KR100500446B1 - Semiconductor manufacturing equipment having heater block leveling unit - Google Patents

Abstract

Provide semiconductor manufacturing equipment. The semiconductor manufacturing equipment includes a process chamber having a closed space for a predetermined process, a shower head for supplying reaction gas into the process chamber, a bottom plate installed at the bottom of the process chamber, and an upper side of the bottom plate. The heater block is installed on the heater block to heat the wafer to a predetermined temperature, the spindle fork is installed on the upper surface of the heater block to seat the wafer, and is interposed between the bottom plate and the heater block to rotate the wafer by a predetermined angle according to the process step. At least three or more support members that insulate the block and the bottom plate and support the heater block, and a heater block leveling unit installed below the support member to adjust the level of the heater block.

Description

Semiconductor manufacturing equipment having heater block leveling unit

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing facility. More specifically, the present invention relates to a heater block for adjusting a level of a heater block, which is a device for heating a wafer in a process chamber. It relates to a semiconductor manufacturing equipment equipped with a leveling unit (Unit).

In general, the production of a single semiconductor product requires a number of semiconductor processes and a plurality of semiconductor facilities that go through these numerous semiconductor processes.

Since the plurality of semiconductor devices perform different semiconductor processes for each device, in order to perform each semiconductor process smoothly, various conditions for the process such as reaction gas, reaction temperature, and reaction pressure are performed according to each semiconductor process. It must be satisfied.

For example, in the case of a semiconductor manufacturing facility which supplies a predetermined reaction gas into the process chamber and supplies power of a predetermined frequency to the upper side and the lower side of the process chamber to generate plasma in the chamber to perform a predetermined semiconductor process. The short-circuit prevention condition to prevent the power supplied to the upper side and the lower side from being mutually shorted, and the horizontal maintenance condition of the heater block for heating the wafer must be satisfied.

Hereinafter, a conventional plasma thin film deposition facility will be described in detail as an example of a conventional semiconductor manufacturing facility that generates a plasma to perform a predetermined semiconductor process.

That is, the conventional plasma thin film deposition equipment is provided with a process chamber sealed from the outside and maintained at a predetermined vacuum pressure.

Here, a shower head for supplying a premixed predetermined reaction gas (Gas) is installed above the process chamber, and a heater for heating the wafer to a predetermined temperature when the wafer is seated below the process chamber. The bottom plate supporting the block and the heater block is installed.

In addition, HF RF (High Frequency Radio Frequency), which is an energy source, is applied to the showerhead to dissociate the reaction gas, and the heater block generates a weak DC current (Direct Current Bios) in the heater block, thereby providing a wafer. During thin film deposition, a low frequency radio frequency (LF RF) is applied to allow some ions in the process chamber to be injected into the thin film.

At this time, a plurality of wafers are seated in the heater block of the conventional plasma thin film deposition equipment, and the heater blocks on which the plurality of wafers are seated must be maintained at a level so that the plurality of wafers can all be uniformly processed. . Since the LF RF is applied to the heater block, the heater block must be electrically insulated from the showerhead positioned above the process chamber and to which the HF RF is applied.

Accordingly, the conventional plasma thin film deposition apparatus is provided with three support members in the form of a ball to adjust the level of the heater block while maintaining the insulation between the shower head and the heater block.

That is, the support member of the conventional plasma thin film deposition equipment in the form of a ball is located between the heater block and the bottom plate in the process chamber to support the heater block, but mutually with respect to the center of the heater block so that the heater block can maintain approximately the level. It is positioned to be spaced apart at 120 ° intervals, and is made of ceramic material so that the shower head and the heater block can be insulated from each other.

And, the lower side of any one of the three supporting members are formed in the groove to the predetermined depth is excavated with a gentle slope, the adjustment groove is a ball-shaped support member to adjust the level of the heater block It helps to make it possible.

Specifically, in the case of the conventional plasma thin film deposition equipment, the heater block is often disassembled and then reassembled for PM (Preventive Maintenance) work or cleaning work of the facility, and then the worker assembles the heater block and the level of the heater block. Will be adjusted.

That is, the operator lifts the heater block upward for a predetermined time to adjust the level of the heater block, and places two support members of the respective support members spaced at 120 ° intervals to their original positions. The member adjusts the level of the heater block by lowering the heater block again while being positioned at one side of the adjustment groove to be horizontal to the heater block. Thereafter, when the level of the heater block is not correct in this way, the operator continuously adjusts the level of the heater block by repeating the above operation.

On the other hand, if the level of the heater block is not correctly adjusted horizontally even after repeating the above operation, the operator can adjust the level of the heater block by inserting a support piece such as a separate aluminum material under the lower surface of the support member. do.

However, such a conventional semiconductor manufacturing equipment has a problem that the operation alone is impossible because the level of the heating block must be performed by lifting the heater block upward.

In addition, such a conventional semiconductor manufacturing equipment has a problem that it takes a long time to work because it has to repeatedly carry out the work to lift the heater block and the moving of the support member from the adjusting groove when the level of the heater block is not matched. Is generated.

In addition, such a conventional semiconductor manufacturing equipment uses a metal foreign material such as a support piece in order to adjust the level of the heater block, but is used in the process chamber where very precise work is performed. There is a problem that affects.

In addition, such a conventional semiconductor manufacturing facility adjusts the level of the heater block by inserting only the support piece under the lower surface of the support member. In the process, the support member, which is often formed in the form of a ball, is fixed to the support piece. The problem occurs that slips at a certain distance.

Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus equipped with a heater block leveling unit that enables the operator to easily and accurately adjust the level of the heater block.

The semiconductor manufacturing apparatus of the present invention for realizing the above object includes a process chamber having a closed space for a predetermined process, a shower head for supplying a reaction gas into the process chamber, and a bottom installed at the bottom of the process chamber. A plate, a heater block installed above the bottom plate and heating the wafer to a predetermined temperature, and a spindle fork installed on the upper surface of the heater block to seat the wafer, and rotating the wafer by a predetermined angle according to the process step. And at least three support members interposed between the bottom plate and the heater block to insulate the heater block and the bottom plate and support the heater block, and a heater block leveling device installed below the support member to adjust the level of the heater block. Including the unit.

In this case, the support member is composed of a first support member, a second support member, a third support member, and the heater block leveling unit is preferably installed below any one of the first, second, and third support members. Do.

In addition, it is preferable that a mounting hole is formed in the bottom plate so that the heater block leveling unit penetrates the bottom plate and is installed to protrude downwardly to the lower side of the process chamber.

In addition, the heater block leveling unit is a support plate for holding and supporting the support member (Holding) and one end is coupled to the support plate and the other end is projected downward through the mounting hole to the lower side of the process chamber to move the support plate up and down Load adjusting pipe (Rod), rod coupling pipe which is screwed with the upper and lower adjusting rod and serves as a support for the upper and lower adjusting rod to move the support plate, and prevents the rod coupling tube from flowing up and down with the upper and lower adjusting rod It is preferable to include a hollow first and second bolt (Bolt) body to wrap the rod coupling pipe up and down.

Meanwhile, a first catching jaw is formed on the outer circumferential surface of the rod coupling pipe, and a second catching jaw is formed inside the first bolt body to block the rod coupling pipe from moving upward, and the second bolt body is formed. Inside of the third engaging jaw may be formed to block the rod coupling pipe from moving downward.

In addition, a gap between the first bolt body and the rod coupling pipe is filled between the first bolt body and the rod coupling pipe to prevent the rod coupling pipe from flowing between the first bolt body and the second bolt body. The flow preventing tube (Tube) can be interposed.

In addition, a pair of fixing protrusions may be formed inside the mounting hole to fix the first bolt body or the second bolt body to prevent the heater block leveling unit from being separated from the lower side of the mounting hole.

Hereinafter, an embodiment of a semiconductor manufacturing apparatus equipped with a heater block leveling unit according to the present invention will be described in detail.

The semiconductor manufacturing apparatus according to the present invention is a process chamber including a wafer loading part in which a wafer which has been largely subjected to a preliminary process is loaded, and a predetermined space closed so that a predetermined process such as thin film deposition is performed on the loaded wafer. And a load lock chamber via which the wafer loaded in the wafer loading unit is transferred to the process chamber, and a wafer unloaded, in which the wafer which has been subjected to a predetermined process such as thin film deposition in the process chamber is unloaded. It comprises a loading unit, and a central control unit for controlling the overall semiconductor manufacturing equipment.

More specifically, the wafer loading unit is provided with a wafer cassette for sequentially stacking and aligning wafers to be processed, and the wafer unloading unit is sequentially stacking wafers having a predetermined process such as thin film deposition. And an aligned wafer cassette.

In addition, a wafer transfer robot is installed in the load lock chamber to transfer the wafer located in the wafer loading part to the process chamber or the wafer located in the process chamber to the wafer unloading part as the process proceeds.

Meanwhile, the process chamber is a core part of the present invention. Hereinafter, the process chamber will be described in detail with reference to FIGS. 1 to 5.

The process chamber 130, which is an embodiment of the semiconductor fabrication apparatus 100 of the present invention, is a portion that advances a predetermined process such as thin film deposition on the wafer 90, and a predetermined environment must be implemented so that a predetermined reaction can occur. . The process chamber 130 has a power supply (not shown) for applying power, a gas supply device 133 for supplying the reaction gas, and a vacuum for maintaining and changing the pressure of the process chamber 130 at an appropriate pressure. An exhaust device (not shown) is connected.

In the process chamber 130, a heater block 132 for heating the wafer 90 to a predetermined temperature required for the process and a heater block 132 are supported and installed on the bottom surface of the process chamber 130. Interposed between the bottom plate 136, the heater block 132, and the bottom plate 136, which horizontally supports the heater block 132 and insulates the heater block 132 from the bottom plate 136. The support member 140, the heater block leveling unit 141 is installed on the lower side of the support member 140 and adjusts the level so that the heater block 132 is horizontal, and is installed on the upper surface of the heater block 132 When the wafer 90 is seated by a wafer transfer robot (not shown), the seated wafer 90 is rotated by a predetermined angle according to the process step, and the spindle fork 134 and the upper side in the process chamber 130. Installed on the wafer 90 seated on the spindle fork 134 The showerhead 165, which evenly supplies a reaction gas supplied from the supply device 133 is provided.

Here, the shower head 165 is applied with HF RF which is an energy source to dissociate the reaction gas from the power supply, and the heater block 132 generates a weak DC bios in the heater block 132. LF RF is applied from the power supply to allow some ions in the process chamber 130 to be injected into the thin film during a process such as thin film deposition on the wafer 90.

In this case, a plurality of wafers 90 are seated on the heater blocks 132 of the semiconductor manufacturing apparatus 100 of the present invention, and thus, a plurality of heater blocks 132 on which the plurality of wafers 90 are seated. The levels must be maintained so that the wafers 90 of the wafers 90 can all be uniformly processed. In addition, since the LF RF is applied to the heater block 132, the heater block 132 must be electrically insulated from the showerhead 165 positioned above the process chamber 130 and to which the HF RF is applied.

In the present invention, the support member 140 interposed between the heater block 132 and the bottom plate 136 to support the heater block 132 horizontally and to insulate the heater block 132 from the bottom plate 136. And a heater block leveling unit 141 installed at the lower side of the support member 140 and adjusting the level so that the heater block 132 is horizontal, the support member will be described below. A detailed description of the 140 and the heater block leveling unit 141 is as follows.

First, the support member 140 will be described in detail. The support member 140 according to the present invention maintains the insulation between the shower head 165 and the heater block 132 as shown in FIG. 1. Three ball shapes that can support 132 horizontally, namely, the first support member 137, the second support member 138, and the third support member 139, are formed of an insulating material ceramic or the like. . At this time, the support member 140 of the present invention is implemented in three ball shape to serve to support the heater block 132 horizontally, each ball is spaced a predetermined distance from the center of the heater block 132. They are located on the same circumference and are arranged in a radial form, spaced apart from each other by 120 °.

On the other hand, the heater block leveling unit 141 is mounted on the lower surface of any one of the support member 140 implemented in the three ball shape to adjust the level of the heater block 132, the bottom The plate 136 is inserted into and installed in the mounting hole 142 formed through the top and bottom.

At this time, the heater block leveling unit 141 is fitted to protrude a predetermined length in the lower direction of the mounting hole 142 formed in the bottom plate 136 is installed so that the operator can adjust the level alone through this protruding portion. In addition, a pair of fixing protrusions 143 protruding to a predetermined length are formed in the mounting holes 142 formed in the bottom plate 136, and the fixing protrusions 143 are heater block leveling units fitted into the mounting holes 142. It serves to prevent the 141 is separated from the downward direction, that is, to fix the first bolt body or the second bolt body of the heater block leveling unit 141 to be described later.

Hereinafter, the heater block leveling unit 141 which is an embodiment of the present invention will be described in detail.

As shown in the drawing, the heater block leveling unit 141 according to the present invention has a support plate 144 for holding and supporting one support member 140 having a large ball shape, and a support plate coupled to a lower side of the support plate 144. Up and down adjustment rod 147 to move the 144 up and down, and the rod coupling pipe screwed with the up and down adjustment rod 147 and the support rod so that the up and down adjustment rod 147 can move the support plate 144 150 and the first and second bolt bodies 153 and 155 which wrap the rod coupling pipe 150 up and down so that the rod coupling pipe 150 does not move up and down with the up and down adjustment rod 147, and up and down adjustment. A flow preventing tube 157 interposed between the first and second bolt bodies 153 and 155 to prevent the up and down flow of the rod coupling pipe 150 and the upper end of the up and down adjustment rod 147. It is fitted in the vicinity of the upper and lower adjustment rod 147 to prevent the separation from the support plate 144 It comprises a nut (159).

More specifically, the support plate 144 is formed to be movable by being fitted into the mounting hole 142 formed in the bottom plate 136 in a flat plate type having a predetermined thickness. For example, when the mounting hole 142 formed in the bottom plate 136 is a rectangular type, the support plate 144 is formed in the shape of a rectangular box (Box), etc., which is inserted into the rectangular hole and is movable. At this time, a fixing groove 145 is formed on the upper surface of the supporting plate 144 so that the one supporting member 140 of the ball shape can be held, and the upper and lower adjustment rods 147 may be coupled to the bottom of the supporting plate 144. Coupling grooves 146 having predetermined spirals are formed on the inner circumferential surface thereof.

On the other hand, the upper and lower adjustment rod 147 is coupled to the coupling groove 146 of the support plate 144 and has a predetermined length so as to protrude a predetermined length in the downward direction through the mounting hole 142 of the bottom plate 136 In the type, the upper portion coupled to the support plate 144 is formed in a cylindrical shape formed with a spiral 148 on the outer circumferential surface, the lower portion 149 protruding downward is to be a spanner or wrench (Wrench), etc. It is formed in the shape of a square column such as a hexagonal column or a square column.

The rod coupling tube 150 is a tube type having a spiral 151 formed therein so that the rod coupling tube 150 may be screwed with the vertical adjustment rod 147, and a third of the second bolt body 155 to be described later on the outer circumferential surface near the center. A first catching jaw 152 protruding a predetermined height to the outside to be caught by the catching jaw 156 is formed, and is interposed between the first bolt body 153 and the second bolt body 155 as described above.

In addition, the first and second bolts 153 and 155 are formed in a hollow so that the rod coupling pipe 150 can be inserted therein, and the spirals 160 and 161 are formed on the outer circumferential surface thereof so as to be screwed together. The two bolt body 155 is coupled to the lower side of the first bolt body 153. In this case, when the first and second bolt bodies 153 and 155 are coupled to each other, a space having a predetermined size is provided between the first bolt body 153 and the second bolt body 155. 150 is to be interposed in this space. Here, the first bolt body 153 and the second bolt body 155 serves to prevent the rod coupling pipe 150 from moving up and down with the vertical adjustment rod 147, the first bolt body A second catching jaw 154 is formed on the inner side of the 153 to prevent the rod coupling pipe 150 from moving upward, and the rod coupling pipe 150 is lower on the inner side of the second bolt body 155. The third locking jaw 156 is formed so as not to be moved.

Meanwhile, in addition to the rod coupling pipe 150, a flow preventing tube 157 is interposed between the first bolt body 153 and the second bolt body 155, and the flow preventing tube 157 has a first bolt body. Interposed between the 153 and the rod coupling pipe 150 to fill the gap between the second catching jaw 154 of the first bolt body 153 and the upper end of the rod coupling pipe 150 so as not to generate a gap. State plays a role. Thus, the rod coupling tube 150 is prevented up and down flow by a predetermined distance between the first bolt body 153 and the second bolt body 155 by the flow preventing tube 157. In addition, the flow preventing tube 157 serves to seal a portion of the internal pressure of the process chamber 130. As such, the flow preventing tube 157 has a predetermined portion of the internal pressure of the process chamber 130. In the case of sealing, an O-ring (not shown) for pressure sealing is further inserted into the upper end of the flow preventing tube 157 which is in contact with the second catching jaw 154 of the first bolt body 153.

 Finally, a nut 159 of a predetermined size is coupled to an end portion of the top and bottom adjustment rod 147, that is, a portion close to the top end portion of the top and bottom adjustment rod 147 penetrating the first and second bolt bodies 153 and 155. As described above, the nut 159 serves to prevent the vertical adjustment rod 147 from being separated from the support plate 144. For example, the up and down adjustment of the support member 140 is eventually performed by the up and down adjustment rod 147 coupled to the lower side of the support plate 144 to move the support plate 144 up and down, In order to continuously move the support member 140 downward, the operator continues to rotate the lower portion of the up and down adjustment rod 147 in one direction to move the support member 140 to the lower side, at this time, the present invention nut ( If the 159 is not coupled to the adjacent portion of the upper end of the upper and lower adjustment rod 147, the upper and lower adjustment rod 147 is to be separated from the support plate 144 while continuing to move downward. The nut 159 of the present invention serves to block the separation of the up and down adjustment rod 147 in advance.

Hereinafter, the operation and effects of the semiconductor manufacturing equipment 100 provided with the heater block leveling unit 141 of the present invention configured as described above will be described in detail.

First, when the wafer 90 having undergone the preceding process is transferred to a wafer loading unit (not shown) of the semiconductor manufacturing equipment 100 according to the present invention by a wafer transfer device (not shown) or a user, a load lock chamber (not shown) The wafer transfer robot (not shown) loads the wafer 90 transferred to the wafer loading unit into the spindle fork 134 located above the heater block 132 in the process chamber 130.

In this case, the power supply device, the gas supply device 133 and the vacuum exhaust device implement a predetermined environment to allow the process to proceed in the process chamber 130. That is, the power supply device supplies HF RF and LF RF to the shower head 165 and the heater block 132, respectively, and the gas supply device supplies reaction gas onto the wafer 90 through the shower head 165. The vacuum exhaust device changes the pressure of the process chamber 130 to an appropriate pressure suitable for process progress.

Thus, a predetermined process such as thin film deposition is performed on the wafer 90 loaded on the spindle fork 134, and the spindle fork 134 rotates the wafer 90 little by one direction as the process progresses.

Thereafter, when a process such as thin film deposition is completed on the wafer 90 and the predetermined angle rotation of the spindle fork 134 is completed, the wafer transfer robot of the load lock chamber is connected to the spindle fork 134 of the process chamber 130. The unloaded wafer 90 is unloaded into a wafer unloader portion (not shown), and the predetermined process is completed.

Here, certain parts of the semiconductor manufacturing equipment 100 configured as described above are often decomposed for the PM work or the cleaning work of the equipment 100, and in particular, in the case of the process chamber 130, a very clean environment should be implemented. On a regular basis, PM and cleaning operations are carried out.

Therefore, the user separates all of the shower head 165 and the heater block 132 and the heater block leveling unit 141 installed in the process chamber 130, and then proceeds with the PM work and the washing operation. It is very important for the user to install the level of the heater block 132 exactly horizontally after the PM work and the cleaning work.

Therefore, the user sequentially moves the heater block leveling unit 141, the support member 140, the heater block 132, the shower head 165, etc., on the upper side of the bottom plate 136 of the process chamber 130. After installation, the level of the heater block 132 is adjusted by adjusting the heater block leveling unit 141.

That is, the user rotates the lower portion of the up and down adjustment rod 147 in one side or the other direction by using a spanner or a wrench. In this case, the user rotates the up and down adjustment rod 147 in one side or the other side. Support plate 144 coupled to the upper and lower adjustment rod 147 and the support member 140, such as the ball holding on the support plate 144 is to be moved to the upper side or lower side, the operator can easily heater block alone ( 132 can be adjusted.

As described above, since the heater block leveling unit 141 is provided in the semiconductor manufacturing apparatus 100 according to the present invention to adjust the level of the heater block 132 installed in the process chamber 130, the operator may use a wrench or a wrench. It is possible to adjust the level of the heater block 132 very easily using such as.

In addition, since the semiconductor manufacturing facility 100 according to the present invention can adjust the level of the heater block 132 by simply using a wrench or a wrench, the worker can complete the level adjustment work in a very quick time as well as the conventional metal foreign material. All problems caused by using can be prevented in advance.

As described above, in the semiconductor manufacturing equipment according to the present invention, since the heater block leveling unit is provided to adjust the level of the heater block installed in the process chamber, the operator can easily install the heater block using a spanner or a wrench. It has the effect of being able to adjust the level.

In addition, the semiconductor manufacturing equipment according to the present invention can adjust the level of the heater block simply by a spanner or a wrench, so that the operator can complete the level adjustment work in a very short time as well as by using a conventional metal foreign material. All of these problems can be prevented beforehand.

1 is a schematic view showing a process chamber of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a portion II of FIG. 1. FIG.

Figure 3 is a perspective view showing one embodiment of a heater block leveling unit used in the semiconductor manufacturing equipment of the present invention.

Figure 4 is an exploded perspective view showing the heater block leveling unit shown in FIG.

FIG. 5 is a cross-sectional view illustrating a II-II part of FIG. 3. FIG.

**** Explanation of symbols for the main parts of the drawing ****

130: process chamber 132: heater block

133: gas supply device 134: spindle fork

136: bottom plate 140: support member

144: support plate 147: vertical adjustment rod

150: rod coupling tube 157: flow preventing tube

158: washer 159: nut

Claims (7)

A process chamber having an enclosed space for a predetermined process to proceed; A shower head supplying a reaction gas into the process chamber; A bottom plate installed on a bottom surface of the process chamber; A heater block installed on the bottom plate and heating the wafer to a predetermined temperature; A spindle fork installed on an upper surface of the heater block to seat the wafer, and rotating the wafer by a predetermined angle according to a process step; At least three support members interposed between the bottom plate and the heater block to insulate the heater block and the bottom plate and support the heater block; And a heater block leveling unit installed below the support member and adjusting the level of the heater block. 2. The support member according to claim 1, wherein the support member comprises a first support member, a second support member, and a third support member, and the heater block leveling unit has a lower side of any one of the first, second, and third support members. Semiconductor manufacturing equipment, characterized in that installed in. The semiconductor manufacturing apparatus according to claim 2, wherein the bottom plate is provided with a mounting hole so that the heater block leveling unit may be installed to protrude downwardly through the bottom plate. The method of claim 3, wherein the heater block leveling unit is a support plate for holding and supporting the support member, one end is coupled to the support plate and the other end is projected downward through the mounting hole to the lower side of the An up and down adjustment rod for moving the support plate up and down, a rod coupling pipe screwed with the up and down adjustment rod and serving as a support to allow the support plate to move the support plate up and down, and the rod coupling pipe being the up and down adjustment rod. And a hollow first and second bolt body which prevents the up and down flow and surrounds the rod coupling pipe up and down. The method of claim 4, wherein a first catching jaw is formed on the outer circumferential surface of the rod coupling pipe, and a second catching jaw is formed inside the first bolt body to block the rod coupling pipe from moving upward. And a third catching jaw formed inside the second bolt body to block the rod coupling pipe from moving downward. According to claim 5, Between the first bolt body and the rod coupling pipe, the gap between the first bolt body and the rod coupling pipe to fill the rod coupling pipe is the first bolt body and the second bolt body Semiconductor manufacturing equipment, characterized in that the flow prevention tube is interposed to prevent the flow between. The method of claim 4, wherein the mounting hole has a pair of fixing projections to fix the first bolt body or the second bolt body to prevent the heater block leveling unit is separated from the lower side of the mounting hole. Semiconductor manufacturing equipment.