KR100436579B1 - PTC Device Manufacturing Method With Excellent Resistance Repair Specific Property And PTC Device Thereof - Google Patents
PTC Device Manufacturing Method With Excellent Resistance Repair Specific Property And PTC Device Thereof Download PDFInfo
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- KR100436579B1 KR100436579B1 KR10-2001-0069891A KR20010069891A KR100436579B1 KR 100436579 B1 KR100436579 B1 KR 100436579B1 KR 20010069891 A KR20010069891 A KR 20010069891A KR 100436579 B1 KR100436579 B1 KR 100436579B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/027—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/034—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
Abstract
본 발명은 저항복구 특성이 우수한 PTC 디바이스 제조방법 및 PTC 디바이스에 관한 것으로, 70 중량%의 저융점 수지와, 15 중량%의 중융점 수지 및 15 중량%의 고융점 수지로 이루어진 고분자 수지 100중량에 대해 DBP 수치가 100g당 100 내지 140㎤인 95 중량비의 카본블랙와, 0.5 중량비의 가교제 및 1중량비의 첨가제 및 10 중량비의 폴리에틸렌 왁스를 투입하여 PTC복합수지를 배합하는 단계와, 상기 PTC복합수지를 단축스크류 압출기로 135℃에서 시트형태로 압출하는 단계와, 상기 시트형태의 PTC복합수지의 양면에 니켈도금되어진 구리박판를 합착하는 단계와, 구리박판이 합착된 상기 PTC복합수지를 온도 220℃, 압력 200kgf/㎠에서 45분 동안 프레스로 가교한 뒤, 소정형상의 금형으로 펀칭하여 일정크기의 몸체를 형성하는 단계와, 상기 몸체의 양측에 솔더크림으로 전원연결을 위한 니켈 리드를 부착하고, 고온의 리플로우를 통과시킨 후 강제냉각시켜 결착하는 단계 및 전압 16V, 전류 100A의 전원을 5초동안 인가하여 트립한 뒤 자연냉각시켜 PTC 디바이스를 완성하는 단계로 이루어지는 것을 특징으로 한다. 아울러, 상기 PTC디바이스는 상기와 같은 공정별 단계를 거쳐 제조되는 것이 바람직하다.The present invention relates to a PTC device manufacturing method and a PTC device excellent in the resistance recovery characteristics, to a 100 weight of polymer resin consisting of 70% by weight of a low melting point resin, 15% by weight of a middle melting point resin and 15% by weight of a high melting point resin Blending PTC composite resin by adding 95 weight ratio of carbon black having a DBP value of 100 to 140 cm 3 per 100 g, 0.5 weight ratio of crosslinking agent and 1 weight ratio of additive, and 10 weight ratio of polyethylene wax, and shortening the PTC composite resin. Extruding in sheet form at 135 ° C. with a screw extruder, bonding the nickel plated copper foil to both sides of the sheet-shaped PTC composite resin, and the PTC composite resin bonded with the copper foil at a temperature of 220 ° C. and a pressure of 200 kgf. Crosslinking with a press for 45 minutes at / cm 2, and punching into a predetermined mold to form a body of a predetermined size, and soldering cream on both sides of the body. Attaching nickel lead for original connection, passing through high temperature reflow, forced cooling and binding, and applying power of voltage 16V, current 100A for 5 seconds, tripping, and then naturally cooling to complete PTC device Characterized in that consists of. In addition, the PTC device is preferably manufactured through the process-specific steps as described above.
Description
본 발명은 PTC복합수지를 기반으로 하는 PTC 디바이스를 제조하는 방법 및 이를 통해 제작되는 PTC 디바이스에 관한 것으로, 보다 상세하게는 추가적인 트립을 겪게 되더라도 저항상승이 거의 없도록 PTC 디바이스를 제조할 수 있는 저항복구 특성이 우수한 PTC 디바이스 제조방법 및 PTC 디바이스에 관한 것이다.The present invention relates to a method for manufacturing a PTC device based on a PTC composite resin, and to a PTC device manufactured through the same, and more particularly, a resistance recovery capable of manufacturing a PTC device such that there is almost no increase in resistance even if an additional trip occurs. A PTC device manufacturing method and PTC device excellent in the characteristic are provided.
기존의 배터리나 회로보호용으로 사용되는 PTC복합수지 제품의 가장 큰 문제점은 초기저항(R0)은 낮은데 전압 및 전류 인가 뒤 트립을 겪은 후 저항(R1)이 통상 100% 정도 상승하는 것이다. 이것은 제품의 사용 과정에서 전력 손실을 초래하며, 회로를 디자인하는데 있어서도 불안정성을 야기시킨다.The biggest problem with PTC composite resin products used to protect existing batteries or circuits is that the initial resistance (R0) is low, but the resistance (R1) typically rises about 100% after a trip after applying voltage and current. This results in power loss during product use and instability in circuit design.
이러한 저항 상승,이른바 'R1 jumping'의 원인은 여러가지가 있을 수 있다.첫째, 트립 후 수지의 모폴로지 변화인데 이는 트립 중 수지가 융점 근처에 도달하게 되고, 이 때 수지의 유동과 함께 카본블랙의 위치 이동으로 인해 저항이 상승할 수 있다. 또한, 트립 상태가 제거된 후 제품이 자연 냉각을 거치면서 제품 제조 과정과는 다른 냉각과정을 겪기 때문에 고분자 결정의 성장 경로의 차이로 인한 특성 변화에 기인한다.There are many reasons for this increase in resistance, so-called 'R1 jumping'. First, the morphology change of the resin after the trip, which causes the resin to reach near the melting point during the trip, at which point the position of the carbon black along with the flow of the resin The movement can cause the resistance to rise. In addition, since the product undergoes a natural cooling after the trip state is removed, the product undergoes a cooling process different from that of the product manufacturing process.
둘째, 금속 전극과 수지간 계면 저항의 상승이 원인일 것이다.라미네이션 공정이나 프레스 공정을 거치는 동안에 고온 고압에서 전극과 계면이 충분한 계면적을 가지고 잘 접착되어 낮은 계면 저항 상태를 유지하다가, 미가압상태인 제품 상태에서 트립을 겪게 되면 수지와 금속면을 결착시켜 줄 압력의 부재로 미세한 박리가 일어나 저항상승을 유발할 수 있으며, 또한 첫번째 원인에서와 마찬가지로 계면에 있는 수지의 모폴로지 변화는 저항 변화를 증폭시키는 문제점이 있다.Second, the increase in the interfacial resistance between the metal electrode and the resin may be caused by the electrode and the interface having sufficient interfacial surface at a high temperature and high pressure during the lamination process or the press process to maintain a low interfacial resistance state. If the product is tripped in the phosphorus state, a slight peeling may occur due to the absence of pressure that binds the resin and the metal surface, which may cause an increase in resistance. Also, as in the first cause, the morphology change of the resin at the interface amplifies the resistance change. There is a problem.
본 발명은 상기와 같은 문제점을 감안하여 안출된 것으로, 본 발명의 제 1목적은 추가적인 트립을 겪게 되더라도 저항상승이 거의 없도록 PTC디바이스를 제조할 수 있는 저항복구 특성이 우수한 PTC 디바이스 제조방법 및 PTC 디바이스를 제공하는 것이다.The present invention has been made in view of the above problems, and a first object of the present invention is a PTC device manufacturing method and a PTC device having excellent resistance recovery characteristics capable of manufacturing a PTC device such that there is almost no increase in resistance even if an additional trip occurs. To provide.
그리고 본 발명의 제 2목적은 PTC복합수지를 몸체로 하여 구리박판을 부착한 뒤, 리드선을 연결하고 소정전원의 인가상태에서 트립공정으로 마무리하여 저항복구 특성이 향상되어지도록 한 저항복구 특성이 우수한 PTC 디바이스 제조방법 및 PTC 디바이스를 제공하는 것이다.And the second object of the present invention is excellent resistance recovery characteristics to improve the resistance recovery characteristics by attaching a copper foil with a PTC composite resin as a body, connecting the lead wires and finishing the trip process in the state of applying a predetermined power source To provide a PTC device manufacturing method and a PTC device.
이러한 본 발명의 목적들은, 70 중량%의 저융점 수지와, 15 중량%의 중융점 수지 및 15 중량%의 고융점 수지로 이루어진 고분자 수지 100중량에 대해 DBP 수치가 100g당 100 내지 140㎤인 95 중량비의 카본블랙와, 0.5 중량비의 가교제 및 1중량비의 첨가제 및 10 중량비의 폴리에틸렌 왁스를 투입하여 PTC복합수지를 배합하는 단계(S100);The objects of the present invention are 95 having a DBP value of 100 to 140 cm 3 per 100 g based on 100 weight of polymer resin composed of 70 wt% low melting point resin, 15 wt% medium melting point resin and 15 wt% high melting point resin. Blending the PTC composite resin by adding carbon black in a weight ratio, 0.5 weight ratio of a crosslinking agent, 1 weight ratio of additives, and 10 weight ratio of polyethylene wax (S100);
상기 PTC복합수지를 단축스크류 압출기로 135℃에서 시트형태로 압출하는 단계(S200);Extruding the PTC composite resin into a sheet form at 135 ° C. using a single screw extruder (S200);
상기 시트형태의 PTC복합수지의 양측에 니켈도금되어진 구리박판(20)을 합착하는 단계(S300);Bonding the nickel plated copper foil 20 to both sides of the sheet-formed PTC composite resin (S300);
상기 구리박판(20)이 합착된 상기 PTC복합수지를 온도 220℃, 압력 200kgf/㎠에서 45분 동안 프레스로 가교한 뒤, 소정형상의 금형으로 펀칭하여 일정크기의 몸체(10)를 형성하는 단계(S400);Cross-linking the PTC composite resin bonded to the copper foil 20 by pressing at a temperature of 220 ° C. and a pressure of 200 kgf / cm 2 for 45 minutes, and then punching into a predetermined mold to form a body 10 having a predetermined size. (S400);
상기 몸체(10)의 양측에 솔더크림으로 전원연결을 위한 니켈 리드(30)를 부착하고, 고온의 리플로우를 통과시킨 후 강제냉각시켜 결착하는 단계(S500); 및Attaching the nickel lead 30 for power connection with solder cream on both sides of the body 10, passing the high temperature reflow, and forcibly cooling and binding (S500); And
전압 16V, 전류 100A의 전원을 5초 동안 인가하여 트립한 뒤, 자연냉각시켜PTC 디바이스(100)를 완성하는 단계(S600);로 이루어지는 것을 특징으로 하는 저항복구 특성이 우수한 PTC 디바이스 제조방법에 의하여 달성된다.By applying a power supply of a voltage of 16V, current 100A for 5 seconds to trip, and naturally cooling to complete the PTC device 100 (S600); by the PTC device manufacturing method having excellent resistance recovery characteristics Is achieved.
여기서, 상기 고융점수지는 HDPE(High Density Polyethylene), MDPE(Medium Density Polyethylene)를 포함하는 결정성 수지군으로 선택되는 어느 하나인 것이 바람직하다.Here, the high melting point resin is preferably any one selected from the group of crystalline resins including HDPE (High Density Polyethylene), MDPE (Medium Density Polyethylene).
또한, 상기 중융점수지는 LDPE(Low Density Polyethylene), LLDPE(Linear Low Density Polyethylene), 메탈로센 수지를 포함하는 결정성 수지군으로부터 선택되는 어느 하나인 것이 바람직하다.In addition, the middle melting point resin is preferably any one selected from the group of crystalline resins including low density polyethylene (LDPE), linear low density polyethylene (LLDPE), metallocene resin.
그리고, 상기 저융점수지는 EEA와 EAA의 혼합물 중에서 선택되는 에틸렌아크릴레이트 공중합체인 것이 바람직하다.The low melting point resin is preferably an ethylene acrylate copolymer selected from a mixture of EEA and EAA.
아울러, 본 발명의 상기와 같은 목적들은 상기 저항복구 특성이 우수한 PTC 디바이스 제조방법에 의해 제조되어지는 것을 특징으로 하는 저항복구 특성이 우수한 PTC 디바이스에 의하여 달성된다.In addition, the above object of the present invention is achieved by a PTC device excellent in the resistance recovery characteristics, characterized in that it is manufactured by the PTC device manufacturing method excellent in the resistance recovery characteristics.
본 발명의 그 밖의 목적, 특정한 장점들 및 신규한 특징들은 첨부된 도면들과 연관되어지는 이하의 상세한 설명과 바람직한 실시예들로부터 더욱 분명해질 것이다.Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description and the preferred embodiments associated with the accompanying drawings.
도 1은 본 발명에 따른 저항복구 특성이 우수한 PTC 디바이스 제조방법의 공정순서도,1 is a process flowchart of a method for manufacturing a PTC device having excellent resistance recovery characteristics according to the present invention;
도 2는 본 발명에 따른 PTC 디바이스의 평면도,2 is a plan view of a PTC device according to the present invention;
도 3은 본 발명에 따른 PTC 디바이스의 측면도이다.3 is a side view of a PTC device according to the present invention.
< 도면의 주요부분에 관한 부호의 설명 ><Description of the code | symbol about the principal part of drawing>
10: 몸체 20: 구리박판10: body 20: copper foil
30: 니켈리드 100: PTC 디바이스30: nickel lead 100: PTC device
다음으로는 본 발명에 따른 저항복구 특성이 우수한 PTC 디바이스 제조방법 및 PTC 디바이스에 관하여 첨부되어진 도면과 더불어 설명하기로 한다.Next, a PTC device manufacturing method and a PTC device having excellent resistance recovery characteristics according to the present invention will be described with reference to the accompanying drawings.
도 1은 본 발명에 따른 저항복구 특성이 우수한 PTC 디바이스 제조방법의 공정순서도이고, 도 2는 본 발명에 따른 PTC디바이스의 평면도이며, 도 3은 본 발명에 따른 PTC디바이스의 측면도이다.1 is a process flowchart of a method for manufacturing a PTC device having excellent resistance recovery characteristics according to the present invention, FIG. 2 is a plan view of a PTC device according to the present invention, and FIG. 3 is a side view of a PTC device according to the present invention.
도 1, 도 2 및 도 3에 도시된 바와 같이, 상기 PTC 제조방법은 추가적인 트립을 겪게 되더라도 저항상승이 거의 없도록 PTC디바이스(100)를 제조할 수 있도록 하기위해 다음과 같은 단계별 공정으로 이루어진다.As shown in Figures 1, 2 and 3, the PTC manufacturing method is a step-by-step process in order to be able to manufacture the PTC device 100 so that there is almost no increase in resistance even if an additional trip.
우선, 약 70 중량% 정도의 저융점 수지와, 약 15 중량% 정도의 중융점 수지 및 약 15 중량% 정도의 고융점 수지로 이루어진 고분자수지 100 중량에 대해 DBP 수치가 100g당 100 ㎤ 내지 140 ㎤정도인 약 95 중량비 정도의 카본블랙과, 약 0.5중량비 정도의 가교제 및 약 1중량비 정도의 첨가제와, 약 10중량비 정도의 폴리에틸렌 왁스(Polyethylene Wax)를 투입하여 PTC복합수지를 배합한다.First, the DBP value is 100 cm 3 to 140 cm 3 per 100 g based on 100 weight of the polymer resin composed of about 70 wt% of the low melting point resin, about 15 wt% of the middle melting point resin, and about 15 wt% of the high melting point resin. The PTC composite resin is blended by adding about 50 weight percent carbon black, about 0.5 weight ratio crosslinking agent, about 1 weight ratio additive, and about 10 weight ratio polyethylene wax.
이 때 상기 고융점수지는 HDPE(High Density Polyethylene, 고밀도 에틸렌), MDPE(Medium Density Polyethylene, 중밀도 에틸렌)를 포함하는 결정성 수지인 것이 바람직하고, 상기 중융점수지는 LDPE(Low Density Polyethylene, 저밀도 에틸렌), LLDPE(Linear Low Density Polyethylene, 선형 저밀도 에틸렌), 메탈로센 수지를 포함하는 결정성 수지인 것이 바람직하며, 상기 저융점수지는 EEA 와 EAA의 혼합물 중에서 선택되는 에틸렌아크릴레이트 공중합체(CH2 = CHCOOCmH2m+1에서 m은 4미만임)인 것이 바람직하다.At this time, the high melting point resin is HDPE (High Density Polyethylene, high density ethylene), MDPE (Medium Density Polyethylene, medium density ethylene) It is preferable that the crystalline resin, the medium melting point resin is LDPE (Low Density Polyethylene, low density) It is preferably a crystalline resin including ethylene), LLDPE (Linear Low Density Polyethylene), metallocene resin, and the low melting point resin is an ethylene acrylate copolymer (CH2) selected from a mixture of EEA and EAA. = M in CHCOOCmH2m + 1 is less than 4).
여기서, 상기 고융점수지는 약 120℃ 정도의 온도에서 용융되는 것이고, 상기 중융점수지는 약 100 내지 120℃ 정도의 온도에서 용융되는 것이며, 상기 저융점수지는 약 100℃정도 이하의 온도에서 용융되는 것이다.Here, the high melting point resin is melted at a temperature of about 120 ℃, the middle melting point resin is melted at a temperature of about 100 to 120 ℃, the low melting point resin is melted at a temperature of about 100 ℃ or less Will be.
또한, 상기 PTC복합수지에는 배합의 원활함을 위해 소정의 첨가제가 첨가되며, 상기 가교제는 오르가닉 페록사이드(Organic Peroxide)이다.(S100)In addition, a predetermined additive is added to the PTC composite resin to facilitate blending, and the crosslinking agent is organic peroxide. (S100)
그리고, 상기 PTC복합수지를 단축스크류 압출기(미도시)로 약 135℃정도 에서 시트형태로 압출한다.(S200)In addition, the PTC composite resin is extruded in a sheet form at about 135 ° C. using a single screw extruder (not shown).
아울러, 상기 시트형태의 상기 PTC복합수지의 양측면에 니켈도금되어진 구리박판(20)을 합착(Lamination)하게 된다.(S300)In addition, the nickel plated copper foil 20 is laminated on both sides of the sheet-formed PTC composite resin. (S300)
다음으로 구리박판(20)이 합착된 상기 PTC복합수지를 온도가 약 220℃ 정도, 압력이 약 200kgf/㎠ 정도하에서 약 45분 동안 프레스(미도시)로 가교한 뒤, 소정형상의 금형으로 펀칭하여 면적이 약 0.572 ㎠ 정도이며, 두께가 약 0.022 cm 정도인 사각판재 형태의 몸체(10)를 형성한다.(S400)Next, the PTC composite resin to which the copper foil 20 is bonded is crosslinked by a press (not shown) for about 45 minutes under a temperature of about 220 ° C. and a pressure of about 200 kgf / cm 2, and then punched into a mold of a predetermined shape. The area is about 0.572 cm 2, and the body 10 is formed in the shape of a square plate having a thickness of about 0.022 cm.
이 때 상기 프레스의 가압공정은 상기 PTC복합수지의 가교가 효율적으로 이루어지고, 가교 과정 동안 카본블랙의 재배열이 이루어지면서 궁극적으로 원하는 제품의 특성을 구현할 수 있도록 하는 조건하에서 이루어져야 하는데, 각 조건은 다음과 같다.At this time, the pressurization process of the press is carried out under the condition that the crosslinking of the PTC composite resin is efficiently performed and rearrangement of the carbon black is performed during the crosslinking process, and ultimately, the desired product characteristics can be realized. As follows.
우선 온도범위는 약 180 ~ 240 ℃이고, 압력은 약 150 ~ 200 kgf이며, 시간 은 20 ~ 50 분인데, 이러한 시간범위는 가교 반응과 동시에 열과 압력에 의한 PTC복합수지의 내부 모폴로지와 카본블랙의 재배열을 통해 제품의 특성을 만족하도록 설정된다.First, the temperature range is about 180 ~ 240 ℃, the pressure is about 150 ~ 200 kgf, the time is 20 ~ 50 minutes, this time range is the crosslinking reaction of the internal morphology and carbon black of PTC composite resin by heat and pressure The rearrangement is set to satisfy the characteristics of the product.
다음으로 상기 몸체(10)의 양측에 주석-납 성분의 솔더크림으로 전원연결을 위한 니켈 리드(30)를 부착하고, 고온의 리플로우(미도시)를 통과시킨 후 강제냉각시켜 결착한다.(S500)Next, the nickel lead 30 for power connection is attached to both sides of the body 10 by solder cream of tin-lead component, passed through a high temperature reflow (not shown), and then forcedly cooled to bind. S500)
마지막으로 추가적인 트립시 갑작스런 저항상승을 방지하기 위하여 리드(30) 및 구리박판(20)이 부착된 상기 몸체(10)에 전압 약 16V 정도, 전류 약 100A 정도의 전원을 5초 동안 인가하여 트립한 뒤 자연 냉각시킴으로써, PTC디바이스(100)를 완성한다.(S600)Lastly, in order to prevent a sudden increase in resistance during an additional trip, the power supply having a voltage of about 16 V and a current of about 100 A is applied to the body 10 to which the lead 30 and the copper thin plate 20 are attached for 5 seconds. After cooling naturally, the PTC device 100 is completed. (S600)
상기와 같은 PTC 디바이스(100)는 상술한 바와 같이, 상기 PTC복합수지의 양측면에 각가 결합되어 몸체(10)를 이루는 한쌍의 구리박판(20)과, 상기 각 구리박판(20)의 각 일측 및 각 타측에 길이방향으로 결착되어진 니켈리드(30) 등을 포함하여 이루어진다.As described above, the PTC device 100 includes a pair of copper foils 20 forming angles on both sides of the PTC composite resin to form a body 10, and one side of each of the copper foils 20 and It comprises a nickel lead 30 and the like bound on the other side in the longitudinal direction.
이와 같이 이루어진 상기 PTC 디바이스 제조방법에서 각 제조조건(온도, 전압, 전류, 압력 등)을 달리하여 제조되는 PTC복합수지 및 제품도 본 발명에 포함될 수 있음은 물론이다.In the PTC device manufacturing method made as described above, PTC composite resins and products manufactured by different manufacturing conditions (temperature, voltage, current, pressure, etc.) may also be included in the present invention.
이상에서와 같은 본 발명에 관한 저항복구 특성이 우수한 PTC 디바이스 제조방법 및 PTC 디바이스에 따르면, 추가적인 트립시에도 저항상승이 거의 없는 안정적인 PTC디바이스를 제조할 수 있는 특징이 있다.According to the PTC device manufacturing method and PTC device excellent in the resistance recovery characteristics according to the present invention as described above, there is a feature that can produce a stable PTC device with little resistance increase during additional trip.
따라서, 상기 PTC 디바이스를 배터리나 회로보호용으로 사용하여 보다 안정적 회로디자인 및 전력손실을 방지할 수 있는 효과가 있다.Therefore, by using the PTC device for battery or circuit protection, there is an effect that can prevent more stable circuit design and power loss.
비록 본 발명이 상기에서 언급한 바람직한 설명과 관련하여 설명되어졌지만, 본 발명의 요지와 범위로부터 벗어남이 없이 다른 다양한 수정 및 변형이 가능할것이다. 따라서, 첨부된 청구의 범위는 본 발명의 진정한 범위 내에 속하는 그러한 수정 및 변형을 포함할 것이라고 여겨진다.Although the present invention has been described in connection with the above-mentioned preferred description, other various modifications and variations may be made without departing from the spirit and scope of the invention. Accordingly, it is intended that the appended claims cover such modifications and variations as fall within the true scope of the invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100986014B1 (en) | 2010-01-20 | 2010-10-06 | 이기철 | Polymer ptc thermistor and thereof |
| KR100985965B1 (en) | 2010-01-20 | 2010-10-06 | 이기철 | Manufacturing method of polymer ptc thermistor which has fast recovery time back to post trip resistance level |
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| KR100679742B1 (en) * | 2004-11-01 | 2007-02-07 | 주식회사 폴리센 | Polymer composition having ptc-characteristics and ptc polymer thermistor prepared thereof |
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