KR100565642B1 - Phase change opticlal disk - Google Patents

Phase change opticlal disk Download PDF

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KR100565642B1
KR100565642B1 KR1020030088608A KR20030088608A KR100565642B1 KR 100565642 B1 KR100565642 B1 KR 100565642B1 KR 1020030088608 A KR1020030088608 A KR 1020030088608A KR 20030088608 A KR20030088608 A KR 20030088608A KR 100565642 B1 KR100565642 B1 KR 100565642B1
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recording
layer
recording film
phase change
film
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KR20050055400A (en
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김종환
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엘지전자 주식회사
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of groups 13, 14, 15 or 16 of the Periodic System, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/24018—Laminated discs
    • G11B7/24027—Layers; Shape, structure or physical properties thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/24322—Nitrogen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00—Record carriers by type
    • G11B2220/20—Disc-shaped record carriers
    • G11B2220/25—Disc-shaped record carriers characterised in that the disc is based on a specific recording technology
    • G11B2220/2537—Optical discs

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

본 발명은 상변화형 광디스크에 있어서, 기록을 위한 반복 레이저 조사시 유전체층에서 발생된 황이 기록막으로 확산되는 것을 방지하도록 기록막과 이 기록막의 위 아래에 형성된 유전체층 사이에 각각 TiGe-N 합금박막층을 형성하도록 한 것이다.In the phase change type optical disc, a TiGe-N alloy thin film layer is respectively provided between a recording film and a dielectric layer formed above and below the recording film to prevent sulfur generated in the dielectric layer from diffusing into the recording film during repeated laser irradiation for recording. It is to form.

상변화형 광디스크, 인터페이스층Phase change optical disk, interface layer

Description

상변화형 광디스크{Phase change opticlal disk}Phase change opticl disk

도 1은 종래의 4층막 상변화형 광디스크의 단면구조를 개략적으로 나타낸 도면,1 is a schematic cross-sectional view of a conventional four-layer film phase change type optical disk;

도 2는 종래의 GeN 인터페이스층을 이용한 6층막 상변화형 광디스크의 단면구조를 개략적으로 나타낸 도면,2 is a schematic cross-sectional view of a six-layer film phase change type optical disk using a conventional GeN interface layer;

도 3의 (a) 및 (b)는 기록을 위한 레이저 조사시 인터페이스층(GeN)의 유무에 따라 광디스크의 깊이에 대한 기록막에서의 S원자 분포를 나타낸 도면,3 (a) and 3 (b) show the distribution of S atoms in the recording film with respect to the depth of the optical disk depending on the presence or absence of the interface layer GeN during laser irradiation for recording;

도 4는 종래의 TiN 인터페이스층을 이용한 6층막 상변화형 광디스크의 단면구조를 개략적으로 나타낸 도면,4 is a schematic cross-sectional view of a six-layer film phase change type optical disk using a conventional TiN interface layer;

도 5는 본 발명의 일실시예에 따른 인터페이스층을 이용한 6층막 상변화형 광디시크의 단면구조를 개략적으로 나타낸 도면이다.5 is a schematic cross-sectional view of a six-layer film phase change type optical disc using an interface layer according to an embodiment of the present invention.

* 주요 도면 부호의 설명** Explanation of Major References *

10, 20 : 기판 11, 21 : 반사막10, 20: substrate 11, 21: reflective film

12, 22 : 제 1 유전체층 13, 29 : 기록막12, 22: first dielectric layer 13, 29: recording film

14, 26 : 제 2 유전체층 15, 16, 23 : 제 1 인터페이스층14, 26: second dielectric layer 15, 16, 23: first interface layer

15', 16', 25 : 제 2 인터페이스층15 ', 16', 25: second interface layer

본 발명은 정보저장용 기록매체로 이용되고 있는 상변화형 광디스크에 관한 것으로, 특히 기록막과 유전체층 사이에 황(S)의 확산을 방지하기 위해 인터페이스층을 설치한 상변화형 광디스크에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase change type optical disc that is used as a recording medium for information storage, and more particularly to a phase change type optical disc provided with an interface layer to prevent the diffusion of sulfur (S) between a recording film and a dielectric layer.

일반적으로 정보저장용 기록매체로 이용되고 있는 상변화형 광디스크는 집속된 레이저 빔을 기록층의 국부적인 영역에 조사하여 승온/용융시키고, 열의 확산속도를 빠르게 설계한 디스크 구조를 이용해 급냉(quenching)시켜 비정질 마스크를 결정질 기지(matrix)에 만들어 줌으로써 정보를 기록한다. 그리고 재생시에는 기록된 비정질 마크와 결정질 기지 사이의 반사도 차이로부터 정보를 읽어내게 된다. 기록된 정보를 소거하는 경우에는 기록시 보다 약간 파워가 낮은 레이저로 가열해 비정질 마크 부위를 결정질로 만들어 준다. 이런 상변화형 광디스크는 또 다른 광디스크의 하나인 광자기 디스크에 비하여 반복기록 특성이 크게 떨어지는 약점이 있다. 이것은 상변화형 광디스크에서는 기록막의 결정질→비정질 반복 변태를 통한 기록을 수행하기 때문에, 레이저의 인가에 의하여 매우 높은 온도까지 기록막을 가열해야 하기 때문이다. 이렇게 높은 온도로 기록막이 가열되는 경우에 원자들의 확산이 활발하게 일어난다.A phase change type optical disk, which is generally used as a recording medium for information storage, is heated and melted by irradiating a focused laser beam to a local area of the recording layer, and quenched by using a disk structure designed for rapid diffusion of heat. Information is recorded by making an amorphous mask in a crystalline matrix. At the time of reproduction, information is read from the difference in reflectivity between the recorded amorphous mark and the crystalline matrix. In the case of erasing the recorded information, it is heated by a laser which is slightly lower in power than in recording to make the amorphous mark region crystalline. Such a phase change type optical disc has a weakness in that the repetitive recording characteristics are significantly lower than that of another optical disc. This is because in the phase change type optical disk, recording is performed through crystalline to amorphous repeat transformation of the recording film, and therefore the recording film must be heated to a very high temperature by application of a laser. When the recording film is heated to such a high temperature, diffusion of atoms takes place vigorously.

최근 들어 급격한 기록밀도 증가를 보이고 있는 상변화형 고밀도 기록정보/재생 기록매체에서 가장 중요한 이슈로 등장하고 있는 문제가 반복기록 특성이다. 이 반복기록 특성은 기록층의 상변화 현상이 원하는 만큼 정확히 일어나느냐에 의 해서 좌우된다. 원치 않는 원소가 기록층으로 확산되어 들어가면 기록시 인가되는 레이저 파워에 의하여 원하지 않는 상변태 현상이 발생하게 된다. In recent years, the repetitive recording characteristic is a problem that has emerged as the most important issue in the phase change type high density recording information / reproducing recording medium which has shown a sharp increase in recording density. This repetitive recording characteristic depends on whether the phase change phenomenon of the recording layer occurs exactly as desired. When unwanted elements diffuse into the recording layer, unwanted phase transformation occurs due to the laser power applied during recording.

도 1은 일반적인 4층막 상변화형 광디스크의 기본구조를 나타낸 것으로, 기판(10), 반사층(11), 제 1 유전체층(12), 기록막(13), 제 2 유전체층(14)으로 형성되어 있다. 상기 기판(10)는 일반적으로 투명한 폴리카보네이트로 형성되고, 제 1 및 제 2 유전체층(12, 14)은 ZnS-SiO2로 형성되며, 기록막(13)은 Ge-Sb-Te계 합금이나 또는 Ag-In-Sb-Te계 합금으로 되어 있으며, 반사층(11)은 AgPdCu계 합금으로 되어 있다. 그리고, 상기 제 2 유전체층(14) 위에는 통상적으로 보호막(도시않됨)이 형성되어 있다. FIG. 1 shows a basic structure of a general four-layer film phase change type optical disk, which is formed of a substrate 10, a reflective layer 11, a first dielectric layer 12, a recording film 13, and a second dielectric layer 14. . The substrate 10 is generally formed of transparent polycarbonate, the first and second dielectric layers 12, 14 are formed of ZnS-SiO 2 , and the recording film 13 is a Ge-Sb-Te based alloy, or Ag-In-Sb-Te alloy and the reflective layer 11 is made of AgPdCu alloy. A protective film (not shown) is typically formed on the second dielectric layer 14.

상기 구조의 상변화형 광디스크에 기록을 수행하고자 할 때에는 높은 파워의 레이저로 기록막(13)을 가열하며 이때 기록막(13)이 느끼는 온도는 600℃ 이상의 높은 온도이다. 이렇게 높은 온도로 가열되는 경우에 기록막(13)과 유전체층(12, 14)의 계면에서 원자들의 이동이 활발하게 일어날 수 있다. 그 중에서도 녹는점이 낮고 휘발성이 강한 유전체층(12, 14)의 황(S)은 확산이 활발하게 일어난다. 반복기록을 시도하는 경우에는 레이저의 반복인가에 의한 높은 열이 기록막(13)의 주변에 반복적으로 발생하게 되고, 이때 황이 조금씩 기록막쪽으로 확산하게 되고, 이렇게 기록막으로 확산된 황이 치명적으로 반복특성을 감소시키게 된다.When recording is to be performed on the phase change type optical disc of the above structure, the recording film 13 is heated by a laser of high power, and the temperature felt by the recording film 13 is higher than 600 ° C. When heated to such a high temperature, the movement of atoms at the interface between the recording film 13 and the dielectric layers 12 and 14 can actively occur. Among them, sulfur (S) of the dielectric layers 12 and 14 having low melting point and high volatility is actively diffused. In the case of repetitive recording, high heat due to repeated application of the laser is repeatedly generated around the recording film 13, in which sulfur diffuses little by little toward the recording film, and the sulfur diffused into the recording film is repetitively fatally repeated. It will reduce the characteristics.

이런 반복특성의 감소를 억제하기 위하여 기록층에 질소를 도핑하는 방법이 시도되었다. 또한, 마스시타(Matsushita)등에서는 도 2에 도시된 바와 같이, 기록 층(13)과 제 1 및 제 2 유전체층(12, 14) 사이에 GeN으로 형성되는 인터페이스층(15, 15')를 형성하여 6층막의 상변화형 광디스크로 함으로써 황(S)의 확산을 방지토록 제안한 바 있다.In order to suppress such a decrease in repeatability, a method of doping nitrogen in the recording layer has been attempted. In addition, in Matsushita et al., As shown in FIG. 2, an interface layer 15, 15 ′ formed of GeN is formed between the recording layer 13 and the first and second dielectric layers 12 and 14. Therefore, it has been proposed to prevent the diffusion of sulfur (S) by using a six-layer film as a phase change type optical disk.

그러나, GeN의 인터페이스층(15, 15')을 형성하는 경우에도 기록막(13)으로의 황(S)의 확산을 완전히 막지 못하고 어느 정도의 개선효과만을 얻는 것으로 알려져 있다. 즉 도 3의 (a)는 상술한 바와 같이, GeN의 인터페이스층을 형성한 경우에 있어서, 그리고 도 3의 (b)는 GeN의 인터페이스층이 형성되지 않는 경우에 있어서, 각각 기록막에서의 S원자의 분포를 SIMS(Secondary Ion Mass Spectrometer)로 측정한 SIMS확산 프로파일의 결과를 나타낸 것으로, 그래프중 증착시는 증착방법에 의해 광디스크를 처음 형성할 때의 광디스크의 깊이에 따른 S원자수/㎤를 나타낸 그래프이며, 그래프중 레이저 용융시는 기록을 위해 레이저를 조사할 때의 광디스크의 깊이에 따른 S원자수/㎤를 나타낸 그래프이다. 기록을 위한 레이저 조사시 인터페이스층(GeN)이 형성되지 않는 경우에 기록막에서의 S원자수/㎤의 최소치는 대략 1021원자수/㎤이고, 인터페이스층(GeN)이 형성되었을 경우에 기록막에서의 S원자수/㎤의 최소치는 대략 1020원자수/㎤로서, 상기 인터페이스층이 형성되어 있는 경우 그렇지 않는 경우에 비하여 S의 기록막 내부로의 확산이 많이 줄었지만 아직도 상당량(최소치 약 1020원자수/㎤)의 S원자가 기록막내에 남아있으며, 결국 이렇게 남아있는 S는 기록막의 반복특성을 나쁘게 한다는 문제점이 있다. However, even when the GeN interface layers 15 and 15 'are formed, it is known that the diffusion of sulfur (S) into the recording film 13 is not completely prevented and only a certain improvement effect is obtained. 3A shows the case where the GeN interface layer is formed as described above, and FIG. 3B shows the case where the GeN interface layer is not formed. It shows the result of SIMS diffusion profile which measured distribution of atom by SIMS (Secondary Ion Mass Spectrometer). This graph is a graph showing the number of S atoms / cm 3 according to the depth of the optical disc when the laser is irradiated for recording during laser melting. The minimum value of S atoms / cm 3 in the recording film when the interface layer GeN is not formed during laser irradiation for recording is approximately 10 21 atoms / cm 3, and the recording film when the interface layer GeN is formed. The minimum value of S atoms / cm 3 in S is approximately 10 20 atoms / cm 3, and the diffusion of S into the recording film is considerably reduced compared to the case where the interface layer is not formed. S atoms of 20 atoms / cm 3 remain in the recording film, and thus, the remaining S has a problem of worsening the repeating characteristics of the recording film.

한편, 최근 반도체 공정의 새롭게 사용되는 Cu의 Si내로의 확산을 막기 위한 디퓨전 베리어(diffusion barrier)재료로로 사용되는 TiN은 확산 방지 특성과 기계적 특성이 뛰어난 점에 착안하여 도 4에 도시된 바와 같이 이 TiN막(16, 16')을 상변화형 광디스크의 기록막(13)과 유전체층들(12, 14) 사이에 형성하여 기록막(13)으로의 S확산을 방지하도록 하는 시도가 일본 마스시타(주)에서 이루어진 바 있으나, 마스시타(주)의 발표자료(N.Yamada, et al., Jpn.J.Appl.Phys. 37(1998) 2104)에 의하면, 상기 TiN막은 기록막으로 사용되는 Ge-Sb-Te계 합금과 접착성이 좋지 않고 레이저 인가에 의하여 파열손상(burst damage)를 나타내게 되어 상변화형 광디스크 기록막으로의 S 확산 방지층으로는 적합하지 않는 것으로 되었다.Meanwhile, TiN, which is used as a diffusion barrier material to prevent diffusion of Cu into Si, which is newly used in a semiconductor process, is shown in FIG. Attempts have been made to form the TiN films 16 and 16 'between the recording film 13 and the dielectric layers 12 and 14 of the phase change type optical disc to prevent S diffusion into the recording film 13 in Japan. Although, the present invention (N.Yamada, et al., Jpn. J. Appl. Phys. 37 (1998) 2104) of Masshita Co., Ltd., said TiN film is used as a recording film. The adhesion with the Ge-Sb-Te-based alloy is poor, and burst damage is exhibited by applying a laser, which is not suitable as an S diffusion preventing layer to a phase change type optical disk recording film.

따라서, 기록막으로의 S의 확산을 효과적으로 방지함과 아울러, 기록막과의 접착성을 개선한 새로운 인터페이스층이 적실히 요구 되고 있다.Therefore, there is a demand for a new interface layer that effectively prevents the diffusion of S into the recording film and improves the adhesion to the recording film.

따라서, 본 발명은 이와 같은 종래기술의 문제점을 감안하여 이루어진 것으로서, 유전체층에서 발생되는 S의 기록막으로의 확산을 효율적으로 차단함과 동시에 기록막과의 접착성을 양호하게 하고 반복 레이저 인가에 의한 파열손상을 방지함으로써, 반복기록 특성을 개선한 상변화형 광디스크를 제공함을 목적으로 하고 있다.Accordingly, the present invention has been made in view of the above-described problems of the prior art, and effectively prevents diffusion of S into the recording film generated in the dielectric layer and at the same time improves the adhesion to the recording film, and is applied by repeated laser application. It is an object of the present invention to provide a phase change type optical disc having improved recording characteristics by preventing rupture damage.

이와 같은 발명의 목적을 달성하기 위한 본 발명의 상변화형 광디스크는 기판, 상기 기판상에 형성된 반사층; 상기 반사층에 형성된 제 1 유전체층; 상기 제 1 유전체층상에 TiGe-N으로 형성되는 제 1 인터페이스층; 상기 제 1 인터페이스층 상에 형성된 기록막; 상기 기록막상에 TiGe-N으로 형성되는 제 2 인터페이스층; 상기 제 2 인터페이스층상에 형성된 제 2 유전체층을 구비함을 특징으로 한다.Phase change type optical disk of the present invention for achieving the object of the present invention is a substrate, a reflective layer formed on the substrate; A first dielectric layer formed on the reflective layer; A first interface layer formed of TiGe-N on the first dielectric layer; A recording film formed on the first interface layer; A second interface layer formed of TiGe-N on the recording film; And a second dielectric layer formed on the second interface layer.

본 발명에서 TiGe-N합금박막으로 되는 제 1 및 제 2 인터페이스층이 기록막과 제 1 유전체층 및 제 2 유전체층 사이에 각각 형성되어 있으므로 기록을 위해 반복 레이저 조사시 제 1 및 제 2 유전체층에서 발생된 황(S)의 기록막으로의 확산이 차단됨과 동시에 기록막과의 접착성을 보다 양호하게 하여준다.In the present invention, since the first and second interface layers, which become TiGe-N alloy thin films, are formed between the recording film, the first dielectric layer, and the second dielectric layer, respectively, the first and second dielectric layers generated during repeated laser irradiation for recording are generated. The diffusion of sulfur (S) into the recording film is blocked and at the same time, the adhesion with the recording film is improved.

이하 첨부된 도면에 근거하여 본 발명의 실시예를 구체적으로 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 5는 본 발명의 실시예를 도시한 것으로서, 폴리카보네이트의 투명기판(20), 상기 투명기판(20)상에 형성된 반사막, 상기 반사막(21)상에 형성된 제 1 유전체층(22), 상기 제 1 유전체층(22)상에 TiGe-N으로 형성된 제 1 인터페이스층(23), 상기 제 1 인터페이스층(23)상에 형성된 기록막(24), 상기 기록막(24)상에 TiGe-N으로 형성된 제 2 인터페이스층(25), 그리고 상기 제 2 인터페이스층(25)상에 형성된 제 2 유전체층(26)으로 구성되어 있다.5 illustrates an embodiment of the present invention, wherein a transparent substrate 20 of polycarbonate, a reflective film formed on the transparent substrate 20, a first dielectric layer 22 formed on the reflective film 21, and the first A first interface layer 23 formed of TiGe-N on one dielectric layer 22, a recording film 24 formed on the first interface layer 23, and a TiGe-N formed on the recording film 24. The second interface layer 25 and the second dielectric layer 26 formed on the second interface layer 25 are formed.

상기 반사막(21)은 AgPdCu의 합금층으로 형성되어 있고, 제 1 및 제 2 유전체층(22, 26)은 ZnS-SiO2박막으로 형성되어 있으며, 상기 기록막(24)는 Ge-Sb-Te계 합금으로 형성되어 있다.The reflective film 21 is formed of an alloy layer of AgPdCu, the first and second dielectric layers 22 and 26 are formed of a ZnS-SiO 2 thin film, and the recording film 24 is formed of a Ge-Sb-Te based layer. It is formed of an alloy.

그리고 상기 제 1 및 제 2 인터페이스층의 두께는 각각 10Å~50Å이며, 상기 인터페이스층의 두께가 10Å보다 얇으면 인터페이스층의 설치효과가 없게 되고 50Å보다 두꺼우면 레이저 빔의 반복 조사에 의한 기록막으로의 데이터 기록시 레이 저 빔을 지나치게 차단하게 되어 제대로 데이터가 기록되지 않게 된다.The thicknesses of the first and second interface layers are 10 kPa to 50 kPa, respectively, and when the thickness of the interface layer is thinner than 10 kPa, there is no effect of installing the interface layer. When the data is recorded, the laser beam is blocked too much and data is not recorded properly.

상기 실시예의 상변화형 광디스크는 기록막(24)과 이 기록막(24)의 위 아래에 형성된 제 1 및 제 2 유전체층(22, 26) 사이에 TiGe-N으로 형성되는 인터페이스층(23, 25)을 형성하기 때문에 TiGe-N층의 Ti-N조성에 의해, 기계적 강도가 양호하게 됨과 동시에 기록막(24)에 데이터를 기록하기 위해 레이저 반복 조사시 기록막(24)으로의 S 차단효과가 뛰어나서 S의 확산을 더욱 효과적으로 억제하며, 또한 Ti-N에 Ge를 포함시켜 합금박막을 형성하였기 때문에 기록막으로 사용되는 Ge-Sb-Te계 합금층과의 접착성이 양호하고 이로 인해 파열손상(burst damage)이 방지하게 된다.The phase change type optical disc of this embodiment has an interface layer 23, 25 formed of TiGe-N between the recording film 24 and the first and second dielectric layers 22, 26 formed above and below the recording film 24. ), The TiG-N composition of the TiGe-N layer improves the mechanical strength and the S blocking effect to the recording film 24 upon repeated laser irradiation in order to record data on the recording film 24. It is excellent in suppressing the diffusion of S more effectively, and since the alloy thin film is formed by including Ge in Ti-N, the adhesion with the Ge-Sb-Te alloy layer used as the recording film is good, and thus the rupture damage ( burst damage).

이상과 같이 본 발명에 의한 상변화형 광디스크는 기록막과 이 기록막 위 아래에 형성된 유전체층 사이에 TiGe-N으로 형성되는 인터페이스층이 각각 삽입되어 있기 때문에 기록막으로의 황(S)의 확산을 크게 억제하여 상변화형 광디스크의 가장 큰 문제점인 반복기록 특성을 크게 향상시킬 수 있음과 동시에 기록막과의 접착성을 양호하게 할 수 있고 파열손상(burst damage)을 방지할 수 있다는 효과가 있으며, 특히 CD, DVD, AOD 및 BD를 포함하는 상변화형 광디스크에 유효하게 적용시킬 수 있다.As described above, in the phase change type optical disc according to the present invention, since an interface layer formed of TiGe-N is inserted between the recording film and the dielectric layers formed on and under the recording film, diffusion of sulfur (S) into the recording film is prevented. By greatly suppressing, it is possible to greatly improve the repeat recording characteristics, which is the biggest problem of the phase change type optical disk, and to improve adhesion to the recording film, and to prevent burst damage. In particular, the present invention can be effectively applied to phase change type optical discs including CD, DVD, AOD and BD.

Claims (4)

기판;Board; 상기 기판상에 AgPdCu의 합금층으로 형성된 반사층;A reflective layer formed of an alloy layer of AgPdCu on the substrate; 상기 반사층상에 형성된 제 1 유전체층;A first dielectric layer formed on the reflective layer; 상기 제 1 유전체층상에 TiGe-N 합금박막으로 형성된 제 1 인터페이스층;A first interface layer formed of a TiGe-N alloy thin film on the first dielectric layer; 상기 제 1 인터페이스층상에 형성된 기록막;A recording film formed on the first interface layer; 상기 기록막상에 TiGe-N 합금박막으로 형성된 제 2 인터페이스층; 그리고A second interface layer formed of a TiGe-N alloy thin film on the recording film; And 상기 제 2 인터페이스층상에 형성된 제 2 유전체층을 포함하여 이루어짐을 특징으로 하는 상변화형 광디스크.And a second dielectric layer formed on the second interface layer. 삭제delete 삭제delete 삭제delete
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