KR100453362B1 - Apparatus for thin film transistor liquid crystal display - Google Patents
Apparatus for thin film transistor liquid crystal display Download PDFInfo
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- KR100453362B1 KR100453362B1 KR10-2001-0054525A KR20010054525A KR100453362B1 KR 100453362 B1 KR100453362 B1 KR 100453362B1 KR 20010054525 A KR20010054525 A KR 20010054525A KR 100453362 B1 KR100453362 B1 KR 100453362B1
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- thin film
- film transistor
- display unit
- pixel
- pixel electrode
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- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910017141 AlTa Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 229920003002 synthetic resin Polymers 0.000 claims description 2
- 239000000057 synthetic resin Substances 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Abstract
본 발명은 박막트랜지스터 액정표시장치를 개시한다. 개시된 본 발명의 박막트랜지스터 액정표시장치는, 스위칭부와 화면표시부로 분활된 기판과, 상기 스위칭부 상에 상기 화면표시부의 각 화소에 대응하여 배치된 박막트랜지스터 집적칩과, 상기 화면표시부의 각 화소 내에 형성된 화소전극과, 상기 기판 화소표시부 상에 형성되며, 각 화소전극을 노출시키는 비아홀들이 형성된 절연막과, 상기 각 박막트랜지스터 집적칩으로부터 화면표시부로 신장되면서 비아홀을 통해 대응하는 각 화소전극과 전기적으로 접속되는 배선을 포함하여 구성되는 것을 특징으로 한다. 본 발명에 따르면, 박막트랜지스터를 별도로 제조된 고밀도 칩에 집적시키고 기판에는 화소전극과 배선만이 배치되므로, 상기 박막트랜지스터를 형성함에 기인하는 공정상의 번거로움을 해결할 수 있으며, 또한, 이론적으로 100%에 가까운 개구율을 실현할 수 있어 화면품위를 향상시킬 수 있다.The present invention discloses a thin film transistor liquid crystal display device. The disclosed thin film transistor liquid crystal display device includes a substrate divided into a switching unit and a screen display unit, a thin film transistor integrated chip disposed on the switching unit corresponding to each pixel of the screen display unit, and each pixel of the screen display unit. A pixel electrode formed therein, an insulating film formed on the substrate pixel display unit, and having via holes exposing the pixel electrodes, and extending from the thin film transistor integrated chip to the screen display unit and electrically connected to each pixel electrode through the via hole. It is characterized by including the wiring to be connected. According to the present invention, since the thin film transistor is integrated into a separately manufactured high density chip and only the pixel electrode and the wiring are disposed on the substrate, the process trouble caused by forming the thin film transistor can be solved, and theoretically 100% The aperture ratio close to can be realized and the screen quality can be improved.
Description
본 발명은 박막트랜지스터 액정표시장치에 관한 것으로, 특히 화소전극과 박막트랜지스터가 분리 배치되어 있어 개구율과 화면품위를 향상시킬 수 있는 박막트랜지스터 액정표시장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor liquid crystal display device, and more particularly, to a thin film transistor liquid crystal display device in which a pixel electrode and a thin film transistor are disposed separately to improve aperture ratio and screen quality.
박막트랜지스터 액정표시장치(TFT LCD)는 기존의 음극선관(CRT)을 대체하여 그 응용분야가 점점 넓혀져 가고 있는 디스플레이(Display) 기기로서, 도 1에 도시된 바와 같이, 기판(1)상에 수평방향으로 신장되는 게이트 버스 라인(2)과 공통 라인(3), 수직방향으로 신장되는 데이터 버스 라인(4), 스위칭 소자인 박막트랜지스터(5), 비아홀(6)에 의해 상기 박막트랜지스터(5)와 콘택되는 화소전극(7)을 포함하여 구성되어 있다.The TFT LCD is a display device, which is gradually expanding its application field in place of a conventional cathode ray tube (CRT), as shown in FIG. 1, on the substrate 1. The thin film transistor 5 is formed by a gate bus line 2 and a common line 3 extending in a horizontal direction, a data bus line 4 extending in a vertical direction, a thin film transistor 5 as a switching element, and a via hole 6. ) And a pixel electrode 7 in contact with it.
이와 같이 구성된 박막트랜지스터 액정표시장치는 풀 컬러(Full Color), 고정세 화면, 경량화 및 박형화 등의 우수한 특성을 지닌 것으로, 그 용도가 확대되어 가고 있다.The thin film transistor liquid crystal display device configured as described above has excellent characteristics such as full color, high definition screen, light weight, and thinness, and its use is expanding.
그러나, 종래 기술에 따른 박막트랜지스터 액정표시장치에 있어서는 다음과 같은 문제점이 있다.However, the liquid crystal display device according to the related art has the following problems.
종래 기술에 있어서는, 일반적으로 5 내지 7단계의 포토 마스크를 사용하여 박막트랜지스터 액정표시장치를 제조하게 되는데 마스크 공정 단계가 많을수록 그만큼 공정도 복잡하고 제조비가 상승하게 된다.In the prior art, a thin film transistor liquid crystal display device is generally manufactured using a photo mask having 5 to 7 steps. The more the mask process step, the more complicated the process and the higher the manufacturing cost.
그런데, 위의 5 내지 7 단계의 포토 마스크는 대부분 하부기판상의 박막트랜지스터를 제조하기 위해 사용되는데, 박막트랜지스터는 하부기판 전체 면적에서 극히 일부를 차지하므로 대부분의 박막트랜지스터 구성재료는 증착되었다가 식각액에 의해 제거된다. 즉, 화면을 구성하고 있는 것은 화소전극이지만, 실제로는 어레이 공정의 모든 재료와 공정이 박막트랜지스터를 제조하는데 사용된다는 것이다.However, the above 5 to 7 step photo masks are mostly used to fabricate the thin film transistors on the lower substrate. Since the thin film transistors occupy a very small part of the total area of the lower substrate, most of the thin film transistor components are deposited and then etched into the etching solution. Is removed by In other words, the screen constitutes a pixel electrode, but in reality, all materials and processes of the array process are used to manufacture the thin film transistor.
이에, 본 발명은 상기 종래 기술의 문제점을 해결하기 위하여 안출된 것으로, 박막트랜지스터 형성에 기인하는 공정상의 단점이 개선되도록 한 박막트랜지스터 액정표시장치를 제공함에 그 목적이 있다.또한, 본 발명은 화면표시부에는 화소전극 및 배선만이 설계되어 개구율 향상 및 그에 따라 화면품위가 향상되도록 한 박막트랜지스터 액정표시장치를 제공함에 그 다른 목적이 있다.Accordingly, an object of the present invention is to provide a thin film transistor liquid crystal display device in which the disadvantages of the process due to the formation of a thin film transistor can be improved. Another object of the present invention is to provide a thin film transistor liquid crystal display device in which only the pixel electrode and the wiring are designed in the display unit to improve the aperture ratio and thus the screen quality.
도 1은 종래 기술에 따른 박막트랜지스터 액정표시장치의 평면도.1 is a plan view of a thin film transistor liquid crystal display device according to the prior art.
도 2는 본 발명에 따른 박막트랜지스터 액정표시장치의 단면도.2 is a cross-sectional view of a thin film transistor liquid crystal display device according to the present invention;
도 3은 본 발명에 따른 박막트랜지스터 액정표시장치에 있어서, 배선 연결 구조의 확대단면도.3 is an enlarged cross-sectional view of a wiring connection structure in a thin film transistor liquid crystal display device according to the present invention;
도 4는 본 발명에 따른 박막트랜지스터 액정표시장치에 있어서, 화소전극에 관한 일실시예의 단면도.4 is a cross-sectional view of an embodiment of a pixel electrode in a thin film transistor liquid crystal display device according to the present invention;
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
10: 기판 20: 배선10: substrate 20: wiring
20a: 제1화소전극 배선 20b: 제2화소전극 배선20a: first pixel electrode wiring 20b: second pixel electrode wiring
20c: 제3화소전극 배선 30: 절연막20c: third pixel electrode wiring 30: insulating film
40: 비아홀 40a: 제1화소전극 비아홀40: via hole 40a: first pixel electrode via hole
40b: 제2화소전극 비아홀 40c: 제3화소전극 비아홀40b: second pixel electrode via hole 40c: third pixel electrode via hole
50: 화소전극 50a: 제1화소전극50: pixel electrode 50a: first pixel electrode
50b: 제2화소전극 50c: 제3화소전극50b: second pixel electrode 50c: third pixel electrode
60: 박막트랜지스터 집적칩 70: 아웃 리드 본딩(OLB)60: thin film transistor integrated chip 70: out lead bonding (OLB)
상기 목적을 달성하기 위한 본 발명에 따른 박막트랜지스터 액정표시장치는, 스위칭부와 화면표시부로 분활된 기판; 상기 스위칭부 상에 상기 화면표시부의 각 화소에 대응하여 배치된 박막트랜지스터 집적칩; 상기 화면표시부의 각 화소 내에 형성된 화소전극; 상기 기판 화소표시부 상에 형성되며 각 화소전극을 노출시키는 비아홀들이 형성된 절연막; 및 상기 각 박막트랜지스터 집적칩으로부터 화면표시부로 신장되면서 비아홀을 통해 대응하는 각 화소전극과 전기적으로 접속되는 배선을 포함하여 구성되는 것을 특징으로 한다.According to an aspect of the present invention, a thin film transistor liquid crystal display device includes: a substrate divided into a switching unit and a screen display unit; A thin film transistor integrated chip disposed on the switching unit corresponding to each pixel of the screen display unit; A pixel electrode formed in each pixel of the screen display unit; An insulating layer formed on the substrate pixel display unit and having via holes exposing each pixel electrode; And wires extending from the thin film transistor integrated chips to the screen display unit and electrically connected to the corresponding pixel electrodes through the via holes.
(실시예)이하, 첨부된 도면에 의거하여 본 발명의 바람직한 실시예를 상세하게 설명하도록 한다.EXAMPLES Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 박막트랜지스터 액정표시장치의 단면도이고, 도 3은 본 발명에 따른 박막트랜지스터 액정표시장치에 있어서, 배선 연결 구조의 확대단면도이고, 도 4는 본 발명에 따른 박막트랜지스터 액정표시장치에 있어서, 화소전극에 관한 일실시예의 단면도이다.2 is a cross-sectional view of a thin film transistor liquid crystal display device according to the present invention, FIG. 3 is an enlarged cross-sectional view of a wiring connection structure in the thin film transistor liquid crystal display device according to the present invention, and FIG. 4 is a thin film transistor liquid crystal display according to the present invention. In the apparatus, a cross-sectional view of one embodiment of a pixel electrode is shown.
본 발명에 따른 박막트랜지스터 액정표시장치(Thin Film Transistor Liquid Crystal Display: 이하, TFT LCD)는, 도 2에 도시된 바와 같이, 기판(10)을 임의적으로 기능면을 기준으로 스위칭부(A) 및 화면표시부(B)로 나누어 볼 수 있다. 여기서, 상기 기판(10)상에는 박막트랜지스터가 배치되지 않으므로, 상기 기판(10)은 유리 이외에 합성수지 기타 유기물 재질로 구성될 수 있다.In the thin film transistor liquid crystal display (TFT LCD) according to the present invention, as shown in FIG. 2, the substrate 10 may optionally include a switching unit A and a functional surface. Can be divided into the screen display (B). In this case, since the thin film transistor is not disposed on the substrate 10, the substrate 10 may be made of synthetic resin or other organic material in addition to glass.
상기 스위칭부(A)는 후술하는 화면표시부(B)로 전기적 신호를 보내는 스위칭소자인 박막트랜지스터가 고밀도로 집적되어 있는 칩(60:Chip)이 배치되어 있다. 여기서, 상기 박막트랜지스터 집적칩(60)은 상기 기판(10)에, 예를 들어, 아웃리드본딩(Out Lead Bonding) 방식으로 결합되어 있다.The switching unit A is provided with a chip 60 in which a thin film transistor, which is a switching element that sends an electrical signal to the screen display unit B, described later, is densely integrated. Here, the thin film transistor integrated chip 60 is coupled to the substrate 10 by, for example, an out lead bonding method.
상기 화면표시부(B)는 각 박막트랜지스터 집적칩(60)으로부터 신장되는 다수개의 배선(20a)(20b)(20c)과, 각 배선(20a)(20b)(20c)과 이에 대응하는 각 화소전극(50a)(50b)(50c)을 전기적으로 접속되도록 하는 다수개의 비아홀(40a)(40b)(40c)과, 상기 비아홀(40a)(40b)(40c)이 형성된 절연막(30)과, 상기 절연막(30) 상의 각 화소에 형성되어 상기 비아홀(40a)(40b)(40c)을 통해 해당 배선(20a)(20b)(20c)과 전기적으로 접속되는 다수개의 화소전극(50a)(50b)(50c)이 형성되어 있다.The screen display unit B includes a plurality of wirings 20a, 20b, 20c extending from each thin film transistor integrated chip 60, each wiring 20a, 20b, 20c and corresponding pixel electrodes. A plurality of via holes 40a, 40b, 40c for electrically connecting the 50a, 50b, 50c, insulating film 30 on which the via holes 40a, 40b, 40c are formed, and the insulating film A plurality of pixel electrodes 50a, 50b, 50c formed in each pixel on the substrate 30 and electrically connected to the corresponding wirings 20a, 20b, and 20c through the via holes 40a, 40b, and 40c. ) Is formed.
여기서, 도 3에 도시된 바와 같이, 제1화소전극(50a)은 제1화소전극비아홀(40a)을 통하여 제1화소전극 배선(20a)과 전기적으로 접속되어 있어 상기 박막트랜지스터 집적칩(60)으로부터 전기적 신호를 받는다.As shown in FIG. 3, the first pixel electrode 50a is electrically connected to the first pixel electrode wiring 20a through the first pixel electrode via hole 40a, so that the thin film transistor integrated chip 60 may be formed. Receive electrical signals from
한편, 상기 박막트랜지스터 집적칩(60)은 그 내부에 상기 제1화소전극(50a)에 전기적 신호를 인가하는 TFT 1을 비롯한 다수의 TFT가 형성되어 있어, 상기한 바와 같이 상기 제1화소전극(50a)은 상기 박막트랜지스터 집적칩(60)내의 TFT 1로부터 전기적 신호를 인가받으며, 상기 제2화소전극(50b) 및 제3화소전극(50c)도 이와 같다.On the other hand, the thin film transistor integrated chip 60 has a plurality of TFTs including a TFT 1 for applying an electrical signal to the first pixel electrode 50a therein, and thus, the first pixel electrode ( 50a) receives an electrical signal from TFT 1 in the thin film transistor integrated chip 60, and the second pixel electrode 50b and the third pixel electrode 50c are the same.
한편, 상기 박막트랜지스터 집적칩(60)은 그 내부에 구동집적회로(Drive Integrated Circuit)가 내장되어 구동칩 작용도 겸할 수 있다. 또한, 상기 박막트랜지스터 집적칩(60)은 상기 기판(10)의 임의의 변에 배치되는데, 화소수에 따라 4변 모두에 배치되어 있을 수 있다.On the other hand, the thin film transistor integrated chip 60 has a drive integrated circuit (Drive Integrated Circuit) is built therein may also act as a driving chip. In addition, the thin film transistor integrated chip 60 may be disposed on any side of the substrate 10, and may be disposed on all four sides according to the number of pixels.
상기 화소전극(50)은 고반사율 금속(반사형 LCD)으로 구성되어 있을 수 있고, 또는 고투과율 금속(투과형 LCD)으로 구성되어 있을 수 있다. 여기서, 상기 고반사율 금속의 예로는 Al, AlNd 또는 AlTa을 들 수 있으며, 상기 고투과율 금속의 예로는 인듐주석옥사이드(ITO) 또는 인듐아연옥사이드(IZO)를 들 수 있다.The pixel electrode 50 may be made of a high reflectivity metal (reflective LCD), or may be made of a high transmittance metal (transmissive LCD). Here, examples of the high reflectance metal may include Al, AlNd or AlTa, and examples of the high transmittance metal may include indium tin oxide (ITO) or indium zinc oxide (IZO).
또한, 화소전극(50)은, 도 4에 도시된 바와 같이, 그 일부는 고반사율 금속 전극(51)으로 구성되고, 나머지 일부는 고투과율 금속 전극(52)으로 구성될 수 있다. 이 경우, 도면에는 도시하지 않았지만, 기판간의 간격인 셀갭을 다르게 형성되어야 할 필요가 있을 수 있는데, 그러한 경우는 배선(20)을 반사형 화소전극(51) 영역에만 배치하면 용이하게 셀갭 차이를 둘 수 있다.In addition, as illustrated in FIG. 4, a part of the pixel electrode 50 may be configured of the high reflectivity metal electrode 51, and the other part of the pixel electrode 50 may be configured of the high transmittance metal electrode 52. In this case, although not shown in the drawings, it may be necessary to form different cell gaps, which are gaps between the substrates. In such a case, if the wiring 20 is disposed only in the reflective pixel electrode 51 region, the cell gaps are easily separated. Can be.
본 발명의 원리와 정신에 위배되지 않는 범위에서 여러 실시예는 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 자명할 뿐만 아니라 용이하게 실시할 수 있다. 따라서, 본원에 첨부된 특허청구범위는 이미 상술된 것에 한정되지 않으며, 하기 특허청구범위는 당해 발명에 내재되어 있는 특허성 있는 신규한 모든 사항을 포함하며, 아울러 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해서 균등하게 처리되는 모든 특징을 포함한다.Various embodiments can be easily implemented as well as self-explanatory to those skilled in the art without departing from the principles and spirit of the present invention. Accordingly, the claims appended hereto are not limited to those already described above, and the following claims are intended to cover all of the novel and patented matters inherent in the invention, and are also common in the art to which the invention pertains. Includes all features that are processed evenly by the knowledgeable.
이상에서 설명한 바와 같이, 본 발명에 따른 박막트랜지스터 액정표시장치에 있어서는 다음과 같은 효과가 있다.As described above, the thin film transistor liquid crystal display according to the present invention has the following effects.
본 발명에 있어서는, 박막트랜지스터를 별도로 제조된 고밀도 칩에 집적시키고 기판에는 화소전극과 배선만이 배치되므로 이론적으로 100%에 가까운 개구율을 실현할 수 있어 화면품위를 향상시킬 수 있는 효과가 있다.In the present invention, since the thin film transistor is integrated into a separately manufactured high density chip and only the pixel electrode and the wiring are disposed on the substrate, the aperture ratio can be theoretically close to 100%, thereby improving the screen quality.
또한, 박막트랜지스터와 화소전극이 별도로 배치되므로 원가절감과 불량률이 감소되는 효과가 있다.In addition, since the thin film transistor and the pixel electrode are separately disposed, cost reduction and a defective rate are reduced.
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