the prior art, thereby increasing the efficiency of the plasma display panel.

Looking at the manufacturing method of the plasma display panel configured as described above is as follows. 8 is a view showing a process of forming a protective film of the plasma display panel according to the present invention, Figure 9 is a view showing a manufacturing apparatus of the protective film of the plasma display panel according to the present invention.

As shown in FIG. 8, after the electrodes 11 and 12 and the dielectric layer 13 are sequentially formed on the glass g (a and b), a protective film 14 is deposited on the dielectric layer. At this time, the protective film is deposited using a gas containing hydrogen, such as water vapor (H ₂ O), hydrogen gas (H ₂ ) (e).

The protective film 14 may be formed by an electron beam deposition method (E-Beam deposition method) or an ion plating method, a thick film printing method, a sputtering method, and the like, which is mainly used in the electron beam deposition method and the ion plattering method. It describes how the protective film is formed by means of, but is not limited to this.

First, the process of forming the protective film 14 by the electron beam deposition method will be described. As shown in FIG. 9, a manufacturing apparatus for forming the protective film by an electron beam deposition method basically includes a vacuum chamber 50, a pump (not shown) for reducing the inside of the chamber, and a fillet composed of MgO ( 60 is composed of an electron gun 51 for irradiating an electron beam.

In order to form the protective film 14, the vacuum chamber 50 has a gas injection unit (not shown) for injecting gas into the vacuum chamber, and includes a gas containing hydrogen atoms in the vacuum chamber. Inject

At this time, the gas that can be injected into the vacuum chamber 50 may be water vapor (H ₂ O), hydrogen gas and the like.

In order to form the protective film 14 using the water vapor (H ₂ O), the inside of the vacuum chamber is made into a water vapor atmosphere, and the electron gun 51 is used to irradiate the electron beam to the MgO fillet 60. When the electron beam is irradiated onto the MgO fillet, MgO is separated from the fillet and deposited on the dielectric layer 13 to form a protective film, wherein the MgO released from the fillet has excellent electron emission property [220] and [111] It is selectively formed in the plane orientation.

When the electron beam is irradiated to the MgO fillet in a water vapor atmosphere, as shown in FIG. 8, granular crystals are formed on the surface of the dielectric layer 13 (c). In the initial stage of deposition, the protective film 14 is formed on the surface of the dielectric layer. Small diameter granular crystals are formed because the material does not stick or fall on the surface of the dielectric layer.

When granular crystals are formed on the surface of the dielectric layer 13 and then heat treated, adjacent granular crystals are combined to form a plurality of seed crystals having a diameter larger than that of the granular crystals (d). Since the seed crystal is formed of a surface-oriented single crystal, continuing the vacuum deposition as described above to form a protective film 14 having a desired thickness in the crystal growth direction of the seed crystal (e).

In this case, in order to maintain the active state of the seed crystal after the heat treatment to facilitate crystal growth, the plasma display panel substrate P is preferably heated to 200 ° C.

In particular, when the protective film is formed by making the inside of the vacuum chamber 50 into a steam atmosphere, the protective film 14 alignment structure formed has a [220] orientation in addition to the [111] orientation unlike the conventional art.

To this end, the water vapor injected into the vacuum chamber 50 is to be a flow rate of 40sccm or more and 1000sccm or less, wherein the steam partial pressure should be at least 4.0X10 ^-3 Pa or more.

If the flow rate of the water vapor injected into the vacuum chamber 50 is too small, since the orientation of the protective film 14 does not have the [220] structure and is formed by the [111] orientation alone, the water vapor injected into the vacuum chamber is [ It should be implanted to such an extent that a protective film having an orientation structure is formed. On the contrary, if the amount of injected water vapor flow is too high, the protective film of the MgO base may not be formed properly, so the flow rate is 1000 sccm or less.

When the protective film 14 is formed under a water vapor atmosphere, the protective film shows crystals in which hydrogen atoms are mixed with MgO, and the grain size and surface flatness of the protective film are increased than the grain size and surface flatness of the protective film formed under a conventional oxygen atmosphere. Done.

As a result, the probability that the dielectric layer 13 is exposed to impurities is reduced, and the secondary electron emission coefficient of the passivation layer 14 is increased to lower the discharge start voltage. In addition, the response speed and the high temperature characteristics of the plasma display panel are improved, thereby improving the brightness and the discharge efficiency of the plasma display panel.

In addition, the protective layer 14 may be deposited under hydrogen atmosphere by injecting hydrogen gas (H ₂ ) into the vacuum chamber 50 as well as water vapor, in which case the flow rate of the injected hydrogen gas is 180 sccm or more. .

Even when the vacuum chamber 50 is formed in a hydrogen atmosphere, the protective film 14 is formed to have a crystal structure in which [111] and [220] orientations are mixed, or has a crystal structure having only [220] orientation. It is formed.

Also in this case, the grain size of the protective film 14, which is also formed, is increased in comparison with the related art, and the emission coefficient, response speed, and high temperature characteristics of the secondary electrons are improved to increase the discharge efficiency of the plasma display panel.

In this case, the protective layer 14 may be further injected into the vacuum chamber 50 by further injecting oxygen (O ₂ ) gas without injecting only a gas containing hydrogen atoms, such as water vapor (H ₂ O) or hydrogen gas (H ₂ ). Can increase the film formation efficiency.

That is, when oxygen is injected into the vacuum chamber 50 as in the conventional case of forming a protective film, the protective film 14 having the [220] orientation can be effectively formed. When oxygen is injected into the vacuum chamber 50 to form an oxygen atmosphere, oxygen defects may be suppressed from occurring in the crystal structure of the deposited material. That is, the Mg released from the MgO fillet is deposited on the surface of the passivation layer in combination with oxygen in the vacuum chamber.

For this purpose, the flow rate of oxygen injected into the vacuum chamber 50 should be 40 sccm or more, and the partial pressure should be about 1.0 × 10 ⁻² Pa or more.

As the flow rate of the oxygen injected into the vacuum chamber 50 increases, the protective film 14 having the oriented structure may be formed even when a gas containing a smaller amount of hydrogen atoms is injected, and the hydrogen atoms may include hydrogen atoms. When a gas containing oxygen and a hydrogen atom is injected, a protective film having a [220] alignment structure can be more effectively formed than when only a gas is injected.

Looking at the process of forming the protective film 14 by the ion plating method as follows.

The ion plating method is a method of irradiating a plasma beam generated in a vacuum chamber onto an evaporation material to ionize evaporated particles and to form a film. In this case, the evaporation material may be used in an ingot or in a granular state. Since the ionization rate is high, a deposition rate and a dense film may be formed.

That is, MgO particles are ionized by irradiating a plasma beam to the MgO fillet in the vacuum chamber, and the ionized MgO particles adhere to the surface of the dielectric layer to form a protective film.

In this case, when the protective film is formed after injecting a gas containing hydrogen atoms such as water vapor or hydrogen gas into the vacuum chamber, the protective film having a [220] alignment structure in addition to the [111] orientation can be formed.

In addition, when oxygen gas is injected into the vacuum chamber in addition to a gas containing hydrogen atoms, a protective film having an alignment structure is formed at a faster rate than when only a gas containing hydrogen atoms is injected. In particular, when a gas containing a predetermined amount or more of oxygen and hydrogen atoms is injected, the protective film has only a single orientation. When the protective film is formed in a single orientation, the sputtering resistance of the protective film is maximized.

To this end, the vacuum chamber is evacuated until it has a vacuum degree of about 7 × 10 ⁻⁷ Torr, and then vapor deposition is performed while maintaining a gas containing hydrogen atoms at about 1.0 × 10 ⁻³ Torr. In this case, the temperature of the plasma display panel substrate is maintained within a range of 200 ° C to 250 ° C.

When oxygen is injected into the vacuum chamber, the partial pressure of oxygen to be injected is about 1.0 × 10 ^-4 Torr, and the amount of gas containing hydrogen atoms to be injected is 1.0 × 10 ^-3 Torr or less. Although the amount of the gas containing the injected hydrogen atoms is too low, it is difficult to form a protective film having a [220] orientation, so that the amount of the gas containing the hydrogen atoms is 1.0 × 10 ⁻⁵ Torr or more. do.

As described above, the plasma display panel and the method of manufacturing the same according to the present invention have been described with reference to the illustrated drawings. Can be.

The plasma display panel and the method of manufacturing the same according to the present invention are configured as described above so that the protective film provided in the plasma display panel has an alignment structure to increase the secondary electron emission coefficient to lower the discharge start voltage of the plasma display panel. By improving the response speed, the discharge efficiency and the brightness are increased.

Claims (14)

A protective film made of magnesium oxide and hydrogen atoms, And the protective film has an alignment structure in the [220] direction. delete The method according to claim 1, The protective film is a plasma display panel, characterized in that the [111] alignment structure is formed in addition to the [220] alignment structure. A first step of forming an electrode on the glass; A second step of forming a dielectric layer on the glass; And depositing a protective film by injecting a gas containing hydrogen into the chamber on the dielectric layer. The method according to claim 4, The gas containing hydrogen (H) is a method of manufacturing a plasma display panel, characterized in that the water vapor (H ₂ O). The method according to claim 5, Wherein said water vapor has a partial pressure of at least 4.0 × 10 ⁻³ Pa or more. The method according to claim 5, The steam is a plasma display panel manufacturing method, characterized in that the flow rate is 40sccm or more and 1000sccm or less. The method according to claim 4, The gas containing hydrogen (H) is a manufacturing method of a plasma display panel, characterized in that the hydrogen gas (H ₂ ). The method of claim 8, The hydrogen gas is a plasma display panel manufacturing method, characterized in that the flow rate is 180sccm or more. The method according to claim 4, The third step is a method of manufacturing a plasma display panel, characterized in that the oxygen gas is injected into the chamber. The method of claim 10, The oxygen gas has a flow rate of 40sccm or more manufacturing method of the plasma display panel. The method of claim 10, Wherein the oxygen gas has a partial pressure of about 1.0 × 10 ⁻² Pa or more. The method according to claim 4, The protective film is a method of manufacturing a plasma display panel, characterized in that formed by the electron beam (E-beam) deposition method. The method according to claim 4, The protective film is formed by a high frequency ion plating method (ion-plating).

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