KR100561973B1 - 완전 일체식 전극 피드스루 메인 절연체를 갖는 레이저 챔버 - Google Patents
완전 일체식 전극 피드스루 메인 절연체를 갖는 레이저 챔버 Download PDFInfo
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- 239000012212 insulator Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical group F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002592 krypton Chemical class 0.000 claims description 5
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- 239000012777 electrically insulating material Substances 0.000 claims 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 239000012772 electrical insulation material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 21
- 229910001369 Brass Inorganic materials 0.000 description 8
- 239000010951 brass Substances 0.000 description 8
- 241000218206 Ranunculus Species 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910017090 AlO 2 Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
-
- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
-
- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
- H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
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Abstract
Description
Claims (24)
- 고전력을 전기 방전 레이저의 밀봉된 챔버의 벽을 통해 전극 길이를 정의하는, 챔버내의 가늘고 긴 전극에 도전시키는 장치에 있어서,상기 전극 길이보다 더 긴 전기 절연 재료의 단일 피스 메인 절연체를 포함하고, 상기 메인 절연체는,제1 연마된 실질적으로 평평한 표면부 및 상기 제1 연마된 실질적으로 평평한 표면부에 실질적으로 평행인 제2 연마된 실질적으로 평평한 표면부; 및상기 단일 피스 메인 절연체와 일체이며 상기 제1 연마된 실질적으로 평평한 표면부로부터 뻗어 있는 복수의 실질적으로 원통형상의 피드스루 절연체부;를 포함하고,실질적으로 원통형상인 구멍은 상기 원통형상의 피드스루 절연체부 및 상기 제1 및 제2 연마된 실질적으로 평평한 표면부를 통하여 실질적으로 동축방향으로 뻗는 것을 특징으로 하는 장치.
- 제 1 항에 있어서, 상기 피드스루 절연체부는 실질적으로 동심의 외측 그루브를 더 포함하는 것을 특징으로 하는 장치.
- 제 1 항에 있어서, 상기 제1 및 제2 연마된 실질적으로 평평한 표면부는 약 16 마이크로인치(0.4미크론)로 표면 처리되는 것을 특징으로 하는 장치.
- 제 1 항에 있어서, 상기 전기 절연 재료는 약 99.5 퍼센트 이상의 순도를 갖는 알루미나 세라믹인 것을 특징으로 하는 장치.
- 제 1 항에 있어서, 상기 제1 및 제2 연마된 실질적으로 평평한 표면부에 대하여 압축된 페이스 시일을 더 포함하고, 상기 페이스 시일의 각각이 상기 실질적으로 원통형상의 구멍을 실질적으로 동심을 이루어 둘러싸고 있는 것을 특징으로 하는 장치.
- 제 5 항에 있어서, 상기 페이스 시일의 조성물은 상기 전기 절연 재료와 상이한 것을 특징으로 하는 장치.
- 제 6 항에 있어서, 상기 조성물은 니켈-동 합금 기판상에 주석 도금된 것을 특징으로 하는 장치.
- 제 5 항에 있어서, 상기 페이스 시일은 문자 "C"의 형상과 유사한 단면 형상을 갖는 실질적으로 둥근 고리 형상의 링으로서 구성되고 상기 단면 형상의 개방부는 상기 링의 외경 방향으로 향하는 것을 특징으로 하는 장치.
- 제 1 항에 있어서,상기 실질적으로 원통형상의 구멍을 통해 실질적으로 동축으로 배치된 적어도 하나의 피드스루 전기 도전체; 및상기 피드스루 전기 도전체에 연결된 전극;을 더 포함하고, 상기 전극은 상기 제2 연마된 실질적으로 평평한 표면부에 인접하여 배치된 것을 특징으로 하는 장치.
- 제 9 항에 있어서, 상기 전극은 캐소드인 것을 특징으로 하는 장치.
- 제 1 항에 있어서, 상기 전기 방전 레이저는 플루오르화 아르곤 엑시머 레이저, 플루오르화 크립톤 엑시머 레이저, 및 플루오르(F2)분자 레이저로 구성된 그룹으로부터 선택되는 것을 특징으로 하는 장치.
- 고전력을 도전시키는 장치에 있어서,전기 절연 재료의 메인 절연체를 포함하고, 상기 메인 절연체는제1 연마된 실질적으로 평평한 표면부 및 상기 제1 연마된 실질적으로 평평한 표면부에 실질적으로 평행한 제2 연마된 실질적으로 평평한 표면부; 및상기 메인 절연체와 일체이고 상기 제1 연마된 실질적으로 평평한 표면부로부터 뻗어 있는 복수의 실질적으로 원통형상의 피드스루 절연체부;를 포함하고, 실질적으로 원통형상인 구멍은 상기 원통형상의 피드스루 절연체부 및 상기 제1 및 제2 연마된 실질적으로 평평한 표면부를 통하여 실질적으로 동축으로 뻗어 있는 것을 특징으로 하는 장치.
- 동작 온도 범위에서 동작하여 전기방전을 생성하는 방법에 있어서, 상기 방법은,복수의 피드스루 전기 도전체를 갖는 엔클로저 벽을 제공하는 단계;상기 엔클로저 내에 한쌍의 방전 전극을 배치하는 단계; 및상기 방전 전극 사이에서 방전을 일으키기 위해 상기 피드스루 도전체를 통해 전력을 도전시키는 단계를 포함하고,상기 피드스루 전기 도전체의 각각은, 전기 절연 재료로 만들어진 단일 피스 메인 절연체의 제1 연마된 실질적으로 평평한 표면부와 일체이며 그로부터 뻗어있는 실질적으로 튜브형인 피드스루 절연체부에 의해 실질적으로 원통형상으로 둘러쌓여있고, 상기 단일 피스 메인 절연체는 상기 제1 연마된 실질적으로 평평한 표면부에 실질적으로 평행인 제2 연마된 실질적으로 평평한 표면부를 더 포함하는 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 피드스루 절연체부는 실질적으로 동심의 외측 그루브를 더 포함하는 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 제1 및 제2 연마된 실질적으로 평평한 표면부가 약 16 마이크로인치(0.4미크론)로 표면 처리되는 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 전기 절연 재료는 약 99.5퍼센트 이상의 순도를 갖는 알루미나 세라믹인 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 제1 및 제2 연마된 실질적으로 평평한 표면부에 대하여 페이스 시일이 압축되어 있고, 상기 페이스 시일의 각각이 상기 피드스루 전기 도전체중 하나를 실질적으로 동심을 이루어 둘러싸고 있는 것을 특징으로 하는 방법.
- 제 17 항에 있어서, 상기 페이스 시일의 조성물은 상기 전기 절연 재료와 상이한 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 상기 조성물은 니켈-동 합금 기판상에 주석 도금된 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 상기 페이스 시일은 상기 동작 온도의 범위에서 상기 동작 온도의 변화에 대응하여 상기 제1 및 제2 연마된 실질적으로 평평한 표면부에 걸쳐 추종하여 움직이는 것을 특징으로 하는 방법.
- 제 17 항에 있어서, 상기 페이스 시일은 문자 "C"의 형상과 유사한 단면 형상을 갖는 실질적으로 둥근 고리 형상의 링으로서 구성되고 상기 단면 형상의 개방부는 상기 링의 외경 방향으로 향하는 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 동작 온도의 범위는, 주위온도에서부터 이 주위온도보다 100℃ 높은 온도에 걸쳐있는 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 전극은 캐소드인 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 전기 방전 레이저는 플루오르화 아르곤 엑시머 레이저, 플루오르화 크립톤 엑시머 레이저, 및 플루오르(F2) 분자 레이저로 구성된 그룹으로부터 선택되는 것을 특징으로 하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/386,938 US6208674B1 (en) | 1998-09-18 | 1999-08-31 | Laser chamber with fully integrated electrode feedthrough main insulator |
US09/386,938 | 1999-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020026595A KR20020026595A (ko) | 2002-04-10 |
KR100561973B1 true KR100561973B1 (ko) | 2006-03-22 |
Family
ID=23527722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020027002294A KR100561973B1 (ko) | 1999-08-31 | 2000-08-17 | 완전 일체식 전극 피드스루 메인 절연체를 갖는 레이저 챔버 |
Country Status (7)
Country | Link |
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US (1) | US6208674B1 (ko) |
EP (1) | EP1218984A4 (ko) |
JP (1) | JP3655184B2 (ko) |
KR (1) | KR100561973B1 (ko) |
AU (1) | AU6914200A (ko) |
TW (1) | TW496024B (ko) |
WO (1) | WO2001017075A1 (ko) |
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1999
- 1999-08-31 US US09/386,938 patent/US6208674B1/en not_active Expired - Lifetime
-
2000
- 2000-08-17 WO PCT/US2000/022643 patent/WO2001017075A1/en active IP Right Grant
- 2000-08-17 KR KR1020027002294A patent/KR100561973B1/ko active IP Right Grant
- 2000-08-17 AU AU69142/00A patent/AU6914200A/en not_active Abandoned
- 2000-08-17 EP EP00957540A patent/EP1218984A4/en not_active Withdrawn
- 2000-08-30 TW TW089117639A patent/TW496024B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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JP2001168423A (ja) | 2001-06-22 |
US6208674B1 (en) | 2001-03-27 |
AU6914200A (en) | 2001-03-26 |
WO2001017075A1 (en) | 2001-03-08 |
KR20020026595A (ko) | 2002-04-10 |
EP1218984A4 (en) | 2006-03-22 |
TW496024B (en) | 2002-07-21 |
EP1218984A1 (en) | 2002-07-03 |
JP3655184B2 (ja) | 2005-06-02 |
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