KR100622835B1 - pattern amendment appratus and method - Google Patents

Abstract

An apparatus and a method of correcting pattern defects on a substrate having a wide range of thicknesses and shapes are provided.

The substrate table 10, the laser beam output device 1, the optical system 21 having a laser beam having a small beam diameter, and the movement of the table 10 so that the beam scans the entire region of the crystal region. It is set as the pattern correction apparatus provided with the table control means to control.

Board table, output device, laser light, optical system, pattern correction device

Description

Pattern amendment appratus and method

1 is a block diagram illustrating a pattern correction apparatus of the present invention.

Fig. 2A is a diagram showing a method of setting a pattern correction region of the present invention, showing a short circuit portion generated during wiring.

Fig. 2B is a diagram showing a method for setting pattern correction projections of the present invention, showing a scanning method of laser light for removing short circuits.

3 is a diagram showing an example of the overall configuration of a device of the present invention;

4 is a diagram showing the influence of wavelength on the laser light absorption of chromium forming an electrode line and glass which is a substrate material.

Fig. 5 is a diagram showing the relationship between the area ratio of chromium and glass and the laser light output for performing proper firing.

6 is an overall view of a device for correcting a pattern of the present invention.

FIG. 7 is a diagram showing a configuration of a laser optical system of the present invention and an observation optical system coaxially with the laser optical system. FIG.

8 is an enlarged view of an irradiation area of a laser beam;

9 shows a conventional pattern correction apparatus.

 * Description of the symbols for the main parts of the drawings *

1: laser light output device 2: output control mechanism

3: beam splitter 4: slit mechanism

5: beam splitter 6: imaging lens

7: beam splitter 8: objective lens

9: work 10: XY table

11: transmission illumination light 12: fall illumination light

13: CCD camera 14: slit light

15: chuck stand 16: laser light

18: temperature measuring instrument 21: laser optical system

22: Z-axis table 26: paste application mechanism

31: control unit 32: control computer

33: host computer 40: paste portion

41: laser light irradiation area 42: glass part

43: pattern portion 51, 52: electrode wire

53: paragraph p, q, r: 3 points specifying the scanning area to be corrected

(Technical field to which the invention belongs)
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a correction apparatus or a correction method which performs both the removal, addition, or removal and addition of a pattern of a certain shape in accordance with the property of a defect portion of a pattern formed on a substrate, among which a liquid crystal display (Liquid Crystal) The present invention relates to a device for correcting a pattern formed on a substrate of a flat display such as a display (LCD) or a plasma display panel (PDP) and a printed circuit board, and a method of correcting the pattern.

(Conventional technology)

As the precision of the pattern formed on the LCD substrate is promoted, the frequency of occurrence of defects requiring the removal of a pattern of a certain shape such as short circuit or thickening of the pattern in the signal drain wiring or gate line in the pattern is increasing. On the other hand, due to the excessive etching conditions or the mixing of foreign matters, defects that require the addition of a pattern of a certain shape such as disconnection or omission of the pattern also occur. The tendency of defect generation in both of these tends to become remarkable as the substrate becomes larger and becomes more precise, and the line width of the electrode line becomes smaller.

First, the case where the defect which requires removal of the pattern of a certain shape generate | occur | produces is demonstrated. In the case where the above defect occurs, the apparatus as shown in Fig. 9 is used to correct the defect, and the defect portion has been deleted.

That is, the laser beam of the giant pulse emitted from the Yttrium Aluminum Garnet (YAG) laser light output device 101 provided with the electro-optic Q switch (EOQ switch) is first output control mechanism 102 disposed on the laser optical system 121. The power is controlled by the slit mechanism 104, and the slit mechanism 104 is in the form of a beam cross-sectional shape adapted to the shape of the defect. Thereafter, through the imaging lens 106 and the objective lens 108, it is irradiated as a pulse on the workpiece | work 109 which is a board | substrate containing the defect part of a pattern.

On the other hand, the workpiece 109 is mounted on the XY stage 110 and can be moved to a desired position. At this time, the pattern defect part and the laser beam irradiation area can be observed with the CCD camera 113 using the transmission illumination light 111 or the fall illumination light 112. Moreover, also with the said slit light 114, the cross-sectional shape of the laser beam of the pattern defect part vicinity, ie, the laser beam irradiation shape, can be confirmed.

Next, the case where the addition of the pattern of a certain shape or the defect (defects, such as a disconnection) which requires formation arises is demonstrated.

Correction of defects such as disconnection and the like is performed by transferring the paste to the defect portion and firing, as disclosed in JP-A-8-292442 and the like. As a method of firing the paste, a method of baking the entire substrate in an electric furnace or the like, and partially baking only the paste portion by a YAG (Yttrium Aluminum Garnet) laser, a YLF (LiYF ₄ ) laser, a semiconductor laser, a CO ₂ laser, or the like have.

The correction of eliminating the large area (for example, 100 μm in diameter) by one shot or a few shots of the laser pulse of the giant pulse emitted from the YAG laser with the EOQ switch is effective when the pattern is a thin film of 1 μm or less. . However, if the film thickness of the pattern exceeds several micrometers, while the pattern to be deleted is not completely removed, the irradiation of the giant pulsed laser light causes deterioration of the electrode material and the like. It was sometimes difficult. In this case, the defective part of the pattern is not completely corrected, which causes a malfunction.

On the other hand, in the case of the modification in which a pattern of a certain shape is added, if a method of firing the entire substrate using an electric furnace is adopted, as the substrate is enlarged, it is inevitable to increase the size of equipment such as an electric furnace. It is inevitable. Further, not only the price but also the entire substrate is fired, such that a large-sized substrate is deformed due to heat.

When baking using irradiation of a laser beam etc., a compact apparatus can be comprised by mounting a laser beam output device in a crystal | crystallization apparatus. However, depending on the ratio between the pattern portion and the substrate portion on which the pattern is not formed in the laser light irradiation region, there is a case where baking is not performed properly.

Accordingly, a first object of the present invention is to provide a pattern correction apparatus and a correction method that can easily correct a pattern defect portion requiring deletion of a certain shape having a wide thickness and shape, thickness reduction, and the like, and another object of the present invention. The present invention provides a pattern correcting apparatus and a method for correcting a pattern that can be fired by appropriate laser light irradiation at all times regardless of the magnitude of the ratio of the pattern portion in the laser light irradiation area in the correction of the defect portion requiring the addition of the.

In addition, the object different from the above is when there is a point where deletion and addition of a certain shape are mixed, or when there is no such mixing, and in view of the nature of the defect, it is preferable to add after deletion, or after the addition is large. When it is preferable to delete, the pattern correcting apparatus can be modified to delete a certain shape and then add a certain shape as necessary, or to make a correction by trimming by adding a certain shape to a predetermined shape and deleting it. To provide a fix.

(Means to solve the task)

In the pattern correction apparatus according to the first aspect of the present invention, by modifying a pattern formed on a substrate with a laser beam, a table movable in a plane supporting the substrate, a laser beam output device for emitting a laser beam, and A pattern correction means comprising: an optical system for condensing a laser beam as a beam having a diameter smaller than the pattern correction area, and a table control means for controlling the movement of the table so that the beam scans the entire area of the pattern correction area; The configuration of the device is assumed.

With the above configuration, since the laser beam is focused on a part of the pattern correction region, and the laser beam with high energy density sequentially scans the entire region of the correction region, the correction is completely made even at the point where the film thickness is thick. A beautiful cut surface is obtained.

The laser beam is a continuous wave laser beam, and the movement of the table scanning the entire region of the pattern correction region is often continuous.

By using the laser beam as described above, the cut surface is smooth and has a good feeling of cut, in accordance with the effect of the heat of the laser beam being filled, the heat processing at the time of correction, and the movement of the substrate continuously.

In addition, the laser beam is a series of pulsed laser beams having a frequency of 500 Hz or more, and the movement of the table scanning the entire region of the pattern correction region may be continuous.

The pulse frequency laser beam of such a high frequency does not change into a laser beam of a continuous wave substantially, and a thermal processing element is high and a favorable feeling of cut can be ensured. It is as mentioned above that a smooth cut surface is obtained by continuously moving the table.

In many cases, the beam diameter smaller than the crystal region of the laser beam is set to 30 µm or less on the pattern.

By narrowing the beam diameter to 30 占 퐉 or less on the pattern, the energy density of the laser light in the laser light irradiation area can be increased, and it is possible to reliably fix the substrate while moving the substrate even in a pattern having a thick film thickness.

The addition, which is cut sense if you get a good modification result, the laser light emitting device is a YAG or YLF (LiYF ₄₎ laser beam emitting device, light emitted from the laser light, the YAG or YLF laser beam emitting device 2 Harmonic laser light, whose wavelength is 500-600 nm shall be used.

By using said laser beam, favorable cut feeling is acquired, moving a board | substrate. Moreover, the said laser beam can also be used as a laser beam of a continuous wave, and can also be used as pulse-shaped laser beam of the frequency of 500 Hz or more.

In addition, the pattern correction apparatus described above often includes a CCD camera for pattern observation, an image processing mechanism for processing an image obtained from the CCD camera, and means for determining a scanning area to be corrected based on the image. ． By providing the above mechanism, the inclined scan and the scan area of a large area can be easily set, so that even a defective part of a complicated shape requiring inclined machining or the like can be corrected without lowering the work efficiency.

The optical axis of the optical system for pattern observation containing the said CCD camera is often made coaxial with the optical axis of the optical system which condenses a laser beam.

By making it coaxial, it becomes unnecessary to move the optical system of a laser beam for correction after recognizing the correction point of a pattern. As a result, there is no need to align the correction point with the optical system of the laser beam, thereby improving accuracy and efficiency of the correction position.

The above apparatus is used to implement the following modification method which is the basis of the present invention. It is a pattern correction method which modifies the pattern formed on the board | substrate with a laser beam, Comprising: The laser beam which made the beam diameter smaller than the correction region of a pattern is irradiated to the correction region of the pattern, and the beam is before the pattern correction region. This is a method of controlling and moving a table on which a substrate is mounted so as to scan an area.

By the above-described method, it is possible to reliably and beautifully cut a large film thickness and a large-area correction region.

In addition, it is good to apply the said pattern correction method to the pattern whose film thickness is 1 micrometer or more.

In the conventional laser shot of one pulse or several pulses, the region to be corrected which could not be completely corrected can be reliably corrected by the above correction method, and the validity of the correction method can be shown.

The pattern correction apparatus in another aspect of the present invention is a pattern correction apparatus that observes a pattern formed on a substrate by optical means for observation, recognizes a correction point, and applies a paste to the correction point to correct the laser beam. From the output device, the laser optical system for condensing the laser light on the substrate, the area obtained by combining the pattern portion and the paste portion in the region irradiated with the laser light from the image obtained by the optical means for observation, and the pattern is formed. The image processing mechanism which calculates | requires the ratio with the area | region of the board | substrate which is not made is provided, and the means which determines the baking conditions by irradiating a laser beam to a paste vicinity from the ratio.

By providing such a means, the temperature of the paste baked by laser light irradiation becomes constant irrespective of the ratio of the area which combined the pattern part and paste part in a laser light irradiation area, and the area of a board | substrate part, Even if it is possible. In addition, since the substrate is not baked in an electric furnace or the like, it does not deform even when the substrate is enlarged.

Moreover, the laser light irradiation energy can be controlled by the output control mechanism which passes during a laser beam emission apparatus and laser beam propagation among laser beam irradiation conditions.

The correction device for the pattern is often provided with a temperature measuring mechanism for irradiating a laser beam to measure the temperature of the firing irradiation region and a means for determining the irradiation condition of the laser beam based on the temperature measurement result.

By further providing the above mechanism, the paste can be more stably baked.

The laser beam output device and the laser optical system in the above-described pattern correction device are often used to remove excess portions of the pattern formed on the substrate.

The above functions are also provided in the laser beam output device and the optical system, whereby defects of various forms can be corrected appropriately.

The above apparatus is used when implementing the pattern correction method of the present invention described below. In the pattern correction method of this invention, the pattern formed on the board | substrate is observed by optical means for observation, a correction point is recognized, a paste is apply | coated to the correction point, the paste is irradiated, a laser beam is baked, and correction is carried out. As a method for correcting a pattern, a ratio of an area obtained by combining the pattern portion and the paste portion in the region to which the laser light is irradiated with the area of the substrate portion where the pattern is not formed is obtained from the image obtained by the optical means for observation. In the case where the absorption of the pattern material with respect to the laser beam is larger than that of the substrate material, the irradiation energy of the laser light is increased in a small range, and as the ratio increases, the irradiation energy of the laser light is lowered.

By the above method, the temperature of the paste fired by laser light irradiation is constant regardless of the ratio between the area where the pattern portion and paste portion are combined in the laser light irradiation area and the area of the substrate portion, and proper firing can be performed at any time. Done.

The pattern correcting method includes a step of irradiating a laser beam to measure a temperature in a laser beam irradiation region that is being fired, and in many cases, the irradiation energy of the laser beam is increased or decreased based on the temperature measurement result.

By further controlling the laser light irradiation conditions on the basis of the temperature information during the laser light irradiation, the firing of the paste more stable becomes possible.

In addition, in all the correction apparatuses and correction methods of the present invention described above, the correction is performed when only a certain shape is deleted, or when only a certain shape is added, or after a certain shape is deleted, a necessary addition of a certain shape is performed. Or a case where a predetermined shape is deleted after largely adding a predetermined shape.

(Embodiment 1)

1 is a block diagram illustrating a pattern correction apparatus of the present invention. The output of the laser light 16 emitted from the continuous laser light output device 1 (including pulse lasers of 500 Hz or more) such as YAG or YLF is controlled by the output control mechanism 2, and the beam splitters 5 and 7 ), The light is collected by the objective lens 8 at a small beam diameter, for example, a beam diameter of 10 占 퐉, and irradiated onto the work 9.

On the other hand, based on the scanning area set from the personal computer (not shown) side, the XY table 10 is synchronously operated, so that a wide range of defects can be corrected regardless of the thickness or shape of the scanning area.

In addition, since the CCD camera 13 is provided, the state during correction can be accurately monitored.

At the time of setting the irradiation area to be corrected by deleting the short circuit part, as shown in FIG. 2A, three points (p, q, r) are displayed on the personal computer screen obtained from the CCD camera so as to cope with inclined processing. Input to the image. By this input, for example, a parallelogram formed by the pq direction and the pr direction is registered as the scanning area. In addition, when the two points set initially are p and q, as shown in FIG. 2B, main scanning is performed according to the direction pq, and it can be determined that the direction pr is scanned as a sub scanning direction. . Therefore, a simple setting can be made and work efficiency can be improved.

For example, as shown in FIG. 2B, the laser beam diameter is scanned and corrected sequentially, with respect to the short circuit part 53 which shorts the electrode lines 51 and 52 of FIG. 2A, and electrode lines 5 1 and 52 are Are separated. Such correction can be efficiently performed by easily setting the scanning area even if the film thickness of the pattern portion to be corrected is thick or wide.

Parameters of the correction condition include the power of the laser beam, the overlapping range (scan density) between the beams to be scanned, the speed of the XY table, and the like, and these settings can be arbitrarily set on the personal computer side. Thus, a very simple and reliable pattern correction is possible.

It is a figure which shows the example of the whole structure of the apparatus of the present invention mentioned above. As described above, a personal computer can be used as the host computer 33, and the above-mentioned scanning area and scanning conditions can be easily set. In FIG. 3, the workpiece | work 9 is fixed to the chuck | zipper 15, the chuck | zipper 15 is mounted on the XY table 10, and the XY surface inside is controlled by the control computer 32 and the control apparatus 31. In FIG. It moves under control.

The "table control means" as used in the present invention is attached to the control device 31, the control computer 32, and the host computer 33.

The optical system 21 of the laser beam can be focused by controlling the Z-axis table 22.

(Embodiment 2)

Next, the correction of the defect which requires the addition of a pattern of a certain shape such as disconnection will be described.

When the ratio between the area where the pattern portion and the paste portion forming the constant portion are formed in the irradiation area of the laser light changes, the firing by appropriate laser light irradiation cannot be performed. This is because the temperature rise fluctuates even if the same laser light irradiation energy is input, because the absorption rate of the pattern material and the substrate material with respect to the laser light is different.

It is a figure which shows the influence of the wavelength of the laser beam on the chromium which forms the electrode line which is a pattern material, and the laser beam absorption of the glass which is a board | substrate material. According to the drawing, for laser light having a wavelength of 800 nm, chromium has a high absorption rate and glass has a low absorption rate. Therefore, if the laser light is irradiated under constant irradiation conditions without considering the magnitude of the area ratio of chromium in the laser light irradiation area, when the ratio of chromium is small, the temperature of the laser light irradiation area does not sufficiently rise, and the firing It becomes insufficient. On the other hand, when the ratio of chromium is large, since there is much heat absorption, it becomes too high and deformation | transformation arises in a board | substrate.

It is a figure which shows the relationship between the area ratio of a chromium part and a glass part, and laser beam output for proper baking by laser beam irradiation of wavelength 800nm. As described above, since chromium has a high absorption rate of laser light having a wavelength of 800 nm, when the ratio of chromium is large, it is necessary to reduce the laser light output.

By adjusting laser beam irradiation conditions as mentioned above according to the laser beam absorption rate and area ratio of a pattern material, appropriate baking can be attained. In addition, even if the substrate is enlarged, deformation with respect to the substrate does not occur.

It is a figure which shows the pattern correction apparatus which is an Example of this invention comprised based on said knowledge. When the apparatus is broadly classified, the observation optical system for observing the laser optical system 21 and the repair points provided coaxially with the laser optical system, and an image for calculating the ratio of the area of the glass portion without the pattern portion and the paste portion and the glass portion without them It consists of a processing mechanism 31 and the control computer 32 which controls the whole apparatus. In addition, the XY table 10 which mounts the workpiece | work 9 which is a board | substrate, the chuck | zipper 15 which holds the workpiece | work 9 on an XY table, the Z-axis table 22 which drives a laser optical system up and down, and The monitor 33 for observation etc. is provided.

FIG. 7: is a figure which shows the structure of the laser optical system 21 and the observation optical system coaxially attached to the laser optical system. The laser optical system 21 is composed of a laser light output device 1, a slit mechanism 12, an imaging lens 14, an objective lens 8, and the like. The optical system for observation includes a CCD camera 13 and a temperature measuring mechanism ( 18) and the like.

By providing these means, the temperature of the irradiation area | region during laser beam irradiation can be known, and it becomes possible to control more precisely based on the temperature. As a result, even if the composition of a pattern material etc. deviates from a normal thing, even if there exists a fluctuation | variation in the absorption rate with respect to a laser beam, baking can be performed stably. In the absence of such variation, more precise and stable firing is possible.

Next, the operation method of this apparatus is demonstrated.

First, when the part 40 to which the paste in the board | substrate mounted on the XY table 10 was apply | coated is observed with the CCD camera 13, the image like FIG. 8 will be obtained. The size of the laser light irradiation region 41 is determined by the slit mechanism 12, and the area where the pattern portion 43 and the paste portion 40 in the irradiation region 41 are combined, the area of the glass portion 42, The ratio of is determined by the image processing mechanism 31 to determine the irradiation energy of the laser light and the irradiation time. Irradiation of a laser beam can be adjusted with the laser beam output device 1 main body and the output control mechanism 2.

In addition, when stable baking is required, the temperature in the laser light irradiation area 41 is measured by the temperature measuring mechanism 18 at the time of baking, and feedback is given to the laser beam output device 1 and the output control mechanism 2. By applying, the baking state can be kept constant.

By using such an apparatus, the paste can be fired by laser light irradiation irrespective of the magnitude of the ratio of the pattern portion, and high precision correction can be easily performed without leaving a deformation on the substrate. By using the temperature measuring mechanism 18, it is possible to flexibly cope with industrial and everyday fluctuations, and in the absence of such fluctuations, more stable and accurate firing becomes possible.

In addition, the Example disclosed above is an illustration to the last, and the scope of the present invention is not limited to said Example. The scope of the invention is set forth by the claims, and is intended to include the meanings equivalent to those of the claims and all modifications within the scope.

In the correction of a defective part requiring deletion of a certain shape pattern, reduction in thickness, or the like, the correction region is irradiated with a laser beam whose beam diameter is narrowed by the application of the pattern correction apparatus and the correction method of the present invention, and the substrate is moved while the substrate is moved. By modifying the whole, it is possible to make beautiful modifications even if the correction area is thick and large. In addition, since the correction area can be easily set for the image on the personal computer screen obtained from the CCD camera, the work efficiency is improved.

In addition, by applying the apparatus and the method according to the present invention in the addition of a pattern of a certain shape and the correction of the defective part which need to be formed, it becomes possible to bake a stable paste regardless of the magnitude | size of the pattern part, and it is easy and highly precise The pattern of FIG. Can be corrected. Moreover, by measuring the temperature at the time of baking and applying a feedback to laser beam irradiation, more stable high precision baking is attained.

In addition, when there is a mixture of places requiring deletion and addition, or when there is no such mixing, when it is preferable to add after deletion due to the nature of the defect, or when it is preferable to delete after adding large, deletion and addition form Is reversed, and in the process of elimination and formation, the effects as mentioned above can be obtained respectively.

Claims (17)

In the pattern correction apparatus which corrects the pattern formed on the board | substrate with a laser beam, A table movable in a plane supporting the substrate, A laser light emitting device for emitting laser light, An optical system for condensing the laser light on a substrate with a beam having a diameter smaller than that of the pattern correction region, and for increasing the energy density of the laser beam; And table control means for controlling the movement of the table so that the beam scans the entire area of the pattern correction area. The method of claim 1, The laser light is a continuous wave laser light, And the movement of the table scanning the entire area of the pattern correction area is continuous. The method of claim 1, The laser beam is a continuous pulse-shaped laser beam of 500 kHz or more frequency, And the movement of the table scanning the entire area of the pattern correction area is continuous. The method according to any one of claims 1 to 3, A pattern correction apparatus, wherein a beam diameter smaller than the correction region of the pattern is 30 µm or less on the pattern. The method according to any one of claims 1 to 3, The laser light emitting device is a YAG or YLF laser light emitting device, The said laser beam is a 2nd harmonic laser beam radiate | emitted from the said YAG or YLF laser beam emission apparatus, The wavelength is 500-600 nm, The pattern correction apparatus. The method according to any one of claims 1 to 3, The pattern correction device, CCD camera for pattern observation, An image processing mechanism for processing an image obtained from the CCD camera, And a means for determining a scanning area to be corrected based on the image. The method of claim 6, The optical axis of the optical system for pattern observation containing the said CCD camera is coaxial with the optical axis of the optical system which condenses the said laser beam. In the pattern correction method of correcting a pattern formed on a substrate by laser light, The laser beam having a beam diameter smaller than that of the correction region of the pattern and increasing the energy density is irradiated to the correction region of the pattern, And a table mounted with a substrate to move the beam so as to scan the entire area of the pattern correction region. The method of claim 8, The pattern modification method whose film thickness of the pattern formed on the said board | substrate is 1 micrometer or more. In the pattern correction apparatus which observes the pattern formed on the board | substrate with the optical means for observation, recognizes a correction point, apply | coats a paste to the said correction point, and corrects it, Laser light output device, A laser optical system for condensing the laser light on a substrate; An image processing mechanism for obtaining a ratio of the area of the area where the pattern portion and the paste portion are combined with the area of the substrate portion on which the pattern is not formed, from the image obtained by the optical means for observation, And a means for determining conditions for firing by irradiating the laser light in the vicinity of the paste from the ratio. The method of claim 10, The pattern correcting apparatus includes a temperature measuring mechanism for irradiating a laser beam to measure a temperature of a firing irradiation region and means for determining irradiation conditions of the laser beam based on the temperature measurement result. The method of claim 10 or 11, The laser beam emitting device and the laser optical system are also used to delete an excess of a pattern formed on a substrate. In the pattern correction method of observing the pattern formed on the board | substrate by the optical means for observation, recognizing a correction point, apply | coating a paste to the said correction point, and irradiating a laser beam to the said paste and baking it, From the image obtained by the said optical means for observation, the process of obtaining the ratio of the area which combined the pattern part and the paste part in the area | region to which the said laser beam is irradiated, and the area of the board | substrate part in which the pattern is not formed is included, When the absorption rate of the pattern material with respect to the laser beam is larger than the absorption rate of the substrate material, the irradiation energy of the laser light is increased in the range where the ratio is small, and the irradiation energy of the laser light is lowered as the ratio is larger. The method of claim 13, The pattern correction method includes irradiating a laser light to measure a temperature in a laser light irradiation area that is being fired, and increasing or decreasing the irradiation energy of the laser light based on the temperature measurement result. The method of claim 4, wherein The laser light emitting device is a YAG or YLF laser light emitting device, The said laser beam is a 2nd harmonic laser beam radiate | emitted from the said YAG or YLF laser beam emission apparatus, The wavelength is 500-600 nm, The pattern correction apparatus. The method of claim 4, wherein The pattern correction device, CCD camera for pattern observation, An image processing mechanism for processing an image obtained from the CCD camera, And a means for determining a scanning area to be corrected based on the image. The method of claim 5, wherein The pattern correction device, CCD camera for pattern observation, An image processing mechanism for processing an image obtained from the CCD camera, And a means for determining a scanning area to be corrected based on the image.

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