KR100630373B1 - Gas reaction chamber for preventing particles sticking on a semiconductor wafer - Google Patents

Gas reaction chamber for preventing particles sticking on a semiconductor wafer Download PDF

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KR100630373B1
KR100630373B1 KR1020000057894A KR20000057894A KR100630373B1 KR 100630373 B1 KR100630373 B1 KR 100630373B1 KR 1020000057894 A KR1020000057894 A KR 1020000057894A KR 20000057894 A KR20000057894 A KR 20000057894A KR 100630373 B1 KR100630373 B1 KR 100630373B1
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reaction chamber
semiconductor wafer
main body
gas
gas reaction
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KR1020000057894A
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Korean (ko)
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KR20020026669A (en
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서대만
김종식
안계홍
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삼성전자주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명은 반도체 웨이퍼 위에 불순물 입자가 부착되는 것을 방지하기 위한 가스 반응실에 관한 것으로서, 공정이 진행되는 본체, 본체에 가스를 공급하는 가스 공급부, 본체 내부를 저압으로 유지하는 진공 펌프, 및 반도체 웨이퍼의 뒷면을 고정시키는 웨이퍼 고정부를 포함하는 가스 반응실에 있어서, 웨이퍼 고정부는 본체 내부의 상단부에 위치하여 반도체 웨이퍼의 앞면이 아래쪽을 향하도록 고정시키며, 진공 펌프는 본체 외부의 하단부에 연결되는 것을 특징으로 하는 가스 반응실을 제공한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas reaction chamber for preventing impurity particles from adhering onto a semiconductor wafer. The present invention relates to a gas reaction chamber, a gas supply unit for supplying gas to a body, a vacuum pump for maintaining a low pressure inside a body, and a semiconductor wafer. In the gas reaction chamber comprising a wafer holding portion for fixing the back of the wafer, the wafer holding portion is located in the upper end of the inside of the main body to fix the front side of the semiconductor wafer facing downward, the vacuum pump is connected to the lower end of the outside of the main body A gas reaction chamber is provided.

가스 반응실, 반도체 웨이퍼, 불순물, 확산, 화학기상반응Gas reaction chamber, semiconductor wafer, impurities, diffusion, chemical vapor reaction

Description

반도체 웨이퍼에 불순물 입자가 부착되는 것을 방지하기 위한 가스 반응실{Gas reaction chamber for preventing particles sticking on a semiconductor wafer}Gas reaction chamber for preventing particles sticking on a semiconductor wafer

도 1은 종래 기술에 따른 가스 반응실을 나타내는 단면도.1 is a cross-sectional view showing a gas reaction chamber according to the prior art.

도 2는 본 발명의 실시예에 따른 가스 반응실을 나타내는 단면도.2 is a cross-sectional view showing a gas reaction chamber according to an embodiment of the present invention.

<도면의 주요 부분에 대한 부호 설명><Description of the symbols for the main parts of the drawings>

100; 가스 반응실 111; 본체100; Gas reaction chamber 111; main body

112; 웨이퍼 고정부 114; 반도체 웨이퍼112; Wafer holding portion 114; Semiconductor wafer

116; 가스 공급부 118; 진공 펌프116; Gas supply 118; Vacuum pump

본 발명은 가스 반응실에 관한 것으로서, 보다 구체적으로는 반도체 웨이퍼 위에 불순물 입자가 부착되는 것을 방지하기 위한 가스 반응실에 관한 것이다.The present invention relates to a gas reaction chamber, and more particularly, to a gas reaction chamber for preventing impurity particles from adhering onto a semiconductor wafer.

도 1은 종래 기술에 따른 가스 반응실을 나타내는 단면도이다. 도 1에서 화살표는 본체 내부에서 가스가 유동하는 방향을 나타낸다.1 is a cross-sectional view showing a gas reaction chamber according to the prior art. In FIG. 1, an arrow indicates a direction in which gas flows inside the main body.

도 1을 참조하면, 가스 반응실(10)은 본체(11), 웨이퍼 고정부(12), 가스 공 급부(16), 진공 펌프(18)로 이루어진다. 이러한 가스 반응실(10)에서 반도체 웨이퍼(14)에 도펀트(dopant)를 주입시키는 확산 공정이나 반도체 웨이퍼(14) 위에 산화막, 질화막 등의 막질을 형성하는 화학기상반응(chemical vapor deposition) 공정이 진행된다. 이러한 공정은 진공 펌프(18)에 의해서 가스 반응실(10)의 본체(11) 내부가 감압되고, 가스 공급부(16)에서 도펀트를 함유하는 가스 또는 반응 가스가 본체(11)로 유입되어 진행된다.Referring to FIG. 1, the gas reaction chamber 10 includes a main body 11, a wafer fixing part 12, a gas supply part 16, and a vacuum pump 18. In such a gas reaction chamber 10, a diffusion process of injecting a dopant into the semiconductor wafer 14 or a chemical vapor deposition process of forming a film such as an oxide film or a nitride film on the semiconductor wafer 14 is performed. do. In this process, the inside of the main body 11 of the gas reaction chamber 10 is depressurized by the vacuum pump 18, and the gas or the reaction gas containing the dopant is introduced into the main body 11 from the gas supply unit 16. .

공정이 진행되기 전에 반도체 웨이퍼(12)는 집적회로가 형성되는 앞면이 중력에 대해 위쪽을 향한 채 웨이퍼 고정부(12) 위에 놓이게 된다. 그런데, 진공 펌프(18)가 본체(11)의 하단부에 연결되어 있으므로 반응 중 발생한 불순물 입자의 이동 방향이 본체(11)의 아래쪽을 향하게 된다. 따라서, 앞면이 위쪽을 향한 채 반도체 웨이퍼(14)가 본체(11)의 하단부에 위치한 웨이퍼 고정부(12) 위에 놓여 있으므로 불순물 입자가 반도체 웨이퍼(14)의 앞면에 부착될 수 있다. 반도체 웨이퍼(14)의 앞면은 미세한 집적회로가 형성되는 부분이므로 이러한 불순물 입자는 집적회로의 동작에 오류를 일으키게 된다.Before the process proceeds, the semiconductor wafer 12 is placed on the wafer holding part 12 with the front face on which the integrated circuit is formed facing upward with respect to gravity. However, since the vacuum pump 18 is connected to the lower end of the main body 11, the moving direction of the impurity particles generated during the reaction is directed downward of the main body 11. Therefore, since the semiconductor wafer 14 is placed on the wafer holding part 12 positioned at the lower end of the main body 11 with the front face upward, impurity particles can be attached to the front surface of the semiconductor wafer 14. Since the front surface of the semiconductor wafer 14 is a part where a fine integrated circuit is formed, such impurity particles cause an error in the operation of the integrated circuit.

따라서, 본 발명의 목적은 가스 반응실 내에서 공정이 진행되는 중에 발생하는 불순물 입자가 반도체 웨이퍼 위에 부착되지 않는 구조의 가스 반응실을 제공하는 데에 있다.Accordingly, an object of the present invention is to provide a gas reaction chamber having a structure in which impurity particles generated during the process in the gas reaction chamber do not adhere to the semiconductor wafer.

이러한 목적을 달성하기 위해서 본 발명의 실시예는 공정이 진행되는 본체, 본체에 가스를 공급하는 가스 공급부, 본체 내부를 저압으로 유지하는 진공 펌프, 및 반도체 웨이퍼의 뒷면을 고정시키는 웨이퍼 고정부를 포함하는 가스 반응실에 있어서, 웨이퍼 고정부는 본체 내부의 상단부에 위치하여 반도체 웨이퍼의 앞면이 아래쪽을 향하도록 고정시키며, 진공 펌프는 본체 외부의 하단부에 연결되는 것을 특징으로 하는 가스 반응실을 제공한다.In order to achieve the above object, an embodiment of the present invention includes a main body in which a process is performed, a gas supply unit supplying gas to the main body, a vacuum pump to maintain the inside of the main body at low pressure, and a wafer fixing unit fixing the rear surface of the semiconductor wafer. In the gas reaction chamber, the wafer fixing part is located at the upper end of the inside of the main body to fix the front face of the semiconductor wafer downward, and the vacuum pump provides a gas reaction chamber, characterized in that connected to the lower end of the outside of the main body.

이하, 첨부 도면을 참조하여 본 발명의 실시예를 보다 상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.

도 2는 본 발명의 실시예에 따른 가스 반응실을 나타내는 단면도이다. 도 2에서 화살표는 본체 내부에서 가스가 유동하는 방향을 나타낸다.2 is a cross-sectional view showing a gas reaction chamber according to an embodiment of the present invention. In FIG. 2, an arrow indicates a direction in which gas flows inside the main body.

도 2를 참조하면, 가스 반응실(100)은 본체(111), 웨이퍼 고정부(112), 가스 공급부(116), 진공 펌프(118)로 이루어진다. 진공 펌프(118)에 의해서 본체(111) 내부가 저압으로 유지되고, 가스 공급부(116)에서 본체(111) 내로 가스가 유입되면 본체(111) 내에 위치하는 반도체 웨이퍼(114)에 대해서 확산 공정이나 화학기상증착 공정이 진행된다. 가스 반응실(100)에서 반도체 웨이퍼(114)는 집적회로가 형성되는 앞면이 중력에 대해 아래쪽을 향하도록 고정된다. 가스 반응실(100)의 구조를 살펴보면 다음과 같다.Referring to FIG. 2, the gas reaction chamber 100 includes a main body 111, a wafer fixing part 112, a gas supply part 116, and a vacuum pump 118. When the inside of the main body 111 is maintained at a low pressure by the vacuum pump 118, and the gas flows into the main body 111 from the gas supply unit 116, the diffusion process is performed on the semiconductor wafer 114 located in the main body 111. Chemical vapor deposition process proceeds. In the gas reaction chamber 100, the semiconductor wafer 114 is fixed so that the front surface on which the integrated circuit is formed faces downward with respect to gravity. Looking at the structure of the gas reaction chamber 100 as follows.

웨이퍼 고정부(112)는 본체(111) 내부의 상단부에 위치하며, 반도체 웨이퍼(114)를 고정시키는 부분이 아래쪽을 향한다. 반도체 웨이퍼(114)는 이러한 웨이퍼 고정부(112)에 의해서 집적회로가 형성되지 않는 뒷면이 고정되므로 집적회로가 형성되는 앞면은 중력에 대해 아래쪽을 향하게 된다. 가스 공급부(116)는 진 공 펌프(118) 반대쪽의 본체(111) 외부, 특히 본체(111)의 상단부에 가스관에 의해서 본체(111)와 연결된다. 또한, 진공 펌프(118)는 본체(111) 외부에서 본체(111)의 하부, 특히 하단부에 진공관(vacuum line) 등에 의해 본체(111)와 연결된다.The wafer fixing part 112 is positioned at the upper end of the inside of the main body 111, and the part fixing the semiconductor wafer 114 faces downward. Since the back surface of the semiconductor wafer 114 is not formed by the wafer fixing part 112 is fixed, the front surface on which the integrated circuit is formed is directed downward with respect to gravity. The gas supply part 116 is connected to the main body 111 by a gas pipe outside the main body 111 on the opposite side to the vacuum pump 118, in particular, at the upper end of the main body 111. In addition, the vacuum pump 118 is connected to the main body 111 by a vacuum line or the like at the lower part of the main body 111, particularly at the lower end, outside the main body 111.

따라서, 가스 공급부(116)에서 공급되는 가스는 반도체 웨이퍼(114)의 아래쪽을 지나가게 된다. 반도체 웨이퍼(114)의 앞면이 아래쪽을 향할 뿐만 아니라, 가스가 반도체 웨이퍼(114)의 아래쪽을 지나가고 진공 펌프(118)가 본체(11)의 하부에 연결되므로 공정 중 발생하는 불순물 입자가 반도체 웨이퍼(114)의 앞면에 부착될 확률은 현저히 감소된다.Therefore, the gas supplied from the gas supply part 116 passes under the semiconductor wafer 114. In addition to the front face of the semiconductor wafer 114 facing down, since the gas passes under the semiconductor wafer 114 and the vacuum pump 118 is connected to the lower portion of the main body 11, impurity particles generated during the process are the semiconductor wafer ( The probability of attachment to the front side of 114) is significantly reduced.

따라서, 본 발명에 따르면 공정 중 발생하는 불순물 입자가 반도체 웨이퍼의 앞면에 부착될 가능성이 감소하므로, 불순물 입자로 인하여 집적회로에 발생하는 불량을 감소시킬 수 있다.Therefore, according to the present invention, since the possibility that the impurity particles generated during the process adhere to the front surface of the semiconductor wafer is reduced, defects occurring in the integrated circuit due to the impurity particles can be reduced.

Claims (2)

공정이 진행되는 본체;A body in which the process proceeds; 상기 본체에 가스를 공급하는 가스 공급부;A gas supply unit supplying gas to the main body; 상기 본체 내부를 저압으로 유지하는 진공 펌프; 및A vacuum pump which maintains the inside of the main body at low pressure; And 반도체 웨이퍼의 뒷면을 고정시키는 웨이퍼 고정부를 포함하는 가스 반응실에 있어서,In the gas reaction chamber comprising a wafer holding portion for fixing the back side of the semiconductor wafer, 상기 웨이퍼 고정부는 상기 본체 내부의 상단부에 위치하여 상기 반도체 웨이퍼의 앞면이 아래쪽을 향하도록 고정시키며, 상기 진공 펌프는 상기 본체 외부의 하단부에 연결되는 것을 특징으로 하는 가스 반응실.The wafer fixing part is located in the upper end of the inside of the main body to fix the front surface of the semiconductor wafer facing downward, the gas pump characterized in that the vacuum pump is connected to the lower end of the outside of the main body. 제 1항에 있어서, 상기 가스 공급부는 상기 본체 외부의 상단부에 연결되는 것을 특징으로 하는 가스 반응실.The gas reaction chamber of claim 1, wherein the gas supply part is connected to an upper end part of the outside of the main body.
KR1020000057894A 2000-10-02 2000-10-02 Gas reaction chamber for preventing particles sticking on a semiconductor wafer KR100630373B1 (en)

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