KR100400967B1 - Design for semiconductor integrated circuit patterns - Google Patents

Abstract

The pattern design method of a semiconductor integrated circuit makes each opening pattern of a plurality of contact holes rectangular, and arranges these contact holes adjacent to the long sides of the rectangle of the said opening pattern, and to match the position of both ends of each long side. will be. In addition, the photomask is used to fabricate a semiconductor integrated circuit designed using the pattern design method of the semiconductor integrated circuit, and has a plurality of rectangular opening patterns as a plurality of contact hole opening patterns, and the plurality of rectangular openings. The patterns are adjacent to the long sides and are arranged to match the positions of both ends of each long side. The semiconductor device has a semiconductor integrated circuit designed by a method for designing a semiconductor integrated circuit.

Description

DESIGN FOR SEMICONDUCTOR INTEGRATED CIRCUIT PATTERNS}

The present invention relates to a method for designing a semiconductor integrated circuit pattern, a photomask used when manufacturing a semiconductor integrated circuit, and a method for manufacturing a semiconductor integrated circuit.

With the higher integration and higher speed of semiconductor devices, the miniaturization of patterns is accelerating. In particular, the pattern of the contact / through hole (hereinafter referred to as "contact hole") formed in the interlayer insulating film tends to reduce the contact hole diameter and shorten the distance between adjacent contact holes.

In general, when the distance between the contact holes is reduced, it is possible to densely arrange the patterns of the contact holes. However, uniformly reducing the distance between the contact holes reduces the exposure margin for the contact hole pattern. That is, in the photolithography process, the resolution of the mask pattern is lowered by the diffraction of light.

Therefore, in recent years, many phase shift masks are used as a method of improving the resolution of a mask pattern. In particular, halftone phase shift masks, which do not require an auxiliary pattern and are relatively easy to manufacture a mask, have attracted attention. This halftone type phase shift mask is a photomask having an opening portion and a translucent light shielding portion, and a phase difference of 180 ° is generated between the transmission light of the light shielding portion and the transmission light of the opening portion.

By the way, a square is used normally as an opening pattern shape of the contact hole formed in a photo mask. Although the contact holes may be formed alone, a plurality of contact holes are also arranged in a row. Even when using a halftone phase shift mask, when transferring the contact hole opening patterns arranged in such a column shape onto the wafer, there is a problem of deformation of the transfer pattern due to side lobes as described below. Is generated.

9A is a diagram showing the intensity distribution of exposure light when the exposure light passes through the photomask 100 which is a halftone phase shift mask having a single square opening 110. A main lobe (also called a main peak) of exposure light is formed at the center of the opening 110, but a side lobe is formed outside the opening. In addition, the main lobe and the side lobe are formed concentrically in plan view. Therefore, when the light intensity of this side lobe is strong, there is a fear that the pattern of the side lobe is transferred to the resist. This makes it difficult to form a desired design pattern on the wafer.

The light intensity of this side lobe depends on the illumination conditions of the exposure apparatus, the type of resist, the mask bias, and the like. Therefore, it is usually possible to avoid transferring the side lobe pattern to the resist on the wafer and to transfer the desired pattern to the wafer by finding the respective optimum conditions.

By the way, as shown in FIG. 9B, when the plurality of square openings 110A to 110C are arranged in a column shape close to the photomask 100, side lobes formed around the openings are overlapped to form side lobe peaks. Strength is increased. In this case, it is very difficult to avoid transferring the side lobe pattern onto the wafer.

Therefore, in the case of forming a plurality of contact holes in the related art, it is necessary to lengthen the distance between the patterns of the contact holes on the wafer by a predetermined value or more so as not to be affected by the side lobes. Therefore, pattern refinement was prevented due to the limitation of the position of the contact hole.

On the other hand, when a rectangular opening pattern is formed in a photomask, side lobe intensity | strength becomes small compared with a square opening pattern. However, the present invention is not limited to square and rectangular patterns, and when the plurality of patterns are arranged in close proximity, the problem of deformation of the transfer pattern due to the optical proximity effect cannot be ignored.

For example, when the photolithography process is performed using the photomask 103 in which a plurality of fine rectangular patterns 112a to 112f are formed as shown in FIG. 10A, the resist 105 on the wafer is formed as shown in FIG. 10B. The patterns 113a to 113f deformed by the optical proximity effect are transferred. In particular, when the distance between the adjacent rectangular patterns is narrow and the positions of the upper and lower ends near each rectangle are shifted (for example, 112b to 112f), the deformation of the transfer pattern due to the optical proximity effect is remarkably complicated ( For example, 113b-113f.

Conventionally, about the distortion by this optical proximity effect, OPC (Optical Proximity Correction) process which performs correction to the pattern on a mask in consideration of this distortion is performed previously. However, as shown in FIG. 10A, the OPC process for a plurality of misaligned patterns is complicated and it is impossible to correct completely.

A first object of the present invention is to provide a pattern design method of a semiconductor integrated circuit suitable for suppressing deformation of a transfer pattern caused by an exposure process and forming a pattern as designed on a wafer.

It is also a second object of the present invention to provide a photomask suitable for accurately transferring a design pattern onto a wafer.

Further, a third object of the present invention is to provide a semiconductor device designed using the pattern design method of the semiconductor integrated circuit.

The pattern design method of the semiconductor integrated circuit of the present invention is characterized in that each opening pattern of the plurality of contact holes is made into a rectangle, and these contact holes are adjacent to each other of the long sides of the rectangular shape of the opening pattern, and both ends of each long side. To position them.

According to the characteristic of the pattern design method of the semiconductor integrated circuit of the present invention, a rectangular opening pattern is provided on the photomask used for forming the pattern obtained by this method. When this rectangular opening pattern is used, since the intensity | strength of the side lobe of exposure light is weak, the deformation | transformation of the transfer pattern resulting from a side lobe can be suppressed. In addition, since the plurality of rectangular patterns are arranged to match both ends of the long side, accurate optical proximity effect correction can be performed in a photomask pattern relatively easily. Therefore, the pattern interval on a design can be narrowed on the premise of performing optical proximity effect correction process. In addition, the design pattern can be accurately transferred onto the wafer and the circuit area can be reduced.

Another feature of the pattern design method of the semiconductor integrated circuit of the present invention is that, when a plurality of contact holes having a rectangular or square opening pattern are mixed, depending on the arrangement condition of the pattern shape and the pattern adjacent to the target pattern The distance DS between adjacent patterns is determined. That is, in an area where the opposite end positions of adjacent opening patterns do not coincide with each other, the distance DS between the opening patterns is formed on the photomask when the corresponding opening pattern is formed. The distance DD2 at which the deformation of the transfer pattern due to the lobe or the optical proximity effect does not occur is set. In the region where the plurality of rectangular opening patterns are adjacent so that the long sides thereof face each other, and both end positions of adjacent patterns are aligned with each other, the distance DS between the opening patterns is set to the same opening pattern on the photomask. In the case of forming the film, the transfer pattern produced by using the same is shorter than the distance DD1 where the optical proximity effect does not occur.

According to another aspect of the pattern design method of the semiconductor integrated circuit of the present invention, the photomask used to form the patterning, the pattern and the OPC processing that does not cause deformation of the transfer pattern due to side lobes or optical proximity effects A pattern capable of correction can be formed. As a result, the design pattern can be accurately formed on the wafer.

The photomask of the present invention is characterized by having a rectangular opening pattern for a plurality of contact holes as a photomask for use in fabricating a semiconductor device having a semiconductor integrated circuit designed by the pattern design method of the semiconductor integrated circuit. In addition, the plurality of rectangular opening patterns are arranged such that the respective long sides face each other and are aligned with the positions of both ends of the long sides. Moreover, optical proximity effect correction may be given to this rectangular opening pattern.

According to the photomask of the present invention, it is possible to suppress deformation of the transfer pattern caused by the side lobe. In addition, when the positions of both ends of the long sides of each rectangular opening pattern are aligned, the optical proximity effect correction can be performed relatively easily, so that an accurate design pattern can be transferred onto the wafer.

A further feature of the photomask of the present invention is a photomask for use in fabrication of a semiconductor integrated circuit designed by the pattern design method of the semiconductor integrated circuit, wherein positions of both ends of adjacent square or rectangular opening patterns are not matched. However, the pattern (plural) in which the distance MS between each opening pattern is set to the distance MD2 at which the deformation does not occur in the transfer pattern due to the side lobe of the exposure light or the optical proximity effect, and the plurality of rectangular opening patterns vary in long sides. The patterns adjacent to each other and adjacent to each other adjacent to each other are aligned, and the distance MS between the opening patterns is set to be shorter than the distance MD1 where no optical proximity effect occurs, and the optical proximity effect correction is performed. To have (plural).

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing a circuit design pattern for explaining a contact hole pattern design method according to a first embodiment of the present invention and a pattern on a photomask corresponding thereto.

2 is a view showing a part of the pattern on the photomask by the contact hole pattern design method according to a second embodiment of the present invention.

3 is a table showing a relationship between an adjacent pattern shape and a pattern spacing according to the contact hole pattern design method according to the second embodiment of the present invention.

4 is a view showing a pattern on the photomask by the contact hole pattern design method according to a second embodiment of the present invention.

Fig. 5 is a flowchart showing the procedure of OPC processing according to the second embodiment of the present invention.

Fig. 6 is a diagram showing an example of a pattern to be subjected to OPC processing in the photomask according to the second embodiment of the present invention.

7 is an example of a graph created in step S102 of the flowchart of FIG. 5;

FIG. 8 is an example of a correction table created in step S103 of the flowchart of FIG. 5; FIG.

9A is a graph showing a photomask having a conventional contact hole opening pattern, and an intensity distribution of exposure light transferred through the opening pattern onto a resist.

Fig. 9B is a graph showing a photomask having a plurality of conventional contact hole opening patterns, and an intensity distribution of exposure light transferred through the opening pattern onto a resist.

10A is a diagram showing an example of a plurality of rectangular opening patterns formed on a conventional photomask.

Fig. 10B is a view showing a transfer pattern on a resist obtained by the photolithography process using the photomask of Fig. 9A, modified by the optical proximity effect.

<Explanation of symbols for main parts of drawing>

10, 100: design circuit pattern

20, 200: photomask pattern

11, 12, 13: contact hole

11A, 11B, 12A, 12B, 13A, 13B: Contact Hole Pattern

21, 22, 23: opening pattern

Square Aperture Patterns: 21A, 21B, 22A, 22B, 23A, 23B

(First embodiment)

1 is a view for explaining a pattern design method according to a first embodiment of the present invention. In the lower part of the figure, the design circuit pattern 10 which concerns on 1st Example, and the pattern 20 on the photomask corresponding to this design circuit pattern are shown. In addition, in order to facilitate understanding of the pattern design method according to the present embodiment, the conventional design circuit pattern 100 and the pattern 200 on the conventional photomask corresponding to the design circuit pattern 100 are shown on the upper side in the drawing. ). In order to simplify the description, the length of each of the one side of the square pattern and the short side of the rectangular pattern is described as f and the long side of the rectangular pattern is 2f.

Although it does not specifically limit to the photomask used here, Preferably, the phase shift type halftone type photomask is used. In this case, the mask light shielding portion has a transmittance of 3% to 20%.

In a semiconductor integrated circuit, it is often necessary to form a plurality of contact holes in the same layer. For example, when a plurality of transistors are formed, the semiconductor integrated circuit is electrically connected to a plurality of wirings in the upper layer from each gate electrode. A plurality of contact holes are formed. In such a case, in the conventional design circuit pattern, in order to perform electrical connection more reliably, many contact holes are formed in each gate electrode in many cases. For example, in the design circuit pattern 100, the contact holes 11A and 11B are formed on the gate electrode 31A, the contact holes 12A and 12B are formed on the gate electrode 32A, and the contact holes are formed on the gate electrode 33A. 13A and 13B) are formed. Since the two contact holes formed on the same gate electrode are connected to the same wiring, they are electrically at the same potential.

As a result, in the conventional design circuit pattern, a plurality of square contact hole patterns are arranged in close proximity to the top, bottom, left and right. In addition, corresponding opening patterns 21A, 21B, 22A, 22B, 23A, and 23B are similarly arranged on the pattern 200 of the photomask to form the contact hole pattern.

As described above, in the case of performing photolithography using a photomask in which a plurality of square opening patterns are arranged in close proximity, in order to avoid deformation of the transfer pattern on the resist by the side lobe as shown in Fig. 9B, each contact on the photomask is avoided. The hole opening pattern spacing is separated by a predetermined distance or more, for example, 2f or more. Therefore, also in the design pattern 100, the space | interval of each contact hole is decided in consideration of the conditions of this exposure process. For this reason, the gate electrodes 31A to 33A in the conventional design circuit pattern 100 have a wider gate electrode width in a region where contact holes are formed.

In contrast, the pattern design method of the present embodiment is intended to replace the conventional design circuit pattern 100 with the design circuit pattern 10. That is, according to the design method of the present embodiment, the contact holes patterns 11A, 11B, 12A, 12B, 13A, and 13B, which are conventional squares, are replaced with the rectangular patterns 11, 12, and 13. In particular, the plurality of contact holes, which are finally electrically shorted and coincided, are replaced with contact holes having a single rectangular pattern. For example, the contact hole patterns 11A and 11B are replaced with the contact holes 11 of the rectangular pattern. Since the contact holes of the plurality of square patterns on the coin are replaced with the contact holes of one rectangular pattern, there is no electrical problem. In addition, since the opening area of a contact hole becomes large, this substitution can ensure a reliable electrical connection like providing a plurality of contact holes.

In addition, the plurality of rectangular patterns 11, 12, 13 are arranged so that the long sides of each rectangular pattern are adjacent to each other, and the positions of the top and bottom of each long side are aligned. In addition, the arrangement of such rectangular patterns makes it possible to narrow the intervals between the opening patterns 21, 22, and 23 of the contact holes in the photomask pattern 20, as described later. The spacing of the contact holes 11, 12, and 13 in the design circuit pattern 10 is also narrowed, and the area of the entire circuit pattern is also reduced.

In accordance with the change of the design circuit pattern, the conventional photomask pattern 200 is also changed to the photomask pattern 20 according to the first embodiment of the present invention. First, the square opening patterns 21A, 21B, 22A, 22B, 23A, and 23B on the photomask are changed to the rectangular opening patterns 21, 22, and 23. As shown in FIG. In the rectangular opening pattern, since the light intensity of the side lobe is low in comparison with the case of the square opening pattern, the degree of deformation of the transfer pattern by the side lobe can be reduced. Therefore, in order to avoid the influence of side lobes, it is possible to further reduce the opening pattern spacing required for 2f or more.

In addition, since the plurality of rectangular opening patterns on the photomask are opposed to the long sides and are arranged to match the positions of both ends of the long sides, the correction of the pattern on the photomask by the OPC, which will be described later, can be performed relatively easily as such. have. In this case, therefore, it is possible to shorten the distance MS between the opening patterns 21, 22, and 23 on the photomask from the distance MD1 not affected by the optical proximity effect, on the premise of performing OPC processing. Done. As a result, each pattern interval can be reduced to f, for example. In the final pattern on the photomask, OPC processing is applied to this. The reduction in the pattern spacing on the photomask enables the reduction in the spacing of the contact holes 11, 12, 13 in the design circuit pattern 10.

Therefore, according to the pattern designing method according to the first embodiment, it is possible to form a transfer pattern in accordance with the design pattern on the wafer. It is also possible to further reduce the pattern area on the wafer.

The pattern dimensions on the wafer and the pattern dimensions on the mask are not particularly limited, but the rectangular contact hole openings on the photomask are preferably at least shaped to suppress deformation of the transfer pattern due to side lobes. Therefore, for example, if the short side is f, the long side is preferably in the range of 1.2f to 4f. For example, when the short side is 150 nm to 200 nm, the pattern design method according to the present embodiment is effective.

(2nd Example)

Fig. 2 is a diagram showing a part of the pattern on the photomask by the pattern designing method according to the second embodiment of the present invention. The design circuit pattern also has a pattern similar to these patterns. Also in FIG. 2, the length of each of one side of a square pattern and the short side of a rectangular pattern is demonstrated to f and the long side of the rectangular pattern 14 similarly to FIG.

As shown in FIG. 2, in the pattern design method according to the second embodiment, a plurality of rectangular pattern contact holes 14a, 14b, 14c, and 14d and a contact hole opening pattern 16 of a square pattern are formed on the same photomask. ) Is interspersed, and when the position of the end part near each pattern does not match, the space | interval MS of each pattern and the pattern adjacent to it is deformed | transformed by the side lobe, deformation | transformation of a transfer pattern, or deformation | transformation of an optical proximity effect. This does not occur and is usually determined by the distance MD2 at which the pattern on the photomask can be transferred onto the wafer.

In the case where the aperture patterns are interspersed in this way, since the correct pattern correction is difficult by OPC processing on the pattern on the photomask, the distance MS between the patterns is determined so as not to cause deformation of the transfer pattern due to the optical proximity effect in advance. Thus, the design pattern is accurately transferred onto the wafer.

Deformation of the transfer pattern by the side lobe and deformation of the optical proximity effect do not occur, and the distance MD2 which can transfer the pattern on the photomask onto the wafer is generally a proximity effect from the adjacent pattern by optical simulation or experiment. It calculates from the value which does not produce the dimensional change by. For example, although shown in FIG. 2 as "2.5f or more", it is not limited to this value. For example, a value of 1.2f to 3f or more can be adopted.

On the other hand, as in the case of the rectangular opening patterns 21, 22, and 23 in the photomask 20 of FIG. In case of the simple and accurate OPC processing, the pattern interval MS is made shorter than the distance MD1 where no optical proximity effect occurs.

As described above, in the pattern design method of the second embodiment, when a plurality of rectangular and single or plural square contact hole opening patterns are mixed in a circuit pattern, each pattern interval MS is formed of two adjacent patterns. According to the shape and arrangement relationship, it is decided as the distance that can accurately transfer the pattern.

FIG. 3 is a table showing the pattern interval MS to be set for the shapes and arrangement conditions of two adjacent patterns by the pattern designing method according to the second embodiment. In the table of FIG. 3, the lengths of one side of the square pattern and the short side of the square pattern are f and the long side of the rectangular pattern is 2f, as in the above-described example.

As shown in the table of FIG. 3, for example, the second rectangular pattern (adjacent pattern) is adjacent to the first rectangular pattern (target pattern), and the long side of the first rectangular pattern and the long side of the second rectangular pattern face each other. When the position of the end of the long piece is aligned, the OPC process can be performed on the photomask pattern, so that the distance MS between the first rectangular pattern and the second rectangular pattern, for example, produces an optical proximity effect ( Set f to shorter than MD1). However, when it is shifted from the position of the upper end lower end of the opposing long side, since correction by OPC process is difficult, it sets to distance MD2 which does not require OPC process, ie, 2.5f or more.

Further, when the second rectangular pattern (adjacent pattern) is adjacent to the first rectangular pattern (target pattern), and the long side of the first rectangular pattern and the short side of the second rectangular pattern are opposed to each other, When the long side and one side of the second square pattern are disposed to face each other, the pattern interval MS is set to a distance MD2 that does not require OPC processing, that is, 2.5 f or more.

In addition, when the second square pattern (adjacent pattern) is adjacent to the first square pattern (target pattern), the pattern interval MS is a distance where the deformation of the transfer pattern due to the light proximity effect and the side lobe of the exposure light does not occur. It is necessary to set it to (MD2). Therefore, for example, the space | interval of a 1st square and a 2nd square pattern is set to 2f or more. In this case, the pattern on the photomask can be transferred onto the resist with little deformation without performing OPC processing.

FIG. 4 is a diagram illustrating a circuit pattern of a contact hole designed by the design method of the second embodiment according to the table of FIG. 3. In the pattern on the corresponding photomask, the OPC process is performed in the region corresponding to the broken line portion. The pattern of this broken line portion may correspond to a pattern designed by the pattern design method described in the first embodiment.

By using the photomask produced according to the pattern design method of the second embodiment, it is possible to form a transfer pattern in accordance with the design pattern dimension on the wafer.

In the above description, the distance MD1 in which the optical proximity effect does not occur and the distance MD2 in which deformation of the transfer pattern due to the side lobe and the optical proximity effect do not occur are all rectangular when the adjacent patterns are rectangular. Are generally the same distance.

(OPC processing method)

A method of correcting a photomask pattern by OPC processing according to an embodiment of the present invention will be described. 5 is a flowchart showing a procedure for performing OPC processing.

As shown in FIG. 6, the object of OPC processing is a case where it arrange | positions so that the position of the upper end lower end of the some rectangular shape 18 of the same size same shape which is short side f may be f. The spacing S between each pattern is 2.5 f or less. Since the influence of the optical proximity effect can be excluded when the interval S is 2.5 f or more, the OPC process is not necessary.

Hereinafter, the procedure of OPC shown in FIG. 5 is demonstrated.

1) Step 101: First, in step 101, a sample necessary for obtaining correction data is produced. That is, as shown in FIG. 6, the rectangular pattern 18 which is a short side f is a pattern in which long sides adjoin, and a plurality of photomask patterns provided with the conditions with the space | interval S from f to 2.5f are prepared. And a photolithography process is actually performed, and the sample which transferred each pattern on the resist is produced.

2) Step 102: Measure the pattern dimension transferred to the sample produced in step 101, and create a graph plotting the transfer pattern dimension W formed on the sample with respect to the pattern interval S on the photomask as shown in FIG. 7. do. The graph shown here has shown the example of the short side dimension of the transferred rectangular pattern. As is apparent from this graph, in the case where the pattern spacing S is 2.5f or more, the design dimension f on the photomask and the transfer pattern dimensions on the resist coincide, but when the spacing S is shorter than this, it is transferred by the optical proximity effect. Pattern dimensions are wider than design dimensions.

For example, when the interval S is s2, the transfer pattern dimension is W1. Therefore, the difference W1-f from the design dimension f becomes necessary correction amount. When the interval S is s1, (W2-f) is a necessary correction amount.

The same graph is created also about the long side dimension of a rectangular pattern.

3) Step 103: Next, as shown in FIG. 8, a correction table is created based on the graph created in step 102. In addition, because of the state of drawing of the photomask, the value of the correction amount makes the minimum grid capable of mask drawing a minimum unit of correction. In addition, the correction amount is shown by the quantity added to the one side edge of a short side. Therefore, as shown in the table of FIG. 8, for example, the correction amount of the short side when the interval S is f or more and s1 or less is (W1-f) / 2. The long side correction amount is similarly determined from the graph created in step 102. In addition, since the long side direction fully isolate | separates the distance from the adjacent pattern here, compared with the correction amount required for a short side, the correction amount is small. For example, the correction amount of the long side in the case where the interval S is f or more and s1 or less is A.

4) Step 104: Of the pattern design data on the photomask, the correction amount required for the short side dimension and long side dimension of the photomask pattern is determined with reference to the correction table created in step 103 for the pattern to be subjected to the OPC process.

5) Step 105: Correction is performed on the pattern data on the photomask based on the correction amount determined in step 104 to obtain final pattern data on the photomask.

In this way, OPC processing is applied to part of the pattern data on the photomask. Thereafter, a mask pattern is drawn on the photomask using the drawing device based on this pattern data. In this way, it is possible to obtain a photomask capable of pattern transfer as designed.

As described above, when the pattern design method and the photomask of the semiconductor integrated circuit of the present invention are used, the design pattern can be accurately formed on the semiconductor device.

As mentioned above, although the opening pattern of a contact hole was demonstrated in the Example of this invention, it is applicable to design methods, such as another wiring pattern. In addition, although the example which used the square and rectangular opening pattern was demonstrated, some deformation | transformation may be added to a pattern in the range from which the same effect is acquired.

According to the photomask of the present invention, in the pattern arrangement region in which optical proximity effect correction is difficult, a distance between patterns in which deformation of the transfer pattern due to side lobe or optical proximity effect does not occur is ensured, and the pattern region in which the optical proximity effect can be corrected Since the optical proximity effect is corrected, the transfer pattern according to the design pattern can be formed on the wafer.

The semiconductor device of the present invention is designed using the pattern design method of the semiconductor integrated circuit of the present invention, and has a pattern according to the design value using the photomask of the present invention described above.

Claims (17)

In the pattern design method of a semiconductor integrated circuit, Forming a contact hole including a plurality of rectangular opening patterns and a plurality of square opening patterns, For some of the plurality of rectangular opening patterns, the long sides are adjacent to each other and coincide with the positions of both ends of the long sides, the distance between the patterns is arranged to be shorter than the distance between the square opening patterns, and optical proximity effect correction is performed. The pattern design method of the semiconductor integrated circuit which does not perform optical proximity effect correction about the part except a part of said some rectangular opening pattern. 2. The method of claim 1, wherein the distance between the patterns is shorter than the distance at which no optical proximity effect occurs in the exposure process. delete In the pattern design method of a semiconductor integrated circuit, When the plurality of rectangular opening patterns and the plurality of square opening patterns are mixed contact holes, In the region where the opposite ends of the sides of the adjacent opening patterns do not match, the distance between the opening patterns is determined by the side lobe of the exposure light and the light proximity effect in the transfer pattern produced when the corresponding opening pattern is formed on the photomask. The distance at which deformation of the transfer pattern does not occur, and optical proximity effect correction is not performed. In a region in which a plurality of rectangular opening patterns are adjacent so that their long sides face each other, and both ends of the long sides adjacent to each other are aligned, the distance between each opening pattern is used when a corresponding opening pattern is formed on the photomask. The pattern design method of the semiconductor integrated circuit which shortens the distance which does not produce an optical proximity effect to the produced transfer pattern, and performs optical proximity effect correction. In the photomask used for manufacture of the semiconductor device containing the semiconductor integrated circuit designed by the pattern design method of the semiconductor integrated circuit of Claim 1, A contact hole including a plurality of rectangular opening patterns and a plurality of square opening patterns is formed, For some of the plurality of rectangular opening patterns, the long sides are adjacent to each other and the positions of both ends of the long sides are coincident with each other, and the distance between the patterns is shorter than the distance between the square opening patterns and optical proximity effect correction is performed. , A photomask in which optical proximity effect correction is not performed on a portion except a part of the plurality of rectangular opening patterns. 6. The photomask of claim 5, wherein the distance between the patterns is shorter than a distance at which no light proximity effect occurs in the exposure process. In the photomask used for manufacture of the semiconductor device containing the semiconductor integrated circuit designed by the pattern design method of the semiconductor integrated circuit of Claim 4, As a plurality of rectangular and square opening patterns, positions of both ends of the sides of adjacent square and rectangular opening patterns do not coincide, and the distance between the opening patterns is such that the deformation of the transfer pattern due to side lobes of the exposure light or the light proximity effect does not occur. A plurality of patterns that are set and no optical proximity effect correction is performed, A plurality of rectangular opening patterns comprising a plurality of rectangular opening patterns each of which is arranged so that the long sides face each other, and the ends of adjacent long sides are aligned, and the distance between the opening patterns is set to be shorter than the distance where no optical proximity effect occurs and the optical proximity effect correction is performed. A photomask containing a pattern of. The method of claim 5, And the photo mask is a halftone phase shift mask. The method of claim 6, And the photo mask is a halftone phase shift mask. The method of claim 7, wherein And the photo mask is a halftone phase shift mask. A semiconductor device comprising a semiconductor integrated circuit designed by the method for designing a semiconductor integrated circuit according to claim 1. A semiconductor device comprising a semiconductor integrated circuit designed by the method for designing a semiconductor integrated circuit according to claim 2. delete A semiconductor device comprising a semiconductor integrated circuit designed by the method for designing a semiconductor integrated circuit according to claim 4. In the mask pattern correction method of a semiconductor integrated circuit, Forming a contact hole including a plurality of rectangular opening patterns and a plurality of square opening patterns, For some of the plurality of rectangular opening patterns, the long sides are adjacent to each other and coincide with the positions of both ends of the long sides, the distance between the patterns is arranged to be shorter than the distance between the square opening patterns, and optical proximity effect correction is performed. The mask pattern correction method of the semiconductor integrated circuit which does not perform optical proximity effect correction on the part except a part of said some rectangular opening pattern. 16. The method of claim 15, wherein the distance between the patterns is shorter than the distance at which no optical proximity effect occurs in the exposure process. In the mask pattern correction method of a semiconductor integrated circuit, When the plurality of rectangular opening patterns and the plurality of square opening patterns are mixed contact holes, In the region where the opposite ends of the sides of the adjacent opening patterns do not match, the distance between the opening patterns is determined by the side lobe of the exposure light and the light proximity effect in the transfer pattern produced when the corresponding opening pattern is formed on the photomask. The distance at which deformation of the transfer pattern does not occur, and optical proximity effect correction is not performed. In a region in which a plurality of rectangular opening patterns are adjacent so that their long sides face each other, and both ends of the long sides adjacent to each other are aligned, the distance between each opening pattern is used when a corresponding opening pattern is formed on the photomask. The mask pattern correction method of the semiconductor integrated circuit which shortens the distance which does not produce an optical proximity effect to the produced transfer pattern, and performs optical proximity effect correction.