KR100385157B1 - Method Of Treating perfluoro Compound Gas and Apparatus For Treating The Same - Google Patents

Abstract

Disclosed are a method for treating perfluorinated compound gas and an apparatus therefor, which can be treated at high efficiency using a high temperature plasma under atmospheric pressure. First, power is applied to a cathode and an anode provided in a predetermined reactor under normal pressure so as to generate plasma by arc discharge. Injecting a perfluorinated compound gas into the reactor and decomposing it by plasma. By cooling and treating the decomposed gases, the perfluorinated compound gases that cause global warming and environmental pollution are transformed into harmless components. Cathodes and anodes used in the apparatus of the present invention are tube-shaped, induce uniform plasma formation, uniformly dissipate electrode consumption, and have a long lifetime.

Description

Method of treating perfluorinated compound gas and apparatus therefor {Method Of Treating perfluoro Compound Gas and Apparatus For Treating The Same}

The present invention relates to a method for treating perfluorinated compound gas and a device therefor, and more particularly, to a method capable of easily treating a perfluorinated compound gas having a high atmospheric residence time and causing global warming with high efficiency. And an apparatus therefor.

Perfluorinated compound gases exhibit high global warming potential (GWP) due to their strong infrared absorption and long atmospheric residence time. These perfluorinated compound gases are mainly used in performing a chemical vapor deposition (CVD) process or a plasma etching process to form a thin film using a vacuum during the process for manufacturing a semiconductor device. However, since they are not consumed in the entire process, unreacted gas is often left, and in addition, there are cases where secondary gas is generated. In some cases, the source gas is discharged from the vacuum pump as it is.

The GWP and atmospheric residence time of representative perfluorinated compound gases are shown in Table 1 below. The strongest binding force among these gases, CF ₄ (CF binding energy is 112 to 116 Kcal / mol), has an atmospheric residence time of about 50000 years, which begins to decompose by an energy of 12.5 eV and more than 35 eV. It is known that complete decomposition occurs.

Global warming gas GWP (100ITH) Atmospheric retention time (year) CO ₂ One 50 to 200 CF ₄ 6500 50000 C ₃ F ₈ 7000 2600 C ₂ F ₆ 9200 10000

When these perfluorinated compounds are released into the atmosphere, they cause air pollution such as global warming and ozone layer destruction. Many countries are working to reduce emissions of perfluorinated compounds that have a significant impact on global warming, and several countries have joined the Kyoto Convention. Participating countries agreed to reduce a certain amount of perfluorinated gas by 2008-2012, and the World Semiconductor Council (WSC) declared to reduce 10% of its 1995 emissions by 2010.

Various efforts have been made to reduce the emissions of perfluorinated compounds. Conventional methods include alternative gas development, reduction of gas emissions by optimization of processes, capture / recycle methods, and gas decomposition by treatment equipment. Method and the like. In the process for manufacturing semiconductor devices, in the CVD process, the process optimization for reducing the emission and the development of alternative gas have made remarkable advances, greatly reducing the amount of emission gas, whereas the etching process has strict requirements for the influence of the process. Due to the large amount of exhaust gas is still required to develop an efficient removal method for this.

Thus, a combustion decomposition method, a catalytic decomposition method, a plasma decomposition method and the like have been developed and known as a perfluorinated compound treatment method. The combustion decomposition method decomposes a perfluorinated compound gas using a high temperature of 1200 ° C. or higher, and such a high temperature operating environment is produced by injecting hydrogen gas into a combustion state while heating the temperature of the heating element to 1000 ° C. At this time, the perfluorinated compound flows into the high temperature reactor and decomposition occurs.

However, in the case of the combustion decomposition method, secondary products such as NOx, SOx, etc. are generated in the combustion process, and there is a problem that post-treatment of these secondary products is required. In addition, there is a problem in that it is necessary to periodically replace the heating element and the power consumption to maintain a high temperature.

Catalytic decomposition is a method of passing the discharged perfluorinated compound gas through water and then introducing it into a tube filled with a catalyst heated to 300 to 800 ° C. to decompose by a catalyst in an environment of air and water. However, this catalytic decomposition method has to be preceded by the catalyst development for each gas, and has the disadvantage that the treatment for the unknown mixed gas is unclear. In addition, there is a problem that a periodic replacement of the catalyst and a solution to the problem of clogging of the pipe due to the generation of particulates in the gas pipe must be preceded.

Plasma decomposition is a method of treating perfluorinated compound gas by changing the exhaust gas into a material that can be easily treated using high and low temperature plasma. Plasma decomposition is suitable for exhaust gas treatment in the case of high temperature plasma, but has the disadvantage of large power loss due to high temperature and large size of the device. In addition, the electrode used for the generation of a conventional plasma has a problem that the end of the electrode wears out unevenly quickly as the process proceeds in the form of a round rod.

In the low temperature plasma, especially the high-frequency inductively coupled plasma treatment method, the plasma density and energy are significantly decreased as the size of the plasma reactor increases according to the processing capacity of the gas, thereby significantly reducing the throughput for the perfluorinated compound gas. there is a problem. In addition, the lifetime of the reactor is extremely short due to the etching of the reactor inner wall by the ions in the plasma. In order to reduce the etching rate of the etching reaction and increase the treatment rate of the perfluorinated compound gas, a treatment method using a decomposition accelerator such as steam, hydrogen, and oxygen at low plasma discharge power has been developed.

However, the use of decomposition accelerators raises the pressure in the semiconductor manufacturing process, and the use of hydrogen or steam decomposition promoters produces HF compounds which lead to corrosion of the semiconductor process pump. In addition, since the ionization reaction of the plasma does not proceed completely due to the short process time, it is difficult to completely process the perfluorinated compound gas.

Accordingly, the present invention has been made in view of the above-described problems and it is intended to provide a method capable of treating the gas with high efficiency by using a high temperature plasma using arc discharge in the treatment of the perfluorinated compound gas.

Another object of the present invention is to provide an apparatus for treating perfluorinated compound gas, which can be easily applied to the above-described method and in particular, has a prolonged lifetime by fabricating a cathode and an anode in a tubular shape.

1 is a process flowchart showing a method of treating perfluorinated compound gas according to an embodiment of the present invention.

2 is a process flow diagram showing an arrangement of a treatment apparatus for perfluorinated compound gas according to an embodiment of the present invention.

3 is a cross-sectional view of a reactor portion in a perfluorinated compound gas treatment apparatus according to an embodiment of the present invention.

4A to 4G illustrate various structures of a cathode and an anode that can be applied to a perfluorinated compound gas treating apparatus according to the present invention.

5 is a diagram illustrating the type of plasma generated in the reactor of the perfluorinated compound gas treatment apparatus according to the present invention.

6a to 6e are schematic diagrams illustrating the reaction mechanism of the gas to be treated when treating the perfluorinated compound gas by the device according to the present invention, Figure 6d is for the case of using a wet apparatus, Figure 6e is a dry For the case of using the device.

7A and 7B are mass spectrometry spectra for before and after plasma reaction 7a and 7b of CF ₄ gas in an apparatus according to one embodiment of the invention.

8A and 8B are mass spectrometry spectra for before and after plasma reaction 8a and 8b of C ₄ F ₈ gas in an apparatus according to one embodiment of the invention.

<Explanation of symbols for the main parts of the drawings>

10: PFC gas 50: high temperature plasma reactor

60: cooler 70: reaction gas treatment device

52: cathode 54, 56: first and second anode

In order to achieve the above object, in the present invention

Generating plasma by arc discharge by applying power to a cathode and an anode provided in a predetermined reactor under atmospheric pressure;

Injecting a perfluorinated compound gas into the reactor;

Decomposing the injected perfluorinated compound gas by the plasma;

Cooling the cracked gas; And

Processing the cooled gas, The anode is made of a first anode and a second anode, The step of generating a plasma, the voltage between 5 and 50KV between the cathode and the first anode, Applying power so that a current of 100 to 1000 mA flows; And applying a power source such that a voltage of 5 to 50 V is applied between the cathode and the second anode, and a current of 100 to 1000 A flows.

Gases containing carbon and hydrogen, such as CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , C ₅ F ₈ , and hydrogen such as CHF ₃ , CH ₂ F _2, etc. Included gases, such as NF ₃ , SF ₆ and the like, and gases containing sulfur and the like.

Another object of the present invention described above

An injection tube for injecting a perfluorinated compound gas;

A tubular high temperature plasma reactor communicating with the injection tube and configured to receive the perfluorinated compound gas and decompose it into a high temperature plasma by arc discharge;

A tubular cathode, anode, and reaction tube provided in the reactor;

A cooling device for cooling the cracked gas; And

A processing apparatus for processing a cooled gas, wherein the anode is achieved by a processing apparatus for a perfluorinated compound gas comprising a first anode for ignition and a second anode for formation of an arc discharge.

In the present invention, the perfluorinated compound exhaust gas, which is frequently used in various processes in the semiconductor industry, is treated by using a high temperature plasma by arc discharge under atmospheric pressure so that the perfluorinated compound gas can be treated at low cost.

Hereinafter, the perfluorinated compound gas treatment method according to the present invention will be described in detail. 1 is a process flowchart showing a method for treating perfluorinated compound gas according to the present invention.

First, when performing a plasma etching process, a CVD process, etc. for manufacturing a semiconductor device, if the perfluorinated compound gas (PFC gas) is discharged and has a certain flow rate, it is determined to determine the starting point of decomposition. Then, power is applied to the negative electrode and the positive electrode provided in the reactor so as to generate a high temperature plasma by arc discharge in a predetermined reactor under normal pressure. In the conventional perfluorinated compound gas treatment method using an inductively coupled plasma, the decomposition reaction is performed under reduced pressure, whereas in the present invention, the decomposition reaction is performed by generating a high temperature plasma under normal pressure.

In the normal pressure state rather than the decompression state, since the mean free path of electrons and ions is short, low energy plasma such as corona discharge and glow discharge is generated. Therefore, in order to decompose the perfluorinated compound gas having a strong bonding structure such as CF ₄ , it is effective to form a high temperature plasma by applying a DC power.

Preferably, the anode consists of first and second anodes. And generating a plasma by arc discharge applies a voltage of 5 to 50 KV between the cathode and the first anode, and applies a power to flow a current of 100 to 1000 mA and between the cathode and the second anode. Applying power to apply a voltage of 5 to 50V and flowing a current of 100 to 1000A to ignite a high voltage environment in a relatively short time so that perfluorinated compound gas is decomposed in a low voltage environment with low electrode loss. .

The perfluorinated compound gas is injected into the reactor in which the high temperature plasma is generated to allow decomposition reaction by plasma to proceed. Preferably, at least one auxiliary gas selected from the group consisting of nitrogen and oxygen is injected into the reactor. Such auxiliary gas may be injected together with the perfluorinated compound gas or by a separate path from the gas. The injected auxiliary gas assists in ionization and pushes the arc discharge ignited by the first anode toward the second anode, thereby helping to form an arc discharge with the second anode in a short time. As a result, the function of delaying the wear of the electrode due to the high voltage. Therefore, the auxiliary gas may be injected separately from the injection of the auxiliary gas with the perfluorinated compound gas, and specifically, by forming a separate auxiliary gas inlet on the cathode and injecting the auxiliary gas through the auxiliary gas, a very good effect may be obtained.

It is preferable to cause the plasma formed between the cathode and the anode to be guided in a semicircular curved shape rather than to form a straight line therebetween, because it increases the contact area with the processing gas. Nitrogen gas is injected to induce an arc discharge from the cathode to the ellipse rather than a straight line.

In addition, the perfluorinated compound gas and the auxiliary gas is preferably to form a vortex in the reactor by adjusting the injection angle during injection. When the incoming gas forms a vortex, an arc discharge is evenly generated around the electrode, and the contact time between the gas and the plasma is extended and the contact environment is uniform.

In addition, when the power is applied, it is preferable that the cathode and the cathode are continuously cooled. Specifically, for this purpose, cooling water may be supplied to the outside of the cathode and the anode. When the cooling water is supplied, the plasma may move away from the cooling water due to the thermal pitch effect. As a result, the plasma may be collected at the center of the tube and the electrode consumption may be reduced, thereby protecting the electrode.

It is also desirable to periodically rotate the cathode and anode to create an overall uniform environment and to induce the electrode to wear uniformly.

The cracked gas is discharged out of the reactor, cooled down and then treated by the widely used wet or dry method. The wet method is carried out by bubbling the exiting gas into water. Through this treatment, harmless components such as H ₂ O, O ₂ , CO _2, and the like are obtained. In the dry method, the discharged gas is passed through a solid adsorbent to be adsorbed and removed in the solid phase. Depending on the components of the adsorbent, such compounds as easy disposal such as SrF ₂ , ZnF ₂ , CuF ₂ are used.

2 is a process flow diagram for showing the arrangement of an apparatus capable of carrying out the method for treating perfluorinated compound gas according to the present invention.

First, the perfluorinated compound gases 10a, 10b, 10c discharged from various processes are preferably injected into the treatment apparatus together with nitrogen gas. If necessary, the gas is filtered by the filtration device 20, compressed by a compression device 30 such as a piston, and then stored in the cylinder 4. Having a certain amount is injected into the reactor 50 for decomposition. Of course, when such a process for compression and storage is unnecessary, the gas discharged from various processes may be directly injected into the reactor 50. The interior of the reactor 50 is controlled by the cold control system C, the plasma control system P and the flow rate control system G. The gas decomposed in the reactor 50 is cooled by the cooler 60 and treated by the reaction gas treating apparatus 70 and then discharged 80.

Figure 3 shows a cross-sectional view of the reactor portion in the perfluorinated compound gas treatment apparatus according to an embodiment of the present invention. 3 will be described in more detail the present invention.

From the figure, the reactor portion is largely composed of the perfluorinated compound gas injection tube 51, the reactor 50, and the reaction gas discharge tube 59, and the reactor 50 is largely the first reaction tube 58a, the cathode 52 ), The second reaction tube 58b, the first positive electrode 54, the third reaction tube 58c, the second positive electrode 56, the fourth reaction tube 58d and the cover 57. have. Each of the electrodes and the reaction tube are arranged on the same parallel line and the hollow tube is formed in the middle to form a hollow hollow portion, all of which are connected to each other by a predetermined means.

The cathode 52 is provided with a cooling groove 52a, a cooling groove lid 52b, and a gas injection hole 52c for injecting an auxiliary gas such as nitrogen and oxygen, and the first anode 54 formed to allow the cooling water to flow. The second anode 56 includes first and second cooling grooves 54a and 56a and first and second cooling groove lids 54b and 56b, respectively. And the outer peripheral surface of the reaction gas discharge pipe 59 is provided with a cooling tube 59a through which a cooling water for cooling the reacted gas can flow.

When a certain amount of gas is filled in the cylinder and the pressure is constant, the perfluorinated compound gas 10 is injected into the reactor 50 through the injection tube 51 by the controller, which is an inner space of the reactor including an electrode and a reaction tube. While dissolving is instantaneously decomposed by a high temperature plasma formed by the DC power applied to the cathode and the anode is discharged through the discharge pipe (59). The power source for generating a plasma uses a generator and generates a high temperature plasma under normal pressure. The injected gas is decomposed and reacted with gases such as nitrogen and oxygen in the reactor by ions generated after ionization proceeds by plasma, and is converted into a harmless gas.

The inlet tube 51 and the outlet tube 59 are preferably made of stainless steel.

Producing a cathode and an anode in a tubular shape disperses electrode consumption, so there is no problem that only one part wears out unevenly quickly, thereby extending the life and forming a plasma throughout the tube, thereby obtaining a uniform plasma treatment effect.

As a result of repeated experiments by the present inventors, plasma is easily generated when the distance between the cathode and the first anode and the distance between the first anode and the second anode are 100 mm or less and to maintain a constant gap therebetween. A reaction tube is provided. More preferably, it arrange | positions so that it may have a space | interval of 20-40 mm between each electrode. The first anode is an anode for ignition and is first ignited in a high voltage environment, and after about 7 to 8 seconds, a high temperature plasma is generated in a low voltage environment between the cathode and the second anode to decompose the gas. After about 10 seconds, the voltage applied to the first anode is lost.

Meanwhile, as shown in the drawing, the auxiliary gas inlet 52c is formed in the cathode 52 and the auxiliary gas is injected therethrough. A plurality of gas injection holes 52c may be formed at regular intervals on the tubular cathode 52. At this time, by adjusting the direction of the injection gas by rotating the electrode itself or by forming a bevel angle at a constant angle when forming the gas injection hole, when the auxiliary gas is injected to form a vortex, plasma is generated around the electrode. It is also possible to obtain the effect that the plasma ignited by the first anode is moved to the second anode in a short time.

The material for manufacturing the cathode and the anode is not particularly limited, but is preferably a plated body plated with any one of these metals on copper, gold, silver, iron, aluminum, alloys thereof, or any metal thereof. To manufacture.

The cathode and the anode are connected in communication with the tubular reaction tube, preferably they are all formed without edges. When the electrode is manufactured in a tubular shape, since the plasma generating part is wider than the conventional bar electrode, damage of the electrode due to the plasma generation is distributed throughout the electrode, thereby extending the life of the electrode. In the same vein, if possible, the formation of the sharp edges may prevent the intensive wear of the place.

4A-4G illustrate various structures of a cathode and an anode that can be applied to the device according to the invention. They can all be applied in a suitable combination to the cathode or anode, all of which are manufactured so that the part exposed to the hollow part inside the reactor is curved or possibly without edges. The electrodes shown in FIGS. 4A to 4D are all easy to be applied to the cathode since gas injection holes are formed. The electrode applicable in the present invention is not particularly limited to the structure shown in the drawings, and any electrode can be used. More preferably, the angle may be angled toward the plasma generator to provide an optimal flow path of the plasma.

The reaction tubes 58a, 58b, 58c, and 58d may be formed of heat-resistant insulators such as ceramics and quartz tubes. Particularly, when the reaction tubes are made of quartz tubes, the reaction tubes serve as a catalyst to react with the perfluorinated compound gas to form SiF. _It will form harmless by-products such as ₄ .

In addition, a cover 57 made of an insulating material is provided around the electrode and the reaction tube to prevent the discharge of the high temperature plasma by the arc discharge and to protect the surrounding environment. Such a cover is made of an insulating material such as backlight.

Gas decomposed in the reactor 50 is discharged to the discharge pipe 59 is cooled by the cooling water flowing along the outer peripheral surface of the discharge pipe. The cooled gas may then be treated by a wet device configured to dissolve in water or a dry device configured to adsorb to a solid adsorbent.

5 is a diagram illustrating the type of plasma generated in the reactor of the perfluorinated compound gas treatment apparatus shown in FIG. The plasma from the cathode 52 to the second anode 56 is guided in a semi-circular shape as indicated by the dotted line in the drawing under the influence of the injected gas so that the gas and the plasma can be sufficiently contacted, so that the decomposition efficiency is further increased.

Hereinafter, a mechanism in which the gas is decomposed by the apparatus according to the present invention will be described.

6a to 6e schematically show the reaction mechanism of the gas to be treated when treating the perfluorinated compound gas by the apparatus according to the present invention as described above.

Referring to FIG. 6A, the emitted perfluorinated compound gas is illustrated in a molecular structure. The gas shown is CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , which is for illustrative purposes and may be applied to other gases in the same manner.

Referring to FIG. 6B, when the gas as shown in FIG. 6A is introduced into the reactor and power is supplied to the cathode and the anode by control from the control device, the introduced gas is introduced into the high temperature plasma by arc discharge in the reactor. It causes decomposition reaction by to generate radicals, ions and the like.

Referring to FIG. 6C, the generated radicals, ions, and the like react with oxygen and SiO ₂ components of the reaction tube to form compounds such as F ₂ , COF ₂ , CO ₂ , and SiF ₄ as shown. That is, carbon and fluorine, which are main components of the perfluorinated compound gas, react with silicon in the reaction tube and oxygen in the air, respectively, to form a compound that is easy to process. The compounds thus formed can be easily processed by wet or dry processing equipment.

Referring to FIG. 6D, when the compound shown in FIG. 6C is treated using a wet apparatus, it is performed by bubbling the gas discharged into water. Through this treatment, the compound produced in FIG. 6C is obtained as a harmless component such as H ₂ O, O ₂ , CO _2, and the like.

Referring to FIG. 6E, the compound produced in FIG. 6C is treated by using a dry apparatus. This is to remove the gas discharged by passing through the solid adsorbent to adsorb the solid phase and is formed of a compound that is easy to dispose of, such as SrF ₂ , ZnF ₂ , CuF ₂ depending on the components of the adsorbent.

Hereinafter, the results of treating CF ₄ and C ₄ F ₈ gases by using the apparatus according to the embodiment of the present invention shown in FIGS. 2 and 3 will be described. 7A and 7B are mass spectrometry spectra for the CF ₄ gas before and after the plasma reaction 7a and 7b, and FIGS. 8A and 8B are before and after the plasma reaction 8a and 8b for the C ₄ F ₈ gas. Mass spectrometry spectra).

The reactor used for the experiment had an internal diameter of 50 mm and a length of 300 mm, the negative electrode having the structure shown in FIG. 4B, and the first and second positive electrodes having the structure shown in FIG. 4F. The cathode was 50 mm long and gas was injected at a flow rate of 3 × 50 L / min. Apply the power for 8 seconds so that the environment between the cathode and the first anode can maintain a high voltage environment of 10-25KV, 600mA, and then apply power with a time difference to maintain the environment between the cathode and the second anode 30V, 200A. do. The treatment of these gases was measured using a quadrupole mass spectrometer.

Through the drawings it can be seen that the CF ₄ , C ₄ F ₈ gas is changed to a component such as SiF ₄ , CO in the apparatus of the present invention. The resulting SiF ₄ component is a material having high solubility in water, and thus can be easily processed. Through this treatment, CF ₄ , C ₄ F ₈ gas was treated with an efficiency of 90% or more.

In addition, when NF ₃ was treated at 100 sccm at a power of 4.8 KW, the treatment efficiency was 97.6% when the flow rate of nitrogen gas was 30 sccm, and SF ₆ was 100 sccm at a power of 6.4 KW. When the nitrogen flow rate is 30 sccm when introduced, the treatment efficiency was about 78%. In other words, it can be seen that by using the apparatus of the present invention, not only carbon and fluorine compounds but also perfluorinated compounds including nitrogen and sulfur can be treated to a considerable level.

In describing the apparatus of the present invention as described above, in particular, the gas discharged from the process for manufacturing the semiconductor device is taken as an example, in which case the apparatus is particularly low pressure between the semiconductor manufacturing apparatus and the vacuum exhaust apparatus or by the vacuum exhaust apparatus. It may be easily installed in a place where the state is maintained. In addition, the device of the present invention may be easily applied to devices for manufacturing LCDs as well as devices for manufacturing semiconductor devices.

According to the method of the present invention as described above, it is harmless to decompose 90% or more of perfluorinated gas such as CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , C ₅ F ₈ , NF ₃ , SF _6, etc. It can be treated with side reactants. Through this, global warming and ozone layer destruction which are accelerated by the release of perfluorinated compound gas can be suppressed.

In addition, the device of the present invention is compact and can be attached to a pipe under normal pressure, and a plurality of plasmas are formed from the tubular cathode to the anode, and the damage of the electrode due to the plasma generation is dispersed throughout the electrode, so that the lifetime of the electrode becomes very long. do. Accordingly, high processing efficiency can be obtained with low maintenance and repair costs.

Although the present invention has been described above according to an embodiment of the present invention, it will be apparent to those skilled in the art that various modifications may be made without departing from the spirit of the present invention.

Claims (14)

Generating plasma by arc discharge by applying power to a cathode and an anode provided in a predetermined reactor under atmospheric pressure; Injecting a perfluorinated compound gas into the reactor; Decomposing the injected perfluorinated compound gas by the plasma; Cooling the cracked gas; And Processing the cooled gas; The anode consists of a first anode and a second anode, The generating of the plasma may include applying a power supply such that a voltage of 5 to 50 KV is applied between the cathode and the first anode and a current of 100 to 1000 mA flows; And A method of treating perfluorinated compound gas, comprising applying a power source such that a voltage of 5 to 50 V is applied between the cathode and the second anode and a current of 100 to 1000 A flows. The method of claim 1, wherein at least one auxiliary gas selected from the group consisting of nitrogen and oxygen is injected into the reactor together with the perfluorinated compound gas or perfluorinated compound gas, which is injected in a separate path from the perfluorinated compound gas. Method of treating compound gas. The method for treating a perfluorinated compound gas according to claim 1, wherein a vortex is formed when the perfluorinated compound gas or the auxiliary gas is injected. delete The method of claim 1, wherein the cathode and the anode are continuously cooled when the power is applied. The method for treating perfluorinated compound gas according to claim 1, wherein the cathode and the anode are rotated periodically. An injection tube for injecting a perfluorinated compound gas; A tubular high temperature plasma reactor communicating with the injection tube and configured to receive the perfluorinated compound gas and decompose it into a high temperature plasma by arc discharge; A tubular cathode, anode, and reaction tube provided in the reactor; A cooling device for cooling the cracked gas; And A processing device for processing the cooled gas, And the anode comprises a first anode for ignition and a second anode for formation of an arc discharge. 8. The apparatus of claim 7, wherein a gas inlet for introducing at least one auxiliary gas selected from the group consisting of nitrogen and oxygen is formed in the cathode. delete 8. The apparatus of claim 7, wherein the cathode and the anode are provided with cooling grooves through which cooling water can flow. The apparatus of claim 7, wherein a distance between the cathode and the anode is 100 mm or less and a reaction tube is provided therebetween. 8. The device of claim 7, wherein the cathode and the anode are tubular in communication with the tubular reaction tube and have no corners. The method according to claim 7, wherein the cathode and the anode is formed of a plated body plated with any one of these metals in copper, gold, silver, iron, aluminum, alloys thereof, or any one of these metals. Apparatus for treating perfluorinated compound gas. A method according to claim 7, which is used for the treatment of perfluorinated compound gas emitted in a CVD process and / or a plasma etching process for the manufacture of a semiconductor device or a liquid crystal display device (LCD).