KR100687163B1 - Semiconductor process apparatus - Google Patents

Abstract

Uniform etching of large diameter wafers is realized.

An upper electrode and a lower electrode are provided in a processing tank of the semiconductor processing apparatus, and a gas supply for supplying a process gas into the processing tank is provided, and plasma is generated between the both electrodes to process the semiconductor sample.

The gas supply unit has a center distributor provided with a row of predetermined holes around the cylinder in a substantially cylindrical shape, and slidably accommodated around the center distributor, whereby a plurality of gas paths from the position in contact with the center distributor to the outer surface are formed. The distributor is provided. And by changing the mutual position of the said center distributor and the surrounding distributor, the heat of the said hole of the said center distributor and the gas path of the said peripheral distributor are communicated according to a recipe, and the process gas introduce | transduced into the said central distributor is conveyed to the said surroundings. It is supplied into the processing tank from the outer circumference of the dispenser.

Semiconductor processing equipment, center distributor, peripheral distributor, processing tank, recipe

Description

Semiconductor Processing Equipment {SEMICONDUCTOR PROCESS APPARATUS}

1 is a cross-sectional view showing a schematic structure of an etching apparatus according to an embodiment of the present invention.

2 is a diagram for explaining a gas supply unit in the present embodiment.

3 is a sectional view showing an example of another gas supplier of the present embodiment.

<Description of the code | symbol about the principal part of drawing>

10: etching apparatus

11: chamber (treatment tank)

12: lower stage (lower electrode)

13: upper electrode

14: control unit

15 wafer (semiconductor sample)

20 gas supply unit (gas introduction unit)

21: center divider

21a: hole

22: peripheral divider

22a: gas path

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus for processing a semiconductor sample using plasma, and is particularly applied to an etching apparatus or an etching apparatus in semiconductor manufacturing.

In semiconductor manufacturing, the most difficult problem when the wafer is largely sized is to realize uniform etching over the entire wafer. This is because there is a supply of abundant by-products (etching products) in the middle of the wafer, and there is an unavoidable non-uniformity factor that there is no object to be etched outward at the wafer edge portion.

As a countermeasure, a method of spraying gas toward the center of the wafer may be mentioned. In this case, however, any process or structure is effective, but it is highly likely to adversely affect other processes or structures.

In particular, in the case of etching contact holes, wirings, grooves, and other types of structures with one device, there is a problem.

The most important thing with a large diameter compatible etching apparatus is ensuring uniformity. As a parameter for determining this uniformity, the most important and difficult method is gas introduction method.

Although the method of supplying gas is performed from the upper part and from the side, etc., it is difficult to determine the introduction method with a wide margin which can respond to all processes. In particular, when the aperture ratio to be etched changes greatly, the adhesion between the center and the etch changes and obtaining uniformity becomes particularly difficult in large-diameter wafers.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and uniforms both at least one process or structure, for example, a contact structure in which a surface of a wafer is almost covered with a resist and a wiring structure having an etching area of at least half. It aims to ensure the property and to etch.

Moreover, it aims at realizing uniform etching of a large diameter wafer.

In addition, the present invention can vary the method of supplying a gas to a recipe, and widen a margin such as adjustment of uniformity.

The semiconductor processing apparatus of the present invention includes an upper electrode and a lower electrode in a processing tank, a gas supply for supplying a process gas into the processing tank, and generates a plasma between both electrodes to process a semiconductor sample. do.

The gas supply unit has a center distributor provided with a row of predetermined holes around the cylinder in a substantially cylindrical shape, and slidably accommodated around the center distributor, whereby a plurality of gas paths from the position in contact with the center distributor to the outer surface are formed. The distributor is provided. And by changing the mutual position of the center distributor and the peripheral distributor, the heat of the hole of the center distributor and the gas path of the peripheral distributor in accordance with the recipe, the process gas introduced into the center distributor to the peripheral distributor In the outer periphery of the supply to the treatment tank.

Thereby, uniform etching etc. can be performed also about a large diameter wafer.

Moreover, the semiconductor processing apparatus of another invention provides the said center distributor with a plurality of types of rows of holes along the longitudinal direction corresponding to a recipe, and makes the shaft of the center distributor divide by rotating the center distributor according to the recipe. The gas path of the peripheral distributor in communication with the heat is selected.

Moreover, the semiconductor processing apparatus of another invention provides the said center distributor with a plurality of types of rows of holes along the circumferential direction corresponding to a recipe, and moves the said center distributor up and down according to a recipe, The gas path of the peripheral distributor in communication with the heat is selected.

In addition, the semiconductor processing apparatus of another invention defines, in the peripheral distributor, a plurality of types of combinations of the gaseous paths corresponding to the recipe, and controls the distribution of the process gas supplied from the peripheral distributor into the processing tank according to the recipe. I did it.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings. In the drawings, the same or equivalent parts may be denoted by the same reference numerals and the description thereof may be simplified or omitted.

1 is a cross-sectional view showing a schematic structure of an etching apparatus according to an embodiment of the present invention.

As shown in Fig. 1, the etching apparatus 10 includes a chamber (process tank) 11, a lower stage 12 serving as a lower electrode provided below the chamber, and an upper electrode disposed above the chamber ( 13) and the control part 14 arrange | positioned under the lower stage 12 is provided. On the lower stage 12, a wafer 15 (semiconductor sample) is loaded. The control unit 14 includes a power introduction mechanism, an electrostatic chuck relationship, a wafer lift mechanism, a wafer temperature adjustment mechanism, and the like.

Moreover, the gas supply part (gas introduction part) 20 which is the characteristic of this embodiment is arrange | positioned under the upper electrode 13. As shown in FIG.

In this embodiment, the gas for generating plasma is introduced from the gas supply part 20 into the process tank 10 in the direction of the flow according to a recipe, and super speed.

In the chamber 11, discharge is generated by the introduction of power from the upper electrode 13 or the antenna, and plasma is generated. The wafer 15 loaded on the lower stage 12 is etched by this plasma gas.

2 is a diagram for explaining an example of the gas supply unit 20 in this embodiment.

As shown in FIG. 2, the gas supply part 20 consists of the center distributor 21 centered in a substantially cylindrical shape, and the hemispherical peripheral distributor 22 which accommodates the center distributor 21 in the center. . The central distributor 21 is provided with a plurality of holes 21a provided in the cylindrical surface according to a predetermined rule. The peripheral distributor 22 is provided with a plurality of gas paths 22a communicating outward from a position facing the hole 21a of the central distributor 21.

When the hole 21a of the center distributor 21 and the hole 22a of the peripheral distributor 22 are placed in a specific mutual position relationship, the selected group of holes 21a and the selected group of holes 22a are formed. In communication, it is designed to conduct the gas from the inside to the outside.

Process gas is introduced from the chamber top into the central distributor 21 (center) of the process gas supply (gas supply kit) 20. Although the inside of the center distributor 21 is devised to reduce the volume, it is basically hollow. The center distributor 21 is a mechanism that can rotate, and as shown in α or β, a row of holes 22a corresponding to the number of recipes is repeatedly formed.

It can be seen that many gas paths 22a are processed in the peripheral distributor 22 of the gas supplier (process gas supply kit) 20 as shown in the cross-sectional view.

The number of cuts in this path basically corresponds to the number of repetitions of rows of holes. For example, as shown in Fig. 2, when the rows of four types of holes are repeatedly processed four times, the same cross section exists at the portion rotated by 90 degrees.

2, it is also possible to widen the outlet of the terminal of the gas path 22a of the peripheral distributor 22, and to reduce the initial velocity of gas.

3 is a sectional view showing an example of another gas supplier (gas supply kit) of this embodiment.

In this example, the center distributor 21 moves up and down with respect to the peripheral distributor 22, and through this operation, the hole 21a of the central distributor 21 and the gas path 22a of the peripheral distributor 22 communicate with each other. The combination is changing.

As the position shown in FIG. 3, the level z communicates with the gas path 22a of the peripheral distributor 22 in the hole 21a of the central distributor 21. Now, when the position of the center distributor 21 is slightly lowered, the hole 21a at the position of the level x in the figure communicates with the gas path 22a of the peripheral distributor 22 and gas is introduced therefrom. If it rises a little, gas is introduced in the hole (path) of the position of the level y.

In the above example, it is stated that the hole for determining the two or more gas introduction paths in the central distributor 21 is processed, but it is also possible to have the peripheral distributor 22 have two or more gas introduction paths. In other words, if you look at the cross section from a different angle, the path will change.

Next, the specific example at the time of using the etching apparatus of this embodiment is demonstrated.

As an etching apparatus, the example of the 300 mm wafer-compatible oxide film etching apparatus of an ICP type is given.

An example of etching conditions is as follows.

Pressure: 40mTorr,

Gas flow rate: C4F8 = 50sccm, Ar = 300sccm, C0 = 200sccm, 02 = 30sccm

Power: Top electrode 3000 W (13.56 MHz), Bottom electrode 1000 W (400 kHz)

Gap: 15 cm

For example, if an edge stop is likely to occur due to an excessively strong adhesion at the center of the wafer in a contact pattern almost entirely covered with resist, a path of strong gas directivity toward the center of the wafer (for example, the heat of FIG. 2). [hole of (α)] is designated as a recipe.

On the other hand, in the case of inlaid groove processing where the adhesion is low and the uniformity of the etching rate is important, a route (for example, a hole of heat β in FIG. 2) that can supply a uniform gas on the entire surface of the wafer is designated as a recipe. .

As described above, in this embodiment, a gas supply (gas supply kit) is provided at the center of the upper electrode or the upper plate, and the process gas is provided in the chamber by two or more methods (flow direction or directivity) according to the recipe therefrom. To supply.

In order to realize a plurality of gas flow methods, a gas supplier (gas supply kit) is a hollow cylindrical shape, and a central distributor 21 in which a plurality of holes are opened, and a peripheral distributor 22 in which a plurality of gas introduction paths are processed. At the portion where the position of the hole 21a of the center distributor 21 and the position of the gas path 22a of the peripheral distributor 22 coincides by rotating or moving the center distributor 21 to a designated position by the recipe. Release gas into the chamber.

In general, there are many by-products at the center of the wafer, for example, the adhesion is stronger than the wafer edge portion. In order to reduce this effect, it is preferable to spray fresh process gas toward the center of the wafer, but in this structure, it can be realized by using a recipe with many gas paths toward the center of the wafer.

That is, a gas having a certain flow rate or more is supplied toward the center of the wafer, thereby expelling a gas having a strong adhesion component with a large proportion of by-products, replacing it with a fresh gas, and replacing the difference in the gas component from the wafer edge. Can be reduced.

On the other hand, when the difference between a center and an edge is hard to arise, and the one which flowed gas to the center and the edge similarly is inferior in uniformity, the recipe which can supply a gas uniformly to a center and an edge is selected.

As described above, in this embodiment, a gas supply (gas supply kit) is provided at the center of the upper plate of a processing apparatus such as an etching apparatus to increase the supply ratio to the center of the wafer, increase the ratio to the edge, and directivity ( It is possible to have a mechanism which makes the flow method of the gas which changes by changing the flow velocity) from the lower.

 The process gas is introduced into the center distributor (center portion) of the gas supply from the rear surface of the upper plate with the gas supply (gas supply kit). A large number of holes are opened in the center distributor (center portion), and the gas flows in accordance with the corresponding gas introduction path of the peripheral distributor by rotating or moving the center distributor (center) up and down. This rotation or vertical movement makes it possible to change to a recipe.

Thereby, even if the etching pattern of a wafer surface differs significantly, etching of the whole surface of a wafer can be performed evenly accordingly. In addition, uniform etching can also be performed on large-diameter wafers.

Since this invention is comprised as mentioned above, the following effects are exhibited.

(1) The uniformity of the etching rate in a wafer can be improved.                     

(2) The uniformity of the etching selectivity in the wafer can be improved.

(3) The uniformity of the etching shape in the wafer can be improved.

(4) The macro loading effect can be reduced.

Claims (4)

A semiconductor processing apparatus comprising an upper electrode and a lower electrode in a processing tank, and generating a plasma between the two electrodes to process a semiconductor sample. A central distributor having a substantially cylindrical row with a predetermined hole in the periphery thereof, and a peripheral distributor having a plurality of gas paths connected to the outer surface from a position in contact with the central distributor so as to be slidably accommodated around the central distributor; By changing the mutual position of the central distributor and the peripheral distributor, the heat of the hole of the central distributor and the gas path of the peripheral distributor are communicated according to the recipe, and the process gas introduced into the central distributor is transferred to the outer periphery of the peripheral distributor. And a gas supply for supplying the gas into the processing tank. The said center distributor divides | segments a plurality of types of holes along the longitudinal direction corresponding to a recipe, Axial-rotates the said center distributor according to a recipe, and communicates with the column of the hole of the said center distributor. A semiconductor processing apparatus characterized by selecting a gas path of a peripheral distributor. The said center distributor divides | segments a plurality of types of holes along the circumferential direction corresponding to a recipe, moves the said center distributor up and down according to a recipe, and communicates with the row of the hole of the said center distributor, The said center distributor. A semiconductor processing apparatus characterized by selecting a gas path of a peripheral distributor. The peripheral distributor according to claim 1, characterized in that a plurality of types of combinations of the gaseous paths are defined corresponding to the recipe, and the distribution of the process gas supplied from the peripheral distributor into the processing tank is controlled according to the recipe. Semiconductor processing apparatus.

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