KR100646069B1 - Dicing die adhesive film for semi-conductor - Google Patents

Abstract

The present invention relates to an adhesive film for semiconductors. According to the invention, the first die bonding layer; A second die adhesion layer adhered to the first die adhesion layer; And a dicing tape adhered to the second die bonding layer, wherein the sum of the thicknesses of the first die bonding layer, the second die bonding layer, and the dicing film is 200 μm or less, and the elongation of the first die bonding layer is reduced. When E1 and thickness are T1, and the elongation of the said 2nd die adhesion layer is E2 and thickness is T2, E1 <E2 and T1 <= T2 are disclosed, The adhesive film for semiconductors disclosed. As a result, while maintaining adhesion to the semiconductor wafer, while generating less burr and maintaining excellent pick-up property, it is possible to secure the fluidity of the film component to prevent pore formation during adhesion.

Adhesive Film, Die Bonding, Dicing

Description

Dicing die adhesive film for semi-conductor

The following drawings attached to this specification are illustrative of preferred embodiments of the present invention, and together with the detailed description of the invention to serve to further understand the technical spirit of the present invention, the present invention is a matter described in such drawings It should not be construed as limited to.

1 is a cross-sectional view showing an adhesive film for a semiconductor according to a preferred embodiment of the present invention.

2 is a cross-sectional view showing an adhesive film for a semiconductor according to another embodiment of the present invention.

3A to 3C are cross-sectional views illustrating a process of manufacturing an adhesive film for a semiconductor according to the present invention.

<Explanation of symbols for the main parts of the drawings>

10 ... the first die bonding layer 20 ... the second die bonding layer

30.Dicing tape 40.Organic insulator layer

The present invention relates to an adhesive film, and more particularly, to an adhesive film for a semiconductor used in a semiconductor packaging process manufactured from a silicon wafer.

In the related art, a paste adhesive is mainly used to attach a semiconductor chip to a support member. However, the paste-type adhesive has a problem in that it is difficult to control the thickness when the adhesive is applied, a problem of bleeding occurs, and a wafer level process is impossible. Therefore, recently, a film die adhesive has been used.

In general, a semiconductor process using a film-type die adhesive is subjected to a dicing process after attaching a die adhesive film to the semiconductor wafer and again attaching a separate dicing tape. Recently, a dicing die adhesive film (DDF) having both a dicing and a die bonding function has been proposed to simplify the two-time film attaching process.

The dicing die adhesive film according to the prior art has a possibility that voids may be formed because the flowability of the film is insufficient and the space between the wirings is not sufficiently filled when bonding to a support member having irregularities such as electrical wiring. These pores deteriorate the adhesion of the dicing die adhesive film, which in turn causes a decrease in the reliability of the semiconductor product.

On the other hand, the dicing die adhesive film may have a phenomenon that the semiconductor chip is separated from the die adhesive during the dicing process or the die pick-up process when the adhesive force is not sufficient, sufficient adhesive strength with the wafer during the lamination process on the back surface of the wafer Should have

In addition, the dicing die adhesive film may have a burr during the dicing process, which may cause a poor electrical signal connection during wire bonding after die bonding. Therefore, the dicing die adhesive film should have sufficient rigidity to minimize burr generation during the dicing process.

The present invention has been made to solve the above problems, while maintaining the adhesion to the semiconductor wafer, while the occurrence of burr is small and excellent pickup properties, while maintaining the fluidity of the film components to prevent pore formation during adhesion It is an object of the present invention to provide a dicing die adhesive film for semiconductors.

Dicing die adhesive film for a semiconductor according to the present invention for achieving the above object is a first die bonding layer; A second die adhesion layer adhered to the first die adhesion layer; And a dicing tape bonded on the second die bonding layer, wherein the sum of the thicknesses of the first die bonding layer, the second die bonding layer, and the dicing film is 200 μm or less, and the elongation of the first die bonding layer is E1. When the thickness is T1 and the elongation of the second die bonding layer is E2 and the thickness is T2, E1 < E2 and T1 &lt; T2.

Preferably, the first die bonding layer and the second die bonding layer include an epoxy resin, an organic filler, an inorganic filler, and a curing agent, and the amount of the inorganic filler in the first die bonding layer is greater than the amount of the inorganic filler in the second die bonding layer. You can do it a lot.

According to another embodiment of the present invention, the first die bonding layer and the second die bonding layer includes an epoxy resin, an organic filler, an inorganic filler, and a curing agent, and the amount of the organic filler in the first die bonding layer is the second die bonding layer. It can be made less than the quantity of the organic filler.

According to another embodiment of the present invention, the first die bonding layer and the second die bonding layer comprises a solid epoxy resin, a liquid epoxy resin, an organic filler, an inorganic filler and a curing agent, wherein the solid epoxy resin is the total epoxy resin weight The amount of the solid-phase epoxy resin in the first die-bonding layer may be greater than the amount of the solid-state epoxy resin in the second die-bonding layer.

On the other hand, the adhesive film for semiconductors according to the present invention has a storage modulus at 25 ° C. of 100 to 10,000 MPa, a storage modulus at 280 ° C. of 0.1 to 1000 MPa, and is smaller than the storage modulus at 25 ° C. desirable.

More preferably, the adhesive film for a semiconductor according to the present invention may further include an organic insulator layer between the first die bonding layer and the second die bonding layer.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the specification and claims should not be construed as having a conventional or dictionary meaning, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, which can be replaced at the time of the present application It should be understood that there may be various equivalents and variations.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows the adhesive film for semiconductors which concerns on this invention.

Referring to FIG. 1, the semiconductor adhesive film according to the present embodiment may include a first die bonding layer 10, a second die bonding layer 20 bonded on the first die bonding layer 10, and a second die bonding layer 20. It includes; dicing tape 30 adhered to the).

The first die attach layer 10 is a layer that directly contacts the wafer when the adhesive film for the semiconductor is laminated on the back surface of the semiconductor wafer to secure adhesiveness with the wafer. It is preferable that the first die bonding layer 10 has low adhesiveness at normal temperature, and improves adhesiveness at a temperature laminated to the wafer. In addition, a sufficient rigidity (rigidity) is secured so that burrs do not occur during the dicing process.

 The second die bonding layer 20 is interposed between the first die bonding layer 10 and the dicing tape 30 to secure adhesion reliability during die bonding. The second die bonding layer 20 has little flowability at room temperature, and has sufficient fluidity so that pores do not occur in the uneven portion formed in the support member at the die bonding temperature. To this end, the second die bonding layer 20 has a larger elongation than the first die bonding layer 10, and the thickness thereof is thicker than that of the first die bonding layer 10. That is, the following Equations 1 and 2 are satisfied.

E1 <E2

T1≤T2

Here, E1: Elongation of the first die bonding layer E2: Elongation of the second die bonding layer

        T1: thickness of the first die bonding layer T2: thickness of the second die bonding layer.

As a result, the first die adhesion layer 10 maintains sufficient adhesion with the semiconductor wafer, and the second die adhesion layer 20 prevents pore generation between the support member and secures adhesion reliability.

Meanwhile, the thickness of the second die bonding layer 20 may be variously configured according to the degree of unevenness of the supporting member within a range satisfying the condition of Equation 2.

Preferably, the first die bonding layer 10 and the second die bonding layer 20 include an epoxy resin, an organic filler, an inorganic filler, and a curing agent, and the amount of the inorganic filler contained in the first die bonding layer 10 is equal to the second. The amount of the inorganic filler contained in the die bonding layer 20 is greater than that. As a result, the elongation of the second die attach layer 20 may be greater than the elongation of the first die attach layer 10.

Alternatively, the amount of the organic filler included in the first die bonding layer 10 may be configured to be less than the amount of the organic filler included in the second die bonding layer 20. As a result, the elongation of the second die attach layer 20 may be greater than the elongation of the first die attach layer 10.

In addition, the epoxy resin included in the first die bonding layer 10 and the second die bonding layer 20 may be composed of a solid epoxy resin and a liquid epoxy resin, and the solid phase epoxy resin may be 50% by weight or more of the total epoxy resin. . In addition, the amount of the solid epoxy resin in the first die bonding layer may be configured to be greater than the amount of the solid epoxy resin in the second die bonding layer. By increasing the content of the solid epoxy having a high glass transition temperature can increase the rigidity of the first die bonding layer, it is possible to reduce the occurrence of burrs during the dicing process.

As said epoxy, bisphenol A, bisphenol F, a phenoxy resin, a cresol novolak resin, etc. can be used as a base resin.

As described above, the organic filler may adjust not only elongation but also adhesiveness or toughness, and may use acryronitrile butadiene, glycidyl acrylate or stadiene butadiene rubber.

As described above, the inorganic filler may adjust not only the elongation but also the coefficient of thermal expansion, the thermal conductivity, and the like, and silica, aluminum nitride, or alumina may be used.

 An amine type, anhydride type, an amide type, etc. can be used for the said hardening | curing agent, A latent hardening | curing agent or a hardening | curing agent with a high melting point can also be used.

Preferably, the first and second die bonding layers may further include electrical filler to further impart electrical conductivity.

The dicing tape 30 is a layer that ensures a sufficient thickness on the wafer so that the dicing process is more effectively performed. The dicing tape 30 is a portion separated from the first and second die bonding layers during the die picking process after the dicing process. The dicing tape 30 may be a polyester, polyethylene, polypropylene, polyvinylacetate, or polyolefin-based film coated with an acrylic adhesive.

In addition, the total thickness D of the adhesive film for semiconductors shall be 200 micrometers or less.

On the other hand, the adhesive film for the semiconductor is preferably a storage modulus (storage modulus) of 100 to 10,000MPa at 25 ℃ after the curing (curing) process that follows the dicing process and the die pickup process. This can buffer the thermal stress generated from the difference in the different coefficients of thermal expansion after the curing process, thereby improving the reliability of the semiconductor chip. In addition, the storage modulus at 280 ℃ is preferably 0.1 to 1,000 MPa and less than the storage modulus of 25 ℃. This is because if the storage modulus value is 0.1 MPa or less at high temperature, the internal response is too low to ensure the reliability of the product, and when the storage modulus is 1,000 MPa or more, thermal shock cannot be effectively absorbed.

2 is a cross-sectional view showing an adhesive film for a semiconductor according to another embodiment of the present invention. In FIG. 2, the same reference numerals as in the above-described drawings indicate the same members having the same functions, and detailed description thereof will be omitted.

Referring to FIG. 2, the adhesive film for semiconductor according to the present exemplary embodiment may further include an organic insulator layer 40 interposed between the first and second die adhesive layers 10 and 20. The organic insulator layer 40 may increase the storage modulus or lower the coefficient of thermal expansion, and may minimize external impact such as vibration during wire bonding.

Preferably, the organic insulator layer 40 is preferably an organic material having a surface resistivity of 10 ¹⁰ ohm or more, and a polyimide film or polyethylene terephthalate may be used.

Hereinafter, a method of manufacturing an adhesive film for a semiconductor having the above configuration will be described with reference to FIGS. 3A to 3C.

Referring to FIG. 3A, first, the first die adhesion layer 10 as described above is coated on one surface of the release-treated base film 11, and the protective film 12 is exposed on the exposed surface of the first die adhesion layer 10. Cover. Then, as shown in FIG. 3B, the second die bonding layer 10 is coated on one surface of the base film 21 and the protective film 22 is covered on the exposed surface. For example, the base films 11 and 21 and the protective films 12 and 22 may use, for example, polyethylene terephthalate or polyethylene films.

Thereafter, as shown in FIG. 3C, the first die bonding layer 10 and the second die bonding layer 20 of the coated form are laminated. That is, the protective film 12 of the first die bonding layer 10 and the protective film 22 of the second die bonding layer 20 are peeled off and the adhesive layers 10 and 20 exposed are mutually laminated. Thereafter, the base film 21 attached to the second die attach layer 20 is removed and laminated with the dicing tape 30, and then the base film 11 attached to the first die attach layer 10 is removed. 1 to prepare an adhesive film for a semiconductor as shown in FIG.

 Hereinafter, examples will be described in detail to help understand the present invention. However, embodiments according to the present invention can be modified in many different forms, the scope of the invention should not be construed as limited to the following examples. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art.

In Examples 1 to 3, a solid epoxy resin, a liquid epoxy resin, an organic filler, an inorganic filler, and other resins are mixed in the ratio as shown in Table 1 below to prepare first and second die bonding layers, respectively. Then, as described above, the first and second die bonding layers were laminated with each other, and the dicing tape was laminated again to prepare a dicing die bonding film.

Example 1 Example 2 Example 3 1st die adhesion layer 2nd die adhesion layer 1st die adhesion layer 2nd die adhesion layer 1st die adhesion layer 2nd die adhesion layer Solid phase epoxy (wt%) 40 33 40 33 33 40 Liquid Epoxy (wt%) 31 33 31 33 33 31 Solid phase epoxy ratio (wt%) 56 50 56 50 50 56 Organic filler (wt%) 24 29 24 29 29 24 Other resin (wt%) 5 5 5 5 5 5 all 100 100 100 100 100 100 Inorganic filler (phr) 9 5 9 5 5 9 Thickness (um) 10 15 20 5 10 15

In Example 1 to Example 3, as shown in Table 1, whether the void (poid) generation, elongation, storage modulus, burr generation and solder reflow crack generation was investigated and shown in Table 2. Here, the pore occurrence is to evaluate the fluidity to fill the unevenness of the support member was measured after the adhesive film is attached to the chip attached to the printed circuit board with the x by measuring the occurrence of pores. Elongation was measured using a universal testing machine (UTM), and storage modulus was measured using a dynamic mechanical thermal analyzer (DMTA) manufactured by Rheometric. In addition, the chip and support members are bonded and cured using a dicing die-bonding film, and are left to stand for one week in constant temperature and humidity conditions (85 ° C / 85 relative humidity). After passing, the crack was observed.

Example 1 Example 2 Example 3 First die adhesive layer 2nd die adhesion layer First die adhesive layer 2nd die adhesion layer First die adhesive layer 2nd die adhesion layer Elongation (%) 75 80 75 80 80 75 Storage modulus (25 ℃) MPa 583 625 605 Storage modulus (280 ° C) MPa 3.7 4 3.9 Void generation Less plenty plenty Burr occurrence Less Less Less Solder Reflow Crack none none none

Referring to Tables 1 and 2, in Example 1, the ratio of the solid phase to the epoxy phase is 50% or more, the content of the solid epoxy resin and the inorganic filler of the second die bonding layer is higher than that of the first adhesive layer, and the content of the organic filler is It consists of less than one die bonding layer. As a result, the elongation of the first die bonding layer is smaller than that of the second die bonding layer, and the thickness thereof is also thinner than that of the second die bonding layer. At this time, in Example 1 it can be seen that the occurrence of burr is less by securing sufficient stiffness, the flowability is improved is less generation of pores. However, looking at the second embodiment, even if the fluidity is secured by having the same content as in the first embodiment, when the thickness of the second die bonding layer is thin, the gap between the supporting members is not effectively filled, so that the generation of pores increases. In addition, referring to Example 3, in contrast to Example 1, the volume of the epoxy resin ratio inorganic filler in the solid phase of the first die bonding layer is less than that of the second die bonding layer, and the organic filler is more than the second die bonding layer. In this case, too, it can be seen that the occurrence of air transfer is large.

On the other hand, Examples 1 to 3 have a storage modulus of the appropriate range, it can be seen that no crack occurs during solder reflow.

As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto and is intended by those skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalents of the claims to be described.

As described above, according to the present invention, in the adhesive film for semiconductors used in the semiconductor packaging process, pore formation during adhesion is maintained by maintaining the adhesive force with the semiconductor wafer and ensuring the fluidity of the film components with little burr occurrence. You can prevent it. As a result, adhesion reliability of the dicing die adhesive film for semiconductors can be secured, thereby reducing defects of the semiconductor chip.

Claims (6)

A first die bonding layer; A second die adhesion layer adhered to the first die adhesion layer; And And a dicing tape adhered to the second die attach layer. The first die bonding layer and the second die bonding layer comprises an epoxy resin, an organic filler, an inorganic filler and a curing agent, The sum of the thicknesses of the first die bonding layer, the second die bonding layer, and the dicing film is 200 μm or less, When the elongation of the first die bonding layer is E1 and the thickness is T1, and the elongation of the second die bonding layer is E2 and the thickness is T2, A dicing die adhesive film for semiconductors, wherein E1 < E2 and T1 &lt; The dicing die adhesive film for semiconductor according to claim 1, wherein the amount of the inorganic filler in the first die bonding layer is larger than the amount of the inorganic filler in the second die bonding layer. The dicing die adhesive film for semiconductor according to claim 1, wherein the amount of the organic filler in the first die bonding layer is less than the amount of the organic filler in the second die bonding layer. The method of claim 1, wherein the first die bonding layer and the second die bonding layer, Solid epoxy resin, liquid epoxy resin, organic filler, inorganic filler and curing agent, The solid epoxy resin is 50% by weight or more relative to the total weight of the epoxy resin, the amount of the solid epoxy resin in the first die bonding layer is greater than the amount of solid epoxy resin in the second die bonding layer, the dicing die bonding for semiconductors film. The method according to any one of claims 1 to 4, Storage modulus at 25 ° C. is between 100 and 10,000 MPa, Dicing die adhesive film for semiconductors, characterized in that the storage modulus at 280 ℃ is 0.1 to 1,000MPa, less than the storage modulus at 25 ℃. The method according to any one of claims 1 to 4, A dicing die adhesive film for semiconductors, further comprising an organic insulator layer comprising a polyimide film or polyethylene terephthalate between the first die bonding layer and the second die bonding layer.

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