KR100444645B1 - Method for measuring total organic carbon content of wafer for semiconductor fabrication by using toc meter - Google Patents
Method for measuring total organic carbon content of wafer for semiconductor fabrication by using toc meter Download PDFInfo
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- KR100444645B1 KR100444645B1 KR1019970065035A KR19970065035A KR100444645B1 KR 100444645 B1 KR100444645 B1 KR 100444645B1 KR 1019970065035 A KR1019970065035 A KR 1019970065035A KR 19970065035 A KR19970065035 A KR 19970065035A KR 100444645 B1 KR100444645 B1 KR 100444645B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
Description
본 발명은 반도체장치 제조용 웨이퍼내 총유기탄소함량의 측정방법에 관한 것으로서, 보다 상세하게는 반도체장치 제조용 웨이퍼내에 존재하는 유기물을 질산을 사용하여 용출시키고, 이를 통상의 티오씨미터(TOC meter)를 사용하여 웨이퍼내 총유기탄소함량을 측정하는 측정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring the total organic carbon content in a wafer for manufacturing a semiconductor device, and more particularly, to elute organic matter present in the wafer for manufacturing a semiconductor device using nitric acid, and to dissolve the conventional thiometer. A method of measuring total organic carbon content in a wafer by using the same.
반도체장치의 제조에 있어서 수행되는 여러 가지 공정 중에는 세정공정과 같이 처리중의 웨이퍼가 상당한 시간 동안 물속에서 처리되는 경우가 많이 있으며, 단일공정으로서는 공기 이외에서 가장 많은 시간 동안 웨이퍼가 노출된 상태를 유지하게 된다.Among the various processes performed in the manufacture of semiconductor devices, the wafer being processed is often treated in water for a considerable time, such as a cleaning process. As a single process, the wafer is kept exposed for the most time other than air. Done.
순수나 초순수가 아닌 용수들 중에는 수용성광물, 불순물의 입자 및 박테리아 등의 오염물질이 상당히 용해 또는 분산되어 있기 때문에 그 자체로서 하나의 오염원이 될 수 있다.In waters that are not pure or ultrapure water, they can be themselves a source of contamination because contaminants such as water-soluble minerals, particles of impurities, and bacteria are solubilized or dispersed.
웨이퍼의 처리 중에 사용되는 물은 순수제조장치 등에 의하여 순수나 초순수 또는 탈이온수 등으로 고도로 정제되어 사용되어야만 하며, 일단 정제된 순수는 배관을 통하여 다른 오염원 등에 노출됨이 없이 순수가 사용되는 장소에까지 공급되어야 하며, 배관을 통하는 공급 중에도 오염의 정도를 항상 관리하여야 하며, 순수의 오염도를 관리하는 요소 중에 총유기탄소함량을 측정하기 위한 장치로서 티오씨미터(TOC meter)가 개발되어 사용되고 있다.The water used during the processing of the wafer should be highly purified and used as pure water, ultrapure water or deionized water by pure water manufacturing equipment, etc. Once purified water is supplied to the place where pure water is used without being exposed to other pollutants through pipes. In addition, the degree of pollution must always be maintained even during the supply through the pipe, and a thiometer (TOC meter) has been developed and used as a device for measuring the total organic carbon content among the elements that control the degree of pollution of pure water.
티오씨미터는 유수의 제조업자들에 의하여 제조되어 상용적으로 공급되는 것으로서, 당해 기술분야에서 통상의 지식을 갖는 자에게는 용이하게 구입하여 사용할 수 있을 정도로 공지된 것으로 이해될 수 있으며, 시료 중의 유기물을 총유기탄소함량으로 측정하여 이를 수치로 나타내도록 구성되어 있다.Thiocymeter is manufactured and supplied commercially by leading manufacturers, and can be understood to be well known to those skilled in the art that can be easily purchased and used, the organic matter in the sample It is configured to measure the total organic carbon content and to express it as a numerical value.
그러나, 이러한 종래의 티오씨미터의 경우, 순수 등과 같이 액상으로 존재하는 샘플에 대하여는 즉시 자동적으로 총유기탄소함량을 측정할 수 있으나, 반도체장치를 제조하는데 사용되는 고체상으로 되어 있는 웨이퍼에 대하여는 그 적용이 불가능하였으며, 웨이퍼내의 총유기탄소함량의 측정이 불가능하다는 단점이 있었다.However, in the case of the conventional thiocimeter, the total organic carbon content can be measured automatically and immediately for a sample present in the liquid phase such as pure water, but the application is for the wafer in the solid phase used to manufacture a semiconductor device. This was impossible, and there was a disadvantage that the measurement of the total organic carbon content in the wafer was impossible.
따라서, 웨이퍼내의 총유기탄소함량을 측정할 수 있는 새로운 측정방법이 필요하게 되었다.Therefore, there is a need for a new measuring method that can measure the total organic carbon content in a wafer.
본 발명의 목적은, 반도체장치 제조용 웨이퍼내 총유기탄소함량을 측정방법을 제공하는 데 있다.An object of the present invention is to provide a method for measuring the total organic carbon content in a wafer for manufacturing a semiconductor device.
상기 목적을 달성하기 위한 본 발명에 따른 반도체장치 제조용 웨이퍼내 총유기탄소함량의 측정방법은, 고체상의 웨이퍼를 질산에 침적시켜 웨이퍼로부터 유기물을 용출시킨 후, 용출된 유기물을 포함하는 질산을 티오씨미터에 도입하여 총유기탄소함량을 측정하는 것으로 이루어진다.A method for measuring the total organic carbon content in a wafer for manufacturing a semiconductor device according to the present invention for achieving the above object comprises depositing a solid wafer in nitric acid to elute organic matter from the wafer, and then dissolves nitric acid containing the eluted organic matter in TioC. It is introduced into the meter to measure the total organic carbon content.
이하, 본 발명을 구체적인 실시예를 참조하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to specific examples.
본 발명에 따른 반도체장치 제조용 웨이퍼내 총유기탄소함량의 측정방법은, 고체상의 웨이퍼를 질산에 침적시켜 웨이퍼로부터 유기물을 용출시키는 용출단계; 및 용출된 유기물을 포함하는 질산을 티오씨미터에 도입하여 총유기탄소함량을 측정하는 측정단계;로 이루어짐을 특징으로 한다.A method for measuring the total organic carbon content in a wafer for manufacturing a semiconductor device according to the present invention includes: an eluting step of depositing a solid wafer in nitric acid to elute organic matter from the wafer; And a measurement step of measuring the total organic carbon content by introducing nitric acid containing the eluted organic matter into the thiocimeter.
상기에서 유기물의 용출을 위하여 사용되는 질산(HNO3)은 유기물의 용출능력이 우수하면서도 티오씨미터에 직접적으로 적용이 가능한 것으로 확인되었으며, 이는 유기물의 용출능력이 우수한 황산(H2SO4)이 티오씨미터에 직접 적용될 수 없다는 점과 과산화수소수(H2O2)나 염산(HCl)이 티오씨미터에 적용이 가능하기는 하나, 유기물의 용출능력이 현저하게 떨어진다는 점을 고려할 때, 웨이퍼 중에 포함된 유기물을 용출시켜 직접 티오씨미터에 적용시킬 수 있는 용매로서 최적임을 확인하여 본 발명을 완성하게 되었다.The nitric acid (HNO 3 ) used for eluting the organic matter in the above was confirmed that the organic eluting ability is excellent, but can be directly applied to the thiometer, sulfuric acid (H 2 SO 4 ) is excellent Considering that it cannot be applied directly to thiometers and that hydrogen peroxide (H 2 O 2 ) or hydrochloric acid (HCl) can be applied to thiometers, the elution capacity of organic matters is considerably reduced. Elution of the organic matter contained therein was confirmed to be optimal as a solvent that can be directly applied to a thiometer, and thus, the present invention was completed.
상기 용출단계에서 웨이퍼의 침적에 사용되는 질산은 바람직하게는 10 내지 70%의 농도를 갖는 것이 사용될 수 있다.The nitric acid used for the deposition of the wafer in the elution step may preferably be used having a concentration of 10 to 70%.
또한, 상기 용출단계에서 웨이퍼의 침적시간은 바람직하게는 10 내지 30분이 될 수 있으며, 이는 웨이퍼의 침적에 사용되는 질산의 농도에 따라 반비례하여 변경될 수 있다.In addition, the deposition time of the wafer in the elution step may be preferably 10 to 30 minutes, which may be changed in inverse proportion to the concentration of nitric acid used for deposition of the wafer.
이하에서 본 발명의 바람직한 실시예 및 비교예들이 기술되어질 것이다.Hereinafter, preferred embodiments and comparative examples of the present invention will be described.
이하의 실시예들은 본 발명을 예증하기 위한 것으로서 본 발명의 범위를 국한시키는 것으로 이해되어져서는 안될 것이다.The following examples are intended to illustrate the invention and should not be understood as limiting the scope of the invention.
실시예 1 내지 4Examples 1-4
미합중국 소재 제이. 티. 베이커(J. T. Baker)사로부터 70%(실시예 1), 50%(실시예 2), 30%(실시예 3) 및 10%(실시예 4) 농도의 질산을 구입하여 6개의 샘플로 취한 후, 각 질산내에 원래 포함되어 있던 유기물을 일본국 소재 시마쯔(Simatz)사의 티오씨미터(모델명 ; TOC-5000)을 사용하여 총유기탄소함량을 매 샘플당 5회씩 총 30회의 측정을 수행하고, 결과치를 산술평균하였으며, 그 결과를 하기의 표 1에 나타내었다.Jay, United States of America. tea. 70% (Example 1), 50% (Example 2), 30% (Example 3) and 10% (Example 4) concentrations of nitric acid were purchased from JT Baker, and taken as six samples. Using the organic material originally contained in each nitric acid, a total organic carbon content was measured 30 times, 5 times per sample, using a thiometer (model name; TOC-5000) manufactured by Shimatz, Japan. The results were arithmetically averaged, and the results are shown in Table 1 below.
또, 동일한 샘플 20ml을 사용하여 유기물로 강제오염된 웨이퍼(8인치)를 침적시켜 웨이퍼로부터 유기물을 용출시키고, 용출된 유기물을 함유하는 질산을 그대로 상기 티오씨미터에 적용시켜 질산 중의 총유기탄소함량을 역시 매 샘플당 5회씩 총 30회의 측정을 수행하고, 결과치를 산술평균하였으며, 그 결과를 하기 표 2에 나타내었다.In addition, by using 20 ml of the same sample, a wafer (8 inches) that was forcibly contaminated with organic matter was deposited to elute organic matter from the wafer, and nitric acid containing the eluted organic matter was applied to the thiometer as it was. Was also performed a total of 30 measurements, 5 times per sample, the arithmetic average of the results, the results are shown in Table 2 below.
상기 표 1 및 표 2의 결과를 종합한 결과, 실시예 1(질산농도 70%)의 경우에서는, 침적전의 원래의 질산내의 총유기탄소함량이 높게 나타났으며, 침적후의 총유기탄소함량이 증가하는 것으로 나타나 유기물의 추출이 가능한 것으로 나타나기는 하였으나, 침적전과 침적후의 농도차가 크지 않아 분석결과에 대한 신뢰도가 낮게 평가될 수 밖에 없었으며, 실시예 2(질산농도 50%), 실시예 3(질산농도 30%) 및 실시예 4(질산농도 10%)들에 대해서는 침적전의 총유기탄소함량도 낮게 나타났으며, 침적전과 침적후의 농도차가 크게 나타났으며, 특히 실시예 2의 경우에서는 침적전과 침적후의 농도차가 가장 크게 나타남을 확인할 수 있었으며, 따라서 웨이퍼로부터의 유기물의 용출에는 50% 농도의 질산이 가장 효과적임을 확인할 수 있었다.As a result of the synthesis of the results of Table 1 and Table 2, in the case of Example 1 (nitrate concentration 70%), the total organic carbon content in the original nitric acid before deposition was high, and the total organic carbon content after deposition was increased. Although it was shown that the extraction of organic matter was possible, but the difference in concentration before and after deposition was not large, the reliability of the analysis was inevitably evaluated. Example 2 (nitrate concentration 50%), Example 3 (nitric acid) Concentration 30%) and Example 4 (nitrate concentration 10%), the total organic carbon content before deposition was also low, and the difference in concentration before and after deposition was large, especially in Example 2 before and after deposition It was confirmed that the later concentration difference was the largest, so that 50% of nitric acid was most effective for dissolution of organic matter from the wafer. Overload was confirmed.
실시예 5 내지 8Examples 5-8
상기 실시예 1 내지 4의 결과로부터 바람직한 결과를 나타내는 50% 질산(실시예 2)에 대하여 침적시간별로 5분(실시예 5), 10분(실시예 6), 20분(실시예 7) 및 30분(실시예 8)별로 역시 매 샘플당 5회씩 총 30회의 측정을 수행하고, 결과치를 산술평균하였으며, 그 결과를 하기 표 3에 나타내었다.5 minutes (Example 5), 10 minutes (Example 6), 20 minutes (Example 7) for 50% nitric acid (Example 2) showing preferable results from the results of Examples 1 to 4 by deposition time and A total of 30 measurements were also performed for each 30 minutes (Example 8) 5 times per sample, and the arithmetic average of the results was shown in Table 3 below.
상기 표 3에 나타난 바와 같이, 50%의 동일농도의 질산에 대하여도 침적시간별로 총유기탄소함량이 증가하는 것으로 나타났으나, 20분(실시예 7) 이상 침적시간을 증가시켜도 총유기탄소함량은 증가하지 않는 것으로 나타나 침적시간을 30분 이상 유지할 필요가 없으며, 10 내지 30분의 침적시간으로도 충분한 총유기탄소함량의 측정이 가능함을 확인할 수 있었다.As shown in Table 3, the total organic carbon content was also increased for the same concentration of nitric acid at each deposition time, but the total organic carbon content was increased even if the deposition time was increased for 20 minutes or more (Example 7). It does not appear to increase the deposition time does not need to maintain more than 30 minutes, it was confirmed that sufficient total organic carbon content can be measured with a deposition time of 10 to 30 minutes.
상기한 실시예들을 종합한 결과, 질산을 사용하여 웨이퍼내의 유기물을 용출시키고, 이를 티오씨미터에 직접 적용시켜 웨이퍼로부터 용출되는 총유기탄소함량을 측정함으로써 웨이퍼내의 유기물함량을 측정할 수 있는 기준의 설정이 가능하게 되었으며, 이를 바탕으로 웨이퍼의 효율적인 관리를 가능하게 할 수 있었다.As a result of the synthesis of the above embodiments, the organic matter in the wafer was eluted using nitric acid, and applied directly to a thiocimeter to measure the total organic carbon content eluted from the wafer. It was possible to set up, which enabled efficient wafer management.
따라서, 본 발명에 의하면 질산을 사용하여 웨이퍼내의 유기물함량을 총유기탄소함량으로 측정할 수 있도록 함으로써 보다 간단하고도 효과적인 웨이퍼의 오염관리를 가능하게 하는 효과가 있다.Therefore, according to the present invention, the organic matter content in the wafer can be measured by the total organic carbon content using nitric acid, thereby making it possible to more easily and effectively manage the contamination of the wafer.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
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| KR1019970065035A KR100444645B1 (en) | 1997-12-01 | 1997-12-01 | Method for measuring total organic carbon content of wafer for semiconductor fabrication by using toc meter |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100444645B1 (en) |
-
1997
- 1997-12-01 KR KR1019970065035A patent/KR100444645B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990046880A (en) | 1999-07-05 |
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