KR100419019B1 - Wafer pedestal - Google Patents
Wafer pedestal Download PDFInfo
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- KR100419019B1 KR100419019B1 KR10-2001-0068512A KR20010068512A KR100419019B1 KR 100419019 B1 KR100419019 B1 KR 100419019B1 KR 20010068512 A KR20010068512 A KR 20010068512A KR 100419019 B1 KR100419019 B1 KR 100419019B1
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- metal plate
- ceramic plate
- guide ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 발명에 따른 웨이퍼 지지대는, 측면에 아래부분이 돌출된 환형 단차를 갖는 원형의 금속판; 상기 금속판 윗면에 올려 놓여지는 원형의 세라믹판; 상기 단차부에 걸쳐져서 상기 금속판과 세라믹판의 둘레를 감싸도록 설치되는 세라믹 재질의 가이드 링을 포함하고, 상기 가이드링과 상기 세라믹판은 일체형으로 이루어지며, 웨이퍼는 상기 세라믹판 상에 올려 놓여지는 것을 특징으로 한다. 본 발명에 의하면, 세라믹판과 가이드 링을 일체화시켜 세라믹판을 고정시키기 때문에 세라믹판을 금속판에 인듐 본딩할 필요가 없다. 따라서, 인듐 본딩이 금속판의 열팽창 또는 공정기체의 공격을 받아서 떨어지는 문제가 발생하지 않기 때문에 장비의 유지가 용이하고 그 비용 또한 절감된다.Wafer support according to the present invention, a circular metal plate having an annular step protruding the lower portion on the side; A circular ceramic plate placed on an upper surface of the metal plate; And a guide ring made of a ceramic material disposed to cover the circumference of the metal plate and the ceramic plate, wherein the guide ring and the ceramic plate are integrally formed, and a wafer is placed on the ceramic plate. It is characterized by. According to the present invention, the ceramic plate is fixed to the metal plate because the ceramic plate and the guide ring are integrated to fix the ceramic plate. Therefore, since indium bonding does not cause a problem of falling due to thermal expansion of the metal plate or attack of the process gas, maintenance of the equipment is easy and the cost is also reduced.
Description
본 발명은 웨이퍼 지지대에 관한 것으로서, 특히 웨이퍼가 올려 놓여지는 세라믹판이 움직이지 못하도록 잘 고정하여 장비의 유지비용을 절감하고, 공정의 신뢰성을 향상시킬 수 있는 웨이퍼 지지대에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer support, and more particularly, to a wafer support that can be secured to prevent movement of a ceramic plate on which a wafer is placed, thereby reducing equipment maintenance costs and improving process reliability.
반도체소자를 제조하기 위해서는 웨이퍼를 올려놓는 웨이퍼 지지대가 대부분필요하다. 정밀한 공정일수록 웨이퍼 지지대에 웨이퍼가 정확히 안착될 필요가 있다.In order to manufacture a semiconductor device, a wafer support on which a wafer is placed is mostly required. The more precise the process, the more precisely the wafer needs to be seated on the wafer support.
도 1은 종래의 웨이퍼 지지대를 설명하기 위한 단면도이다. 도 1을 참조하면, 지지본체(160) 상에는 격리 컵(isolation cup, 150)이 놓여있고, 격리 컵(150) 상에는 알루미늄 등으로 이루어진 원형 금속판(110)이 놓여진다. 금속판(110) 상에는 원형 세라믹판(120)이 올려 놓여지고, 웨이퍼(미도시)는 세라믹판(120) 상에 올려 놓여진다. 세라믹판(120)은 인듐 접합(indium bonding)에 의하여 금속판(110)에 접합되어 고정된다. 금속판(110) 측면에는 아래부분이 돌출된 환형 단차가 형성되어 있다.1 is a cross-sectional view illustrating a conventional wafer support. Referring to FIG. 1, an isolation cup 150 is placed on the support body 160, and a circular metal plate 110 made of aluminum is placed on the isolation cup 150. The circular ceramic plate 120 is placed on the metal plate 110, and a wafer (not shown) is placed on the ceramic plate 120. The ceramic plate 120 is bonded and fixed to the metal plate 110 by indium bonding. On the side of the metal plate 110 is formed an annular stepped protrusion.
가이드 링(130)은 세라믹 재질로 되어 있으며, 상기 단차부에 걸쳐져서 금속판(110)과 세라믹판(120)의 둘레를 감싸도록 설치된다. 이 때, 가이드 링(130)은 그 내측면이 금속판(110) 측면과 0.5mm 정도의 미세간격만큼 이격되도록 설치된다. 이는 금속판(110) 내부에 설치된 가열수단(미도시)에 의해 가열이 이루어질 경우에 금속판(110)의 열팽창을 고려한 것이다.The guide ring 130 is made of a ceramic material and is installed to cover the circumference of the metal plate 110 and the ceramic plate 120 by covering the stepped portion. At this time, the guide ring 130 is installed such that its inner surface is spaced apart from the metal plate 110 side by about 0.5mm. This is to consider the thermal expansion of the metal plate 110 when the heating is made by a heating means (not shown) installed inside the metal plate 110.
가스 포커스 링(140)은 가이드 링(130) 둘레를 감싸도록 설치된다. 이 때, 가스 포커스 링(140)과 가이드 링(130) 사이에는 미세 틈이 형성되며, 상기 미세 틈을 통하여 공급되는 기체가 웨이퍼 상부 중앙 부분으로 분사되도록 가스 포커스 링(140)의 윗단 부분은 안쪽으로 구부러져 있다.The gas focus ring 140 is installed to surround the guide ring 130. At this time, a fine gap is formed between the gas focus ring 140 and the guide ring 130, and the upper end portion of the gas focus ring 140 is inward so that the gas supplied through the fine gap is injected into the upper center portion of the wafer. Bent into.
상술한 종래의 웨이퍼 지지대는, 세라믹판(120)이 움직이는 것을 방지하기 위하여 세라믹판(120)을 금속판(110)에 인듐 접합시킨다. 그러나, 이러한 인듐 접합은 비용이 매우 많이 든다는 단점이 있다. 그리고, 금속판(110)의 열팽창 및 공정에 사용되는 기체, 예컨대 SiH4 기체 등의 공격을 받아서 인듐 접합이 쉽게 떨어진다는 문제가 있다.In the above-described conventional wafer supporter, the ceramic plate 120 is indium bonded to the metal plate 110 in order to prevent the ceramic plate 120 from moving. However, this indium junction has the disadvantage of being very expensive. In addition, there is a problem that the indium junction is easily dropped due to the attack of the gas used in the thermal expansion and the process of the metal plate 110, for example, SiH 4 gas.
따라서, 본 발명이 이루고자 하는 기술적 과제는, 인듐 접합을 하지 않고 세라믹판을 고정시킨 웨이퍼 지지대를 제공하는 데 있다.It is therefore an object of the present invention to provide a wafer support on which a ceramic plate is fixed without indium bonding.
도 1은 종래의 웨이퍼 지지대를 설명하기 위한 단면도;1 is a cross-sectional view for explaining a conventional wafer support;
도 2는 본 발명에 따른 웨이퍼 지지대를 설명하기 위한 단면도이다.2 is a cross-sectional view for explaining a wafer support according to the present invention.
< 도면의 주요 부분에 대한 참조번호의 설명 ><Description of Reference Numbers for Main Parts of Drawings>
110: 금속판 120: 세라믹판110: metal plate 120: ceramic plate
130: 가이드 링 140: 가스 포커스 링130: guide ring 140: gas focus ring
150: 격리 컵 160: 지지본체150: isolation cup 160: support body
상기 기술적 과제를 달성하기 위한 본 발명에 따른 웨이퍼 지지대는, 측면에 아래부분이 돌출된 환형 단차를 갖는 원형의 금속판; 상기 금속판 윗면에 올려 놓여지는 원형의 세라믹판; 및 상기 단차부에 걸쳐져서 상기 금속판과 세라믹판의 둘레를 감싸도록 설치되는 세라믹 재질의 가이드 링을 포함하고, 상기 가이드링과 상기 세라믹판은 일체형으로 이루어지며, 웨이퍼는 상기 세라믹판 상에 올려 놓여지는 것을 특징으로 한다.According to an aspect of the present invention, there is provided a wafer support, comprising: a circular metal plate having an annular stepped portion protruding from a lower side thereof; A circular ceramic plate placed on an upper surface of the metal plate; And a guide ring made of a ceramic material disposed to cover the periphery of the metal plate and the ceramic plate, wherein the guide ring and the ceramic plate are integrally formed, and a wafer is placed on the ceramic plate. It is characterized by losing.
이하에서, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.
도 2는 본 발명에 따른 웨이퍼 지지대를 설명하기 위한 단면도이다. 도 2를 참조하면, 지지본체(260) 상에는 격리 컵(isolation cup, 250)이 놓여있고, 격리컵(250) 상에는 알루미늄 등으로 이루어진 원형 금속판(210)이 놓여진다. 금속판(210) 상에는 원형 세라믹판(220)이 올려 놓여지고, 웨이퍼(미도시)는 세라믹판(220) 상에 올려 놓여진다. 세라믹판(220)은 종래와 같이 금속판(210)에 인듐 접합(indium bonding) 되는 것이 아니라, 가이드 링(230)과 일체형을 이룬다.2 is a cross-sectional view for explaining a wafer support according to the present invention. Referring to FIG. 2, an isolation cup 250 is placed on the support body 260, and a circular metal plate 210 made of aluminum is placed on the isolation cup 250. The circular ceramic plate 220 is placed on the metal plate 210, and a wafer (not shown) is placed on the ceramic plate 220. The ceramic plate 220 is not indium bonded to the metal plate 210 as in the related art, but is integral with the guide ring 230.
가이드 링(230)은 세라믹 재질로 되어 있으며, 금속판(210) 측면에 형성된 환형 단차부에 걸쳐져서 금속판(210)과 세라믹판(220)의 둘레를 감싸도록 설치된다. 이 때, 가이드 링(230)은 그 내측면이 금속판(210) 측면과 0.5mm 정도의 미세간격만큼 이격되도록 설치된다. 이는 금속판(210) 내부에 설치된 가열수단(미도시)에 의해 가열이 이루어질 경우에 금속판(210)의 열팽창을 고려한 것이다.The guide ring 230 is made of a ceramic material and is installed to cover the circumference of the metal plate 210 and the ceramic plate 220 by covering the annular stepped portion formed on the side of the metal plate 210. At this time, the guide ring 230 is installed such that its inner surface is spaced apart from the metal plate 210 side by about 0.5mm. This is to consider the thermal expansion of the metal plate 210 when the heating is made by a heating means (not shown) installed inside the metal plate 210.
가스 포커스 링(240)은 가이드 링(230) 둘레를 감싸도록 설치된다. 이 때, 가스 포커스 링(240)과 가이드 링(230) 사이에는 미세 틈이 형성되며, 상기 미세 틈을 통하여 공급되는 기체가 웨이퍼 상부 중앙 부분으로 분사되도록 가스 포커스 링(240)의 윗단 부분은 안쪽으로 구부러져 있다.The gas focus ring 240 is installed to surround the guide ring 230. At this time, a fine gap is formed between the gas focus ring 240 and the guide ring 230, and the upper end portion of the gas focus ring 240 is inward so that the gas supplied through the fine gap is injected into the upper center portion of the wafer. Bent into.
상술한 바와 같은 본 발명에 의하면, 세라믹판(220)과 가이드 링(230)을 일체화시켜 세라믹판(220)을 고정시키기 때문에 세라믹판(220)을 금속판(210)에 인듐 본딩할 필요가 없다. 따라서, 인듐 본딩이 금속판(210)의 열팽창 또는 공정기체의 공격을 받아서 떨어지는 문제가 발생하지 않기 때문에 장비의 유지가 용이하고 그 비용 또한 절감된다.According to the present invention as described above, since the ceramic plate 220 is fixed by integrating the ceramic plate 220 and the guide ring 230, the ceramic plate 220 does not need to be indium bonded to the metal plate 210. Therefore, since indium bonding does not cause a problem of falling due to the thermal expansion of the metal plate 210 or the attack of the process gas, the maintenance of the equipment is easy and the cost is also reduced.
본 발명은 상기 실시예에만 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2001-0068512A KR100419019B1 (en) | 2001-11-05 | 2001-11-05 | Wafer pedestal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2001-0068512A KR100419019B1 (en) | 2001-11-05 | 2001-11-05 | Wafer pedestal |
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| Publication Number | Publication Date |
|---|---|
| KR20030037472A KR20030037472A (en) | 2003-05-14 |
| KR100419019B1 true KR100419019B1 (en) | 2004-02-19 |
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| KR10-2001-0068512A KR100419019B1 (en) | 2001-11-05 | 2001-11-05 | Wafer pedestal |
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| KR (1) | KR100419019B1 (en) |
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- 2001-11-05 KR KR10-2001-0068512A patent/KR100419019B1/en not_active IP Right Cessation
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