KR100381394B1 - Source processing apparatus for processing the organic material under the high pressure and high temperature - Google Patents

Abstract

An object of the present invention is to provide a high temperature and high pressure organic material processing apparatus capable of ensuring gas sealing and safety while high temperature and high pressure treatment of organic materials and metals in an organic semiconductor process. The present invention relates to a high temperature and high pressure organic material processing apparatus for manufacturing an organic semiconductor device for raising a temperature by loading a source material of an organic semiconductor into a pressure vessel and heating using a heater, wherein the source material is used in a processing chamber for manufacturing an organic semiconductor. A pressure vessel for moving the; Heaters disposed in the pressure vessel at intervals in a vacuum state; A lower lower tank through which an upward flow of the source material passes from the heating operation of the heater; And an upper tank causing a passage for forming a communication state with the processing chamber in the lower region, wherein the upper tank has a velocity of a source material having an organic material and an alkali metal material evaporated from the lower tank. Down.

Description

SOURCE PROCESSING APPARATUS FOR PROCESSING THE ORGANIC MATERIAL UNDER THE HIGH PRESSURE AND HIGH TEMPERATURE}

The present invention relates to an organic semiconductor device for treating organic materials and metals in a high temperature, high pressure atmosphere. More specifically, the present invention promotes sealability and safety while heating and pressurizing the organic material and the alkali metal material sealed in the pressure vessel in the deposition apparatus of the organic semiconductor device using a lower melting point as the pressure becomes higher. It relates to an organic material processing apparatus of high temperature and high pressure for manufacturing an organic semiconductor device.

The structure of a conventional semiconductor CVD apparatus is suitable for processing a plate-like workpiece such as a silicon wiper by the use of high pressure gas in the manufacture of silicon semiconductors or UL silicon, which processes wafers one by one at a cycle time of a few minutes to form a high pressure on the source material. Do.

In addition, the deposition apparatus of the semiconductor CVD apparatus is performing deposition by heating the organic EL (Oranic Electro Luminescence) material and alkali metal, which are currently being researched and developed, to a temperature within the range of 300 ° C to 1,000 ° C. Here, when the organic material and alkali metal used for the organic EL material are heated to a temperature of 1,000 ° C. or more at the treatment temperature, the material acts fatally on the discoloration or the life of the property. Accordingly, the vapor deposition apparatus according to the high temperature of the organic EL material must use fine and complicated seal parts, and these fine seal parts, for example, a heat source such as a heater, must be sealed in the hot container during the high temperature treatment. Therefore, when a seal part in a vapor deposition apparatus raises its temperature, the stability of the seal is accompanied by its plastic deformation when the treatment is carried out for a long time, so that the seal part has to be replaced to ensure the sealing function.

In addition, the technology of the semiconductor CVD apparatus increases the possibility that a high pressure substantially equal to the internal space pressure in the processing chamber is generated by another gas pressure actuator, causing problems such as pressure leakage. This not only reduces the reliability of the device but is also undesirable in safety.

In order to solve the above-mentioned problems, an object of the present invention is to ensure sealing and safety while processing high temperature and high pressure organic materials for operation of a processing apparatus for processing organic materials and alkali metal materials under high pressure gas such as a silicon wafer. have. That is, an object of the present invention is a high temperature and high pressure for manufacturing an organic semiconductor device based on the fact that when a high pressure state is applied to a source material, there is a tendency that the source material tends to be equal even if its temperature is lowered. It is to provide an organic material processing apparatus.

1 is a view showing an embodiment of a high temperature and high pressure organic material processing apparatus for manufacturing an organic semiconductor device of the present invention.

Explanation of symbols on the main parts of the drawings

2: pressure vessel 10: upper tank

20: lower tank 11: upper heating element

21: lower heating element 22: organic material

The present invention provides the following technical means to achieve the above object.

According to one embodiment of the present invention, there is provided a heat pressurizing apparatus intended to treat high temperature and high pressure organic materials for manufacturing an organic semiconductor device in an atmosphere of high temperature and high pressure gas, wherein the source material of the organic semiconductor is loaded into a pressure vessel and In the high temperature and high pressure organic substance processing apparatus for manufacturing an organic-semiconductor device for raising a temperature by heating using a heater,

A pressure vessel for moving the source material to a processing chamber for manufacturing the organic semiconductor;

Heaters disposed in the pressure vessel at intervals in a vacuum state;

A lower lower tank through which an upward flow of the source material passes from the heating operation of the heater; And,

An upper tank causing a passage for forming a communication with the processing chamber in the lower region, wherein the upper tank slows down the source material with organic and alkali metals evaporated from the lower tank; Let's do it.

In addition, in the high temperature and high pressure organic material processing apparatus for manufacturing an organic semiconductor device for raising the temperature by loading the source material of the organic semiconductor in a pressure vessel and heating using a heater,

A pressure vessel for moving the source material to a processing chamber that maintains a vacuum during fabrication of the organic semiconductor;

Heaters disposed in the pressure vessel at intervals in a vacuum state;

A lower lower tank through which an upward flow of the source material passes from the heating operation of the heater; And,

An upper tank causing a convection passage for forming a communication condition with said processing chamber in said lower region, said upper tank having a rate of source material with organic and alkali metals evaporated from said lower tank; The process chamber maintains the temperature and pressure reduced than the temperature and pressure in the upper tank so that the controlled organic and alkali metal material flows uniformly in the upper tank.

In the structure of the high temperature autoclave for manufacturing the organic semiconductor, the lower tank causes an upward flow by heating action from the heater, and this upward flow flows into the upper tank to buffer excessive high temperature or high pressure in the lower region of the processing chamber. To form airflow. This phenomenon contributes to the heater further improving the temperature uniformity in the processing chamber.

1 shows an example of a main body of a high temperature and high pressure organic material processing apparatus for an organic semiconductor according to the present invention. These figures show in detail that the device is operated under high pressure with the high temperature and high pressure vessel 2 filled with high pressure gas.

As shown in FIG. 1, the pressure vessel 2 has an upper tank 10 positioned at an upper portion thereof, and a lower tank 20 positioned at a lower portion thereof in communication with the upper tank 10 and a neck 15. ). In addition, heaters 11 and 21 are attached to the upper tank 10 and the lower tank 20. In addition, the pressure vessel 2 is spaced in a vacuum state with the upper tank 10 and the lower tank 20 through the neck portion 15 and is connected to the processing chamber 33.

In addition, the heaters 11 and 21 are provided with an upper heating element 11 in the upper tank 10 as two heating elements, and a lower heating element 21 in the lower tank 20. In addition, the heaters 11 and 21 are divided into upper heating element 11 and lower heating element 21 regions, and the lower heating element 21 region is formed of a source material stacked on the lower tank 20. 22) The heaters 11 and 21 are resistance-heated and are attached to the pressure vessel 2 to transfer the heat supplied by the heaters 11 and 21, so that the temperature of the vessel 2 is between 100 ° C and 200 ° C at room temperature. It can be maintained in the temperature range between. For the same reason, a large amount of heat also accumulates in the upper tank 10 of the container 2. The high pressure gas introduction hole 23 and the high pressure gas discharge hole 32 are formed on the lower tank 20 and the upper tank 10 of the pressure vessel 2, respectively, in a state independent from each other. In addition, the heaters 11 and 21 can diffuse more source materials 22 as long as the arrangement thereof and the region adjusted to a constant temperature and pressure are sufficiently ensured in the vertical direction. That is, the source materials 22 are movable up and down by adjustment to the conditions of the lower tank 20 receiving them, for example the temperature and pressure already set.

The neck portion 15 connecting the lower tank 20 and the upper tank 10 has a structure in which an opening is provided, so that heat transfer by the high pressure gas can be effectively moved. Even when transfer of heat by gas movement, such as argon (Ar) gas, is used as the pressure medium, three or more members may be used in order to effectively transfer heat.

The high pressure gas supplied through the high pressure gas introduction passage 23 may intentionally adjust the gas flow in order to prevent an uneven distribution of temperature during the high speed pressurization operation. The source material 22 in the lower tank 20 is introduced into the processing space via the hole 241 passing through the baffle 24 and at a temperature of 50 ° C. to 800 ° C. when used in a high temperature and high pressure organic material processing apparatus. Can be maintained. Preferred temperatures are used at temperatures of 200 ° C to 300 ° C. In addition, the size of the hole 241 in the baffle 24 has a size of 0.1-20 mm. Preferred hole sizes are from 0.5 to 20 mm.

In addition, the high temperature and high pressure organic material processing apparatus is provided with a primary gauge 26 as a means for temperature measurement to measure gases and particles in the pressure vessel 2 when the pressure vessel 2 is under high pressure or low pressure or when it is emptied. The secondary side gauge 16 is arranged.

In addition, the heater 21 disposed in the lower tank 20 is preferably separated into a plurality of regions, so that independent heat control can be applied over the plurality of regions. That is, it is preferable to arrange the heating elements 11 and 21 as a whole for the reasons described below.

The heaters 11 and 21 of the present embodiment separate the heating element 11 on the pressure side of the upper tank 10 and the heating element 21 on the lower tank 20 side, and the plurality of temperature measuring means 16 and 26 are separated. It is arranged in such an area, and the temperature value measured in this area is continuously input to a heating power controller (not shown) to have a temperature distribution according to even heating.

The pressure vessel 2 introduces the internal high pressure gas into the lower tank 20 through the introduction passage 23. That is, the high pressure gas introduced is discharged by the discharge to the processing chamber 33 from the hot gas discharge passage 23 formed in the lower tank 20 via the upper tank 10.

In addition, the gas introduced into the pressure vessel 2 is repeatedly performed in which an inert gas such as Ar and He is supplied at a pressure of 1 Mpsi or less, preferably 20 psi to 500 psi, and discharged. In this case, the gas is introduced from the high pressure gas introduction passage 23 and discharged from the high pressure gas discharge hole 241 through the baffle 25. At this point, the heaters 11 and 21 are powered on for the heating operation.

On the other hand, the processing chamber 33 maintains the temperature and pressure reduced than the temperature and pressure in the upper tank 10 so that the controlled organic and alkali metal material flows uniformly in the upper tank 10. In addition, in the organic material processing apparatus of the high temperature and high pressure, once the processing chamber 33 proceeds to the predetermined temperature and pressure or more, the heaters 11 and 21 are turned off, and then the gas is a passage for discharging the high pressure gas. It is discharged to the processing chamber 33 along the line connected to.

In addition, even heat distribution can be achieved under normal high temperature and high pressure operation, for example, as high as 20 MPa or more, but a large amount of power must be supplied to the heaters 11 and 21 for operations requiring heating at low pressure. Sometimes. In this case, a separate temperature measuring gauge is arranged in a position close to the heater so that the temperature around the heaters 11 and 21 can be monitored.

Such a high pressure device is a high pressure device designed to be used at a temperature as high as 20 psi to 500 psi and a temperature of 50 ° C. to 500 ° C. for evaporation of organic materials, and the high pressure device has a passage for communicating with the outside. If not provided, the high-pressure device is likely to break or even explode due to pressure differences inside and outside. Therefore, the high pressure device is cased at regular vacuum intervals in the lower tank 20 and the upper tank 10 so as not to be damaged. Here, the vacuum space interval prevents the high-pressure container 2 from being blown out by automatically pumping out the leak amount by the pump 27 when a leak occurs in the lower tank 0 and the upper tank 0. Accordingly, this arrangement of the present invention increases safety while preventing breakage in the pressure vessel 2. This simple construction also ensures easy maintenance.

The above examples are illustrative and not restrictive. It is intended that the scope of the invention be defined by the claims appended hereto, and all changes or categories included within the scope of the claims to be included in the invention accordingly.

As described above, by forming the organic material processing apparatus of the high temperature and high pressure by using the melting point of the sealed source material in the deposition apparatus of the organic material and alkali metal under high pressure, the high temperature and high pressure gas can easily experience convection. A high temperature and high pressure organic material processing apparatus for manufacturing an organic semiconductor device can be obtained which obtains sealability and safety while treating a material such as ALQ ₃ at high temperature and high pressure, and which is suitable for treating the workpiece.

Claims (7)

In the high temperature and high pressure organic material processing apparatus for manufacturing an organic semiconductor device for raising the temperature by loading the source material of the organic semiconductor in a pressure vessel and heating using a heater, A pressure vessel for moving the source material to a processing chamber for manufacturing the organic semiconductor; Heaters disposed in the pressure vessel at intervals in a vacuum state; A lower lower tank through which an upward flow of the source material passes from the heating action of the heater; And, An upper tank causing a passage for forming a communication with the processing chamber in the lower region, wherein the upper tank slows down the source material with organic and alkali metals evaporated from the lower tank; High temperature and high pressure organic material processing apparatus, characterized in that. The method of claim 1, And the heater comprises a plurality of separate heating elements controlled independently of each other. The method of claim 1, The pressure vessel is provided so that the high pressure gas is directly supplied to the upper region, and the high pressure gas introduction passage for introducing the high pressure gas into the processing chamber and the high pressure gas discharge passage for discharging the high pressure gas to the outside of the processing chamber. High temperature and high pressure organic material processing apparatus comprising a. The method of claim 1, High temperature and high pressure organic material processing apparatus, characterized in that the heater in the lower tank is heated at a temperature of 50 ℃-500 ℃. The method of claim 1, The gas flowing into the pressure vessel is a high temperature and high pressure organic material processing apparatus, characterized in that maintained at a pressure of 20 psi-500 psi. The method of claim 1, The source material in the lower tank is introduced into the processing space via a hole passing through the baffle, wherein the size of the hole in the baffle is in the range of 0.5-20 mm. In the high temperature and high pressure organic material processing apparatus for manufacturing an organic semiconductor device for raising the temperature by loading the source material of the organic semiconductor in a pressure vessel and heating using a heater, A pressure vessel for moving the source material to a processing chamber that maintains a vacuum during organic semiconductor manufacturing; Heaters disposed in the pressure vessel at intervals in a vacuum state; A lower lower tank through which an upward flow of the source material passes from the heating operation of the heater; And, An upper tank causing a convection passage for forming a communication condition with said processing chamber in said lower region, said upper tank having a rate of source material with organic and alkali metals evaporated from said lower tank; And the processing chamber maintains the temperature and pressure lower than the temperature and pressure in the upper tank so that the controlled organic and alkali metals flow uniformly in the upper tank. Material handling device.