KR100666095B1 - Semiconductor ovenlized temperature compensated crystal oscillator - Google Patents

Abstract

The temperature compensated crystal oscillator (SOTCXO) using the semiconductor heating element according to the present invention utilizes the self-heating of the IC provided to compensate for the temperature characteristic of the crystal oscillation piece 9, and separates the heating IC from the IC. Implement on the same chip to form a one-chip IC (10), and close the crystal oscillation piece (9) and the one-chip IC (10) within a predetermined interval to form a small thermostat to satisfy the small size, low power, high frequency stability There is an effect that can implement a crystal oscillator.

In addition, the SOTCXO according to the present invention improves the frequency stability of the TCXO by more than 100 times, indicating high frequency stability of the existing OCXO level, and can replace the OCXO used as a reference frequency source for communication instrumentation, communication base station, repeater, and GPS. The physical size and power consumption are reduced to the TCXO level, so the precise stable frequency of various wireless devices such as mobile phones, wireless handheld terminals, PDAs, mobile devices, WLAN, Bluetooth, home networks, portable game consoles, unmanned toll collectors on highways, etc. It has the effect of replacing TCXO used as a source.

In addition, the semiconductor heating element through the temperature control of the semiconductor section proposed in the present invention may be utilized as the base technology of the MEMS (Micro Electro Mechanical Systems) product by realizing the design and manufacture of the micro-temperature chamber.

Oscillator, Crystal Oscillator, Constant Temperature Crystal Oscillator, TCXO, OCXO

Description

Temperature-compensated crystal oscillator using semiconductor heating element {SEMICONDUCTOR OVENLIZED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR}

1 is a block diagram of a temperature compensation crystal oscillator using a semiconductor heating element according to the present invention;

2 is a block diagram schematically illustrating a circuit operation of a one-chip IC as an embodiment of the present invention;

3A and 3B are a cross-sectional side view and a plan view of a temperature compensation crystal oscillator using a semiconductor heating element according to the present invention;

Figure 3c is a side cross-sectional view showing that the lead is coupled to the upper side of the crystal oscillator of Figure 3a,

4 is a schematic plan view and a side view schematically showing a multilayer structure constituting the crystal oscillator of the present invention;

5 is an exploded perspective view schematically showing that each component is inserted into the package as an embodiment of the present invention;

<Brief description of the major symbols in the drawings>

1: Layer 1 2: Layer 2

3: Layer 3 4: Layer 4

5, 6: bump 7: test contacts

8: Lead 9: Crystal Oscillation

10: One-chip IC 11: Package

20: memory 30: temperature compensator

40: heating element 50: heating control circuit

51: temperature sensor 52: reference temperature generator

53: PI controller 54: active area operation decision circuit

55: program setting circuit 56: capacitor array switch

57: main capacitor array 58: voltage stabilization circuit

60: auxiliary adjustment circuit 61: A / D converter

62: microcontroller 63: auxiliary capacitor array

70: oscillator circuit

The present invention relates to a temperature compensated crystal oscillator using a quartz crystal oscillation, in particular an IC provided to compensate for the temperature characteristics of the quartz crystal oscillation, and a separate heat generating IC on the same chip (one chip IC), the crystal The present invention relates to a temperature compensated crystal oscillator using a semiconductor heating element whose temperature characteristics are compensated by forming an ultra-small thermostat with adjacent vibrating pieces and one-chip ICs within a predetermined interval.

In general, a crystal oscillator using a crystal oscillator is an essential component for generating an oscillation frequency to control the transmission and reception of a signal of a mobile communication terminal.

However, the crystal oscillator had a temperature characteristic in which the oscillation frequency was changed according to the ambient temperature, and a product developed to compensate for the frequency variation according to the temperature characteristic was a temperature compensated crystal oscillator (hereinafter referred to as 'TCXO'). Is called).

The TCXO includes a temperature compensation circuit for controlling temperature characteristics. The temperature compensation circuit (not shown) generally includes a temperature detection circuit (not shown) using a resistance value change of the thermistor, and A control voltage generation circuit (not shown) for controlling the voltage by the change, and a frequency adjustment circuit (not shown) for adjusting the frequency by adjusting the capacitance value with the controlled voltage. Each of the circuits is known in the art, so detailed description thereof will be omitted below.

Since the TCXO generates a stable oscillation frequency by compensating for temperature characteristics, the precision stable frequency of various wireless devices such as mobile phones, wireless handheld terminals, PDAs, mobile devices, WLANs, Bluetooth, home networks, portable game consoles, unmanned toll collectors on highways, etc. It is used as a circle.

However, since the TCXO operates at room temperature, the frequency stability is poor and the phase noise characteristics are poor. Therefore, the TCXO is difficult to be applied to high-tech products requiring more precision. In particular, two-way multimedia wireless video based on high quality video is required. In the IT environment, which inevitably requires high-precision frequency stability such as communication, it has encountered limitations of its use.

On the other hand, the product with improved frequency stability and phase noise characteristics compared to the TCXO is OCXO (Oven Controlled Crystal Oscillators) is a room temperature constant temperature crystal oscillator.

The OCXO shows a more stable frequency stability by making a thermostat for maintaining a constant temperature higher than the ambient temperature and placing the quartz crystal vibrating element therein.

At this time, as a heating element to increase the temperature of the thermostat, it is made to withstand a high temperature such as nichrome wire and heats by flowing a current through a metal wire having a high electrical resistance, but recently, it is simply applied to the inner surface of the thermostat in the form of paint. Newly developed heating materials such as heating paint that press and paste in the shape of a gum and flow an electric current on its surface.

However, the heating elements of the OCXO are larger and larger power than the semiconductor elements, and the temperature control is not precise. Therefore, the OCXO is a portable electronic device (mobile phone, etc.) requiring power consumption of several kilowatts or less. There was an unsuitable problem in a multimedia device.

The present invention has been made to solve the above problems, and utilizes the heat generated by the IC for the compensation of the temperature characteristics of the crystal vibration piece provided in the TCXO, and at the same time, a separate heating-only IC the same as the IC It is an object of the present invention to provide a temperature compensation crystal oscillator using a semiconductor heating element formed on a chip to form a one-chip IC, and adjacent to the crystal oscillation piece and the one-chip IC at a predetermined interval to form an ultra-small thermostat.

In a semiconductor integrated IC, heat is generated from itself, so reducing or dissipating the generated heat to the outside is an important factor in the integration of a circuit. The present invention proposes a method of utilizing the heat generated by the IC in reverse, and additionally, a dedicated IC (hereinafter, referred to as a 'heating IC') for heat generation is separately manufactured as a one-chip IC, and the one-chip IC and the crystal vibration piece are packaged inside the package. There is a technical feature in mounting to form a thermostat of a very small oven (Oven) method.

In order to achieve the above technical problem, a temperature compensation crystal oscillator using a semiconductor heating device according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram of a temperature compensation crystal oscillator using a semiconductor heating device according to the present invention. FIG. 2 is a block diagram schematically illustrating a circuit operation of a one-chip IC as an embodiment of the present invention. 3b is a side cross-sectional view and a plan view of a temperature compensated crystal oscillator using a semiconductor heating element according to the present invention. FIG. 3c is a side cross-sectional view showing a lead coupled to an upper side of the crystal oscillator of FIG. 3a, and FIG. A schematic plan view and a side view schematically illustrating a multilayer structure constituting the crystal oscillator of the present invention, Figure 5 is an exploded perspective view schematically showing that each component is inserted into the package as an embodiment of the present invention.

The semiconductor Ovenlized Temperature Compensated Crystal Oscillator (hereinafter referred to as SOTCXO) using a semiconductor heating element according to the present invention is an electrical signal by physical vibration by a voltage as shown in FIG. Crystal vibration piece (9) which is a piezo material generated; A memory 20 for data input, a temperature compensator 30 for inputting a temperature characteristic of the quartz crystal vibration element 9 in advance and compensating for the temperature, and a space in which the quartz crystal vibration element 9 is located A one-chip IC 10 having integrally implemented a heating element unit 40 for supplying heat to maintain a constant temperature; It consists of a package 11 for hermetically insulating the crystal vibration piece 9 and the one-chip IC 10 from the outside.

The crystal vibrating element 9 causes a physical vibration at a predetermined cycle when a predetermined current flows due to piezoelectric phenomenon, and generates (oscillates) a certain electrical signal by the vibration, and forms a vibrating piece according to a change in ambient temperature. Since the crystal structure of the crystal is changed, and thus the vibration characteristics and oscillation frequency are changed, it is necessary to predict and compensate for this change in order to obtain a constant frequency regardless of the temperature change.

To this end, in the present invention, the inside of the thermostat (package) in which the quartz crystal vibration piece 9 is mounted is maintained at a temperature higher than the ambient temperature so that the quartz crystal vibration piece 9 is not affected by the ambient temperature change.

On the other hand, the one-chip IC 10 is an IC for compensating the temperature characteristics of the quartz crystal vibration element 9 for removing the vibration deviation of the quartz crystal vibration element according to the temperature change in the conventional TCXO, and the portion responsible for the heat generation in the existing OCXO Is implemented as a separate heating IC and designed on the same chip.

In this case, the quartz crystal vibration piece 9 and the one-chip IC 10 are mounted in the package 11 in a state adjacent to each other at a small interval so that the package 11 unifies the quartz crystal vibration piece with temperature compensation and a heat generating chip. The microchip thermostat is formed by the one-chip IC 10.

In addition, the temperature compensation unit 30 receives the characteristic data of the crystal oscillation element 9 corresponding to the current temperature input in advance from the memory 20 and starts the oscillation control according to the temperature characteristic. The same operation as the temperature compensation circuit of the TCXO, which is a conventional temperature compensation crystal oscillator, will be described in detail in the circuit operation description of the one-chip IC 10 shown in FIG. 2.

In addition, the heat generating element unit 40 is made of any one or more of a semiconductor junction (junction), a semiconductor heat generating resistor (Resistive Junction), or MOS (Metal-Oxide Semiconductor), and generates heat by the heat generating control circuit 50. By controlling the supply current of the element portion 40, the degree of heat generation can be adjusted.

In one embodiment of the present invention, the semiconductor junction is made of a PN junction in which a P-type semiconductor and an N-type semiconductor are bonded. Other bipolar junction transistors using PNP and NPN junctions may be used.

Since the potential of the semiconductor barrier is formed by the semiconductor constituent material and the added impurities, the potential barrier maintains a constant voltage when a current flows through the potential barrier during normal operation, and the voltage of the potential barrier and the potential barrier are maintained. An electric current flowing through the PN junction causes a potential difference.

At this time, the temperature change caused by the external heating circuit represents the 'temperature-voltage voltage characteristic' which gives the change of the tension voltage. In other words, by using the characteristic that the tension voltage goes down when the temperature rises and the tension voltage goes up when the temperature falls, the heat generation state or temperature of the tension can be measured by precisely observing the tension voltage.

In the present invention, the temperature of the semiconductor junction is detected by using the characteristics of the above-described 'temperature-voltage', and the heating temperature of the semiconductor junction is controlled by precisely detecting the tension voltage and controlling it to maintain a constant size. . That is, the heating element unit 40 maintains the thermostat at a constant temperature by the feedback control of the heating control circuit 50.

As another embodiment of the present invention, the heat generating element part 40 may be formed of a separate semiconductor heat generating resistor, and the amount of heat generated may be controlled by adjusting the amount of current supplied to the semiconductor heat generating resistor. .

At this time, the amount of current flowing through the semiconductor heat generating resistor may be adjusted by applying a pulse width modulated signal, or an analog method of controlling the amount of heat generated by changing the voltage across both ends by adjusting the current flowing through the resistor. Controllable using.

As another embodiment of the present invention, the heat generating device unit 40 is composed of a metal-oxide semiconductor (MOS) device, and may control the amount of heat generated by adjusting the gate voltage of the MOS device.

That is, when the gate voltage is adjusted while the voltage between the drain and the source of the MOS device is constantly applied, the drain current changes. The magnitude of the drain current increases in proportion to the square of the gate-source voltage minus the threshold voltage of the MOS. At this time, the product of the drain current and the drain-source voltage is the power consumed by the MOS. Therefore, it is also possible to use a method of adjusting the amount of heat generated by simply placing a MOS of a suitable size in a desired position of heat generation and simply adjusting its gate voltage.

Therefore, when power is applied to the one-chip IC 10, the heating element unit 40 generates heat until the temperature inside the thermostat becomes a set temperature by the supplied current, and when the set temperature reaches the set temperature, the heating control circuit Maintaining the set temperature of the thermostat by controlling the current supplied to the semiconductor junction by 50 to reduce the amount of heat generated.

That is, the heating control circuit 50 controls the heating element unit 40 so as to maintain a constant temperature higher than the normal temperature regardless of the external temperature change to precisely control the oscillation frequency of the crystal oscillation piece 9 regardless of the ambient temperature. To be maintained.

Hereinafter, the operation of the one-chip IC 10 will be described in more detail with reference to the block diagram shown in FIG.

The one-chip IC 10 according to the present invention includes a temperature sensor 51 in which an output voltage changes according to a temperature change, and a reference temperature generator 52 for maintaining a constant constant voltage despite a change in external temperature. And a PI controller 53 for comparing the temperature sensed by the temperature sensor 51 with a reference temperature and integrating the difference to output the integrated temperature.

At this time, the amount of heat generated by the heating element unit 40 is controlled in accordance with the output of the PI controller 53, the output of the PI controller 53 is transmitted to the temperature compensation unit 30 and the auxiliary adjustment circuit 60 to modify The oscillation frequency of the vibrating piece 9 is controlled to be kept constant.

The temperature compensator 30 includes an active region operation circuit 54, a program setting circuit 55, a capacitor array switch 56, a main capacitor array 57, and the like implemented in a conventional TCXO IC to be described later.

That is, in a state where the temperature is very low, the output voltage of the PI controller 53 is saturated toward + (or-). In this saturation state, the heat generating element unit 40 generates heat to the maximum size. When the temperature of the one-chip IC 10 reaches the set temperature, the output of the PI controller 53 is released from the saturation state and is normal. The control mode is entered. This is because the operational amplifier constituting the PI controller 53 has a very large gain, so that the difference of very small input signals is amplified greatly, while the change in the output voltage of the operational amplifier can only exist in a region lower than the power supply voltage. It is a phenomenon.

At this time, in the Active Operation Decision Circuit 54, if it is determined that the PI controller 53 is in the normal control mode, the program setting circuit 55 is operated to normalize the quartz crystal vibration piece 9 The operating frequency is set.

The active area operation determination circuit 54 and the program setting circuit 55 are the main operation functions of the TCXO IC. In the present invention, the circuits 54 and 55, the temperature sensor 51 and the reference temperature generator ( 52) and the heat generating control circuit 50 to compensate for the temperature characteristics of the quartz crystal vibration element 9 including heat generating control components such as the PI controller 53.

In general, even though the TCXO is adjusted to oscillate at a constant frequency while resonating the quartz crystal oscillation 9 from the outside using a network analyzer, the frequency characteristics are different depending on the set temperature. .

In order to compensate for this, the present invention uses a main capacitor array (57) implemented in the one-chip IC 10 to adjust the frequency depending on the characteristic change of the quartz crystal vibrating element 9 according to the temperature change. By doing so, the resonance frequency of the crystal oscillation piece 9 is program-set to a constant value.

The normal control mode is established when the output of the operational amplifier is out of saturation and enters the normal operating range. In this case, the heating element unit 40 generates heat in proportion to the output voltage of the operational amplifier. The amount of heat is inversely proportional to the outside temperature. That is, the magnitude of the output voltage of the operational amplifier changes in inverse proportion to the external temperature.

Therefore, in the process of initially setting the oscillation frequency, the one-chip IC 10 and the crystal oscillation piece 9 should be made in the state of entering the thermostat. In other words, the output voltage of the operational amplifier changes as the temperature of the thermostat is adjusted, and the program setting circuit 55 operates while the output voltage of the varying operational amplifier reaches a predetermined potential to operate the main capacitor array 57. By adjusting), the resonance frequency is set constant. In this process, the circuit for determining whether the output voltage of the operational amplifier reaches a predetermined potential is the role of the active region operation determination circuit 54.

In addition, the program setting is given externally as digital data (Control Data), and the oscillation frequency is adjusted while changing the main capacitor array 57 listed in multiples of two using the capacitor switch array 56 in the TCXO chip portion. . That is, the program setting circuit 55 changes the main capacitor array 57 from the outside and makes a judgment while accurately measuring the resonance frequency, and sequentially from MSB to LSB depending on whether it is higher or lower than the frequency to be set. The decision is made. After the final decision is made in this way, the final data is stored in a ROM (not shown) inside the one-chip IC 10 to fix the center frequency.

The method of adjusting the oscillation frequency can be adjusted by a method similar to the successive approximation method, which is one of the algorithms used in the conventional AD converter design.

In other words, initially connect half of the total capacitance and judge whether the oscillation frequency is higher or lower than the set frequency.If high, connect half of the capacitance as it is and leave half of the other half of the capacitance additionally. Judging again when the capacitance of 4 is connected, but if it is low, open the previous half of the capacitance again and connect only half of the remaining half of the capacitance, and then judge again with the total of 1/4 capacitance connected. Repeat the successive approximation method, but start with the most significant bit (MSB bit) and determine the least significant bit (LSB bit).

In this way, for example, adjustment is completed after ten judgments on digital data given by 10 bits.

On the other hand, even when controlling to keep the temperature of the chip constant by controlling the heat generating element unit 40 using the PI controller 53, a slight temperature deviation appears in accordance with the change in the external temperature.

For example, assuming that the temperature of the one-chip IC 10 has an error of about 1 degree around the set temperature when the external temperature changes by about 100 °, despite the small change, the oscillation circuit (Osc Circuit) 70 In order to maintain the frequency stability at 0.01 ppm or less, an auxiliary adjustment circuit 60 is required to keep the frequency constant.

To this end, the auxiliary adjustment circuit 60 must first detect a temperature deviation that changes around the set temperature, and uses the output of the PI controller 53 as a method.

That is, the digital controller converts the output of the PI controller 53 through the A / D converter 61 and then adjusts the value through the microcontroller (uC) 62 to adjust the subcap array 63. This makes it possible to control the oscillation frequency to be kept constant.

At this time, the method of determining the capacitance value of the auxiliary capacitor array 63 can be adjusted in a similar manner as mentioned above in the method of adjusting the primary capacitor array 57.

In order to operate the above-mentioned circuit blocks precisely, a precise power source that maintains a constant voltage is required in the one chip IC 10 despite an external temperature change or a change in power supply voltage. To this end, a voltage regulator 58 is added as a separate block.

Therefore, the one-chip IC 10 according to the present invention senses the temperature inside the chamber through the temperature sensor 51, and then controls the current of the semiconductor tension through the heating control circuit 50 to always maintain a constant temperature inside the chamber. The oscillation is started by applying an oscillation voltage to the crystal oscillation piece 9, and the oscillation of a precise and stable frequency is maintained through the filter circuit composed of the capacitor arrays 56, 57, and 63.

On the other hand, the temperature compensation crystal oscillator using the semiconductor heating element according to the present invention, as shown in Figures 3a to 3b, the first layer (1) forming a bump connection pattern, and the second layer (2) forming an adhesive portion ), The third layer 3 constituting the lead portion, and the fourth layer 4 constituting the cobaring as the heterogeneous bonding means form a multi-layer structure with a space formed at the center portion, and the first layer 1 On one side of) is provided with a plurality of test contact (7).

The one chip IC is tightly coupled to the upper surface of the first layer 1 by the bump 6, and the crystal oscillation piece 9 is tightly coupled to the upper surface of the second layer 2 by the bump 5. In addition, the one-chip IC and the crystal vibration piece 9 should be spaced apart from each other.

In addition, since the arrangement of the quartz crystal oscillation piece 9 and the one-chip IC 10 facilitates thermal circulation between the upper and lower layers while adjoining for smooth thermal circulation of the thermostatic chamber space, as an embodiment of the present invention, the quartz crystal vibration The piece 9 and the one-chip IC 10 propose to form a constant heat path by being spot-coupled to the corresponding layer by the bumps 5 and 6.

At this time, in order to keep the temperature distribution in the thermostat constant by the uniform diffusion of heat, the arrangement between the one-chip IC 10, the crystal oscillation piece 9, and the layers is preferably designed and arranged in consideration of the hydrodynamic characteristics.

In addition, as shown in FIG. 3C, the upper surface of the fourth layer 4 is again closely coupled to the lead 8 to connect and heat transfer electric and electronic inputs and outputs, including data input and output from the outside. By minimizing this, the inside thereof forms a package 11 forming a thermostat.

That is, as shown in FIG. 4, the second layers 2 to 4 having a space formed in the center portion thereof are sequentially stacked on the first layer 1, and the upper part of the first layer 1 is disposed. The circuit pattern is provided on the surface to mount the one chip IC 10. At this time, the M-1 is the lower surface of the first layer 1, M-2 is the lower surface of the second layer 2, M-3 is the lower surface of the third layer 3, M-4 means the lower surface of the fourth layer 4, and can be distinguished from each other by the plan views of FIGS. 3A and 4, and thus detailed drawings of the separated drawings will be omitted.

Therefore, as shown in FIG. 5, in a state in which the first layers 1 to 3 layers 3 are stacked, the one-chip IC 10 is mounted in a circuit pattern formed on the upper surface of the first layer 1. In addition, the quartz crystal vibrating element 9 is closely coupled to the second layer 2, and the barring as the heterogeneous adhesion means forming the fourth layer 4 is coupled, and the lead 8 is closely coupled to the upper layer. A temperature compensated crystal oscillator using a semiconductor heating element according to the present invention is manufactured.

The present invention accommodates the functions of TCXO, a temperature compensated crystal oscillator, and OCXO, a constant temperature crystal oscillator, and puts the entire part into a micro-temperature chamber composed of one-chip semiconductor heating elements, thereby improving the performance of the conventional room temperature crystal oscillator OCXO. In terms of physical size and power consumption, compared to TCXO, a temperature compensated crystal oscillator that is widely used in portable devices, frequency stability is maintained at a level of 100 times improved OCXO in the same environment.

Therefore, SOTCXO according to the present invention is similar in size and power consumption to room temperature TCXO, which is widely used at present, and its frequency stability and phase characteristics have the performance of OCXO, which is a conventional thermostat crystal oscillator OCXO and temperature compensation crystal The advantages of both types of oscillators, TCXOs, will be available.

1 to 5 as shown as an embodiment of the present invention, the scope of the present invention by each component is not limited, using alternative components or parts having the same similar function and effect All changes in the manner of operation is within the scope of the present invention.

The temperature compensated crystal oscillator (SOTCXO) using the semiconductor heating element according to the present invention utilizes the self-heating of the IC provided to compensate for the temperature characteristic of the crystal oscillation piece 9, and separates the heating IC from the IC. Implement on the same chip to form a one-chip IC (10), and close the crystal oscillation piece (9) and the one-chip IC (10) within a predetermined interval to form a small thermostat to satisfy the small size, low power, high frequency stability There is an effect that can implement a crystal oscillator.

In addition, the SOTCXO according to the present invention improves the frequency stability of the TCXO by more than 100 times, indicating high frequency stability of the existing OCXO level, and can replace the OCXO used as a reference frequency source for communication instrumentation, communication base station, repeater, and GPS. The physical size and power consumption are reduced to the TCXO level, so the precise stable frequency of various wireless devices such as mobile phones, wireless handheld terminals, PDAs, mobile devices, WLAN, Bluetooth, home networks, portable game consoles, unmanned toll collectors on highways, etc. It has the effect of replacing TCXO used as a source.

In addition, the semiconductor heating element through the temperature control of the semiconductor section proposed in the present invention may be utilized as the base technology of the MEMS (Micro Electro Mechanical Systems) product by realizing the design and manufacture of the micro-temperature chamber.

Claims (12)

In crystal oscillator, A crystal vibration piece which is a piezo material that generates an electrical signal by physically vibrating by voltage; A memory for data input, a temperature compensator for inputting a temperature characteristic of the quartz crystal oscillator in advance to compensate for the temperature, and a heating element unit for supplying heat to a space in which the quartz crystal vibration element is located to maintain a constant temperature; A one-chip IC integrally implemented with a heating control circuit for sensing a temperature of the semiconductor junction and controlling a supply current; Temperature-compensated crystal oscillator using a semiconductor heating element, characterized in that consisting of a package for separating the crystal vibration piece and the one-chip IC from the outside. The method of claim 1, The heating element unit is a temperature compensation crystal oscillator using a semiconductor heating element, characterized in that consisting of a heating element using a semiconductor junction (Junction) The method of claim 2, The semiconductor junction is a temperature using a semiconductor heating element, characterized in that composed of any one or more of a bipolar junction transistor using a PN junction, a PNP or an NPN junction in which a P-type semiconductor and an N-type semiconductor are bonded. Compensated Crystal Oscillator. The method of claim 1, The heating element unit is composed of a semiconductor heating resistance (Resistive Junction), the temperature compensation crystal oscillator using a semiconductor heating element, characterized in that for controlling the amount of heat generated by adjusting the amount of current supplied to the semiconductor heating resistance. The method of claim 1, The heating element is composed of a metal-oxide semiconductor (MOS) device, the temperature compensation crystal oscillator using a semiconductor heating element, characterized in that for controlling the amount of heat generated by adjusting the gate voltage of the MOS device. The method of claim 1, The heating control circuit A temperature sensor in which the output voltage changes with temperature change; A reference temperature generator for maintaining a constant constant voltage regardless of temperature change; A PI controller for comparing the temperature sensed by the temperature sensor with a reference temperature and integrating the difference to output the integrated temperature; A temperature compensation crystal oscillator using a semiconductor heating element, characterized in that it is composed of a voltage stabilization circuit that maintains a constant voltage at all times regardless of external temperature changes or fluctuations in power supply voltage. The method of claim 1, The temperature compensation unit An active area operation determination circuit that determines whether the PI controller of the heat generation control circuit is in a normal control mode; A program setting circuit for setting a normal operating frequency of the crystal oscillation piece; A main capacitor array for storing frequency data of the quartz crystal oscillator which changes with temperature; A capacitor array switch configured to change the oscillation frequency to a constant value by adjusting a value of the main capacitor array; A temperature compensation crystal oscillator using a semiconductor heating element, characterized in that it comprises an auxiliary adjustment circuit for maintaining the frequency stability. The method of claim 7, wherein The auxiliary adjustment circuit An A / D converter for converting the output of the PI controller into digital data; An auxiliary capacitor array for storing frequency data of the quartz crystal oscillator which changes according to an external temperature; Temperature-compensated crystal oscillator using a semiconductor heating element, characterized in that the microcontroller (uC) for adjusting the auxiliary capacitor array in accordance with the data value converted by the A / D converter. In crystal oscillator, The first layer forming the lower surface, the second layer forming the adhesive portion (2), the third layer forming the lead portion, and the fourth layer forming the heterogeneous bonding means is formed in a multi-layer structure sequentially A one-chip IC is mounted on the upper surface of the first layer by bumps; A quartz crystal vibration piece is tightly coupled to the upper surface of the second layer by bumps; A temperature compensation type crystal oscillator using a semiconductor heating element, characterized in that the package is sealed so that the lid is tightly coupled to the upper surface of the fourth layer to maintain the thermostat as a whole. The method of claim 9, Temperature compensation crystal oscillator using a semiconductor heating element, characterized in that the circuit pattern is provided on the upper surface of the first layer to mount the one-chip IC. The method of claim 9, The one-chip IC and the crystal oscillator is a temperature compensation crystal oscillator using a semiconductor heating element, characterized in that spaced apart. The method of claim 9, The crystal vibrating element and the one-chip IC is a temperature compensation crystal oscillator using a semiconductor heating element, characterized in that the spot coupled to the layer (bump) by a bump for a smooth heat circulation of the thermostat space to form a constant heat path.

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