KR100508901B1 - Organic silicate polymer and insulation film comprising the same - Google Patents

Abstract

The present invention relates to an organosilicate polymer having excellent mechanical properties and low dielectric properties. In particular, the cyclic siloxane compound alone or the cyclic siloxane compound and the silane compound or the silane oligomer are mixed with an organic solvent, followed by addition of water and a catalyst. A method for producing an organosilicate polymer comprising the step of hydrolysis and condensation reaction, and a composition for forming an insulating film of a semiconductor device using the organosilicate polymer produced by the method, and a method for producing an insulating film of a semiconductor device coated with the composition And an insulating film produced by this manufacturing method.

The organosilicate polymer prepared according to the present invention can not only be used as a low dielectric wiring interlayer insulating film which can reduce the speed and power consumption of semiconductor devices and significantly reduce the mutual interference phenomenon of metal wiring, When applied, the film obtained is excellent in insulation and excellent in both uniformity, dielectric constant, and mechanical properties of the coating film.

Description

Organosilicate Polymer and Insulating Film Containing the Same {ORGANIC SILICATE POLYMER AND INSULATION FILM COMPRISING THE SAME}

The present invention relates to an organosilicate polymer having excellent mechanical and low dielectric properties, and more particularly, to a method for preparing an organosilicate polymer having excellent mechanical and low dielectric properties, and an organosilicate polymer prepared therefrom and a semiconductor device using the same. A semiconductor device comprising a composition for forming an insulating film, a method for producing an insulating film to which the composition is applied, and an insulating film produced therefrom.

With the recent increase in the degree of integration of semiconductor devices, the line widths of the wires connecting the inside of the devices are rapidly decreasing. In 2003, high density devices using a circuit line width of 0.1 μm are expected to be developed.

In general, the speed of a semiconductor device is proportional to the switching speed of a transistor and the transmission speed of a signal, and the transmission speed of the signal is represented by an RC delay expressed as a product of the resistance of the wiring material and the capacitance of the interlayer insulating film. Is determined. As the degree of integration of semiconductor devices increases, the width between metal lines connecting the inside of the device becomes narrower, and the thickness becomes thinner and the length increases exponentially. The speed on the high density chip is determined by the RC delay on the high density chip rather than the switching speed. . Therefore, in order to manufacture a high speed chip, a low resistance conductor and a low dielectric constant insulating material should be used. In addition, the use of a low dielectric material may not only increase the speed of the semiconductor device, but also may reduce power consumption, and may significantly reduce cross-talk between metal wires.

IBM has recently released a prototype of a semiconductor that does not use traditional aluminum wiring and improves performance by more than 20 percent using copper wiring with high electrical conductivity. On the other hand, semiconductor devices using low dielectric materials have not yet been prototyped due to the lack of proper material development.

In the conventional interlayer insulating materials of semiconductor devices such as IC and LSI, SiO ₂ having a dielectric constant of 4.0 is mostly used, and silicate (F-SiO ₂ ) doped with fluorine as a low dielectric material is applied to some devices. However, in the case of F-SiO ₂ content of more than 6% fluorine is a thermally unstable state has a problem that it is difficult to lower the dielectric constant below 3.5 by this method. Recently, in order to solve these problems, various organic and inorganic polymers having low polarity and thermal stability have been proposed.

Organic polymers having a low dielectric constant include polyimide resins, polyarylene ether resins, aromatic hydrocarbons, perfluoro cyclobutane-containing resins and the like with or without fluorine. Most of these organic polymers have a dielectric constant of 3.0 or less, but in general, the glass transition temperature is low, so the elastic modulus at the high temperature is significantly decreased and the coefficient of linear expansion is very high. In addition, the organic polymer containing fluorine is further reduced these properties. The semiconductor manufacturing process and the packaging process rise to a high temperature of 200 to 450 ° C. during the process, and the organic polymer having such low thermal stability, elastic modulus and high linear expansion coefficient can lower the reliability of the device or the wiring board.

Recently, in order to solve the thermal stability problem of the organic polymer, development of an organosilicate polymer using an alkoxysilane-based compound has been recently underway. This method is a method of forming an organic silicate film through a curing process after hydrolyzing and condensing the organic silane. As such a material, methyl or hydrogen silses quoxane has a relatively low dielectric constant of 3.0 or less and is thermally stable at 450 ° C. However, the polysilses quoxane has a problem in that cracks are likely to occur at a thickness of 1 μm or more due to shrinkage stress generated during the curing process. In addition, the polysilses quoxane has a relatively high mechanical strength compared to the organic polymer, but there is a problem that the mechanical properties are lowered when processing is introduced to implement a dielectric constant of 2.5 or less.

Therefore, there is a need for further studies on organosilicates having higher mechanical properties while maintaining low dielectric properties.

In order to solve the above problems, the present invention provides a low-k dielectric material that can be used as a low-k dielectric interlayer insulating film that can reduce the speed and power consumption of the semiconductor device, significantly reducing the mutual interference phenomenon of the metal wiring. It aims to do it.

Another object of the present invention is an organic silicate polymer having excellent mechanical properties and excellent low dielectric properties, a method for producing the same, a composition for forming an insulating film for a semiconductor device using the same, a method for preparing an insulating film using the composition, and an insulating film prepared therefrom. It is to provide a semiconductor device comprising a.

In order to achieve the above object, the present invention provides a method for producing two types of organosilicate polymer as follows.

The first production method comprises the steps of mixing an organic solvent with at least one cyclic siloxane compound represented by Formula 1, followed by hydrolysis and condensation by adding water and a catalyst. The process for preparing organosilicate polymers is as follows:

[Formula 1]

In the formula of Formula 1,

Each R ¹ is independently hydrogen, fluorine, aryl, vinyl, allyl, or unsubstituted or substituted fluorine, straight or branched alkyl having 1 to 4 carbon atoms,

R ² is hydrogen linear or branched alkyl of 1 to 4 carbon atoms,

k and l are each an integer of 3-10.

In the second production method, in the method for producing an organosilicate polymer, at least one cyclic siloxane compound represented by Formula 1 and a silane compound or a silane oligomer are mixed with an organic solvent, followed by addition of water and a catalyst to It is a method for producing an organosilicate polymer comprising the step of decomposition and condensation reaction.

In another aspect, the present invention provides a composition for forming an insulating film of a semiconductor device comprising an organosilicate polymer produced by any one of the two manufacturing methods, and the insulating film of the semiconductor device is applied and cured.

Specifically, in the composition for insulating film formation of a semiconductor element,

a) organosilicon prepared by the method for preparing each of the organosilicate polymers

   Yit polymers; And

b) organic solvent

It provides a composition for forming an insulating film comprising a.

In addition, the composition for forming an insulating film

c) an additive selected from the group consisting of organic molecules, organic polymers, organic dendrimers, pH adjusters, colloidal silica, and surfactants.

In addition, the present invention is a method of manufacturing an insulating film of a semiconductor device,

a) organosilicon prepared by the method for preparing each of the organosilicate polymers

   Providing a free polymer;

b) dissolving the organosilicate polymer of step a) and, if necessary, an additive in a solvent

   Providing a composition for forming an insulating film;

c) applying the solution of the organosilicate polymer of step b) to the substrate of the semiconductor device.

   Forming an insulating film; And

d) drying and baking the insulating film applied in step c)

It provides a method for manufacturing an insulating film comprising a and a semiconductor device comprising an insulating film produced by the manufacturing method.

Hereinafter, the present invention will be described in detail.

The inventors of the present invention, while studying a material excellent in mechanical properties and low dielectric properties, the cyclic siloxane compound alone or a cyclic siloxane compound and a silane compound or a silane oligomer are mixed with an organic solvent, water and catalyst The organosilicate polymer was prepared by adding and hydrolyzing and condensation reaction. As a result, not only the mechanical properties and the low dielectric properties were excellent, but also the insulation property of the insulating film to which it was applied was excellent, the uniformity of the coating film, the dielectric constant property, and the mechanical properties of the coating film. Confirming this excellent, based on this, the present invention was completed.

The present invention is a method of preparing an organosilicate polymer by hydrolyzing and condensing a cyclic siloxane compound alone, or a cyclic siloxane compound, and a silane compound or a silane oligomer in an organic solvent, and then adding water and a catalyst. A semiconductor device comprising a composition for forming an insulating film, a method for producing an insulating film prepared by applying and curing the composition, and an insulating film produced therefrom.

In the present invention, an organic silicate polymer having a constant molecular weight can be obtained by hydrolyzing and condensation-polymerizing one or more cyclic siloxane compounds represented by Chemical Formula 1 by adding water and a catalyst in the presence of an organic solvent. In addition, the present invention is a mixture of at least one cyclic siloxane compound represented by the formula (1) and a silane compound or silane oligomer consisting of silicon, oxygen, carbon, hydrogen, adding water and a catalyst in the presence of an organic solvent, hydrolysis and polycondensation By the reaction, an organosilicate polymer can be obtained in the form of a copolymer.

The silane compound or silane oligomer used in the present invention may be any silane compound or silane oligomer composed of silicon, oxygen, carbon, hydrogen, and in particular, a silane compound represented by the following Chemical Formula 2, or the following Chemical Formula 3, or Preference is given to using silane compounds selected from dimers or oligomers prepared from.

[Formula 2]

In the formula (2),

Each R ³ is independently straight or branched alkyl having 1 to 4 carbon atoms, optionally substituted with hydrogen, aryl, vinyl, allyl, or fluorine,

Each R ⁴ is independently acetoxy, hydroxy, or straight or branched alkoxy having 1 to 4 carbon atoms,

p is an integer of 0-2.

[Formula 3]

In the formula (3),

R ⁵ , and R ⁷ are each independently straight or branched chain alkyl having 1 to 4 carbon atoms, unsubstituted or substituted with hydrogen, aryl, vinyl, allyl, or fluorine,

R ⁶ and R ⁸ are each independently acetoxy, hydroxy, or straight or branched alkoxy having 1 to 4 carbon atoms,

M is alkylene or phenylene having 1 to 6 carbon atoms,

q and r are each an integer of 0-2.

The organic solvents used in the preparation of the organosilicate polymer of the present invention and in the hydrolysis and condensation reactions have great limitations unless the silane compounds, water, and catalyst are properly mixed or do not interfere with the hydrolysis and condensation reactions in the phase separation state. none. Examples thereof include aliphatic hydrocarbon solvents such as n-pentane, i-pentane, n-hexane, i-hexane, 2,2,4-trimethylpentane, cyclo hexane, or methylcyclo hexane; Aromatic hydrocarbon solvents such as benzene, toluene, xylene, trimethyl benzene, ethyl benzene, or methyl ethyl benzene; Methyl alcohol, ethyl alcohol, n-propanol, i-propanol, n-butanol, i-butanol, sec-butanol, t-butanol, 4-methyl 2-pentanol, cyclo hexanol, methylcyclo hexanol, or glycerol Alcohol solvents; Ketone solvents such as acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, methyl-i-butyl ketone, diethyl ketone, cyclohexanone, methylcyclohexanone, or acetylacetone; Tetrahydrofuran, 2-methyl tetrahydrofuran, ethyl ether, n-propyl ether, i-propyl ether, n-butyl ether, diglyme, dioxin, dimethyldioxine, ethylene glycol monomethyl ether, ethylene glycol monoethyl Ether, ethylene glycol-n-propyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, Or ether solvents such as propylene glycol dipropyl ether; Diethyl carbonate, methyl acetate, ethyl acetate, n-propyl acetate, i-propyl acetate, n-butyl acetate, ethyl lactate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl acetate, propylene glycol monomethyl ether acetate, propylene Ester solvents such as glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, ethylene glycol diacetate, or propylene glycol diacetate; Or N-methylpyrrolidone, formamide, N-methylformamide, N-ethylformamide, N, N-dimethylformamide, N, N-diethylformamide, N-methylacetamide, N-ethylacetide Amide solvents such as amide, N, N-dimethylacetamide, or N, N-diethylacetamide.

The solvents used in the hydrolysis and condensation reactions are all removed after the reaction to obtain an organosilicate polymer oil or powder, and then the organosilicate polymer is dissolved in an organic solvent for film formation or used in the hydrolysis and condensation reactions. The solvent, water, and reaction by-products that adversely affect the coating property in the solvent may be removed or used in a certain amount after the removal of a certain amount. The solvent may be used alone or in combination of two or more thereof.

In the present invention, it is preferable to use a catalyst to promote hydrolysis and condensation reactions. As the catalyst used for the hydrolysis and the condensation reaction, an acid catalyst or a base catalyst may be used. The usable acid catalysts are not particularly limited and include, for example, hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, hydrofluoric acid, formic acid, acetic acid, propionic acid, butanoic acid, pentanic acid, hexanoic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, Trifluoroacetic acid, oxalic acid, malonic acid, sulfonic acid, phthalic acid, fumaric acid, citric acid, maleic acid, oleic acid, methylmalonic acid, adipic acid, p-aminobenzoic acid, or p-tonluenesulfonic acid. The base catalyst that can be used is not particularly limited, but when the insulating film formed is used for a semiconductor device, it is preferable not to include metal ions that adversely affect semiconductor devices such as sodium and potassium, preferably ammonia water or organic amines. Is to use In addition, when using an inorganic base, after removing all metal ions after hydrolysis and condensation reaction, it is used as a composition for insulating film formation. The acid catalyst or the base catalyst may be used alone or in combination of two or more.

The addition amount of the catalyst can be adjusted according to the reaction conditions, it is preferably to use 0.000001 to 2 mol to 1 mol of the total silane compound used. When the added amount exceeds 2 mol per mol of the silane compound, the reaction rate is very fast even at low concentrations, making it difficult to control the molecular weight, and there is a concern that gel may easily occur.

In the method of using the catalyst, the composition may be subjected to step hydrolysis condensation reaction using an acid catalyst or a base catalyst. For example, the hydrolysis condensation reaction may be performed with an acid, followed by reaction with a base, or the hydrolysis condensation reaction may be performed with a base first, followed by reaction with an acid. The condensates may also be used after reacting with an acid catalyst and a base catalyst, respectively.

In the hydrolysis condensation reaction, the reaction temperature is preferably 0 to 100 ° C, more preferably 15 to 80 ° C. The weight average molecular weight of the hydrolysis-condensation product obtained at this time is 500 or more compared with the molecular weight of polystyrene conversion, and when applied to an insulating film, it is preferable that it is 500-1,000,000.

In order to reduce the density of an insulating film, you may add a fixed amount of organic molecules, an organic polymer, and a dendrimer to the coating composition for insulating film formation obtained by this invention. The type of the organic material is not particularly limited, and may be used as a material capable of thermal decomposition at 200 to 450 ° C. and then used in addition to the composition for forming an insulating film after the organosilicate polymer is prepared or may be added to the organosilicate polymer.

You may add a fixed amount of components, such as a pH adjuster, colloidal silica, surfactant, etc. to the composition for insulating film formation obtained by this invention according to the objective.

The concentration of the total solids of the composition of the present invention is 2 to 60% by weight, preferably 5 to 40% by weight is suitable in consideration of the film thickness and the integrity of the insulating film. The solid content concentration can be adjusted by the type and the amount of the organic solvent.

An insulating film forming composition of the present invention is formed by coating a silicon wafer, SiO ₂ wafer, SiN wafer, a compound semiconductor substrate such as. As the method for forming the insulating film, a spin coating method, an immersion method, a roll coating method, a spray method, or the like can be used, and it is possible to form a film having a predetermined thickness using these methods. In particular, when manufacturing a multilayer circuit interlayer insulating film of a semiconductor device, it is preferable to use a spin coat method.

The thickness of the film can be adjusted by changing the viscosity of the composition and the rotational speed of the spin coater. In general, when the film is used as an interlayer insulating film of a multilayer circuit structure of a semiconductor device, it is appropriate that it is 0.1 to 2 m.

After coating, the organic silicate polymer insulating film having a three-dimensional structure may be formed through a drying process and a baking (curing) process. The drying process usually means including a pre-bake process and a soft-bake process. The organic solvent used during the prebaking process is gradually evaporated, a certain amount of the functional group is crosslinked during the softbaking process, and the remaining functional groups are finally reacted during the firing process. The drying is preferably carried out at a temperature of 30 to 350 ℃, firing at a temperature of 350 ℃ or more, in particular the firing temperature is preferably carried out at a temperature of 350 to 500 ℃. If the calcination temperature is less than 350 ° C., the polycondensation of the glass silicate polymer does not occur completely, and thus the strength of the film is lowered and the dielectric properties may be lowered due to the presence of residual functional groups. The upper limit of the firing temperature depends on the thermal stability of the organosilicate insulating film of the present invention and the semiconductor device fabricated using the same.

The said drying process and a baking process can be performed continuously, heating up at a constant speed, and can also be performed intermittently. If carried out intermittently, it is appropriate to carry out the drying and firing processes for 1 minute to 5 hours, respectively. In this case, the heating method may be a hot plate, an oven, a furnace, or the like, and the heating atmosphere may be an inert gas atmosphere such as nitrogen, argon or helium, an oxygen atmosphere such as an oxygen-containing gas (for example, air, etc.), a vacuum state, or It can be performed under a gas atmosphere containing ammonia and hydrogen. The heating method may be performed by the same heating method as the drying step and the firing step, or may be performed by different methods, respectively.

After the drying process and the firing process, the surface treatment may be performed to minimize the amount of hydroxyl groups in the insulating film, if necessary. The surface treatment method can be surface-treated by using generally known silylated compounds, such as hexamethyldisilazane, alkylalkoxysilane, or alkylacetoxysilane, or baking in a reducing atmosphere such as hydrogen or a fluorine-containing gas. The silylation treatment method of the insulating film can be immersed or spin-coated in the silylated compound or the silylated compound diluted in a solvent, or can be performed in the vapor atmosphere of the silylated compound. It is preferable to heat.

The film thus obtained has excellent insulation properties, excellent uniformity of the coating film, crack resistance of the coating film, and excellent surface strength of the coating film. Therefore, the interlayer for semiconductor devices such as LSI, system LSI, DRAM, SDRAM, RDRAM, D-RDRAM, etc. Insulating film, semiconductor device interlayer capping layer, hard mask layer, and etch stop layer, protective film such as surface coating film of semiconductor device, interlayer insulating film of multilayer wiring substrate, liquid crystal display device It is suitable for use in applications such as a protective film for insulation and an insulation prevention film.

Hereinafter, preferred examples are provided to help understanding of the present invention, but the following examples are merely to illustrate the present invention, and the scope of the present invention is not limited to the following examples.

EXAMPLE

Example 1

(Organic silicate polymer production)

4.7 g of tetramethyltetramethoxycyclotetrasiloxane was added to 9 g of tetrahydrofuran solution, and 1.8 g of distilled water in which 55 mg of hydrogen chloride was dissolved was added and reacted overnight at 60 ° C. After completion of the reaction, the reaction solution was diluted with ether and washed with distilled water until the pH was neutral. After the water of the obtained organic layer was removed using a drying agent, the organic solvent was removed in vacuo to obtain a powdery product.

(Manufacture of insulating film)

The solution obtained by dissolving the obtained organosilicate polymer in propylene glycol monomethyl ether acetate was spin coated on a silicon wafer to obtain a thin film, and cured at a temperature of 425 ° C. for 1 hour under a nitrogen atmosphere to prepare an insulating film.

Example 2

(Organic silicate polymer production)

To 9 g of tetrahydrofuran solution, 3.65 g of tetramethyltetramethoxycyclotetrasiloxane and 1.54 g of tetramethoxysilane were added, and 2.91 g of distilled water in which 2.65 mg of malonic acid was dissolved was added. overnight). After completion of the reaction, the reaction solution was diluted with ether and washed with distilled water until the pH was neutral. After the water of the obtained organic layer was removed using a drying agent, the organic solvent was removed in vacuo to obtain a powdery product.

(Manufacture of insulating film)

An insulating film was prepared in the same manner as in Example 1.

Comparative Example 1

(Organic silicate polymer production)

6.9 g of methyltrimethoxysilane was added to 9 g of tetrahydrofuran solution, 5.5 g of distilled water in which 55 mg of hydrogen chloride was dissolved were added, and it reacted overnight at 60 degreeC. After completion of the reaction, the reaction solution was diluted with ether and washed with distilled water until the pH was neutral. After the water of the obtained organic layer was removed using a drying agent, the organic solvent was removed in vacuo to obtain a powdery product.

(Manufacture of insulating film)

An insulating film was prepared in the same manner as in Example 1.

Comparative Example 2

(Organic silicate polymer production)

To 9 g of tetrahydrofuran solution, 5.5 g of methyltrimethoxysilane and 1.54 g of tetramethoxysilane were added, and 5.8 g of distilled water in which 2.63 mg of malonic acid was dissolved was added, followed by an overnight reaction at 60 ° C. I was. After completion of the reaction, the reaction solution was diluted with ether and washed with distilled water until the pH was neutral. After the water of the obtained organic layer was removed using a drying agent, the organic solvent was removed in vacuo to obtain a powdery product.

(Manufacture of insulating film)

An insulating film was prepared in the same manner as in Example 1.

Experimental Example

Dielectric properties and mechanical properties of the insulating film prepared in Examples 1 or 2 and Comparative Examples 1 or 2 were measured by the following method, and the results are shown in Table 1 below.

A) dielectric properties-dielectric constant by MIS (Metal / Insulator / Semiconductor) method

    Was measured.

B) Mechanical properties-TriboIndenter of Hysitron Inc.

    The elastic modulus and strength were measured using.

division Example 1 Example 2 Comparative Example 1 Comparative Example 2 Dielectric constant 2.73 2.81 2.74 2.80 Mechanical properties E = 4.6 Gpa E = 7.5 Gpa E = 3.6 Gpa E = 6.7 Gpa

Through Table 1, it was confirmed that the insulating film of Example 1 or 2 prepared according to the present invention has excellent low dielectric properties and mechanical properties as well as the insulating film of Comparative Example 1 or 2.

As described above, the organosilicate polymer prepared according to the present invention can be used as a low dielectric wiring interlayer insulating film that can reduce the speed and power consumption of semiconductor devices and significantly reduce the mutual interference of metal wires. In addition, the film applied to the insulating film is excellent in insulating properties, the uniformity of the coating film, dielectric properties, mechanical properties of the coating film is excellent in all.

Claims (9)

a) in an organic solvent b) i) at least one cyclic siloxane compound represented by the following formula (1), or    ii) the cyclic siloxane compound, and a silane compound represented by the following formula (2) or (3), or an oligomer thereof After mixing, the method of producing an organosilicate polymer comprising the step of hydrolysis and condensation by adding water and a catalyst: [Formula 1] In the formula of Formula 1, Each R ¹ is independently hydrogen, fluorine, aryl, vinyl, allyl, or unsubstituted or substituted fluorine, straight or branched alkyl having 1 to 4 carbon atoms, R ² is hydrogen linear or branched alkyl of 1 to 4 carbon atoms, k, and l are each an integer of 3 to 10, [Formula 2] In the formula (2), Each R ³ is independently straight or branched alkyl having 1 to 4 carbon atoms, optionally substituted with hydrogen, aryl, vinyl, allyl, or fluorine, Each R ⁴ is independently acetoxy, hydroxy, or straight or branched alkoxy having 1 to 4 carbon atoms, p is an integer from 0 to 2, [Formula 3] In the formula (3), R ⁵ , and R ⁷ are each independently straight or branched chain alkyl having 1 to 4 carbon atoms, unsubstituted or substituted with hydrogen, aryl, vinyl, allyl, or fluorine, R ⁶ and R ⁸ are each independently acetoxy, hydroxy, or straight or branched alkoxy having 1 to 4 carbon atoms, M is alkylene or phenylene having 1 to 6 carbon atoms, q and r are each an integer of 0-2. delete delete i) one or more cyclic siloxane compounds represented by the following formula (1) alone, or ii) an organosilicate polymer polymerized from the cyclic siloxane compound, and a silane compound represented by the following formula (2) or (3), or an oligomer thereof: [Formula 1] In the formula of Formula 1, Each R ¹ is independently hydrogen, fluorine, aryl, vinyl, allyl, or unsubstituted or substituted fluorine, straight or branched alkyl having 1 to 4 carbon atoms, R ² is hydrogen linear or branched alkyl of 1 to 4 carbon atoms, k, and l are each an integer of 3 to 10, [Formula 2] In the formula (2), Each R ³ is independently straight or branched alkyl having 1 to 4 carbon atoms, optionally substituted with hydrogen, aryl, vinyl, allyl, or fluorine, Each R ⁴ is independently acetoxy, hydroxy, or straight or branched alkoxy having 1 to 4 carbon atoms, p is an integer from 0 to 2, [Formula 3] In the formula (3), R ⁵ , and R ⁷ are each independently straight or branched chain alkyl having 1 to 4 carbon atoms, unsubstituted or substituted with hydrogen, aryl, vinyl, allyl, or fluorine, R ⁶ and R ⁸ are each independently acetoxy, hydroxy, or straight or branched alkoxy having 1 to 4 carbon atoms, M is alkylene or phenylene having 1 to 6 carbon atoms, q and r are each an integer of 0-2. a) the organosilicate polymer of claim 4; And b) organic solvent Composition for forming an insulating film comprising: The method of claim 5, c) at least one additive selected from the group consisting of organic molecules, organic polymers, organic dendrimers, pH adjusting agents, colloidal silica, and surfactants Composition for forming an insulating film further comprising. delete An insulating film comprising the organosilicate polymer of claim 4. delete