KR100563450B1 - Dielectric ceramic composition and manufacturing method thereof - Google Patents

Dielectric ceramic composition and manufacturing method thereof Download PDF

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KR100563450B1
KR100563450B1 KR1020030098464A KR20030098464A KR100563450B1 KR 100563450 B1 KR100563450 B1 KR 100563450B1 KR 1020030098464 A KR1020030098464 A KR 1020030098464A KR 20030098464 A KR20030098464 A KR 20030098464A KR 100563450 B1 KR100563450 B1 KR 100563450B1
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유명재
강남기
남산
김민한
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전자부품연구원
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    • H—ELECTRICITY
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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Abstract

본 발명은 하기 화학식 1의 유전체 세라믹 조성물 및 그 제조방법에 관한 것으로서, 상기 유전체 세라믹 조성물은 950℃ 이하의 저온에서도 소결이 가능할 뿐만 아니라 유전율(

Figure 112003050091541-pat00001
r)이 25∼30이고, 품질계수(Q×f0)가 5,000∼12,000 GHz이며, 공진 주파수 온도계수(
Figure 112003050091541-pat00002
f)의 범위가 ±10 ppm/℃이어서 고주파용 유전체 세라믹 부품의 재료로 사용될 수 있는 우수한 특성을 갖는다.The present invention relates to a dielectric ceramic composition of Formula 1 and a method for manufacturing the same, wherein the dielectric ceramic composition is capable of sintering at a low temperature of 950 ° C. or lower, as well as a dielectric constant (
Figure 112003050091541-pat00001
r ) is 25 to 30, the quality factor (Q × f 0 ) is 5,000 to 12,000 GHz, and the resonance frequency temperature coefficient (
Figure 112003050091541-pat00002
f ) in the range of ± 10 ppm / ° C, which has excellent properties that can be used as a material for high-frequency dielectric ceramic parts.

[화학식 1] [Formula 1]

Ba(Zn1/3Ta2/3)O3 ·x B2O3 ·y CuO Ba (Zn 1/3 Ta 2/3 ) O 3 · x B 2 O 3 · y CuO

(상기 식에서 2몰%

Figure 112003050091541-pat00003
x
Figure 112003050091541-pat00004
20몰%, 2몰%
Figure 112003050091541-pat00005
y
Figure 112003050091541-pat00006
25몰% 이다.)(2 mol% in the above formula
Figure 112003050091541-pat00003
x
Figure 112003050091541-pat00004
20 mol%, 2 mol%
Figure 112003050091541-pat00005
y
Figure 112003050091541-pat00006
25 mole%)

유전체, 세라믹, 고주파유전체, BZT, B2O3, CuODielectric, Ceramic, High Frequency Dielectric, BZT, B2O3, CuO

Description

유전체 세라믹 조성물 및 제조 방법{Dielectric ceramic composition and manufacturing method thereof}Dielectric ceramic composition and manufacturing method

도 1과 2는 소결온도(sintering temperature)와 CuO 및 삼산화이붕소(B2O3)첨가량 변화에 따른 본 발명의 유전체 세라믹 조성물의 품질계수(Q×f0)의 변화를 나타낸 그래프이고,1 and 2 are graphs showing the change of the quality factor (Q × f 0 ) of the dielectric ceramic composition of the present invention according to the sintering temperature and the addition amount of CuO and boron trioxide (B 2 O 3 ),

도 3과 4는 소결온도와 CuO 및 B2O3 첨가량 변화에 따른 본 발명의 유전체 세라믹 조성물의 유전율(

Figure 112003050091541-pat00007
r)의 변화를 나타낸 그래프이며,3 and 4 are the dielectric constant of the dielectric ceramic composition of the present invention according to the sintering temperature and the addition amount of CuO and B 2 O 3
Figure 112003050091541-pat00007
r ) is a graph showing the change,

도 5는 900℃의 소결온도에서 CuO 첨가량 변화에 따른 본 발명의 유전체 세라믹 조성물의 공진주파수 온도계수(

Figure 112003050091541-pat00008
f)의 변화를 나타낸 그래프이다.5 is a resonance frequency temperature coefficient of the dielectric ceramic composition of the present invention according to the amount of CuO addition at a sintering temperature of 900 ℃ (
Figure 112003050091541-pat00008
f ) is a graph showing the change.

본 발명은 유전체 세라믹 조성물 및 그 제조방법에 관한 것으로서, 보다 상세하게는 높은 유전율(

Figure 112003050091541-pat00009
r)과 품질계수(Q×f0), 그리고 안정된 공진주파수 온도계수(
Figure 112003050091541-pat00010
f)를 가지며 저온에서도 소결 가능한 고주파용 유전체 세라믹 조성물 및 그 제조방법에 관한 것이다.The present invention relates to a dielectric ceramic composition and a method of manufacturing the same, and more particularly, to a high dielectric constant (
Figure 112003050091541-pat00009
r ), the quality factor (Q × f 0 ), and the stable resonant frequency temperature coefficient (
Figure 112003050091541-pat00010
The present invention relates to a high frequency dielectric ceramic composition having f ) and sintered at low temperature, and a method of manufacturing the same.

최근 이동통신산업의 발전에 따른 통신용 기기의 소형화, 경량화 및 복합 다기능화 경향으로 인해 수동 부품소자의 적층화와 복합화에 대한 요구가 증가하고 있으며, 이러한 요구를 충족시키기 위한 다양한 유전율 재료의 개발과 저온소성 기술 개발이 함께 요구되고 있다. Recently, due to the trend of miniaturization, light weight, and multi-functionality of communication devices according to the development of the mobile communication industry, there is an increasing demand for stacking and complexing of passive component elements. Development of the firing technology is also required.

현재 적층부품에 사용되고 있는 유전체 세라믹 조성물은 대부분 BaTiO3가 기본조성이며, 소결온도를 낮추기 위해 산화물 소결조제 또는 유리(glass frit)를 첨가하고 있다. Most of dielectric ceramic compositions currently used in laminated parts are based on BaTiO 3 , and an oxide sintering aid or glass frit is added to lower the sintering temperature.

그러나 이러한 조성을 갖는 유전체 조성물들은 소결온도가 950℃ 이상으로 비교적 높고, 내환원성을 갖고 있으며, 유전손실이 크기 때문에 MHz 이상에서는 사용이 어렵다는 문제점이 있다. However, dielectric compositions having such a composition have a high sintering temperature of 950 ° C. or more, a reduction resistance, and a high dielectric loss.

또한 이들의 온도변화에 따른 유전율의 변화가 수백 ppm/℃이기 때문에 이동통신용 부품에는 사용할 수 없다는 문제점이 있다.In addition, there is a problem that can not be used for mobile communication components because the change in dielectric constant due to the temperature change of several hundred ppm / ℃.

일반적으로 고주파 유전체 세라믹 재료들은 1000℃ 이상에서 소결되어 내부 전극재료로서 전도성이 떨어지거나 값비싼 재료들이 사용된다. In general, high-frequency dielectric ceramic materials are sintered at 1000 ° C. or higher, so that the conductive or inexpensive materials are used as internal electrode materials.

상대적으로 값이 싸고 전기전도성이 좋은 Ag나 Cu 등을 사용하기 위해서는 950℃ 이하의 저온에서 소성이 가능해야 하므로 이에 대한 연구가 많이 진행되고 있으나, 현재 연구되는 재료의 경우 유전율이 20 이하로 제한되며, 전극과의 반응으로 인해 상용화에 어려움을 겪고 있다. In order to use Ag or Cu, which is relatively inexpensive and has good electrical conductivity, it has to be calcined at a low temperature of 950 ° C. or lower. Due to the reaction with the electrode, it is having difficulty in commercialization.

본 발명은 종래의 상기와 같은 문제점들을 해결하기 위하여 안출된 것으로서, 높은 유전율(

Figure 112003050091541-pat00011
r)과 품질계수(Q×f0), 그리고 안정된 공진주파수 온도계수(
Figure 112003050091541-pat00012
f)를 가지며 저온에서도 소결 가능한 유전체 세라믹 조성물 및 그 제조방법을 제공하는 것을 목적으로 한다.The present invention has been made to solve the above problems of the prior art, high dielectric constant (
Figure 112003050091541-pat00011
r ), the quality factor (Q × f 0 ), and the stable resonant frequency temperature coefficient (
Figure 112003050091541-pat00012
An object of the present invention is to provide a dielectric ceramic composition having f ) and sintered at low temperatures, and a method of manufacturing the same.

본 발명의 상기 목적은 소결 온도를 낮추기 위하여 B2O3 및 CuO를 첨가한 유전체 세라믹 조성물 및 그 제조방법을 제공함으로써 달성되는데, 상기 유전체 세라믹 조성물은 950℃ 이하의 저온에서 소결 가능하고, 25 ~ 30의 유전율(

Figure 112003050091541-pat00013
r), 5,000∼12,000 GHz의 품질계수(Q×f0), 그리고 ±10 ppm/℃의 공진주파수 온도계수(
Figure 112003050091541-pat00014
f)를 가진다.The above object of the present invention is achieved by providing a dielectric ceramic composition to which B 2 O 3 and CuO are added to reduce the sintering temperature and a method of manufacturing the same, wherein the dielectric ceramic composition is sinterable at a low temperature of 950 ° C. or lower, and Permittivity of 30 (
Figure 112003050091541-pat00013
r ), the quality factor (Q x f 0 ) from 5,000 to 12,000 GHz, and the resonant frequency temperature coefficient (± 10 ppm / ℃)
Figure 112003050091541-pat00014
f )

본 발명은 하기 화학식 1과 같이 조성되는 유전체 세라믹 조성물 및 그 제조방법에 관한 것이다.The present invention relates to a dielectric ceramic composition and a method of manufacturing the same as the formula (1).

Ba(Zn1/3Ta2/3)O3 ·x B2O3 ·y CuO Ba (Zn 1/3 Ta 2/3 ) O 3 · x B 2 O 3 · y CuO

(상기 식에서 2몰%

Figure 112003050091541-pat00015
x
Figure 112003050091541-pat00016
20몰%, 2몰%
Figure 112003050091541-pat00017
y
Figure 112003050091541-pat00018
25몰% 이다.)(2 mol% in the above formula
Figure 112003050091541-pat00015
x
Figure 112003050091541-pat00016
20 mol%, 2 mol%
Figure 112003050091541-pat00017
y
Figure 112003050091541-pat00018
25 mole%)

상기 유전체 세라믹 조성물에 있어서, B2O3가 전체 조성물에 대하여 2몰% 보다 적게 첨가될 경우에는 저온 소결이 잘 되지 않으며, 20몰% 보다 많이 첨가될 경 우에는 소결성이 더 이상 향상되지 않는다. In the dielectric ceramic composition, low temperature sintering is not performed when B 2 O 3 is added less than 2 mol% relative to the total composition, and when more than 20 mol% is added, the sinterability is no longer improved.

또한, CuO가 2몰% 보다 적게 첨가될 경우에도 저온 소결이 잘 되지 않으며, 25몰% 보다 많이 첨가될 경우에는 소결성이 더 이상 변화되지 않는다. In addition, even when less than 2 mol% CuO is added to the low temperature sintering is not good, when more than 25 mol% does not change the sinterability any more.

상기 화학식 1의 유전체 세라믹 조성물의 제조방법은, BaCO3, ZnO, Ta2O5 분말을 습식 혼합한 후 건조시켜 약 1200℃에서 약 4시간 동안 하소한 다음 분쇄하여 BZT 분말을 제조하는 단계와; 상기 하소된 BZT 분말에 B2O3와 CuO 분말을 첨가하고 습식혼합한 후 건조하는 단계와; 상기 건조 시료를 가압 성형한 후 850 ~ 950℃에서 약 2시간 동안 소결하는 단계를 포함하여 구성된다.The method of preparing a dielectric ceramic composition of Chemical Formula 1 includes mixing BaCO 3 , ZnO, and Ta 2 O 5 powders by wet mixing, drying, calcining at about 1200 ° C. for about 4 hours, and then grinding to prepare BZT powder; Adding B 2 O 3 and CuO powder to the calcined BZT powder, followed by wet mixing and drying; It comprises a step of sintering for about 2 hours at 850 ~ 950 ℃ after pressure molding the dry sample.

이 때, 상기 BaCO3, ZnO, Ta2O5는 가장 안정된 기지상을 이룰수 있는 3 : 1 : 1의 몰비로 습식혼합된다.At this time, BaCO 3 , ZnO, Ta 2 O 5 is wet-mixed in a molar ratio of 3: 1: 1 which can achieve the most stable known phase.

본 발명에 있어서, 상기 BZT [Ba(Zn1/3Ta2/3)O3] 분말 제조시의 하소 온도와 하소 시간은 각각 약 1200℃와 약 4시간인 것이 바람직한데, 상기 온도와 시간을 벗어날 경우 BZT 분말의 하소가 잘 되지 않는다.In the present invention, the calcination temperature and the calcination time in the production of the BZT [Ba (Zn 1/3 Ta 2/3 ) O 3 ] powder are preferably about 1200 ° C. and about 4 hours, respectively. If it does, the BZT powder will not be calcined.

또한, 본 발명에 있어서, 상기 유전체 세라믹 조성물 제조시의 소결 온도와 소결 시간은 각각 850 ~ 950℃와 약 2시간인 것이 바람직한데, 상기 온도와 시간을 벗어날 경우 소결이 잘 되지 않거나 소결불량이 발생하는 문제점이 있다. In addition, in the present invention, the sintering temperature and the sintering time during the manufacture of the dielectric ceramic composition are preferably 850 to 950 ° C. and about 2 hours, respectively. There is a problem.

이하, 본 발명을 실시예를 참조하여 상세히 설명하고자 하나 본 발명이 이제 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited thereto.

실시예 1∼6Examples 1-6

1. 초기 원료인 순도 99.9%의 BaCO3, ZnO, Ta2O5를 3 : 1 : 1의 몰비로 평량한 후 나일론 자(nylon jar)에서 지르코니아 볼과 함께 24시간 동안 알콜 용매를 사용하여 습식 혼합하였다. 1.Basic raw material of 99.9% purity BaCO 3 , ZnO, Ta 2 O 5 was weighed in a molar ratio of 3: 1: 1, and then wetted with alcohol solvent for 24 hours with zirconia balls in nylon jar. Mixed.

2. 상기 습식 혼합물을 건조 시킨 후 약 1200℃에서 약 4시간 동안 하소한 다음 분쇄하여 BZT 분말을 제조하였다. 2. The wet mixture was dried, calcined at about 1200 ° C. for about 4 hours, and then ground to prepare BZT powder.

3. 상기 하소된 BZT 분말에 B2O3 분말 5몰%와 CuO 분말 2, 5, 10, 15, 20, 25몰%를 각각 첨가하고 알콜 용매로 습식 혼합한 후 건조하였다.3. 5 mol% of B 2 O 3 powder and 2, 5, 10, 15, 20, 25 mol% of B 2 O 3 powder and CuO powder were respectively added to the calcined BZT powder, followed by wet mixing with an alcohol solvent and drying.

4. 상기 건조 시료를 직경이 10mm, 높이가 약 5mm인 실린더형 성형체로 가압 성형 후 약 850℃에서 약 2시간 동안 소결하였다.4. The dried samples were sintered at about 850 ° C. for about 2 hours after pressure molding into cylindrical shaped bodies having a diameter of 10 mm and a height of about 5 mm.

실시예 7∼12Examples 7-12

소결온도를 870℃로 한 것을 제외하고는 상기 실시예 1∼6과 동일한 방법으로 유전체 세라믹 조성물을 제조하였다. A dielectric ceramic composition was prepared in the same manner as in Examples 1 to 6 except that the sintering temperature was set at 870 ° C.

실시예 13∼18Examples 13-18

소결온도를 900℃로 한 것을 제외하고는 상기 실시예 1∼6과 동일한 방법으로 유전체 세라믹 조성물을 제조하였다. A dielectric ceramic composition was prepared in the same manner as in Examples 1 to 6 except that the sintering temperature was 900 ° C.

실시예 19∼24Examples 19-24

소결온도를 950℃로 한 것을 제외하고는 상기 실시예 1∼6과 동일한 방법으로 유전체 세라믹 조성물을 제조하였다. A dielectric ceramic composition was prepared in the same manner as in Examples 1 to 6 except that the sintering temperature was set at 950 ° C.

실시예 25∼28Examples 25-28

하소된 BZT 분말에 CuO 5몰%와 B2O3 2, 5, 10, 20몰%를 각각 첨가하고, 소결온도를 950℃로 한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 유전체 세라믹 조성물을 제조하였다. And a dielectric ceramic composition as Example 1 except each of the addition of CuO 5 mol% and B 2 O 3 2, 5, 10, 20 mole% in the calcination BZT powder, and that the sintering temperature to 950 ℃ Was prepared.

상기와 같이 제조된 본 발명의 유전체 세라믹 조성물들은 X-선 회절분석 결과 기지상인 BZT상 외에 BaB4O7, CuO의 피크(peak)가 관찰되었다. In the dielectric ceramic compositions of the present invention prepared as described above, the peaks of BaB 4 O 7 and CuO were observed in addition to the BZT phase, which is known as a result of X-ray diffraction analysis.

또한, 상기 조성물들의 선 수축율은 17%이상으로 나타나 소결이 잘 이루어졌음을 알 수 있었다. In addition, the linear shrinkage of the compositions was found to be 17% or more it can be seen that the sintering was well done.

실험예 1Experimental Example 1

품질계수 측정Quality Factor Measurement

상기 실시예 1∼24에서 제조된 B2O3가 5몰%일 경우의 본 발명의 유전체 세라믹 조성물에 있어서, CuO의 첨가량에 따른 유전체 재료의 품질계수(Q×f0)를 소결 온도의 변화에 따라 측정하고 그 결과를 도 1에 나타냈다.In the dielectric ceramic composition of the present invention when B 2 O 3 prepared in Examples 1 to 24 is 5 mol%, the quality factor (Q × f 0 ) of the dielectric material according to the addition amount of CuO is changed in the sintering temperature. Was measured according to the results, and the results are shown in FIG. 1.

상기 실험 결과, 870℃에서 소결한 시료 조성에서 B2O3를 5몰%, CuO를 10몰% 첨가한 경우에 품질계수(Q×f0)가 10,000 GHz 이상의 높은 값을 나타냈다.As a result of the experiment, when 5 mol% of B 2 O 3 and 10 mol% of CuO were added in the sample composition sintered at 870 ° C, the quality factor (Q × f 0 ) showed a high value of 10,000 GHz or more.

또한, 상기 실시예 25∼28에서 제조된 소결온도가 950℃이고 CuO 5몰%와 B2O3 2, 5, 10, 20몰%를 포함하여 구성되는 본 발명의 유전체 세라믹 조성물의 품질계수(Q×f0)를 측정하고 그 결과를 도 2에 나타냈다.In addition, the quality coefficient of the dielectric ceramic composition of the present invention comprising a sintering temperature of 950 ℃ prepared in Examples 25 to 28 and 5 mol% CuO and B 2 O 3 2, 5, 10, 20 mol% ( Q x f 0 ) was measured and the results are shown in FIG. 2.

상기 실험에서 품질계수는 Hakki & Coleman 방법으로 측정하였다.In this experiment, the quality factor was measured by Hakki & Coleman method.

실험예 2Experimental Example 2

유전율 측정Permittivity measurement

상기 실시예 1∼24에서 제조된 B2O3가 5몰%일 경우의 본 발명의 유전체 세라믹 조성물에 있어서, CuO의 첨가량에 따른 유전체 재료의 유전율(

Figure 112003050091541-pat00019
r)을 소결 온도의 변화에 따라 측정하고 그 결과를 도 3에 나타냈다.In the dielectric ceramic composition of the present invention when B 2 O 3 prepared in Examples 1 to 24 is 5 mol%, the dielectric constant of the dielectric material according to the amount of CuO added (
Figure 112003050091541-pat00019
r ) was measured according to the change of sintering temperature and the result is shown in FIG.

상기 실험 결과, 870℃에서 소결한 시료 조성에서 B2O3를 5몰%, CuO를 10몰% 첨가한 경우에 유전율이 약 26의 값을 보였다. As a result of the experiment, the dielectric constant was about 26 when 5 mol% of B 2 O 3 and 10 mol% of CuO were added in the sample composition sintered at 870 ° C.

또한, 상기 실시예 25∼28에서 제조된 소결온도가 950℃이고 CuO 5몰%와 B2O3 2, 5, 10, 20몰%를 포함하여 구성되는 본 발명의 유전체 세라믹 조성물의 유전 율을 측정하고 그 결과를 도 4에 나타냈다.Further, a dielectric rate of a dielectric ceramic composition of the present invention that the embodiments 25-28 manufactured sintering temperature is 950 ℃ in a configuration including CuO 5 mol% and B 2 O 3 2, 5, 10, 20 mol% It measured and the result was shown in FIG.

상기 실험에서 유전율은 Hakki & Coleman 방법으로 측정하였다.In this experiment, the dielectric constant was measured by Hakki & Coleman method.

실험예 3Experimental Example 3

상기 실시예 13∼18에서 제조된 본 발명의 유전체 세라믹 조성물에 있어서, CuO의 첨가량에 따른 유전체 재료의 공진주파수 온도계수(

Figure 112003050091541-pat00020
f)를 측정하고 그 결과를 도 5에 나타냈다.In the dielectric ceramic composition of the present invention prepared in Examples 13 to 18, the resonance frequency temperature coefficient of the dielectric material according to the amount of CuO added (
Figure 112003050091541-pat00020
f ) was measured and the result is shown in FIG.

상기 실험에서 공진주파수 온도계수는 cavity법으로 측정하였다.In this experiment, the resonance frequency temperature coefficient was measured by the cavity method.

상기 실험 결과, 2몰%~25몰%의 CuO 조성범위내에서 -10~10ppm/℃의 안정한 공진 주파수 온도계수를 나타냈다.As a result of the experiment, a stable resonant frequency temperature coefficient of -10 to 10 ppm / ° C was shown within a CuO composition range of 2 mol% to 25 mol%.

본 발명에 있어서, 5몰%의 B2O3와 10몰%의 CuO를 첨가하고 950℃에서 2시간 소결한 유전체 세라믹 조성물이 유전율(Er)은 29 그리고 품질계수(Q×f0)는 11500으로 가장 바람직한 특성을 나타냈다.In the present invention, the dielectric ceramic composition added with 5 mol% B 2 O 3 and 10 mol% CuO and sintered at 950 ° C. for 2 hours has a dielectric constant (Er) of 29 and a quality factor of (Q × f 0 ) of 11500. The most preferable characteristic was shown.

이상에서 설명한 바와 같이, 본 발명의 유전체 세라믹 조성물은, 유전율(

Figure 112003050091541-pat00021
r)이 25∼30이고, 품질계수(Q×f0)가 5,000∼12,000 GHz이며, 공진 주파수 온도계수(
Figure 112003050091541-pat00022
f)의 범위가 ±10 ppm/℃으로, 고주파용 유전체 세라믹스의 재료로 사용 될 수 있다.As described above, the dielectric ceramic composition of the present invention has a dielectric constant (
Figure 112003050091541-pat00021
r ) is 25 to 30, the quality factor (Q × f 0 ) is 5,000 to 12,000 GHz, and the resonance frequency temperature coefficient (
Figure 112003050091541-pat00022
f ) in the range of ± 10 ppm / ℃, can be used as a material for high frequency dielectric ceramics.

또한, 본 발명의 유전체 세라믹 조성물은, 950℃ 이하의 저온에서도 소결이 가능하며, 저온 소결용 유전체 세라믹 부품에 요구되는 유전특성도 충족시키므로 수동소자의 후막 적층 칩 소자의 개발에 널리 활용될 수 있다.In addition, the dielectric ceramic composition of the present invention can be sintered even at a low temperature of 950 ° C. or lower, and also satisfies the dielectric properties required for low-temperature sintering dielectric ceramic components, and thus can be widely used for the development of thick film stacked chip devices of passive devices. .

Claims (4)

하기 화학식 1의 유전체 세라믹 조성물. A dielectric ceramic composition of formula [화학식 1][Formula 1] Ba(Zn1/3Ta2/3)O3 ·x B2O3 ·y CuO Ba (Zn 1/3 Ta 2/3 ) O 3 · x B 2 O 3 · y CuO (상기 식에서 5몰%
Figure 112006003046373-pat00023
x
Figure 112006003046373-pat00024
20몰%, 5몰%
Figure 112006003046373-pat00025
y
Figure 112006003046373-pat00026
25몰% 이다.)(5 mol% in the above formula
Figure 112006003046373-pat00023
x
Figure 112006003046373-pat00024
20 mol%, 5 mol%
Figure 112006003046373-pat00025
y
Figure 112006003046373-pat00026
25 mole%) BaCO3, ZnO, Ta2O5 분말을 습식 혼합한 후 건조시켜 약 1200℃에서 약 4시간 동안 하소한 다음 분쇄하여 BZT 분말을 제조하는 단계와;Wet mixing BaCO 3 , ZnO, Ta 2 O 5 powders, drying and calcining at about 1200 ° C. for about 4 hours, and then grinding to prepare BZT powders; 상기 하소된 BZT 분말에 B2O3와 CuO 분말을 첨가하고 습식혼합한 후 건조하는 단계와;Adding B 2 O 3 and CuO powder to the calcined BZT powder, followed by wet mixing and drying; 상기 건조 시료를 가압 성형한 후 850 ~ 950℃에서 약 2시간 동안 소결하는 단계를 포함하여 구성되는, 상기 화학식 1의 유전체 세라믹 조성물의 제조방법.Comprising the step of sintering for about 2 hours at 850 ~ 950 ℃ after pressing the dry sample, the method of producing a dielectric ceramic composition of the formula (1). 제2항에 있어서, 상기 BaCO3, ZnO, Ta2O5가 3 : 1 : 1의 몰비로 습식혼합되는 것을 특징으로 하는, 상기 화학식 1의 유전체 세라믹 조성물의 제조방법.The method of claim 2, wherein BaCO 3 , ZnO, and Ta 2 O 5 are wet-mixed at a molar ratio of 3: 1: 1. 제2항에 있어서, 상기 B2O3가 5몰% ~ 20몰%, CuO가 5몰% ~ 25몰%로 첨가되는 것을 특징으로 하는, 상기 화학식 1의 유전체 세라믹 조성물의 제조방법.3. The method of claim 2, wherein B 2 O 3 is added in an amount of 5 mol% to 20 mol% and CuO is 5 mol% to 25 mol%.
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