KR100669774B1 - Flat panel display and method for fabricating the same - Google Patents

Abstract

The present invention discloses a flexible organic light emitting display device and a method of manufacturing the same, which can improve contrast by forming a dummy semiconductor pattern separated from a semiconductor layer of a thin film transistor to prevent reflection from a substrate made of a metal film.

An organic light emitting display device of the present invention comprises: a substrate; A thin film transistor having a semiconductor layer, a gate, and a source / drain electrode formed on the substrate; A display element having a pixel electrode connected to the thin film transistor; It includes a plurality of dummy patterns formed on the substrate except for the portion corresponding to the pixel electrode and electrically separated from the semiconductor layer.

The dummy pattern is made of the same material as the semiconductor layer and is selected from an amorphous silicon film and a polysilicon film. The dummy pattern serves as an anti-reflection film for preventing reflection of the substrate. The substrate includes a flexible substrate made of metal foil, and further includes an insulating film formed between the substrate, the semiconductor layer, and the dummy pattern.

Description

Flat panel display and manufacturing method thereof {Flat panel display and method for fabricating the same}

1 is a plan view of an organic light emitting display device according to an embodiment of the present invention;

2 is a cross-sectional structure diagram of an organic light emitting display device according to an embodiment of the present invention;

3 is a plan view of an organic light emitting display device according to another embodiment of the present invention;

4 is a cross-sectional structure diagram of an organic light emitting display device according to another embodiment of the present invention;

Explanation of symbols on the main parts of the drawings

200 and 400: metal foil substrates 205 and 405: buffer layer

210, 410: semiconductor layers 191, 195, 390: antireflection film

225, 425: gate 250, 450: protective film

260 and 460 anode electrodes 270 and 470 pixel separation layer

275, 391, 393, 395, 475: opening

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display device, and more particularly, to a flexible organic light emitting display device having an antireflection film for preventing reflection of a substrate made of metal foil, and a manufacturing method thereof.

The organic light emitting device is a self-light emitting device that emits light from an organic film layer formed between an anode electrode and a cathode electrode, and is classified into an inorganic light emitting device and an organic light emitting device according to the type of light emitting compound of the organic film layer. The light emitted from the thin layer is classified into a front, rear or double-sided light emitting device according to the direction in which it is emitted.

A top emission type organic light emitting display device is a display device in which light emitted from an emission layer of an organic layer is emitted in a direction opposite to a substrate, that is, toward an encapsulation substrate, and a bottom emission type organic light emitting display device is light emitted from an emission layer of an organic film layer. This is a display device emitted in the direction of the substrate.

In general, an active matrix organic light emitting display (AMOLED) includes a plurality of pixels arranged on a substrate, and each pixel includes at least one switching thin film transistor, one driving thin film transistor and a capacitor, and an organic light emitting diode. Since the thin film transistor and the capacitor include an electrode and a wiring made of a metal material, external light incident from the outside is reflected by the metal electrode and the wiring so that the contrast is greatly reduced.

In the organic light emitting display device, contrast is greatly reduced according to the intensity of external light. Japanese Patent Laid-Open No. 5-288209 discloses an organic light emitting display device having a polarizing plate attached to block external light. The Japanese patent was able to improve contrast by blocking external light by arranging a polarizing plate between the outer surface of the substrate from which light is emitted or between the substrate and the anode electrode.

However, the polarizing plate is expensive, and the polarizing plate not only blocks external light incident from the outside, but also blocks a part of light emitted from the light emitting layer of the organic layer.

On the other hand, a technique for preventing a decrease in contrast due to external light by forming a black matrix for external light blocking on a substrate has been proposed. Korean Laid-Open Patent Publication No. 2003-0037451 discloses a top-emitting organic light emitting display device having a black matrix for preventing reflection by external light. In the domestic patent, a light blocking film is formed on the entire surface of the lower part of the pixel electrode connected to the thin film transistor to block external light, thereby improving contrast. However, in the case of forming the light blocking film for blocking external light, there is a problem that a separate process for forming the light blocking film is required and the process is complicated.

Recently, interest in flexible organic light emitting display devices has increased, and such flexible organic light emitting display devices use a flexible substrate. In the flexible organic light emitting display device, a metal foil is used as the flexible substrate, or a polymer plastic film such as PET is used.

In the case of a top emission type organic light emitting display device using a flexible substrate such as a metal foil, there is a problem in that contrast is reduced due to reflection of light by the substrate of the metal foil.

The present invention is to solve the problems of the prior art as described above, the flexible organic electroluminescent display device and its manufacture capable of forming a anti-reflection film without additional process to prevent the contrast decrease due to the reflection of the metal foil substrate The purpose is to provide a method.

In order to achieve the above object, the present invention is a substrate; A thin film transistor having a semiconductor layer, a gate, and a source / drain electrode formed on the substrate; A display element having a pixel electrode connected to the thin film transistor; A flat panel display including a plurality of dummy patterns formed on the substrate except for a portion corresponding to the pixel electrode is electrically separated from the semiconductor layer.

The dummy pattern is made of the same material as the semiconductor layer and is selected from an amorphous silicon film and a polysilicon film. The dummy pattern serves as an anti-reflection film for preventing reflection of the substrate.

The substrate includes a flexible substrate made of metal foil, and further includes an insulating film formed between the substrate, the semiconductor layer, and the dummy pattern.

The display device may include the pixel electrode serving as a lower electrode; A pixel separation layer having an opening exposing a portion of the lower electrode; An organic layer formed in the opening of the pixel separation layer; An organic light emitting diode having an upper electrode formed on a substrate is included.

In addition, the present invention is a substrate; A thin film transistor having a semiconductor layer, a gate, and a source / drain electrode formed on the substrate; A display element having a pixel electrode connected to the thin film transistor; A dummy semiconductor layer formed on the substrate so as to be electrically separated from the semiconductor layer, wherein the dummy semiconductor layer includes a first opening formed at a portion corresponding to the pixel electrode, and for electrical separation from the semiconductor layer. A flat panel display device having a second opening is provided.

The dummy semiconductor layer is made of the same material as the semiconductor layer and is selected from an amorphous silicon film and a polysilicon film. The dummy semiconductor layer serves as an antireflection film for preventing reflection of the substrate.

In addition, the present invention comprises the steps of forming a first insulating film on the substrate; Simultaneously forming a semiconductor layer and an anti-reflection film; Forming a thin film transistor having a gate electrode, a source / drain region formed on the semiconductor layer, and a source / drain electrode connected to the source / drain region on a substrate; Forming a second insulating film having a via hole exposing one of the source / drain electrodes of the thin film transistor on a substrate; And forming a display device on the second insulating layer, the display device including a pixel electrode connected to one of the source / drain electrodes of the thin film transistor.

 The substrate includes a flexible substrate made of metal foil, and the first insulating layer includes a buffer layer.

The anti-reflection film includes a dummy semiconductor pattern formed on the first insulating film except for a portion corresponding to the pixel electrode to be electrically separated from the semiconductor layer, and prevents reflection by the substrate. The antireflection film and the semiconductor layer are selected from an amorphous silicon film and a polysilicon film.

The anti-reflection film is formed on the entire surface of the substrate except for a portion corresponding to the pixel electrode, and includes a dummy semiconductor layer having an opening for electrically separating the semiconductor layer, wherein the anti-reflection film prevents reflection by the substrate. It plays a role.

The method of manufacturing the display device may include forming a pixel electrode connected to one of the source / drain electrodes of the thin film transistor as a lower electrode; Forming a pixel separation layer having an opening exposing a portion of the lower electrode; Forming an organic layer on the lower electrode in the opening; Forming an upper electrode on the front surface of the substrate.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a plan view of a flexible organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the flexible organic light emitting display device of the present invention includes a substrate 200 made of metal foil. The gate line 110, the data line 120, and the power line 130 are arranged on the substrate 200. In the substrate 200, the pixels 150 are arranged in the pixel region 140 defined by the gate line 110, the data line 120, and the power line.

The pixel 150 arranged in the pixel region 140 includes an organic light emitting diode (EL device) including two thin film transistors 160, 180, a capacitor 170, and a pixel electrode 260. One of the two thin film transistors 160 and 180 is the switching thin film transistor 160, and the other is the driving thin film transistor 180.

The switching thin film transistor 160 is to transfer the data signal of the data line 120 according to the scan signal of the gate line 110, and is connected to the gate 163 to the gate line 110, and has a source electrode ( The 165 is connected to the data line 120, and the drain electrode 167 is connected to the lower electrode 127 of the capacitor 170. The source / drain electrodes 165 and 167 of the switching thin film transistor 160 may have source / drain regions of the semiconductor layer 161 through respective contact holes 164 and 166 (not shown). Is connected to.

The driving thin film transistor 180 is for driving an EL element according to a data signal transmitted through the switching thin film transistor 160, and a gate 225 is connected to the lower electrode 127 of the capacitor 170. The source electrode 241 is connected to the power supply line 130, and the drain electrode 245 is connected to the pixel electrode 260 which is an anode electrode of the EL element. The source / drain electrodes 241 and 245 of the driving thin film transistor 180 are source / drain regions 211 and 215 of the semiconductor layer 210 through respective contact holes 231 and 235. Is connected to.

The capacitor 170 is for storing a data signal transmitted through the switching thin film transistor 160, and the lower electrode 227 is a drain electrode 167 of the switching thin film transistor 160 through the contact hole 168. ), The upper electrode 247 is connected to the power line 130.

In the organic light emitting display device according to an exemplary embodiment of the present invention, a dummy semiconductor pattern is formed on a portion of the substrate 200 except a portion in which the semiconductor layers 161 and 210 are not formed and a portion corresponding to the opening 275 of the pixel electrode 260. 191 and 195 are formed. The dummy semiconductor patterns 191 and 195 are made of the same material as the semiconductor layers 161 and 210 of the thin film transistors 160 and 180.

In the exemplary embodiment of the present invention, a polysilicon film or an amorphous silicon film is used as the semiconductor layers 161 and 210 and the dummy semiconductor patterns 191 and 195 of the thin film transistors 160 and 180. The polysilicon layer or amorphous silicon layer constituting the derby semiconductor patterns 191 and 195 has a low reflectance during the LTPS process. Therefore, the dummy semiconductor patterns 191 and 195 serve as antireflection films that lower reflections from the substrate. In this case, since the dummy semiconductor patterns 191 and 195 serve as anti-reflection films for preventing reflection of the substrate, the dummy semiconductor patterns 191 and 195 are separated from the thin film transistors 160, 180, capacitors, and the EL element without being electrically connected. It has an independent pattern structure.

2 is a cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention. FIG. 2 is a cross-sectional view of an organic light emitting display device taken along the line I-I of FIG. 1, and is limited to the driving thin film transistor 180, the capacitor 170, and the EL element.

Referring to FIG. 2, a method of manufacturing the organic light emitting display device according to the present invention will be described.

First, the first insulating film 205 is formed on the substrate 200 made of metal foil. The first insulating layer 205 includes a buffer layer. A polysilicon film is formed on the buffer layer 205 and then patterned to form a semiconductor layer of the driving thin film transistor 180. An amorphous silicon film may be used as the semiconductor layer 210 instead of the polysilicon film.

In addition, the dummy semiconductor layers 191 and 195 are simultaneously formed when the amorphous silicon film or the polysilicon film for forming the semiconductor layer 210 is patterned. The non-semiconductor patterns 191 and 195 are anti-reflection films for preventing reflection by the substrate 200 and are electrically separated from the semiconductor layer 210 and formed on the buffer layer 205.

A gate insulating film 220 is formed on the substrate as a second insulating film, a gate electrode material is deposited on the gate insulating film 220, and then patterned to form a gate 225 on the semiconductor layer 210. The lower electrode 227 of the capacitor 170 is formed on the dummy semiconductor pattern 191.

Source / drain regions 211 and 215 may be formed in the semiconductor layer 210 by implanting a predetermined conductivity type, for example, a p-type conductivity, into the semiconductor layer 210. A contact hole exposing a portion of the source / drain regions 211 and 215 by forming an interlayer insulating film 230 as a third insulating film on the substrate and etching the gate insulating film 220 and the interlayer insulating film 230. 231 and 235 are formed.

A source / drain electrode material is deposited on the substrate and then patterned to be connected to the source / drain regions 211 and 215 of the semiconductor layer 210 through the contact holes 231 and 235. Electrodes 241 and 245 are formed. When forming the source / drain electrodes 241 and 245, an upper electrode 247 of the capacitor 170 is formed on the lower electrode 227.

A protective film 250 is deposited on the substrate as a fourth insulating film, and then a via hole 255 is formed to expose one of the source / drain electrodes 241 and 245, for example, a part of the drain electrode 245. . A pixel electrode material is deposited on the substrate and then patterned to form an anode electrode 260, which is a pixel electrode connected to the drain electrode 245 through the via hole 255.

A pixel isolation layer 270 is formed as a fifth insulating layer on the substrate, and then an opening 275 exposing a portion of the pixel electrode 260 is formed. The organic layer 280 is formed on the anode 260 in the opening 275, and the cathode 290 is formed on the entire surface of the substrate. The organic layer 280 may include an organic layer selected from an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, and a hole suppression layer.

Since the organic light emitting diode display according to the exemplary embodiment has a top light emitting structure, the anode electrode 260 includes a transparent electrode made of a transparent conductive film having a reflective film (not shown). The cathode electrode 290 includes a transmission electrode.

The dummy semiconductor pattern according to the exemplary embodiment of the present invention is not limited to a position as shown in FIGS. 1 and 2, but a portion except for a portion where light is emitted from an organic light emitting element, that is, the anode electrode 260 All of the pattern structures formed to be electrically separated from the semiconductor layers 161 and 210 at portions except portions corresponding to the openings of the semiconductor layers 161 and 210 may be formed.

3 is a plan view of a flexible organic light emitting display device according to another exemplary embodiment of the present invention. A planar structure of an organic light emitting display device according to another embodiment of the present invention has the same structure as the organic light emitting display device shown in FIG. 1. However, only the structure in which the dummy semiconductor pattern is formed on the front surface of the substrate to be electrically separated from the semiconductor layer of the thin film transistor is different.

Referring to FIG. 3, an organic light emitting display device according to another embodiment of the present invention includes a substrate 400 made of metal foil. A gate line 310, a data line 320, and a power line 330 are arranged on the substrate 400, and are defined by the gate line 310, the data line 320, and the power line 330. The pixel 350 is arranged in the pixel area 340.

The pixel 350 includes an organic light emitting diode including a switching thin film transistor 360, a capacitor 370, a driving thin film transistor 380, and a pixel electrode 460. The switching thin film transistor 360 includes a gate electrode 363 connected to the gate line 310, a source / drain region (not shown) and contact holes 364 and 366 formed in the semiconductor layer 361. Source / drain electrodes 365 and 367 are electrically connected to each other. The source electrode 365 is connected to the data line 320.

The capacitor 370 is arranged to overlap the lower electrode 427 and the lower electrode 427 electrically connected to the drain electrode 367 and the contact hole 368 of the switching thin film transistor 360. An upper electrode 447 is connected to the power line 330.

The driving thin film transistor 380 includes a gate 425 connected to the lower electrode of the capacitor 370, source / drain regions 411, 415, and contact holes 431, ( Source electrodes 441 and 445 connected through the 435. The source electrode 441 is connected to the power line 330.

The organic light emitting diode includes an anode electrode 460 which is a pixel electrode connected to a drain electrode 445 of the driving thin film transistor 380 through a via hole 455, and an organic layer formed in an opening of the anode electrode 460. 480 and a cathode electrode 490 are provided.

In the organic light emitting display device according to another embodiment of the present invention, a dummy semiconductor layer 390 is formed over the entire surface of the substrate. The dummy semiconductor layer 390 includes the semiconductor layer 361 of the switching thin film transistor 360, the semiconductor layer 410 of the driving thin film transistor 380, and the opening 475 of the anode electrode 460 of the organic light emitting diode. It is formed on the front of the substrate except for.

In this case, since the dummy semiconductor layer 390 should be electrically separated from the semiconductor layers 361 and 410, the openings 391 and 393 may be formed in portions corresponding to the semiconductor layers 361 and 410. It is provided. In addition, the dummy semiconductor layer 390 also includes an opening 395 in a portion corresponding to the opening 475 of the anode electrode 460.

4 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention. FIG. 4 is a cross-sectional view taken along the line III-III of FIG. 3 and is limited to the driving thin film transistor, the capacitor, and the organic light emitting device.

Referring to FIG. 4, an organic light emitting display device according to another exemplary embodiment includes a substrate 400 made of metal foil. A buffer layer 405 is formed on the substrate 400 as a first insulating layer. The semiconductor layer 410 and the dummy semiconductor layer 390 of the driving thin film transistor 380 are formed on the buffer layer 405. The semiconductor layer 410 includes source / drain regions 411 and 415 doped with a predetermined conductivity type, for example, p-type impurities. The dummy semiconductor layer 390 serves as an antireflection layer that prevents reflection by the substrate 400 made of metal foil.

In this case, the dummy semiconductor layer 390 includes an opening 393 for electrical separation from the semiconductor layer 390 and an opening 395 in a portion corresponding to the lower portion of the anode electrode to be formed in a subsequent process. In addition, as illustrated in FIG. 3, the semiconductor layer 390 further includes an opening 391 for electrical separation from the semiconductor layer 363 of the switching thin film transistor 360.

The semiconductor layer 410 and the dummy semiconductor layer 390 are made of the same material and include a polysilicon film or an amorphous silicon film. In the method of forming the semiconductor layer 410 and the dummy semiconductor layer 390, for example, a polysilicon layer 390 is formed on a substrate, and then the semiconductor layer 410 is separated by the opening 393. The polysilicon film 390 is patterned such that an opening is formed in a portion corresponding to the anode electrode. Therefore, the semiconductor layer 410 serves as an active layer of the driving thin film transistor, and the polysilicon film serves as an antireflection film as a dummy semiconductor layer.

A gate insulating film 420 is formed on the substrate as a second insulating film, and a gate 425 of the driving thin film transistor 380 is formed in a portion of the gate insulating film 420 corresponding to the semiconductor layer 410. The lower electrode 427 of the capacitor 370 is formed away from the gate 425.

An interlayer insulating film 430 is formed on the substrate as a third insulating film, and the gate insulating film 420 and the interlayer insulating film 430 expose source / drain regions 411 and 415 of the semiconductor layer 410. Contact holes 431 and 435 are formed.

Source / drain electrodes 441 are in electrical contact with the source / drain regions 411 and 415 of the semiconductor layer 410 through the contact holes 431 and 435 on the interlayer insulating layer 430. , 445 is formed. A protective film 450 having a via hole 455 exposing one of the source / drain electrodes 441 and 445, for example, the drain electrode 445, is formed on the substrate as a fourth insulating film.

An anode electrode 460, which is a pixel electrode connected to the drain electrode 445 of the driving thin film transistor 380, is formed on the passivation layer 450 through the via hole 455. A pixel isolation film 470 having an opening 475 exposing a portion of the anode electrode 460 on the substrate is formed as a fifth insulating film.

It is formed on the anode 460 in the opening 475, and the cathode 490 is formed on the front surface of the substrate. The organic layer 480 may include an organic layer selected from a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a hole suppression layer. The cathode electrode 490 includes a transmission electrode.

Since the organic light emitting display device according to another exemplary embodiment of the present invention has a top light emitting structure, the anode electrode 460 includes a transparent electrode made of a transparent conductive film having a reflective film (not shown). The cathode electrode 490 includes a transmission electrode.

The present invention provides a flat panel display device that uses a thin film transistor as a switching device for driving a pixel electrode of a display device and uses a flexible substrate such as a metal foil as a substrate. It is also applicable to preventing reflection.

Although the pixel of the organic light emitting display device according to an exemplary embodiment of the present invention includes one switching thin film transistor, one driving thin film transistor, a capacitor, and an organic light emitting diode, the pixel is not necessarily limited thereto. Applicable to the pixel.

The embodiment of the present invention is not limited to the organic light emitting display device having the cross-sectional structure as shown in FIGS. 2 and 4, but is applicable to the organic light emitting display device having various structures.

The present invention provides a flat panel display device that uses a thin film transistor as a switching element for driving a pixel electrode of a display element and uses a flexible substrate such as a metal foil as a substrate, wherein a dummy pattern made of the same material as a semiconductor layer is formed to form an antireflection film. All are applicable to the structure used.

The organic light emitting display device according to the embodiment of the present invention as described above can form a dummy semiconductor pattern electrically separated from the semiconductor layer of the thin film transistor as an antireflection film to prevent reflection by the substrate to improve contrast. In addition, by forming a dummy semiconductor pattern at the same time forming the semiconductor layer of the thin film transistor, there is an advantage that the anti-reflection film can be formed without a separate process.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (19)

A substrate; A thin film transistor having a semiconductor layer, a gate, and a source / drain electrode formed on the substrate; A display element having a pixel electrode connected to the thin film transistor; And a plurality of dummy patterns electrically separated from the semiconductor layer on a substrate except for a portion corresponding to the pixel electrode. The display device of claim 1, wherein the dummy pattern is formed of the same material as the semiconductor layer. The flat panel display of claim 1 or 2, wherein the semiconductor layer and the dummy pattern are selected from an amorphous silicon film and a polysilicon film. The method of claim 1, wherein the substrate comprises a flexible substrate of metal foil, And an insulating film formed between the substrate, the semiconductor layer, and the dummy pattern. The flat panel display of claim 1 or 4, wherein the dummy pattern serves as an antireflection film for preventing reflection of a substrate. The display device of claim 1, wherein the display device comprises: The pixel electrode serving as a lower electrode; A pixel separation layer having an opening exposing a portion of the pixel electrode; An organic layer formed in the opening of the pixel separation layer; And an organic light emitting device having an upper electrode formed on a substrate. A substrate; A thin film transistor having a semiconductor layer, a gate, and a source / drain electrode formed on the substrate; A display element having a pixel electrode connected to the thin film transistor; A dummy semiconductor layer formed on the substrate so as to be electrically separated from the semiconductor layer; And the dummy semiconductor layer includes a first opening formed in a portion corresponding to the pixel electrode, and a second opening for electrically separating the semiconductor layer. The display device of claim 7, wherein the dummy semiconductor layer is formed of the same material as the semiconductor layer. The flat panel display of claim 7 or 8, wherein the semiconductor layer and the dummy pattern are selected from an amorphous silicon film and a polysilicon film. The method of claim 7, wherein the substrate comprises a flexible substrate of metal foil, And an insulating film formed between the substrate, the semiconductor layer, and the dummy semiconductor layer. The flat panel display of claim 7 or 10, wherein the dummy semiconductor layer serves as an anti-reflection film for preventing reflection of a substrate. The display device of claim 7, wherein the display device comprises: The pixel electrode serving as a lower electrode; A pixel separation layer having an opening exposing a portion of the lower electrode; An organic layer formed in the opening of the pixel separation layer; And an organic light emitting device having an upper electrode formed on a substrate. Forming a first insulating film on the substrate; Simultaneously forming a semiconductor layer and an anti-reflection film; Forming a thin film transistor having a gate electrode, a source / drain region formed on the semiconductor layer, and a source / drain electrode connected to the source / drain region on a substrate; Forming a second insulating film having a via hole exposing one of the source / drain electrodes of the thin film transistor on a substrate; And forming a display device on the second insulating layer, the display device including a pixel electrode connected to one of the source / drain electrodes of the thin film transistor. The method of claim 13, wherein the substrate comprises a flexible substrate made of metal foil, and the first insulating layer includes a buffer layer. The semiconductor device of claim 13, wherein the anti-reflection film comprises a dummy semiconductor pattern formed on the first insulating film except for a portion corresponding to the pixel electrode so as to be electrically separated from the semiconductor layer. And a method for preventing reflection by the substrate. The method of manufacturing a flat panel display device according to claim 13 or 15, wherein the anti-reflection film and the semiconductor layer are selected from an amorphous silicon film and a polysilicon film. The semiconductor device of claim 13, wherein the anti-reflection film comprises a dummy semiconductor layer formed on the entire surface of the substrate except for a portion corresponding to the pixel electrode, and having an opening for electrically separating the semiconductor layer. And the anti-reflection film serves to prevent reflection by a substrate. The method of manufacturing a flat panel display device according to claim 13 or 17, wherein the antireflection film and the semiconductor layer are selected from an amorphous silicon film and a polysilicon film. The method of claim 13, wherein the display device is manufactured. Forming a pixel electrode connected to one of the source / drain electrodes of the thin film transistor as a lower electrode; Forming a pixel separation layer having an opening exposing a portion of the lower electrode; Forming an organic layer on the lower electrode in the opening; And forming an upper electrode on the front surface of the substrate.

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