KR100413790B1 - Integrated structure of photo diode for monitor and blue semiconductor diode - Google Patents

Integrated structure of photo diode for monitor and blue semiconductor diode Download PDF

Info

Publication number
KR100413790B1
KR100413790B1 KR1019970021877A KR19970021877A KR100413790B1 KR 100413790 B1 KR100413790 B1 KR 100413790B1 KR 1019970021877 A KR1019970021877 A KR 1019970021877A KR 19970021877 A KR19970021877 A KR 19970021877A KR 100413790 B1 KR100413790 B1 KR 100413790B1
Authority
KR
South Korea
Prior art keywords
layer
gan
monitor
photodiode
semiconductor laser
Prior art date
Application number
KR1019970021877A
Other languages
Korean (ko)
Other versions
KR19980085717A (en
Inventor
김택
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1019970021877A priority Critical patent/KR100413790B1/en
Publication of KR19980085717A publication Critical patent/KR19980085717A/en
Application granted granted Critical
Publication of KR100413790B1 publication Critical patent/KR100413790B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: An integrated structure of a photo diode for monitor and a blue semiconductor diode is provided to obtain a constant optical output and detect the optical output regardless of a variation of temperature by integrating the photo diode and the blue semiconductor laser diode. CONSTITUTION: An integrated structure of a photo diode for monitor and a blue semiconductor diode includes a substrate(1), a buffer layer(2), a first n-GaN layer(3a), a second n-GaN layer(3b), an n-ohmic metal layer(10), an n-clad layer(4), an active layer(5), a p-clad layer(6), a p-contact layer(7), a first p-ohmic metal layer(8), and a second p-ohmic metal layer(9). The substrate(1) is formed with sapphire and SiC. The buffer layer(2) is formed on the substrate. The first n-GaN layer(3a) is formed on the buffer layer. The n-ohmic metal layer(10) is formed on a first region of the first n-GaN layer. The second n-GaN layer(3b) is formed on the n-ohmic metal layer and a second region of the first n-GaN layer, respectively. The n-clad layer(4) is formed on the second n-GaN layer as separative layers, respectively. The active layer(5) is formed on the separative n-clad layer, respectively. The p-clad layer(6) is formed on the separative active layer, respectively. The p-contact layer(7) is formed on the separative p-clad layer, respectively. The first p-ohmic metal layer(8) and the second p-ohmic metal layer(9) are formed on the separative p-contact layer, respectively.

Description

모니터용 포토 다이오드 일체형 청색 반도체 레이저 장치Photodiode integrated blue semiconductor laser device for monitor

일반적인 반도체 레이저 다이오드는 주변온도가 변하면 광출력이 변하는 현상이 있는데 이는 DVD와 같은 기기의 응용에 많은 장애가 되고 있다.In general, the semiconductor laser diode has a phenomenon that the light output is changed when the ambient temperature changes, which is an obstacle to the application of a device such as a DVD.

상기 단점을 극복하고자, 레이저 다이오드 한 쪽 면에 광 검출용 포토 다이오드를 부착하는 방법이 있다..In order to overcome the above disadvantages, there is a method of attaching a photodiode for detecting the photodiode on one side of the laser diode.

상기 광 검출용 포토 다이오드는 광 출력을 검출하여 이를 다시 피드백하여 입력 전류를 조절함으로써, 상기 단점을 없앨 수 있다.The photodiode for photodetection detects the light output and feeds it back to adjust the input current, thereby eliminating the disadvantage.

그러나 통상적으로 상기 목적을 위해서는 별도의 규소 (Si)로 제작된 포토 다이오드를 이용하는 것이 널리 이용되지만, 이는 소자의 조립에 들어가는 비용이 높아지는 단점이 있다.In general, however, a photodiode made of a separate silicon (Si) is widely used for the above purpose, but this has a disadvantage in that the cost of assembling the device becomes high.

이에 본발명은 상기 전술한 바와 같이 종래의 문제점을 해소시키기 위해 창안된 것으로 온도 변화에 따라 광출력을 일정하게 유지시키는 레이저 다이오드를 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the conventional problems as described above, and an object thereof is to provide a laser diode that maintains a constant light output according to temperature change.

본 발명의 구조에서 포토 다이오드는 레이저에서 방출된 빛을 흡수하여 활성층에서 포토 전류를 발생시켜 전류와 전압값을 피드백시킴으로써 레이저 다이오드의 광출력을 조절할 수 있다.In the structure of the present invention, the photodiode absorbs the light emitted from the laser to generate a photocurrent in the active layer to feed back the current and voltage values, thereby controlling the light output of the laser diode.

이 때 레이저 다이오드와 포토 다이오드와의 거리는 레이저 빔의 방사각을 고려하여 적절한 포토 전류를 얻을만큼 가깝게, 광 피드백에 의한 잡음이 충분히 작을 만큼 멀게 조절하는 것이 중요하다.At this time, it is important to adjust the distance between the laser diode and the photodiode so as to be close enough to obtain an appropriate photo current in consideration of the radiation angle of the laser beam, and to be far enough so that the noise due to the optical feedback is small enough.

도 1은 본 발명에 의한 레이저 반도체의 정면도.1 is a front view of a laser semiconductor according to the present invention.

도 2는 본 발명에 의한 레이저 반도체의 좌측면도2 is a left side view of a laser semiconductor according to the present invention;

도 3은 본 발명에 의한 레이저 반도체의 평면도3 is a plan view of a laser semiconductor according to the present invention;

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

1 : 기판1: substrate

2 : 버퍼 층 (Buffer Layer)2: Buffer Layer

3 : n-질화 나트륨 (GaN) 층3: n-sodium nitride (GaN) layer

4 : n 층4: n layer

5 : 활성층5: active layer

6 : p 층6: p layer

7 : p-콘택트 (contact) 층7: p-contact layer

8 : 모니터 다이오드용 p 오믹(ohmic) 금속8: p ohmic metal for monitor diode

9 : 레이저 다이오드용 p 오믹(ohmic) 금속9: p ohmic metal for laser diode

10 : n 오믹 금속10: n ohmic metal

본 발명은 상기 종래의 문제점을 해결하기 위해 모니터용 포토 다이오드를 레이저 다이오드와 일체로 결합시킨 구조로 되어 있다.The present invention has a structure in which a monitor photodiode is integrally combined with a laser diode in order to solve the conventional problems.

도 1은 본 발명에 의한 구조를 나타내는 정면도로서 사파이어(Sapphire)와 탄화 규소(SiC)로 이루어진 기판(1)상에 GaN 혹은 AlN으로 이루어지는 버퍼 (buffer)층(2)과 n-GaN 층(3)이 형성되고, 상기 n-GaN층(3)위의 한쪽면에 n-ohmic 금속층(10)이 구비되고 다른 쪽에는 n-AlGaN 혹은 n-GaN으로 이루어지는 n-clad 층(4), 그리고 GaN 혹은 InGaN으로 구성된 양자우물과 GaN 혹은 InGaN 혹은 AlGaN으로 구성되는 격벽으로 구성된 단일 혹은 다중 양자우물로 이루어진 활성층(5),p-AlGaN 혹은 p-GaN으로 이루어지는 p-clad 층(6),p-contact 층(7)이 양분되어 서로 일정한 간격을 유지한 채 적층되어 있다.1 is a front view showing a structure according to the present invention, in which a buffer layer 2 made of GaN or AlN and an n-GaN layer 3 are formed on a substrate 1 made of sapphire and silicon carbide (SiC). ), An n-ohmic metal layer 10 is provided on one side of the n-GaN layer 3, and an n-clad layer 4 made of n-AlGaN or n-GaN on the other side, and GaN Or an active layer (5) consisting of a single or multiple quantum wells consisting of a quantum well composed of InGaN and a partition consisting of GaN or InGaN or AlGaN, a p-clad layer (6) consisting of p-AlGaN or p-GaN, The layers 7 are bisected and stacked with a constant distance from each other.

상기 반도체 레이저 장치는 2원,3원 및 4원 혼정계인 GaN,AlN,InN,InGaN, AlGaN,InGaAlN으로 구성된다.The semiconductor laser device is composed of GaN, AlN, InN, InGaN, AlGaN, InGaAlN, which are binary, tertiary and quaternary mixed crystal systems.

상기 두 개로 분리된 p-contact 층(7)위에 한 층은 모니터 다이오드용 p-ohmic 금속(8)이 적층되어 포토다이오드를 이루며, 다른 층은 레이저 다이오드용 p-ohmic 금속이 적층되어 레이저 다이오드를 형성한다.On the two separated p-contact layers (7), one layer is stacked with p-ohmic metals (8) for monitor diodes to form a photodiode, and the other layer is laminated with p-ohmic metals for laser diodes. Form.

본 발명에 의한 레이저 반도체의 구조는 일반적인 에피텍시얼 (epitaxial) 구조와 같으나 레이저 캐비티 (cavity) 한 쪽에 포토 다이오드 역할을 하기 위한 별도의 다이오드를 구비하였다.The structure of the laser semiconductor according to the present invention is the same as a general epitaxial structure, but a separate diode is provided on one side of the laser cavity to serve as a photodiode.

상기 구조는 MOCVD (Metal Organic Chemical Vapor Deposition)법 또는 MBE (Molcular Beam Epitaxy)법등에 의해 결정성장과정을 거친 후 건식식각법으로 레이저 다이오드의 캐비티를 만들 때 함께 제작되게 한다.The structure may be fabricated together when the cavity of the laser diode is formed by dry etching after crystal growth by MOCVD (Metal Organic Chemical Vapor Deposition) or MBE (Molcular Beam Epitaxy).

상기 캐비티를 제작하는 방법으로는 RIE (Reactive Ion Etch), ECR (Electron Cycloton Resonals) RIE,ICP (Inductively Coupled Plama) RIE 및 CAIBE (Chemical Assisted Ion Beam Etching)과 같은 건식식각법이 사용된다.As a method of manufacturing the cavity, dry etching methods such as Reactive Ion Etch (RIE), Electron Cycloton Resonals (ERC) RIE, Inductively Coupled Plama (ICP) RIE, and Chemical Assisted Ion Beam Etching (CAIBE) are used.

상기 서술한 바와 같이 본 발명에 의한 구조는 온도에 따른 광출력의 저하를 예방하고 일정하게 광출력을 낼 수 있다.As mentioned above, the structure by this invention can prevent the fall of light output with temperature, and can make a light output constant.

일반적으로 온도가 상승하면 레이저 다이오드의 광출력이 저하하는 단점이 있으나 상기 단점을 극복하기 위한 과정을 설명한다.In general, there is a disadvantage in that the light output of the laser diode is lowered when the temperature rises, but a process for overcoming the disadvantage will be described.

기판 한 쪽면에 구비된 포토 다이오드를 이용하여 레이저 다이오드의 광출력을 검출한다.(S1)The photodiode provided on one side of the substrate is used to detect the light output of the laser diode (S1).

상기 검출된 광출력을 피드백시켜 입력 전류값을 조절한다.(S2)The input current value is adjusted by feeding back the detected light output (S2).

상기 입력 전류값을 조절함으로써 온도에 따른 광출력의 저하를 막고 일정한 광출력을 유지할 수 있다.(S3)By adjusting the input current value, it is possible to prevent a decrease in light output according to temperature and maintain a constant light output.

도 2는 도1을 위에서 도시한 좌측면도이며 도 3은 평면도이다.2 is a left side view of FIG. 1 from above and FIG. 3 is a plan view.

상기에 기술한 바와 같이 본 발명에 의한 청색 반도체 레이저 장치는 온도 변화에도 일정한 광출력을 낼 수 있으며, 포토 다이오드가 스스로 광출력을 검출하여 제어함으로써 신뢰를 더할 수 있다.As described above, the blue semiconductor laser device according to the present invention can produce a constant light output even with a temperature change, and the photodiode can add reliability by detecting and controlling the light output by itself.

또한 상기 구조는 종래에 소자의 조립으로 인해 많은 비용이 소모되었으나 본 발명에서는 레이저 다이오드와 포토 다이오드를 집적화 시킴으로써 비용절감효과까지 얻을 수 있다.In addition, the structure has been consumed a lot of costs due to the assembly of the conventional device in the present invention can be achieved by reducing the cost by integrating the laser diode and the photodiode.

Claims (4)

사파이어 (sapphire)와 탄화 규소 (SiC)로 이루어진 기판(1)과, 상기 기판위에 위치한 버퍼층(2)과 상기 버퍼층 위에 위치한 n-GaN 층(3a)과 상기 GaN(3a) 층 의 제 1영역위에 위치한 n-ohmic 층(10)과 상기 n-GaN 층(3a)의 상기 제 1영역이외의 제 2영역위에 위치하고 두 부분으로 분리된 n-GaN 층(3b)과 상기 분리된 n-GaN 층(3b)위에 분리하여 위치한 n-clad 층(4)과, 상기 분리된 n-clad 층 위에 분리하여 위치한 활성층(5)과 상기 분리된 활성층 위에 분리하여 위치한 p-clad 층(6)과 상기 분리된 p-clad 층 위에 분리하여 위치한 p-contact 층(7)과 상기 분리된 p-contact 층 위에 각각 분리하여 위치한 모니터 다이오드용 p-ohmic 금속(8)과, 레이저 광원용 p-ohmic 금속(9);을 포함하여 이루어지는 모니터용 포토 다이오드 일체형 청색 반도체 레이저 장치.A substrate (1) made of sapphire and silicon carbide (SiC), a buffer layer (2) located on the substrate, an n-GaN layer (3a) located on the buffer layer, and a first region of the GaN (3a) layer An n-GaN layer 3b located on a second region other than the first region of the n-ohmic layer 10 and the n-GaN layer 3a positioned in two parts and the separated n-GaN layer ( 3b) an n-clad layer (4) located separately on the separated, an active layer (5) located separately on the separated n-clad layer and a p-clad layer (6) located separately on the separated active layer and the separated a p-contact layer (7) positioned separately on the p-clad layer, a p-ohmic metal (8) for monitor diodes and a p-ohmic metal (9) for the laser light source, respectively located separately on the separated p-contact layer Photodiode integrated blue semiconductor laser device for a monitor comprising a. 청구항 1에 있어서 상기 반도체 레이저는 질화 갈륨 (GaN),질화 알루미늄 (AlN),질화 인듐 (InN),질화 인듐갈륨 (InGaN),질화 알루미늄 갈륨 (AlGaN) 및 질화 인듐갈륨알루미늄 (InGaALN)으로 구성되는 GaN계 2원 혹은 3원 혹은 4월 혼정계로 이루어지는 것을 특징으로하는, 모니터용 포토 다이오드 일체형 청색 반도체 레이저 장치.The semiconductor laser of claim 1, wherein the semiconductor laser comprises gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), and indium gallium aluminum nitride (InGaALN). A photodiode integrated blue semiconductor laser device for a monitor, comprising a GaN-based binary, ternary, or April mixed crystal system. 청구항 1항 또는 2항에 있어서 상기 버퍼층은 GaN 혹은 AlN으로 이루어지고, n-clad층은 n-AlGaN 혹은 n-GaN으로 이루어지고, 활성층은 GaN 혹은 InGaN으로 구성된 양자우물과 GaN 혹은 InGaN 혹은 AlGaN으로 구성되는 격벽으로 구성된 단일 혹은 다중 양자우물로 이루어지고, p-contact층은 p-GaN 혹은 p-InGaN으로 이루어진 것을 특징으로 하는, 모니터용 포토 다이오드 일체형 청색 반도체 레이저 장치.The method according to claim 1 or 2, wherein the buffer layer is made of GaN or AlN, n-clad layer is made of n-AlGaN or n-GaN, the active layer is a quantum well consisting of GaN or InGaN and GaN or InGaN or AlGaN A photodiode-integrated blue semiconductor laser device for a monitor, comprising a single or multiple quantum wells composed of partition walls, wherein the p-contact layer is composed of p-GaN or p-InGaN. 청구항 1에 있어서 상기 레이저 다이오드와 포토 다이오드와의 거리는 레이저 빔의 방사각을 고려하여 적절한 포토 전류를 얻을만큼 가깝고, 광 피드백에 의한 잡음이 충분히 작을만큼 멀리 설정되어 있는 것을 특징으로하는 모니터용 포토 다이오드 일체형 청색 반도체 레이저 장치.The photodiode for a monitor according to claim 1, wherein the distance between the laser diode and the photodiode is set close enough to obtain an appropriate photocurrent in consideration of the radiation angle of the laser beam, and the noise due to the optical feedback is set far enough. Integrated blue semiconductor laser device.
KR1019970021877A 1997-05-30 1997-05-30 Integrated structure of photo diode for monitor and blue semiconductor diode KR100413790B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019970021877A KR100413790B1 (en) 1997-05-30 1997-05-30 Integrated structure of photo diode for monitor and blue semiconductor diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970021877A KR100413790B1 (en) 1997-05-30 1997-05-30 Integrated structure of photo diode for monitor and blue semiconductor diode

Publications (2)

Publication Number Publication Date
KR19980085717A KR19980085717A (en) 1998-12-05
KR100413790B1 true KR100413790B1 (en) 2004-02-14

Family

ID=37423020

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970021877A KR100413790B1 (en) 1997-05-30 1997-05-30 Integrated structure of photo diode for monitor and blue semiconductor diode

Country Status (1)

Country Link
KR (1) KR100413790B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100887457B1 (en) * 2006-07-14 2009-03-10 세이코 엡슨 가부시키가이샤 Optical device and its manufacturing method, and optical device wafer
KR20240026402A (en) 2022-08-19 2024-02-28 한화오션 주식회사 Cargo dome system with integrated cargo and fuel feed

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100887457B1 (en) * 2006-07-14 2009-03-10 세이코 엡슨 가부시키가이샤 Optical device and its manufacturing method, and optical device wafer
KR20240026402A (en) 2022-08-19 2024-02-28 한화오션 주식회사 Cargo dome system with integrated cargo and fuel feed

Also Published As

Publication number Publication date
KR19980085717A (en) 1998-12-05

Similar Documents

Publication Publication Date Title
US6853663B2 (en) Efficiency GaN-based light emitting devices
US6618413B2 (en) Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
US7244964B2 (en) Light emitting device
US7541206B2 (en) Nitride-based semiconductor light-emitting device and method of manufacturing the same
US7813400B2 (en) Group-III nitride based laser diode and method for fabricating same
JP4352337B2 (en) Semiconductor laser and semiconductor laser device
EP1304778A2 (en) Laser diode
US20040149997A1 (en) Methods of forming electronic devices including semiconductor mesa structures and conductivity junctions and related devices
JPH10321910A (en) Light-emitting semiconductor element
EP1324444B1 (en) Dual III-V nitride laser structure with reduced thermal cross-talk
JP2000031533A (en) Semiconductor light emitting element
US20060284163A1 (en) Single ELOG growth transverse p-n junction nitride semiconductor laser
JP2000216494A (en) Semiconductor light emitting element and its manufacture
JPWO2019181309A1 (en) Semiconductor light emitting element and manufacturing method of semiconductor light emitting element
US6849474B2 (en) Growing a low defect gallium nitride based semiconductor
KR100413790B1 (en) Integrated structure of photo diode for monitor and blue semiconductor diode
US20090135873A1 (en) Process for producing gallium nitride-based compound semiconductor laser element and gallium nitride-based compound semiconductor laser element
JP3933637B2 (en) Gallium nitride semiconductor laser device
JP2002076519A (en) Semiconductor laser
JPH10303505A (en) Gallium nitride semiconductor light emitting device and its manufacture
JP2000307193A (en) Semiconductor laser, its manufacture, semiconductor device and manufacture of the same
JP3347633B2 (en) Semiconductor device and method of manufacturing the same
JPH08316527A (en) Semiconductor light emitting device
JPH10261816A (en) Semiconductor light emitting element and its manufacture
Akasaka et al. Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20091214

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee