KR100557629B1 - A method for detecting a coma error of lens - Google Patents

A method for detecting a coma error of lens Download PDF

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KR100557629B1
KR100557629B1 KR1019990067986A KR19990067986A KR100557629B1 KR 100557629 B1 KR100557629 B1 KR 100557629B1 KR 1019990067986 A KR1019990067986 A KR 1019990067986A KR 19990067986 A KR19990067986 A KR 19990067986A KR 100557629 B1 KR100557629 B1 KR 100557629B1
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error
lens
coma
vernier
pattern
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KR20010059990A (en
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권원택
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주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 렌즈의 코마에러 측정방법에 관한 것으로, 버니어의 양쪽 가장자리에 셀패턴(cell pattern)의 크기와 비슷한 크기의 패턴을 형성하여 화학적 기계적 연마공정에 손상되지 않고, 렌즈의 코마에러에 의한 오차를 측정할 수 있는 버니어를 형성함으로써 반도체 리소그라피 장비에 구비된 렌즈의 코마에러를 보다 정확하고 용이하게 측정할 수 있으므로 렌즈의 코마에러에 의한 중첩오차로 인하여 발생되는 제품의 수율저하를 방지하여 반도체 소자의 제조공정수율 및 신뢰성을 향상시킬 수 있는 기술이다.The present invention relates to a method for measuring the coma error of a lens, by forming a pattern similar to the size of the cell pattern (cell pattern) on both edges of the vernier does not damage the chemical mechanical polishing process, the error due to the coma error of the lens By forming a vernier that can measure, the coma error of the lens included in the semiconductor lithography equipment can be measured more accurately and easily, thereby preventing the yield reduction of the product caused by the overlapping error caused by the coma error of the lens. It is a technology that can improve the manufacturing process yield and reliability.

Description

렌즈의 코마에러 측정방법{A method for detecting a coma error of lens}A method for detecting a coma error of lens

도 1 은 종래기술에 따른 렌즈의 코마에러 측정방법을 도시한 단면도. 1 is a cross-sectional view showing a coma error measuring method of a lens according to the prior art.

도 2 는 본 발명에 따른 렌즈의 코마에러를 측정하기 위한 모 버니어의 평면도 및 단면도.2 is a plan view and a cross-sectional view of a parent vernier for measuring coma error of a lens according to the present invention;

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도 3 은 본 발명에 따른 렌즈의 코마에러 측정방법을 도시한 단면도. 3 is a cross-sectional view showing a coma error measuring method of a lens according to the present invention.

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< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>

10, 30 : 렌즈 11, 31 : 웨이퍼10, 30: lens 11, 31: wafer

12, 32 : 셀패턴 13, 33 : 버니어12, 32: cell pattern 13, 33: vernier

20 : 광 차단부(크롬) 21 : 석영기판20: light shielding part (chrome) 21: quartz substrate

본 발명은 반도체 리소그라피 장비에 구비된 렌즈의 코마에러(comma error) 측정방법에 관한 것으로, 특히 버니어의 최외곽의 패턴을 실제의 셀패턴(cell pattern)의 크기와 비슷하게 형성하여 셀패턴의 오차를 보정할 수 있는 렌즈의 코마에러 측정방법에 관한 것이다.The present invention relates to a method for measuring a comma error of a lens provided in a semiconductor lithography apparatus. In particular, the outermost pattern of the vernier is formed to be similar to the actual cell pattern to reduce the error of the cell pattern. The present invention relates to a method for measuring coma error of a lens that can be corrected.

일반적으로 코마에러는 렌즈, 거울 등의 광학계에 의해 결상하는 경우 물체에 대응하여 생기는 상이 이상적인 상으로부터 기하광학적으로 벗어나는 것을 말한다, In general, a coma error refers to an image optically deviating from an ideal image generated by an optical system such as a lens or a mirror.

특히, 코마에러는 렌즈에서 나오는 빛의 파단면이 호 형태를 이루지 않고 3차함수와 같은 형태로 이루어져서 발생하는 현상이다. 이러한 코마에러는 최종적으로 패턴의 형태에 영향을 미치고, 동시에 패턴의 간격에 따라 이동이 일어나게 된다. In particular, the coma error is a phenomenon that occurs when the fracture surface of the light emitted from the lens does not form an arc but has a form similar to a cubic function. This coma error finally affects the shape of the pattern, and at the same time, movement occurs according to the pattern interval.

즉, 패턴의 형태와 이동에 동시에 영향을 미치는 것은 이러한 코마에러에 의해서만 가능하다. 또한, 패턴모양에의 영향은 특히 콘택홀 패턴에서 잘 나타나게 되는데 입사되는 빛의 모양이 혜성(comma)모양으로 입사되어 한쪽이 경사지는 모양으로 나타나게 된다. That is, it is possible only by this coma error to affect the shape and movement of the pattern at the same time. In addition, the influence on the pattern shape is particularly well represented in the contact hole pattern, in which the shape of the incident light is incident on the comet shape, and the one side is inclined.

한편, 스테퍼(STEPPER)나 스캐너 등의 리소그라피 장비에 사용되는 렌즈는 렌즈자체에 코마에러를 가지고 있는데, 상기 코마에러는 렌즈의 중심부분을 통과하는 빛은 대체로 한점에 집속되는데, 중심에서 멀어질수록 넓은 범위로 분포하며 그 크기는 광축에서 물점까지의 거리와 렌즈의 벌림각의 제곱에 비례한다. On the other hand, lenses used in lithography equipment such as STEPPER and scanners have a coma error in the lens itself, and the light passing through the central part of the lens is generally focused at one point. It is distributed over a wide range, and its size is proportional to the distance from the optical axis to the dot and the square of the lens opening angle.

도 1 은 종래기술에 따른 렌즈의 코마에러 측정방법을 도시한 단면도이다. 1 is a cross-sectional view showing a coma error measuring method of a lens according to the prior art.

상기 도면에 도시된 바와 같이, 셀패턴(12)에 오차가 있는 경우 버니어(13)는 10㎛ 이상의 크기로 구성되어 렌즈(10)의 코마에러에 의한 중첩오차를 검출하지 못한다. 이로 인하여 0.18㎛ 이하인 실제 셀패턴(12)에서는 ⓐ와 같이 중첩오차가 발생되는데 버니어(13)에서는 정상적으로 나타나 보정이 불가능한 상태에서 반도체 리소그라피 공정에서의 미세패턴 형성 정도를 저하시켜 측정값의 정도가 떨어져 보다 정확한 코마에러를 측정할 수 없어 반도체 소자의 제조공정수율 및 신뢰성을 저하시키는 문제점이 있다.As shown in the figure, when there is an error in the cell pattern 12, the vernier 13 is configured to a size of 10㎛ or more does not detect the overlapping error due to the coma error of the lens 10. As a result, in the actual cell pattern 12 having a thickness of 0.18 μm or less, an overlapping error occurs as shown in ⓐ. In the vernier 13, the overlapping error occurs normally, and thus the fine pattern formation in the semiconductor lithography process is reduced and the degree of the measured value is reduced. Since more accurate coma errors cannot be measured, there is a problem of lowering the manufacturing process yield and reliability of the semiconductor device.

따라서 본 발명은 상기의 문제점을 해결하기 위하여 버니어의 최외곽에 셀패턴의 크기와 비슷한 크기의 패턴을 형성하여 셀에서 코마에러에 의해 발생되는 정렬오차가 버니어에서도 동일하게 나타나게 하여 코마에러를 보다 정확하게 파악할 수 있는 반도체 리소그라피 장비의 코마에러 측정방법을 제공함에 있다.Accordingly, in order to solve the above problem, the present invention forms a pattern having a size similar to the size of the cell pattern at the outermost part of the vernier so that the alignment error caused by the coma error in the cell appears the same in the vernier, thereby more accurately correcting the coma error. The present invention provides a method for measuring coma error of semiconductor lithography equipment.

상기 목적을 달성하기 위해, 본 발명에 따른 렌즈의 코마에러 측정방법은,In order to achieve the above object, the method of measuring the coma error of the lens according to the present invention,

버니어의 외곽 영역에 셀 패턴과 같은 선폭의 보조 패턴을 더 형성하여 셀패턴에서 발생하는 코마에러에 의한 오차를 측정하는 것을 특징으로 한다.An auxiliary pattern having the same line width as that of the cell pattern is further formed in the outer region of the vernier to measure an error caused by a coma error occurring in the cell pattern.

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이하, 첨부된 도면을 참조하여 본 발명에 대해 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described for the present invention.

도 2 는 본 발명에 따른 렌즈의 코마에러를 측정하기 위한 모 버니어의 평면도 및 단면도로서, 상기 모 버니어의 가로×세로의 크기는 20×20㎛으로 하고, CMP공정의 연마에 취약한 바형(bar type)을 배제하여 형성한다. 2 is a plan view and a cross-sectional view of a mother vernier for measuring the coma error of the lens according to the present invention, the horizontal × vertical size of the mother vernier is 20 × 20㎛, bar type vulnerable to the polishing of the CMP process (bar type To exclude).

상기 모 버니어는 정사각형의 크롬패턴으로 형성된 광 차단부(20) 내부에 20 ×20㎛(ⓨ)의 투명창이 구비되고, 상기 투명창의 외곽으로 0.2㎛(ⓧ)의 광 차단부(20)에 의해 폭이 0.2㎛(ⓧ')인 투명창이 이격되어 구비되어 형성된다. The parent vernier is provided with a transparent window of 20 × 20 μm (ⓨ) inside the light blocking unit 20 formed of a square chrome pattern, and by the light blocking unit 20 of 0.2 μm (ⓧ) outside the transparent window. A transparent window having a width of 0.2 μm (μ ′ ′) is provided spaced apart from each other.

도 3 은 본 발명에 따른 렌즈의 코마에러 측정방법을 도시한 단면도로서, 상기와 같은 형태의 버니어(33)를 사용하여 코마에러에 의한 오차를 측정한다. 3 is a cross-sectional view illustrating a method for measuring a coma error of a lens according to the present invention, and the error due to the coma error is measured using the vernier 33 of the above-described form.

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버니어(33)의 양쪽 가장자리에 셀패턴(32)과 같은 크기의 패턴을 형성하여 셀패턴(32)에서 나타나는 오차 ⓐ를 버니어(33)에 의해 오차ⓑ를 측정하여 셀패턴의 오차를 보정할 수 있다. By forming a pattern having the same size as the cell pattern 32 on both edges of the vernier 33, the error? Of the cell pattern 32 can be measured by the vernier 33 to correct the error of the cell pattern. have.

이상 상술한 바와 같이, 반도체 소자의 리소그라피 장비등에서 발생하는 코마에러를 측정하기 위해 버니어의 양쪽 가장자리에 셀패턴(cell pattern)의 크기와 비슷한 크기의 패턴을 형성하여 화학적 기계적 연마공정에 손상되지 않고, 렌즈의 코마에러에 의한 오차를 측정할 수 있는 버니어를 형성함으로써 반도체 리소그라피 장비에 구비된 렌즈의 코마에러를 보다 정확하고 용이하게 측정할 수 있으므로 렌즈의 코마에러에 의한 중첩오차로 인하여 발생되는 제품의 수율저하를 방지하여 반도체 소자의 제조공정수율 및 신뢰성을 향상시킬 수 있는 이점이 있다.As described above, in order to measure coma errors occurring in the lithography equipment of the semiconductor device, a pattern having a size similar to the size of a cell pattern is formed on both edges of the vernier, so that the chemical mechanical polishing process is not damaged. By forming a vernier that can measure the error caused by the coma error of the lens, the coma error of the lens included in the semiconductor lithography equipment can be measured more accurately and easily, so that the product generated by the overlap error caused by the coma error of the lens There is an advantage in that the yield can be prevented to improve the manufacturing process yield and reliability of the semiconductor device.

Claims (3)

반도체 리소그라피 장비에 구비된 렌즈의 코마에러 측정방법에 있어서,In the method of measuring the coma error of the lens provided in the semiconductor lithography equipment, 버니어의 외곽 영역에 셀 패턴과 같은 선폭의 보조 패턴을 더 형성하여 셀패턴에서 발생하는 코마에러에 의한 오차를 측정하는 것을 특징으로 하는 렌즈의 코마에러 측정방법.And forming an auxiliary pattern having the same line width as the cell pattern in the outer region of the vernier to measure the error caused by the coma error occurring in the cell pattern. 제 1 항에 있어서, The method of claim 1, 상기 버니어는 20×20㎛ 크기의 투명창이며, 상기 버니어의 외곽에 선폭이 0.2㎛인 크롬패턴을 형성하고, 상기 크롬 패턴의 외곽에 선폭이 0.2㎛인 박스형의 투명창을 형성하는 것을 특징으로 하는 렌즈의 코마에러 측정방법. The vernier is a transparent window having a size of 20 × 20 μm, and a chrome pattern having a line width of 0.2 μm is formed on the outside of the vernier, and a box-shaped transparent window having a line width of 0.2 μm is formed on the outside of the chrome pattern. Method of measuring coma error of lens to do. 삭제delete
KR1019990067986A 1999-12-31 1999-12-31 A method for detecting a coma error of lens KR100557629B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917714A (en) * 1995-06-29 1997-01-17 Nec Corp Alignment method and alignment error inspection method
JPH0933213A (en) * 1995-07-18 1997-02-07 Nec Corp Measuring method for position error and manufacture of semiconductor device
JPH09244222A (en) * 1996-03-08 1997-09-19 Mitsubishi Electric Corp Reticle for measuring superposition error, method for measuring superposition error by using the reticle and mark for measuring superposition error
KR19980082846A (en) * 1997-05-09 1998-12-05 윤종용 Method for measuring alignment error of vernier pattern and pattern using the same
JPH11184069A (en) * 1997-12-22 1999-07-09 Canon Inc Method and device for exposing semiconductor and reticle used for it

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917714A (en) * 1995-06-29 1997-01-17 Nec Corp Alignment method and alignment error inspection method
JPH0933213A (en) * 1995-07-18 1997-02-07 Nec Corp Measuring method for position error and manufacture of semiconductor device
JPH09244222A (en) * 1996-03-08 1997-09-19 Mitsubishi Electric Corp Reticle for measuring superposition error, method for measuring superposition error by using the reticle and mark for measuring superposition error
KR19980082846A (en) * 1997-05-09 1998-12-05 윤종용 Method for measuring alignment error of vernier pattern and pattern using the same
JPH11184069A (en) * 1997-12-22 1999-07-09 Canon Inc Method and device for exposing semiconductor and reticle used for it

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