KR100657844B1 - Triode Type Field Emission Devices using Honeycomb mesh electrode with oxide layer and Manufacturing method therof - Google Patents

Abstract

The present invention provides a mesh-type mesh including one oxide film for fabricating a triode type display device that induces field emission from an emitter made of a pointed metal or nonmetallic tip or a nano carbon-based material. A field emission device having a gate electrode on a structure and a method of fabricating the same are described. The amount of electrons emitted from the emitter on the cathode according to the present invention is controlled, the protection of the emitter in the event of arcing, the complete blocking of the leakage current lost to the gate electrode, and the focusing or spreading of the emitted electrons. A three-electrode field emission indicator (FED) and field emission plane lamp (FEFL) using a mesh-like mesh structure with a single oxide film is emitted from the emitter just above the cathode where the patterned emitter is arranged. A mesh-type mesh electrode with openings through which electrons can pass is placed with one oxide layer as an interlayer, and high brightness can be applied to the anode by adjusting a distance from the anode to a spacer, thereby realizing high brightness. Consists of the structure of the device.

  Carbon nanotubes, carbon nanofibers, emitters, field emission display devices, field emission flat lamps, triode structures, mesh gates

Description

Triode Type Field Emission Devices using Honeycomb mesh electrode with oxide layer and Manufacturing method therof}

1 is a cross-sectional view showing a conventional spindt type metal or nonmetal tip type field emission device.

Figure 2 is a cross-sectional view showing a field emission device using a conventional nano carbon-based emitter and a metal mesh grid.

3 is a cross-sectional view schematically showing the structure of the field emission display device according to the present invention.

4A is a perspective view illustrating a mesh mesh structure part, a mesh metal, and a gate electrode in the structure of the field emission display device of FIG. 3.

4B is a view illustrating a mesh mesh structure fixed to a conductive paste in a cathode part in the structure of the field emission display device of FIG. 3.

Figure 5 is a cross-sectional structure and a driving method showing another embodiment of the field emission display device according to the present invention.

6 is a cross-sectional view showing another embodiment of a field emission flat lamp device using the field emission according to the present invention.

* Description of the main parts of the drawing

  11: anode substrate, 12 anode (ITO) electrode, 13 black matrix, 14 (a, b, c): blue, red, green phosphor,

21: cathode substrate, 22: cathode (ITO) electrode, 23: field emitter, 31: gate hole, 32: gate electrode, 41: spacer,

51: metal mesh

100: anode portion, 110: anode substrate,

120: anode electrode, 130: red (a), blue (b), green (c) phosphor

140: white light phosphor, 150: black-matrix,

160: Al metal film,

200: mesh mesh structure part, 210: insulator,

220: gate hole, 230: gate electrode,

240: mesh metal, 250: conductive silver paste

300: cathode portion, 310: cathode substrate,

320: cathode electrode, 330: Ag buffer electrode,

340: nano carbon emitter,

400: spacer

500: Light guide

The present invention relates to a three-electrode type field emission device employing a mesh mesh structure having one oxide film and a method for manufacturing the same, and to control the amount of electrons emitted from the emitter on the cathode and to protect the emitter during arcing. In addition, the present invention relates to a three-electrode field emission device employing a mesh mesh structure having a single oxide film which helps to completely block leakage current lost to a gate electrode and to focus or spread emitted electrons.

Field emitter materials that emit electrons include metals, silicon, oxides, diamonds, diamond-like carbon (DLC), carbide compounds, nitrogen compounds, carbon nanotubes, and carbon nanofibers. Many studies have been made because nanofibers are thin, long, sharp, and physically and chemically stable.

1 is a cross-sectional view schematically showing the structure of a conventional Spindt-type metal or nonmetallic tip type field emission device. The existing Spindt type field emission device has a transparent anode substrate 11 and a cathode substrate 21 and has a structure that maintains a constant gap therebetween using spacers 41 therebetween. After forming an insulating film on the cathode electrode 22, small sized gate holes 31 are formed, and on the cathode exposed to these holes, metal or non-metal based fine tips 23 for electron emission are formed to be discharged from the tip. Electrons are emitted to the anode portion 11 along the gate electrode 32. In the anode portion, the phosphor 14 is applied to a region corresponding to the fine tip on the cathode, and electrons emitted from the fine tip and propagated toward the anode collide with the phosphor 14 to emit light. At this time, it is difficult to apply to a large area field emission device because of the difficulty of forming a fine pattern on the tip during the process and the high cost of the manufacturing process.

2 is a cross-sectional view schematically showing the structure of an electron-emitting device employing a metal mesh grid as an emitter using a conventional nano carbon-based emitter. As shown in FIG. 1, the transparent anode substrate 11 and the cathode substrate 21 are structured to maintain a constant gap with the spacers 41, and after forming an insulating layer on the patterned electrodes 22 on the cathode, fine patterns are formed. An emitter 23 is formed by providing a gate hole 31 and forming a nano carbon-based particulate matter inside the gate hole. The anode portion also has a structure in which the phosphor 14 is applied and formed on a region corresponding to the emitter on the cathode, and also has a black-matrix 13 material. In particular, there is further provided a metal mesh structure 51 for controlling electrons emitted from the emitter between the gate and the anode.

As such, the emitted electrons flow into the gate to form a leakage current while the electrons are emitted, and since the gate hole is larger than the thickness of the gate insulating layer, electron emission is generated due to the anode voltage, thereby reducing the amount of electron emission. Very difficult to control In addition, electron emission is mainly caused by emitters placed near the gate electrode, which causes electron beams to spread from the anode, and a high voltage is applied to the gate, which damages the gate oxide and the resistive layer, thereby providing temporary arcing. Odds will occur. These phenomena impede the structure of the field emission device and can not apply a high voltage, it is impossible to manufacture the device using the field emission.

The present invention has been made to solve the above problems, and one oxide film for freely controlling the emitter protection and electron beam focusing or spreading by suppressing leakage current blocking, electron emission control, arcing caused by high voltage application The present invention provides a three-electrode field emission device employing a mesh mesh structure having the same, and a manufacturing method thereof.

In order to achieve the above object, a three-electrode type field emission device employing a mesh mesh structure having one oxide film proposed in the present invention includes an anode substrate, a cathode substrate, and a cathode substrate disposed to face each other at regular intervals. Cathode electrodes arranged uniformly after patterning on the substrate, particulate nano carbon-based field emitters formed for electron emission on the cathode electrode, a conductive metal film formed directly below or on the boundary to increase adhesion; A mesh mesh structure having a gate hole and an electrode for passing electrons emitted from the field emitter, anode electrodes formed in a direction facing the emitter formed on the cathode substrate, phosphors formed on the anode electrode, and The distance between the anode substrate and the substrate with the mesh mesh electrode It is characterized by consisting of spacers to keep a steady.

In the present invention, the thickness of the mesh mesh structure is placed between the anode electrode and the cathode electrode with a height of 20 ~ 1000㎛, the mesh mesh structure forms a desired hole on a thin metal plate to make a mesh, the insulating film is on all sides It is preferable that the gate electrode is formed on an insulating film coated on the anode substrate, and formed on an insulating substrate opposite to the phosphor surface on the anode substrate.

In addition, in the present invention, the mesh mesh structure is made of stainless steel or other metal that is easy to process and not broken, and can be made by processing a gate hole through which electrons emitted from the field emitter can pass, and the cathode electrode and the electric field Insulator is electrically insulated from the emitter and forms an insulator so that an electric field can be easily applied to the field emitter, and a gate metal is formed by applying a separate metal to easily emit electrons by applying an electric field to the field emitter. Characterized in that.

In the present invention, the field emitter may be composed of a material such as metal, silicon, oxide, diamond, diamond carbon (DLC), carbide compound, nitrogen compound, carbon nanotube, carbon nanofiber, the mesh mesh structure is It is electrically insulated from the cathode electrode and the field emitter and has a separate insulator to easily apply an electric field to the field emitter, and has an effect of suppressing the field emitter from being discharged by the anode voltage. It can have a separate electrode to have, and can also have the effect of electron beam focusing or spreading to allow electrons emitted from the field emitter to reach a particular anode location.

Hereinafter, a field emission device using a mesh structure having only one oxide film according to the present invention and a fabrication method thereof will be described in detail with reference to the accompanying drawings.

3 is a vertical cross-sectional view of a field emission display device using a mesh mesh structure according to the present invention. As shown, the three-electrode field emission device employing the mesh mesh structure according to the present invention basically has an anode portion 100, a mesh mesh structure portion 200, and a cathode portion 300; the anode portion 100 is an anode substrate 110 made of an insulating substrate such as glass with excellent light transmittance, an anode electrode 120 made of a metal or a transparent electrode or the like on a portion of the anode substrate, and on the anode electrode A red (130a), a blue (130b) and a green (130c) phosphor and a black matrix 150 between the phosphors, and a spacer 400, which is a structure for giving a constant spacing, the black-metrics of the anode part Characterized by being placed in an area; The cathode part 300 includes a cathode substrate 310 formed of an insulating substrate having no bendability such as glass, a cathode electrode 320 formed of a metal or a transparent electrode on a portion of the cathode substrate, and the cathode electrode ( A film type (thin or thick film) field emitter 340 consisting of a metal, silicon, oxide, diamond, diamond-like carbon (DLC), carbide compound, nitrogen compound, carbon nanotube, carbon nanofiber, or the like on a portion of 320). Characterized by having; The mesh mesh structure portion 200 is manufactured separately from the cathode portion 300, and forms a mesh mesh by forming a desired gate hole 220 on the thin metal plate 240, as shown in Figure 3 and 4a, In order to prevent electrical conduction with the cathode electrode 320, an insulator is formed on an insulating film 210 coated on all surfaces, and electrons emitted from an electric field emitter pass through the insulating film 210 to the anode electrode 120. The electrode terminal 230 has a gate electrode 230 formed of a common electrode so that a voltage can be applied to a portion of the insulating film 210 so as to correspond to the above-mentioned ones; As shown in FIG. 3, the anode portion 100, the mesh mesh structure portion 200, and the cathode portion 300 may have the field emitter 340 of the cathode portion pass through the gate hole 220 on the mesh mesh structure. It is characterized in that it is packaged so as to correspond to the phosphors 130a, 130b, 130c on the anode electrode 120 of the node portion.

In the present invention, as shown in Figure 4b, each of the gate holes in the mesh mesh structure is preferably formed to correspond one-to-one with the respective red, blue, green phosphor coating surface of the anode portion 100, The height of the mesh mesh structure includes the insulator 210 and the electrode 230 so as to have a range of 20 to 1000 μm to reduce the voltage required for emission from the field emitter 340, and the thickness of the insulating oxide film 210 By having a range of 5 ~ 20㎛ can suppress the leakage of electrons emitted from the field emitter 340 to the gate electrode 230 on the mesh structure, the gate hole (200) on the mesh mesh structure (200) The size of 220 may be 20 to 10 times the thickness of the insulator 210 so that the degree of electron emission can be easily controlled. Preferably, the upper part and the lower part are The ratio of the size of the large hole is formed to be less than twice the size of the small hole based on the size of the small hole, by using a metal and a metal compound in a predetermined portion except for the gate hole 220 on the mesh mesh structure 200 ~ 1 The gate electrode 230 is formed to a height of μm to control the electron emission amount.

In addition, as shown in FIG. 4A, the mesh mesh structure 200 including one oxide film 210 is formed by the following method. The mesh mesh structure 200 is made of a material such as SUS-based, Al-Si-based alloys, and INVA-alloy-based alloys containing Fe-Ni containing Ni-Cr in a thin metal plate shape, and having a low coefficient of thermal expansion. A preliminary annealing is performed once around 400 ° C. to remove the resulting thermal internal stress, some of the gate holes 220 on the mesh mesh structure 200 using a photolithography process, one dot ( A dot sized array is formed, and one gate hole corresponds to each of red, blue, and green phosphors.

In addition, the insulating film 210 on the mesh mesh structure 200 may be spin-coated and dip-coated using SOG (spin-on-glass) or SiO, TiO, AlO, NiO. It is formed on all sides using a sol-gel coating method using a sol containing a back, and the like, and the mesh mesh structure coated with an insulator oxide film is subjected to sufficient annealing at around 520 ° C several times. The residual stress remaining in the mesh mesh structure 200 is completely removed to maintain a flat shape after firing, and a metal such as Al, Ag, or Cr is directly on the mesh mesh structure by using a vacuum-deposition method. The gate electrode 230 is formed.

In addition, the film type field emitter 340 of the cathode part 300 may be formed of metal, silicon, oxide, diamond, diamond-like carbon (DLC), carbide compound, and nitrogen using a catalytic metal on the cathode electrode 320. Screen printing by directly growing compounds, carbon nanotubes, carbon nanofibers, etc., or by mixing particulate powder such as pre-grown diamonds, diamond-like carbons, carbon nanotubes, carbon nanofibers, etc. with a binder as a paste. Or a photosensitive method, wherein the conductive buffer metal film 330 is formed directly below or at the boundary of the particulate paste-type emitter to increase adhesion.

In addition, in order to achieve the above object in the method for manufacturing a field emission device employing the mesh mesh structure according to the present invention; The emission electron focusing method of the field emission display device (FED) is such that the inside is inclined when the gate hole 220 is formed on the mesh mesh structure, and the diameter of the hole 220 facing the anode electrode 120 is equal to the diameter of the hole 220. Making it smaller than the hole diameter of the portion facing the field emitter (340) so that electrons emitted from the field emitter (340) can be focused on a specific region of the anode electrode (120); The emission electron spreading method of the field emission flat lamp (FEFL) is also the same as the method of forming the gate hole 220 of the field emission display device, and the diameter of the hole facing the anode electrode 120 is equal to that of the field emitter 340. By larger than the hole diameter of the portion facing the ()), electrons emitted from the field emitter 340 can be induced to spread to a specific region of the anode electrode 120, the gate electrode 230 on the mesh mesh structure ) Is formed so as not to cover the inclined inner wall of the gate hole 220 to prevent electrons emitted from the field emitter 130 from leaking to the electrode 230 on the mesh mesh structure.

FIG. 5 is a cross-sectional view showing an embodiment of a field emission display device (FED) according to the present invention and a driving method thereof, similar to FIG. 3, and described in detail as follows. 3, 4a, and 4b, the field emission display device can be manufactured, and compared with the field emission display device using the conventional method shown in FIG. 2, the gate electrode 32 and the metal mesh grid electrode ( Unlike the pre-polar structure having 51) at the same time, the shortening of the process of forming the gate electrode 230 on one mesh mesh structure 200 and the point that the oxide insulating film 210 is formed on all surfaces above or below are different. . 5 has the advantage that it can be easily controlled while maximizing the amount of field emission electrons from the field emitter, and the size of the gate hole 220 on the mesh mesh structure, which is important in the field emission display device, is smaller than the anode side. By forming a smaller side, when a negative or positive DC voltage is applied to the gate electrode 230 on the mesh mesh structure, and a high voltage of 1 kV or more is applied to the anode electrode 120, electrons emitted from the field emitter 340 Depending on the voltage of the gate electrode 230 on the mesh mesh structure, the phosphor 130 of the anode portion may be priced to obtain an optimal color purity.

FIG. 6 illustrates the application of the field emission display device of FIG. 5 to a field emission flat lamp (FEFL) according to the present invention.

As shown in FIG. 6, a three-electrode field emission flat lamp employing a mesh mesh structure according to the present invention basically has an anode portion 100, a mesh mesh structure portion 200, and a cathode portion 300. Same as the structure of FIG. 5; The anode part 100 includes an anode substrate 110 formed of an insulating substrate such as glass having excellent light transmittance, and an anode electrode 120 formed of a metal or a transparent electrode on a portion of the anode substrate 110. ) And a white phosphor 140 mixed with red, blue, and green phosphors, which are oxide phosphors or sulfide phosphors generally used in a cathode ray tube (CRT) or the like, on the anode electrode 120 in a constant ratio. The white fluorescent film 140 may be formed by screen printing by mixing with a polymer resin or by mixing with a photosensitive material and forming a white fluorescent film 140 by a photolithography process. It is placed in a part of the white fluorescent film 140 of the node portion, characterized in that for depositing the Al metal film 160 on the back for total reflection of the white light emission (deposition) He said; The cathode portion 300 is characterized in that the same as the structure of FIG. The mesh mesh structure part 200 is manufactured separately from the cathode part 300 and, as described in the embodiment of FIG. 5, the field emission plane lamp (FEFL) so as to be easily controlled while maximizing the amount of the field emission electrons. By applying a DC voltage to the gate electrode 230 on the mesh mesh structure 200 by forming the anode side larger than the cathode side, the size of the gate hole 220 on the mesh mesh structure 200 is important. When a DC high voltage of 1 kV or more is applied to 120, electrons emitted from the field emitter 340 are affected by the voltage of the gate electrode 230 on the mesh mesh structure to induce the spread of electrons toward the anode electrode 120. It is possible to obtain a white light and to adopt a separate light guide (light guide) to obtain a uniform brightness over the front .

 The field emission flat lamp (FEFL) of FIG. 6 is driven in the same manner as in FIG. By applying a constant DC voltage to the gate electrode 230 of the mesh mesh structure to induce electron emission from the film-type field emitter 340 formed on the constant cathode electrode 320 of the cathode portion, the anode portion ( After applying a high DC voltage to the transparent electrode 120 of 100 to accelerate the emitted electrons with high energy, a scan pulse signal of a negative voltage is applied to the gate electrode 230 of the mesh mesh structure. A positive or negative data pulse signal is input to the cathode electrode 320 to represent an image. Unlike the driving of the FED, the field emission flat lamp emits continuous white light.

As described above, the field emission device employing the mesh mesh structure having one oxide film according to the present invention includes an insulating substrate such as glass, a cathode electrode formed on the insulating substrate, and a nano carbon system formed on a part of the cathode electrode. A field emitter, a buffer electrode formed around or under the field emitter, a mesh mesh structure formed on the cathode, a gate hole and an electrode formed in a portion of the mesh structure, and the electrons emitted from the field emitter collide with each other. Configured with node division,

The gate electrode on the mesh mesh structure controls the amount of electrons emitted from the field emission emitter and prevents artificial arcing by forming a uniform electrode potential between the anode portion and the mesh mesh gate electrode. A gate electrode can be formed outside the hole rather than the oxide film around the gate hole to prevent leakage current. In addition, it is possible to induce the role of focusing or spreading on the phosphor of the anode part facing the electrons emitted to the field emitter by varying the size of the inclined region inside the gate hole on the mesh mesh structure and the gate hole. As a result, the leakage current of the gate electrode, the electron emission by the anode voltage, and the electron emission amount control, which are problems of the conventional nano carbon-based field emission device, can be improved.

Particularly, when the field emission device according to the present invention is applied to the field emission display device (FED) and the field emission flat lamp (FEFL), the anode portion is applied through the gate electrode on one mesh mesh structure. Since the distance between the and cathode portions can be freely adjusted, a high voltage can be applied to the anode, thereby greatly improving the luminance during field emission. Also, when fabricating a mesh mesh structure by varying the size of the hole above or below the holes on the mesh mesh structure, the field emission display device for electrons emitted from the field emitter to focus on the anode phosphor using one mesh structure Each of the high brightness display elements can be fabricated by using a field emission flat lamp (FEFL) in which electrons emitted from the FED and the field emitter are intended to spread to the anode phosphor.

Claims (27)

In a field emission device sealed with two substrates facing each other, The field emission device includes a transparent insulating glass substrate, an anode formed on the insulating glass substrate, and a phosphor formed on a portion of the anode electrode; Another cathode electrode formed on the insulating glass substrate, and nano carbon-based field emitters formed on a portion of the cathode electrode; And a mesh metal mesh structure formed around the electric field emitter, a gate hole formed on the mesh metal mesh structure, an insulating film formed on all surfaces of the mesh mesh structure on which the gate hole is formed, and formed on one side except a gate hole on the mesh mesh structure. A tripolar field emission device employing a mesh mesh structure having one oxide film including gate electrodes. delete delete The method of claim 1, The mesh mesh structure is positioned as an anode portion directly above and an anode portion directly above the gate electrode on the mesh mesh structure so that electrons emitted from the field emitter with a separate insulator can go to a specific anode position. To form into a structure; Electrons emitted from the field emitter penetrate the gate hole on the mesh mesh structure, and the speed and amount of electrons moving in the vicinity thereof are adjusted to a voltage that imparts to the gate electrode on the mesh mesh structure; A mesh mesh having one oxide film is formed so that the phosphor on the anode faces directly above the gate electrode on the mesh mesh structure so that electrons emitted from the field emitter can go to a specific anode position. A three-electrode field emission device employing a structure. The method of claim 1, The mesh mesh structure is a three-electrode field emission device employing a mesh mesh structure having one oxide film, characterized in that formed in a height of 20 ~ 1000㎛. The method of claim 1, The mesh mesh structure is a three-electrode electric field employing a mesh mesh structure having one oxide film, characterized in that formed of stainless steel or INVA steel containing at least one element of Ni, Cr, Fe, Al, Mg, Si Emitting device. delete The method according to any one of claims 1, 5 and 6, The size of the gate hole on the mesh mesh structure is different from the size of the upper portion and the lower portion, the size ratio of the upper portion and the lower portion is formed so that the size of the large hole is less than twice the size of the small hole. A field emission device to be used. The method of claim 8, The gate hole on the mesh mesh structure, Applying a photosensitive organic substance on a metal plate having a well polished surface; Inducing a condensation polymerization reaction by irradiating light through a mask on a metal plate coated with an organic material using a vacuum ultraviolet ray lamp; And etching using a corrosion solution; A field emission device comprising forming a pattern of a gate hole by using a process of removing organic matter remaining in an unetched portion. The method of claim 9, And the gate hole on the mesh mesh structure is electrically insulated from the cathode electrode and the field emitter, and an insulating film is coated on the front surface to apply an electric field to the field emitter. The method of claim 10, Forming an insulating film including at least one element of Si, Ti, and Al on the entire surface of the gate hole on the mesh mesh structure, and in spin-coating, dip-coating, and screen-printing methods. A field emission device, characterized in that formed in one. The method of claim 11, Wherein the thickness of the insulating film on the mesh mesh structure is less than 10 percent of the thickness of the mesh structure. The method of claim 11, And forming a common electrode by depositing a metal of Al, Ag, Cr, or Ni on one surface of the mesh mesh structure other than the gate hole. The method of claim 13, The common electrode on the mesh mesh structure is formed 10 ~ 30 mm smaller than the size of the gate hole to control the focusing or spreading of the electron emission field emission device. The method of claim 14, Depending on the direction in which the mesh mesh structure is manufactured separately and the common electrode is formed, (A) the field emission display device (FED), or (B) the field emission plane lamp (FEFL) can be selectively used both. Field emission devices. The method of claim 15, The field emission display device of claim 1, wherein the direction in which the common electrode of the mesh mesh structure is formed is formed on a surface having a small size of the gate hole to control the concentration of electrons emitted from the field emitter. The method of claim 15, And the direction of forming the common electrode of the mesh mesh structure in the step (b) is formed on the large surface of the gate hole to induce the spread of electrons emitted from the field emitter. The method according to claim 13 or 14, And a gate electrode for controlling focusing or spreading of emission electrons on the mesh mesh structure is not covered by an inner wall of the gate hole insulator on the mesh mesh structure. The method of claim 1, The nano-carbon field emitter formed on a portion of the cathode electrode is a field emission device characterized in that it comprises at least one of those consisting of diamond-like carbon (DLC), carbide compounds, carbon nanotubes, carbon nanofibers. The method of claim 1 or 19, The field emission device of claim 1, wherein the nano-carbon field emitter formed on a portion of the cathode electrode is formed by directly growing on the portion of the cathode electrode. The method of claim 1 or 19, The nano-carbon field emitter formed on a portion of the cathode electrode is a field emission device, characterized in that formed by printing a mixture (paste) on the portion of the cathode electrode. The method of claim 21, And forming a buffer electrode directly below or on a peripheral boundary where the nano carbon-based field emitter is formed to increase the adhesion of the emitter. The method according to claim 1 or 15, And a black matrix and phosphors of red (R), blue (B), and green (G) on a part of the anode, wherein the transparent electrode is partially formed. The method according to claim 1 or 15, A white phosphor having a mixture of red (R), blue (B), and green (G) phosphors, or a white light phosphor having a single white phosphor composition formed on a part of the anode formed transparent electrode; . The method according to claim 1, 15, 19, 23, and 24, The field emission device includes the anode portion, the mesh mesh structure portion, and the cathode portion, and the nano-carbon field emitter of the cathode portion has a phosphor on the anode electrode of the anode portion through a gate hole of the mesh mesh structure portion. And the anode portion, the mesh structure portion and the cathode portion are encapsulated in parallel with each other and parallel to each other. The method of claim 25, A field emission display device or a field emission plane lamp comprising the anode portion, the mesh structure portion, and the cathode portion encapsulated; The anode portion has a transparent electrode, phosphors of red (R), blue (B) and green (G) on a part of the transparent electrode, and a black matrix between the phosphors; The cathode portion has an insulating substrate, a plurality of cathode electrodes capable of applying a voltage in a row or column direction on the insulating substrate, and a film-type nano carbon-based field emitter formed on a portion of the cathode electrode; The mesh mesh structure portion has a gate hole formed inside the metal mesh, an insulator formed on all surfaces, and a common gate electrode capable of applying a voltage to one surface of the mesh mesh; The cathode portion, the mesh mesh structure portion, and the anode portion support spacers so that the film-type field emitters of the cathode portion are aligned and encapsulated so as to coincide with the phosphors of the anode portion through the gate holes of the mesh mesh structure portion. A field emission device, characterized in that. The method of claim 26, By applying a constant DC voltage to the gate electrode of the mesh mesh structure portion to induce electron emission from the nano carbon-based field emitter of the cathode portion, at the same time by applying a DC high voltage to the transparent electrode of the anode portion of the emitted electrons to a high energy After accelerating, a negative voltage and a scan pulse signal are input to the gate electrode of the mesh mesh structure part, and a positive or negative data pulse signal is input to the cathode electrode of the cathode part to represent an image or white light emission. Field emission display device.

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