KR100497644B1 - Soft piezoelectric ceramic composition and piezoelectric devices using the same - Google Patents
Soft piezoelectric ceramic composition and piezoelectric devices using the same Download PDFInfo
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- KR100497644B1 KR100497644B1 KR10-2002-0069973A KR20020069973A KR100497644B1 KR 100497644 B1 KR100497644 B1 KR 100497644B1 KR 20020069973 A KR20020069973 A KR 20020069973A KR 100497644 B1 KR100497644 B1 KR 100497644B1
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- 239000000919 ceramic Substances 0.000 title claims abstract description 69
- 239000000203 mixture Substances 0.000 title claims abstract description 39
- 238000005245 sintering Methods 0.000 claims abstract description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052709 silver Inorganic materials 0.000 claims abstract description 29
- 239000004332 silver Substances 0.000 claims abstract description 29
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 10
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 14
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 13
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims description 11
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000008878 coupling Effects 0.000 abstract description 15
- 238000010168 coupling process Methods 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 26
- 239000010944 silver (metal) Substances 0.000 description 20
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 5
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000000280 densification Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 210000002837 heart atrium Anatomy 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 235000019198 oils Nutrition 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010934 sterling silver Substances 0.000 description 2
- 229910000898 sterling silver Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000021323 fish oil Nutrition 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
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- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
본 발명은 연성(soft)계 압전 세라믹 조성물 및 이를 이용한 압전 세라믹 장치에 관한 것으로서, 더욱 상세하게는 [(Pb1-m-nSrmBan)(1-y)Bi y][(ZrxTi1-x)1-a-bNiaWb]O3 (여기서, m,n,x,y,a 및 b는 몰비로서 0.00≤m ≤0.18이고, 0.00≤n ≤0.18이고, 0.00 ≤ (m+n) ≤0.21이고, 0.40 ≤ x ≤ 0.60이고, 0.000 < y ≤ 0.04이고, 0.00 ≤ a ≤0.02이고, 0.00 < b ≤ 0.02이다.) 세라믹 및 0.001 내지 2 중량% 이하의 산화카드뮴(CdO)을 포함하는 연성(soft)계 압전 세라믹 조성물 및 이를 이용한 압전 세라믹 장치에 관한 것이다.The present invention relates to a soft piezoelectric ceramic composition and a piezoelectric ceramic device using the same, and more particularly, [(Pb 1-mn Sr m Ba n ) (1-y) Bi y ] [(Zr x Ti 1 -x ) 1-ab Ni a W b ] O 3 , wherein m, n, x, y, a and b are 0.00 ≦ m ≦ 0.18 as molar ratio, 0.00 ≦ n ≦ 0.18, and 0.00 ≦ (m + n ) ≤ 0.21, 0.40 ≤ x ≤ 0.60, 0.000 <y ≤ 0.04, 0.00 ≤ a ≤ 0.02, and 0.00 <b ≤ 0.02. The present invention relates to a soft piezoelectric ceramic composition and a piezoelectric ceramic device using the same.
본 발명의 연성(soft)계 압전 세라믹 조성물은 높은 압전 상수(piezoelectric constant)와 전기기계결합계수(electro-mechanical coupling coefficient)를 가지고 있고, 은(Ag) 전극과 동시소결할 수 있어 은(Ag)-팔라듐(Pd) 내부전극과 비교하여 전극의 비용을 절감할 수 있는 순은 내부전극을 가진 압전 세라믹 장치를 제조할 수 있다.The soft piezoelectric ceramic composition of the present invention has a high piezoelectric constant and an electro-mechanical coupling coefficient, and is capable of co-sintering with silver (Ag) electrodes, thereby providing silver (Ag). It is possible to manufacture a piezoelectric ceramic device having a pure silver internal electrode which can reduce the cost of the electrode compared to the palladium (Pd) internal electrode.
Description
본 발명은 연성(soft)계 압전 세라믹 조성물 및 이을 이용한 압전 세라믹 장치에 관한 것으로서, 더욱 상세하게는 높은 압전 정수(piezoelectric parameter)를 가지고 저하된 온도에서 은(Ag) 전극과 동시소결이 가능한 연성(soft)계 압전 세라믹 조성물 및 이를 이용한 압전 세라믹 장치에 관한 것이다.The present invention relates to a soft piezoelectric ceramic composition and a piezoelectric ceramic device using the same. More particularly, the present invention relates to a soft piezoelectric ceramic composition having a high piezoelectric parameter and capable of co-sintering with silver (Ag) electrodes at a reduced temperature. soft) piezoelectric ceramic composition and a piezoelectric ceramic device using the same.
최근 디젤 엔진의 연료분사시스템의 밸브제어를 위해 압전기 액츄에이터가 성공적으로 적용되어 다층 압전기 액츄에이터의 대규모 상업적인 응용의 길이 열렸다. 또한 이 경우 일반적으로 보다 큰 변위를 얻기 위해 높은 압전 상수(piezoelectric constant)를 가진 연성(soft)계 납 지르코네이트 티타네이트(PZT,lead zirconium titanate) 물질을 압전 액츄에이터에 적용하여 사용한다. 한편 자동차에서 낮은 입력 전압에서 충분한 변위를 얻기 위해 모노리식 다층 구조를 선택한다.Recently, piezoelectric actuators have been successfully applied for valve control of fuel injection systems in diesel engines, opening the way for large-scale commercial applications of multilayer piezoelectric actuators. Also, in this case, it is usually necessary to have a high piezoelectric constant Soft lead zirconium titanate (PZT) materials are applied to piezoelectric actuators. On the other hand, monolithic multilayer structures are chosen to achieve sufficient displacement at low input voltages in automobiles.
그러나 기존의 연성(soft)계 PZT(Pb(Zr Ti)O3) 물질로 다층 압전 액츄에이터 등과 같은 압전 세라믹 장치를 생산할 때, 높은 동시소결 온도때문에 내부전극으로 비싼 은(Ag)-팔라듐(Pd) 또는 백금(Pt) 합금이 보통 사용되었다. 팔라듐(Pd)의 양은, 1150 ~ 1300℃에서 소결될 때, 20 ~ 70 중량% 범위내에서 소결온도에 의존한다. 따라서 다층 압전 액츄에이터에서 내부전극의 비용의 비용을 감소시키기 위해 압전 세라믹의 소결온도를 특히 은(Ag)의 녹는점 아래로 저하시키려는 많은 기술적 노력이 있어왔다.However, in the production of piezoelectric ceramic devices such as multilayer piezoelectric actuators using soft PZT (Pb (Zr Ti) O 3 ) materials, high silver (Ag) -palladium (Pd) is used as an internal electrode due to the high co-sintering temperature. Or platinum (Pt) alloys were commonly used. The amount of palladium (Pd), when sintered at 1150 to 1300 ° C., depends on the sintering temperature within the range of 20 to 70 wt%. Therefore, many technical efforts have been made to lower the sintering temperature of piezoelectric ceramics below the melting point of silver (Ag) in order to reduce the cost of the internal electrode in the multilayer piezoelectric actuator.
연성(soft)계 압전 세라믹 물질은 다음의 전형적인 특징이 있다. Soft piezoelectric ceramic materials have the following typical characteristics.
1) 높은 압전 상수(piezoelectric constant),1) high piezoelectric constant,
2) 높은 전기기계 결합계수(electro-mechanical coupling coefficient, Kp),2) high electro-mechanical coupling coefficient (Kp),
3) 높은 유전상수(dielectric constant),3) high dielectric constant,
4) 높은 유전손실(dielectric loss) 4) high dielectric loss
5) 낮은 기계적품질계수(mechanical quality factor,Qm) 및5) low mechanical quality factor (Qm) and
6) 낮은 항전력(coercive field)과 높은 잔류분극6) Low coercive field and high residual polarization
PZT(Pb(Zr Ti)O3)를 기초로 한 물질에서, 상기 연성(soft)계 압전 세라믹 물질의 특성들은 Zr4+ 또는 Ti4+을 높은 원자가를 갖는 Nb5+, Ta5+, W6+ 등으로 치환하거나, Pb2+ 를 La3+로 치환함으로써 얻을 수 있다. 그러나 기존의 연성(soft)계 PZT 물질은 소결온도가 1150 ~ 1200 ℃이기 때문에(참고문헌 1) H. Zheng et. al., "Effects of Octahedral Tilting on the Piezoelectric Properties of Strontium/Barium/Niobium-doped Soft Lead Zirconate Titanate Ceramics", J. of Am. Ceram Soc. 85[9], 2337(2002), 2) US Patent 5,423,995), 내부전극과 함께 그린 시트를 동시소결시킴으로써 다층 액츄에이터와 같은 압전 세라믹 장치를 만들기 위해 비싼 은(Ag)-팔라듐(Pd) 합금이 사용되어야만 하는 문제점이 있다.In materials based on PZT (Pb (Zr Ti) O 3 ), the properties of the soft piezoelectric ceramic materials have high valence of Zr 4+ or Ti 4+ . It can obtain by substituting by Nb5 + , Ta5 + , W6 + etc., or substituting Pb2 + by La3 + . However, conventional soft PZT materials have a sintering temperature of 1150 to 1200 ° C (Ref. 1). H. Zheng et. al., "Effects of Octahedral Tilting on the Piezoelectric Properties of Strontium / Barium / Niobium-doped Soft Lead Zirconate Titanate Ceramics", J. of Am. Ceram Soc. 85 [9], 2337 (2002), 2) US Patent 5,423, 995), expensive silver (Ag) -palladium (Pd) alloys used to make piezoelectric ceramic devices such as multilayer actuators by co-sintering green sheets with internal electrodes. There is a problem that must be done.
PZT 물질의 소결온도는, 저하된 온도에서 치밀화를 높여주는 액상을 형성하는 삼산화이붕소(B2O3), 오산화바나듐(V2O5), 산화비스무스(Bi 2O3), 산화구리(CuO)와 같은 소결보조제를 첨가함으로써 저하시킬 수 있다. (참고문헌; 1)U.S. Patent 5,423,995, 2)U.S. Patent 5,433,917, 3)U.S. Patent No. 5,792,379, 4) K. Murakami et. al. "Morphotropic Phase Boundary and Microstructure of Low-Temperature sintered PZT ceramics with BiFeO3 and Ba(Cu0.5W0.5)O 3", Proceedings of the Ninth IEEE International Symposium on Applications of Ferroelectrics 5) X. Wang et.al., "The Mechanism of Low Temperature Sintering PZT Ceramics with additives of Li2O3-Bi2O3-CdO", Proceedings of Eighth IEEE International Symposium on Applications of Ferroelectrics.) 그러나 이러한 소결보조제는 종종 소결된 세라믹에 유리상을 남겨서, 유전손실 계수(dielectric loss tangent)를 증가시키고 압전 정수(piezoelectric parameter)를 악화시키는 문제점이 있다. 또한 소결동안 형성되는 이러한 액상은 은(Ag) 또는 은(Ag)-팔라듐(Pd) 전극과 쉽게 반응하고, 다층 압전 소자를 동시소결하는 것을 어렵게 하는 문제점이 있다.The sintering temperature of PZT material is diboride (B 2 O 3 ), vanadium pentoxide (V 2 O 5 ), bismuth oxide (Bi 2 O 3 ), copper oxide (CuO) to form a liquid phase that enhances densification at a lowered temperature It can be reduced by adding a sintering aid such as). (Reference) 1) US Patent 5,423,995, 2) US Patent 5,433,917, 3) US Patent No. 5,792,379, 4) K. Murakami et. al. "Morphotropic Phase Boundary and Microstructure of Low-Temperature sintered PZT ceramics with BiFeO 3 and Ba (Cu 0.5 W 0.5 ) O 3 ", Proceedings of the Ninth IEEE International Symposium on Applications of Ferroelectrics 5) X. Wang et.al., " The Mechanism of Low Temperature Sintering PZT Ceramics with additives of Li 2 O 3 -Bi 2 O 3 -CdO ", Proceedings of Eighth IEEE International Symposium on Applications of Ferroelectrics.) There is a problem of increasing the dielectric loss tangent and worsening the piezoelectric parameter. This liquid phase formed during sintering also has a problem of easily reacting with silver (Ag) or silver (Ag) -palladium (Pd) electrodes and making it difficult to co-sinter the multilayer piezoelectric element.
본 발명은 상술한 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 특히 은(Ag)의 녹는점보다 훨씬 낮은 온도에서 소결될 수 있어, 은(Ag) 전극과 동시소결이 가능한 연성(soft)계 압전 세라믹 조성물을 제공하는 것이다. The present invention has been made to solve the above-mentioned problems, and an object of the present invention is a soft system which can be sintered at a temperature much lower than the melting point of silver (Ag), so that it can be co-sintered with the silver (Ag) electrode. It is to provide a piezoelectric ceramic composition.
본 발명의 다른 목적은 상기 압전 세라믹 조성물을 이용하여 압전 세라믹 장치를 제공하는 것이다. Another object of the present invention is to provide a piezoelectric ceramic device using the piezoelectric ceramic composition.
본 발명의 또 다른 목적은 상기 압전 세라믹 조성물을 이용하여 다층 압전 세라믹 장치를 제공하는 것이다. Still another object of the present invention is to provide a multilayer piezoelectric ceramic device using the piezoelectric ceramic composition.
본 발명의 상기 목적 및 기타의 목적들은 하기 설명되는 본 발명에 의하여 모두 달성될 수 있다. The above and other objects of the present invention can be achieved by the present invention described below.
상기 목적을 달성하기 위하여, 본 발명은 [(Pb1-m-nSrmBan)(1-y)Biy][(ZrxTi1-x )1-a-bNiaWb]O3 (여기서, m,n,x,y,a 및 b는 몰비로서 0.00≤m ≤0.18이고, 0.00≤n ≤0.18이고, 0.00 ≤ (m+n) ≤0.21이고, 0.40 ≤ x ≤ 0.60이고, 0.000 < y ≤ 0.04이고, 0.00 ≤ a ≤0.02이고, 0.00 < b ≤ 0.02이다.) 세라믹 및 0.001 내지 2 중량% 이하의 산화카드뮴(CdO)을 포함하는 연성(soft)계 압전 세라믹 조성물을 제공한다.In order to achieve the above object, the present invention provides [(Pb 1-mn Sr m Ba n ) (1-y) Bi y ] [(Zr x Ti 1-x ) 1-ab Ni a W b ] O 3 (where , m, n, x, y, a and b are 0.00 ≦ m ≦ 0.18 as molar ratio, 0.00 ≦ n ≦ 0.18, 0.00 ≦ (m + n) ≦ 0.21, 0.40 ≦ x ≦ 0.60, and 0.000 <y ≤ 0.04, 0.00 ≤ a ≤ 0.02, and 0.00 <b ≤ 0.02.) A soft piezoelectric ceramic composition comprising a ceramic and 0.001 to 2 wt% or less of cadmium oxide (CdO) is provided.
본 발명은 또한 상기의 압전 세라믹 조성물을 980℃ 이하에서 소결시켜 얻은 압전 세라믹을 포함하여 구성되는 압전 세라믹 장치를 제공한다.The present invention also provides a piezoelectric ceramic device comprising a piezoelectric ceramic obtained by sintering the above piezoelectric ceramic composition at 980 ° C. or lower.
본 발명은 또한 상기의 압전 세라믹 조성물을 은(Ag) 내부전극과 함께 960℃ 이하에서 동시소결하여 얻은 압전 세라믹 층을 포함하여 구성되는 압전 세라믹 장치를 제공한다.The present invention also provides a piezoelectric ceramic device comprising a piezoelectric ceramic layer obtained by co-sintering the piezoelectric ceramic composition with silver (Ag) internal electrode at 960 ° C. or lower.
본 발명은 또한 상기 압전 세라믹 조성물을 은(Ag)-팔라듐(Pd) 내부전극과 함께 1050℃ 이하에서 동시소결하여 얻은 압전 세라믹 층을 포함하여 구성되는 다층 압전 세라믹 장치를 제공한다.The present invention also provides a multilayer piezoelectric ceramic device comprising a piezoelectric ceramic layer obtained by co-sintering the piezoelectric ceramic composition with a silver (Ag) -palladium (Pd) internal electrode at 1050 ° C. or lower.
이하 본 발명을 더욱 상세하게 설명한다. Hereinafter, the present invention will be described in more detail.
본 발명의 연성(soft)계 압전 세라믹 조성물은 필수성분으로 [(Pb1-m-nSrmBan)(1-y)Biy][(ZrxTi1-x )1-a-bNiaWb]O3 (여기서, m,n,x,y,a 및 b는 몰비로서 0.00≤m ≤0.18이고, 0.00≤n ≤0.18이고, 0.00 ≤ (m+n) ≤0.21이고, 0.40 ≤ x ≤ 0.60이고, 0.000 < y ≤ 0.04이고, 0.00 ≤ a ≤0.02이고, 0.00 < b ≤ 0.02이다.) 세라믹 및 산화카드뮴(CdO)을 포함한다.The soft piezoelectric ceramic composition of the present invention is an essential component [(Pb 1-mn Sr m Ba n ) (1-y) Bi y ] [(Zr x Ti 1-x ) 1-ab Ni a W b ] O 3 , where m, n, x, y, a and b are molar ratios of 0.00 ≦ m ≦ 0.18, 0.00 ≦ n ≦ 0.18, 0.00 ≦ (m + n) ≦ 0.21, 0.40 ≦ x ≦ 0.60 And 0.000 <y ≦ 0.04, 0.00 ≦ a ≦ 0.02, and 0.00 <b ≦ 0.02.) Ceramic and cadmium oxide (CdO).
본 발명의 연성(soft)계 압전 세라믹 조성물의 필수성분인 [(Pb1-m-nSrmBan)(1-y)Biy][(ZrxTi1-x )1-a-bNiaWb]O3 세라믹은 Pb(Zr, Ti)O3의 기본 기지(matrix)에서 Pb2+ 대신 Sr2+ , Ba2+와 Bi3+이, Zr4+ 또는 Ti4+ 대신 Ni2+ 와 W6+이 치환된 것이다.[(Pb 1-mn Sr m Ba n ) (1-y) Bi y ] [(Zr x Ti 1-x ) 1-ab Ni a W b which is an essential component of the soft piezoelectric ceramic composition of the present invention ] O 3 ceramics are used at the base matrix of Pb (Zr, Ti) O 3 Sr 2+ , Ba 2+ and Bi 3+ instead of Pb 2+ replace Zr 4+ or Ti 4+ Ni 2+ and W 6+ are substituted.
Sr2+ 또는 Ba2+는 결합계수(coupling factor)와 탄성계수(elastic modulus)를 많이 변화시키지 아니하면서 유전상수(dielectric constant)를 증가시키기 때문에 큐리온도(Tc)의 감소와 함께 압전 상수(piezoelectric constant, d33)를 증가시키는 역할을 한다.Sr 2+ or Ba 2+ increases the dielectric constant without significantly changing the coupling factor and elastic modulus, so the piezoelectric with a decrease in the Curie temperature (Tc) constant, d 33 ).
Bi3+ 가 Pb2+를 치환하고 또는 W6+ 이 Zr4+ 또는 Ti4+를 치환하는 것은 PZT의 Pb2+ 사이트(site)에 공공(vacancy)을 형성하고, 다음과 같은 연성(soft)계 압전 세라믹의 압전기 특성을 부여한다.Bi 3+ substitutes for Pb 2+ or Substitution of Zr 4+ or Ti 4+ by W 6+ forms a vacancy at the Pb 2+ site of PZT and imparts the piezoelectric properties of the soft piezoelectric ceramic as follows.
1) 높은 압전 상수(piezoelectric constant), 1) high piezoelectric constant,
2) 높은 전기기계결합계수(electro-mechanical coupling coefficient), 2) high electro-mechanical coupling coefficient,
3) 높은 유전손실(dielectric loss), 3) high dielectric loss,
4) 낮은 기계적품질계수(mechanical quality factor).4) low mechanical quality factor.
O2-를 F-로 치환하는 것 역시 Pb2+ 사이트(site)에 공공(vacancy)을 형성한다. Ni2+ 는 압전 정수(piezoelectric parameter)을 증가시키고, Ni2+ 는 W6+ 와 비교한 크기와 원자가 상태(valence state)의 차이에 따라 첨가되는 W6+ 의 최대량에 영향을 미친다.Substitution of O 2- with F − also forms vacancy at the Pb 2+ site. Ni 2+ increases the piezoelectric constant (piezoelectric parameter) and, Ni 2+ influences the maximum amount of W 6+ to be added according to the difference in sizes and valence states (valence state) compared to the W 6+.
Bi3+ 는 저하된 온도에서 소결의 초기단계에 치밀화를 효과적으로 높여주지만, 압전 정수(piezoelectric parameter)를 현저하게 악화시키지 아니하고 소결과정의 종결시에 압전세라믹의 기지(matrix)로 도입되는 소위말하는 중간 유리상(transient liquid phase)를 형성한다.Bi 3+ effectively increases densification in the early stages of sintering at reduced temperatures, but does not significantly deteriorate the piezoelectric parameters and is introduced into the matrix of the piezoceramic at the end of the sintering process. Form a transient liquid phase.
[(Pb1-m-nSrmBan)(1-y)Biy][(ZrxTi1-x )1-a-bNiaWb]O3 세라믹에서 m,n,x,y,a 및 b는 몰비로서, 0.00≤m ≤0.18이고, 0.00≤n ≤0.18이고, 0.00 ≤ (m+n) ≤0.21이고, 0.40 ≤ x ≤ 0.60이고, 0.000 < y ≤ 0.04이고, 0.00 ≤ a ≤0.02이고, 0.00 < b ≤ 0.02이다.[(Pb 1-mn Sr m Ba n ) (1-y) Bi y ] [(Zr x Ti 1-x ) 1-ab Ni a W b ] O 3 In ceramics m, n, x, y, a and b is a molar ratio: 0.00 ≦ m ≦ 0.18, 0.00 ≦ n ≦ 0.18, 0.00 ≦ (m + n) ≦ 0.21, 0.40 ≦ x ≦ 0.60, 0.000 <y ≦ 0.04, 0.00 ≦ a ≦ 0.02 , 0.00 <b ≦ 0.02.
Bi3+의 양인 y는 몰비로서 0.000 < y ≤ 0.04, Ni2+ 의 양인 a는 몰비로서 0.00 ≤ a ≤0.02, W6+의 양, b는 몰비로서 0.00 < b ≤ 0.02의 값을 갖는 것이 저하된 온도에서 소결되는 연성(soft)계 압전 세라믹 물질로 압전율(d33), 전기기계결합계수(kp) 등과 같은 압전 정수(piezoelectric parameter)을 실용레벨까지 얻기 위해서 바람직하며 y, a 및 b의 비가 1: 0.5~1 :0.33~0.5 인 것이 더욱 바람직하다. 하한치 보다 낮거나 상한치 보다 높은 경우에는, 압전 정수(piezoelectric parameter, d33 ) 또는 전기기계결합계수(electro-mechanical parameter)가 연성(soft)계 압전 세라믹으로써 아주 많이 감소되는 문제점이 있다. Sr의 양인 m은 몰비로서 0.00≤m ≤0.18, Ba의 양인 n은 몰비로서 0.00≤n ≤0.18, 0.00 ≤ (m+n) ≤0.21 값을 갖는 것이 필요한 유전상수(dielectric constant)와 큐리온도(Curie point,Tc)를 얻기위해 바람직하다. Ti에 대한 Zr의 상대적인 양인 x는 몰비로서 0.4 이상 0.6 이하의 값을 갖는 것이 압전율(piezoelectric modulus, d33), 전기기계결합계수(kp), 온도계수(temperature coefficient), 유전상수(dielectric constant) 또는 공진주파수(resonant frequency)와 같은 필요한 압전 정수(piezoelectric parameter) 최적화하기 위해 바람직하다.Positive of Bi 3+ y is a molar ratio of 0.000 <y ≦ 0.04, a quantity of Ni 2+ , a is a molar ratio of 0.00 ≦ a ≦ 0.02, W 6+ , and b is a molar ratio of 0.00 <b ≦ 0.02 and sintered at a reduced temperature It is a soft piezoelectric ceramic material, which is preferable to obtain piezoelectric parameters such as piezoelectricity (d 33 ) and electromechanical coupling coefficient (k p ) to practical levels, and the ratio of y, a and b is 1: It is more preferable that it is 0.5-1: 0.33-0.5. If it is lower than the lower limit or higher than the upper limit, the piezoelectric parameter d 33 or the electro-mechanical parameter is greatly reduced by the soft piezoelectric ceramic. M, the amount of Sr, is 0.00≤m≤0.18 as molar ratio, and n, the amount of Ba is molar ratio, which is required to have a value of 0.00≤n≤0.18, 0.00≤ (m + n) ≤0.21. It is desirable to obtain Curie point, Tc). X, the relative amount of Zr to Ti, has a molar ratio of 0.4 to 0.6 and has a piezoelectric modulus (d 33 ), an electromechanical coupling coefficient (k p ), a temperature coefficient, and a dielectric constant. It is desirable to optimize the required piezoelectric parameters, such as constant or resonant frequency.
본 발명의 연성(soft)계 압전 세라믹 조성물은 필수성분으로 산화카드뮴(CdO)을 소결보조제로 포함하며, 산화납(Ⅱ)(PbO) 및 불화리튬(LiF)로 이루어진 군으로부터 선택되는 하나 이상의 소결보조제를 더 포함하는 것이 바람직하다. The soft piezoelectric ceramic composition of the present invention includes cadmium oxide (CdO) as an sintering aid as an essential component, and at least one sintered selected from the group consisting of lead (II) oxide (PbO) and lithium fluoride (LiF). It is preferable to further include an adjuvant.
이러한 소결보조제는 Bi2O3 와 낮은 온도에서 중간 유리상(transient liquid phase)를 형성하고, 소결동안 치밀화를 도와준다. 소결보조제 또는 Bi2O3 의 모든 원소는 PZT 기지(matrix)에 어느 정도의 용해성을 갖고 중간 유리상(transient liquid phase)에서 대분분이 소결과정 후반부에 PZT 기지(matrix)로 도입되어 현저하게 압전 정수(piezoelectric parameter)를 악화시키지 않는다.These sintering aids form a transient liquid phase at low temperatures with Bi 2 O 3 and assist in densification during sintering. All elements of the sintering aid or Bi 2 O 3 have some degree of solubility in the PZT matrix, and most of the elements in the intermediate liquid phase are introduced into the PZT matrix later in the sintering process. does not deteriorate the piezoelectric parameters.
상기 소결보조제는 저하된 온도에서 소결의 초기단계에 치밀화를 효과적으로 높여주지만, 압전 정수(piezoelectric parameter)를 현저하게 악화시키지 아니하고 소결과정 종결시에 압전세라믹의 기지(matrix)로 도입되는 중간 유리상(transient liquid phase)를 형성한다.The sintering aid effectively increases densification in the early stages of sintering at reduced temperatures, but does not significantly deteriorate the piezoelectric parameters and is introduced into the matrix of the piezoceramic at the end of the sintering process. to form a liquid phase.
상기 소결보조제 중 산화카드뮴(CdO)의 함량은 0.001 내지 2 중량% 이하가 바람직하다. 한편 소결보조제 중 산화납(Ⅱ)(PbO) 의 함량은 0.001 내지 2 중량% 이하가 바람직하며, 불화리튬(LiF)의 함량은 0.001 내지 1.6 중량% 이하가 바람직하다. 이러한 조건을 넘어서면 저하된 온도에서 소결되는 연성(soft)계 압전 세라믹 물질로 d33, kp 등등과 같은 압전 정수(piezoelectric parameter)을 실용레벨까지 얻지 못하며, 압전 정수(piezoelectric parameter, d33 ) 또는 전기기계결합계수(electro-mechanical parameter)가 연성(soft)계 압전세라믹으로써 아주 많이 감소되는 문제점이 있다.The content of cadmium oxide (CdO) in the sintering aid is preferably 0.001 to 2% by weight or less. Meanwhile, the content of lead oxide (II) (PbO) in the sintering aid is preferably 0.001 to 2% by weight or less, and the content of lithium fluoride (LiF) is preferably 0.001 to 1.6% by weight or less. Beyond these conditions, the soft piezoelectric ceramic material sintered at the reduced temperature does not obtain the piezoelectric parameters such as d 33 , k p, etc. to the practical level, and the piezoelectric parameters d 33 ). Alternatively, the electro-mechanical parameter is very much reduced by soft piezoelectric ceramics.
이하 실시예 및 실험예로서 본 발명을 상세히 설명한다. Hereinafter, the present invention will be described in detail with Examples and Experimental Examples.
그러나 하기한 실시예는 본 발명의 바람직한 일 실시예일 뿐 본 발명이 하기한 실시예에 한정되는 것은 아니다. However, the following examples are only one preferred embodiment of the present invention and the present invention is not limited to the following examples.
[실시예]EXAMPLE
[연성(soft)계 압전세라믹 조성물의 제조][Production of Soft Piezoceramic Composition]
산화납(PbO), 산화지르코늄(ZrO2), 산화티탄(TiO2), 탄산스트론튬(SrCO3), 탄산바륨(BaCO3), 산화카드륨(CdO), 산화비스무스(Bi2O3) 및 불화리튬(LiF)을 출발물질로 사용한다. 실시예 1 내지 38을 표 1에 따른 조성으로 측량한다.Lead oxide (PbO), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), strontium carbonate (SrCO 3 ), barium carbonate (BaCO 3 ), cadmium oxide (CdO), bismuth oxide (Bi 2 O 3 ), and Lithium fluoride (LiF) is used as starting material. Examples 1 to 38 are weighed into compositions according to Table 1.
[비교예1 내지 3] [Comparative Examples 1 to 3]
상기 표 1에 따른 조성으로 비교예 1, 2, 3을 제조한다.Comparative Examples 1, 2, and 3 were prepared by the composition according to Table 1 above.
측량된 물질을 탈이온수를 이용하여 아트리션 밀에서 습식 혼합하고, 건조된 케익을 2시간 동안 750 ~ 875℃에서 하소한다. 하소된 물질을 아트리션 밀에서 평균 약 0.8 미크론의 크기로 입자 크기를 감소시키기 위해 분쇄한다. 분쇄된 분말은 건조된 후 10% PVA 용액을 이용하여 과립화한다. PVA 양은 분쇄된 분말의 2 중량%이다. 과립화된 분말을 가지고 직경 25mm, 두께 2.5mm의 그린 디스크를 1,000Kg/cm2 압력에서 만든다. 압착된 그린 디스크(green disk)는 2시간 동안 920 ~ 1000℃에서 소결된다. 은 페이스트(Ag paste)는 양표면에 프린트되고, 15분 동안 700 ~ 820℃에서 연소시킨다. 전극화된 디스크를 15분동안 120 ~140℃ 의 실리콘 오일 bath에서 3-4kV/mm 전압을 인가함으로써 분극처리한다. 유전상수(dielectric constant)와 유전손실 계수(dielectric loss tangent)는 1kHz에서 LCR meter를 사용하여 측정하였다. 압전정수(piezoelectric modulus, d33)은 Berlincourt d33 meter를 사용하여 측정하였다. 평면결합계수(planar coupling coefficient)와 기계적 품질계수(mechanical quality factor)는 Impedance/Gain-Phase analyser로 측정된 공진주파수(resonant frequency), 반공진주파수(anti-resonant frequency), 공진임피던스(resonance impedance)와 LCR meter로 측정한 전기용량을 가지고 계산하였다. 밀도는 측정한 직경과 두께를 가지고 계산하였다.The weighed material is wet mixed in an atrium mill using deionized water and the dried cake is calcined at 750-875 ° C. for 2 hours. The calcined material is ground in an atrium mill to reduce the particle size to an average size of about 0.8 microns. The ground powder is dried and then granulated with 10% PVA solution. PVA amount is 2% by weight of the ground powder. A green disk 25 mm in diameter and 2.5 mm thick with granulated powder is made at 1,000 Kg / cm 2 pressure. The compressed green disk is sintered at 920-1000 ° C. for 2 hours. Ag paste is printed on both surfaces and burned at 700 to 820 ° C for 15 minutes. The electrodeled disc is polarized by applying a 3-4 kV / mm voltage in a silicon oil bath at 120-140 ° C. for 15 minutes. Dielectric constant and dielectric loss tangent were measured using an LCR meter at 1 kHz. Piezoelectric modulus (d 33 ) was measured using a Berlincourt d 33 meter. Planar coupling coefficients and mechanical quality factors are measured using the Impedance / Gain-Phase analyzer, the resonant frequency, anti-resonant frequency, and resonance impedance. Calculated with capacitance measured with and LCR meter. Density was calculated with the measured diameter and thickness.
[연성(soft)계 압전 세라믹 조성물의 특성][Characteristics of Soft Piezoelectric Ceramic Compositions]
실시예 및 비교예의 측량된 압전 특성을 표 2, 3, 4 및 5에 나타내었다. The measured piezoelectric properties of the examples and comparative examples are shown in Tables 2, 3, 4 and 5.
표 2는 실시예 및 비교예의 조성물을 985 ℃에서 소결시켰을 때의 압전 특성을 나타낸 표이다.Table 2 is a table showing piezoelectric properties when the compositions of Examples and Comparative Examples were sintered at 985 ° C.
상기 표 2에서 볼 수 있는 바와 같이 실시예 1 내지 38은 985℃에서 소결했을 때 317 ~ 574의 압전율(d33), 0.42 ~ 0.67의 전기기계결합계수, 1060 ~ 3210의 ε33 T/ε0를 나타냈었다. 이는 비교예 1 내지 3 보다 실시예 1 내지 38이 높은 압전율(d33), 높은 전기기계결합계수(Kp), 높은 ε33 T/ε0를 나타냄을 알 수 있다.As can be seen in Table 2, Examples 1 to 38 have a piezoelectric coefficient (d 33 ) of 317 to 574, an electromechanical coefficient of 0.42 to 0.67, and ε 33 T / ε of 1060 to 3210 when sintered at 985 ° C. 0 was shown. It can be seen that Examples 1 to 38 show higher piezoelectricity (d 33 ), higher electromechanical coupling coefficient (Kp), and higher ε 33 T / ε 0 than Comparative Examples 1 to 3.
표 3은 실시예 및 비교예의 조성물을 960 ℃에서 소결시켰을 때의 압전 특성을 나타낸 표이다.Table 3 is a table showing piezoelectric properties when the compositions of Examples and Comparative Examples were sintered at 960 ° C.
상기 표 3에서 볼 수 있는 바와 같이 실시예 1 내지 38은 960℃에서 소결했을 때 326 ~ 526의 압전율(d33), 0.52 ~ 0.65의 전기기계결합계수, 1580 ~ 2470의 ε33 T/ε0를 나타냈었다. 이는 비교예 1 내지 3 보다 실시예 1 내지 36이 높은 압전율(d33), 높은 전기기계결합계수(Kp), 높은 ε33 T/ε0를 나타냄을 알 수 있다.As can be seen in Table 3, Examples 1 to 38 have a piezoelectric coefficient (d 33 ) of 326 to 526, an electromechanical coefficient of 0.52 to 0.65, and an ε 33 T / ε of 1580 to 2470 when sintered at 960 ° C. 0 was shown. It can be seen that Examples 1 to 36 show higher piezoelectricity (d 33 ), higher electromechanical coupling coefficient (Kp), and higher ε 33 T / ε 0 than Comparative Examples 1 to 3.
표 4는 실시예 및 비교예의 조성물을 950 ℃에서 소결시켰을 때의 압전 특성을 나타낸 표이다.Table 4 is a table showing piezoelectric properties when the compositions of Examples and Comparative Examples were sintered at 950 ° C.
상기 표 4에서 볼 수 있는 바와 같이 실시예 1 내지 38은 950℃에서 소결했을 때 266 ~ 559의 압전율(d33), 0.32 ~ 0.66의 전기기계결합계수, 1155 ~ 3630의 ε33 T/ε0를 나타냈었다. 이는 비교예 1 내지 3 보다 실시예 1 내지 38이 높은 압전율(d33), 높은 전기기계결합계수(Kp), 높은 ε33 T/ε0를 나타냄을 알 수 있다.As can be seen in Table 4, Examples 1 to 38 have piezoelectric coefficients (d 33 ) of 266 to 559, electromechanical coupling coefficients of 0.32 to 0.66, and ε 33 T / ε of 1155 to 3630 when sintered at 950 ° C. 0 was shown. It can be seen that Examples 1 to 38 show higher piezoelectricity (d 33 ), higher electromechanical coupling coefficient (Kp), and higher ε 33 T / ε 0 than Comparative Examples 1 to 3.
표 5는 실시예 및 비교예의 조성물을 938 ℃에서 소결시켰을 때의 압전 특성을 나타낸 표이다.Table 5 is a table showing piezoelectric properties when the compositions of Examples and Comparative Examples were sintered at 938 ° C.
상기 표 5에서 볼 수 있는 바와 같이 실시예 1 내지 38은 938℃에서 소결했을 때 156 ~ 560의 압전율(d33), 0.26 ~ 0.65의 전기기계결합계수, 1155 ~ 3420의 ε33 T/ε0를 나타냈었다. 이는 비교예 1 내지 3 보다 실시예 1 내지 38이 높은 압전율(d33), 높은 전기기계결합계수(Kp), 높은 ε33 T/ε0를 나타냄을 알 수 있다.As can be seen in Table 5, Examples 1 to 38 have piezoelectric coefficients (d 33 ) of 156 to 560, electromechanical coupling coefficients of 0.26 to 0.65, and ε 33 T / ε of 1155 to 3420 when sintered at 938 ° C. 0 was shown. It can be seen that Examples 1 to 38 show higher piezoelectricity (d 33 ), higher electromechanical coupling coefficient (Kp), and higher ε 33 T / ε 0 than Comparative Examples 1 to 3.
상기 표 2, 3, 4 및 5에서 볼 수 있는 바와 같이, 실시예 1 내지 38은 990℃ 이하에서 소결되었을 때, 높은 압전율(d33), 높은 전기계결합계수(Kp), 높은 유전상수(dielectric constant) 등등과 같은 전형적인 연성(soft)계 압전 세라믹 물질의 좋은 특징을 보여주는 것을 확인하였다. 실시예 1 내지 38은 960℃ 아래에서 소결되었을 때 조차도 좋은 압전 정수(piezoelectric parameter)를 보여주었고, 따라서 순 은(Ag) 내부 전극과 동시소결하는 것이 가능하게 된다.As can be seen in Tables 2, 3, 4 and 5, Examples 1 to 38, when sintered at 990 ℃ or less, high piezoelectric coefficient (d 33 ), high electric field coupling coefficient (Kp), high dielectric constant It has been found to show good characteristics of typical soft piezoelectric ceramic materials such as (dielectric constant) and the like. Examples 1 to 38 showed good piezoelectric parameters even when sintered below 960 ° C., thus making it possible to co-sinter with pure silver (Ag) internal electrodes.
[실시예]EXAMPLE
[순은 내부전극을 가진 다층 압전 플레이트의 제조] [Production of Multi-layer Piezoelectric Plates with Pure Silver Internal Electrodes]
순은 내부전극을 가진 다층 압전 플레이트를 본 발명의 연성(soft) 압전 세라믹 조성물을 가지고 제조하였다. 상기 실시예 3을 그 예로 선택하였다. A multilayer piezoelectric plate with a sterling silver internal electrode was prepared with the soft piezoelectric ceramic composition of the present invention. Example 3 above was chosen as an example.
다층 압전 플레이트의 제조는 압전 세라믹 물질의 합성, 그린 시트의 제조, 전극 패턴 프린트, 다층 적층, 적층된 그린 바의 동시소결, 은(Ag) 페이스트로 외부 전극 처리 및 분극(poling)으로 구성된다. 하소된 물질을 폴리비닐부티랄(PVB;Polyvinyl Butyral)과 다이부틸프탈레이트(DBP;Dibutyl Phthalate), 어유(Fish oil), 메틸에틸케톤(MEK; methyl ethyl ketone)과 톨루엔(toluene)으로 구성된 바인더 용액과 함께 36시간 동안 볼밀에서 혼합한다. 분쇄된 슬러리를 진공하에서 탈포(deair)하고 닥터블레이드 캐스팅 머신(doctor blade casting machine)을 이용하여 PET 필름위에 두께 120 미크론의 테이프를 성형한다. 그린 테이프(Green tape)를 정렬용 구멍을 가진 150mm x 150mm의 시트로 자른다. 교대로 반복되는 내부전극은 순은 페이스트를 사용하여 그린시트(green sheet)에 프린트하고, 연속식 오븐에서 건조한다. 프린트된 그린시트는 레이스트리에서 정렬용 구멍을 이용하여 적층되고, 85℃ 진공하에서 가열압착한다. 가열 압착된(Hot-laminated) 그린 바(green bar)를 각각의 그린 엘리먼트(green element)로 자른다. 그린 엘리먼트(green element)에 있는 유기물 뿐만 아니라 결합제를 260℃에서 제거고, 940℃에서 2시간 동안 소결하였다. 외부 전극은 은(Ag) 페이스트를 이용하여 스크린 프린트하고 780℃에서 소부하였다. 분극은 130℃의 실리콘 오일 bath에서 450VDC의 분극(poling) 전압으로 이루어졌다. 다층 압전 플레이트의 크기는 5.13 mm x 5.13 mm x 1.04 mm이고 20개의 내부전극을 갖고 19개의 압전 활성층으로 구성되어 있다. 각 층의 두께는 50 micron이였고, 커버시트를 플레이트의 바닥과 표면에 형성했다. 도 1 및 도 2는 은(Ag) 내부 전극과 함께 동시소결된 다층 압전기 플레이트의 단면도이다. 은(Ag) 내부 전극의 표면은 눈에 띄는 구멍 또는 적층분리(delamination) 없이 아주 우수했고 매우 작은 공진 임피던스와 우수한 압전특성을 나타냈다. 은(Ag) 페이스트는 950℃에서 동시소결됐음에도 불구하고 실시예 3의 연성(soft)계 압전 세라믹 조성물로 제조된 PZT 기지(matrix)와 눈에 띄는 반응이 없었다. 도 3은 제조된 플레이트의 impedance/phase 특성을 보여주는 그래프이다. 공진주파수(Resonance frequency)는 플레이트의 폭에 따라 381.5 kHz이고 공진주파수(resonance frequency)는 80 mohm이다. 최대 위상각(phase angle)은 87.26 degree이다. The manufacture of multilayer piezoelectric plates consists of the synthesis of piezoelectric ceramic materials, the manufacture of green sheets, electrode pattern printing, multilayer lamination, co-sintering of laminated green bars, external electrode treatment with silver (Ag) paste, and polarization. The calcined material is a binder solution consisting of polyvinyl butyral (PVB), dibutyl phthalate (DBP; dibutyl phthalate), fish oil, methyl ethyl ketone (MEK) and toluene (toluene). And mix in a ball mill for 36 hours. The ground slurry is deaired under vacuum and a 120 micron thick tape is formed on the PET film using a doctor blade casting machine. The green tape is cut into sheets of 150 mm x 150 mm with alignment holes. The alternating internal electrodes are printed on a green sheet using sterling silver paste and dried in a continuous oven. The printed green sheet is laminated using the alignment holes in the laces and heat-pressed under 85 ° C vacuum. The hot-laminated green bar is cut into each green element. The binder as well as the organics in the green element were removed at 260 ° C. and sintered at 940 ° C. for 2 hours. The external electrode was screen printed using silver (Ag) paste and baked at 780 ° C. Polarization consisted of a poling voltage of 450 VDC in a 130 ° C. silicon oil bath. The size of the multilayer piezoelectric plate is 5.13 mm x 5.13 mm x 1.04 mm and consists of 19 piezoelectric active layers with 20 internal electrodes. Each layer was 50 microns thick and cover sheets were formed on the bottom and surface of the plate. 1 and 2 are cross-sectional views of a multilayer piezoelectric plate co-sintered with silver (Ag) internal electrodes. The surface of the silver internal electrode was excellent without noticeable holes or delamination, showing very small resonance impedance and excellent piezoelectric properties. Although the silver (Ag) paste co-sintered at 950 ° C., there was no noticeable reaction with the PZT matrix made from the soft piezoelectric ceramic composition of Example 3. 3 is a graph showing the impedance / phase characteristics of the manufactured plate. The resonance frequency is 381.5 kHz depending on the width of the plate and the resonance frequency is 80 mohm. The maximum phase angle is 87.26 degrees.
이 다층 압전 플레이트는 단지 예시일 뿐이고, 예를 들어 다층 적층 엑츄에이터, 다층 센서(multilayer sensor), 다층 바이모르프(multilayered bimorph) 등과 같은 순은(Ag) 내부전극을 가진 많은 다른 다층 압전세라믹 장치를 제조할 수 있다.This multilayer piezoelectric plate is just an example and manufactures many other multilayer piezoceramic devices with pure silver (Ag) internal electrodes such as, for example, multilayer stacked actuators, multilayer sensors, multilayer bimorphs, and the like. can do.
상기에서 설명된 바와 같이, 본 발명의 연성(soft)계 압전 세라믹 조성물은 높은 압전 상수(piezoelectric constant)와 전기기계결합계수(electro-mechanical coupling coefficient)를 가지고, 은 전극과 동시소결할 수 있다. As described above, the soft piezoelectric ceramic composition of the present invention has a high piezoelectric constant and an electro-mechanical coupling coefficient, and can be co-sintered with the silver electrode.
본 발명의 연성(soft)계 압전 세라믹 조성물에 의하면, 은(Ag)-팔라듐(Pd) 내부전극과 비교하여 전극의 비용을 절감할 수 있는 순은 내부전극을 가진 다층 압전기 액추에이터등과 같은 압전 세라믹 장치를 제조할 수 있다. According to the soft piezoelectric ceramic composition of the present invention, a piezoelectric ceramic device such as a multilayer piezoelectric actuator or the like having a pure silver internal electrode which can reduce the cost of the electrode compared to the silver (Ag) -palladium (Pd) internal electrode. Can be prepared.
도 1은 본 발명에 따른 압전 세라믹 장치의 일실시예인 은(Ag) 내부 전극과 함께 동시소결된 다층 압전 플레이트의 단면도이다.1 is a cross-sectional view of a multilayer piezoelectric plate co-sintered with silver (Ag) internal electrodes, which is one embodiment of a piezoelectric ceramic device according to the present invention.
도 2는 본 발명에 따른 압전 세라믹 장치의 일실시예인 은(Ag) 내부 전극과 함께 동시소결된 다층 압전 플레이트의 단면도이다.2 is a cross-sectional view of a multilayer piezoelectric plate co-sintered with silver (Ag) internal electrodes, which is one embodiment of a piezoelectric ceramic device according to the present invention.
도 3은 본 발명에 따른 압전 세라믹 장치의 일실시예인 다층 압전 플레이트의 impedance/phase 특성을 보여주는 그래프이다. Figure 3 is a graph showing the impedance / phase characteristics of a multilayer piezoelectric plate as one embodiment of a piezoelectric ceramic device according to the present invention.
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