KR100614698B1 - Method for fabricating LCD - Google Patents

Abstract

The present invention discloses a method of manufacturing a liquid crystal display device capable of forming a gate line including a gate electrode and a data line including a source / drain electrode without performing an etching process. The disclosed method of manufacturing a liquid crystal display device includes forming a gate line including a gate electrode on a transparent insulating substrate, forming a gate insulating film on the entire surface of the substrate to cover the gate line, and forming a gate insulating film on the gate insulating film. Forming an active layer on the substrate, forming a data line including a source / drain electrode on the substrate on which the active layer is formed, forming a protective film on the entire surface of the substrate to cover the data line, and A method of manufacturing a liquid crystal display device, the method comprising: forming a pixel electrode in contact with a source / drain electrode on the substrate; wherein forming the gate line including the gate electrode and the data line including the source / drain electrode comprises: a substrate; Depositing an Al alloy film containing 1 to 5% of Ni and 0.1 to 1% of C on the phase, the Ni and C containing Applying a photoresist film on an Al alloy film, exposing the photoresist film, developing the exposed photoresist film with a TMAH (2.38%) solution to form a photoresist pattern, and the TMAH (2.38%) solution It is characterized in that it comprises a step of patterning the Al alloy film containing Ni and C in the form of a photosensitive film pattern by the progress of the transient phenomenon.

Description

Liquid crystal display manufacturing method {Method for fabricating LCD}

1A to 1E are diagrams for describing a gate line and a data line forming method according to an exemplary embodiment of the present invention.

2A and 2B are profile pictures of gate lines and data lines formed by conventional methods and methods in accordance with the present invention.

Explanation of symbols on main parts of drawing

111 substrate 112 Al alloy film

112a: gate electrode 113: photosensitive film

113a: Photosensitive film pattern 114: Photomask

The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly, to a liquid crystal display device capable of forming a gate line including a gate electrode and a data line including a source / drain electrode without performing an etching process. It is about a method.

Liquid crystal displays have been developed in place of CRT (Cathod Ray Tube) on the basis of the advantages of low weight, low voltage driving, and low power consumption. In particular, the thin film transistor liquid crystal display has high resolution, large size, and colorization comparable to CRT. In recent years, it has been widely used in various fields.

The liquid crystal display device has a structure in which an array substrate on which a thin film transistor and a pixel electrode are formed, and a color filter substrate on which a color filter and a counter electrode are formed are bonded to each other under an intervening liquid crystal layer.

On the other hand, in such a liquid crystal display device, it is very important to reduce the number of manufacturing steps, in particular, the number of manufacturing steps of the array substrate. The reason is that as the number of manufacturing processes is reduced, the manufacturing cost of the liquid crystal display device can be reduced.

The manufacturing process of the array substrate will be briefly described as follows: forming a gate line including a gate electrode on a transparent insulating substrate, forming a gate insulating film on the entire surface of the substrate to cover the formed gate line, and forming an active layer on the gate insulating film. Forming a data line including a source / drain electrode on the substrate on which the active layer is formed; forming a protective film on the entire surface of the substrate to cover the data line; and contacting the source / drain electrode on the protective film. Forming a pixel electrode.

Among them, a gate line forming process including a gate electrode and a data line forming process including a source / drain electrode may include a metal film deposition process for forming gate and source / drain electrodes, a photoresist film deposition on a metal film, an exposure and development process, After that, the metal film is etched and the photoresist strip process.

In the metal film etching process, wet etching or dry etching is applied depending on the material of the metal film, and the metal film has low resistance wiring considering line delay in order to realize an increase in size of the liquid crystal display device. The use of materials is necessary. Pure Al (Aluminium) or Al alloy (eg AlNd) is used as the low-resistance wiring material. When the Al or Al alloy is used, stable ohmic characteristics between n + a-Si and the pixel electrode are realized. In order to improve the defects due to the heat resistance of the Al or Al alloys themselves, barrier metals such as Mo, Cr, Ti, etc. should be additionally used on the tops or tops and bottoms of the Al or Al alloys.

Then, the barrier metal is used to form a wiring form of a double layered structure (eg, Mo / Al double layer structure using Mo as a barrier metal) or a triple layered structure (eg, triple layer structure of Mo / Al / Mo). In this case, an etching technique is selectively applied according to the characteristics of the barrier metal.

However, as described above, the double or triple stack structure in which the barrier metal is applied to the top or the top and the bottom of the Al or Al alloy is increased because the deposition process of the barrier metal has to be added.

In addition, when etching the Al or Al alloy and the metal film of the double or triple stacked structure, there is a difficulty in controlling the etch profile, and thus may adversely affect subsequent processes.

Accordingly, the present invention has been proposed to solve the above problems, and provides a method of manufacturing a liquid crystal display device which can simplify the formation of a gate line including a gate electrode and a data line including a source / drain electrode. There is a purpose.

In order to achieve the above object, the present invention, forming a gate line including a gate electrode on a transparent insulating substrate, forming a gate insulating film on the entire surface of the substrate to cover the gate line, and the gate Forming an active layer on the insulating film, forming a data line including a source / drain electrode on the substrate on which the active layer is formed, forming a protective film on the entire surface of the substrate to cover the data line; The method of manufacturing a liquid crystal display device including forming a pixel electrode in contact with a source / drain electrode on the passivation layer, wherein forming a gate line including the gate electrode and a data line including a source / drain electrode includes: Depositing an Al alloy film containing 1-5% Ni and 0.1-1% C on the substrate, wherein the Ni and C Coating a photoresist film on the Al alloy film, exposing the photoresist film, developing the exposed photoresist film with a TMAH (2.38%) solution to form a photoresist pattern, and the TMAH (2.38%) The present invention provides a method of manufacturing a liquid crystal display device, comprising the steps of patterning an Al alloy film containing Ni and C in the form of a photoresist pattern by performing a transient phenomenon using a solution.

(Example)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, in the method of manufacturing a liquid crystal display according to the present invention, after forming a gate line including a gate electrode on a transparent insulating substrate, a gate insulating film is formed on the entire surface of the substrate, and then an active layer on the gate insulating film. Forming a data line including a source / drain electrode on the substrate on which the active layer is formed, and then forming a protective film on the entire surface of the substrate to cover the data line, and then forming a source / drain on the protective film. In order to form the pixel electrode in contact with the drain electrode.

In the method of manufacturing the liquid crystal display device as described above, the present invention proceeds by forming the gate line including the gate electrode and the data line including the source / drain electrodes in the following manner rather than the usual method.

First, an Al alloy film having low resistance characteristics is used as a material for the gate line and the data line, and in particular, Ni and C are added to the Al alloy film. In this case, Ni and C reduce the redox reaction force of the Al alloy layer, thereby reducing contact resistance with ITO, which is a pixel electrode material, and improving ohmic contact properties with n + a-Si. In the manufacture of wiring material, low-resistance Al alloy single wiring is made applicable.

In addition, when the content of Ni and C is properly adjusted, not only the electrical and thermal properties of the Al alloy film are improved, but also the reactivity with the TMAH ((CH3) 4NOH) 2, 2.38%) solution generally used in the developing process. By maximizing, the Al alloy film may be patterned by the transient development using the TMAH solution during the development process after the photosensitive film exposure.

In this way, the present invention realizes a low resistance wiring with a single film structure of an Al alloy film, thereby simplifying the process and reducing the cost by eliminating the barrier metal film, and also eliminating the separate metal film etching process. do.

In more detail, Figures 1a to 1e is a view for explaining a gate line forming method according to the present invention, it will be described as follows.

Referring to FIG. 1A, an Al alloy film 112 containing 1 to 5% Ni and 0.1 to 1% C is deposited on the substrate 111 to a thickness of 1000 to 8000 GPa.

Referring to FIG. 1B, a photosensitive film 113 is applied to the deposited Al alloy film 112 to have a thickness of 50 to 350 kPa as a patterning barrier.

Referring to FIG. 1C, the photoresist layer 113 is exposed with the photomask 114 disposed on the coated photoresist layer 113.

Referring to FIG. 1D, the exposed photoresist is developed with a TMAH (2.38%) solution to form a photoresist pattern 113a.

Referring to FIG. 1E, again, transient development is performed using a TMAH (2.38%) solution to pattern an Al alloy film containing Ni and C formed on the substrate 111 in the form of a photoresist pattern 113a to form a gate electrode 112a. ).

At this time, when the content of the Ni and C is properly adjusted, the reactivity with the TMAH (2.38%) solution is maximized, and the Al alloy film is patterned by the transient phenomenon using the TMAH solution. In addition, by controlling the content of Ni and C added to the Al alloy film, a good gate electrode profile can be obtained.

Referring to FIG. 1F, the photosensitive film 113a existing on the gate electrode 112a is removed to form a gate line including the gate electrode.

On the other hand, although a description has been given of a gate line forming method including a gate electrode, the data line including a source / drain electrode is also formed in the same manner as the gate line forming method described above.

When the gate line and the data line are formed in this manner, by using an Al alloy film containing Ni and C having low resistance as a material of the gate line and the data line, contact resistance with ITO, which is a pixel electrode material, can be reduced. In addition, the ohmic contact property with n + a-Si is improved to make a low resistance Al alloy single wiring as a wiring material in manufacturing a liquid crystal display device.

In addition, when the content of Ni and C added to the Al alloy is properly adjusted, not only the electrical and thermal properties of the Al alloy film are improved, but also TMAH ((CH3) 4NOH) 2, 2.38%), which is generally used in the developing process. By maximizing the reactivity with the solution, the Al alloy film can be made to be patterned by the transient development using the TMAH solution during the development process after the photosensitive film exposure. And the gate lines and data lines formed according to the added Ni and C contents form a good profile.

As a result, the present invention realizes a low resistance wiring with a single film structure of the Al alloy film, thereby simplifying the process and reducing the cost by eliminating the barrier metal film, and also eliminating the separate metal film etching process.

2A and 2B are profile pictures of a gate line and a data line formed by a conventional method and a method according to the present invention. FIG. 2A illustrates a wet etching process after depositing a metal film, applying a photoresist film, and exposing and developing the same. Figure 2b is a profile picture of the gate line and the data line formed through, and Figure 2b is a profile of the gate line and data line formed by depositing an Al alloy film containing Ni and C, applying a photosensitive film, exposing, and excessive development It is a photograph. In particular, Figure 2b is a profile picture formed by appropriately adjusting the content of Ni and C added to the Al alloy film.

As in FIG. 2A, the sidewalls 210 of the gate lines and data lines formed through conventional methods form a vertical profile. As a result, difficulties arise in the subsequent process of depositing a gate insulating film and a protective film on the formed gate line and data line.

On the other hand, as in FIG. 2B, the sidewalls 220 of the gate line and the data line formed through the method according to the present invention form a profile with a gentle slope. Thus facilitating subsequent process progress.

As described above, according to the present invention, by using an Al alloy containing Ni and C as the gate line and data line materials, the hypoallergenic properties as well as the ohmic contact properties can be secured even in a single film structure.

In addition, the present invention is applied to the Al alloy as the gate line and data line material, by appropriately adjusting the content of Ni and C, it can be patterned through the development process using TMAH, accordingly, by omitting the etching process A corresponding process simplification and cost reduction can be obtained.

As mentioned above, although the present invention has been illustrated and described with reference to specific embodiments, the present invention is not limited thereto, and the following claims are not limited to the scope of the present invention without departing from the spirit and scope of the present invention. It can be easily understood by those skilled in the art that can be modified and modified.

Claims (3)

Forming a gate line including a gate electrode on the transparent insulating substrate, forming a gate insulating film on the entire surface of the substrate to cover the gate line, forming an active layer on the gate insulating film, and Forming a data line including a source / drain electrode on the layered substrate, forming a passivation layer on the entire surface of the substrate to cover the data line, and forming a pixel electrode in contact with the source / drain electrode on the passivation layer In the manufacturing method of the liquid crystal display device comprising the step of forming a, Forming a gate line including the gate electrode and a data line including a source / drain electrode may include: Depositing an Al alloy film containing 1-5% Ni and 0.1-1% C on a substrate, applying a photoresist film to the Al alloy film containing Ni and C, and exposing the photoresist film. And developing the exposed photoresist with a TMAH (2.38%) solution to form a photoresist pattern, and performing a transient development using the TMAH (2.38%) solution to contain Ni and C in the form of a photoresist pattern. A method of manufacturing a liquid crystal display device, characterized by comprising the step of patterning the Al alloy film. The method of claim 1, The Ni and C-containing Al alloy film manufacturing method of a liquid crystal display device, characterized in that to deposit a thickness of 1000 ~ 8000Å. The method of claim 1, And the photosensitive film is coated with a thickness of 50 to 350 kPa.

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