KR100465532B1 - Automated etch tool for small area using blast nozzle - Google Patents
Automated etch tool for small area using blast nozzle Download PDFInfo
- Publication number
- KR100465532B1 KR100465532B1 KR10-2003-0006295A KR20030006295A KR100465532B1 KR 100465532 B1 KR100465532 B1 KR 100465532B1 KR 20030006295 A KR20030006295 A KR 20030006295A KR 100465532 B1 KR100465532 B1 KR 100465532B1
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- wafer
- spray nozzle
- area
- analyzed
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Abstract
본 발명은 분사노즐을 이용한 극소영역 자동화 식각장치에 관한 것으로, 특히 공정이 완료된 웨이퍼(Wafer) 분석에 있어서 특정영역만을 정확히 식각함으로써 웨이퍼에 손상을 주지 않고, 필요한 영역의 구조 분석용 샘플의 제작에 관한 것이다.The present invention relates to a micro area automated etching apparatus using an injection nozzle, and in particular, in the analysis of wafers in which a process is completed, by precisely etching only a specific area, the wafer is not damaged, and thus, the fabrication of a sample for structural analysis of a required area is performed. It is about.
본 발명의 분사노즐을 이용한 극소영역 자동화 식각장치는 얇은 판 모양의 웨이퍼, 상기 웨이퍼을 고정하는 웨이퍼 고정부, 상기 웨이퍼상의 소정의 분석할 영역을 식각할 수 있는 노즐 및 식각에 필요한 식각용액을 제공하는 제어부로 이루어짐에 기술적 특징이 있다.The micro-area automated etching apparatus using the spray nozzle of the present invention provides a thin plate-shaped wafer, a wafer fixing portion for fixing the wafer, a nozzle for etching a predetermined region to be analyzed on the wafer, and an etching solution for etching. There is a technical feature in that it consists of a control unit.
따라서, 본 발명의 분사노즐을 이용한 극소영역 자동화 식각장치는 공정이 완료된 웨이퍼의 분석할 특정 영역만을 식각하여 분석할 최소의 칩만을 손상시킴으로써 고가의 웨이퍼를 보호하고 식각 손상영역을 제외하고는 웨이퍼 전체를 이용한 시험 및 불량분석 업무의 수행이 가능한 효과가 있다.Therefore, the micro-area automated etching apparatus using the spray nozzle of the present invention protects the expensive wafer by etching only a specific area to be analyzed and damaging only the minimum chip to be analyzed, and the entire wafer except the etching damage area. There is an effect that can perform the test and failure analysis work using.
Description
본 발명은 분사노즐을 이용한 극소영역 자동화 식각장치에 관한 것으로, 특히 공정이 완료된 웨이퍼 분석에 있어서 특정영역만을 정확히 식각함으로써 웨이퍼에 손상을 주지 않고, 필요한 영역의 구조 분석용 샘플의 제작에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micro area automated etching apparatus using injection nozzles, and more particularly, to fabricating a sample for structural analysis of a required area without damaging the wafer by precisely etching only a specific area in a wafer analysis in which a process is completed.
종래에는 다음과 같은 반도체 불량분석용 샘플 제작 방법이 있었는데, 도 1을 통하여 설명해 보기로 한다. 도 1은 공정이 완료된 웨이퍼의 샘플식각방법으로 분석 대상 웨이퍼를 자른 후, 식각하여 전자현미경을 이용한 반도체 구조분석이 가능하다. (10)은 웨이퍼를 위에서 본 형상이며, 이 상태에서는 특정 부분의 샘플 식각은 불가능하다. (11)은 분석 대상 영역을 웨이퍼에서 잘라낸 샘플을 의미한다. (12)는 분석 대상 샘플을 전자현미경 분석이 가능한 상태로 식각한 샘플이며, 이 상태에서 전자현미경 구조분석이 가능하다.Conventionally, there was a method for preparing a semiconductor defect analysis sample as follows, which will be described with reference to FIG. 1. 1 is a semiconductor structure analysis using an electron microscope after the wafer to be analyzed by cutting the wafer to be analyzed by a sample etching method of the process is completed. Denoted at 10 is a shape where the wafer is viewed from above, and sample etching of a specific portion is impossible in this state. (11) means the sample which cut out the analysis target area | region from the wafer. (12) is a sample obtained by etching the sample to be analyzed under an electron microscope, in this state, electron microscope structure analysis is possible.
그러나, 상기와 같은 종래의 식각장치는 웨이퍼를 잘라서 샘플을 제작함으로써 웨이퍼를 손상시키는 문제점이 있었다. 대한민국 공개특허 제1998-069634호와 공개실용신안 제1998-067261호에서와 같은 자동화 식각장치에서도 이러한 문제점을 해결하는 방안은 제시하지 못하고 있다.However, the conventional etching apparatus as described above has a problem of damaging the wafer by cutting the wafer to produce a sample. Even in an automated etching apparatus such as Korean Patent Application Laid-Open Publication No. 1998-069634 and Korean Utility Model Publication No. 1998-067261, there is no solution to solve this problem.
따라서, 본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로공정이 완료된 웨이퍼의 분석에 있어서 특정영역만을 정확하게 식각함으로써 웨이퍼에 손상을 주지 않고, 필요한 영역의 구조 분석용 샘플을 제공함에 본 발명의 목적이 있다.Accordingly, the present invention is to solve the problems of the prior art as described above to provide a sample for structural analysis of the required area without damaging the wafer by accurately etching only a specific area in the analysis of the wafer is completed. There is a purpose.
도 1은 종래기술의 식각장치1 is a conventional etching apparatus
도 2는 본 발명의 식각장치2 is an etching apparatus of the present invention
(도면의 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
10: 웨이퍼를 위에서 본 형상10: wafer viewed from above
11: 분석 대상 영역을 웨이퍼에서 잘라낸 샘플11: Sample cut from wafer to area to be analyzed
12: 분석 대상 샘플을 전자현미경 분석이 가능한 상태로 식각한 샘플12: Etched sample to be analyzed under an electron microscope
20: 웨이퍼의 분석할 영역20: area of the wafer to be analyzed
21: 노즐21: nozzle
22: 분무장치에 의해 기체화된 식각용액22: etching solution gasified by the spray device
23: 얇은 판 모양을 가진 웨이퍼23: wafer with lamination
24: 웨이퍼 고정부24: wafer holding part
25: 제어부25: control unit
본 발명의 상기 목적은 공정이 완료된 웨이퍼의 분석에 있어서 특정 영역만을 정확하게 식각함으로써 웨이퍼에 손상을 주지 않고, 필요한 영역의 구조 분석용 샘플을 제공하는 것이다.It is an object of the present invention to provide a sample for structural analysis of a required area without damaging the wafer by accurately etching only a specific area in the analysis of the completed wafer.
본 발명의 상기 목적과 기술적 구성 및 그에 따른 작용 효과에 관한 자세한 사항은 본 발명의 바람직한 실시예를 도시하고 있는 도 2를 참조한 이하 상세한 설명에 의해 보다 명확하게 이해될 것이다.Details of the above object and technical configuration of the present invention and the resulting effects thereof will be more clearly understood by the following detailed description with reference to FIG. 2, which shows a preferred embodiment of the present invention.
도 2a는 샘플 제작 과정 전의 온전한 웨이퍼의 단면을 나타내며, 빗금 친 영역(20)은 분석할 영역이다. 도 2b는 분석할 영역을 식각하는 것으로 노즐에서 미소 입자의 식각액이 필요한 영역을 식각한다. (21)은 식각액이 나오는 노즐을 의미하며, (22)는 분무장치에 의해 기체화된 식각용액을 의미한다. 도 2c는 도 2a와 도 2b의 식각 방법을 포함한 자동화 식각장비이다. 노즐(21)은 웨이퍼(23)상의 소정의 분석할 영역을 식각하는데, 전후 상하 이동이 가능하도록 자동 또는 수동 제어부를 구비하며, 이에 따라 필요한 최소부위의 식각이 가능하다. 웨이퍼 고정부(24)는 상기 웨이퍼를 고정하며, (23)은 얇은 판 모양을 가진 웨이퍼를 의미한다. 그리고, 제어부(25)는 식각에 필요한 식각용액을 제공하는데, 노즐의 움직임 및 식각용액을 조정한다. 여기서, 상압 화학 기상 증착(Atomospheric Pressure CVD) 산화물, 열산화물(Thermal Oxide), 질화물(Nitride) 막질, 금속 막질 등을 식각할 수 있으며, 금속 막질은 알루미늄, 구리, 티타늄 또는 주석 등을 사용할 수 있다.2A shows the cross-section of the intact wafer before the sample fabrication process, with the shaded area 20 being the area to be analyzed. Figure 2b is to etch the area to be analyzed to etch a region in which the etching liquid of the fine particles in the nozzle. Reference numeral 21 denotes a nozzle from which the etching solution comes out, and reference numeral 22 denotes an etching solution gasified by a spray device. 2C is an automated etching apparatus including the etching method of FIGS. 2A and 2B. The nozzle 21 etches a predetermined area to be analyzed on the wafer 23, and includes an automatic or manual control unit for enabling forward and backward movement, and thus etching of a minimum portion required. The wafer fixing part 24 fixes the wafer, and 23 denotes a wafer having a thin plate shape. The controller 25 provides an etching solution for etching, and adjusts the movement of the nozzle and the etching solution. Here, the atmospheric pressure chemical vapor deposition (Atomospheric Pressure CVD) oxide, the thermal oxide (Thermal Oxide), nitride (Nitride) film, etc. can be etched, the metal film may be used, such as aluminum, copper, titanium or tin. .
따라서, 본 발명의 분사노즐을 이용한 극소영역 자동화 식각장치는 공정이 완료된 웨이퍼의 분석할 특정 영역만을 식각하여 분석할 최소의 칩만을 손상시킴으로써 고가의 웨이퍼를 보호하고 식각 손상영역을 제외하고는 웨이퍼 전체를 이용한 시험 및 불량분석 업무의 수행이 가능한 효과가 있다.Therefore, the micro-area automated etching apparatus using the spray nozzle of the present invention protects the expensive wafer by etching only a specific area to be analyzed and damaging only the minimum chip to be analyzed, and the entire wafer except the etching damage area. There is an effect that can perform the test and failure analysis work using.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0006295A KR100465532B1 (en) | 2003-01-30 | 2003-01-30 | Automated etch tool for small area using blast nozzle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0006295A KR100465532B1 (en) | 2003-01-30 | 2003-01-30 | Automated etch tool for small area using blast nozzle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040069756A KR20040069756A (en) | 2004-08-06 |
| KR100465532B1 true KR100465532B1 (en) | 2005-01-13 |
Family
ID=37358440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-0006295A KR100465532B1 (en) | 2003-01-30 | 2003-01-30 | Automated etch tool for small area using blast nozzle |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100465532B1 (en) |
-
2003
- 2003-01-30 KR KR10-2003-0006295A patent/KR100465532B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040069756A (en) | 2004-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9768014B2 (en) | Wafer coating | |
| US6268608B1 (en) | Method and apparatus for selective in-situ etching of inter dielectric layers | |
| KR100984313B1 (en) | Plasma processing apparatus and driving method thereof | |
| US7654010B2 (en) | Substrate processing system, substrate processing method, and storage medium | |
| US9130030B1 (en) | Baking tool for improved wafer coating process | |
| CN105810615A (en) | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator | |
| US20100050423A1 (en) | Apparatus and Method of Substrate to Substrate Bonding for Three Dimensional (3D) IC Interconnects | |
| US20150079790A1 (en) | Semiconductor device manufacturing method | |
| KR100465532B1 (en) | Automated etch tool for small area using blast nozzle | |
| WO2007109116A2 (en) | Street smart wafer breaking mechanism | |
| WO2006066100A2 (en) | Method and apparatus for laser dicing | |
| EP3043372B1 (en) | Method of modifying a sample surface layer from a microscopic sample | |
| US5468344A (en) | Method for manufacturing semiconductor devices | |
| JP3269678B2 (en) | Electrostatic chuck device and electrostatic chuck method | |
| US20220181142A1 (en) | Methods and apparatus for processing a substrate | |
| JP5294816B2 (en) | Suction-type local microplasma etching apparatus with microscope and local microplasma etching method | |
| US9953887B2 (en) | Measuring individual layer thickness during multi-layer deposition semiconductor processing | |
| CN217691107U (en) | Semiconductor processing device | |
| EP1612836A2 (en) | Method for the removal of a microscopic sample from a substrate | |
| CN117059544A (en) | Semiconductor processing device | |
| JPH10229107A (en) | Semiconductor analysis device | |
| EP3667713A1 (en) | Plasma chemical processing of wafer dies | |
| KR20210074999A (en) | A semiconductor wafer dicing process | |
| KR20230153715A (en) | Device of fabricating specimen for transmission electron microscope | |
| KR20030087334A (en) | Clamping apparatus of wafer and methdo for manufacturing semiconductor device thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080930 Year of fee payment: 5 |
|
| LAPS | Lapse due to unpaid annual fee |