KR100398746B1 - Photoresist composition for color filter containing low molecular silicon compound and manufacturing method thereof - Google Patents

Photoresist composition for color filter containing low molecular silicon compound and manufacturing method thereof Download PDF

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KR100398746B1
KR100398746B1 KR10-1998-0033419A KR19980033419A KR100398746B1 KR 100398746 B1 KR100398746 B1 KR 100398746B1 KR 19980033419 A KR19980033419 A KR 19980033419A KR 100398746 B1 KR100398746 B1 KR 100398746B1
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compound
photoresist composition
uniformity
formula
composition
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KR10-1998-0033419A
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KR20000014164A (en
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차혁진
황윤일
김진석
이철우
김성현
최동창
이재환
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주식회사 엘지화학
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds

Abstract

본 발명은 코팅의 균일성을 높이고 막 표면의 분균일을 최소화하고, 특별히 현상시에 공정 마진을 조절할 수 있는 아래 일반식 (I), (II) 또는 (III)으로 표시되는 실리콘 화합물을 포함하는 새로운 안료 분산 포토레지스트(PDPR) 조성물을 제공한다.The present invention comprises a silicone compound represented by the general formula (I), (II) or (III) below, which can improve the uniformity of the coating, minimize the uniformity of the surface of the film, and control the process margin during development. Provided are new pigment dispersion photoresist (PDPR) compositions.

<일반식 I><Formula I>

<일반식 II><Formula II>

<일반식 III><Formula III>

Description

저분자 실리콘 화합물을 포함하는 칼라 필터용 포토레지스트 조성물 및 그 제조 방법Photoresist composition for color filters containing low molecular weight silicone compound and method for producing same

본 발명은 포토레지스트 조성물에 관한 것이다. 본 발명은 특히 저분자 실리콘 화합물을 포함하는 칼라 필터용 포토레지스트 조성물 및 그 제조 방법에 관한 것이다.The present invention relates to a photoresist composition. The present invention relates in particular to a photoresist composition for color filters comprising a low molecular weight silicone compound and a method for producing the same.

액정 디스플레이(LCD)용 칼라 필터의 재료들은 광감도가 높고 미세 패턴 형성시 내열성 및 내광성등이 우수해야 하며 투과율이 높고 색의 재현성이 좋아야 한다. 이에 따라 안료 분산형 포토레지스트(pigment dispersed photoresist : PDPR) 재료도 더욱 뛰어난 분산성과 코팅성을 갖는 것이 중요하며, 특히 코팅시 필름의 균일성이 전체 칼라 필터 제조 과정 중에서 큰 비중을 차지한다. 현재 사용되는 포토레지스트 재료의 조성을 바꾸어 필름의 균일성을 얻고자 하는 노력이 계속 되어 왔다. 더구나, 실제로 칼라 필터를 제조할 때, 기본 포토레지스트의 특성을 변화 시키지 않는 범위 내에서 공정상의 현상 마진(margin)을 조절하는 것이 매우 중요한 문제로 지적되어 왔다. 지금까지는 일정한 포토레지스트의 조성을 사용하여 칼라 필터를 제조할 때, 제조 공정에서 현상 시간을 조절하려면, 같은 특성의 패턴을얻기 위해서 포토레지스트 조성물 자체를 새롭게 배합(formulation)해야 했다. 그러나, 공정 마진을 조절하기 위해 전체 조성물의 비율을 바꾸는 것은 쉽지 않으며 상당한 시간과 실험을 요구하는 일이다.The materials of the color filter for liquid crystal display (LCD) should have high photosensitivity, excellent heat resistance and light resistance when forming fine patterns, high transmittance and good color reproducibility. Accordingly, it is important for pigment dispersed photoresist (PDPR) materials to have more excellent dispersibility and coating property, and in particular, the uniformity of the film during coating is a large part of the overall color filter manufacturing process. Efforts have been made to change the composition of photoresist materials currently used to achieve uniformity of the film. Moreover, when actually manufacturing color filters, it has been pointed out that it is very important to control the process development margin within a range that does not change the properties of the basic photoresist. Up to now, when manufacturing a color filter using a constant photoresist composition, in order to control the development time in the manufacturing process, the photoresist composition itself had to be newly formulated in order to obtain a pattern of the same characteristics. However, changing the proportion of the total composition to control process margins is not easy and requires considerable time and experimentation.

본 발명에서는 이러한 요구에 적합하도록, 종래 기술에서 사용되고 있는 포토레지스트의 조성비를 유지하는 범위 내에서 공정상의 마진을 조절하고 동시에 코팅된 필름의 균일성을 증대 시키기 위해, 실리콘을 함유한 저분자 물질을 투입하는 새로운 안료 분산 포토 레지스트(PDPR)의 조성에 관하여 설명한다.In the present invention, a low molecular weight material containing silicon is added to adjust the process margin and to increase the uniformity of the coated film within the range of maintaining the composition ratio of the photoresist used in the prior art to meet this requirement. The composition of the novel pigment dispersed photoresist (PDPR) will be described.

일반적으로 도료에서 코팅시 막의 표면 장력이 클 경우 색 분리, 오렌지 필, 버나드 셀 등의 표면 결함을 가져오는데, 실리콘 첨가제는 도료의 표면 장력을 감소시킴으로써 표면 불량을 줄이는 성질이 있어서 소포제로서 사용되었다. 특히 분자량이 작은 실리콘 첨가제가 도입되는 조성물과 상용성이 좋아서 표면의 성질을 향상시키는데 사용되었다. 안료 분산형 칼라 필터 레지스트의 조성물에서 기판과의 접착력 향상 증진제로 다음과 같은 실리콘 첨가제를 사용하는 것(미국 특허 제5,368,976호, 유럽 특허 제0645678A1호)이 알려져 있다.In general, when the surface tension of the film during coating in the coating is large, color defects, orange peel, Bernard cell, etc., surface defects are brought about, the silicone additive has been used as an antifoaming agent to reduce the surface defect by reducing the surface tension of the paint. In particular, it has been used to improve the properties of the surface because it is compatible with the composition in which a small molecular weight silicone additive is introduced. It is known to use the following silicone additives as adhesion enhancers with substrates in compositions of pigment dispersed color filter resists (US Pat. No. 5,368,976, EP 0645678A1).

비닐트리메톡시실란, 비닐트리에톡시실란, 비닐트리스(2-메톡시에톡시)실란, N-(2-아미노에틸)3-아미노프로필메틸디메톡시실란, N-(2-아미노에틸)3-아미노프로필트리메톡시실란, 3-아미노프로필트리에톡시실란, 3-글리시독시프로필트리메톡시실란, 3-글리시독시프로필메틸디메톡시실란, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란, 3-클로로프로필메틸디메톡시실란, 3-클로로프로필트리메톡시실란, 3-메타크릴옥시프로필트리에톡시실란, 3-메르캅토프로필트리메톡시실란.Vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N- (2-aminoethyl) 3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) 3 -Aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) Ethyltrimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane.

그러나 위의 실리콘 첨가제들은 기판과의 접착력을 향상시키기 위한 목적으로 사용되었고, 칼라 레지스트 조성물 중의 수지나 다기능성 모노머와 화학적 반응을 일으켜 패턴 형성시 안정성을 향상시키는 기능은 없었다.However, the above silicone additives were used for the purpose of improving adhesion to the substrate, and did not function to improve the stability during pattern formation by chemical reaction with the resin or the multifunctional monomer in the color resist composition.

본 발명은 코팅의 균일성을 높이고 막 표면의 분균일을 최소화하고, 특별히 현상시에 공정 마진을 조절할 수 있는 아래 일반식 (I), (II) 또는 (III)으로 표시되는 실리콘 화합물을 포함하는 새로운 안료 분산 포토레지스트(PDPR) 조성물을 제공한다.The present invention comprises a silicone compound represented by the general formula (I), (II) or (III) below, which can improve the uniformity of the coating, minimize the uniformity of the surface of the film, and control the process margin during development. Provided are new pigment dispersion photoresist (PDPR) compositions.

<일반식 I><Formula I>

<일반식 II><Formula II>

<일반식 III><Formula III>

공중합체와 다기능성 아크릴 모노머, 광개시제, 그리고 적, 녹, 청색 안료등을 분산시켜서 막의 균일성을 향상시키고 현상시 공정 마진을 조절할 수 있도록 실리콘에 수소가 직접 결합된 저분자 실리콘 첨가제를 사용하는 새로운 조성의 감광성 칼라레지스트를 제공한다.New composition using low molecular weight silicone additives directly bonded to hydrogen to disperse copolymers, multifunctional acrylic monomers, photoinitiators, and red, green and blue pigments to improve film uniformity and control process margins during development It provides a photosensitive color resist of.

본 발명의 실리콘 첨가제는 광개시제에 의해 활성을 다기능성 모노머와 화학적 반응을 통하여 패턴의 안정성을 향상시켜 현상 공정의 마진을 충분히 증가 시킬 수 있으며, 동시에 패턴 표면의 불균일성을 상당히 향상시킬 수 있다.The silicone additive of the present invention can improve the stability of the pattern through chemical reaction with the multifunctional monomer active by the photoinitiator to sufficiently increase the margin of the development process, and at the same time can significantly improve the nonuniformity of the pattern surface.

자세한 발명의 내용은 다음과 같다.Details of the invention are as follows.

A. 바인더 수지(binder resin)의 합성A. Synthesis of Binder Resin

1. 벤질 메타크릴레이트(BzMA : benzyl methacrylate), 메타크릴산(MAA : methacrylic acid), 히드록시에틸 메타크릴레이트(hydroxyethyl methacrylate)를 단량체로 하여 PGMEA(propylene glycol methyl ether acetate)에 20 % 농도로 녹여 질소 기체로 탈기(degassing)한다.1.Benzyl methacrylate (BzMA: benzyl methacrylate), methacrylic acid (MAA: methacrylic acid), and hydroxyethyl methacrylate (hydroxyethyl methacrylate) as monomers in PGMEA (propylene glycol methyl ether acetate) at 20% concentration It is dissolved and degassed with nitrogen gas.

2. 이 단량체 용액에 AIBN을 0.5 g 사용하여 100 ℃에서 5시간 중합시킨다.2. The monomer solution was polymerized at 100 DEG C for 5 hours using 0.5 g of AIBN.

위의 단량체 조성에서, BzMA의 비율은 50 %∼80 %, MAA의 비율은 5 %∼40 %, 그리고 히드록시에틸 메타크릴레이트의 비율은 5 %∼40 %가 적당하다. 바인더 공중합체의 분자량은 15,000∼60,000 이고, 다분산 지수(polydispersity index)는 2.4 이하가 적당하다.In the above monomer composition, the proportion of BzMA is 50% to 80%, the ratio of MAA is 5% to 40%, and the proportion of hydroxyethyl methacrylate is 5% to 40%. The molecular weight of the binder copolymer is 15,000 to 60,000, and the polydispersity index is preferably 2.4 or less.

바인더 제조에 사용되는 단량체로는 불포화 에틸렌카르복실(설포닉)산 계로 아크릴산, MAA, 크로토닉산, 이타콘산, 말레인산, 푸마르산, 모노메틸말레이트, 모노메틸 푸마레이트, 이소프렌설포닉산, 스티렌설포닉산 등이 있고 이와 공중합 할 수 있는 단량체로는α-메틸스티렌, 비닐톨루엔, MMA, MA, EMA, EA, BuMA, BuA, HEMA, BzMA, BzA, 카르복실산비닐에스테르(비닐 아세테이트, 비닐 프로피오네이트), 비닐 시아니드(메타크릴로니트릴,α-클로로아크릴로니트릴) 불포화 에틸렌카르복실산과 아미노알킬 에스테르(아미노에틸-아크릴레이트), 불포화 지방성 글리시딜 에스테르(글리시딜 메타크릴레이트) 등이 있고, 종단(메타)아크릴로일 그룹을 가지는 매크로 단량체들로는 종단(메타)아크릴레이트 그룹을 가지는 폴리스티렌, 종단(메타)아크릴로일 그룹을 가지는 폴리메틸(메타)아크릴레이트, 종단(메타)아크릴로일 그룹을 가지는 폴리부틸(메타)아크릴레이트, 종단(메타)아크릴로일 그룹을 가지는 포리실리콘 등이 있다. 특별한 예들로는 MMA/MAA, MMA/스티/글리시딜 MA, BzA/MAA/매크로머, MMA/스티, BzMA/MAA/스티(65/25/10), BzMA/MAA/폴리스티매크로머 등이 있다.Monomers used in the manufacture of binders are unsaturated ethylene carboxylic (sulphonic) acids based on acrylic acid, MAA, crotonic acid, itaconic acid, maleic acid, fumaric acid, monomethylmaleate, monomethyl fumarate, isoprensulphonic acid, styrenesulphonic acid Monomers copolymerizable therewith, such as α -methylstyrene, vinyltoluene, MMA, MA, EMA, EA, BuMA, BuA, HEMA, BzMA, BzA, and carboxylic acid vinyl esters (vinyl acetate, vinyl propionate). ), Vinyl cyanide (methacrylonitrile, α -chloroacrylonitrile) unsaturated ethylenecarboxylic acid and aminoalkyl ester (aminoethyl-acrylate), unsaturated fatty glycidyl ester (glycidyl methacrylate), and the like. And macromonomers having a terminal (meth) acryloyl group include polystyrenes having a terminal (meth) acrylate group and a terminal (meth) acryloyl group. Polymethyl (meth) acrylate, polybutyl (meth) acrylate having a terminal (meth) acryloyl group, and polysilicon having a terminal (meth) acryloyl group. Specific examples include MMA / MAA, MMA / sty / glycidyl MA, BzA / MAA / macromer, MMA / styy, BzMA / MAA / styy (65/25/10), BzMA / MAA / polymethylmacromer, etc. have.

통상 사용되어지는 다기능 단량체로서, 기능성(메타)아크릴레이트로 폴리에틸렌 글리콜모노(메타)아크릴레이트, 폴리프로필렌 글리콜모노(메타)아크릴레이트, 페녹시에틸(메타)아크릴레이트 등이 있고, 다기능성(메타)아크릴레이트로서는 폴리에틸렌 글리콜 디(메타)아크릴레이트, 폴리프로필렌 글리콜 디(메타)아크릴레이트, 트리메틸롤 에탄 트리아크릴레이트, 트리메틸롤 프로판 트리(메타)아크릴레이트, 네오펜틸 글리콜 디(메타)아크릴레이트, 펜타에리스리톨 테트라(메타)아크릴레이트, 디펜타에리스리톨 헥사(메타)아크릴레이트(PENA), 헥산에디올 디(메타)아크릴레이트, 트리메틸프로판 트리(아크릴로일옥시프로필)에테르, 트리(아크릴로일옥시에틸)이소시아누레이트, 트리(아크릴로일옥시에틸)-시아누레이트, 글리세린 트리(메타)아크릴레이트가 있다.Examples of the multifunctional monomers commonly used include functional (meth) acrylates such as polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, phenoxyethyl (meth) acrylate, and the like. As the acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, trimethylol ethane triacrylate, trimethylol propane tri (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate (PENA), hexanediol di (meth) acrylate, trimethylpropane tri (acryloyloxypropyl) ether, tri (acryloyloxy Ethyl) isocyanurate, tri (acryloyloxyethyl) -cyanurate, glycerin tri (meth) acrylic A.

광중합개시제로는 카르보늄 화합물계로 디아세틸, 벤질, 벤조인, 2-히드록시-2-메틸-1-페닐프로판-1-온, 1-(4-이소프로필페닐)-2-히드록시-2-메틸프로판-1-온, 4-(2-히드록시에톡시)페닐-2-(히드록시-2-프로필)케톤, 1-히드록시클로로헥실 케톤, 2,2-디메톡시-2-페닐아세토페논, 2-메틸[4-(메틸티오)페닐]-2-모폴리노-1-프로판-1-온, 4,4'-비스(디메틸아미노)벤조-페논, 4,4'-비스(디에틸아미노) 벤조페논, 2,4-디에틸티옥산톤, 3,3-디메틸-4-메톡시벤조페논이 있고 아조, 아지드 화합물로는 아조비스부티로니트릴, 디아조늄, 4-아지도벤잘아세토페논, 4-아지도벤잘아세톤, 아지도피렌, 4-아지도페닐아민, 4-디아지도-4'-메톡시디페닐아민, 4-디아조-3'-메톡시디-페닐아민이 있고, 유기황 화합물로는 메르캅탄 디설파이드, 과산화물로서 디에틸에타 페록시드가 있다. 트리할로메탄 화합물계 종류로는 트리클로로메틸-s-트리아진, 2-(2'-클로로페닐)-4,6-비스(트리클로로메틸)-s-트리아진, 2-(p-메톡시페닐)-4,6,-비스(트리클로로메틸)-s-트리아진, 2-페닐-4,6-비스(클로로메틸)-s-트리아진, 2-(p-클로로페닐)-4,6-비스(트리클로로메틸)-s-트리아진, 2-(4'-메톡시-1-나프틸)-4,6-비스(트리클로로메틸)-s-트리아진이 있고, 이미다졸계로는 2-(2,3-디클로로페닐)-4,5-디페닐이미다졸 2분량체가 있다.Examples of the photopolymerization initiator include diacetyl, benzyl, benzoin, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1- (4-isopropylphenyl) -2-hydroxy-2 based on carbonium compounds. -Methylpropan-1-one, 4- (2-hydroxyethoxy) phenyl-2- (hydroxy-2-propyl) ketone, 1-hydroxychlorohexyl ketone, 2,2-dimethoxy-2-phenyl Acetophenone, 2-methyl [4- (methylthio) phenyl] -2-morpholino-1-propan-1-one, 4,4'-bis (dimethylamino) benzo-phenone, 4,4'-bis (Diethylamino) benzophenone, 2,4-diethyl thioxanthone, 3,3-dimethyl-4-methoxybenzophenone, and azo and azide compounds include azobisbutyronitrile, diazonium, 4- Azidobenzalacetophenone, 4-azidobenzalacetone, azidopyrene, 4-azidophenylamine, 4-diazido-4'-methoxydiphenylamine, 4-diazo-3'-methoxydi-phenylamine Examples of the organosulfur compound include mercaptan disulfide and diethyl eta peroxide as a peroxide. Trichloromethane compounds include trichloromethyl-s-triazine, 2- (2'-chlorophenyl) -4,6-bis (trichloromethyl) -s-triazine and 2- (p-meth Methoxyphenyl) -4,6, -bis (trichloromethyl) -s-triazine, 2-phenyl-4,6-bis (chloromethyl) -s-triazine, 2- (p-chlorophenyl) -4 , 6-bis (trichloromethyl) -s-triazine, 2- (4'-methoxy-1-naphthyl) -4,6-bis (trichloromethyl) -s-triazine, and imidazole series Examples thereof include 2- (2,3-dichlorophenyl) -4,5-diphenylimidazole dimer.

안료로서는 적색 안료 97, 122, 149, 168, 177,180, 192, 215, 황색 안료 83, 139, 녹색 안료 7,36, 청색 안료 15:1, 15:3, 15:4, 15:6, 22, 60, 64, 보라색 안료 23 등이 있다.As the pigment, red pigment 97, 122, 149, 168, 177, 180, 192, 215, yellow pigment 83, 139, green pigment 7,36, blue pigment 15: 1, 15: 3, 15: 4, 15: 6, 22, 60, 64, purple pigment 23 and the like.

사용되는 용제로는 알코올 종류로 메탄올, 에틸알콜, n-프로판올, 이소-프로판올 등이 있고 셀로솔브 종류로는 메틸 셀로솔브, 에틸 셀로솔브, 카르비톨형으로는 디에틸렌 글리콜메틸에테르, 디에틸렌 글리콜 에틸 에테르, 에테르계로는 에틸아세테이트, 부틸아세테이트, 메틸메톡시 프로피오네이트, 에틸에톡시 프로피오네이트, 에틸아세테이트, 프로필렌글리콜 메틸에테르 아세테이트 등이 있다. 케톤계로는 아세톤, 메틸이소부틸케톤, 시클로헥산온 등이 있으며 셀로솔브 아세테이트로는 메틸 셀로솔브 아세테이트, 에틸셀로솔브 아세테이트, 카르비톨 아세테이트계로는 디에틸렌 글리콜 메틸(또는 에틸) 아세테이트 등이 있다. 에테르 종류로는 디에틸 에테르, 에틸렌 글리콜 디메틸 에테르, 디글림(diglyme), THF가 있고 비 양성자성(aprotic) 아미드로는 DMF, N,N-디메틸아세트아미드, NMP, 락톤으로는 t-부티로락톤, 방향족 탄화수소로는 벤젠, 톨루엔, 실렌, 나프탈렌이 있고 포화 탄화수소로는 헥산, 헵탄, n-옥탄 등이 있다.Solvents used include alcohols such as methanol, ethyl alcohol, n-propanol, iso-propanol, and cellosolves such as methyl cellosolve, ethyl cellosolve, and carbitol diethylene glycol methyl ether and diethylene glycol. Ethyl ether and ether type include ethyl acetate, butyl acetate, methyl methoxy propionate, ethyl ethoxy propionate, ethyl acetate, propylene glycol methyl ether acetate and the like. Ketones include acetone, methyl isobutyl ketone, cyclohexanone, and the like. Cellosolve acetates include methyl cellosolve acetate, ethyl cellosolve acetate, and carbitol acetate-based diethylene glycol methyl (or ethyl) acetate. Ether types include diethyl ether, ethylene glycol dimethyl ether, diglyme, THF, aprotic amides as DMF, N, N-dimethylacetamide, NMP, lactone as t-butyro Lactones and aromatic hydrocarbons include benzene, toluene, silane and naphthalene, and saturated hydrocarbons include hexane, heptane, n-octane and the like.

실리콘 첨가제 중 본 발명의 목적으로 사용될 수 있는 것은 규소 화합물 1,1,3,3-테트라알킬 디실록산(R=C1-C3), 1,1,4,4-테트라알킬 디실에틸렌(R=C1-C3), 1,1,3,3,5,5,7,7-옥타알킬 테트라실옥산(R=C1-C3)등 실리콘에 수소기가 직접 연결되어 있는 구조를 갖는 분자량이 100∼1,000 사이의 것들이다.Among the silicone additives that may be used for the purposes of the present invention are silicon compounds 1,1,3,3-tetraalkyl disiloxane (R = C1-C3), 1,1,4,4-tetraalkyl disilethylene (R = C1 -C3), 1,1,3,3,5,5,7,7-octaalkyl tetrasiloxane (R = C1-C3), molecular weight having a structure in which a hydrogen group is directly connected to silicon, between 100 and 1,000 Of things.

B. 포토 레지스트 조성물 제조B. Photoresist Composition Preparation

실시예 1에서 합성한 바인더 수지를 이용하여 칼라 레지스트 물질을 제조한다. 전체 레지스트 조성 중 용매를 제외한 고형분은 중량비로 약 10∼40 %, 유기안료는 약 5∼35 %, 수지는 약 5∼30 % 가 적당하다. 광가교성 다기능 아크릴모노머는 약 1∼10 %, 그리고 광개시제는 약 0.1∼5 % 가 적당하다. 위의 구성 요소들을 비드 밀(bead mill)이나 3중 롤밀(roll mill)에 넣고 약 3∼20 시간 동안 섞으면서 안료를 분산시킨다. 비드 크기는 직경 0.3∼3 mm를 사용하고 다듬은 후 용액을 10 미크론 필터로 거른 후 약 10일 동안 자외선을 차단한 방에 보관하면서 분산 상태의 안정성을 관찰한 결과 안정한 분산 상태를 유지하였다.A color resist material was prepared using the binder resin synthesized in Example 1. About 10 to 40% by weight of the solid content except the solvent in the total resist composition, about 5 to 35% of the organic pigment, and about 5 to 30% of the resin are suitable. About 1 to 10% of photocrosslinkable multifunctional acrylic monomer and about 0.1 to 5% of photoinitiator are suitable. The above components are placed in a bead mill or triple roll mill and the pigment is dispersed while mixing for about 3 to 20 hours. Bead size was 0.3 to 3 mm in diameter, and after filtering, the solution was filtered with a 10 micron filter and stored in a UV-blocked room for about 10 days.

규소 화합물을 첨가하는 실험에서는, 안정된 용액에 첨가하여 교반한다. 이 용액을 유리에 스핀 코팅하여 약 70∼100 ℃로 2∼10분 동안 가열하면 두께가 약 2 mm되는 동형의 한 필름이 형성된다. 이 필름을 포토마스크를 이용하여 고압 수은 램프에 100∼300mJ/㎠의 에너지로 노광시킨 후 패턴을 알칼리 용액으로 현상하고, 탈이온수로 세척한 다음, 150∼200 ℃에서 약 40∼60 분간 가열한다. 최종 형성된 필름의 두께를 알파-스텝500으로 측정했고, 표면의 상태는 광학 현미경으로 관찰한다.In the experiment which adds a silicon compound, it adds and stirred to a stable solution. The solution is spin coated onto glass and heated to about 70-100 ° C. for 2-10 minutes to form a homogeneous film about 2 mm thick. After exposing the film to a high pressure mercury lamp using a photomask with an energy of 100 to 300 mJ / cm 2, the pattern is developed with an alkaline solution, washed with deionized water, and then heated at 150 to 200 ° C. for about 40 to 60 minutes. . The thickness of the final formed film was measured with Alpha-Step 500, and the state of the surface was observed with an optical microscope.

<비교예 1>Comparative Example 1

감광성 물질Photosensitive material

위의 경우, 패턴 형성시 적정 현상 시간은 pH 12.0의 알칼리 용액에 대하여 평균 30초 정도 걸렸다. 필름의 두께는 평균 2.3 mm 이고 평면 두께 변화는 약 3.0 % (0.16 mm)의 값을 나타냈다. 표면의 균일성은 약 0.03 mm였다. 초과 현상 시간(over develop time)이 20초를 넘게되면 형성된 패턴 자체의 크기가 변하고 표면의 균일성이 급격히 증가하여 결함이 생기기 시작했다.In the above case, the proper development time during pattern formation took an average of about 30 seconds for an alkaline solution of pH 12.0. The thickness of the film averaged 2.3 mm and the planar thickness change showed a value of about 3.0% (0.16 mm). The uniformity of the surface was about 0.03 mm. When the over develop time exceeded 20 seconds, the size of the formed pattern itself changed, and the uniformity of the surface rapidly increased, and defects began to occur.

<실시예 2><Example 2>

감광성 물질Photosensitive material

위의 공식에서 규소 화합물을 첨가하여 비교예 1과 같은 방법으로 필름을 형성했다. 필름은 줄무늬 없는 막을 형성했고, 평균 코팅 두께가 2.24 mm이며, 평면 두께 변화가 0.5% (0.022 mm), 균일성은 약 0.01 mm의 값을 나타내 매우 향상된 성질을 보였다. 패턴 형성시 현상 시간은 pH 12.0 에서 평균 45초를 나타냈다. 초과 현상 시간이 90초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the above formula, a silicon compound was added to form a film in the same manner as in Comparative Example 1. The film formed a stripe-free film with an average coating thickness of 2.24 mm, a planar thickness change of 0.5% (0.022 mm), and uniformity of about 0.01 mm, showing very improved properties. The development time in pattern formation showed an average of 45 seconds at pH 12.0. Even after 90 seconds of over developing time, the shape of the pattern was stable and the uniformity of the surface was not significantly different.

<실시예 3><Example 3>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.23 mm, 평면의 두께 변화는 약 0.5 % (0.023 mm)이고, 표면의 균일성은 약 0.01 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 57초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 110초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.23 mm, a planar thickness change of about 0.5% (0.023 mm), and a uniformity of surface showing a value of about 0.01 mm. The developing time was about 57 seconds for the developer at pH 12.0. No streaks could be observed on the surface. Even after the over developing time was over 110 seconds, the shape of the pattern was stable and the uniformity of the surface was not significantly different.

<실시예 4><Example 4>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.24 mm, 평면 두께 변화는 약 0.55 % (0.024 mm)이고, 표면의 균일성은 약 0.011 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 62초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 105초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.24 mm, a planar thickness change of about 0.55% (0.024 mm), and a uniformity of the surface showing a value of about 0.011 mm. The developing time was about 62 seconds for the developer at pH 12.0. No streaks could be observed on the surface. Even when the over developing time was over 105 seconds, the pattern was stable and the uniformity of the surface was not significantly different.

<실시예 5>Example 5

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.16 mm, 평면 두께 변화는 약 0.47% (0.022 mm)이고, 표면의 줄무늬는 약 0.012 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 51초를 나타내었고 오히려 현상 시간이 다소 감소 되었다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간은 80초까지 경과했을 경우 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.16 mm, a planar thickness change of about 0.47% (0.022 mm), and a stripe on the surface showing a value of about 0.012 mm. The development time of the developer at pH 12.0 was about 51 seconds, but the development time was slightly reduced. No streaks could be observed on the surface. The overdeveloping time was stable until 80 seconds, and the uniformity of the surface was not significantly different.

<실시예 6><Example 6>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 코팅 두께가 2.23 mm이며, 평면 두께 변화 0.5% (0.023 mm), 균일성은 약 0.011 mm의 값을 나타냈다. 패턴 형성시 현상 마진은 pH 12.0 에서 평균 43초를 나타냈다. 초과 현상 시간이 87초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average coating thickness of 2.23 mm, a planar thickness change of 0.5% (0.023 mm), and uniformity of about 0.011 mm. The development margin at the time of pattern formation was an average of 43 seconds at pH 12.0. Even after the over developing time of 87 seconds, the shape of the pattern was stable, and the uniformity of the surface was not significantly different.

<실시예 7><Example 7>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.23 mm, 평면 두께 변화는 약 0.5 % (0.023 mm)이고, 표면의 균일성은 약 0.009 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 55초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 114초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.23 mm, a planar thickness change of about 0.5% (0.023 mm), and a uniformity of surface showing a value of about 0.009 mm. The developing time was about 55 seconds for the developer at pH 12.0. No streaks could be observed on the surface. Even after the over developing time of 114 seconds, the shape of the pattern was stable, and the uniformity of the surface was not significantly different.

<실시예 8><Example 8>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.22 mm, 평면 두께 변화는 약 0.5% (0.022 mm)이고, 표면의 균일성은 약 0.01 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상시간이 약 61초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 125초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.22 mm, a planar thickness change of about 0.5% (0.022 mm), and a uniformity of surface showing a value of about 0.01 mm. The developing time of the developer at pH 12.0 was about 61 seconds. No streaks could be observed on the surface. Even after the over developing time of 125 seconds, the shape of the pattern was stable, and the uniformity of the surface was not significantly different.

<실시예 9>Example 9

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.23 mm, 평면 두께 변화는 약 0.4 % (0.02 mm)이고, 표면의 평평성은 약 0.01 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 50초를 나타내 오히려 현상 시간이 다소 감소 되었다. 표면에서 줄무의를 관찰할 수 없었다. 초과 현상 시간은 86초를 경과할 때까지 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.23 mm, a planar thickness change of about 0.4% (0.02 mm), and a flatness of the surface showing a value of about 0.01 mm. The developing time was about 50 seconds for the developer of pH 12.0. No strips could be observed on the surface. The overdeveloping time was stable until the pattern passed 86 seconds, and there was no significant difference in the uniformity of the surface.

<실시예 10><Example 10>

감광성 물질Photosensitive material

같은 방법으로 얻어진 필름의 평균 코팅 두께가 2.2 mm 이며, 평면 두께의 변화가 0.45% (0.02 mm), 균일성은 약 0.01 mm의 값을 나타냈다. 패턴 형성시 현상 마진은 pH 12.0 에서 평균 43초를 나타냈다. 초과 현상 시간이 85초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.The average coating thickness of the film obtained by the same method was 2.2 mm, the change in plane thickness was 0.45% (0.02 mm), and the uniformity showed a value of about 0.01 mm. The development margin at the time of pattern formation was an average of 43 seconds at pH 12.0. Even after 85 seconds of over developing time, the shape of the pattern was stable and the uniformity of the surface was not significantly different.

<실시예 11><Example 11>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.23 mm, 평면 두께 변화는 약 0.45 % (0.022 mm)이고, 표면의 균일성은 약 0.01 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 56초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 110초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.23 mm, a planar thickness change of about 0.45% (0.022 mm), and a uniformity of surface showing a value of about 0.01 mm. The developing time was about 56 seconds for the developer at pH 12.0. No streaks could be observed on the surface. Even after the over developing time was over 110 seconds, the shape of the pattern was stable and the uniformity of the surface was not significantly different.

<실시예 12><Example 12>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.2 mm, 평면의 두께 변화는 약 0.5 % (0.022 mm)이고, 표면의 균일성은 약 0.01 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 60초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 124초를 경과해도 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.2 mm, a planar thickness change of about 0.5% (0.022 mm), and a uniformity of the surface showing a value of about 0.01 mm. The developing time was about 60 seconds for the developer at pH 12.0. No streaks could be observed on the surface. Even after the over developing time of 124 seconds, the shape of the pattern was stable, and the uniformity of the surface was not significantly different.

<실시예 13>Example 13

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.18 mm, 평면의 두께 변화는 약 0.46% (0.022 mm)이고, 표면의 균일성은 약 0.01 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 49초를 나타내 오히려 현상 시간이 다소 감소 되었다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 90초를 경과할 때 까지는 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.18 mm, a planar thickness change of about 0.46% (0.022 mm), and a uniformity of the surface showing a value of about 0.01 mm. The developing time was about 49 seconds for the developer of pH 12.0. No streaks could be observed on the surface. The pattern was stable until the over developing time passed 90 seconds, and the uniformity of the surface was not significantly different.

<비교예 2>Comparative Example 2

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.4 mm, 평면의 두께 변화는 약 5 % (0.24 mm)이고, 표면의 균일성은 약 0.04 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 44초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간(over develop time)이 24초를 넘게되면 형성된 패턴 자체의 크기가 변하고 표면의 균일성이 급격히 증가하여 결함이 생기기 시작했다.In the same manner, the film obtained after coating had an average thickness of 2.4 mm, a planar thickness change of about 5% (0.24 mm), and a uniformity of surface showing a value of about 0.04 mm. The developing time was about 44 seconds for the developer at pH 12.0. No streaks could be observed on the surface. When the over develop time exceeded 24 seconds, the size of the formed pattern itself changed and the uniformity of the surface rapidly increased, and defects began to occur.

<실시예 14><Example 14>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.38 mm, 평면의 두께 변화는 약0.42 % (0.024 mm)이고, 표면의 균일성은 약 0.014 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 64초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 120초를 경과할 때 까지는 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.38 mm, a planar thickness change of about 0.42% (0.024 mm), and a uniformity of surface showing a value of about 0.014 mm. The developing time was about 64 seconds for the developer at pH 12.0. No streaks could be observed on the surface. The pattern was stable until the over developing time passed 120 seconds, and the uniformity of the surface was not significantly different.

<비교예 3>Comparative Example 3

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.0 mm, 평면의 두께 변화는 약 3.75 % (0.15 mm)이고, 표면의 균일성은 약 0.035 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 22초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 14초를 넘게되면 형성된 패턴 자체의 크기가 변하고 표면의 균일성이 급격히 증가하여 결함이 생기기 시작했다.In the same manner, the film obtained after coating had an average thickness of 2.0 mm, a planar thickness change of about 3.75% (0.15 mm), and a uniformity of surface showing a value of about 0.035 mm. The developing time was about 22 seconds for the developer at pH 12.0. No streaks could be observed on the surface. When the excess developing time exceeded 14 seconds, the size of the formed pattern itself changed, and the uniformity of the surface rapidly increased, and defects began to occur.

<실시예 15><Example 15>

감광성 물질Photosensitive material

같은 방법으로 코팅 후 얻어진 필름의 평균 두께는 2.0 mm, 평면의 두께 변화는 약 0.5 % (0.02 mm)이고, 표면의 폄평성은 약 0.01 mm의 값을 나타냈다. pH 12.0의 현상액에 대하여 현상 시간이 약 46초를 나타냈다. 표면에서 줄무늬를 관찰할 수 없었다. 초과 현상 시간이 96초를 경과할 때 까지는 패턴의 형태가 안정했으며, 표면의 균일성도 큰 차이가 없었다.In the same manner, the film obtained after coating had an average thickness of 2.0 mm, a planar thickness change of about 0.5% (0.02 mm), and a flatness of the surface showing a value of about 0.01 mm. The development time was about 46 seconds for the developer at pH 12.0. No streaks could be observed on the surface. The pattern was stable until the over developing time of 96 seconds and the surface uniformity was not significantly different.

본 발명의 감광성 칼라 필터용 포토레지스트 조성물을 사용하면 패턴의 안정성을 향상시키고 패턴 표면의 균일성을 향상시킬 수 있다.Use of the photoresist composition for the photosensitive color filter of the present invention can improve the stability of the pattern and improve the uniformity of the pattern surface.

Claims (12)

포토레지스트 조성물에 있어서,In a photoresist composition, a) 아래 일반식 I로 나타내어지는 실리콘 화합물;a) a silicone compound represented by formula I below; b) 바인더 공중합체;b) binder copolymers; c) 다기능성 모노머;c) multifunctional monomers; d) 광개시제; 및d) photoinitiators; And e) 적, 녹, 청의 안료e) pigments of red, rust and blue 를 포함하는 감광성 칼라 필터용 포토레지스트 조성물:Photoresist composition for a photosensitive color filter comprising: <일반식 I><Formula I> 여기서,here, n은 0∼12까지의 정수,n is an integer from 0 to 12, R1, R2는 각각 독립적으로 수소원자 또는 탄소수가 1에서 6까지의 탄화수소 치환기를 나타낸다.R 1 and R 2 each independently represent a hydrogen atom or a hydrocarbon substituent having 1 to 6 carbon atoms. 제 1항에 있어서,The method of claim 1, 상기 바인더 공중합체는 분자량이 15,000 내지 60,000이고 다분산 지수가2.4 이하인 조성물.The binder copolymer has a molecular weight of 15,000 to 60,000 and a polydispersity index of 2.4 or less. 제 1항에 있어서,The method of claim 1, 상기 광 개시제가 카르보늄 화합물, 아지드 화합물, 유기 황 화합물, 과산화물, 트리할로메탄 화합물, 이미다졸 화합물 또는 이들의 혼합물인 조성물.Wherein said photoinitiator is a carbonium compound, an azide compound, an organic sulfur compound, a peroxide, a trihalomethane compound, an imidazole compound, or a mixture thereof. 제 1항에 있어서,The method of claim 1, 프로필렌글리콜 메틸에테르 아세테이트(PGMEA)를 용매로 포함하는 조성물.Composition comprising propylene glycol methyl ether acetate (PGMEA) as a solvent. 포토레지스트 조성물에 있어서,In a photoresist composition, a) 아래 일반식 II로 나타내어지는 실리콘 화합물;a) a silicone compound represented by formula II below; b) 바인더 공중합체;b) binder copolymers; c) 다기능성 모노머;c) multifunctional monomers; d) 광개시제; 및d) photoinitiators; And c) 적, 녹, 청의 안료c) pigments of red, rust and blue 를 포함하는 감광성 칼라 필터용 포토레지스트 조성물:Photoresist composition for a photosensitive color filter comprising: <일반식 II><Formula II> 여기서,here, n은 0∼12까지의 정수,n is an integer from 0 to 12, R1, R2는 각각 독립적으로 수소원자 또는 탄소수가 1에서 6까지의 탄화수소 치환기를 나타낸다.R 1 and R 2 each independently represent a hydrogen atom or a hydrocarbon substituent having 1 to 6 carbon atoms. 제 5항에 있어서,The method of claim 5, 상기 바인더 공중합체는 분자량이 15,000 내지 60,000이고 다분산 지수가 2.4 이하인 조성물.The binder copolymer has a molecular weight of 15,000 to 60,000 and a polydispersity index of 2.4 or less. 제 5항에 있어서,The method of claim 5, 상기 광 개시제가 카르보늄 화합물, 아지드 화합물, 유기 황 화합물, 과산화물, 트리할로메탄 화합물, 이미다졸 화합물 또는 이들의 혼합물인 조성물.Wherein said photoinitiator is a carbonium compound, an azide compound, an organic sulfur compound, a peroxide, a trihalomethane compound, an imidazole compound, or a mixture thereof. 제 5항에 있어서,The method of claim 5, 프로필렌글리콜 메틸에테르 아세테이트(PGMEA)를 용매로 포함하는 조성물.Composition comprising propylene glycol methyl ether acetate (PGMEA) as a solvent. 포토레지스트 조성물에 있어서,In a photoresist composition, a) 아래 일반식 III으로 나타내어지는 실리콘 화합물;a) a silicone compound represented by formula III below; b) 바인더 공중합체;b) binder copolymers; c) 다기능성 모노머;c) multifunctional monomers; d) 광개시제; 및d) photoinitiators; And e) 적, 녹, 청의 안료e) pigments of red, rust and blue 를 분산시켜 제조한 감광성 칼라 필터용 포토레지스트 조성물;Photoresist composition for a photosensitive color filter prepared by dispersing; <일반식 III><Formula III> 여기서 n 은 4∼7의 정수이다.N is an integer of 4-7 here. 제 9항에 있어서,The method of claim 9, 상기 바인더 공중합체는 분자량이 15,000 내지 60,000이고 다분산 지수가 2.4 이하인 조성물.The binder copolymer has a molecular weight of 15,000 to 60,000 and a polydispersity index of 2.4 or less. 제 9항에 있어서,The method of claim 9, 상기 광 개시제가 카르보늄 화합물, 아지드 화합물, 유기 황 화합물, 과산화물, 트리할로메탄 화합물, 이미다졸 화합물 또는 이들의 혼합물인 조성물.Wherein said photoinitiator is a carbonium compound, an azide compound, an organic sulfur compound, a peroxide, a trihalomethane compound, an imidazole compound, or a mixture thereof. 제 9항에 있어서,The method of claim 9, 프로필렌글리콜 메틸에테르 아세테이트(PGMEA)를 용매로 포함하는 조성물.Composition comprising propylene glycol methyl ether acetate (PGMEA) as a solvent.
KR10-1998-0033419A 1998-08-18 1998-08-18 Photoresist composition for color filter containing low molecular silicon compound and manufacturing method thereof KR100398746B1 (en)

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JPS61204008A (en) * 1985-03-06 1986-09-10 Kanebo Ltd Filter having excellent compaction resistance
JPH0667432A (en) * 1992-08-19 1994-03-11 Fujitsu Ltd Photosensitive heat resistant resin composition and multilayer wiring method
JPH0784118A (en) * 1993-09-16 1995-03-31 Toray Ind Inc Production for color filter
JPH0812760A (en) * 1994-06-28 1996-01-16 Oki Electric Ind Co Ltd Adjustment of sensitivity of photopolymer composition
JPH08134218A (en) * 1994-11-02 1996-05-28 Agency Of Ind Science & Technol Production of silylated high polymer
JPH1096810A (en) * 1996-09-25 1998-04-14 Sharp Corp Production of color filter

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JPS61204008A (en) * 1985-03-06 1986-09-10 Kanebo Ltd Filter having excellent compaction resistance
JPH0667432A (en) * 1992-08-19 1994-03-11 Fujitsu Ltd Photosensitive heat resistant resin composition and multilayer wiring method
JPH0784118A (en) * 1993-09-16 1995-03-31 Toray Ind Inc Production for color filter
JPH0812760A (en) * 1994-06-28 1996-01-16 Oki Electric Ind Co Ltd Adjustment of sensitivity of photopolymer composition
JPH08134218A (en) * 1994-11-02 1996-05-28 Agency Of Ind Science & Technol Production of silylated high polymer
JPH1096810A (en) * 1996-09-25 1998-04-14 Sharp Corp Production of color filter

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