KR100455644B1 - X-ray generating apparatus and inspection apparatus using the x-ray - Google Patents

Abstract

An X-ray generator and an X-ray inspection apparatus having the same are disclosed.

In the X-ray generator according to the present invention, an electron beam movement path for maintaining a vacuum state is formed therein, a body portion having an opening on one side thereof, and a first X-ray having a predetermined spot size in response to an incident electron beam. A first target, a second target fixed to the rear surface of the first target to generate a second X-ray expanded than the spot size, and a predetermined spot size fixed to the rear surface of the second target and smaller than the spot size of the second X-ray; A third target configured to generate a third X-ray, a target portion configured to close the opening of the body to maintain the electron beam movement path in a vacuum state, and installed inside the electron beam movement path facing the target portion, the electron beam A field radial electron gun for generating an electron beam in the moving passage, and the electron beam generated by the field radial electron gun is bent Electron beam bending means provided around the electron beam movement path to adjust the shape of the spot of the electron beam incident on the first target of the target portion, secondary electrons and backscattered electrons generated by the reaction of the electron beam scanned on the first target of the target portion And a first detector configured to generate an electrical signal corresponding to the surface image of the first target, wherein the X-ray inspection apparatus includes: a process chamber in which an analyte entrance door is formed at one side; An X-ray generator installed above the process chamber; A second detector installed at an upper portion of the process chamber around the X-ray generator and capable of qualitatively and quantitatively analyzing impurities present on the surface of the analyte by analyzing incident X-rays; An analyte holder installed inside the process chamber below the X-ray generator; And X-ray detecting means installed in the process chamber below the analyte holder.

Therefore, by using X-rays with a very small spot size, impurities present on the surface of an analyte such as a semiconductor device having a fine line width can be qualitatively and quantitatively analyzed, and the inside of the analyte can be analyzed by non-destructive method. It has an effect.

Description

X-ray generating apparatus and X-ray inspection apparatus having same {X-ray generating apparatus and inspection apparatus using the x-ray}

The present invention relates to an X-ray generator and an X-ray inspection apparatus having the same, and more specifically, it is possible to take a cross-section of an analyte by generating a spot size controlled X-ray, and present on the inside and surface of the analyte. The present invention relates to an X-ray generator capable of qualitatively and quantitatively analyzing impurities and an X-ray inspection apparatus having the same.

Recently, as semiconductor devices are highly integrated with 256MDRAM, 1GDRAM, etc., the number of layers stacked on a semiconductor substrate increases, the size of the circuit dimension becomes smaller, and the signal-to-response speed becomes faster.

In addition, the semiconductor device manufacturing process requires high precision and uniformity, and in order to respond to the demands for the precision and uniformity, the stacked layer surface and the inner surface are photographed and analyzed by performing an inspection process during the semiconductor unit manufacturing process.

The inspection process for the stacked layer surface and the inner surface is performed using a measuring device such as a scanning electron microscope and a transmission electron microscope.

In the inspection process using the scanning electron microscope, an electron gun of the scanning electron microscope generates an electron beam having high energy in a high vacuum state and scans it on the wafer to be analyzed. In this case, the electron beam scanned on the surface of the wafer to be reacted reacts with atoms on the surface of the semiconductor substrate to generate backscattered electrons, secondary electrons, and X-rays.

The back scattering electrons, the secondary electrons, and the secondary electrons in the X-rays are detected by a detector, and the detector transmits an image of the wafer surface according to the detection amount of the secondary electrons as an electric signal to the monitor. The monitor then displays the three-dimensional image of the wafer surface in contrast.

However, the inspection process using the scanning electron microscope can only observe the surface of the wafer to be analyzed, and there is a problem that cannot be analyzed inside the wafer to be analyzed.

When analyzing the inside of the wafer to be analyzed, after cutting the wafer to be analyzed to prepare a sample, the cross section of the sample may be analyzed by scanning an electron beam on the cross section of the sample.

In addition, a transmission electron microscope was used to analyze the inner surface of an analyte such as a semiconductor wafer or a flat panel display panel.

In the inspection process using the transmission electron microscope, an electron gun of the transmission electron microscope generates an electron beam having a high energy in a high vacuum state and scans on a very thinly cut sample so that the electron beam can be transmitted.

In this case, the electron beam scanned on the sample surface generates backscattered electrons, secondary electrons, X-rays, and the like by reaction with the target atoms.

In addition, some electron beams pass through a sample prepared to be thinly cut and are scanned on a screen on which phosphorus (P) is coated on a surface to generate light.

In addition, the detector detects the light and transmits an image of the sample surface corresponding to the light intensity to the monitor as an electric signal, thereby displaying a two-dimensional image of the sample on the monitor.

However, the scanning electron microscope and the transmission electron microscope have to be provided with a vacuum pump for forming a high vacuum in the electron gun for generating an electron beam to increase the size of the inspection equipment, high operating cost of the equipment due to the operation of the vacuum pump, There was a problem that takes a long time to initialize the test equipment.

In addition, the scanning electron microscope and the transmission electron microscope scan the electron beam on the wafer or sample to be analyzed, and thus the wafer or sample to be analyzed is electrically impacted by the electron beam, thereby causing the electrical analysis of the analyte, such as the semiconductor wafer and the sample to be analyzed. There was a problem of changing the characteristics.

That is, since the electron beam is a flow of electrons that are negatively charged, a problem arises in that when the electron beam is scanned on the analyte, the electron beam is aligned and electrically impacted.

In addition, the inspection process using the transmission electron microscope, the sample to be produced by cutting the analyte to destroy the sample, there is a problem that not only causes loss time (Loss time) caused by the sample production but also increase the manufacturing cost.

In addition, a printed circuit board (PCB) on which a semiconductor chip manufactured by a semiconductor device manufacturing process is currently mounted is subjected to cross-sectional analysis using a PCB inspection apparatus using X-rays.

Here, the PCB inspection apparatus using the X-ray, after fixing the sample to be analyzed, the X-ray generator scans the X-rays on the sample while changing its position by rotation on the upper portion of the sample.

At this time, the X-ray generator applies a voltage from several KeV to several hundred thousand eV to the pointed tip of the tungsten filament material of the electron gun and heats the tip sufficiently by 2,700 ° C. or more to generate hot electrons, and the hot electrons collide with the target. Energy is applied to the nucleus of the target material to generate X-rays by interaction with electrons rotating around the nucleus.

The X-ray detector provided at the lower part of the sample changes its position by rotation in conjunction with the X-ray generator, and detects the X-rays passing through the feed and analyzes the cross section of the sample.

However, the PCB inspection apparatus using the X-ray, the X-ray generator and the X-ray detector must be rotated by a mechanical device, the appearance of the inspection device is increased according to the provision of a mechanical device for the rotation of the X-ray generator and the X-ray detector is increased The occupied area inside the analysis room increases, and there is an excessive problem of energy consumption due to the operation of the equipment.

In addition, the X-ray generator of the PCB inspection apparatus using the X-ray, an acceleration voltage generator for generating more X-rays to accelerate to a large energy, equipment control device, and various auxiliary devices for preventing the generated X-rays leak There was a necessary problem.

In addition, since the spot size of the generated X-rays cannot be adjusted very small, there is a problem that cannot be used for analysis of highly integrated semiconductor devices.

Disclosure of Invention An object of the present invention is to provide an X-ray generator capable of generating X-rays for analyzing an analyte without providing a high vacuum pump and an X-ray inspection apparatus having the same.

Another object of the present invention is to provide an X-ray generator capable of analyzing a highly integrated semiconductor device and the like by adjusting the spot size of the X-ray, and an X-ray inspection apparatus having the same.

Still another object of the present invention is to provide an X-ray inspection apparatus capable of preventing an analyte from being electrically shocked.

Still another object of the present invention is to provide an X-ray inspection apparatus capable of analyzing an analyte in a stacked structure in a non-destructive manner.

Still another object of the present invention is to provide an X-ray inspection apparatus which has a small occupied area, small energy consumption according to equipment driving, and can simplify an accessory device.

1 is a block diagram of an X-ray generator according to an embodiment of the present invention.

FIG. 2 is a perspective view of the electrostatic lens shown in FIG.

3 is a perspective view of a general magnetic lens.

4 is a plan view of the deflection coil shown in FIG.

5 is a view for explaining the operation of the target shown in FIG.

6 is a block diagram of an X-ray inspection apparatus according to an embodiment of the present invention.

FIG. 7 is a diagram for describing a method of detecting a cross-sectional image of an analysis target by using an X-ray inspection apparatus according to an exemplary embodiment.

<Explanation of symbols for the main parts of the drawings>

2 X-ray generator 4 X-ray inspection device

10: body 12: tip

14 electric field radial electron gun 16 electron beam movement path

18: electrostatic field lens 20: deflection coil

22: first detector 24: first target

26: second target 28: third target

30: target portion 32: cylinder

34, 40: coil 36: power

38: Intercept 50: Process Chamber

52: X-ray receiving tube 54: Second detector

56 holder 58 wafer

60: door 62: vacuum line

64: vacuum pump 66: CCD camera

68: piston 70: drive source

72: robot arm 74: loader

76: cassette 80: electron beam

82: CuKα X-ray 84: BeKα X-ray

86: first electrode 88: second electrode

An X-ray generating apparatus according to the present invention for achieving the above object is, the electron beam movement path is maintained therein is maintained in a vacuum state, the body portion formed with an opening in one side; A first target that reacts with an incident electron beam to generate a first X-ray of a predetermined spot size, a second target that is fixed to a rear surface of the first target to generate a second X-ray expanded than the spot size, and the second target rear surface A third target fixed to the third target to generate a third X-ray having a predetermined spot size smaller than the spot size of the second X-ray, and closing the opening of the body to maintain the electron beam movement path in a vacuum state ; A field emission gun installed inside the electron beam moving path facing the target unit to generate an electron beam in the electron beam moving path; Electron beam bending means installed at the periphery of the electron beam movement path to bend the electron beam generated by the field emission electron gun to adjust the shape of the spot of the electron beam incident on the first target of the target portion; And a first detector configured to detect secondary electrons and backscattered electrons generated by the reaction of the electron beam scanned by the first target of the target unit and to generate an electric signal corresponding to the surface image of the first target. Characterized in that made.

Herein, the electron beam bending means may perform the second bending of the magnetic beam installed by the magnetic lens and the magnetic lens installed at the periphery of the electron beam moving passage so as to first bend the electron beam generated by the field emission electron gun. It may be made of a deflection coil installed around the moving passage.

The electron beam bending means is configured to secondaryly bend the electron beam firstly bent by the electrostatic lens and the electrostatic lens installed in the periphery of the electron beam movement path to firstly bend the electron beam generated by the field emission electron gun. It may be made of a deflection coil installed around the electron beam movement passage.

In addition, the first target is made of one of copper (Cu), rubidium (Rh), molybdenum (Mo), tungsten (W) and platinum (Pt) and chromium (Cr), and the second target Silver may be made of beryllium (Be) material, and the third target may be made of aluminum (Al).

The first to third targets may have a thickness of 0.01 μm to 50 μm, and the first to third targets may have a disc shape having a diameter of 1 mm to 100 mm.

In addition, the X-ray inspection apparatus according to the present invention, the process chamber formed in one side door for the analysis object entrance; An X-ray generator installed above the process chamber; A second detector installed at an upper portion of the process chamber around the X-ray generator and capable of qualitatively and quantitatively analyzing impurities present on the surface of the analyte by analyzing incident X-rays; An analyte holder installed inside the process chamber below the X-ray generator; And X-ray detecting means installed in the process chamber below the analyte holder.

Here, the second detector may be made of X-Ray Flourescence Spectrometry (XRF), and the X-ray detecting means may be made of a CCD camera capable of moving up and down by vertical movement of the piston by driving of a driving source.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram of an X-ray generator according to an embodiment of the present invention.

X-ray generator 2 according to the present invention, as shown in Figure 1, the electric field radial type that can scan the electron beam (Electron beam) inside the electron beam movement passage 16 in a vacuum state formed in the body portion 10 A field emission gun (14) is provided.

Here, the field emission electron gun 14 includes a tip 12 coated with zirconium oxide (ZrO) on a surface of a tungsten (W) single crystal having a direction of (1,0,0).

The tip 12 forms a strong electric field by applying a high voltage potential difference, and is heated to a temperature of about 1,800 ° C. to emit an electron beam.

In addition, the field radial electron gun 14 emits an electron beam at a temperature of about 1,800 ° C., which is significantly lower than a thermal electron gun that emits an electron beam at a temperature of about 2,800 ° C., thereby moving the electron beam by the thermo electron gun. Falls below the emitted electron beam.

However, the zirconium oxide (ZrO) coated on the surface of the tip 12 lowers the potential barrier required to protrude from the tip 12 to the outside by the so-called Schottky effect. Tip 20 may emit an electron beam about 500 times more than a thermoelectron gun.

Therefore, the number of photons of X-rays generated in the target unit is increased by at least several hundred times by the same acceleration voltage, and various problems caused by increasing the acceleration voltage of the thermo electron gun can be solved.

In addition, an electrostatic field lens 18 is provided at the periphery of the electron beam movement path 16 adjacent to the field emission electron gun 14 to firstly bend the electron beam emitted from the field emission electron gun 14.

Here, the electrostatic field lens 18 is a cylindrical first electrode by forming an electric field by giving a potential difference to the pair of cylindrical first electrode 86 and the second electrode 88 spaced apart from each other, as shown in FIG. The electron beam passing through the inside of the 86 and the second electrode 88 can be bent by the electric field.

In addition, the electron beam may be replaced with a magnetic lens in place of the electrostatic lens 18 as the primary bending means.

At this time, the magnetic lens is applied to the coil 34 wound around the cylinder 32, as shown in Figure 3 by applying a high power from the power source 36 to form an electric field to move the electron beam moving into the interior of the cylinder 32 It performs the function to make the first bend by.

In addition, the deflection coil 20 is bent by the electrostatic lens 18 around the electron beam moving path 16 adjacent to the electrostatic lens 18 so as to bend the electron beam passing through the inside at a predetermined angle. It is installed.

Here, the deflection coil 20 is a power source (not shown) by selectively applying a high power to the coil 38 wound around a plurality of segments 38 provided radially spaced apart as shown in FIG. By generating an electric field, the electron beam passing through the radial fragment 38 is bent at a predetermined angle by the electric field so that the electron beam can be scanned to one point.

That is, the deflection coil 20 may adjust the incidence direction of the electron beam incident on the target portion 30 by adjusting the current of the coil 38 wound around the section, and as a result, the X-rays generated by the target portion 30 It is to perform a function to be scanned in a predetermined portion of the surface of the analyte.

In addition, a first detector 22 capable of detecting secondary electrons and backscattered electrons formed in the target part 30 is provided at the periphery of the electron beam movement path 16 adjacent to the deflection coil 20. .

Here, the first detector 22 detects the secondary electrons and the backscattered electrons and transmits the surface image of the target unit 30 according to the detection amount of the secondary electrons and the backscattered electrons to an external first monitor (not shown). It can be transmitted as a signal.

At this time, after monitoring the first monitor, the operator adjusts the degree of bending of the electron beam by appropriately adjusting the electrostatic lens 18 and the deflection coil 20 when the spot of the electron beam forms an ellipse. By forming a circle, the spot size of the electron beam can be reduced.

In addition, a target part 30 is provided at the end of the electron beam movement passage 16 around the first detector 22 to close the opening 25 to maintain the electron beam movement passage 16 in a vacuum state.

Here, the target portion 30 is a copper (Cu) first target 24 in direct contact with the electron beam movement passage 16 in the vacuum state, the beryllium (Billium) in contact with the front and rear surfaces of the second target 26 ( The second target 26 of the Be material and the third target 28 of the aluminum (Al) material having a front surface in contact with the rear surface of the second target 26 and the rear surface exposed to the atmospheric state are laminated.

Here, the first target 24 may be formed of any one material of rubidium (Rb), molybdenum (Mo), tungsten (W), platinum (Pt) and chromium (Cr) in addition to copper (Cu), Each of the targets 24, 26, and 28 has a thickness of about 0.01 μm to 50 μm, preferably, the first target 24 and the third target 28 are about 0.1 μm, and the second target 26 is formed. Is formed to a thickness of about 10㎛. Each of the targets 24, 26, 28 has a disk shape having a diameter of about 1 mm to 100 mm, preferably about 3 mm.

Therefore, when a high-voltage potential difference is applied to the tip 12 of the field radial electron gun 14, the tip 12 forms an electric field and generates an electron beam to emit the electron beam into the electron beam movement path 16. do.

In this case, the field radial electron gun 14 heats the filament to a high temperature so that the energy distribution of the electron beam generated from the thermal electron gun is higher than that of the thermal electron gun to allow free electrons to be released into the vacuum from the surface of the filament. Can be generated.

Next, the electron beam emitted into the electron beam movement path 16 by the field emission electron gun 14 is firstly bent by the electrostatic lens 18 provided around the electron beam movement path 16.

In this case, the electrostatic field lens 18 forms an electric field by applying a potential difference to the pair of cylindrical first electrodes 86 and the second electrode 88 to form the cylindrical first electrode 86 and the second electrode 88. The electron beam passing through the interior is firstly bent by the electric field.

The electron beam in the case of using the magnetic lens in place of the electrostatic lens 18 is a predetermined angle by an electric field formed by the high voltage applied to the coil 34 wound from the power source 36 to the cylinder 32. 1st bending

Subsequently, the primary bent electron beam is secondarily bent by the deflection coil 20 provided around the electron beam movement path 16.

In this case, the electron beam generates a electric field by selectively applying a high power to a coil 40 wound around the plurality of segments 38 installed radially spaced by a predetermined interval, thereby generating an electric field. 38) The electron beam passing through the inside is bent at a predetermined angle by the electric field.

Next, the electron beam bent second by the deflection coil 20 hits the first target 24 of the target portion 30.

In this case, a part of the electron beam incident on the surface of the first target 24 reacts with the first target 24 to generate backscattered electrons, secondary electrons, and the like, and the backscattered electrons and secondary electrons are formed on the first target 24. Is detected by the first detector 22.

The first detector 22 transmits the surface image of the first target 24 according to the detected amounts of the backscattered electrons and the secondary electrons to an external first monitor (not shown) as an electric signal.

In addition, the operator monitors the first monitor and the shape of the spot of the electron beam incident on the first target 24 is formed in an elliptical shape or the like, so that when the electron beam spot size is large, the electrostatic lens 18 and the deflection coil 20 are used. By appropriately adjusting the operation of), the shape of the electron beam spot is adjusted to a round shape to reduce the size of the electron beam spot.

As shown in FIG. 5, another part of the electron beam 80 incident on the first target 24 includes one electron of an inner track adjacent to the outermost track of copper Cu forming the first target 24. The CuKα X-ray 82 is generated by releasing the electrons and moving the electrons of the outermost orbit into the inner orbit. In this case, the spot size of the CuKα X-ray 82 is the same as the spot size of the incident electron beam 80.

In addition, the CuKα X-ray 82 generated by the first target 24 reaches the surface of the second target 26 of beryllium (Be), and then the spot size is expanded by the reaction, and includes the CuKα X-ray. BeK alpha X-rays 84 are generated.

In addition, the BeKα X-ray 84 including the CuKα X-rays generated by the second target 26 reaches the surface of the third target 28 made of aluminum (Al), and then the spot size is reduced again to form a BeKα X-ray. By filtering, only the CuKα X-rays 82 are emitted to the outside.

6 is a block diagram of an X-ray inspection apparatus according to an embodiment of the present invention.

As shown in FIG. 6, the X-ray inspection apparatus according to the present invention includes a process chamber 50 in which a door 60 to which an analyte enters and exits is installed at one side.

In addition, an X-ray generator 2 as illustrated in FIG. 1 is installed at an upper center of the process chamber 50, and a second detector 54 is disposed on an upper portion of the process chamber 50 adjacent to the X-ray generator 2. ) Is connected to the X-ray accommodation tube (52).

In this case, the second detector 54 is made of X-Ray Flourescence Spectrometry (XRF).

The second detector 54 detects characteristic X-rays introduced through the X-ray receiving tube 52 for each wavelength and qualitatively analyzes impurities present on the surface of the analyte according to the X-ray wavelengths. The intensity can be measured to quantitatively analyze impurities present on the surface of the analyte.

In addition, a holder 56 for supporting an analyte such as a wafer 58 is installed in the process chamber 50 under the X-ray generator 2 and the X-ray accommodation tube 52.

In addition, a lower portion of the process chamber 50 receives X-rays transmitted through the analyte positioned on the holder 56 to digitally store the intensity of the signal corresponding to the cross-sectional image of the analyte to an external second monitor (not shown). A CCD camera (Charge Coupled Device Camera: 66) for transmitting signals is installed.

At this time, the CCD camera 66 is able to move up and down in the shanghaidong of the piston 68 by the drive of the drive source 70 to adjust the magnification.

In addition, a vacuum line 62 connected to a vacuum pump 64 performing a pumping operation is formed at one side of the process chamber 50 to adjust the internal pressure of the process chamber 50.

In addition, the outside of the door 60 of the process chamber 50, the wafer 58 loaded in the cassette 76 located in the loader (74) is held and brought into the holder 56, the wafer on the holder 56 The robot arm 72 which carries out 58 is provided.

Therefore, the robot arm 72 catches one wafer 58 of the plurality of wafers 58 loaded on the cassette 76 and transfers it to the holder 56 through the open door 60.

Next, when the door 60 is closed, as the vacuum pump 64 is operated, the internal gas of the process chamber 64 is forcibly pumped to the outside through the vacuum line 62 so that the process chamber 50 is predetermined. Vacuum state is formed.

Next, the CCD camera 66 is moved to a predetermined position by moving the piston 68 by the drive of the drive source 70.

Subsequently, the X-ray generator 2 according to the present invention generates CuKα X-rays and scans the predetermined portion of the surface of the wafer 58 located on the holder 56.

At this time, the CuKα X-rays penetrate the wafer 58 to the analyte and enter the CCD camera 66. The CCD camera 66 receives the X-ray signal passing through the wafer 58 to receive the wafer 58. The intensity of the signal corresponding to the cross-sectional image is transmitted to the second monitor so that the operator can analyze the cross-sectional image of the wafer.

In particular, as shown in FIG. 6, by appropriately adjusting the electrostatic lens 18 and the deflection coil 20 of the X-ray generator 2, the incident position of the surface of the wafer 58 of the CuKα X-ray is adjusted to control the CCD at different positions. The camera 66 may synthesize a two-dimensional cross-sectional image of the wafer 58 passing through the wafer 58 to generate a three-dimensional cross-sectional image.

That is, the CuKα X-rays detected at a plurality of positions can be detected to synthesize a cross-sectional image of the two-dimensional wafer 58 to generate a three-dimensional cross-sectional image.

In the X-ray generator 2 according to the present invention, a part of the CuKα X-rays scanned on the surface of the wafer 58 reacts on the surface of the wafer 58 to form X-rays different from the CuKα X-rays, which are formed through the X-ray receiving tube 52. Is incident on the second detector 54.

In this case, the second detector 54 selectively detects X-rays introduced through the X-ray receiving tube 52 for each wavelength, and qualitatively analyzes impurities present on the surface of the wafer 58 according to the X-ray wavelengths. The impurities are analyzed quantitatively according to the intensity.

In addition, the impurities present on the inner surface of the wafer 58 can also be inspected by adjusting the incident energy of the CuKα X-ray incident on the wafer 58 and scanning the CuKα X-ray on the inner surface of the wafer 58 having a layered structure.

According to the present invention, the X-ray generator is not provided with a separate vacuum pump because the internal pressure of the electron beam movement passage in the body portion is initially maintained to maintain a vacuum state.

Therefore, it is possible to reduce the size of the equipment, to reduce the operating cost of the equipment due to the operation of the vacuum pump, there is an effect that can reduce the time required for the initialization of the equipment for forming the vacuum.

In addition, by scanning the X-rays on the surface of the analyte, the analyte may be electrically shocked to prevent deterioration of electrical characteristics.

In addition, since the analysis object can be directly analyzed in a non-destructive manner by omitting a separate sample manufacturing process, it is possible to suppress the occurrence of loss time due to the sample preparation and to reduce the sample preparation cost.

In addition, since the spot size of the X-rays can be adjusted, the present invention can not only qualitatively and quantitatively analyze impurities present in the microwire width, such as contact holes of highly integrated semiconductor devices, but also analyze the cross-section of the analyte.

In addition, since a larger amount of X-rays may be generated without increasing the acceleration voltage by using the field emission electron gun, there is an effect of solving the problems caused by the acceleration voltage increase.

In addition, the X-ray inspection apparatus according to the present invention is not equipped with an accelerating voltage generator for generating more X-rays, a device control device, and various auxiliary devices for preventing leakage of the generated X-rays. This can reduce the size of the analysis room.

In addition, the X-ray inspection apparatus according to the present invention, by bending the electron beam incident on the target portion using the electrostatic lens or the magnetic lens and the deflection coil to adjust the X-ray incident point incident on the analysis target, so It is effective to analyze the shape.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.

Claims (13)

An electron beam bending path for generating an electron beam in a body portion having an electron beam movement path formed therein and having an opening at one side thereof, an electron beam bending means for bending an electron beam generated from the field radiation electron gun, and the electron beam bending means A target portion including a first target incident on an electron beam to generate a first X-ray having a predetermined spot size, a second target fixed to a rear surface of the first target to generate a second X-ray expanded than the spot size, and the target portion X-ray generation in which a first detector for detecting secondary electrons and backscattered electrons generated by a reaction of an electron beam scanned on a negative first target and generating an electrical signal corresponding to the surface image of the first target is installed In the apparatus, The target part includes a third target fixed to a rear surface of the second target to generate a third X-ray having a predetermined spot size smaller than the spot size of the second X-ray, and closing the opening of the body to allow the electron beam movement passage. X-ray generator, characterized in that configured to maintain a vacuum state. The X-ray generator of claim 1, wherein the third target is made of aluminum (Al). The X-ray generator of claim 1, wherein the third target has a thickness of 0.01 μm. The X-ray generator of claim 3, wherein the first to third targets have a disk shape having a diameter of about 1 mm to about 100 mm. delete delete delete delete delete delete delete delete delete