KR100651600B1 - Cantilever for use in probe based data storage and method of fabricating the same - Google Patents

Abstract

A cantilever for a probe type information storage device and a method for manufacturing the same are provided to make the thickness of the cantilever uniform by forming a body of the cantilever of a silicon nitride, thereby preventing the breakage of the cantilever due to excessive stress. A silicon nitride body has a first portion fixed onto a supporter(11) and a second portion floating. A thermal resistance type sensor(12) is formed on an end of the second portion of the silicon nitride body. A tip(13) for recording and reproducing information is protruded from the silicon nitride body, wherein the tip(13) is disposed on the thermal resistance type sensor(12), or apart from the thermal resistance type sensor(12) at a predetermined distance. An electrode wire(14) is formed on the silicon nitride body, and supplies the electricity to the thermal resistance type sensor(12) and the tip(13).

Description

Cantilever for probe type information storage device and its manufacturing method {Cantilever For Use In Probe Based Data Storage And Method Of Fabricating The Same}

1A and 1B are perspective views showing a schematic configuration and principle of information recording / reproducing of a cantilever for a probe type information storage device according to the prior art;

2 is a perspective view showing an embodiment of a cantilever for a probe type information storage device according to the present invention;

3 is an enlarged perspective view showing a free end of an embodiment of a cantilever for a probe type information storage device according to the present invention;

4 is a cross-sectional view showing an embodiment of a method for manufacturing a cantilever for a probe type information storage device according to the present invention.

*** Explanation of the Major Symbols in the Drawings ***

10 body 11 fixed part

11a: fixed part silicon nitride film 11b: fixed part silicon nitride film

11c: fixed electrode pad 12: thermal resistance sensor

13: tip 14: electrode wiring

15: electrode pad for applying electrostatic power 16a 16b: ohmic contact

20: support layer 25: support

30 silicon oxide film 40 silicon nitride film

50 silicon film

The present invention relates to a cantilever for a probe type information storage device and a method for manufacturing the same, and more particularly, by forming the body of the cantilever with silicon nitride, the thickness of the cantilever can be uniformly formed, and thus the cantilever is bent or excessively It is to provide a cantilever for a probe type information storage device that can be prevented from being damaged by stress.

Atomic force microscopy (AFM) is a scanning probe microscopy (SPM) principle that measures the atomic force between the tip and the specimen by forming a few nm tip at the tip of a tiny rod called a cantilever. By measuring the surface shape, electrical and magnetic properties of the specimen. In recent years, research on nanophotosensitive devices or nanoinformation storage devices has been actively conducted using the principle of such an atomic microscope. Nano information storage device can store information using a probe of several nm has the advantage that a data storage device having a high storage density of terabit or more can be implemented.

Milliped, developed by IBM, is a storage device that uses polymer materials such as PMMA as recording media, using the principle of probe measurement. The milliped is mounted in the header in two-dimensional unit probes to improve speed. As shown in FIGS. 1A and 1B, each probe has a support 200, a cantilever body 210 formed of a silicon material so that a current flows, and a heat resistance type formed of an electric resistor at the end of the cantilever to generate heat. The sensor 220 is formed to be spaced apart at predetermined intervals from the sensor 220 and the thermal resistance sensor, and is formed of a tip 230 protruding from silicon to sense the recording layer 120 of the recording medium.

The recording medium recorded and reproduced by the probe may include a recording layer 120 made of PMMA polymer that inserts a hot tip heated by a heat resistant sensor into a recording groove to recognize data, and a hardness for protecting the tip. Is composed of a protective layer 110 formed of a low polymer material and a substrate 100 formed of a silicon material having a high hardness so as to have excellent wear resistance.

Referring to the information recording method of the probe type information storage device, as shown in FIGS. 1A and 1B, when electricity is supplied to the tip through the body of the cantilever made of silicon, the tip 230 is heated, and the heated The tip softens the recording layer 120 of the recording medium in contact. At this time, when a local force is applied using the tip, the groove 300 is formed in the recording layer of the recording medium, and information is recorded using the groove 300.

The information reproducing method of the probe type information storage device is made by using the resistance change of the thermal resistance sensor. More specifically, the heat-resistant sensor is heated by flowing electricity to the tip through the body of the cantilever, and if the cantilever moves along the grooved recording medium while the heat-resistant sensor is heated, whether the groove is formed. As a result, the distance between the heat resistant sensor and the recording medium changes, and this difference in distance causes a difference in the thermal conductivity of the recording medium and the heat resistant sensor, thereby changing the temperature of the heat resistant sensor. The temperature change of the thermal resistance sensor causes a change in resistance, and thus detects and reproduces the information.

The above-described conventional probe type information storage device has a simple manufacturing process, but has various problems. The manufacture of the cantilever of the information storage device uses a silicon on insulator (SOI). Since the device layer of the SOI wafer is not uniform in thickness and it is difficult to precisely control the etching rate in the process of etching silicon, the thickness variation is 200 nm or less. It is difficult to reduce. Due to the nonuniformity of the cantilever thickness, a difference in the degree of warping of the cantilever occurs, which is one of the important causes of deterioration of the reliability of recording and reproducing in the probe type information storage device.

In addition, in order to increase the sensitivity of the thermally resistive sensor, the heat of the thermally resistive sensor must be reduced along with the cantilever and lost. This requires increasing the length of the silicon connection to the thermally resistant sensor, reducing its width and thickness, which reduces the mechanical stability of the cantilever, increasing the likelihood of breakage of the cantilever.

Therefore, to solve this problem, it is necessary to develop a probe type information storage device having a structure capable of achieving uniformity of the thickness of the cantilever and preventing heat loss through the cantilever.

The present invention, in order to solve the above problems, by forming the body of the cantilever with silicon nitride, it is possible to uniformly form the thickness of the cantilever, according to the probe that can prevent the cantilever bent or broken by excessive stress It is to provide a cantilever for a type information storage device and a manufacturing method thereof.

The present invention is a part fixed on the support, the part is a silicon nitride body is floating; A heat resistant sensor formed at an end of the floating portion of the body; A tip for protruding from the heat resistant sensor or spaced apart from the heat resistant sensor at a predetermined interval and protruding from the body, for recording and reproducing information on the recording medium; And an electrode wiring formed on the body to supply electricity to the heat resistant sensor and the tip.

In addition, the cantilever for the probe type information storage device, characterized in that it further comprises an electrostatic force application electrode pad formed on the floating portion of the body.

In addition, the tip and the thermal resistance sensor is a cantilever for a probe type information storage device, characterized in that made of doped silicon.

In addition, the silicon film formed on the fixed portion of the body; And an electrode pad formed on the silicon layer, the electrode pad being connected to the electrode wiring.

In addition, the body is a first body that is joined in a portion in which the branch branched out in two branches in the middle of the support portion is injured; And a second body that is joined at a portion in which the branches extending from both ends of the support are injured, and the first body and the second body are connected at the ends of the injured portion. Cantilever for the device.

In addition, the cantilever for the probe type information storage device, characterized in that it further comprises an ohmic contact portion formed between the thermal resistance sensor and the electrode wiring, or between the tip and the electrode wiring.

In addition, the ohmic contact is a cantilever for a probe type information storage device, characterized in that made of N or P doped silicon at a concentration of 1x10 ¹⁵ to 1x10 ¹⁶ .

The body is a cantilever for a probe type information storage device, characterized in that a nitride film having a low silicon composition ratio is laminated on a nitride film having a high silicon composition ratio.

Also, forming a laminated film in which a silicon film is laminated on a silicon nitride film on a substrate; Etching the silicon film to form a tip and a heat resistant sensor; Forming an electrode wiring on a silicon nitride film to connect the tip and the heat resistant sensor; Etching the silicon nitride film to form a body; And removing a portion of the substrate to lift a portion of the body on which a tip and a heat resistant sensor are formed.

In addition, the forming of the laminated film on which the silicon film is laminated on the silicon nitride film on the substrate may include: depositing a silicon nitride film on the silicon film using a low temperature chemical vapor deposition method; Bonding the silicon nitride film to a substrate; And polishing the silicon film. A method of manufacturing a cantilever for a probe type information storage device, characterized in that it comprises a step of polishing the silicon film.

The substrate is a method of manufacturing a cantilever for a probe type information storage device, characterized in that a silicon oxide film or a silicon nitride film is laminated on a support layer.

The forming of the tip and the heat resistance sensor may include forming a tip pattern and a heat resistance sensor pattern by etching the silicon layer; And a step of doping the tip pattern and the heat resistant sensor pattern.

In addition, the forming of the tip and the heat resistance sensor is a method of manufacturing a cantilever for a probe type information storage device, characterized in that further forming an ohmic contact portion connected to the tip or heat resistance sensor.

In addition, the step of forming the electrode wiring is a method of manufacturing a cantilever for a probe type information storage device, characterized in that further forming an electrode pad for applying a constant power on the floating portion of the body.

Hereinafter, with reference to the accompanying drawings will be described in detail the technical features of the present invention. The invention can be better understood by the examples, the following examples are for illustrative purposes of the invention and are not intended to limit the scope of protection defined by the appended claims.

2 is a perspective view showing an embodiment of a cantilever for a probe type information storage device according to the present invention, and FIG. 3 is an enlarged perspective view showing an injured end of the cantilever. As shown, one embodiment of the cantilever for the probe type information storage device according to the present invention is a part fixed on the support (not shown), a part of the silicon nitride body (10) is floating; A heat resistant sensor 12 formed at an end of the floating portion of the body; A tip (13) formed on the heat resistant sensor or spaced apart from the heat resistant sensor at a predetermined interval to protrude on the body, for recording and reproducing information on a recording medium; And an electrode wiring 14 formed on the body to supply electricity to the heat resistant sensor and the tip; An electrostatic force application electrode pad 15 formed on the floating portion of the body; And ohmic contact portions 16a and 16b formed between the thermal resistance sensor and the electrode wiring, or between the tip and the electrode wiring, and reference numeral 11 denotes a fixing portion of the body fixed to the support.

Due to the structural characteristics of the cantilever, the upper part of the fixing part receives a compressive force, and the lower part of the fixing part receives a tensile force. In the present embodiment, the fixing part includes a silicon nitride film 11a, a silicon film 11b formed on the silicon nitride film, and an electrode pad 11c formed on the silicon film. The silicon nitride film 11a is a part that forms one end of the body of the cantilever and is a portion where the compressive force and the tensile force by driving the body are concentrated. The silicon film 11b is formed on the silicon nitride film, thereby not only forming the fixing portion but also preventing the cantilever from being subjected to excessive stress by the compressive force.

The present invention uses silicon nitride as the material of the body of the cantilever, the silicon nitride is an insulator. Therefore, it is necessary to form electrode wiring on the body of the cantilever in order to supply electricity to the tip and the heat-resisting sensor, the electrode pad (11c) of the fixing portion is connected to the electrode wiring to conduct electricity through the electrode wiring Do it.

The body 10 is made of silicon nitride, and in the present embodiment is made of Si ₃ N ₄ . The cantilever according to the prior art uses a body made of silicon, which not only has a non-uniform thickness of the device layer of the SOI wafer used for manufacturing, but also an etching process in the silicon etching process for manufacturing the body shape of the cantilever. It is difficult to uniformly form the thickness of the cantilever body because of the difficulty in controlling the speed. However, the silicon nitride film used for the production of the cantilever body made of silicon nitride according to the present invention is deposited on silicon by low temperature chemical vapor deposition, so that the thickness error can be maintained at 1% or less. Therefore, when the cantilever is manufactured using a 300 nm thick silicon nitride film, the thickness error may be maintained at 3 nm or less.

If the thickness of the cantilever body is non-uniform, through the post-process, etc., bending of the cantilever occurs in the body formed with the thin film, which can easily break the cantilever and cause the cantilever to malfunction, thus recording / reproducing the cantilever. Considering that it lowers the reliability of the cantilever according to the present invention, it is expected that the cantilever can greatly contribute to improving the stability and reliability of the probe type information storage device.

In addition, a cantilever employing a heat resistant sensor and a tip must supply electricity to heat the heat resistant sensor and the tip, and a cantilever according to the prior art provides a heat resistant sensor and a tip by electrically passing the silicon body. Heat. Therefore, the body of the cantilever is also heated by electricity, the heat loss by the cantilever is one of the causes of sensitivity degradation and power loss of the thermal resistance sensor.

While the thermal conductivity of silicon is 148 W / mK, the thermal conductivity of silicon nitride is 16 W / mK, which is about 10 times lower. Due to the insulating property of silicon nitride, the electrode wiring must be formed on the silicon nitride body, so that heat loss occurs due to the electrode wiring. However, the electrode wiring has no significant difference in thermal conductivity compared to silicon, while the electrical conductivity is excellent. The width of the electrode wiring can be made fine to 100 nm or less, and the surface area can be reduced. Therefore, the heat loss can be greatly reduced as compared with the conventional cantilever.

In the present embodiment, the body includes a first body that is joined in a portion in which the branch branched out in two branches in the middle of the support portion is injured; And a second body that is joined at a portion in which the branches extending from both ends of the support are injured, and the first body and the second body are formed in a shape connected at the end of the injured portion. In addition, according to the arrangement and structure of the thermal resistance sensor, tip, electrode wiring, etc., it may be made of a branch branched into two branches, the branch branched into three branches, etc.

The body may have a structure in which a nitride film having a low composition ratio of silicon is stacked on the nitride film having a high composition ratio of silicon. In consideration of driving, the cantilever is preferably formed such that the angle formed by the support of the cantilever and the longitudinal direction of the body is slightly inclined in the direction in which the tip protrudes, not vertically. The tensile stress of the silicon nitride film becomes smaller as the composition ratio of silicon is higher. Therefore, as described above, when the body of the cantilever is formed by stacking a nitride film having a low silicon composition ratio on the nitride film having a high silicon composition ratio, the tensile stress of the nitride film having a high silicon composition ratio is a nitride film having a relatively low silicon composition ratio. Since it is larger than the tensile stress of, the bending ratio toward the nitride film with a lower composition ratio of silicon with a higher tensile stress is obtained.

Such a structure can be formed simply by changing the injection concentration of the source gas in the step of depositing a silicon nitride film to be described later.

The heat resistant sensor 12 is necessary for the process of reproducing the information stored in the recording medium. In more detail, the principle of information reproduction is based on thermal conductivity therebetween, which varies with the distance between the thermally resistive sensor and the recording medium surface. The heat resistant sensor transfers heat to the recording medium via air existing between the recording medium and the recording medium. When the tip of the cantilever moves to the groove of the recording medium, the distance between the thermally resistive sensor and the surface of the recording medium is reduced, and heat conduction occurs more efficiently and quickly. As a result, the temperature of the thermal resistance sensor is changed by the difference in thermal conductivity, which causes a difference in electrical resistance, so that the detection circuit detects the change in the resistance and reproduces the information. The thermally resistive sensor is doped, and as the temperature of the thermally resistive sensor increases, the resistance decreases as the number of inherent carriers increases, and when the temperature of the thermally resistive sensor decreases, the resistance increases.

The heating temperature may vary depending on the doping concentration of the heat resistant sensor. However, since the deformation of the recording layer of the recording medium should not occur in the information reproducing process, it is heated to a temperature lower than the heating temperature in the recording process. Change of the resistance is generally from about 10 ^-5 / nm, this rate of change according to the thermal resistance is (ΔR / R), or from about 10 ^-4 to about 5x10 ^-4, which to detect a signal, which contains information It is a change in size enough.

The thermal resistance sensor is made of silicon and may be N or P doped.

The tip 13 is directly involved in the recording / reproducing of the information. Since the probe has a narrow tip shape, it is easy to form a groove by applying a local pressure to the recording medium, and can easily enter and exit the groove.

The diameter of the lower end of a typical probe is about 10 nm and is formed of doped silicon, such as a heat resistant sensor.

Since the cantilever according to the present invention uses a body made of an insulator silicon nitride, an electric supply for heating the heat resistant sensor and the tip is made through the electrode wiring 14. Since the electrode wiring is formed on the body of the cantilever, the wiring structure varies according to the shape of the body, and when the cantilever includes an electrode pad for applying electrostatic power, it is formed to be connected to the electrode pad for applying electrostatic power.

As the metal for the electrode wiring, an alloy such as aluminum, gold, aluminum / titanium, aluminum / titanium nitride / titanium, platinum / titanium, and gold / titanium may be used.

The electrostatic force applying electrode pad 15 is for applying a force to the cantilever in the process of recording information, and is formed on an injured portion of the body. If the cantilever is to be driven by the electrostatic force, another electrode located under the recording medium is required. When voltage is applied to the electrode under the recording medium, repulsive force is applied to the electrode pad for applying electrostatic force, and the cantilever moves in the direction in which the tip protrudes. The cantilever needs to be formed in the shape of a plate in order to receive sufficient force to move, and in consideration of the structure of the cantilever, the farther away from the fixing part, the more preferably formed adjacent to the tip.

The electrode pad for applying electrostatic force is formed of the same material as the electrode wiring formed on the cantilever and is formed together in the step of forming the electrode wiring.

The ohmic contacts 16a and 16b are formed between a heat resistance sensor and a tip made of silicon and an electrode wiring made of metal, thereby reducing contact resistance. In ohmic contacts between silicon and metal, the contact resistance becomes large, which leads to heat loss, which prevents heat from concentrating on the tip and the thermally resistant sensor.

The ohmic contact is formed of doped silicon, like the heat resistant sensor and tip, and is heavily doped to reduce contact resistance. Thermally resistant sensors and tips are generally doped at concentrations of about 5x10 ¹⁴ , while the ohmic contacts are doped at concentrations of 1x10 ¹⁵ to 1x10 ¹⁶ . Phosphorus (P) may be used for N doping and boron (B) may be used for P doping.

One embodiment of a method of manufacturing a cantilever for a probe type information storage device according to the present invention comprises the steps of: forming a laminated film on which a silicon film is formed on a silicon nitride film; Etching the silicon film to form a tip and a heat resistant sensor; Forming an electrode wiring on a silicon nitride film to connect the tip and the heat resistant sensor; Etching the silicon nitride film to form a body; And removing a portion of the substrate to float the portion where the tip of the body and the heat resistant sensor are formed.

First, as shown in FIG. 4A, a laminated film in which the silicon film 50 is formed on the silicon nitride film 40 is formed on a substrate made of the support layer 20 and the silicon oxide film 30. The silicon oxide film is to improve the bonding between the substrate and the silicon nitride. In addition to this, instead of the silicon oxide film, a silicon nitride film or the like may be formed to improve bonding. As the support layer, a silicon wafer is used.

The wafer bonding may include depositing a silicon nitride film on a silicon film using a low temperature chemical vapor deposition method; Bonding the silicon nitride film to a substrate; And polishing the silicon film.

For wafer bonding, first, a substrate and a laminated film in which a silicon film is formed on a silicon nitride film are prepared. The substrate is formed of a silicon wafer support layer and a silicon oxide film, and the silicon oxide film may be formed by thermal oxidation or chemical vapor deposition. The laminated film in which a silicon film is formed on the silicon nitride film is formed by depositing a silicon nitride film on a silicon film. In order to achieve the thickness uniformity of the silicon nitride film, the deposition of the silicon nitride film is preferably deposited using a low temperature chemical vapor deposition method. As described above, in the process of depositing the silicon nitride film, when the cantilever body is formed by forming a nitride film having a relatively low silicon composition on the nitride film having a high silicon composition by controlling the composition ratio of the deposition gas, due to the difference in tensile stress of the silicon nitride film. This can cause the body of the cantilever to bend in the direction in which the tip protrudes.

Next, the substrate and the silicon nitride film are bonded. Before joining the substrate and the silicon nitride film, it is preferable to clean each of the substrate and the silicon with sulfuric acid in order to remove impurities and improve bonding. The bonding between the substrate and the silicon nitride film is performed by heating to about 1100 ° C. while bringing the substrate and the silicon nitride film into contact with each other.

Next, the silicon film formed on the silicon nitride film is polished to form a silicon film having a desired thickness.

In addition, a wafer level bonding method may be used for integration with a CMOS circuit. The specific method of wafer level bonding is well described in US Pat. No. 6,835,589B2.

Next, as illustrated in FIGS. 4B and 4C, the silicon film 50 may be etched to form a tip 13, a heat resistance sensor (not shown), an ohmic contact 16b, and a support part. ) To form a pattern. More specifically, the silicon film 50 is etched to form a pattern of a tip 13, a thermal resistance sensor (not shown), an ohmic contact 16b and a support 11b (FIG. 4B); And doping the tip pattern 13, the heat resistant sensor pattern (not shown), and the ohmic contact portion pattern 16b (FIG. 4C).

When the silicon film is etched to form a pattern of a tip, a heat resistant sensor, an ohmic contact part and a fixing part, the remaining part is etched while leaving each pattern so that the silicon nitride film is exposed. As the etch protective film, a silicon oxide film can be formed using a thermal oxidation method. The pattern of the ohmic contact and the support may be omitted.

The tip pattern, the heat resistive sensor pattern, and the ohmic contact pattern are doped with dopants such as phosphorous and boron. The ohmic contact is to prevent the resistance from increasing at the connection portion between the electrode wiring and the tip and the heat resistant sensor, and is more heavily doped than the tip and heat resistant sensor. Heat resistance-type sensor and the tip is generally at about a concentration of 5x10 ¹⁴ degree, the ohmic contact is doped with 1x10 ¹⁵ to 1x10 ¹⁶ concentration.

After the doping is completed, a heat treatment step may be performed to activate the dopant. The heat treatment temperature is about 1000 ° C. and heated for about 30 minutes.

Next, as shown in FIG. 4D, an electrode wiring 14 is formed on the silicon nitride film 40 to connect the tip 13, the ohmic contact part 16b, and a heat resistant sensor (not shown). The electrode is for supplying electricity to the tip and the thermal resistance sensor, it is preferably formed in a pad shape on the silicon film (11b) constituting the fixing portion. Although not shown, an electrostatic electrode pad is formed on the silicon nitride film so as to be adjacent to the tip.

Next, as shown in FIG. 4E, the silicon nitride film 40 is etched to form the body 10, and the support layer 20 and the silicon oxide film 30 of the substrate are removed to remove the tips and heat of the body. Floating the part where the resistive sensor is formed.

In the present embodiment, the body is composed of a fixing part and a floating area fixed to the support part, the fixing part is composed of a fixing part silicon nitride film 11a, a fixing part silicon film 11b, and a fixing part electrode pad 11c. . The body is the first body which is joined in the part in which the branch branched out in two branches in the middle of the support portion is injured; And a second body which is joined at a portion in which the branches extending from both ends of the support are injured, wherein the first body and the second body are formed in a shape that is connected at the end of the injured portion.

Various methods are known to remove a portion of the substrate to float the tip of the body and the portion formed with the heat resistance sensor, and bulk micromachining or surface micromachining may be used. .

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the scope of the invention.

As described above, the cantilever for a probe type information storage device according to the present invention includes a body made of silicon nitride, so that the thickness of the body of the cantilever can be uniformly formed, and the cantilever is bent due to the nonuniformity of the thickness. Since excessive stress can be prevented, the stability and reliability of the cantilever can be improved.

In addition, since the body of the silicon nitride cantilever has low thermal conductivity and low heat loss, heat is concentrated on the tip and the heat resistant sensor, thereby reducing unnecessary power consumption and improving the sensitivity of the cantilever. Can be.

In addition, the method of manufacturing a cantilever for a probe type information storage device according to the present invention can simplify the process of the body of the cantilever in a desired direction by a simple method of changing the composition ratio of the deposition gas during the deposition of the silicon nitride film. That has a beneficial effect.

Claims (14)

Some are fixed on the support, and some are on the rise of the silicon nitride body; A heat resistant sensor formed at an end of the floating portion of the body; A tip which protrudes from the body on the heat resistant sensor or spaced apart from the heat resistant sensor at a predetermined interval, and records and reproduces information on a recording medium; And A cantilever for a probe type information storage device comprising an electrode wiring formed on a body to supply electricity to the heat resistant sensor and tip. The method of claim 1, A cantilever for a probe type information storage device, characterized in that it further comprises an electrostatic force application electrode pad formed on the floating portion of the body. The method of claim 1, The tip and heat resistant sensor cantilever for a probe type information storage device, characterized in that made of doped silicon. The method of claim 1, A silicon film formed on the fixed portion of the body; And A cantilever for a probe type information storage device, formed on the silicon film, further comprising an electrode pad connected to the electrode wiring. The method of claim 1, The body is the first body which is joined in the part in which the branch branched out in two branches in the middle of the support portion is injured; And Probing type information storage device, characterized in that the branches extending from both ends of the support portion is made of a second body to be joined in the injured portion, the first body and the second body is connected at the end of the injured portion Cantilever. The method of claim 1, A cantilever for a probe type information storage device, characterized in that it further comprises an ohmic contact portion formed between the thermal resistance sensor and the electrode wiring, or between the tip and the electrode wiring. The method of claim 6, The cantilever for a probe type information storage device, wherein the ohmic contact portion is made of N or P doped silicon at a concentration of 1 × ^{10 15} to 1 × 10 ¹⁶ . The method of claim 1, The body is a cantilever for a probe type information storage device, characterized in that the nitride film having a low silicon composition ratio is laminated on the nitride film having a high silicon composition ratio. Forming a laminated film having a silicon film laminated on the silicon nitride film on a substrate; Etching the silicon film to form a tip and a heat resistant sensor; Forming an electrode wiring on a silicon nitride film to connect the tip and the heat resistant sensor; Etching the silicon nitride film to form a body; And Removing a portion of the substrate, the method of manufacturing a cantilever for a probe type information storage device comprising the step of floating a portion formed with a tip and a heat resistance sensor of the body. The method of claim 9,  Forming a laminated film in which a silicon film is laminated on a silicon nitride film on a substrate, Depositing a silicon nitride film on the silicon film using a low temperature chemical vapor deposition method; Bonding the silicon nitride film to a substrate; And A method of manufacturing a cantilever for a probe type information storage device, comprising the step of polishing the silicon film. The method of claim 9, The substrate is a method of manufacturing a cantilever for a probe type information storage device, characterized in that the silicon nitride film or silicon oxide film is laminated on the support layer. The method of claim 9, Forming the tip and the thermal resistance sensor, Etching the silicon film to form a tip pattern and a heat resistant sensor pattern; And A method of manufacturing a cantilever for a probe type information storage device, characterized in that it comprises the step of doping the tip pattern and the heat resistance sensor pattern. The method of claim 9, Forming the tip and the thermal resistance sensor, A method of manufacturing a cantilever for a probe type information storage device, characterized in that it further forms an ohmic contact connected to a tip or a heat resistant sensor. The method of claim 9, Forming the electrode wiring, A method of manufacturing a cantilever for a probe type information storage device, further comprising: forming an electrode pad for applying electrostatic force on the injured portion of the body.

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