KR100661746B1 - Apparatus for processing substrate using plasma - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of quickly and safely processing a large substrate by providing an object lifting member having the same electrical and thermal characteristics as the mounting table at the edge and the center region of the mounting table. .

The present invention provides a plasma processing apparatus for performing a predetermined treatment on an object to be processed by using a plasma, the apparatus comprising: an airtight treatment chamber capable of forming a vacuum atmosphere therein; A mounting table having a mounting surface mounted thereon; A plurality of workpiece lifting members formed through a predetermined portion of the mounting table and assisting in mounting the workpiece on the mounting surface; It includes, The workpiece lifting member is made of the same material as the mounting table, and provides a plasma processing apparatus characterized in that the ground.

Plasma, plasma processing device, mounting table, workpiece lifting member

Description

Apparatus for processing substrate using plasma}

1 is a cross-sectional view showing the structure of a conventional plasma processing apparatus.

2 is a plan view showing the arrangement of a conventional mounting table and a workpiece lifting member.

3 is a cross-sectional view showing the structure of a plasma processing apparatus according to an embodiment of the present invention.

4 is a plan view showing the arrangement of the mounting table and the workpiece lifting member according to the embodiment of the present invention.

5 is a cross-sectional view showing a coolant passage according to an embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

10, 110: airtight processing chamber 12: object to be processed

20, 120: mounting table 30, 130: workpiece lifting member

40, 140: gas supply system 50, 150: electric field generator

60, 160: exhaust system

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of quickly and safely processing a large substrate by providing an object lifting member having the same electrical and thermal characteristics as the mounting table at the edge and the center region of the mounting table. .

Generally, the plasma processing apparatus which performs a predetermined process with respect to a to-be-processed object using a plasma in vacuum atmosphere is used for the process of a to-be-processed object, such as a semiconductor and an LCD (LCD) substrate. The plasma processing apparatus is provided with a workpiece lifting member on a mounting table on which a workpiece is to be mounted to assist the operation of bringing the workpiece into the interior and carrying out the processed workpiece to the outside.

1 is a cross-sectional view showing the internal structure of a conventional plasma processing apparatus. Hereinafter, the structure of the plasma processing apparatus provided with the workpiece lifting member described above with reference to FIG. 1 will be described.

The plasma processing apparatus includes an airtight processing chamber 10 capable of forming an interior thereof in a vacuum atmosphere; A mounting table 20 provided in the airtight processing chamber 10 and having a mounting surface on which the object to be processed 12 is mounted; A workpiece lifting member 30 formed at a predetermined portion of the mounting table 20 to lift and lower the workpiece 12 mounted on the mounting table 20; A gas supply system 40 for supplying a processing gas to the hermetic processing chamber 10; An electric field generating system 50 for generating an electric field for plasmalizing the supplied processing gas; And an exhaust system 60 for discharging the processing gas after the processing of the object 12 or forming the inside of the airtight processing chamber 10 in a vacuum atmosphere.

First, the airtight processing chamber 10 has a structure capable of forming an atmosphere in the processing chamber by vacuum by blocking the inside of the processing chamber from the outside. In the airtight processing chamber 10, various components are provided for performing a predetermined process on the object to be processed 12.

First, a mounting table 20 on which a workpiece 12 is mounted is provided at a lower portion of the inside of the airtight treatment chamber 10, and a mounting surface in contact with the workpiece 12 on the upper surface of the mounting table 20. Not shown) is formed. The mounting surface is provided with a plurality of workpiece lifting members 30 at predetermined intervals in the edge region thereof. That is, the plurality of workpiece lifting members 30 pass through the plurality of through holes 22 formed through the mount 20 so as to support the edge of the workpiece 12 mounted on the mount 20. ), The workpiece lifting member 30 serves to lift the workpiece 12 or position the mount 20 while the workpiece lifting member 30 is raised and lowered along the through hole 22.

At this time, the workpiece lifting member 30 is provided with a plurality on one mounting table 20, a plurality of workpiece lifting member 30 should be raised or lowered at the same time. Accordingly, a lifting member coupling portion 32 coupled to the entire plurality of workpiece lifting members 30 is provided at the lower side of the mounting table 20, and the lifting members coupling portion 32 is raised and lowered to raise and lower the plurality of lifting targets. The workpiece lifting member 30 is raised and lowered at the same time.

Next, the plasma processing apparatus includes a gas supply system 40 for supplying a processing gas into the hermetic processing chamber 10, and the gas supply system 40 is configured to uniformly supply the processing gas into the hermetic processing chamber 10. Detailed components such as a diffuser plate, an upper showerhead, and a lower showerhead may be further provided therein.

In addition, an electric field generating system 50 for generating an electric field necessary for plasmalizing the process gas supplied by the gas supply system 40 is provided. The electric field generating system 50 generally includes an upper electrode and a lower electrode. In the plasma enhanced plasma processing apparatus, the mounting table 20 serves as a lower electrode, and the upper electrode serves as a gas supply system. Serve. At this time, the mounting table 20 serving as the lower electrode is grounded to the wall of the airtight processing chamber, and the high frequency power is applied to the upper electrode 50.

Next, a predetermined portion of the hermetic treatment chamber 10 is further provided with an exhaust system 60 for removing the processing gas and the by-products and the like already used for the treatment of the object 12. Of course, the exhaust system 60 is also used to exhaust the gas inside the hermetic chamber 10 in order to form the inside of the hermetic chamber 10 in a vacuum atmosphere.

In the case where the object 12 is brought into the above-described plasma processing apparatus, the object to be processed 12 is mounted on the mounting table 20 by a to-be-processed object conveying apparatus (not shown) provided outside the plasma processing apparatus. When it is conveyed to the upper part, the above-mentioned to-be-processed object elevating member 30 raises and lifts the to-be-processed object 12 which is placed in the to-be-processed object conveying apparatus, and the to-be-processed to-be-processed object conveying apparatus is outside the airtight processing chamber 10 I'm going. Then, while the workpiece lifting member 30 is lowered, the workpiece 12 is placed on the mounting surface on which the workpiece is to be placed in the mounting table 20.

And when carrying out the to-be-processed object 12, the to-be-processed object elevating member 30 is raised first, and the to-be-processed object 12 is lifted from the mounting table 20 by predetermined height. Then, when the workpiece carrying apparatus provided outside the airtight treatment chamber 10 enters the workpiece 12 below, the workpiece lifting member 30 is lowered to move the workpiece 12 to the workpiece. Pass it to. Then, the to-be-processed object conveying apparatus which handed over the to-be-processed object 12 carries out to-be-processed object 12 to the outside of the airtight processing chamber 10. FIG.

However, due to the difference in electrical and thermal characteristics between the other part of the mounting surface and the part in which the workpiece lifting member is provided, the degree of treatment of the surface of the workpiece 12 during plasma treatment is changed. That is, since all areas of the workpiece 12 are not treated uniformly, such as mura and unevenness appearing on the surface of the workpiece 12 after the plasma treatment, the target region of the mounting table 20 is treated. The water elevating member 30 is not provided, and as shown in FIG. 2, the object elevating member 30 is provided only at the edge of the mounting surface.

By the way, in recent years, the size of the to-be-processed object 12 processed by a plasma processing apparatus becomes large, and the magnitude | size may reach 3m each horizontally and vertically. Therefore, when lifting only the edge of the workpiece 12, the center portion of the workpiece 12 sags too low. Therefore, in order to carry out the processing object 12, the processing object conveying apparatus and the processing object 12 which enter into the airtight processing chamber 10 collide, or the processing object conveying apparatus scrapes a part of the processing object 12, There is a risk of damage.

Therefore, it is necessary to provide the above-described workpiece lifting member 30 in the central region of the mounting surface so as to support the central portion of the workpiece 12.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma processing apparatus capable of quickly and safely processing a large substrate by providing an object lifting member having the same electrical and thermal characteristics as the mounting table in all areas of the mounting table.

In order to achieve the above object, the present invention is a plasma processing apparatus for performing a predetermined treatment on the object to be processed by using a plasma, the airtight processing chamber capable of forming a vacuum atmosphere therein; installed in the airtight processing chamber A mounting table having a mounting surface on which the object is to be mounted; A plurality of workpiece lifting members formed through a predetermined portion of the mounting table and assisting in mounting the workpiece on the mounting surface; It includes, The workpiece lifting member is made of the same material as the mounting table, and provides a plasma processing apparatus characterized in that the ground.

Further, in the present invention, by forming a coolant passage inside the workpiece lifting member, and passing the coolant through the coolant passage, by adjusting the temperature of the workpiece lifting member to thermal properties of the workpiece lifting member and the mounting table In the same way as to avoid affecting the object to be plasma-treated at the top.

In addition, the present invention has the advantage that the carrying in and out of the large-area workpiece to be processed quickly and safely by forming a plurality of workpiece lifting member on the edge and the center area of the mounting surface.

In addition, the present invention is provided with an elevating member engaging portion coupled to the lower end of each workpiece lifting member inside the hermetic processing chamber, and an elevating member driving portion is provided outside the hermetic processing chamber, and the elevating member engaging portion and the elevating member driving portion are provided with the lower wall of the hermetic processing chamber. It is connected by a connecting member formed to penetrate through, one end is in contact with the predetermined portion of the coupling portion, the other end is to be the workpiece lifting member is grounded by the grounding portion coupled to the predetermined portion of the lower wall of the airtight treatment chamber The member has the same electrical properties as the mounting table.

Hereinafter, with reference to the accompanying drawings will be described in detail a specific embodiment of the present invention.

As shown in FIG. 3, the plasma processing apparatus according to the present embodiment includes an airtight processing chamber 110, a mounting table 120, a workpiece lifting member 130, a gas supply system 140, and an electric field generation system 150. ), An exhaust system 160 is provided.

First, the hermetic processing chamber 110 is formed in a structure capable of forming an interior thereof in a vacuum atmosphere, and various components are installed therein. First, a mounting table 120 on which the object 12 can be mounted is provided below the airtight processing chamber 110. The mounting table 120 performs the plasma treatment after placing the workpiece 12 on the upper surface thereof, and also serves as the lower electrode in certain cases. In this case, since the mounting table 120 must be electrically grounded, the mounting table 120 is electrically connected to the wall of the hermetic processing chamber 110 and grounded.

In addition, in the mounting table 120, it is placed on the mounting table 120 to prevent the temperature of the to-be-processed object 12 to be plasma-treated too high and to maintain a constant temperature at all times to the target 12 Cooling systems (not shown) may also be provided to ensure uniform processing. In such a cooling system, by forming a coolant passage through which a predetermined coolant can circulate inside the mount 120 and circulating the coolant through the coolant passage, it is possible to prevent the temperature of the mount 120 itself from increasing. By supplying a gas for heat conduction to the space formed between the mounting table 120 and the workpiece 12, the convection of the gas allows the heat of the workpiece 12 to be well transferred, thereby allowing the workpiece 12 to be processed. Directly adjusting the temperature of may be further provided.

In addition, in the mounting table 120, the workpiece 12 mounted on the upper surface of the workpiece 12 is placed on the mounting surface in order to prevent the workpiece 12 from being moved during processing or the distance from the mounting table 120 is changed. In close contact with the pressing means (not shown) may be further provided. In general, an electrostatic chuck is widely used as such a pressing means, and the workpiece 12 is pressed against the mounting surface by the electrostatic force generated by the electrostatic chuck.

Next, a gas supply system 140 for introducing a processing gas into the hermetic processing chamber 110 and an electric field generating system 150 for generating an electric field necessary for converting the supplied processing gas into plasma are provided. In this embodiment, a gas supply system and an electric field generation system are provided together, that is, an upper electrode is provided above the inside of the airtight processing chamber 110, and the processing gas is supplied to the inside of the electrode, diffused, and uniformly supplied. do. Of course, high frequency power is applied to the upper electrode 150.

A predetermined portion of the airtight processing chamber 110 is provided with an exhaust system 160 for exhausting the already used process gas. In this embodiment, the exhaust system 160 is provided below the mounting table 120 to supply gas in the airtight processing chamber 110. Exhaust to the bottom of the airtight treatment chamber.

In addition, the plasma processing apparatus according to the present embodiment is provided with a workpiece lifting member 130 for driving through a predetermined portion of the mounting table 120. In the present embodiment, unlike the conventional plasma processing apparatus, as shown in FIG. 4, the workpiece lifting member 130 is provided not only at the edge of the mounting table 120 but also at the central region of the mounting table 120. Therefore, even if a large-area processed object is processed by the plasma processing apparatus according to the present embodiment, it is easy to carry in and take out the processed object 12, and the time required for carrying in and out of the processed object 12 is shortened. This shortens the overall process tact time.

In this case, the object lifting member 130 according to the present embodiment is electrically connected to the wall of the airtight processing chamber 110 in order to have the same electrical and thermal characteristics as the mounting table 120 on which the object 12 is mounted. Is grounded, and a coolant passage is provided therein to regulate the temperature.

That is, by simultaneously grounding the workpiece elevating member 130 to the wall of the airtight processing chamber 110 where the mounting table 120 is grounded, the workpiece elevating member 130 and the mounting table 120 are plasma-processed. While not having a difference in electrical characteristics. Therefore, due to the difference in electrical characteristics such as the voltage between the portion of the mounting member 120 and the portion to which the workpiece lifting member 130 is provided, the degree of treatment of the workpiece 12 may be prevented. Can be.

In addition, as shown in FIG. 5, the coolant circulates in the interior of the workpiece lifting member 130, as in the mounting table 120, thereby mounting the workpiece lifting member 130. Adjust the temperature as in (). At this time, it is preferable to adjust the temperature of the mounting table 120 and the workpiece lifting member 130 in the same manner. In the method of circulating the coolant inside the workpiece lifting member 130, first, a coolant passage 131, which is an empty space, is formed inside the workpiece lifting member 130, and the coolant passage 131 is formed in the coolant passage 131. The coolant supply pipe 139 is formed.

One end of the coolant supply pipe 139 is connected to a coolant supply source (not shown) provided outside the plasma processing apparatus, and the other end thereof is positioned inside the end of the workpiece elevating member 130. Therefore, the coolant supplied by the coolant supply source flows along the coolant supply pipe 139 and is ejected from the end of the workpiece lifting member 130 in which the other end of the coolant supply pipe 139 is located. The ejected coolant flows down through the coolant passage 131 and is discharged to the outside. In FIG. 5, the coolant is circulated only to the workpiece lifting member 130 provided in the center portion of the mounting table among the workpiece lifting members 130, but the coolant is also applied to the workpiece lifting member provided in the edge region of the mounting table. Can be circulated.

As a result, the object lifting member 130 according to the present embodiment has the same thermal and electrical characteristics as the mounting table 120 during the plasma treatment, and thus, the object lifting member 130 is disposed in the central region of the mounting table 120. Even if a) is formed, the degree of treatment of the object 12 to be plasma-processed on the upper side may be changed or stains may not occur.

At this time, the method of grounding the workpiece elevating member 130 to the wall of the airtight processing chamber 110, the airtight member predetermined portion of the elevating member coupling portion 132 coupled to the plurality of workpiece elevating member 130 at the same time It may be grounded by a grounding part 134 connecting a predetermined portion of the processing chamber 110.

However, in this case, if a failure occurs such as disconnection in the grounded part, the detection is not easy and the maintenance work is difficult. Accordingly, as shown in FIG. 3, a separate elevating member driving unit 136 is provided outside the airtight processing chamber 110, and one side surface of the elevating member driving unit 136 and one side wall of the airtight processing chamber 110 are provided. It can be grounded by the grounding portion 134 connecting the. In this case, since the grounded portion is exposed to the outside of the airtight processing chamber 110, a breakdown such as disconnection may be easily found, and the repair work may be easy.

Of course, the connecting member 138 connecting the elevating member coupler 132 provided inside the hermetic processing chamber 110 and the elevating member driving unit 136 provided outside the hermetic processing chamber 110 may be provided in the hermetic processing chamber 110. It is formed through the lower wall, in this case is further provided with a bellows module to maintain the vacuum atmosphere inside the airtight processing chamber 110 and to drive the connecting member 138 up and down, the bellows module, the bottom surface of the airtight processing chamber 110 And between the elevating member driving unit 136. Therefore, when a failure occurs in the bellows module, there is an advantage in that repair work can be performed without difficult work such as separating the upper portion of the airtight processing chamber 110.

When the plasma processing apparatus of the present invention is used, the carrying-in and carrying-out of the large-area to be processed is easy, and the time required for the carrying-in and taking-out operations is reduced, thereby reducing the overall process time.

Claims (6)

In the plasma processing apparatus which performs a predetermined process to a to-be-processed object using a plasma, An airtight processing chamber capable of forming a vacuum atmosphere therein; A mounting table installed inside the hermetic treatment chamber and having a mounting surface on which the object is to be mounted; A plurality of workpiece lifting members formed through a predetermined portion of the mounting table to lower or lift the workpiece on the mounting surface; And a coolant passage formed in the workpiece lifting member to adjust a temperature of the workpiece lifting member by circulating a coolant. And the workpiece lifting member is made of the same material as the mount and is grounded to a wall of the hermetic chamber. delete The method of claim 1, wherein the coolant passage, Plasma processing apparatus, characterized in that formed only on the workpiece lifting member provided in the central region of the mounting table of the workpiece lifting member. 4. The plasma processing apparatus of claim 3, wherein the object lifting member is controlled to maintain the same temperature as the mounting table. According to claim 1, wherein the workpiece lifting member, Plasma processing apparatus characterized in that the plurality is formed on the edge and the center area of the mounting surface. The method of claim 1, Inside the hermetic treatment chamber, a lifting member coupling portion coupled to the lower end of each workpiece lifting member is provided, An elevating member driving unit is provided outside the hermetic processing chamber, It is formed through the lower wall of the airtight processing chamber, and is provided with a connecting member for connecting the lifting member coupling portion and the lifting member driving unit, And an end of the workpiece lifting member is grounded by a grounding portion having one end contacting a predetermined portion of the connection member and the other end contacting a predetermined portion of the hermetic processing chamber.

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